CN117936515B - Three-dimensional integrated TSV adapter plate containing magnetic resistance current sensing and preparation method - Google Patents
Three-dimensional integrated TSV adapter plate containing magnetic resistance current sensing and preparation method Download PDFInfo
- Publication number
- CN117936515B CN117936515B CN202311696788.XA CN202311696788A CN117936515B CN 117936515 B CN117936515 B CN 117936515B CN 202311696788 A CN202311696788 A CN 202311696788A CN 117936515 B CN117936515 B CN 117936515B
- Authority
- CN
- China
- Prior art keywords
- current sensor
- tsv
- silicon substrate
- inorganic
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 34
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000012544 monitoring process Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 229910002555 FeNi Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 13
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 241000724291 Tobacco streak virus Species 0.000 description 52
- 238000005457 optimization Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention relates to the technical field of integrated circuit packaging, and discloses a three-dimensional integrated TSV adapter plate containing magnetoresistive current sensing and a preparation method thereof, wherein the three-dimensional integrated TSV adapter plate comprises the following components: the semiconductor device comprises a silicon substrate, wherein a first surface of the silicon substrate is provided with an inorganic dielectric layer I, a TSV copper column penetrates through the silicon substrate and the inorganic dielectric layer I, a second surface opposite to the first surface of the silicon substrate is provided with a solder ball, and the solder ball is fixedly connected with the TSV copper column; the magneto-resistance current sensor is fixedly arranged at a preset position on the upper surface of the first inorganic medium layer; the second inorganic dielectric layer is arranged at a non-port of the magnetoresistive current sensor and at a tower joint where the non-TSV copper column of the first inorganic dielectric layer is positioned; the interconnection line is used for connecting the TSV copper columns and the magneto-resistive current sensors together according to a preset circuit connection pattern; and a current wire connected with the magneto-resistance current sensor. The technical scheme provided by the invention realizes the integration of the specific type current sensor on the TSV adapter plate.
Description
Technical Field
The invention relates to the technical field of integrated circuit packaging, in particular to a three-dimensional integrated TSV adapter plate containing magnetoresistive current sensing and a preparation method thereof.
Background
With the continuous improvement of the requirements of the electronic device on performance, portability and integration, the miniaturization development of the electronic device by utilizing the silicon-based advanced packaging integration technology is a necessary trend. Advanced packaging integration technology brings more reliability problems while realizing electronic device size miniaturization and performance improvement, for example, power consumption in the device is increased after power density is improved, so that the device temperature is too high, performance is reduced, meanwhile, when environmental loads such as external high temperature, mechanical impact and vibration are experienced, the internal stress state of the device is more complex, the microstructure in the device is possibly invalid, and the internal voltage and current signals of the device are abnormal. The current is used as key signal characteristics in the electronic device, key physical characteristics such as power, energy efficiency and system state of the system can be reflected, and whether the system is in a normal working state can be judged by monitoring the current signal characteristics.
Current measurement means in the field of microelectronic systems currently mainly include contact measurement and non-contact measurement methods, i.e. current sensors are classified into contact and non-contact types.
The contact type measurement method mainly comprises the following steps: the current signal can be accurately measured by the traditional shunt resistor, the measurement principle and the signal processing circuit are simple, but the shunt circuit is required to be electrically connected with the original circuit, the interference to the original circuit caused by the isolation between the circuit to be measured and the measurement circuit cannot be realized, and other influences are easily caused on the circuit to be measured, so that the current measuring device is difficult to be used in a current measuring scene with isolation requirements.
The non-contact measurement method mainly comprises the following steps: the testing method is electrically isolated from a circuit to be tested without affecting the original circuit function, but the traditional non-contact current sensor is mainly a packaged device, the sensor is usually used as a single device, and cannot be integrated in the device (embedded integration of the sensor cannot be realized) so that the device is huge and low in integration level, and the high-density integration requirement of the device is difficult to meet.
In summary, the conventional measurement means is difficult to obtain the internal key current signal data of the three-dimensional integrated TSV adapter plate, and the internal state of the device cannot be directly estimated.
Disclosure of Invention
The invention provides a three-dimensional integrated TSV adapter plate with magnetic resistance current sensing and a preparation method thereof, wherein a current sensor is prepared at a specific position on the surface of a wafer (silicon substrate) by utilizing a semiconductor process, and the wafer is used for processing the three-dimensional integrated TSV adapter plate, so that the embedded integration of the current sensor is realized in the production and preparation process of the three-dimensional integrated TSV adapter plate, the three-dimensional integrated TSV adapter plate has the capability of measuring internal key current signals, and powerful support is provided for evaluating the internal state of a module device.
The invention is realized by the following technical scheme:
A three-dimensional integrated TSV interposer with magnetoresistive current sensing, comprising:
The semiconductor device comprises a silicon substrate, wherein a first surface of the silicon substrate is provided with an inorganic dielectric layer I, a TSV copper column penetrates through the silicon substrate and the inorganic dielectric layer I, a second surface opposite to the first surface of the silicon substrate is provided with a solder ball, and the solder ball is fixedly connected with the TSV copper column;
The magneto-resistance current sensor is fixedly arranged at a preset position on the upper surface of the first inorganic medium layer;
The second inorganic dielectric layer is arranged at a non-port of the magnetoresistive current sensor and at a tower joint where the non-TSV copper column of the first inorganic dielectric layer is positioned;
And the interconnection lines are used for connecting the TSV copper columns and the magneto-resistive current sensors together according to a preset circuit connection pattern.
As optimization, a functional chip is further arranged at a preset position on the upper surface of the first inorganic medium layer, the second inorganic medium layer is arranged at a non-pin position of the functional chip, the interconnection lines are used for connecting a plurality of TSV copper columns, a magneto-resistance current sensor and pins of the functional chip together according to preset circuit connection patterns, the output pins of the functional chip are further connected with current wires used for key signal transmission of the functional chip, and the magneto-resistance current sensor is used for monitoring current waveforms in the current wires.
As optimization, the second inorganic medium layer positioned on the upper surface of the magnetoresistive current sensor, the second inorganic medium layer positioned on the upper surface of the first inorganic medium layer and the upper surface of the second inorganic medium layer positioned on the upper surface of the functional chip are all positioned on the same horizontal plane.
As an optimization, the first inorganic medium layer is made of silicon nitride or silicon dioxide.
As optimization, the material of the second inorganic medium layer is silicon nitride or silicon dioxide.
As an optimization, the material of the magneto-resistive current sensor is FeNi.
As optimization, an inorganic medium layer I is arranged between the side wall of the TSV copper column and the silicon substrate.
The invention also discloses a preparation method of the three-dimensional integrated TSV adapter plate with the magnetic resistance current sensing, which is used for preparing the three-dimensional integrated TSV adapter plate with the magnetic resistance current sensing and comprises the following steps:
S1, manufacturing a silicon through hole on the upper surface of a silicon substrate through an etching process, depositing an inorganic dielectric layer I in the silicon through hole and on the upper surface of the silicon substrate, sputtering a first metal seed layer on the dielectric layer I in the silicon through hole and on the upper surface of the silicon substrate, filling the silicon through hole with the first seed layer to form a TSV copper column, and removing the first metal seed layer on the upper surface of the silicon substrate;
S2, coating photoresist on the upper surface of the first inorganic medium layer, and carrying out photoetching treatment on the photoresist at a position where a magnetoresistive current sensor needs to be arranged to form a graph related to the magnetoresistive current sensor;
S3, depositing a magnetoresistive current sensor film material on the photoresist and the dielectric layer I on the silicon substrate through magnetron sputtering;
S4, stripping photoresist on the upper surface of the first inorganic medium layer and a thin film material of the magnetoresistive current sensor deposited on the photoresist, and placing the whole silicon substrate in a vacuum magnetic field annealing furnace for annealing treatment, and setting annealing temperature and magnetic field strength according to required conditions to finally form the silicon substrate with the magnetoresistive current sensor fixed on the upper surface of the first inorganic medium layer;
S5, depositing an inorganic medium layer II on the inorganic medium layer I and the upper surface of the magneto-resistance current sensor, etching the inorganic medium layer II at the joint of the port of the magneto-resistance current sensor and the through silicon via to expose the port of the magneto-resistance current sensor, which is interconnected with the through silicon via;
S6, coating photoresist on the upper surfaces of the first inorganic medium layer, the second inorganic medium layer and the magneto-resistive current sensor, carrying out photoetching treatment on the photoresist according to the position of a preset circuit connection pattern to form an interconnection structure pattern according to the preset circuit connection pattern, and then depositing a second metal seed layer on the photoresist, the first inorganic medium layer and the second inorganic medium layer to photoetching the interconnection structure pattern of the device according to the preset circuit connection pattern;
S7, electroplating the area subjected to photoetching, removing photoresist, and then reversely etching the second metal seed layer to form an interconnection line, so that the leading-out end of the magnetoresistive current sensor is connected with the TSV copper column through the interconnection line;
and S8, welding a solder ball at the TSV copper column of one side of the silicon substrate far away from the dielectric layer, so as to realize the external lead-out of the silicon substrate signal.
Preferably, in S1, the first metal seed layer on the upper surface of the silicon substrate is removed, specifically, the first metal seed layer on the upper surface of the silicon substrate is removed by chemical mechanical polishing.
As an optimization, after S4, the functional chip is set at a preset position on the upper surface of the first inorganic medium layer, and S5 further includes: depositing an inorganic medium layer II at a non-pin part of the functional chip; s7, connecting the magneto-resistive current sensor leading-out end, the TSV copper column and the pin of the functional chip according to a preset circuit connection pattern through an interconnection line.
Compared with the prior art, the invention has the following advantages and beneficial effects:
According to the invention, the current sensor is prepared at a specific position on the surface of the wafer by utilizing the semiconductor process, and the wafer is used for processing the three-dimensional integrated TSV adapter plate, so that the embedded integration of the current sensor is completed in the production and preparation process of the three-dimensional integrated TSV adapter plate, the three-dimensional integrated TSV adapter plate has the capability of measuring internal key current signals, and a powerful support is provided for evaluating the internal state of a module device.
The technical scheme provided by the invention realizes the integration of the specific type current sensor on the TSV adapter plate.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
Fig. 1 is a schematic structural diagram of a three-dimensional integrated TSV interposer with magnetoresistive current sensing according to the present invention;
Fig. 2 to fig. 9 are schematic structural diagrams of products prepared by each step of the preparation method of the three-dimensional integrated TSV interposer with magnetoresistive current sensing according to the present invention.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.
Before proceeding with the description of the embodiments, the following description is made:
TSVs are collectively referred to as Through Silicon Via: i.e. through silicon vias.
Magnetoresistive current sensor:
According to the current sensor, based on a magneto-resistance effect, the electron scattering probability inside the magneto-resistance material changes along with the direction and the size of a magnetic field within a certain magnetic field intensity range, so that the resistance value of the magneto-resistance material is influenced. When the relative positions of the key current wiring and the magnetic resistance sensor in the device are fixed, the magnetic field direction is determined, and the resistance of the magnetic resistance material is only related to the magnitude of the internal current. The sensor is generally in a complete configuration, and four identical magneto-resistive units form a Wheatstone bridge to improve the sensitivity and temperature compensation capability of the sensor.
The invention mainly prepares the current sensor at a specific position of a wafer (silicon substrate) by utilizing a semiconductor process, and prepares the three-dimensional integrated TSV adapter plate by utilizing the wafer so as to realize monitoring of key current signals in the three-dimensional integrated TSV adapter plate. Fig. 1 is a schematic diagram of a three-dimensional integrated TSV interposer with magnetoresistive current sensing prepared by the method, which mainly comprises the following components: silicon substrate, TSV, current sensor, current line, interconnection line, dielectric layer 1, dielectric layer 2, solder ball, etc. Specifically, this embodiment 1 provides a three-dimensional integrated TSV interposer including magnetoresistive current sensing, including:
The semiconductor device comprises a silicon substrate, wherein a first surface of the silicon substrate is provided with an inorganic dielectric layer I, a TSV copper column penetrates through the silicon substrate and the inorganic dielectric layer I, a second surface opposite to the first surface of the silicon substrate is provided with a solder ball, and the solder ball is fixedly connected with the TSV copper column; an inorganic medium layer I is arranged between the side wall of the TSV copper column and the silicon substrate;
The magneto-resistance current sensor is fixedly arranged at a preset position on the upper surface of the first inorganic medium layer;
The second inorganic dielectric layer is arranged at a non-port of the magnetoresistive current sensor and at a tower joint where the non-TSV copper column of the first inorganic dielectric layer is positioned;
And the interconnection lines are used for connecting the TSV copper columns and the magneto-resistive current sensors together according to a preset circuit connection pattern.
According to the invention, the current sensor is integrated in the three-dimensional integrated TSV adapter plate through the semiconductor process, the integrated preparation of the current sensor is realized, and a way is provided for monitoring internal key signals of the three-dimensional integrated TSV adapter plate under working and environmental loads.
In this embodiment, a functional chip is further disposed at a preset position on the upper surface of the first inorganic dielectric layer, the second inorganic dielectric layer is disposed at a non-pin position of the functional chip, the interconnection lines respectively connect the plurality of TSV copper columns, the magnetoresistive current sensor, and the pins of the functional chip together according to a preset circuit connection pattern, and the output pins of the functional chip are further connected with current lines for key signal transmission of the functional chip, and the magnetoresistive current sensor is used for monitoring current waveforms in the current lines.
The chips integrated by the TSV adapter plate with the current sensor are all functional chips, so that the TSV adapter plate not only has a normal circuit function, but also has an internal key current signal monitoring function, the functions are more abundant, and the internal key current signal characteristics of the TSV adapter plate can be obtained in a working state.
Meanwhile, the magneto-resistance current sensors are all semiconductor resistor type sensors, and are realized based on magneto-resistance effects of semiconductor materials respectively.
As shown in fig. 1, the second inorganic dielectric layer located on the upper surface of the magnetoresistive current sensor, the second inorganic dielectric layer located on the upper surface of the first inorganic dielectric layer, and the upper surface of the second inorganic dielectric layer located on the upper surface of the functional chip are all on the same horizontal plane.
In terms of materials, the first inorganic medium layer is made of silicon nitride or silicon dioxide; the second inorganic medium layer is made of silicon nitride or silicon dioxide; the material of the magneto-resistance current sensor is FeNi.
Embodiment 2 also discloses a method for preparing the three-dimensional integrated TSV interposer with magnetoresistive current sensing, which is used for preparing the three-dimensional integrated TSV interposer with magnetoresistive current sensing of embodiment 1, and comprises the following steps:
S1, providing a silicon substrate, manufacturing a silicon through hole on the upper surface of the silicon substrate through an etching process, depositing an inorganic dielectric layer I in the silicon through hole and on the upper surface of the silicon substrate, sputtering a first metal seed layer on the dielectric layer I in the silicon through hole and on the upper surface of the silicon substrate, filling the silicon through hole with the first seed layer to form a TSV copper column, and removing the first metal seed layer on the upper surface of the silicon substrate through chemical mechanical polishing; sputtering a first metal seed layer on the first inorganic dielectric layer, electroplating to form thick metal covered on the upper surface of the silicon substrate and the inner wall of the silicon through hole, and removing the thick metal on the upper surface of the silicon substrate by chemical mechanical polishing (CPM) to finish the manufacture of the metalized through hole filled with the silicon through hole.
S2, as shown in FIG. 3, coating photoresist on the upper surface of the first inorganic medium layer, and carrying out photoetching treatment on the photoresist at a position where a magnetoresistive current sensor needs to be arranged to form a graph related to the magnetoresistive current sensor;
S3, as shown in FIG. 4, depositing a magneto-resistive current sensor film material on the photoresist and the first dielectric layer on the silicon substrate by magnetron sputtering; the magnetoresistive current sensor film material is typically FeNi.
As shown in fig. 5, S4, stripping the photoresist on the upper surface of the first inorganic dielectric layer and the thin film material of the magnetoresistive current sensor deposited on the photoresist, and placing the entire silicon substrate in a vacuum magnetic field annealing furnace for annealing treatment, wherein the annealing temperature and the magnetic field strength are set according to the required conditions, and the internal defects and the internal stress of the magnetoresistive current sensor can be reduced, the grain size of the thin film material is increased, the sensitivity of the magnetoresistive sensor is improved, and finally the silicon substrate with the magnetoresistive current sensor fixed on the upper surface of the first inorganic dielectric layer is formed;
S5, as shown in FIG. 6, depositing an inorganic medium layer II on the inorganic medium layer I and the upper surface of the magneto-resistance current sensor, etching the inorganic medium layer II at the joint of the port of the magneto-resistance current sensor and the through silicon via to expose the port of the magneto-resistance current sensor, which is interconnected with the through silicon via;
as shown in fig. 7, S6, coating photoresist on the upper surfaces of the first inorganic dielectric layer, the second inorganic dielectric layer and the magnetoresistive current sensor, performing photolithography processing on the photoresist according to the position of the preset circuit connection pattern to form an interconnection structure pattern according to the preset circuit connection pattern, and then depositing a second metal seed layer on the photoresist, the first inorganic dielectric layer and the second inorganic dielectric layer to photolithography the interconnection structure pattern of the device according to the preset circuit connection pattern;
As shown in fig. 8, S7, performing electroplating treatment on the area subjected to the photoetching treatment, removing the photoresist, and then reversely etching away the second metal seed layer to form an interconnection line, where the electroplating treatment in this step can increase the thickness of the interconnection line, so that the magnetoresistance current sensor lead-out terminal is connected with the TSV copper pillar through the interconnection line; the back etching is to etch the full-film without photoetching patterns, and a layer of RDL metal (second seed layer) is also arranged at the electroplating place, so that a very thin seed layer at the electroplating place can be etched.
As shown in fig. 9, S8, solder balls are soldered at the TSV copper pillar on the side of the silicon substrate far from the dielectric layer, so as to realize the external extraction of the silicon substrate signal.
In this embodiment, after S4, a functional chip is disposed at a preset position on the upper surface of the first inorganic medium layer, and then, correspondingly, S5 further includes: depositing an inorganic medium layer II at a non-pin part of the functional chip; s7, connecting the magneto-resistive current sensor leading-out end, the TSV copper column and the pin of the functional chip according to a preset circuit connection pattern through an interconnection line.
With the development of advanced packaging integration technology, the size of the silicon-based module is smaller and smaller, the three-dimensional integrated TSV adapter plate cannot be monitored by using a mature commercial current sensor, the TSV adapter plate and the current sensor cannot be integrated, and the overall circuit system is larger in size and lower in integration degree. Therefore, the invention provides the technical scheme, and the integration of the specific type of current sensor on the TSV adapter plate is realized by combining the related process.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (9)
1. The preparation method of the three-dimensional integrated TSV adapter plate with the magnetoresistive current sensing is characterized by comprising the following steps of:
S1, manufacturing a silicon through hole on the upper surface of a silicon substrate through an etching process, depositing an inorganic dielectric layer I in the silicon through hole and on the upper surface of the silicon substrate, sputtering a first metal seed layer on the dielectric layer I in the silicon through hole and on the upper surface of the silicon substrate, filling the silicon through hole with the first metal seed layer to form a TSV copper column, and removing the first metal seed layer on the upper surface of the silicon substrate;
S2, coating photoresist on the upper surface of the first inorganic medium layer, and carrying out photoetching treatment on the photoresist at a position where a magnetoresistive current sensor needs to be arranged to form a graph related to the magnetoresistive current sensor;
S3, depositing a magnetoresistive current sensor film material on the photoresist and the dielectric layer I on the silicon substrate through magnetron sputtering;
S4, stripping photoresist on the upper surface of the first inorganic medium layer and a thin film material of the magnetoresistive current sensor deposited on the photoresist, and placing the whole silicon substrate in a vacuum magnetic field annealing furnace for annealing treatment, and setting annealing temperature and magnetic field strength according to required conditions to finally form the silicon substrate with the magnetoresistive current sensor fixed on the upper surface of the first inorganic medium layer;
S5, depositing an inorganic medium layer II on the inorganic medium layer I and the upper surface of the magneto-resistance current sensor, etching the inorganic medium layer II at the joint of the port of the magneto-resistance current sensor and the through silicon via to expose the port of the magneto-resistance current sensor, which is interconnected with the through silicon via;
S6, coating photoresist on the upper surfaces of the first inorganic medium layer, the second inorganic medium layer and the magneto-resistive current sensor, carrying out photoetching treatment on the photoresist according to the position of a preset circuit connection pattern to form an interconnection structure pattern according to the preset circuit connection pattern, and then depositing a second metal seed layer on the photoresist, the first inorganic medium layer and the second inorganic medium layer to photoetching the interconnection structure pattern of the device according to the preset circuit connection pattern;
S7, electroplating the area subjected to photoetching, removing photoresist, and then reversely etching the second metal seed layer to form an interconnection line, so that the leading-out end of the magnetoresistive current sensor is connected with the TSV copper column through the interconnection line;
And S8, welding a solder ball at the TSV copper column of one side of the silicon substrate far away from the inorganic medium layer, so as to realize the external lead-out of the signal of the silicon substrate.
2. The method for manufacturing a three-dimensional integrated TSV interposer with magnetoresistive current sensing according to claim 1, wherein in S1, the first metal seed layer on the upper surface of the silicon substrate is removed, specifically by chemical mechanical polishing.
3. The method for manufacturing a three-dimensional integrated TSV interposer with magnetoresistive current sensing according to claim 1, wherein after S4, a functional chip is disposed at a preset position on the upper surface of the first inorganic dielectric layer, S5 further comprises: depositing an inorganic medium layer II at a non-pin part of the functional chip; s7, connecting the magneto-resistive current sensor leading-out end, the TSV copper column and the pin of the functional chip according to a preset circuit connection pattern through an interconnection line.
4. The method for manufacturing the three-dimensional integrated TSV adapter plate with the magnetoresistive current sensing function according to claim 1, wherein the specific structure of the three-dimensional integrated TSV adapter plate comprises the following steps: the semiconductor device comprises a silicon substrate, wherein a first surface of the silicon substrate is provided with an inorganic dielectric layer I, a TSV copper column penetrates through the silicon substrate and the inorganic dielectric layer I, a second surface opposite to the first surface of the silicon substrate is provided with a solder ball, and the solder ball is fixedly connected with the TSV copper column;
The magneto-resistance current sensor is fixedly arranged at a preset position on the upper surface of the first inorganic medium layer;
The second inorganic dielectric layer is arranged at a non-port of the magnetoresistive current sensor and at a tower joint where the non-TSV copper column of the first inorganic dielectric layer is positioned;
And the interconnection lines are used for connecting the TSV copper columns and the magneto-resistive current sensors together according to a preset circuit connection pattern.
5. The method for manufacturing the three-dimensional integrated TSV adapter plate with the magnetic resistance current sensing function according to claim 4, wherein a functional chip is further arranged on a preset position of the upper surface of the first inorganic medium layer, the second inorganic medium layer is arranged at a non-pin position of the functional chip, the interconnection lines are used for connecting a plurality of TSV copper columns, the magnetic resistance current sensors and pins of the functional chip together according to preset circuit connection patterns respectively, and output pins of the functional chip are further connected with current wires for key signal transmission of the functional chip, and the magnetic resistance current sensors are used for monitoring current waveforms in the current wires.
6. The method for manufacturing the three-dimensional integrated TSV interposer with magnetoresistive current sensing according to claim 4, wherein the inorganic dielectric layer I is made of silicon nitride or silicon dioxide.
7. The method for manufacturing the three-dimensional integrated TSV interposer with magnetoresistive current sensing according to claim 4, wherein the inorganic dielectric layer II is made of silicon nitride or silicon dioxide.
8. The method for manufacturing the three-dimensional integrated TSV interposer with the magnetoresistive current sensor according to claim 4, wherein the magnetoresistive current sensor is made of FeNi.
9. The method for manufacturing the three-dimensional integrated TSV adapter plate with the magnetoresistive current sensing function according to claim 4, wherein an inorganic dielectric layer I is arranged between the side wall of the TSV copper column and the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311696788.XA CN117936515B (en) | 2023-12-08 | 2023-12-08 | Three-dimensional integrated TSV adapter plate containing magnetic resistance current sensing and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311696788.XA CN117936515B (en) | 2023-12-08 | 2023-12-08 | Three-dimensional integrated TSV adapter plate containing magnetic resistance current sensing and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117936515A CN117936515A (en) | 2024-04-26 |
| CN117936515B true CN117936515B (en) | 2024-09-17 |
Family
ID=90763774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311696788.XA Active CN117936515B (en) | 2023-12-08 | 2023-12-08 | Three-dimensional integrated TSV adapter plate containing magnetic resistance current sensing and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117936515B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969098A (en) * | 2010-08-11 | 2011-02-09 | 上海腾怡半导体有限公司 | Manufacturing method of magnetic resistance sensor |
| CN112652610A (en) * | 2020-12-22 | 2021-04-13 | 苏州容启传感器科技有限公司 | Adapter plate, manufacturing method thereof and electronic equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7755466B2 (en) * | 2006-04-26 | 2010-07-13 | Honeywell International Inc. | Flip-chip flow sensor |
| CN107037382B (en) * | 2017-04-05 | 2023-05-30 | 江苏多维科技有限公司 | Pre-modulation magneto-resistance sensor |
| CN107946240A (en) * | 2017-12-15 | 2018-04-20 | 西安科锐盛创新科技有限公司 | TSV pinboards and preparation method thereof |
| KR102702092B1 (en) * | 2019-11-26 | 2024-09-04 | 삼성전자주식회사 | Semiconductor test device and test method using the same |
-
2023
- 2023-12-08 CN CN202311696788.XA patent/CN117936515B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969098A (en) * | 2010-08-11 | 2011-02-09 | 上海腾怡半导体有限公司 | Manufacturing method of magnetic resistance sensor |
| CN112652610A (en) * | 2020-12-22 | 2021-04-13 | 苏州容启传感器科技有限公司 | Adapter plate, manufacturing method thereof and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117936515A (en) | 2024-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105580135B (en) | Semiconductor devices with through hole item | |
| JP4514855B2 (en) | Probing card manufacturing method | |
| EP3124989B1 (en) | A monolithic three-axis magnetic field sensor and manufacturing method therefor | |
| EP2752676B1 (en) | Triaxial magnetic field sensor | |
| JP5567818B2 (en) | Semiconductor interposer and manufacturing method thereof (silicon interposer test for 3D chip stack) | |
| KR100712561B1 (en) | Wafer type probe card, manufacturing method thereof and semiconductor inspection device provided with wafer type probe card | |
| US20090224372A1 (en) | Wafer translator having a silicon core isolated from signal paths by a ground plane | |
| US20100276690A1 (en) | Silicon Wafer Having Testing Pad(s) and Method for Testing The Same | |
| US6828810B2 (en) | Semiconductor device testing apparatus and method for manufacturing the same | |
| KR101127478B1 (en) | Current measuring element using through silicon via, method of manufacturing the same and current measuring circuit including the same | |
| CN113889420A (en) | Semiconductor element structure and method for bonding two substrates | |
| CN111696880B (en) | Bare chip KGD screening method based on TSV silicon wafer reconstruction | |
| CN117936515B (en) | Three-dimensional integrated TSV adapter plate containing magnetic resistance current sensing and preparation method | |
| GB2353399A (en) | Testing printed or integrated circuits | |
| US4933635A (en) | In-line process monitors for thin film wiring | |
| US20090224410A1 (en) | Wafer translator having a silicon core fabricated with printed circuit board manufacturing techniques | |
| JP2007227727A (en) | Module package and built-in semiconductor temperature inspection method | |
| WO2018004689A1 (en) | Piezoelectric package-integrated current sensing devices | |
| TWI431278B (en) | Semiconductor test probe card space transformer | |
| CN104347594A (en) | Silicon through hole test structure, silicon through hole test method and silicon through hole formation method | |
| CN116299082A (en) | Three-dimensional magnetic field sensor with 3D (three-dimensional) aliasing structure and preparation method thereof | |
| CN114705902A (en) | Current detection device and its packaging structure | |
| CN119812166B (en) | Through hole resistor de-embedding structure and through hole resistor detection method | |
| JPH08255976A (en) | Multilayer wiring board | |
| CN102867796A (en) | 3D integrated circuit structure and method for detecting whether chip structures are aligned or not |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |