CN117956695A - Preparation method of semiconductor circuit and method for preparing element by using same - Google Patents
Preparation method of semiconductor circuit and method for preparing element by using same Download PDFInfo
- Publication number
- CN117956695A CN117956695A CN202311624192.9A CN202311624192A CN117956695A CN 117956695 A CN117956695 A CN 117956695A CN 202311624192 A CN202311624192 A CN 202311624192A CN 117956695 A CN117956695 A CN 117956695A
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- China
- Prior art keywords
- carrier
- graphene
- layer
- copper foil
- circuit
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 73
- 239000010410 layer Substances 0.000 claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000011889 copper foil Substances 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 35
- 235000012431 wafers Nutrition 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 18
- 239000003292 glue Substances 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000003825 pressing Methods 0.000 claims abstract description 10
- 238000005507 spraying Methods 0.000 claims abstract description 8
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- 239000000047 product Substances 0.000 claims description 15
- 239000011265 semifinished product Substances 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 238000007664 blowing Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a preparation method of a semiconductor circuit and a method for preparing an element by using the same, wherein the preparation method comprises the following steps: selecting a high-heat-conductivity insulating material to manufacture a carrier; pressing copper foil wafers at preset positions of the carrier to form a copper foil layer; coating a glue layer on a circuit area of the carrier, wherein the circuit area is positioned outside an area of the copper foil wafer; spraying graphene powder on a carrier; solidifying the carrier to enable the graphene powder to form a graphene circuit layer; coating a protective layer on a graphene circuit layer of the carrier; carrying out high-temperature curing on the carrier to obtain a graphene circuit board finished product; the invention aims to provide a preparation method of a semiconductor circuit and a method for preparing an element by using the same, wherein a copper foil layer is formed by processing a region where components are required to be welded or metal wires are required to be bound, and the components can be welded or the metal wires can be bound during welding.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a preparation method of a semiconductor circuit and a method for preparing an element by using the same.
Background
The semiconductor circuit, namely the modularized intelligent power system MIPS integrates a power switch device and a driving circuit, and is also internally provided with fault detection circuits such as overvoltage, overcurrent, overheat and the like, and can send detection signals to a CPU or a DSP for interrupt processing. The semiconductor circuit generally uses an IGBT as a power switching element, and incorporates an integrated structure of a current sensor and a driving circuit.
In the existing semiconductor circuit preparation process, due to the characteristics of graphene, solder paste cannot be welded with a graphene circuit, so that the graphene circuit cannot realize welding work of components according to the existing solder paste welding mode, and cannot connect the components in a mode of binding metal wires, particularly micron-level fine wires, and connection work cannot be realized basically.
Disclosure of Invention
The invention aims to provide a preparation method of a semiconductor circuit and a method for preparing an element by using the same, wherein a copper foil layer is formed by processing a region where a component is required to be welded or a metal wire is required to be bound, and the component can be welded or the metal wire can be bound during welding.
To achieve the purpose, the invention adopts the following technical scheme: a method of fabricating a semiconductor circuit comprising the steps of:
Selecting a high-heat-conductivity insulating material to manufacture a carrier;
Pressing copper foil wafers at preset positions of the carrier to form a copper foil layer;
coating a glue layer on a circuit area of the carrier, wherein the circuit area is positioned outside an area of the copper foil wafer;
Spraying graphene powder on a carrier;
Solidifying the carrier to enable the graphene powder to form a graphene circuit layer;
coating a protective layer on a graphene circuit layer of the carrier;
and (3) carrying out high-temperature curing on the carrier to obtain a finished graphene circuit board product.
Preferably, when the copper foil wafer is pressed, the pressing temperature is set at 100-300 ℃, and the pressing force is set at 10-100 Mpa; the thickness of the copper foil wafer is 50 to 800um.
Preferably, the thickness of the glue layer is 100 to 500um when the glue layer is applied.
Preferably, when the graphene powder is sprayed, the particle diameter of the graphene powder is 1-100um.
Preferably, when the graphene powder is sprayed, the method further comprises the steps of blowing and sucking the carrier, and the method is used for removing the graphene powder in the areas of the non-adhesive layers; the power of the air blowing is 150-550W; the power of the absorption is 1000-7500W.
Preferably, the protective layer is a liquid photo solder resist, and the thickness of the protective layer is 10-500um.
A method of making a component comprising the steps of:
selecting a metal material as a radiating fin, and plating silver on the radiating fin;
welding the graphene circuit board finished product and the radiating fin to form a component semi-finished product;
coating an adhesive material on a circuit area of a graphene circuit board finished product, placing an electronic device on the adhesive material, and then binding wires and solidifying;
Selecting a metal material as a pin, connecting one end of the pin with a semi-finished product of the component, and suspending the other end of the pin;
And carrying out injection molding packaging on one end of the pin and the semi-finished product of the component to finish the preparation work.
Preferably, the method specifically comprises the following steps: and (3) carrying out plating treatment on the copper foil layer of the graphene circuit board finished product to form a metal connecting structure, and welding one end of the pin with the metal connecting structure.
Preferably, the method specifically comprises spraying and ultrasonic cleaning of the semi-finished product of the component.
The technical scheme of the invention has the beneficial effects that: the copper foil layer is formed in the area where the components are required to be welded or the metal wires are required to be bound, so that the graphene powder cannot cover the area, the graphene circuit layer cannot be formed, the components can be welded or the metal wires can be bound in the area of the copper foil layer during subsequent welding work, and the problem that the graphene plate cannot be welded with solder paste or the metal wires can be bound is solved.
Drawings
FIG. 1 is a schematic view of a semiconductor circuit insulating substrate laminated copper foil wafer according to one embodiment of the present invention;
FIG. 2 is a schematic view of a large plate of a semiconductor circuit insulating substrate laminated copper foil wafer in accordance with one embodiment of the present invention;
FIG. 3 is a schematic diagram of a semiconductor circuit insulating substrate coated with a glue layer according to one embodiment of the present invention;
FIG. 4 is a schematic view of a large plate coated with a glue layer on a semiconductor circuit insulating substrate in accordance with one embodiment of the present invention;
FIG. 5 is a schematic diagram of a semiconductor circuit insulating substrate sprayed with graphene powder according to one embodiment of the present invention;
FIG. 6 is a schematic diagram of a large plate of graphene powder sprayed on a semiconductor circuit insulating substrate according to one embodiment of the present invention;
FIG. 7 is a schematic view of a semiconductor circuit insulating substrate coated with a protective layer according to one embodiment of the present invention;
fig. 8 is a schematic view of a large board of a semiconductor circuit insulating substrate overcoated with a protective layer according to one embodiment of the invention.
Wherein: carrier 1, glue layer 2, graphene circuit layer 3, protective layer 4, technology limit 5, copper foil layer 01.
Detailed Description
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
Embodiments of the present invention are described in detail below. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
The specific meaning of the terms of the present embodiment in the present invention will be understood in detail by those skilled in the art.
Referring to fig. 1 to 8, a method for manufacturing a semiconductor circuit includes the steps of:
Selecting a high-heat-conductivity insulating material to manufacture a carrier 1; the high heat conduction insulating material refers to an insulating material with high heat conductivity, such as ceramics and the like;
Pressing copper foil wafers at preset positions of the carrier 1 to form a copper foil layer; the preset position refers to an area where the internal circuit of the semiconductor circuit needs to be soldered with a component or a metal wire needs to be bound;
Coating a glue layer 2 on a circuit area of the carrier 1, wherein the circuit area is positioned outside an area of the copper foil wafer;
Spraying graphene powder on the carrier 1;
solidifying the carrier 1 to enable the graphene powder to form a graphene circuit layer 3;
Coating a protective layer 4 on the graphene circuit layer 3 of the carrier 1;
and (3) carrying out high-temperature curing on the carrier 1 to obtain a graphene circuit board finished product.
Firstly, a copper foil layer is formed by laminating a copper foil wafer on a carrier 1, the copper foil layer is used as a region for subsequent welding of components, then a glue layer 2 is coated on a circuit region on the periphery of the copper foil layer, graphene powder is conveniently fixed, the graphene powder is sprayed on the carrier 1 in a spraying mode, a layer of graphene powder is adhered to the region with the glue layer 2, the graphene powder cannot be adhered to the region without the glue layer 2, the graphene powder is recovered after falling off, the glue layer 2 and the graphene powder are solidified through high temperature, a graphene circuit layer 3 is formed on the carrier 1, finally, a protective layer 4 is coated on the graphene circuit layer 3 to play a protective role, and the preparation of a graphene circuit board finished product is completed through high temperature solidification again.
According to the invention, the copper foil layer is formed in the area where the components are required to be welded or the metal wires are required to be bound, so that the graphene powder cannot cover the area, the graphene circuit layer 3 is not formed, the components can be welded or the metal wires can be bound in the area of the copper foil layer during subsequent welding work, and the problem that the graphene plate cannot be welded with solder paste or the metal wires can be solved.
The copper foil layer is used for realizing welding of components in the semiconductor; the base material is made of high-heat-conductivity insulating materials, and plays roles in supporting and radiating the semiconductor internal circuits and devices. A plurality of circuit areas are arranged on a large-size plate in an array mode, copper foil wafers are pressed at preset positions of each circuit area to form a copper foil layer, and therefore processing of a plurality of semiconductor circuits can be completed simultaneously, and production efficiency is improved; the process edge 5 is arranged at the periphery of each circuit area as a reserved safety distance to prevent the damage to the internal circuit during cutting.
Preferably, when the copper foil wafer is pressed, the pressing temperature is set at 100-300 ℃, and the pressing force is set at 10-100 Mpa; the thickness of the copper foil wafer is 50 to 800um.
The temperature and the force of the pressing are set, so that the pressing effect can be ensured, the copper foil wafer can be firmly fixed on the carrier 1, and the problems of falling off or dislocation and the like during welding are avoided. The thickness of the copper foil wafer is 50-800 um, the welding performance is good, the eutectic liquid is formed through the high-temperature copper foil wafer, the chemical metallurgical bonding of the copper foil wafer and the ceramic carrier 1 is realized, and the lamination of the copper foil wafer and the carrier 1 is realized.
Specifically, when the adhesive layer 2 is coated, the thickness of the adhesive layer 2 is 100 to 500um. The insulating adhesive layer 2 is coated on the circuit area of the carrier 1 in a printing or graffiti mode, the thickness of the adhesive layer 2 is 100 to 500 mu m, a proper amount of graphene powder can be ensured to be adhered, and the condition that the thickness of the circuit area is uneven due to too much graphene powder is prevented.
Preferably, when the graphene powder is sprayed, the particle diameter of the graphene powder is 1-100um. The graphene powder adopts particle diameters with proper sizes, can be uniformly and fully adhered on the adhesive layer 2 to form the graphene circuit layer 3 with uniform thickness, and avoids the condition of uneven surface of the plate.
Specifically, when the graphene powder is sprayed, the method further comprises the steps of blowing and sucking the carrier 1, and removing the graphene powder in the area of the non-adhesive layer 2; the power of the air blowing is 150-550W; the power of the absorption is 1000-7500W.
By adopting proper blowing power and absorbing power, the graphene powder in the area of the non-adhesive layer 2 can be removed, the graphene powder adhered on the adhesive layer 2 can not be influenced, and the formation of a complete graphene circuit layer 3 in a circuit area is ensured.
Preferably, the protective layer 4 is a liquid photoresist, and the thickness of the protective layer 4 is 10-500um.
The protective layer 4 is coated on the graphene circuit layer 3, and plays an insulating and protective role on the graphene circuit layer 3.
A method of making a component comprising the steps of:
Selecting a metal material as a radiating fin, and plating silver on the radiating fin; silver plating can improve the heat conduction performance of the radiating fin and can also play a role in rust prevention;
Welding the graphene circuit board finished product and the radiating fin to form a component semi-finished product; welding and fixing one surface of the graphene circuit board finished product, which is not provided with a circuit area, with the radiating fin;
Coating an adhesive material on a circuit area of a graphene circuit board finished product, placing an electronic device on the adhesive material, and then binding wires and solidifying; bonding other electronic devices on one surface of the graphene circuit board finished product with a circuit area, connecting the electronic devices with the circuit area through binding wires, and then solidifying;
Selecting a metal material as a pin, connecting one end of the pin with a semi-finished product of the component, and suspending the other end of the pin; one end of the pin is connected with a circuit of the semi-finished product of the component, and the other end of the pin extends to the outer side of the package to serve as a connecting pin end of the element;
And carrying out injection molding packaging on one end of the pin and the semi-finished product of the component to finish the preparation work.
Specifically, the method specifically comprises the following steps: and (3) carrying out plating treatment on the copper foil layer of the graphene circuit board finished product to form a metal connecting structure, and welding one end of the pin with the metal connecting structure.
The pins are also subjected to plating treatment, so that the copper foil layer is favorably welded with the copper foil layer, and the condition of empty welding between the copper foil layer and the pins is avoided.
Preferably, the method specifically comprises spraying and ultrasonic cleaning of the semi-finished product of the component. And removing pollutants such as soldering flux, aluminum scraps and the like remained on the circuit board.
In the description herein, reference to the term "embodiment," "example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The technical principle of the present invention is described above in connection with the specific embodiments. The description is made for the purpose of illustrating the general principles of the invention and should not be taken in any way as limiting the scope of the invention. Other embodiments of the invention will be apparent to those skilled in the art from consideration of this specification without undue burden.
Claims (9)
1. A method of manufacturing a semiconductor circuit comprising the steps of:
Selecting a high-heat-conductivity insulating material to manufacture a carrier;
Pressing copper foil wafers at preset positions of the carrier to form a copper foil layer;
coating a glue layer on a circuit area of the carrier, wherein the circuit area is positioned outside an area of the copper foil wafer;
Spraying graphene powder on a carrier;
Solidifying the carrier to enable the graphene powder to form a graphene circuit layer;
coating a protective layer on a graphene circuit layer of the carrier;
and (3) carrying out high-temperature curing on the carrier to obtain a finished graphene circuit board product.
2. The method of manufacturing a semiconductor circuit according to claim 1, wherein when the copper foil wafer is laminated, the laminating temperature is set at 100 to 300 degrees celsius, and the laminating strength is set at 10 to 100Mpa; the thickness of the copper foil wafer is 50 to 800um.
3. The method of manufacturing a semiconductor circuit according to claim 1, wherein the thickness of the glue layer is 100 to 500um when the glue layer is applied.
4. The method for manufacturing a semiconductor circuit according to claim 1, wherein the particle diameter of the graphene powder is 1-100um when the graphene powder is sprayed.
5. The method for manufacturing a semiconductor circuit according to claim 1, further comprising blowing and sucking the carrier to remove the graphene powder in the region of the non-adhesive layer when the graphene powder is sprayed; the power of the air blowing is 150-550W; the power of the absorption is 1000-7500W.
6. The method of manufacturing a semiconductor circuit according to claim 1, wherein the protective layer is a liquid photo solder resist, and the protective layer has a thickness of 10 to 500 μm.
7. A method of making a component comprising the steps of:
selecting a metal material as a radiating fin, and plating silver on the radiating fin;
welding the graphene circuit board finished product and the radiating fin to form a component semi-finished product;
coating an adhesive material on a circuit area of a graphene circuit board finished product, placing an electronic device on the adhesive material, and then binding wires and solidifying;
Selecting a metal material as a pin, connecting one end of the pin with a semi-finished product of the component, and suspending the other end of the pin;
And carrying out injection molding packaging on one end of the pin and the semi-finished product of the component to finish the preparation work.
8. A method for producing a component according to claim 7, characterized in that it comprises in particular:
and (3) carrying out plating treatment on the copper foil layer of the graphene circuit board finished product to form a metal connecting structure, and welding one end of the pin with the metal connecting structure.
9. A method of manufacturing a component according to claim 7, characterized in that it comprises in particular spraying and ultrasonic cleaning of the semifinished component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311624192.9A CN117956695A (en) | 2023-11-28 | 2023-11-28 | Preparation method of semiconductor circuit and method for preparing element by using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311624192.9A CN117956695A (en) | 2023-11-28 | 2023-11-28 | Preparation method of semiconductor circuit and method for preparing element by using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117956695A true CN117956695A (en) | 2024-04-30 |
Family
ID=90796901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311624192.9A Pending CN117956695A (en) | 2023-11-28 | 2023-11-28 | Preparation method of semiconductor circuit and method for preparing element by using same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117956695A (en) |
-
2023
- 2023-11-28 CN CN202311624192.9A patent/CN117956695A/en active Pending
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