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JP3639497B2 - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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Publication number
JP3639497B2
JP3639497B2 JP2000098770A JP2000098770A JP3639497B2 JP 3639497 B2 JP3639497 B2 JP 3639497B2 JP 2000098770 A JP2000098770 A JP 2000098770A JP 2000098770 A JP2000098770 A JP 2000098770A JP 3639497 B2 JP3639497 B2 JP 3639497B2
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JP
Japan
Prior art keywords
submount
semiconductor laser
common electrode
light emitting
laser light
Prior art date
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Expired - Fee Related
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JP2000098770A
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Japanese (ja)
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JP2001284731A (en
Inventor
靖之 別所
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Sanyo Electric Co Ltd
Original Assignee
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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Priority to JP2000098770A priority Critical patent/JP3639497B2/en
Publication of JP2001284731A publication Critical patent/JP2001284731A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Semiconductor Lasers (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は半導体レーザ装置に関する。
【０００２】
【従来の技術】
複数のレ−ザ発光部を一体に備えるモノリシックタイプの半導体レーザ素子をステム上にサブマウントを介して装着した半導体レーザ装置は、半導体レーザ素子の放熱特性を向上させるために、発光領域（活性層）が下に位置するジャンクションダウンの形態で使用される場合が多い（例えば特開平６―２１６４６８号公報）。図４は、この様なジャンクションダウンの形態で半導体レーザ素子１００を用いる場合の断面図を示している。この図に示すように、サブマウント１０１の上面には各レーザ発光部１００ａ、１００ｂに対応した個別の電極１０２ａ，１０２ｂが形成され、これらの電極とリード（図示せず）間にワイヤボンド配線１０３ａ，１０３ｂが施されている。また、半導体レーザ素子１００の基板側に設けた共通の電極１００ｃとステム１０４の段差１０５上面の間にワイヤボンド配線１０３ｃが施されている。
【０００３】
【発明が解決しようとする課題】
従来の半導体レーザ装置は、半導体レーザ素子の最上部からステムの段差上面にワイヤボンド配線を施すので、ワイヤボンド配線の引き回し長さが長くなり、近接した他のワイヤボンド配線やサブマウントの角などと接触する危険性が高い。また、ステムにワイヤボンド用と位置決め用を兼ねる段差構造１０５を必要とし、その形成のための別の加工工程が必要となる。段差構造を設けない場合は、ステム１０４にワイヤボンド用の平面領域を別途必要とするので、小型化を図りにくいなどの課題が有った。
【０００４】
そこで本発明は、ワイヤの引き回しによる短絡事故の発生を防止することを課題の1つとする。また、ステムの加工工数の削減や形状の小型化を図ることを課題の1つとする。また、光学特性の安定化を図ることを課題の1つとする。
【０００５】
【課題を解決するための手段】
本発明の半導体レーザ装置は請求項１に記載のように、複数のレ−ザ発光部を一体に備えるモノリシックタイプの半導体レーザ素子をサブマウント上にジャンクションダウンで装着した半導体レーザ装置において、前記サブマウントは、前記複数のレーザ発光部に対応した複数の個別電極と前記各レーザ発光部に共通の共通電極を同一面に配置し、前記共通電極は、前記サブマウントを貫通する金属ビアホールによって前記サブマウント裏面の金属製ステムに接続し、前記金属ビアホールは、前記各レーザ発光部の光軸と平面的に重なる位置を避けて前記サブマウントに形成していることを特徴とする。
【０００６】
本発明の半導体レーザ装置は請求項２に記載のように、前記半導体レーザ素子から前記共通電極に接続するワイヤボンド配線の位置を前記金属ビアホールと平面的に重なる位置を避けた位置としたことを特徴とする。
【０００７】
本発明の半導体レーザ装置は請求項３に記載のように、前記共通電極は、前記各レーザ発光部の光軸と平面的に重なる寸法が同じになるように形成していることを特徴とする。
【００１０】
【発明の実施の形態】
以下本発明の実施例について、図面を参照して説明する。図１は半導体レーザ装置の要部斜視図、図２は図１の要部の平面図である。
【００１１】
この実施例の半導体レーザ装置１は、ステム２の上面にサブマウント３を配置固定し、このサブマウント３の上面にモノリシックタイプの半導体レーザ素子４を配置固定して構成している。
【００１２】
ステム２は、熱伝導性、導電性が良い金属製で、銅や鉄やその合金などを加工して柱状に形成している。このステム２の近傍には、ステム２を挟むように複数のリードピン５を配置している。
【００１３】
サブマウント３は、絶縁性の材料、例えば窒化アルミニウム、炭化珪素，シリコンなどから選択した材料を用いることができ、中でも、熱伝導性が良い窒化アルミニウムを用いるのが好ましい。このサブマウント３の上面には、上面前半部分に個別電極６，７を左右に区分けして形成し、上面後半部分に共通電極８を個別電極６，７に跨るような長さをもって形成している。このサブマウント３の下面には、下面を覆うように下面電極９を形成している。
【００１４】
前記サブマウント３には、その上下を貫通するように金属ビアホール１０を形成している。この金属ビアホール１０は。サブマウント内に形成したスルーホールを金属で充填したもので、モリブデン、タングステン、金、銀、銅、ニッケルなどの金属を充填金属として用いることができる。この金属ビアホール１０は、共通電極８と下面電極９の電気的な接続を行なうために、共通電極８と平面的な重なりを持った位置に形成している。このサブマウント３は、金錫、鉛錫等の半田材を用いてステム２の所定位置に固定される。
【００１５】
前記半導体レーザ素子４は、共通の基板に形成した複数の発光領域を溝によって分離することにより形成した複数（この例では２つ）のレーザ発光部４ａ，４ｂを一体に備えるモノリシックタイプの素子で、共通基板が上に位置し、発光領域が下に位置するジャンクションダウンの形態で用いられている。このレーザ素子４の共通基板側の一方の面には、共通電極１１が形成され、反対側の面にはレーザ発光部４ａ，４ｂに対応した個別電極１２，１３を形成している。この半導体レーザ素子４は、その個別電極１２，１３がサブマウント３の個別電極６，７と対面するように位置決めされ、金錫、鉛錫等の半田材を用いてサブマウント３の上面に固定される。
【００１６】
上記のようにステム２上に固定されたサブマウント３、このサブマウント３上に固定された半導体レーザ素子４に対して、金線を用いたワイヤボンド配線１４が施される。まず、サブマウント３の個別電極６とリードピン５の間にワイヤボンド配線１４ａが施され、個別電極７とリードピン５の間にワイヤボンド配線１４ｂが施される。また、レーザ素子４の共通電極１１とサブマウント３の共通電極８の間にワイヤボンド配線１４ｃが施される。
【００１７】
ここで、ワイヤボンド配線１４ｃは、半導体レーザ素子４の光軸Ｘ１，Ｘ２をワイヤボンド配線１４ｃが遮らないように光軸Ｘ１，Ｘ２の上方を迂回して配置している。そのために、ワイヤボンド配線１４ｃと共通電極８の接点を、光軸Ｘ１，Ｘ２との平面的な重なりを避けて共通電極８の左右方向（光軸Ｘ１と直交する方向）の端に配置している。共通電極８に対するワイヤボンドは、金属ビアホール１０の真上に位置するように行なっても良いが、この実施例では、共通電極８と金属ビアホール１０の接触状態に前記ワイヤボンドが悪影響を与えないように、金属ビアホール１０との平面的な重なりを避けて、共通電極８に対するワイヤボンド配線を行なっている。
【００１８】
また、前記金属ビアホール１０の上に位置する電極８の表面は、金属ビアホール１０の伸縮などの影響を受けて凸凹面となりやすく、この凸凹面が後方レーザ光に乱反射などの悪影響を与える可能性が有る。そこで、金属ビアホール１０も光軸Ｘ１，Ｘ２との平面的な重なりを避けて共通電極８の左右方向の端に配置している。
【００１９】
上記構成の半導体レーザ装置は、リードピン５，５に選択的に所定の電圧を印加することによって動作を開始する。すなわち、リードピン５に駆動電圧を加えると、ワイヤボンド配線１４ａ、個別電極６、１２、レーザ発光部４ａ、共通電極１１、ワイヤボンド配線１４ｃ、共通電極８、金属ビアホール１０、下面電極９、ステム２を通る経路で電流が流れて光軸Ｘ１に沿ったレーザ光がレーザ発光部４ａから出力する。レーザ発光部４ｂも同様で、リードピン５、ワイヤボンド配線１４ｂを経た経路で電流が流れて光軸Ｘ２に沿ったレーザ光がレーザ発光部４ｂから出力する。レーザ素子４の前方レーザ出力に比べて低出力の後方レーザ出力は、共通電極８の上方空間を通ってモニター用の受光素子（図示せず）に入射する。ここで、共通電極８は、光軸Ｘ１，Ｘ２と平面的に重なる寸法が同じになるように、左右方向に同一の幅を持って形成しているので、共通電極８による後方モニター用光の反射状態を各レーザ発光部４ａ、４ｂで共通な状態に保つことができる。
【００２０】
また、サブマウント３の同一面上に個別電極６，７と共通電極８を配置しているので、半導体レーザ素子４の最上部に位置する電極１１に対するワイヤボンド配線１４ｃの引き回し距離を短く設定することができる。加えて、絶縁性サブマウント３の上下を金属ビアホール１０によって貫通して共通電極８とステム２との導通を図っているので、ワイヤボンド配線１４の接触事故の発生を未然に防止することができる。また、同一面上に電極６，７，８を形成しているので、検査針を当てての通電テストを事前に行なって半導体レーザ素子４の特性検査を行ない易くすることができる。
【００２１】
上記実施例は、サブマウント３として絶縁性の材料を用い、その上下の導通を金属ビアホール１０を用いて行なう場合を示したが、サブマウントの上下の導通を図るためにサブマウント材料に導電性のものを用いても良い。例えばサブマウントとして良導電性のシリコンや金属を材料として用いることができ、この場合の半導体レーザ装置は、図３に示すような構成となる。
【００２２】
すなわち、導電性材料からなるサブマウント２０の上面前半部には絶縁膜２１が形成され、この絶縁膜２１の上に、個別電極６，７が形成される。サブマウント２０の前記絶縁膜２１が形成されていない領域が共通電極８として機能する。下面電極は設けても良いが、共通電極８と同様にサブマウント２０の下面自体を前記電極９として機能させる場合は省略することができる。その他の構成は、図１，２に示した先の実施例と同様の構成とすることができる。
【００２３】
【発明の効果】
以上のように本発明によれば、ワイヤボンド用の配線の引き回し長さを短く設定でき、配線の接触による短絡事故の発生を防止することができる。また、ステムの加工工数の削減や形状の小型化を図ることができる。また、複数のレーザ発光部の出力状態を均一化して光学特性の安定化を図ることができる。
【図面の簡単な説明】
【図１】本発明の実施例を示す要部斜視図である。
【図２】サブマウント周辺部分の拡大図である。
【図３】本発明の他の実施例を示す要部斜視図である。
【図４】従来例を示す断面図である。
【符号の説明】
１ 半導体レーザ装置
２ ステム
３ サブマウント
４ 半導体レーザ素子
１０ 金属ビアホール[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor laser device.
[0002]
[Prior art]
A semiconductor laser device in which a monolithic type semiconductor laser element integrally provided with a plurality of laser light emitting portions is mounted on a stem via a submount has a light emitting region (active layer) in order to improve the heat dissipation characteristics of the semiconductor laser element. ) Is often used in the form of a junction-down located below (for example, JP-A-6-216468). FIG. 4 shows a cross-sectional view when the semiconductor laser device 100 is used in such a junction-down configuration. As shown in this figure, individual electrodes 102a and 102b corresponding to the laser light emitting portions 100a and 100b are formed on the upper surface of the submount 101, and wire bond wiring 103a is provided between these electrodes and leads (not shown). , 103b. A wire bond wiring 103 c is provided between the common electrode 100 c provided on the substrate side of the semiconductor laser element 100 and the upper surface of the step 105 of the stem 104.
[0003]
[Problems to be solved by the invention]
In the conventional semiconductor laser device, the wire bond wiring is applied from the top of the semiconductor laser element to the upper surface of the stepped portion of the stem, so that the length of the wire bond wiring is increased, and other adjacent wire bond wiring, submount corners, etc. There is a high risk of contact. Further, the step structure 105 serving both for wire bonding and positioning is required for the stem, and another processing step for forming the step structure 105 is required. In the case where the step structure is not provided, a separate plane area for wire bonding is required for the stem 104, and there is a problem that it is difficult to reduce the size.
[0004]
Accordingly, an object of the present invention is to prevent the occurrence of a short circuit accident due to the routing of the wire. Another challenge is to reduce the number of stem processing steps and to reduce the size of the stem. Another object is to stabilize the optical characteristics.
[0005]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a semiconductor laser device according to claim 1, wherein a monolithic type semiconductor laser element integrally provided with a plurality of laser light emitting portions is mounted on a submount in a junction-down manner. In the mount, a plurality of individual electrodes corresponding to the plurality of laser light emitting units and a common electrode common to the laser light emitting units are arranged on the same surface, and the common electrode is formed by the metal via hole penetrating the submount. The metal via hole is connected to a metal stem on the back of the mount, and the metal via hole is formed in the submount so as not to overlap with the optical axis of each laser light emitting portion in a plane .
[0006]
According to the semiconductor laser device of the present invention, as described in claim 2, the position of the wire bond wiring connected from the semiconductor laser element to the common electrode is set to a position that avoids a position overlapping the metal via hole in a plane. Features.
[0007]
According to a third aspect of the present invention, in the semiconductor laser device according to the third aspect, the common electrode is formed to have the same size as the plane overlapped with the optical axis of each of the laser light emitting portions. .
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of the main part of the semiconductor laser device, and FIG. 2 is a plan view of the main part of FIG.
[0011]
In the semiconductor laser device 1 of this embodiment, a submount 3 is arranged and fixed on the upper surface of a stem 2, and a monolithic type semiconductor laser element 4 is arranged and fixed on the upper surface of the submount 3.
[0012]
The stem 2 is made of a metal having good thermal conductivity and conductivity, and is formed in a columnar shape by processing copper, iron, an alloy thereof, or the like. A plurality of lead pins 5 are arranged near the stem 2 so as to sandwich the stem 2.
[0013]
The submount 3 can be made of an insulating material, for example, a material selected from aluminum nitride, silicon carbide, silicon, etc. Among them, it is preferable to use aluminum nitride having good thermal conductivity. On the upper surface of the submount 3, the individual electrodes 6 and 7 are formed on the upper half of the upper surface so as to be divided into right and left, and the common electrode 8 is formed on the upper half of the upper surface with a length extending over the individual electrodes 6 and 7. Yes. A lower surface electrode 9 is formed on the lower surface of the submount 3 so as to cover the lower surface.
[0014]
A metal via hole 10 is formed in the submount 3 so as to penetrate through the top and bottom. This metal via hole 10 is. A through-hole formed in the submount is filled with a metal, and a metal such as molybdenum, tungsten, gold, silver, copper, or nickel can be used as the filling metal. The metal via hole 10 is formed at a position having a planar overlap with the common electrode 8 in order to electrically connect the common electrode 8 and the lower electrode 9. The submount 3 is fixed to a predetermined position of the stem 2 using a solder material such as gold tin or lead tin.
[0015]
The semiconductor laser element 4 is a monolithic type element integrally including a plurality (two in this example) of laser light emitting portions 4a and 4b formed by separating a plurality of light emitting regions formed on a common substrate by grooves. The common substrate is located on the upper side and the light emitting region is located on the lower side. A common electrode 11 is formed on one surface of the laser element 4 on the common substrate side, and individual electrodes 12 and 13 corresponding to the laser light emitting portions 4a and 4b are formed on the opposite surface. The semiconductor laser element 4 is positioned so that the individual electrodes 12 and 13 face the individual electrodes 6 and 7 of the submount 3 and fixed to the upper surface of the submount 3 using a solder material such as gold tin or lead tin. Is done.
[0016]
As described above, the wire mount wiring 14 using a gold wire is applied to the submount 3 fixed on the stem 2 and the semiconductor laser element 4 fixed on the submount 3. First, a wire bond wiring 14 a is applied between the individual electrode 6 and the lead pin 5 of the submount 3, and a wire bond wiring 14 b is applied between the individual electrode 7 and the lead pin 5. A wire bond wiring 14 c is provided between the common electrode 11 of the laser element 4 and the common electrode 8 of the submount 3.
[0017]
Here, the wire bond wiring 14c is arranged around the optical axes X1 and X2 so as not to block the optical axes X1 and X2 of the semiconductor laser element 4 by the wire bond wiring 14c. For this purpose, the contact point between the wire bond wiring 14c and the common electrode 8 is arranged at the end of the common electrode 8 in the left-right direction (direction perpendicular to the optical axis X1) while avoiding a planar overlap with the optical axes X1 and X2. Yes. The wire bond to the common electrode 8 may be performed so as to be positioned immediately above the metal via hole 10. However, in this embodiment, the wire bond does not adversely affect the contact state between the common electrode 8 and the metal via hole 10. In addition, wire bonding wiring to the common electrode 8 is performed while avoiding planar overlap with the metal via hole 10.
[0018]
In addition, the surface of the electrode 8 positioned on the metal via hole 10 is likely to be uneven due to the expansion and contraction of the metal via hole 10, and this uneven surface may adversely affect the back laser light such as irregular reflection. Yes. Therefore, the metal via hole 10 is also disposed at the end in the left-right direction of the common electrode 8 while avoiding a planar overlap with the optical axes X1 and X2.
[0019]
The semiconductor laser device having the above configuration starts operation by selectively applying a predetermined voltage to the lead pins 5 and 5. That is, when a drive voltage is applied to the lead pin 5, the wire bond wiring 14 a, the individual electrodes 6, 12, the laser light emitting portion 4 a, the common electrode 11, the wire bond wiring 14 c, the common electrode 8, the metal via hole 10, the bottom electrode 9, the stem 2 A current flows along a path passing through and a laser beam along the optical axis X1 is output from the laser emitting unit 4a. The same applies to the laser light emitting portion 4b, and a current flows through a path passing through the lead pin 5 and the wire bond wiring 14b, and laser light along the optical axis X2 is output from the laser light emitting portion 4b. The rear laser output, which is lower in output than the front laser output of the laser element 4, enters the light receiving element for monitoring (not shown) through the space above the common electrode 8. Here, since the common electrode 8 is formed with the same width in the left-right direction so that the dimension overlapping the optical axes X1 and X2 in the same plane is the same, The reflection state can be maintained in a state common to the laser light emitting units 4a and 4b.
[0020]
Further, since the individual electrodes 6 and 7 and the common electrode 8 are arranged on the same surface of the submount 3, the distance of the wire bond wiring 14c to the electrode 11 positioned at the uppermost part of the semiconductor laser element 4 is set short. be able to. In addition, since the upper and lower sides of the insulating submount 3 are penetrated by the metal via holes 10 to conduct the common electrode 8 and the stem 2, it is possible to prevent the occurrence of a contact accident of the wire bond wiring 14. . Further, since the electrodes 6, 7, and 8 are formed on the same surface, it is possible to easily perform the characteristic inspection of the semiconductor laser element 4 by conducting an energization test in advance by applying an inspection needle.
[0021]
Although the above embodiment shows the case where an insulating material is used as the submount 3 and the upper and lower continuity is performed using the metal via hole 10, the submount material is electrically conductive to achieve the upper and lower continuity of the submount. May be used. For example, a highly conductive silicon or metal can be used as a material for the submount, and the semiconductor laser device in this case has a configuration as shown in FIG.
[0022]
That is, the insulating film 21 is formed on the upper half of the upper surface of the submount 20 made of a conductive material, and the individual electrodes 6 and 7 are formed on the insulating film 21. A region of the submount 20 where the insulating film 21 is not formed functions as the common electrode 8. Although the lower surface electrode may be provided, it can be omitted when the lower surface of the submount 20 functions as the electrode 9 similarly to the common electrode 8. Other configurations can be the same as those of the previous embodiment shown in FIGS.
[0023]
【The invention's effect】
As described above, according to the present invention, it is possible to set the length of the wire bonding wiring to be short, and to prevent occurrence of a short circuit accident due to wiring contact. In addition, the number of stem processing steps can be reduced and the size of the stem can be reduced. In addition, it is possible to stabilize the optical characteristics by making the output states of the plurality of laser light emitting portions uniform.
[Brief description of the drawings]
FIG. 1 is a perspective view of an essential part showing an embodiment of the present invention.
FIG. 2 is an enlarged view of a peripheral portion of a submount.
FIG. 3 is a perspective view of a main part showing another embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor laser apparatus 2 Stem 3 Submount 4 Semiconductor laser element 10 Metal via hole

Claims (3)

複数のレ−ザ発光部を一体に備えるモノリシックタイプの半導体レーザ素子をサブマウント上にジャンクションダウンで装着した半導体レーザ装置において、前記サブマウントは、前記複数のレーザ発光部に対応した複数の個別電極と前記各レーザ発光部に共通の共通電極を同一面に配置し、前記共通電極は、前記サブマウントを貫通する金属ビアホールによって前記サブマウント裏面の金属製ステムに接続し、前記金属ビアホールは、前記各レーザ発光部の光軸と平面的に重なる位置を避けて前記サブマウントに形成していることを特徴とする半導体レーザ装置。In a semiconductor laser device in which a monolithic type semiconductor laser element integrally provided with a plurality of laser light emitting units is mounted on a submount in a junction down manner, the submount includes a plurality of individual electrodes corresponding to the plurality of laser light emitting units. And a common electrode common to the laser light emitting portions are arranged on the same surface, the common electrode is connected to a metal stem on the back surface of the submount by a metal via hole penetrating the submount, and the metal via hole is A semiconductor laser device characterized in that it is formed on the submount so as to avoid a position overlapping with the optical axis of each laser light emitting section in a plane . 前記半導体レーザ素子から前記共通電極に接続するワイヤボンド配線の位置を前記金属ビアホールと平面的に重なる位置を避けた位置としたことを特徴とする請求項１記載の半導体レーザ装置。 2. The semiconductor laser device according to claim 1 , wherein a position of the wire bond wiring connected from the semiconductor laser element to the common electrode is a position avoiding a position overlapping the metal via hole in a plane . 前記共通電極は、前記各レーザ発光部の光軸と平面的に重なる寸法が同じになるように形成していることを特徴とする請求項１〜２記載の半導体レーザ装置。 3. The semiconductor laser device according to claim 1, wherein the common electrode is formed so as to have the same dimension in plan view as the optical axis of each laser light emitting unit .
JP2000098770A 2000-03-31 2000-03-31 Semiconductor laser device Expired - Fee Related JP3639497B2 (en)

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JP3759081B2 (en) 2002-07-18 2006-03-22 Ｎｅｃ化合物デバイス株式会社 Semiconductor laser device
JP4586337B2 (en) * 2002-08-26 2010-11-24 住友電気工業株式会社 Semiconductor laser module and semiconductor laser device
CN100552993C (en) * 2006-09-22 2009-10-21 亿光电子工业股份有限公司 High heat conduction LED packaging structure
CA2708392C (en) * 2007-12-21 2014-03-18 Mitsubishi Electric Corporation Laser light source module
JP5410195B2 (en) * 2009-08-11 2014-02-05 日本オクラロ株式会社 Multi-beam semiconductor laser device
JP5779214B2 (en) * 2013-10-01 2015-09-16 ウシオオプトセミコンダクター株式会社 Multi-beam semiconductor laser device
JP6940750B2 (en) * 2017-04-28 2021-09-29 日亜化学工業株式会社 Laser device
US10714891B2 (en) 2018-07-06 2020-07-14 Himax Technologies Limited Projector, electronic device having projector and associated manufacturing method
JP2020020861A (en) * 2018-07-30 2020-02-06 奇景光電股▲ふん▼有限公司 Projector, electronic device having projector, and related manufacturing method
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