CN118040459B - Semiconductor packaging structure and packaging method - Google Patents
Semiconductor packaging structure and packaging method Download PDFInfo
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- CN118040459B CN118040459B CN202410444560.XA CN202410444560A CN118040459B CN 118040459 B CN118040459 B CN 118040459B CN 202410444560 A CN202410444560 A CN 202410444560A CN 118040459 B CN118040459 B CN 118040459B
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- heat dissipation
- conductive heat
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- heat sink
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a semiconductor packaging structure and a packaging method, wherein the semiconductor packaging structure comprises: a plurality of stacked structures, each of the stacked structures comprising: the bus bar comprises a bus bar, a first conductive heat dissipation spacer, a second conductive heat dissipation spacer and an electric insulation heat dissipation fin, wherein the electric insulation heat dissipation fin is positioned at the bottoms of the first conductive heat dissipation spacer and the bus bar and at the bottoms of part of the second conductive heat dissipation spacer, the width of the second conductive heat dissipation spacer is smaller than that of the first conductive heat dissipation spacer, the height of the first conductive heat dissipation spacer is larger than that of the bus bar and larger than that of the second conductive heat dissipation spacer, and the electric insulation heat dissipation fin is welded with the bottom surface of the first conductive heat dissipation spacer and is spaced from the bus bar and the second conductive heat dissipation spacer; the second conductive heat dissipation spacers are positioned between the first conductive heat dissipation spacers in the adjacent stacked structures; and the heat sink is welded with one side surface of the electric insulation radiating fin, which is away from the first electric conduction radiating spacer. The reliability of the semiconductor package structure is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor packaging structure and a packaging method.
Background
A semiconductor package structure includes: a bar; conductive heat dissipation spacer blocks positioned on two sides of the bar; an electrically insulating heat sink located at the bottom of the electrically conductive heat dissipating spacer; and the heat sink is welded with the conductive heat dissipation spacer.
However, the semiconductor package structure of the related art has a problem of poor reliability.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is how to improve the reliability of the semiconductor package structure, so as to provide a semiconductor package structure and a packaging method.
The invention provides a semiconductor packaging structure, comprising: a plurality of stacked structures, each of the stacked structures comprising: the bus bar comprises a bus bar, a first conductive heat dissipation spacer, a second conductive heat dissipation spacer and an electric insulation heat dissipation fin, wherein the first conductive heat dissipation spacer and the second conductive heat dissipation spacer are positioned on two sides of the bus bar in the width direction, the electric insulation heat dissipation fin is positioned at the bottoms of the first conductive heat dissipation spacer and the bus bar, the bottom of the second conductive heat dissipation spacer is partially, the width of the second conductive heat dissipation spacer is smaller than that of the first conductive heat dissipation spacer, the height of the first conductive heat dissipation spacer is larger than that of the bus bar and larger than that of the second conductive heat dissipation spacer, and the electric insulation heat dissipation fin is welded with the bottom surface of the first conductive heat dissipation spacer, connected with the bottom surface of the bus bar and spaced from the second conductive heat dissipation spacer; the second conductive heat dissipation spacers are positioned between the first conductive heat dissipation spacers in the adjacent stacked structures; and the heat sink is welded with one side surface of the electric insulation radiating fin, which is away from the first electric conduction radiating spacer.
Optionally, the width of the second conductive heat dissipation spacer is 10% -30% of the width of the first conductive heat dissipation spacer.
Optionally, the second conductive heat dissipation barrier has a width of 0.1mm to 0.3mm.
Optionally, the difference between the height of the first conductive heat dissipation barrier and the height of the bar is 0.1mm to 0.3mm.
Optionally, electrically insulating fins in different stacked configurations are spaced apart.
Optionally, a sidewall of the first electrically conductive heat spreader in the stacked configuration facing away from the bar is aligned with a sidewall of the electrically insulating heat sink on one side in the width direction.
Optionally, for adjacent stacked structures, the second conductive heat spreader in one stacked structure is welded to the first conductive heat spreader in the other stacked structure.
Optionally, the stacking structure further includes: a first solder layer between the first electrically conductive heat spreader and the electrically insulating heat sink; a second solder layer between the first conductive heat spreader and the bar; a third solder layer located between the second conductive heat spreader and the bar; a fourth solder layer located between the electrically insulating heat sink and the heat sink, the fourth solder layer having a melting point less than the melting point of the first solder layer, the second solder layer, and the third solder layer; and the fifth welding layers are positioned between the adjacent stacked structures, and the melting points of the fifth welding layers are smaller than the melting points of the first welding layer, the second welding layer and the third welding layer.
The invention also provides a packaging method, which comprises the following steps: forming a plurality of stacked structures, wherein the method for forming each stacked structure comprises the following steps: providing a bar, a first conductive heat dissipation spacer, a second conductive heat dissipation spacer, and an electrically insulating heat sink, the second conductive heat dissipation spacer having a width less than the width of the first conductive heat dissipation spacer, the first conductive heat dissipation spacer having a height greater than the height of the bar and greater than the height of the second conductive heat dissipation spacer; welding the surface of one side of the first conductive heat dissipation spacer in the height direction with the electric insulation heat dissipation sheet, wherein the electric insulation heat dissipation sheet extends out of the first conductive heat dissipation spacer in the width direction of the first conductive heat dissipation spacer; welding one side surface of the bus bar in the width direction with a first conductive heat dissipation spacer, and welding the other side surface of the bus bar in the width direction with a second conductive heat dissipation spacer, wherein the electric insulation radiating fin is positioned at the bottom of the bus bar and at the bottom of part of the second conductive heat dissipation spacer, and the electric insulation radiating fin is spaced from both the bus bar and the second conductive heat dissipation spacer; providing a heat sink, welding together a side surface of the electrically insulating heat sink of a different one of the stacked structures facing away from the first electrically conductive heat dissipation barrier, and welding together a different one of the stacked structures, with a second electrically conductive heat dissipation barrier located between the first electrically conductive heat dissipation barriers in an adjacent stacked structure.
Optionally, the surface of one side of the first conductive heat dissipation spacer in the height direction is welded with the electrically insulating heat dissipation sheet by using a first solder; welding one side surface of the bar in the width direction with the first conductive heat dissipation spacer by adopting second solder; welding the surface of the other side of the bar in the width direction with a second conductive heat dissipation spacer by adopting a third solder; welding a side surface of the electrically insulating heat sink facing away from the first electrically conductive heat spreader with the heat sink using a fourth solder having a melting point less than the melting points of the first, second, and third solders; and welding the adjacent stacked structures together by adopting fifth welding materials, wherein the melting point of the fifth welding materials is smaller than the melting point of the first welding materials, the melting point of the second welding materials and the melting point of the third welding materials.
Optionally, the method further comprises: providing a blocking object between adjacent electrically insulating heat sinks before welding together a side surface of the electrically insulating heat sink facing away from the first electrically conductive heat spreader and the heat sink; after welding together the side surface of the electrically insulating heat sink facing away from the first electrically conductive heat spreader and the heat sink, the blocker is removed.
The technical scheme of the invention has the following beneficial effects:
according to the semiconductor packaging structure provided by the technical scheme of the invention, each stacking structure has replaceability. Even if the heights of the different first conductive heat dissipation spacers are different, the lower surfaces of the electric insulation heat dissipation fins can be aligned, and the directivity of the light emitting directions of different bars is consistent; the migration path from the solder between the heat sink and the electric insulation radiating fin to the bar is far, so that the solder between the heat sink and the electric insulation radiating fin is prevented from migrating and contacting the bar in the use process of the semiconductor packaging structure, and the bar is prevented from failing. The reliability of the semiconductor package structure is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a semiconductor package structure in the related art;
Fig. 2 is a schematic structural diagram of a semiconductor package structure in the related art;
FIG. 3 is a schematic diagram of another semiconductor package structure according to the related art;
fig. 4 is a schematic structural diagram of another semiconductor package structure in the related art;
FIG. 5 is a schematic structural view of a first electrically conductive heat spreader welded to an electrically insulating heat sink;
FIG. 6 is a schematic structural view of a bar welded together with a first conductive heat sink spacer and a second conductive heat sink spacer;
FIG. 7 is a side view of FIG. 6;
FIG. 8 is a schematic diagram of a structure in which different stacked structures are soldered to a heat sink;
Fig. 9 is a schematic structural diagram of a semiconductor package structure according to an embodiment of the application.
Detailed Description
A packaging method of a semiconductor packaging structure, referring to fig. 1, includes: the first step: the conductive heat dissipation spacer 11 and the electric insulation heat dissipation sheet 12 are welded for the first time by gold soldering sheets; and a second step of: welding n bars 10 and n+1 conductive heat dissipation spacer blocks 11 into a whole by using gold-tin soldering sheets, and alternately arranging the bars 10 and the conductive heat dissipation spacer blocks 11, so that n bars 10, n+1 conductive heat dissipation spacer blocks 11 and n+1 electric insulation radiating fins 12 form a whole bar stacked array unit; and a third step of: the bar-stacked unit is soldered to the heat sink 13 by high temperature reflow using a relatively low temperature soft solder, and the electrically insulating heat sink 12 is soldered to the heat sink 13. Wherein n is an integer greater than or equal to 2.
This encapsulation method has obvious limitations: 1) Because the gold-tin solder cannot be melted down for reworking due to the characteristics of the gold-tin solder, all bars 10 and conductive heat dissipation spacer blocks 11 cannot be reworked as long as one bar 10 fails in the packaging process or the subsequent process, and the whole module fails wholly, so that the manufacturing cost is indirectly increased; 2) In the welding process, the n bars 10 and n+1 conductive heat dissipation spacers 11 in the second step are generally assembled by a fixture to ensure that the light emitting surfaces (the upper surfaces of the bars in fig. 1) of the bars 10 are flush, but the heights of the conductive heat dissipation spacers 11 are generally deviated, so that the heights of the lower surfaces of different electric insulation heat dissipation fins 12 are inconsistent, in the third step, the heights of the lower surfaces of different electric insulation heat dissipation fins 12 are inconsistent (refer to the area of a dashed line frame in fig. 2), and the lower surfaces of the electric insulation heat dissipation fins 12 serve as welding surfaces, so that the welding between the electric insulation heat dissipation fins 12 and the heat sink 13 has a blank welding risk; 3) The third step of soldering is performed with a relatively low temperature soft solder, typically indium solder, which is easily extruded during high temperature reflow soldering, and which in turn climbs and migrates, extruding up the middle of the adjacent electrically insulating heat sink 12, and which in contact with the bar 10 may cause a short circuit. The typical process is to plug the blocking material in the middle of adjacent electrically insulating fins 12 and remove the blocking material after the high temperature reflow soldering is completed. The blocking object is located right under the bar 10 during the process of taking out the blocking object, which may contact or scratch the bottom surface of the bar 10, resulting in damage to the bar 10.
Another packaging method of a semiconductor packaging structure, referring to fig. 3, includes: the first step: the two conductive heat dissipation spacer blocks 11a and one bar 10a are welded for the first time by gold-tin soldering sheets to form a sandwich structure; and a second step of: the monolithic electrically insulating heat sink 12a is soldered with the heat sink 13a with a relatively low temperature soft solder; and the welding of the n sandwich structures and the sandwich structure and the integral electrically insulating heat sink 12a by means of soft solders at relatively low temperatures.
This packaging method also has obvious limitations: 1) In the first welding process, the conductive heat dissipation spacer 11a is welded with one bar 10a, so that the alignment of the light emergent surface (the upper surface of the bar 10a in fig. 3) of the bar 10a is generally ensured, and the deviation of the heights of the conductive heat dissipation spacer 11a at two sides of the bar 10a generally causes errors in the heights of the lower surfaces of the conductive heat dissipation spacer 11a, and in the second welding process, the welding surfaces of the conductive heat dissipation spacer 11a are not a plane, so that the welding blank welding risk exists firstly, and the light emergent directivity of the bar 10a is caused to have a deflection angle (refer to fig. 4); 2) The second step is soldering with a relatively low temperature soft solder, typically indium solder. The indium solder is liable to migrate during high temperature reflow soldering and the electrically insulating heat sink 12a between the two conductive heat dissipating spacer particles 11a is liable to be squeezed out, which may cause a short circuit in contact with the bar 10 a. The general processing is to plug the blocking material between the two conductive heat dissipation spacers 11a and below the bar 10a, and take out the blocking material after the high temperature reflow soldering is completed. In the process of taking out the blocking object, the blocking object is positioned right below the bar 10a, so that the blocking object can contact or scratch the bottom surface of the bar 10a, and the bar 10a is damaged; 3) The long-term reliability of indium solder is unstable, and electromigration phenomenon exists in the use process of the packaging structure. The indium solder under the conductive heat dissipation spacer 11a is close to the lower end surface of the bar 10a, and there is a possibility that the indium solder and the bar 10a form a contact short circuit during use, which affects the long-term reliability of the package structure.
On the basis, the invention provides a semiconductor packaging structure and a packaging method, which improve the reliability.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
An embodiment of the present invention provides a packaging method, including:
Step S1: forming a plurality of stacked structures, wherein the method for forming each stacked structure comprises the following steps: providing a bar, a first conductive heat dissipation spacer, a second conductive heat dissipation spacer, and an electrically insulating heat sink, the second conductive heat dissipation spacer having a width less than the width of the first conductive heat dissipation spacer, the first conductive heat dissipation spacer having a height greater than the height of the bar and greater than the height of the second conductive heat dissipation spacer; welding the surface of one side of the first conductive heat dissipation spacer in the height direction with the electric insulation heat dissipation sheet, wherein the electric insulation heat dissipation sheet extends out of the first conductive heat dissipation spacer in the width direction of the first conductive heat dissipation spacer; welding one side surface of the bus bar in the width direction with a first conductive heat dissipation spacer, and welding the other side surface of the bus bar in the width direction with a second conductive heat dissipation spacer, wherein the electric insulation radiating fin is positioned at the bottom of the bus bar and at the bottom of part of the second conductive heat dissipation spacer, and the electric insulation radiating fin is spaced from both the bus bar and the second conductive heat dissipation spacer;
Step S2: providing a heat sink, welding together one side surface of the electrically insulating heat sink of the different stacked structures facing away from the first electrically conductive heat dissipation barrier and the heat sink, and welding together the different stacked structures; the second conductive heat dissipation spacers are located between the first conductive heat dissipation spacers in adjacent stacked structures.
In this embodiment, each stacked structure has a replaceability. Even if the heights of the different first conductive heat dissipation spacers are different, the lower surfaces of the electric insulation heat dissipation fins can be aligned, and the directivity of the light emitting directions of different bars is consistent; the migration path from the solder between the heat sink and the electric insulation radiating fin to the bar is far, so that the solder between the heat sink and the electric insulation radiating fin is prevented from migrating and contacting the bar in the use process of the semiconductor packaging structure, and the bar is prevented from failing. The reliability of the semiconductor package structure is improved.
The packaging method of the present embodiment is described below with reference to fig. 5 to 9.
Referring to fig. 5, a first conductive heat dissipation spacer 110 and an electrically insulating heat dissipation sheet 120 are provided, a surface of one side of the first conductive heat dissipation spacer 110 in a height direction is welded with the electrically insulating heat dissipation sheet 120, and the electrically insulating heat dissipation sheet 120 extends out of the first conductive heat dissipation spacer 110 in a width direction of the first conductive heat dissipation spacer 110.
The width of the first electrically conductive heat spreader 110 is less than the width of the electrically insulating heat sink 120. After the surface of one side of the first conductive heat dissipation spacer 110 in the height direction is welded to the electrically insulating heat dissipation sheet 120, the electrically insulating heat dissipation sheet 120 can be extended out of the first conductive heat dissipation spacer 110 in the width direction of the first conductive heat dissipation spacer 110.
In one embodiment, the side wall of the electrically insulating heat sink 120 on one side in the width direction is aligned with the side wall of the first electrically conductive heat sink spacer 110 on one side in the width direction, and the side wall of the electrically insulating heat sink 120 on the other side in the width direction extends out of the first electrically conductive heat sink spacer 110 in the width direction of the first electrically conductive heat sink spacer 110.
The material of the first conductive heat dissipation barrier 110 includes any one of tungsten copper, and diamond copper. The material of the electrically insulating fin 120 includes any one of aluminum nitride, silicon carbide, beryllium oxide, and diamond.
Specifically, the surface of the first conductive heat dissipation spacer 110 on one side in the height direction is soldered with the electrically insulating heat sink 120 using a first solder. The material of the first solder comprises a gold-tin alloy. After the surface of the first conductive heatsink spacer 110 on one side in the height direction is soldered with the electrically insulating heatsink 120 using the first solder, the first solder forms a first solder layer between the first conductive heatsink spacer 110 and the electrically insulating heatsink 120.
Referring to fig. 6 and 7, fig. 6 is a schematic view based on fig. 5, fig. 7 is a side view of fig. 6, a bar 100 and a second conductive heat dissipation spacer 111 are provided, one side surface of the bar 100 in the width direction is welded with the first conductive heat dissipation spacer 110, the other side surface of the bar 100 in the width direction is welded with the second conductive heat dissipation spacer 111, the electrically insulating heat dissipation sheet 120 is located at the bottom of the bar 100 and a part of the bottom of the second conductive heat dissipation spacer 111, and the electrically insulating heat dissipation sheet 120 is spaced apart from both the bar 100 and the second conductive heat dissipation spacer 111.
The material of the second conductive heat dissipation barrier 111 includes any one of tungsten copper, and diamond copper.
Specifically, the bar 100 is welded with the first conductive heat dissipation spacer 110 on one side surface in the width direction by using the second solder; the other side surface of the bar 100 in the width direction is soldered with the second conductive heat dissipation spacer 111 using a third solder. The material of the second solder comprises a gold-tin alloy. The material of the third solder comprises a gold-tin alloy.
After one side surface of the bar 100 in the width direction is soldered with the first conductive heat dissipation spacer 110 using the second solder, the second solder forms a second solder layer between the bar 100 and the first conductive heat dissipation spacer 110. After the other side surface of the bar 100 in the width direction is soldered with the second conductive heat dissipation spacer 111 using the third solder, the third solder forms a third solder layer between the bar 100 and the second conductive heat dissipation spacer 111.
The order of the step of welding the surface of one side of the bar 100 in the width direction to the first conductive heat dissipation spacer 110, the step of welding the surface of the other side of the bar 100 in the width direction to the second conductive heat dissipation spacer 111, and the step of welding the surface of one side of the first conductive heat dissipation spacer 110 in the height direction to the electrically insulating heat dissipation sheet 120 may be adjusted, without limitation.
The width of the second conductive heat dissipation spacer 111 is smaller than the width of the first conductive heat dissipation spacer 110.
In one embodiment, the width of the second conductive heatsink spacer 111 is 10% -30%, such as 10%, 15%, 20%, 25% or 30%, of the width of the first conductive heatsink spacer 110. If the width of the second conductive heat dissipation barrier 111 is greater than 30% of the width of the first conductive heat dissipation barrier 110, the heat dissipation of the bar is affected; if the width of the second conductive heat dissipation spacer 111 is less than 10% of the width of the first conductive heat dissipation spacer 110, the flatness of the second conductive heat dissipation spacer 111 after processing is poor, which affects welding.
In the case where the width of the bar 100 is constant, the wider the first conductive heat dissipation barrier 110, the better the heat dissipation. The second conductive heat dissipation barrier 111 is limited by the material processing, and the width of the second conductive heat dissipation barrier 111 is greater than or equal to 0.1mm.
In one embodiment, the width of the second conductive heat spreader 111 is 0.1mm to 0.3mm, such as 0.1mm, 0.2mm, or 0.3mm.
The first conductive heat sink spacer 110 has a height greater than the height of the bar 100 and greater than the height of the second conductive heat sink spacer 111. In one embodiment, the difference between the height of the first conductive heat spreader 110 and the height of the bar 100 is 0.1mm to 0.3mm, for example 0.2mm. In one embodiment, the difference between the height of the first conductive heat dissipation spacer 110 and the height of the second conductive heat dissipation spacer 111 is 0.05mm to 0.3mm, such as 0.05mm, 0.1mm, 0.2mm, or 0.3mm.
In one embodiment, the distance between the electrically insulating fin 120 and the bar 100 is 0.1mm to 0.3mm, for example 0.1mm, 0.2mm or 0.3mm.
In one embodiment, the distance between the electrically insulating heat sink 120 and the second electrically conductive heat sink spacer 111 is 0.1mm to 0.3mm, such as 0.1mm, 0.2mm, or 0.3mm.
The height of the bar 100 is substantially identical to the height of the second conductive heat sink barrier 111, and in one embodiment the height of the bar 100 is the same as the height of the second conductive heat sink barrier 111.
In one embodiment, the light exit face of the bar 100, the side surface of the first electrically conductive heat sink spacer 110 facing away from the electrically insulating heat sink 120, and the side surface of the second electrically conductive heat sink spacer 111 facing away from the electrically insulating heat sink 120 are at the same height. The surface of the bar 100 on the side facing away from the electrically insulating heat sink 120 serves as the light exit surface. The light exit surface of the bar 100 refers to the surface of the bar 100 facing away from the electrically insulating heat sink 120. The rear face of the bar 100 faces the electrically insulating heat sink 120 and the front face of the bar 100 faces away from the electrically insulating heat sink 120. The arrangement direction of the rear cavity surface and the front cavity surface is perpendicular to the arrangement direction between the adjacent stacking structures.
In one embodiment, the bar 100 comprises an edge emitting semiconductor laser.
The electrically insulating heat sink 120 is welded to the first electrically conductive heat sink spacer 110, the electrically insulating heat sink 120 is further located at the bottom of the bar 100 and at the bottom of a portion of the second electrically conductive heat sink spacer 111, and the electrically insulating heat sink 120 is spaced from both the bar 100 and the second electrically conductive heat sink spacer 111. The electrically insulating heat sink 120 is spaced from the second electrically conductive heat dissipating spacer 111, reducing the risk of solder between the electrically insulating heat sink 120 and the heat sink contacting the second electrically conductive heat dissipating spacer 111. The electrically insulating heat sink 120 is spaced from the bar 100, reducing the risk of solder between the electrically insulating heat sink 120 and the heat sink contacting the bar 100.
The width of the electrically insulating heat sink 120 is greater than the sum of the width of the first electrically conductive heat sink spacer 110 and the width of the bar 100, and the width of the electrically insulating heat sink 120 is less than the sum of the width of the first electrically conductive heat sink spacer 110, the width of the second electrically conductive heat sink spacer 111 and the width of the bar 100.
The overall structure of one bar 100, one second electrically conductive heat spreader 111, one first electrically conductive heat spreader 110 and one electrically insulating heat sink 120 welded together is referred to as a stacked structure.
In one embodiment, the side wall of the first electrically conductive heat spreader 110 on the side facing away from the bar 100 in the stacked configuration is aligned with the side wall of the electrically insulating heat sink 120 on the side in the width direction.
Referring to fig. 8, a heat sink 130 is provided, a side surface of the electrically insulating heat sink 120 facing away from the first electrically conductive heat dissipation barrier 110 of a different stacked structure is welded to the heat sink 130, and a second electrically conductive heat dissipation barrier 111 is positioned between the first electrically conductive heat dissipation barriers 110 in an adjacent stacked structure.
After the electrically insulating heat sink 120 is soldered to the heat sink 130 with a fourth solder on a side surface of the electrically insulating heat sink 120 facing away from the first electrically conductive heat spreader 110, the fourth solder forms a fourth solder layer between the electrically insulating heat sink 120 and the heat sink 130. And the melting points of the fourth welding layer are smaller than the melting points of the first welding layer, the second welding layer and the third welding layer. The material of the fourth solder includes indium. The melting point of the fourth solder is smaller than the melting point of the first solder, the melting point of the second solder and the melting point of the third solder.
Specifically, the adjacent stacked structures are soldered together using a fifth solder. After the adjacent stacked structures are soldered together with the fifth solder, the fifth solder forms a fifth solder layer between the adjacent stacked structures. The melting point of the fifth welding layer is smaller than the melting point of the first welding layer, the melting point of the second welding layer and the melting point of the third welding layer. The material of the fifth solder includes indium. The melting point of the fifth solder is smaller than the melting point of the first solder, the melting point of the second solder and the melting point of the third solder.
In one embodiment, adjacent stacked structures are welded together during welding of the side surface of the electrically-insulating heat sink 120 facing away from the first electrically-conductive heat spreader 110 and the heat sink 130 of the different stacked structures.
The second conductive heat dissipation spacer 111 is welded to the bar 100 at one side wall in the width direction, and the second conductive heat dissipation spacer 111 is in direct contact with the first conductive heat dissipation spacer 110 at the other side wall in the width direction. The different electrically insulating fins 120 are spaced apart.
The process of soldering the side surface of the electrically insulating heat spreader 120 facing away from the first electrically conductive heat spreader 110 to the heat sink 130 includes a reflow soldering process.
The packaging method further comprises the following steps: providing a blocking object between adjacent electrically insulating heat sinks 120 before welding together a side surface of the electrically insulating heat sink 120 facing away from the first electrically conductive heat spreader 110 and the heat sink 130; after welding the side surface of the electrically insulating heat sink 120 facing away from the first electrically conductive heat spreader 110 to the heat sink 130, the blocker is removed. The material of the blocking object is stainless steel, aluminum oxide or aluminum nitride.
Because the blocking material is located under the second conductive heat dissipation barrier 111, the blocking material is not located directly under the bar 100, and thus the bar 100 is not damaged during the process of taking out the blocking material.
This method ensures that the lower surfaces of all the electrically insulating fins 120 are aligned and that all the electrically insulating fins 120 are in close contact with the upper surface of the heat sink 130 by the fourth solder layer, thereby ensuring effective heat dissipation between the interfaces during operation of the bar 100.
If a single stack is damaged, the single stack may be replaced. Specifically, after the side surface of the electrically insulating heat spreader 120 facing away from the first electrically conductive heat spreader 110 is welded to the heat sink 130, a heat treatment is performed, where the temperature of the heat treatment is higher than the melting point of the fourth welding layer and the melting point of the fifth welding layer and lower than the melting point of the first welding layer, the second welding layer and the third welding layer, respectively, so that the stacked structure to be replaced is removed from the heat sink 130, and then a new stacked structure is welded to the heat sink 130 without affecting other stacked structures.
In this embodiment, referring to fig. 9, even if the heights of the different first conductive heat dissipation spacers 110 are different, the alignment of the lower surfaces of the electrically insulating heat dissipation fins 120 and the uniformity of the directivity of the light emitting directions of the different bars 100 can be ensured.
The bar 100 comprises: a semiconductor substrate layer; a first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer, which are sequentially stacked, on one side of the semiconductor substrate; the front electrode is positioned on one side of the second limiting layer, which is away from the active layer; and the back electrode is positioned on one side of the semiconductor substrate away from the active layer. The arrangement direction of the first confinement layer, the first waveguide layer, the active layer, the second waveguide layer, and the second confinement layer is parallel to the width direction of the bar 100. The bar 100 is disposed behind the first and second conductive heat dissipation spacers 110 and 111, and the arrangement direction of the first confinement layer, the first waveguide layer, the active layer, the second waveguide layer, and the second confinement layer is parallel to the arrangement direction of the first and second conductive heat dissipation spacers 110 and 111.
The distance from the light emitting strip of the bar 100 to the first conductive heat sink barrier 110 is greater than the distance from the light emitting strip of the bar 100 to the second conductive heat sink barrier 111. Therefore, the heat dissipation of the bar 100 is mainly performed by the first conductive heat dissipation spacer 110, and the heat dissipation of the bar 100 is facilitated because the width of the first conductive heat dissipation spacer 110 is larger than that of the second conductive heat dissipation spacer 111.
The electrically insulating heat sink 120 is located at the bottoms of the first electrically conductive heat spreader 110 and the bar 100, and at the bottoms of a portion of the second electrically conductive heat spreader 111, so that the material migration of the fourth solder layer is far away from the path of the bar, and the bar failure caused by the migration of the fourth solder layer into contact with the bar during the use process of the device is avoided.
Another embodiment of the present invention further provides a semiconductor package structure, referring to fig. 8 and 9, including: a plurality of stacked structures, each of the stacked structures comprising: the bus bar 100, first and second conductive heat dissipation spacers 110 and 111 positioned at both sides of the bus bar 100 in the width direction, and an electrically insulating heat dissipation sheet 120, wherein the electrically insulating heat dissipation sheet 120 is positioned at the bottoms of the first and second conductive heat dissipation spacers 110 and 100 and at the bottoms of a part of the second conductive heat dissipation spacers 111, the width of the second conductive heat dissipation spacer 111 is smaller than the width of the first conductive heat dissipation spacer 110, the height of the first conductive heat dissipation spacer 110 is greater than the height of the bus bar 100 and greater than the height of the second conductive heat dissipation spacer 111, and the electrically insulating heat dissipation sheet 120 is welded with the bottom surface of the first conductive heat dissipation spacer 110 and is spaced from both the bus bar 100 and the second conductive heat dissipation spacer 111; the second conductive heat dissipation spacers 111 are located between the first conductive heat dissipation spacers 110 in adjacent stacked structures; and a heat sink 130, wherein the heat sink 130 is welded with a surface of one side of the electrically insulating heat sink 120 facing away from the first conductive heat dissipation spacer 110.
The width of the first electrically conductive heat spreader 110 is less than the width of the electrically insulating heat sink 120.
The material of the first conductive heat dissipation barrier 110 includes any one of tungsten copper, and diamond copper.
The electrically insulating heat sink 120 includes an electrically insulating main heat sink and conductive films on both side surfaces of the electrically insulating main heat sink in the thickness direction. The material of the electric insulation main radiating fin is an insulating material, and the material of the electric insulation main radiating fin comprises any one of aluminum nitride, silicon carbide, beryllium oxide and diamond. The material of the conductive film is a multilayer structure. In one embodiment, the conductive film includes a laminated intermediate layer and a gold layer, the outermost layer of the conductive film being the gold layer, the gold layer being located on a side surface of the intermediate layer facing away from the electrically insulating primary heat sink. The intermediate layer comprises a titanium layer, a nickel layer and a platinum layer which are laminated, and the titanium layer, the nickel layer and the platinum layer can be randomly arranged in the lamination direction.
The conductive film is not provided on the sidewall surface of the electrically insulating heat sink 120. The electrically insulating heat sink 120 is provided with a conductive film toward one side surface of the first electrically conductive heat sink spacer 110, so that the soldering effect is better when the electrically insulating heat sink 120 is soldered with the first electrically conductive heat sink spacer 110. The electrically insulating heat sink 120 is provided with a conductive film on a side surface facing the heat sink, so that the welding effect is better when the electrically insulating heat sink 120 is welded with the heat sink.
After the electrically insulating heat sink 120 is welded to the first electrically conductive heat sink spacer 110, the thickness direction of the electrically insulating heat sink 120 is parallel to the height direction of the first electrically conductive heat sink spacer 110.
The material of the second conductive heat dissipation barrier 111 includes any one of tungsten copper, and diamond copper.
The width of the second conductive heat dissipation spacer 111 is smaller than the width of the first conductive heat dissipation spacer 110. In one embodiment, the width of the second conductive heatsink spacer 111 is 10% -30%, such as 10%, 15%, 20%, 25% or 30%, of the width of the first conductive heatsink spacer 110. If the width of the second conductive heat dissipation barrier 111 is greater than 30% of the width of the first conductive heat dissipation barrier 110, the heat dissipation of the bar is affected; if the width of the second conductive heat dissipation spacer 111 is less than 10% of the width of the first conductive heat dissipation spacer 110, the flatness of the second conductive heat dissipation spacer 111 after processing is poor, which affects welding.
In one embodiment, the width of the second conductive heat spreader 111 is 0.1mm to 0.3mm, such as 0.1mm, 0.2mm, or 0.3mm.
The first conductive heat sink spacer 110 has a height greater than the height of the bar 100 and greater than the height of the second conductive heat sink spacer 111. In one embodiment, the difference between the height of the first conductive heat spreader 110 and the height of the bar 100 is 0.1mm to 0.3mm, for example 0.2mm. In one embodiment, the difference between the height of the first conductive heat dissipation spacer 110 and the height of the second conductive heat dissipation spacer 111 is 0.05mm to 0.3mm, such as 0.05mm, 0.1mm, 0.2mm, or 0.3mm.
In one embodiment, the distance between the electrically insulating fin 120 and the bar 100 is 0.1mm to 0.3mm, for example 0.1mm, 0.2mm or 0.3mm. If the distance between the electrically insulating heat sink 120 and the bar 100 is less than 0.1mm, when the bar 100 is welded to the second electrically conductive heat sink spacer 111 and the first electrically conductive heat sink spacer 110, respectively, the solder on both sides of the bar 100 in the width direction is easy to extrude, and the extruded solder is easy to contact with the surface of the side of the electrically insulating heat sink 120 facing away from the bar 100, and if the extruded solder of the bar 100 and the second electrically conductive heat sink spacer 111 contacts the electrically conductive film on the upper surface of the electrically insulating main heat sink, the two sides of the bar will be short-circuited. If the distance between the electrically insulating heat sink 120 and the bar 100 is greater than 0.3mm, the bar 100 is too far from the electrically insulating heat sink 120, affecting heat dissipation.
In one embodiment, the distance between the electrically insulating heat sink 120 and the second electrically conductive heat sink spacer 111 is 0.1mm to 0.3mm, such as 0.1mm, 0.2mm, or 0.3mm.
The height of the bar 100 is substantially identical to the height of the second conductive heat sink barrier 111, and in one embodiment the height of the bar 100 is the same as the height of the second conductive heat sink barrier 111.
In one embodiment, the light exit face of the bar 100, the side surface of the first electrically conductive heat sink spacer 110 facing away from the electrically insulating heat sink 120, and the side surface of the second electrically conductive heat sink spacer 111 facing away from the electrically insulating heat sink 120 are at the same height. The surface of the bar 100 on the side facing away from the electrically insulating heat sink 120 serves as the light exit surface. The light exit surface of the bar 100 refers to the surface of the bar 100 facing away from the electrically insulating heat sink 120. The rear face of the bar 100 faces the electrically insulating heat sink 120 and the front face of the bar 100 faces away from the electrically insulating heat sink 120. The arrangement direction of the rear cavity surface and the front cavity surface is perpendicular to the arrangement direction between the adjacent stacking structures.
In one embodiment, the bar 100 comprises an edge emitting semiconductor laser.
The electrically insulating heat sink 120 is welded to the first electrically conductive heat sink spacer 110, the electrically insulating heat sink 120 is further located at the bottom of the bar 100 and at the bottom of a portion of the second electrically conductive heat sink spacer 111, and the electrically insulating heat sink 120 is spaced from both the bar 100 and the second electrically conductive heat sink spacer 111. The electrically insulating heat sink 120 is spaced from the second electrically conductive heat dissipating spacer 111, reducing the risk of solder between the electrically insulating heat sink 120 and the heat sink contacting the second electrically conductive heat dissipating spacer 111. The electrically insulating heat sink 120 is spaced from the bar 100, reducing the risk of solder between the electrically insulating heat sink 120 and the heat sink contacting the bar 100.
The width of the electrically insulating heat sink 120 is greater than the sum of the width of the first electrically conductive heat sink spacer 110 and the width of the bar 100, and the width of the electrically insulating heat sink 120 is less than the sum of the width of the first electrically conductive heat sink spacer 110, the width of the second electrically conductive heat sink spacer 111 and the width of the bar 100.
The overall structure of one bar 100, one second electrically conductive heat spreader 111, one first electrically conductive heat spreader 110 and one electrically insulating heat sink 120 welded together is referred to as a stacked structure.
For adjacent stacks, the second conductive heat spreader 111 in one stack is solder-connected to the first conductive heat spreader 110 in the other stack.
The length of the first conductive heat spreader 110 is greater than or equal to the length of the bar 100. The length direction of the first conductive heat dissipation spacer 110 is parallel to the length direction of the bar 100, the width direction of the first conductive heat dissipation spacer 110 is parallel to the width direction of the bar 100, and the height direction of the first conductive heat dissipation spacer 110 is parallel to the height direction of the bar 100.
The length of the second conductive heat dissipation barrier 111 is greater than or equal to the length of the bar 100. The length direction of the second conductive heat dissipation spacer 111 is parallel to the length direction of the bar 100, the width direction of the second conductive heat dissipation spacer 111 is parallel to the width direction of the bar 100, and the height direction of the second conductive heat dissipation spacer 111 is parallel to the height direction of the bar 100.
In one embodiment, the electrically insulating fins 120 in the different stacked configurations are spaced apart.
In one embodiment, the side wall of the first electrically conductive heat spreader 110 on the side facing away from the bar 100 in the stacked configuration is aligned with the side wall of the electrically insulating heat sink 120 on the side in the width direction.
In one embodiment, the stacked structure further comprises: a first solder layer between the first electrically conductive heat spreader 110 and the electrically insulating heat spreader 120; a second solder layer between the first conductive heat spreader 110 and the bar 100; a third solder layer between the second conductive heat spreader 111 and the bar 100; a fourth solder layer located between the electrically insulating heat sink 120 and the heat sink 130, the fourth solder layer having a melting point less than the melting point of the first solder layer, the second solder layer, and the third solder layer; and the fifth welding layers are positioned between the adjacent stacked structures, and the melting points of the fifth welding layers are smaller than the melting points of the first welding layer, the second welding layer and the third welding layer.
The material of the first welding layer comprises any one of gold-tin alloy, tin-lead alloy and tin-silver-copper alloy. The material of the second welding layer comprises any one of gold-tin alloy, tin-lead alloy and tin-silver-copper alloy. The material of the third welding layer comprises any one of gold-tin alloy, tin-lead alloy and tin-silver-copper alloy. The material of the fourth soldering layer includes any one of indium, indium tin, indium silver, tin silver copper and tin. The material of the fifth soldering layer includes any one of indium, indium tin, indium silver, tin silver copper, and tin.
The bar 100 comprises: a semiconductor substrate layer; a first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer, which are sequentially stacked, on one side of the semiconductor substrate; the front electrode is positioned on one side of the second limiting layer, which is away from the active layer; and the back electrode is positioned on one side of the semiconductor substrate away from the active layer. The arrangement direction of the first confinement layer, the first waveguide layer, the active layer, the second waveguide layer, and the second confinement layer is parallel to the width direction of the bar 100. The arrangement direction of the first confinement layer, the first waveguide layer, the active layer, the second waveguide layer, and the second confinement layer is parallel to the arrangement direction of the first conductive heat dissipation spacer 110 and the second conductive heat dissipation spacer 111.
The distance from the light emitting strip of the bar 100 to the first conductive heat sink barrier 110 is greater than the distance from the light emitting strip of the bar 100 to the second conductive heat sink barrier 111. Therefore, the heat dissipation of the bar 100 is mainly performed by the first conductive heat dissipation spacer 110, and the heat dissipation of the bar 100 is facilitated because the width of the first conductive heat dissipation spacer 110 is larger than that of the second conductive heat dissipation spacer 111.
The electrically insulating heat sink 120 is located at the bottoms of the first electrically conductive heat spreader 110 and the bar 100, and at the bottoms of a portion of the second electrically conductive heat spreader 111, so that the material migration of the fourth solder layer is far away from the path of the bar, and the bar failure caused by the migration of the fourth solder layer into contact with the bar during the use process of the device is avoided.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (11)
1. A semiconductor package structure, comprising:
A plurality of stacked structures, each of the stacked structures comprising: the bus bar comprises a bus bar, a first conductive heat dissipation spacer, a second conductive heat dissipation spacer and an electric insulation heat dissipation fin, wherein the first conductive heat dissipation spacer and the second conductive heat dissipation spacer are positioned on two sides of the bus bar in the width direction, the electric insulation heat dissipation fin is positioned at the bottoms of the first conductive heat dissipation spacer and the bus bar, the bottom of the second conductive heat dissipation spacer is partially, the width of the second conductive heat dissipation spacer is smaller than that of the first conductive heat dissipation spacer, the height of the first conductive heat dissipation spacer is larger than that of the bus bar and larger than that of the second conductive heat dissipation spacer, and the electric insulation heat dissipation fin is welded with the bottom surface of the first conductive heat dissipation spacer, connected with the bottom surface of the bus bar and spaced from the second conductive heat dissipation spacer; the second conductive heat dissipation spacers are positioned between the first conductive heat dissipation spacers in the adjacent stacked structures;
and the heat sink is welded with one side surface of the electric insulation radiating fin, which is away from the first electric conduction radiating spacer.
2. The semiconductor package according to claim 1, wherein the width of the second conductive heat spreader is 10% -30% of the width of the first conductive heat spreader.
3. The semiconductor package according to claim 1, wherein the second conductive heat spreader has a width of 0.1mm to 0.3mm.
4. The semiconductor package according to claim 1, wherein a difference between a height of the first conductive heat spreader and a height of the bar is 0.1mm to 0.3mm.
5. The semiconductor package according to claim 1, wherein the electrically insulating heat sinks in different stacks are spaced apart.
6. The semiconductor package according to claim 1, wherein a sidewall of the first conductive heat spreader on a side facing away from the bar in the stacked structure is aligned with a sidewall of the electrically insulating heat sink on a side in a width direction.
7. The semiconductor package according to claim 1, wherein for adjacent stacked structures, the second conductive heat spreader in one stacked structure is solder-connected with the first conductive heat spreader in another stacked structure.
8. The semiconductor package according to claim 1, wherein the stacked structure further comprises: a first solder layer between the first electrically conductive heat spreader and the electrically insulating heat sink; a second solder layer between the first conductive heat spreader and the bar; a third solder layer located between the second conductive heat spreader and the bar; a fourth solder layer located between the electrically insulating heat sink and the heat sink, the fourth solder layer having a melting point less than the melting point of the first solder layer, the second solder layer, and the third solder layer; and the fifth welding layers are positioned between the adjacent stacked structures, and the melting points of the fifth welding layers are smaller than the melting points of the first welding layer, the second welding layer and the third welding layer.
9. A method of packaging, comprising:
Forming a plurality of stacked structures, wherein the method for forming each stacked structure comprises the following steps: providing a bar, a first conductive heat dissipation spacer, a second conductive heat dissipation spacer, and an electrically insulating heat sink, the second conductive heat dissipation spacer having a width less than the width of the first conductive heat dissipation spacer, the first conductive heat dissipation spacer having a height greater than the height of the bar and greater than the height of the second conductive heat dissipation spacer; welding the surface of one side of the first conductive heat dissipation spacer in the height direction with the electric insulation heat dissipation sheet, wherein the electric insulation heat dissipation sheet extends out of the first conductive heat dissipation spacer in the width direction of the first conductive heat dissipation spacer; welding one side surface of the bus bar in the width direction with a first conductive heat dissipation spacer, and welding the other side surface of the bus bar in the width direction with a second conductive heat dissipation spacer, wherein the electric insulation radiating fin is positioned at the bottom of the bus bar and at the bottom of part of the second conductive heat dissipation spacer, and the electric insulation radiating fin is spaced from both the bus bar and the second conductive heat dissipation spacer;
Providing a heat sink, welding together a side surface of the electrically insulating heat sink of a different one of the stacked structures facing away from the first electrically conductive heat dissipation barrier, and welding together a different one of the stacked structures, with a second electrically conductive heat dissipation barrier located between the first electrically conductive heat dissipation barriers in an adjacent stacked structure.
10. The packaging method according to claim 9, wherein a surface of one side in a height direction of the first conductive heat dissipation spacer is soldered with the electrically insulating heat dissipation sheet using a first solder; welding one side surface of the bar in the width direction with the first conductive heat dissipation spacer by adopting second solder; welding the surface of the other side of the bar in the width direction with a second conductive heat dissipation spacer by adopting a third solder; welding a side surface of the electrically insulating heat sink facing away from the first electrically conductive heat spreader with the heat sink using a fourth solder having a melting point less than the melting points of the first, second, and third solders; and welding the adjacent stacked structures together by adopting fifth welding materials, wherein the melting point of the fifth welding materials is smaller than the melting point of the first welding materials, the melting point of the second welding materials and the melting point of the third welding materials.
11. The packaging method of claim 9, further comprising: providing a blocking object between adjacent electrically insulating heat sinks before welding together a side surface of the electrically insulating heat sink facing away from the first electrically conductive heat spreader and the heat sink; after welding together the side surface of the electrically insulating heat sink facing away from the first electrically conductive heat spreader and the heat sink, the blocker is removed.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103746287A (en) * | 2014-01-10 | 2014-04-23 | 中国科学院苏州生物医学工程技术研究所 | Packaging structure applied to long-pulse-width and high-power semiconductor laser |
| JP2017028044A (en) * | 2015-07-21 | 2017-02-02 | 浜松ホトニクス株式会社 | Semiconductor laser device and method for manufacturing semiconductor laser device |
| CN217607193U (en) * | 2022-06-24 | 2022-10-18 | 西安镭特电子科技有限公司 | Laser bar array packaging structure |
| CN220492415U (en) * | 2023-06-29 | 2024-02-13 | 西安炬光科技股份有限公司 | A laser module and laser |
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| US6636538B1 (en) * | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746287A (en) * | 2014-01-10 | 2014-04-23 | 中国科学院苏州生物医学工程技术研究所 | Packaging structure applied to long-pulse-width and high-power semiconductor laser |
| JP2017028044A (en) * | 2015-07-21 | 2017-02-02 | 浜松ホトニクス株式会社 | Semiconductor laser device and method for manufacturing semiconductor laser device |
| CN217607193U (en) * | 2022-06-24 | 2022-10-18 | 西安镭特电子科技有限公司 | Laser bar array packaging structure |
| CN220492415U (en) * | 2023-06-29 | 2024-02-13 | 西安炬光科技股份有限公司 | A laser module and laser |
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