CN118016676A - Array substrate and display panel - Google Patents
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- CN118016676A CN118016676A CN202410190276.4A CN202410190276A CN118016676A CN 118016676 A CN118016676 A CN 118016676A CN 202410190276 A CN202410190276 A CN 202410190276A CN 118016676 A CN118016676 A CN 118016676A
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- 230000007797 corrosion Effects 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
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- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
- H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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Abstract
本申请公开一种阵列基板及显示面板,能够解决上层走线与下层走线连接失效或阻抗增加的问题。阵列基板包括:基底;第一金属层,包括第一走线;第一绝缘层,包括第一过孔;第二金属层,包括连接走线;第二绝缘层,包括第二过孔;第三金属层,包括第二走线;其中,在垂直于基底所在平面的方向上,第一过孔与第一走线重叠设置,连接走线通过第一过孔与第一走线连接,第二过孔与连接走线重叠设置,第二走线通过第二过孔与连接走线连接;其中,第二金属层包括比第三金属层的耐腐蚀性高的材料。
The present application discloses an array substrate and a display panel, which can solve the problem of connection failure or impedance increase between upper and lower wiring. The array substrate includes: a substrate; a first metal layer, including a first wiring; a first insulating layer, including a first via; a second metal layer, including a connecting wiring; a second insulating layer, including a second via; a third metal layer, including a second wiring; wherein, in a direction perpendicular to the plane where the substrate is located, the first via is overlapped with the first wiring, the connecting wiring is connected to the first wiring through the first via, the second via is overlapped with the connecting wiring, and the second wiring is connected to the connecting wiring through the second via; wherein, the second metal layer includes a material with higher corrosion resistance than the third metal layer.
Description
技术领域Technical Field
本申请涉及显示技术领域,尤其涉及一种阵列基板及显示面板。The present application relates to the field of display technology, and in particular to an array substrate and a display panel.
背景技术Background technique
目前TFT-LCD(Thin Film Transistor-Liquid Crystal Display,薄膜晶体管液晶显示器)已经广泛用于手机、电视、笔记电脑等的显示屏幕。在液晶显示面板或阵列基板中,上层金属层中的走线通过绝缘层中的过孔连接下层金属层中的走线。Currently, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) has been widely used in display screens of mobile phones, televisions, notebook computers, etc. In a liquid crystal display panel or array substrate, the wiring in the upper metal layer is connected to the wiring in the lower metal layer through vias in the insulating layer.
然而,在上层金属层中的走线与下层金属层中的走线在过孔连接部位容易被水汽等腐蚀,导致过孔连接失效,从而使得上层金属层中的走线与下层金属层中的走线连接失效或阻抗增加。However, the wiring in the upper metal layer and the wiring in the lower metal layer are easily corroded by water vapor at the via connection portion, resulting in failure of the via connection, thereby causing failure of the connection between the wiring in the upper metal layer and the wiring in the lower metal layer or increased impedance.
发明内容Summary of the invention
本申请实施例提供一种阵列基板及显示面板,能够解决现有技术中过孔连接部位容易被水汽等腐蚀,导致过孔连接失效,从而使得上层金属层中的走线与下层金属层中的走线连接失效或阻抗增加的问题。The embodiments of the present application provide an array substrate and a display panel, which can solve the problem in the prior art that the via connection parts are easily corroded by water vapor, etc., resulting in failure of the via connection, thereby causing the connection between the wiring in the upper metal layer and the wiring in the lower metal layer to fail or increase impedance.
本申请实施例的第一方面,提供了一种阵列基板,包括:According to a first aspect of an embodiment of the present application, an array substrate is provided, comprising:
基底;substrate;
第一金属层,设置于所述基底的一侧,所述第一金属层包括至少一条第一走线;A first metal layer is disposed on one side of the substrate, wherein the first metal layer includes at least one first trace;
第一绝缘层,设置于所述第一金属层远离所述基底的一侧,所述第一绝缘层包括至少一个第一过孔;A first insulating layer, disposed on a side of the first metal layer away from the substrate, the first insulating layer comprising at least one first via hole;
第二金属层,设置于所述第一绝缘层远离所述基底的一侧,所述第二金属层包括至少一条连接走线;A second metal layer is disposed on a side of the first insulating layer away from the substrate, the second metal layer comprising at least one connecting trace;
第二绝缘层,设置于所述第二金属层远离所述基底的一侧,所述第二绝缘层包括至少一个第二过孔;A second insulating layer, disposed on a side of the second metal layer away from the substrate, the second insulating layer comprising at least one second via hole;
第三金属层,设置于所述第二绝缘层远离所述基底的一侧,所述第三金属层包括至少一条第二走线;A third metal layer is disposed on a side of the second insulating layer away from the substrate, and the third metal layer includes at least one second trace;
其中,在垂直于所述基底所在平面的方向上,所述第一过孔与所述第一走线重叠设置,所述连接走线通过所述第一过孔与所述第一走线连接;Wherein, in a direction perpendicular to the plane where the substrate is located, the first via hole and the first routing line are arranged to overlap, and the connecting routing line is connected to the first routing line through the first via hole;
其中,在垂直于所述基底所在平面的方向上,所述第二过孔与所述连接走线重叠设置,所述第二走线通过所述第二过孔与所述连接走线连接;Wherein, in a direction perpendicular to the plane where the substrate is located, the second via hole and the connecting wire are arranged to overlap, and the second wire is connected to the connecting wire through the second via hole;
其中,所述第二金属层包括比所述第三金属层的耐腐蚀性高的材料。The second metal layer includes a material having higher corrosion resistance than that of the third metal layer.
在一些实施方式中,所述第二金属层包括至少两层金属子层,所述第二金属层的至少一所述金属子层比所述第三金属层的耐腐蚀性高。In some embodiments, the second metal layer includes at least two metal sub-layers, and at least one of the metal sub-layers of the second metal layer has higher corrosion resistance than that of the third metal layer.
在一些实施方式中,所述第二金属层的材料包括钛、铬、镍中至少一种。In some embodiments, the material of the second metal layer includes at least one of titanium, chromium, and nickel.
在一些实施方式中,所述第三金属层的材料包括透明导电金属氧化物、铜、铝中至少一种。In some embodiments, the material of the third metal layer includes at least one of transparent conductive metal oxide, copper, and aluminum.
在一些实施方式中,所述第一绝缘层包括多个所述第一过孔,所述第二绝缘层包括多个所述第二过孔;In some embodiments, the first insulating layer includes a plurality of the first via holes, and the second insulating layer includes a plurality of the second via holes;
其中,在垂直于所述基底所在平面的方向上,至少部分所述第二过孔与对应的所述第一过孔重叠设置;或/和Wherein, in a direction perpendicular to the plane where the substrate is located, at least part of the second via holes is arranged overlapping with the corresponding first via holes; or/and
至少部分所述第二过孔与所述第一过孔错位设置。At least part of the second via holes is staggered with the first via holes.
在一些实施方式中,所述第一过孔的数量与所述第二过孔的数量相同;In some embodiments, the number of the first vias is the same as the number of the second vias;
在垂直于所述基底所在平面的方向上,多个所述第二过孔与多个所述第一过孔均错位设置或均重叠设置。In a direction perpendicular to the plane where the substrate is located, the plurality of second via holes and the plurality of first via holes are all staggered or overlapped.
在一些实施方式中,所述第一过孔的数量小于所述第二过孔的数量的数量;In some embodiments, the number of the first vias is less than the number of the second vias;
在垂直于所述基底所在平面的方向上,所述第一过孔均与对应的所述第二过孔重叠设置,部分所述第二过孔与所述第一过孔错位设置。In a direction perpendicular to the plane where the substrate is located, the first via holes are all overlapped with the corresponding second via holes, and some of the second via holes are staggered with the first via holes.
在一些实施方式中,所述第一过孔的数量大于所述第二过孔的数量的数量;In some embodiments, the number of the first vias is greater than the number of the second vias;
在垂直于所述基底所在平面的方向上,所述第二过孔均与对应的所述第一过孔重叠设置,部分所述第一过孔与所述第二过孔错位设置。In a direction perpendicular to the plane where the substrate is located, the second via holes are all overlapped with the corresponding first via holes, and some of the first via holes are staggered with the second via holes.
在一些实施方式中,所述阵列基板包括多个薄膜晶体管,以及像素电极和公共电极中至少一个;In some embodiments, the array substrate includes a plurality of thin film transistors, and at least one of a pixel electrode and a common electrode;
所述第一金属层还包括所述薄膜晶体管的栅极;The first metal layer also includes a gate of the thin film transistor;
所述第一绝缘层为栅极绝缘层;The first insulating layer is a gate insulating layer;
所述第二金属层还包括所述薄膜晶体管的源极和漏极;The second metal layer also includes a source and a drain of the thin film transistor;
所述第三金属层还包括所述像素电极或所述公共电极。The third metal layer further includes the pixel electrode or the common electrode.
在一些实施方式中,所述阵列基板包括显示区和位于所述显示区周围的非显示区,所述第一走线、所述连接走线和所述第二走线均位于所述非显示区。In some embodiments, the array substrate includes a display area and a non-display area located around the display area, and the first wiring, the connecting wiring, and the second wiring are all located in the non-display area.
本申请实施例的第二方面,提供了一种显示面板,包括上述中任一项所述的阵列基板。According to a second aspect of the embodiments of the present application, a display panel is provided, comprising any one of the array substrates described above.
本申请实施例提供的阵列基板、显示面板中,在本申请中,增加设置了连接走线,第二走线通过第二过孔与连接走线连接,连接走线通过第一过孔与第一走线连接,使得第二走线通过连接走线、第二过孔和第一过孔与第一走线连接,第一方面,不但减小了发生腐蚀失效之前的第一走线和第二走线的总电阻,也减小了发生腐蚀失效之后的第一走线和第二走线的总电阻。第二方面,由于第二金属层包括比第三金属层的耐腐蚀性高的材料,第二金属层可以阻挡腐蚀进一步延伸至第一走线上,从而确保了多个第一过孔的正常连接。第三方面,当某一第二过孔发生腐蚀时,通过发生腐蚀的第二过孔之外的第二过孔和多个第一过孔传递电信号,又进一步确保了可以减小发生腐蚀失效之后的第一走线和第二走线的总电阻。第四方面,在相关技术中,第三金属层或第二走线自身没来得及发生腐蚀,但水汽等透过第二走线达到第一走线,使得第一走线发生了腐蚀,因此,在本申请实施例中的第二金属层或连接走线阻挡了水汽到达第一走线的路径,确保第一走线不会被腐蚀。In the array substrate and display panel provided by the embodiments of the present application, in the present application, a connecting line is additionally provided, the second line is connected to the connecting line through the second via hole, and the connecting line is connected to the first line through the first via hole, so that the second line is connected to the first line through the connecting line, the second via hole and the first via hole. On the first hand, not only the total resistance of the first line and the second line before the corrosion failure is reduced, but also the total resistance of the first line and the second line after the corrosion failure is reduced. On the second hand, since the second metal layer includes a material with higher corrosion resistance than the third metal layer, the second metal layer can prevent the corrosion from further extending to the first line, thereby ensuring the normal connection of multiple first via holes. On the third hand, when a second via hole is corroded, the electrical signal is transmitted through the second via hole other than the corroded second via hole and multiple first via holes, which further ensures that the total resistance of the first line and the second line after the corrosion failure can be reduced. Fourthly, in the related art, the third metal layer or the second routing itself does not have time to corrode, but water vapor and the like pass through the second routing to reach the first routing, causing corrosion of the first routing. Therefore, the second metal layer or connecting routing in the embodiment of the present application blocks the path for water vapor to reach the first routing, ensuring that the first routing will not be corroded.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本申请实施例提供的相关技术中阵列基板的部分膜层的局部俯视示意图;FIG1 is a partial top view schematic diagram of a portion of film layers of an array substrate in the related art provided by an embodiment of the present application;
图2为本申请实施例提供的图1中C-C虚线处的截面示意图;FIG2 is a schematic cross-sectional view of the C-C dashed line in FIG1 provided in an embodiment of the present application;
图3为本申请实施例提供的图1中D-D虚线处的截面示意图;FIG3 is a schematic cross-sectional view of the dashed line D-D in FIG1 provided in an embodiment of the present application;
图4为本申请实施例提供的图2中阵列基板的一种等效电路示意图;FIG4 is a schematic diagram of an equivalent circuit of the array substrate in FIG2 provided in an embodiment of the present application;
图5为本申请实施例提供的图4中等效电路中部分过孔失效的示意图;FIG5 is a schematic diagram of partial via failure in the equivalent circuit of FIG4 provided in an embodiment of the present application;
图6为本申请实施例提供的一种阵列基板的部分膜层的局部俯视示意图;FIG6 is a partial top view schematic diagram of a portion of a film layer of an array substrate provided in an embodiment of the present application;
图7为本申请实施例提供的第一种阵列基板的C-C虚线处或方向的截面示意图;FIG7 is a schematic cross-sectional view of a first array substrate provided in an embodiment of the present application, taken along a C-C dashed line or in a direction;
图8为本申请实施例提供的图6中D-D虚线处的截面示意;FIG8 is a schematic diagram of a cross section at the D-D dashed line in FIG6 provided in an embodiment of the present application;
图9为本申请实施例提供的第一种阵列基板的等效电路示意图;FIG9 is a schematic diagram of an equivalent circuit of a first array substrate provided in an embodiment of the present application;
图10为本申请实施例提供的第一种阵列基板的等效电路中部分过孔失效的示意图;FIG10 is a schematic diagram of partial via failure in an equivalent circuit of a first array substrate provided in an embodiment of the present application;
图11为本申请实施例提供的第二种阵列基板的C-C虚线处或方向的截面示意图;FIG11 is a schematic cross-sectional view of a second array substrate provided in an embodiment of the present application, taken along a C-C dotted line or in a direction;
图12为本申请实施例提供的第二种阵列基板的等效电路中部分过孔失效的示意图;FIG12 is a schematic diagram of partial via failure in an equivalent circuit of a second array substrate provided in an embodiment of the present application;
图13为本申请实施例提供的第三种阵列基板的C-C虚线处或方向的截面示意图;FIG13 is a schematic cross-sectional view of a third array substrate provided in an embodiment of the present application, taken along a C-C dotted line or in a direction;
图14为本申请实施例提供的第三种阵列基板的等效电路中部分过孔失效的示意图;FIG14 is a schematic diagram of partial via failure in an equivalent circuit of a third array substrate provided in an embodiment of the present application;
图15为本申请实施例提供的第四种阵列基板的C-C虚线处或方向的截面示意图;FIG15 is a schematic cross-sectional view of a fourth array substrate provided in an embodiment of the present application, taken along a C-C dotted line or in a direction thereof;
图16为本申请实施例提供的第四种阵列基板的等效电路中部分过孔失效的示意图。FIG. 16 is a schematic diagram of partial via failure in an equivalent circuit of the fourth array substrate provided in an embodiment of the present application.
具体实施方式Detailed ways
为了更好的理解本说明书实施例提供的技术方案,下面通过附图以及具体实施例对本说明书实施例的技术方案做详细的说明,应当理解本说明书实施例以及实施例中的具体特征是对本说明书实施例技术方案的详细的说明,而不是对本说明书技术方案的限定,在不冲突的情况下,本说明书实施例以及实施例中的技术特征可以相互组合。In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification are described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.
在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。术语“两个以上”包括两个或大于两个的情况。In this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements limited by the statement "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements. The term "more than two" includes two or more than two situations.
请参阅图1至图5,图1为本申请实施例提供的相关技术中阵列基板的部分膜层的局部俯视示意图;图2为本申请实施例提供的图1中C-C虚线处的截面示意图;图3为本申请实施例提供的图1中D-D虚线处的截面示意图;图4为本申请实施例提供的图2中阵列基板的一种等效电路示意图;图5为本申请实施例提供的图4中等效电路中部分过孔失效的示意图;图1中示意了阵列基板的部分膜层。Please refer to Figures 1 to 5, Figure 1 is a partial top view schematic diagram of part of the film layer of the array substrate in the related technology provided in an embodiment of the present application; Figure 2 is a cross-sectional schematic diagram at the C-C dotted line in Figure 1 provided in an embodiment of the present application; Figure 3 is a cross-sectional schematic diagram at the D-D dotted line in Figure 1 provided in an embodiment of the present application; Figure 4 is an equivalent circuit schematic diagram of the array substrate in Figure 2 provided in an embodiment of the present application; Figure 5 is a schematic diagram of the failure of part of the vias in the equivalent circuit in Figure 4 provided in an embodiment of the present application; Figure 1 illustrates part of the film layer of the array substrate.
在相关技术中,阵列基板或显示面板包括第一金属层12、第一绝缘层13和第二绝缘层15中至少一个、第三金属层16,第一金属层12包括第一走线121,第三金属层16包括第二走线161,第一绝缘层13或/第二绝缘层15包括大通孔1351,第二走线161通过大通孔1351连接第一走线121,以实现第一走线121与第二走线161的电性连接。然而,在大通孔1351的连接部位容易发生腐蚀,例如被水汽、氧气等腐蚀,导致第二走线161通过大通孔1351连接第一走线121失效,如图5所示,使得第二走线161与第一走线121连接失效或阻抗增加,图5中叉号(“Ⅹ”号)表示一个大通孔1351部位的连接被腐蚀而失效。经过发明人努力分析发现,特别是在窄边框产品中,第一走线121、第二走线161和大通孔1351位于非显示区时,连接部位更容易被水汽等腐蚀,导致第二走线161与第一走线121连接失效或阻抗增加变得更为恶化。In the related art, the array substrate or display panel includes a first metal layer 12, at least one of a first insulating layer 13 and a second insulating layer 15, and a third metal layer 16. The first metal layer 12 includes a first wiring 121, the third metal layer 16 includes a second wiring 161, the first insulating layer 13 or/the second insulating layer 15 includes a large through hole 1351, and the second wiring 161 is connected to the first wiring 121 through the large through hole 1351 to achieve electrical connection between the first wiring 121 and the second wiring 161. However, corrosion is easily caused at the connection part of the large through hole 1351, for example, corrosion by water vapor, oxygen, etc., resulting in failure of the second wiring 161 to connect to the first wiring 121 through the large through hole 1351, as shown in FIG. 5, so that the connection between the second wiring 161 and the first wiring 121 fails or the impedance increases. The cross ("X") in FIG. 5 indicates that the connection at the large through hole 1351 is corroded and fails. After diligent analysis, the inventors discovered that, especially in narrow-frame products, when the first wiring 121, the second wiring 161, and the large through hole 1351 are located in the non-display area, the connection parts are more easily corroded by water vapor, etc., resulting in failure of the connection between the second wiring 161 and the first wiring 121 or worsening impedance increase.
有鉴于此,本申请提供了一种阵列基板及显示面板,可以解决上述的问题。In view of this, the present application provides an array substrate and a display panel, which can solve the above problems.
本申请提供了一种阵列基板,包括:基底;第一金属层,设置于基底的一侧,第一金属层包括至少一条第一走线;第一绝缘层,设置于第一金属层远离基底的一侧,第一绝缘层包括至少一个第一过孔;第二金属层,设置于第一绝缘层远离基底的一侧,第二金属层包括至少一条连接走线;第二绝缘层,设置于第二金属层远离基底的一侧,第二绝缘层包括至少一个第二过孔;第三金属层,设置于第二绝缘层远离基底的一侧,第三金属层包括至少一条第二走线;其中,在垂直于基底所在平面的方向上,第一过孔与第一走线重叠设置,连接走线通过第一过孔与第一走线连接;其中,在垂直于基底所在平面的方向上,第二过孔与连接走线重叠设置,第二走线通过第二过孔与连接走线连接;其中,第二金属层包括比第三金属层的耐腐蚀性高的材料。The present application provides an array substrate, comprising: a substrate; a first metal layer, arranged on one side of the substrate, the first metal layer comprising at least one first routing line; a first insulating layer, arranged on a side of the first metal layer away from the substrate, the first insulating layer comprising at least one first via hole; a second metal layer, arranged on a side of the first insulating layer away from the substrate, the second metal layer comprising at least one connecting routing line; a second insulating layer, arranged on a side of the second metal layer away from the substrate, the second insulating layer comprising at least one second via hole; a third metal layer, arranged on a side of the second insulating layer away from the substrate, the third metal layer comprising at least one second routing line; wherein, in a direction perpendicular to the plane where the substrate is located, the first via hole is arranged to overlap with the first routing line, and the connecting routing line is connected to the first routing line through the first via hole; wherein, in a direction perpendicular to the plane where the substrate is located, the second via hole is arranged to overlap with the connecting routing line, and the second routing line is connected to the connecting routing line through the second via hole; wherein, the second metal layer comprises a material having higher corrosion resistance than that of the third metal layer.
本申请还提供了一种包括上述阵列基板的显示面板。The present application also provides a display panel including the above array substrate.
本申请还提供了一种包括上述阵列基板或/和上述显示面板的显示装置。The present application also provides a display device including the above array substrate and/or the above display panel.
请参阅图6至图9,图6为本申请实施例提供的一种阵列基板的部分膜层的局部俯视示意图;图7为本申请实施例提供的第一种阵列基板的C-C虚线处或方向的截面示意图;图8为本申请实施例提供的图6中D-D虚线处的截面示意;图9为本申请实施例提供的第一种阵列基板的等效电路示意图;图10为本申请实施例提供的第一种阵列基板的等效电路中部分过孔失效的示意图。Please refer to Figures 6 to 9, Figure 6 is a partial top view schematic diagram of a part of the film layer of an array substrate provided in an embodiment of the present application; Figure 7 is a cross-sectional schematic diagram at or in the direction of the C-C dotted line of the first array substrate provided in an embodiment of the present application; Figure 8 is a cross-sectional schematic diagram at the D-D dotted line in Figure 6 provided in an embodiment of the present application; Figure 9 is a schematic diagram of an equivalent circuit of the first array substrate provided in an embodiment of the present application; Figure 10 is a schematic diagram of the failure of some vias in the equivalent circuit of the first array substrate provided in an embodiment of the present application.
本申请提供了一种阵列基板100,阵列基板100包括基底11、第一金属层12、第一绝缘层13、第二金属层14、第二绝缘层15和第三金属层16。第一金属层12设置于基底11的一侧,第一金属层12包括至少一条第一走线121;第一绝缘层13设置于第一金属层12远离基底11的一侧,第一绝缘层13包括至少一个第一过孔131;第二金属层14设置于第一绝缘层13远离基底11的一侧,第二金属层14包括至少一条连接走线141;第二绝缘层15设置于第二金属层14远离基底11的一侧,第二绝缘层15包括至少一个第二过孔151;第三金属层16设置于第二绝缘层15远离基底11的一侧,第三金属层16包括至少一条第二走线161;其中,在垂直于基底11所在平面的方向上,第一过孔131与第一走线121重叠设置,连接走线141通过第一过孔131与第一走线121连接;其中,在垂直于基底11所在平面的方向上,第二过孔151与连接走线141重叠设置,第二走线161通过第二过孔151与连接走线141连接;其中,第二金属层14包括比第三金属层16的耐腐蚀性高的材料。The present application provides an array substrate 100, which includes a substrate 11, a first metal layer 12, a first insulating layer 13, a second metal layer 14, a second insulating layer 15, and a third metal layer 16. The first metal layer 12 is disposed on one side of the substrate 11, and the first metal layer 12 includes at least one first trace 121; the first insulating layer 13 is disposed on a side of the first metal layer 12 away from the substrate 11, and the first insulating layer 13 includes at least one first via 131; the second metal layer 14 is disposed on a side of the first insulating layer 13 away from the substrate 11, and the second metal layer 14 includes at least one connecting trace 141; the second insulating layer 15 is disposed on a side of the second metal layer 14 away from the substrate 11, and the second insulating layer 15 includes at least one second via 151; the third metal layer 16 is disposed on the second insulating layer 14 On the side of layer 15 away from the substrate 11, the third metal layer 16 includes at least one second trace 161; wherein, in a direction perpendicular to the plane where the substrate 11 is located, the first via 131 and the first trace 121 are overlapped, and the connecting trace 141 is connected to the first trace 121 through the first via 131; wherein, in a direction perpendicular to the plane where the substrate 11 is located, the second via 151 and the connecting trace 141 are overlapped, and the second trace 161 is connected to the connecting trace 141 through the second via 151; wherein the second metal layer 14 includes a material with higher corrosion resistance than the third metal layer 16.
示例地,基底11的材料可以为玻璃或柔性基底,在此不做限定。For example, the material of the substrate 11 may be glass or a flexible substrate, which is not limited here.
示例地,如图7所示,垂直于基底11所在平面的方向为第一方向Y。For example, as shown in FIG. 7 , the direction perpendicular to the plane where the substrate 11 is located is the first direction Y.
在本申请中,增加设置了连接走线141,第二走线161通过第二过孔151与连接走线141连接,连接走线141通过第一过孔131与第一走线121连接,使得第二走线161通过连接走线141、第二过孔151和第一过孔131与第一走线121连接。In the present application, a connecting line 141 is additionally provided, and the second line 161 is connected to the connecting line 141 through the second via 151, and the connecting line 141 is connected to the first line 121 through the first via 131, so that the second line 161 is connected to the first line 121 through the connecting line 141, the second via 151 and the first via 131.
如图4所示,以3个大通孔1351为例,相关技术中第一走线121和第二走线161的总电阻为R总,相邻两个大通孔1351之间的第一走线121的线段的电阻为R,相邻两个大通孔1351之间的第二走线161的线段的电阻也为R,则满足 如图5所示,当3个大通孔1351中一个连接部位被腐蚀(图5中叉号表示一个大通孔1351部位的连接被腐蚀而失效),则满足/> As shown in FIG. 4 , taking three large through holes 1351 as an example, in the related art, the total resistance of the first routing line 121 and the second routing line 161 is Rtotal , the resistance of the line segment of the first routing line 121 between two adjacent large through holes 1351 is R, and the resistance of the line segment of the second routing line 161 between two adjacent large through holes 1351 is also R, then As shown in FIG5 , when one of the connection parts of the three large through holes 1351 is corroded (the cross in FIG5 indicates that the connection part of a large through hole 1351 is corroded and fails), then it satisfies/>
如图7所示,以3个第二过孔151和3个第一过孔131为例,在连接部位失效之前,如图8所示,当3个第二过孔151中一个连接部位被腐蚀(图8中叉号表示一个第二过孔151部位的连接被腐蚀而失效),则满足/> As shown in FIG. 7 , taking three second vias 151 and three first vias 131 as an example, before the connection part fails, As shown in FIG8 , when one of the connection parts of the three second via holes 151 is corroded (the cross in FIG8 indicates that the connection of one of the second via holes 151 is corroded and fails), then the condition is satisfied.
因此,在发生腐蚀而失效之前,图4中相关技术的R总为图7示例1.5倍,因此本申请实施例减小了第一走线121和第二走线161的总电阻。在发生腐蚀而失效之后,相比于图5中相关技术,图8示例中还可以通过发生腐蚀的第二过孔151之外的第二过孔151和多个第一过孔131传递电信号,使得图8示例中第一走线121和第二走线161的总电阻也更小。因此本申请,不但减小了发生腐蚀失效之前的第一走线121和第二走线161的总电阻,也减小了发生腐蚀失效之后的第一走线121和第二走线161的总电阻。Therefore, before corrosion occurs and fails, the total R of the related art in FIG4 is 1.5 times that of the example in FIG7, so the embodiment of the present application reduces the total resistance of the first routing 121 and the second routing 161. After corrosion occurs and fails, compared with the related art in FIG5, in the example in FIG8, the electrical signal can also be transmitted through the second via 151 other than the corroded second via 151 and the plurality of first vias 131, so that the total resistance of the first routing 121 and the second routing 161 in the example in FIG8 is also smaller. Therefore, the present application not only reduces the total resistance of the first routing 121 and the second routing 161 before corrosion failure occurs, but also reduces the total resistance of the first routing 121 and the second routing 161 after corrosion failure occurs.
此外,当某一第二过孔151部位发生腐蚀时,由于第二金属层14包括比第三金属层16的耐腐蚀性高的材料,第二金属层14可以阻挡腐蚀进一步延伸至第一走线121上,从而确保了多个第一过孔131的正常连接。In addition, when corrosion occurs at a certain second via 151 , since the second metal layer 14 includes a material with higher corrosion resistance than the third metal layer 16 , the second metal layer 14 can prevent the corrosion from further extending to the first trace 121 , thereby ensuring normal connection of multiple first vias 131 .
在本申请中,增加设置了连接走线141,第二走线161通过第二过孔151与连接走线141连接,连接走线141通过第一过孔131与第一走线121连接,使得第二走线161通过连接走线141、第二过孔151和第一过孔131与第一走线121连接,第一方面,不但减小了发生腐蚀失效之前的第一走线121和第二走线161的总电阻,也减小了发生腐蚀失效之后的第一走线121和第二走线161的总电阻。第二方面,由于第二金属层14包括比第三金属层16的耐腐蚀性高的材料,第二金属层14可以阻挡腐蚀进一步延伸至第一走线121上,从而确保了多个第一过孔131的正常连接。第三方面,当某一第二过孔151发生腐蚀时,通过发生腐蚀的第二过孔151之外的第二过孔151和多个第一过孔131传递电信号,又进一步确保了可以减小发生腐蚀失效之后的第一走线121和第二走线161的总电阻。第四方面,在相关技术中,第三金属层16或第二走线161自身没来得及发生腐蚀,但水汽等透过第二走线161达到第一走线121,使得第一走线121发生了腐蚀,因此,在本申请实施例中的第二金属层14或连接走线141阻挡了水汽到达第一走线121的路径,确保第一走线121不会被腐蚀。In the present application, a connecting line 141 is added, and the second line 161 is connected to the connecting line 141 through the second via 151, and the connecting line 141 is connected to the first line 121 through the first via 131, so that the second line 161 is connected to the first line 121 through the connecting line 141, the second via 151 and the first via 131. On the first hand, not only the total resistance of the first line 121 and the second line 161 before the corrosion failure is reduced, but also the total resistance of the first line 121 and the second line 161 after the corrosion failure is reduced. On the second hand, since the second metal layer 14 includes a material with higher corrosion resistance than the third metal layer 16, the second metal layer 14 can prevent corrosion from further extending to the first line 121, thereby ensuring the normal connection of multiple first vias 131. On the third aspect, when a second via hole 151 corrodes, the electrical signal is transmitted through the second via holes 151 other than the corroded second via hole 151 and the plurality of first via holes 131, which further ensures that the total resistance of the first routing line 121 and the second routing line 161 after the corrosion failure can be reduced. On the fourth aspect, in the related art, the third metal layer 16 or the second routing line 161 itself does not have time to corrode, but water vapor reaches the first routing line 121 through the second routing line 161, causing the first routing line 121 to corrode. Therefore, in the embodiment of the present application, the second metal layer 14 or the connecting routing line 141 blocks the path of water vapor to the first routing line 121, ensuring that the first routing line 121 will not be corroded.
在一些实施例中,第二金属层14包括至少两层金属子层,第二金属层14的至少一金属子层比第三金属层16的耐腐蚀性高。In some embodiments, the second metal layer 14 includes at least two metal sub-layers, and at least one metal sub-layer of the second metal layer 14 has higher corrosion resistance than the third metal layer 16 .
示例地,第二金属层14包括至少两层金属子层,只要有一层金属子层比第三金属层16的耐腐蚀性高,就可以阻挡腐蚀进一步延伸至第一走线121上,从而确保了多个第一过孔131的正常连接。例如,第二金属层14为钛/铝/钛的叠层结构。For example, the second metal layer 14 includes at least two metal sub-layers. As long as one metal sub-layer has higher corrosion resistance than the third metal layer 16, the corrosion can be prevented from further extending to the first trace 121, thereby ensuring the normal connection of the plurality of first vias 131. For example, the second metal layer 14 is a stacked structure of titanium/aluminum/titanium.
在另外一些实施例情况中,第二金属层14包括多种混合材料的一个子金属层,此时第二金属层14包括比第三金属层16的耐腐蚀性高的材料或元素,也可以阻挡腐蚀进一步延伸至第一走线121上,从而确保了多个第一过孔131的正常连接。In some other embodiments, the second metal layer 14 includes a sub-metal layer of multiple mixed materials. In this case, the second metal layer 14 includes a material or element with higher corrosion resistance than the third metal layer 16, and can also prevent corrosion from further extending to the first trace 121, thereby ensuring the normal connection of the multiple first vias 131.
在一些实施例中,第二金属层14的材料包括钛、铬、镍中至少一种。In some embodiments, the material of the second metal layer 14 includes at least one of titanium, chromium, and nickel.
在一些实施例中,第三金属层16的材料包括透明导电金属氧化物、铜、铝中至少一种。In some embodiments, the material of the third metal layer 16 includes at least one of transparent conductive metal oxide, copper, and aluminum.
示例的,明导电金属氧化物可以为氧化铟锡(ITO)。For example, the bright conductive metal oxide may be indium tin oxide (ITO).
一方面,透明导电金属氧化物、铜、铝这些材料容易在水汽环境中发生腐蚀;另一方面,透明导电金属氧化物、铜、铝这些材料致密度不够,对水、气体隔绝能力不够,水气会透过这些材料的膜层对过孔下面的金属膜层进行腐蚀。On the one hand, transparent conductive metal oxides, copper, and aluminum are prone to corrosion in water vapor environments; on the other hand, transparent conductive metal oxides, copper, and aluminum are not dense enough and have insufficient water and gas isolation capabilities. Water vapor will penetrate the film layers of these materials and corrode the metal film layer under the vias.
钛、铬、镍这些材料自身不但具有很好的耐腐蚀性,而且水汽不能透过这些材料进入下面的金属膜层,避免了腐蚀问题的发生。Materials such as titanium, chromium, and nickel not only have excellent corrosion resistance, but also water vapor cannot penetrate these materials into the metal film layer below, thus avoiding the occurrence of corrosion problems.
请参阅图11至图16,图11为本申请实施例提供的第二种阵列基板的C-C虚线处或方向的截面示意图;图12为本申请实施例提供的第二种阵列基板的等效电路中部分过孔失效的示意图;图13为本申请实施例提供的第三种阵列基板的C-C虚线处或方向的截面示意图;图14为本申请实施例提供的第三种阵列基板的等效电路中部分过孔失效的示意图;图15为本申请实施例提供的第四种阵列基板的C-C虚线处或方向的截面示意图;图16为本申请实施例提供的第四种阵列基板的等效电路中部分过孔失效的示意图。Please refer to Figures 11 to 16, Figure 11 is a cross-sectional schematic diagram of the second array substrate provided in an embodiment of the present application at the C-C dotted line or in the direction; Figure 12 is a schematic diagram of the failure of some vias in the equivalent circuit of the second array substrate provided in an embodiment of the present application; Figure 13 is a cross-sectional schematic diagram of the third array substrate provided in an embodiment of the present application at the C-C dotted line or in the direction; Figure 14 is a schematic diagram of the failure of some vias in the equivalent circuit of the third array substrate provided in an embodiment of the present application; Figure 15 is a cross-sectional schematic diagram of the fourth array substrate provided in an embodiment of the present application at the C-C dotted line or in the direction; Figure 16 is a schematic diagram of the failure of some vias in the equivalent circuit of the fourth array substrate provided in an embodiment of the present application.
需要说明的是,图7、图11、图13、图15均为图6中C-C虚线处或方向的截面示意图,虽然图13和图15与图6中过孔数量不对应,这是因为图6中未示意,或图13和图15示意了多个过孔。It should be noted that Figures 7, 11, 13 and 15 are all cross-sectional schematic diagrams at or in the direction of the C-C dotted line in Figure 6. Although the number of vias in Figures 13 and 15 does not correspond to that in Figure 6, this is because Figure 6 does not illustrate it, or Figures 13 and 15 illustrate multiple vias.
在一些实施例中,第一绝缘层13包括多个第一过孔131,第二绝缘层15包括多个第二过孔151;其中,在垂直于基底11所在平面的方向上,至少部分第二过孔151与对应的第一过孔131重叠设置,或/和至少部分第二过孔151与第一过孔131错位设置。In some embodiments, the first insulating layer 13 includes a plurality of first vias 131, and the second insulating layer 15 includes a plurality of second vias 151; wherein, in a direction perpendicular to the plane of the substrate 11, at least some of the second vias 151 overlap with the corresponding first vias 131, or/and at least some of the second vias 151 are staggered with the first vias 131.
示例地,在垂直于基底11所在平面的方向上,至少部分第二过孔151与对应的第一过孔131重叠设置。For example, in a direction perpendicular to the plane where the substrate 11 is located, at least a portion of the second via holes 151 is overlapped with the corresponding first via holes 131 .
在另外一些示例中,至少部分第二过孔151与第一过孔131错位设置。In some other examples, at least a portion of the second via holes 151 and the first via holes 131 are offset from each other.
在一些实施例中,如图7和图11所示,第一过孔131的数量与第二过孔151的数量相同。图7和图11示例了,在垂直于基底11所在平面的方向上,多个第二过孔151与多个第一过孔131均错位设置或均重叠设置。In some embodiments, as shown in Figures 7 and 11, the number of first vias 131 is the same as the number of second vias 151. Figures 7 and 11 illustrate that in a direction perpendicular to the plane where the substrate 11 is located, the plurality of second vias 151 and the plurality of first vias 131 are staggered or overlapped.
在图7示例中,第一过孔131的数量与第二过孔151的数量相同;在垂直于基底11所在平面的方向上,多个第二过孔151与多个第一过孔131均重叠设置。使得在第二过孔151和第一过孔131部位,金属层或导电层的材料厚度非常大,增强了抵御水汽透过的能力和抵御水汽腐蚀的能力。In the example of FIG. 7 , the number of the first via holes 131 is the same as the number of the second via holes 151; in a direction perpendicular to the plane where the substrate 11 is located, the plurality of second via holes 151 and the plurality of first via holes 131 are overlapped, so that the material thickness of the metal layer or the conductive layer is very large at the second via holes 151 and the first via holes 131, thereby enhancing the ability to resist water vapor penetration and water vapor corrosion.
在图11示例中,第一过孔131的数量与第二过孔151的数量相同;在垂直于基底11所在平面的方向上,多个第二过孔151与多个第一过孔131均错位设置,如图11和图12所示,当一第二过孔151部位发生腐蚀时,由于与发生腐蚀相邻的第一过孔131部位被第二绝缘层13覆盖,第二绝缘层13具有良好的水汽阻隔作用,第二绝缘层13保护了第一过孔131部位,可以避免水汽达到第一过孔131部位。In the example of FIG11 , the number of the first via holes 131 is the same as the number of the second via holes 151; in a direction perpendicular to the plane of the substrate 11, the plurality of second via holes 151 and the plurality of first via holes 131 are staggered, as shown in FIGS. 11 and 12 . When corrosion occurs at a second via hole 151 , since the first via hole 131 adjacent to the corrosion is covered by the second insulating layer 13 , the second insulating layer 13 has a good water vapor barrier effect, and the second insulating layer 13 protects the first via hole 131 , thereby preventing water vapor from reaching the first via hole 131 .
进一步地,第二绝缘层16的材料采用无机材料,可以更好的将水汽阻隔。Furthermore, the second insulating layer 16 is made of inorganic material, which can better block water vapor.
需要说明的是,在本申请中,在垂直于基底11所在平面的方向上,两个结构重叠设置是指两个结构在基底11上的正投影至少部分重叠,例如,在垂直于基底11所在平面的方向上,第二过孔151与第一过孔131重叠设置,是指第二过孔151(可以是指第二过孔151的边缘包括的区域)在基底11上的正投影与第一过孔131(可以是指第一过孔131的边缘包括的区域)在基底11上的正投影至少部分重叠。It should be noted that, in the present application, in a direction perpendicular to the plane where the substrate 11 is located, the overlapping arrangement of two structures means that the orthographic projections of the two structures on the substrate 11 at least partially overlap. For example, in a direction perpendicular to the plane where the substrate 11 is located, the second via 151 and the first via 131 are overlapped, which means that the orthographic projection of the second via 151 (which may refer to the area included by the edge of the second via 151) on the substrate 11 at least partially overlaps with the orthographic projection of the first via 131 (which may refer to the area included by the edge of the first via 131) on the substrate 11.
需要说明的是,在本申请中,在垂直于基底11所在平面的方向上,两个结构错位设置是指两个结构在基底11上的正投影不重叠,例如,在垂直于基底11所在平面的方向上,第二过孔151与第一过孔131错位设置,是指第二过孔151(可以是指第二过孔151的边缘包括的区域)在基底11上的正投影与第一过孔131(可以是指第一过孔131的边缘包括的区域)在基底11上的正投影不重叠。It should be noted that, in the present application, in the direction perpendicular to the plane where the substrate 11 is located, the staggered arrangement of two structures means that the orthographic projections of the two structures on the substrate 11 do not overlap. For example, in the direction perpendicular to the plane where the substrate 11 is located, the second via 151 and the first via 131 are staggered, which means that the orthographic projection of the second via 151 (which may refer to the area included by the edge of the second via 151) on the substrate 11 does not overlap with the orthographic projection of the first via 131 (which may refer to the area included by the edge of the first via 131) on the substrate 11.
在一些实施例中,如图13所示,第一过孔131的数量小于第二过孔151的数量;在垂直于基底11所在平面的方向上,第一过孔131均与对应的第二过孔151重叠设置,部分第二过孔151与第一过孔131错位设置。In some embodiments, as shown in FIG. 13 , the number of first vias 131 is less than the number of second vias 151 ; in a direction perpendicular to the plane of the substrate 11 , the first vias 131 are overlapped with the corresponding second vias 151 , and some of the second vias 151 are staggered with the first vias 131 .
如图13和图14所示,第二过孔151包括与第一过孔131的数量相同的第一子过孔1511,以及至少一个第二子过孔1512,在第一方向Y上,第一子过孔1511与对应的第一过孔131重叠设置,第二子过孔1512与第一过孔131均错位设置。As shown in Figures 13 and 14, the second via 151 includes the same number of first sub-vias 1511 as the first via 131, and at least one second sub-via 1512. In the first direction Y, the first sub-vias 1511 are overlapped with the corresponding first vias 131, and the second sub-vias 1512 and the first vias 131 are staggered.
如图13和图14所示,当一第一子过孔1511发生腐蚀时,可以通过与之相邻的第二子过孔1512继续连接或传递信号,使得发生腐蚀失效后的第一走线121和第二走线161的总电阻不变,或使得发生腐蚀失效后的第一走线121和第二走线161的总电阻增大的更小。As shown in Figures 13 and 14, when a first sub-via 1511 is corroded, the signal can continue to be connected or transmitted through the second sub-via 1512 adjacent thereto, so that the total resistance of the first routing 121 and the second routing 161 after the corrosion failure remains unchanged, or the total resistance of the first routing 121 and the second routing 161 after the corrosion failure increases less.
在一些实施例中,如图15所示,第一过孔131的数量大于第二过孔151的数量的数量;在垂直于基底11所在平面的方向上,第二过孔151均与对应的第一过孔131重叠设置,部分第一过孔131与第二过孔151错位设置。In some embodiments, as shown in FIG. 15 , the number of first vias 131 is greater than the number of second vias 151 ; in a direction perpendicular to the plane of the substrate 11 , the second vias 151 are overlapped with the corresponding first vias 131 , and some of the first vias 131 and the second vias 151 are staggered.
如图15和图16所示,第一过孔131包括与第二过孔151的数量相同的第三子过孔1311,以及至少一个第四子过孔1312,在第一方向Y上,第三子过孔1311与对应的第二过孔151重叠设置,第四子过孔1312与第二过孔151均错位设置。As shown in Figures 15 and 16, the first via 131 includes the same number of third sub-vias 1311 as the second via 151, and at least one fourth sub-via 1312. In the first direction Y, the third sub-vias 1311 are overlapped with the corresponding second vias 151, and the fourth sub-vias 1312 and the second vias 151 are staggered.
如图15和图16所示,当发生严重腐蚀时,一第二过孔151和对应的第三子过孔1311发生腐蚀时,可以通过与之相邻的第四子过孔1312继续连接或传递信号,使得发生腐蚀失效后的第一走线121和第二走线161的总电阻增大的更小。As shown in Figures 15 and 16, when severe corrosion occurs, when a second via 151 and a corresponding third sub-via 1311 are corroded, the signal can continue to be connected or transmitted through the fourth sub-via 1312 adjacent thereto, so that the total resistance of the first routing 121 and the second routing 161 after corrosion failure increases less.
在一些实施例中,连接走线141的延伸方向与第一走线121的延伸方向一致,一连接走线141对应多个第一过孔131。In some embodiments, the extending direction of the connection trace 141 is consistent with the extending direction of the first trace 121 , and one connection trace 141 corresponds to a plurality of first vias 131 .
在另外一些实施例中,连接走线141呈块状、岛状,一个连接走线对应至少3个第一通孔131和至少3个第二通孔151,以达到防止腐蚀和减小电阻的效果。In some other embodiments, the connection traces 141 are block-shaped or island-shaped, and one connection trace corresponds to at least three first through holes 131 and at least three second through holes 151, so as to prevent corrosion and reduce resistance.
在一些实施例中,阵列基板100包括多个薄膜晶体管,以及像素电极和公共电极中至少一个;In some embodiments, the array substrate 100 includes a plurality of thin film transistors, and at least one of a pixel electrode and a common electrode;
第一金属层12还包括薄膜晶体管的栅极;The first metal layer 12 also includes a gate of the thin film transistor;
第一绝缘层13为栅极绝缘层;The first insulating layer 13 is a gate insulating layer;
第二金属层14还包括薄膜晶体管的源极和漏极;The second metal layer 14 also includes the source and drain of the thin film transistor;
第三金属层16还包括像素电极或公共电极。The third metal layer 16 also includes a pixel electrode or a common electrode.
示例地,阵列基板100包括多个薄膜晶体管,像素电极和公共电极用于驱动液晶分子转动而显示图像。阵列基板100包括像素电极,或阵列基板100包括像素电极和公共电极,像素电极与对应的薄膜晶体管电连接。For example, the array substrate 100 includes a plurality of thin film transistors, and the pixel electrodes and the common electrodes are used to drive the liquid crystal molecules to rotate and display images. The array substrate 100 includes the pixel electrodes, or the array substrate 100 includes the pixel electrodes and the common electrodes, and the pixel electrodes are electrically connected to the corresponding thin film transistors.
示例地,第一金属层12同时形成了第一走线121和薄膜晶体管的栅极,第一走线121和薄膜晶体管的栅极同层同材料设置。第二金属层14同时形成了连接走线141和薄膜晶体管的源极、漏极,连接走线141和薄膜晶体管的源极、漏极同层同材料设置。第三金属层16同时形成了第二走线161和像素电极,第二走线161和像素电极同层同材料设置,或者,第三金属层16同时形成了第二走线161和公共电极,第二走线161和公共电极同层同材料设置。通过第一走线、第一绝缘层、连接走线141、第二绝缘层15和第二走线151与阵列的多种功能层或功能布线同层设置,减小了阵列基板100的制造工艺步骤,同时第一走线、连接走线141和第二走线151也能很好的提供阵列基板100中的各种功能的电信号。For example, the first metal layer 12 simultaneously forms the first wiring 121 and the gate of the thin film transistor, and the first wiring 121 and the gate of the thin film transistor are arranged in the same layer and the same material. The second metal layer 14 simultaneously forms the connecting wiring 141 and the source and drain of the thin film transistor, and the connecting wiring 141 and the source and drain of the thin film transistor are arranged in the same layer and the same material. The third metal layer 16 simultaneously forms the second wiring 161 and the pixel electrode, and the second wiring 161 and the pixel electrode are arranged in the same layer and the same material, or the third metal layer 16 simultaneously forms the second wiring 161 and the common electrode, and the second wiring 161 and the common electrode are arranged in the same layer and the same material. By arranging the first wiring, the first insulating layer, the connecting wiring 141, the second insulating layer 15 and the second wiring 151 in the same layer with the various functional layers or functional wiring of the array, the manufacturing process steps of the array substrate 100 are reduced, and the first wiring, the connecting wiring 141 and the second wiring 151 can also well provide electrical signals of various functions in the array substrate 100.
在一些实施例中,阵列基板100包括显示区和位于显示区周围的非显示区,第一走线121、连接走线141和第二走线161均位于非显示区。In some embodiments, the array substrate 100 includes a display area and a non-display area surrounding the display area, and the first wiring 121 , the connecting wiring 141 , and the second wiring 161 are all located in the non-display area.
示例地,在非显示区,第二走线161等更容易接触水汽,在非显示区发生腐蚀的问题更严重,上述实施例的设置位于非显示区,可以极大的提升显示面板的性能和良率。For example, in the non-display area, the second wiring 161 and the like are more easily exposed to water vapor, and the corrosion problem in the non-display area is more serious. The above-mentioned embodiment is arranged in the non-display area, which can greatly improve the performance and yield of the display panel.
示例地,第一走线121、连接走线141和第二走线161可以用于提供栅极驱动电路的时钟信号、栅极驱动电路的起始信号、显示区公共电极的公共信号等。For example, the first wiring 121 , the connecting wiring 141 , and the second wiring 161 may be used to provide a clock signal of a gate driving circuit, a start signal of a gate driving circuit, a common signal of a common electrode in a display area, and the like.
在本申请中,还提供了一种阵列基板的制造方法,上述中任一项的阵列基板100均可以采用该阵列基板的制造方法制造而成,阵列基板的制造方法包括步骤:S10、S20、S30、S40、S50和S60。In the present application, a method for manufacturing an array substrate is also provided. Any of the above array substrates 100 can be manufactured using the method for manufacturing the array substrate. The method for manufacturing the array substrate includes steps: S10, S20, S30, S40, S50 and S60.
S10,提供一基底11。S10, providing a substrate 11.
S20,在基底11上形成第一金属层12,第一金属层12图案化形成至少一条第一走线121。S20 , forming a first metal layer 12 on the substrate 11 , and patterning the first metal layer 12 to form at least one first wiring 121 .
S30,在第一金属层12上形成第一绝缘层13,第一绝缘层13图案化形成至少一个第一过孔131。S30 , forming a first insulating layer 13 on the first metal layer 12 , and patterning the first insulating layer 13 to form at least one first via hole 131 .
S40,在第一绝缘层13上形成第二金属层14,第二金属层14图案化形成至少一条连接走线141,连接走线141通过第一过孔131连接对应的第一走线121。S40 , forming a second metal layer 14 on the first insulating layer 13 , patterning the second metal layer 14 to form at least one connecting wire 141 , and connecting wire 141 is connected to the corresponding first wire 121 through the first via 131 .
S50,在第二金属层14上形成第二绝缘层15,第二绝缘层15图案化形成至少一个第二过孔151。S50 , forming a second insulating layer 15 on the second metal layer 14 , and patterning the second insulating layer 15 to form at least one second via hole 151 .
S60,在第二绝缘层15上形成第三金属层16,第三金属层16图案化形成至少一条第二走线161,第二走线161通过第二过孔151连接对应的连接走线141。S60 , forming a third metal layer 16 on the second insulating layer 15 , and patterning the third metal layer 16 to form at least one second wiring 161 , and the second wiring 161 is connected to the corresponding connecting wiring 141 through the second via 151 .
本申请还提供了一种显示面板,显示面板包括上述中任一项的阵列基板100。The present application also provides a display panel, which includes the array substrate 100 of any one of the above items.
示例地,显示面板可以为液晶显示面板,但不限于此。By way of example, the display panel may be a liquid crystal display panel, but is not limited thereto.
示例地,当显示面板为液晶显示面板时,显示面板还可以包括与阵列基板100相对设置的彩膜基板,显示面板还包括设置于彩膜基板与阵列基板100之间的液晶层。For example, when the display panel is a liquid crystal display panel, the display panel may further include a color filter substrate disposed opposite to the array substrate 100 , and the display panel may further include a liquid crystal layer disposed between the color filter substrate and the array substrate 100 .
需要说明的是,在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详细描述的部分,可以参见其它实施例的相关描述。It should be noted that in the above embodiments, the description of each embodiment has its own emphasis, and for parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
以上实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述实施例对本申请进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.
尽管已描述了本说明书的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例作出另外的变更和修改。所以,所附权利要求意欲解释为包括优选实施例以及落入本说明书范围的所有变更和修改。Although the preferred embodiments of this specification have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of this specification.
显然,本领域的技术人员可以对本说明书进行各种改动和变型而不脱离本说明书的精神和范围。这样,倘若本说明书的这些修改和变型属于本说明书权利要求及其等同技术的范围之内,则本说明书也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if these modifications and variations of this specification fall within the scope of the claims of this specification and their equivalents, this specification is also intended to include these modifications and variations.
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