CN117757432B - High-suspension grinding fluid suitable for large-size silicon wafer, preparation method and application - Google Patents
High-suspension grinding fluid suitable for large-size silicon wafer, preparation method and application Download PDFInfo
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Abstract
本发明涉及一种适用于大尺寸硅片的高悬浮研磨液，按照重量份计算，包括催化剂助剂5‑10份；催化剂前驱体10‑20份；氧化剂5‑15份；分散剂5‑20份；pH调节剂5‑20份；表面活性剂0.2‑5份；去离子水15‑45份。本发明还公开了上述研磨液的制备方法及用途。本发明的催化剂助剂同时含有吡啶基团与羧基基团，其具有加快凝胶的过程，减少反应的活化能，提高悬浮性的作用。氧化剂蒽醌‑2‑磺酸钠具有光激发氧化作用，可显著提高光催化效率，亚甲基二萘磺酸钠分散剂可提高分散、悬浮性。十八醇聚氧乙烯醚作为表面活性剂可以与催化剂助剂、分散剂等产生静电排斥效果，增强其对磨料的悬浮性。本发明通过多组分协同共同提高研磨液的悬浮性。
The present invention relates to a high suspension grinding liquid suitable for large-size silicon wafers, which comprises 5-10 parts of catalyst auxiliary agent, 10-20 parts of catalyst precursor, 5-15 parts of oxidant, 5-20 parts of dispersant, 5-20 parts of pH regulator, 0.2-5 parts of surfactant and 15-45 parts of deionized water according to parts by weight. The present invention also discloses a preparation method and use of the above-mentioned grinding liquid. The catalyst auxiliary agent of the present invention contains a pyridine group and a carboxyl group at the same time, which has the effect of accelerating the gelation process, reducing the activation energy of the reaction and improving the suspension. The oxidant anthraquinone-2-sodium sulfonate has a light-excited oxidation effect, which can significantly improve the photocatalytic efficiency, and the methylene dinaphthalene sodium sulfonate dispersant can improve the dispersion and suspension. Octadecanol polyoxyethylene ether as a surfactant can produce an electrostatic repulsion effect with a catalyst auxiliary agent, a dispersant, etc., and enhance its suspension to abrasive. The present invention improves the suspension of the grinding liquid by synergistically combining multiple components.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing processes, and particularly relates to a high-suspension grinding fluid suitable for large-size silicon wafers, a preparation method and application.
Background
With the development of semiconductor material technology, higher requirements are also put on the specification and quality of silicon wafers, and the market demand proportion of large-diameter silicon wafers suitable for micro-machining is increasingly increased.
In the manufacturing process of large-size monocrystalline silicon wafers for semiconductors, the grinding technical indexes of the silicon wafers are more severe, the silicon wafers are required to have higher removal rate, smaller thickness difference, lower damaged layer depth and the like, the grinding process is a key step for maintaining the quality of the silicon wafers, the grinding liquid used in the step is one of core technologies affecting the grinding indexes, the dispersibility, the suspension property and the like of the grinding liquid play a decisive role in grinding effects, and meanwhile, the grinding rate, the surface quality and the like of the silicon wafers are also provided with new technical challenges by the grinding liquid.
CN114751438B provides an alumina abrasive, a preparation method, use, silicon wafer grinding fluid containing the same and a grinding method. The alumina abrasive is a two-dimensional flaky circular alumina abrasive, the surface morphology of the alumina abrasive is porous, smooth and free of sharp edges, the particle size is uniform, and the particle size distribution is narrow. The silicon wafer grinding fluid comprises 0.1-5 parts of dispersing agent, 0.1-10 parts of polyalcohol, 1-10 parts of pH regulator, 0.1-5 parts of suspending agent, 0.05-0.1 part of surfactant, 0.001-0.05 part of antirust agent, 0.05-0.5 part of defoaming agent, 10-20 parts of alumina abrasive, 5-20 parts of alpha-phase alumina and 60-80 parts of water. The silicon wafer grinding fluid has the advantages of good abrasive suspension property, difficult scratching and high grinding efficiency.
Disclosure of Invention
The invention solves the technical problems that the existing silicon wafer grinding liquid has poor suspension property, the surface quality of the silicon wafer ground by the grinding liquid is low, and more scratches are caused.
In view of the technical problems in the prior art, the invention designs a preparation method and application of a high-suspension grinding fluid suitable for large-size silicon wafers.
In order to solve the technical problems, the invention adopts the following scheme:
The high suspension grinding fluid suitable for the large-size silicon wafer is characterized by comprising the following components in parts by weight:
Wherein the catalyst auxiliary agent is one of 2-methylpyridine-4-formic acid, 6-carboxypyridine-2-methanol, 2-carboxypyridine-5-boric acid, 5-carboxyl-2, 3-diaminopyridine and 5, 6-dimethyl-3-carboxyl-2-pyridone;
The catalyst precursor is one of tetrabutyl titanate and tetraethoxysilane;
The mass ratio of the catalyst auxiliary agent to the catalyst precursor is 1-2:2-4;
the oxidant is one of sodium pyridine-4-acetate, sodium anthraquinone-2-sulfonate, cyanoethylene and 2,4, 6-triphenylpyridinium tetrafluoroborate.
The dispersing agent is one or more of sodium methylene dinaphthyl sulfonate, sodium dodecyl benzene sulfonate, sodium dodecyl succinate, sodium dodecyl sulfate, sodium polyacrylate, sodium hexametaphosphate, alpha-olefin sulfonate and sodium secondary alkyl sulfonate.
Further, the pH regulator is one or more of sodium hydroxide, potassium hydroxide, monoethanolamine and triethanolamine.
Further, the surfactant is one or more of C12-C16 fatty alcohol polyoxyethylene ether, C18 fatty alcohol polyoxyethylene ether, octyl phenol polyoxyethylene ether and acetylene glycol polyoxyethylene ether.
Further, the catalyst auxiliary agent is 2-methylpyridine-4-formic acid;
the catalyst precursor is tetrabutyl titanate;
The oxidant is anthraquinone-2-sodium sulfonate.
Further, the dispersing agent is methylene dinaphthyl sodium sulfonate;
the pH regulator is monoethanolamine or triethanolamine;
The surfactant is stearyl alcohol polyoxyethylene ether.
The invention also discloses a preparation method of the high-suspension grinding fluid suitable for the large-size silicon wafer, which is characterized by comprising the following steps:
step 1, uniformly stirring deionized water and a pH regulator at room temperature of 100-300rpm for 5-10min to obtain a pH regulator system;
Step 2, adding a catalyst precursor into the pH regulator system obtained in the step 1 to hydrolyze the catalyst precursor into titanium dioxide, wherein the condition is that the rotating speed is 300-1000rpm, the temperature is 30-60 ℃ and the time is 5-15min, and obtaining a solution system A;
Step 3, adding a catalyst auxiliary agent into the solution system A, wherein the condition is that the rotating speed is 300-1000rpm, the temperature is 30-60 ℃ and the time is 5-15min, and obtaining a solution system B;
And 4, respectively adding an oxidant, a dispersing agent and a surfactant into the solution system B, wherein the conditions are that the rotating speed is 300-1000rpm, the temperature is 30-60 ℃ and the time is 10-30min, and obtaining the high-suspension grinding liquid suitable for large-size silicon wafers.
The invention also discloses a grinding process of the high-suspension grinding fluid suitable for the large-size silicon wafer, which is characterized by comprising the following steps of:
The method comprises the steps of 1, diluting a prepared high-suspension grinding fluid applicable to large-size silicon wafers by 15-35 times to obtain a diluted high-suspension grinding fluid for later use;
step 2, setting ultraviolet light to irradiate the surface of the silicon wafer, wherein the wavelength of the ultraviolet light is 100-400nm;
Step 3, adding the grinding abrasive into the diluted high-suspension grinding liquid obtained in the step 1 according to the mass fraction of 10% -30%, and stirring for 8-15min at the rotating speed of 30-200rpm to obtain the high-suspension grinding liquid added with the grinding abrasive;
And 4, grinding the substrate into 8/12 inch silicon wafers by using the high suspension grinding liquid added with the grinding abrasive obtained in the step 3, wherein the grinding condition is that the rotating speed of a grinding machine is 50-100r/min, the pressure is 60-100kg, the flow is 5-200mL/min, and the grinding time is 10-30min.
Further, the grinding abrasive in the step 3 is one of silicon dioxide, cerium oxide, diamond, boron nitride, zirconium oxide and aluminum oxide;
the particle size range of the alumina grinding material is 1-20 mu m;
In the present invention, the abrasive can be further preferably alumina;
In the present invention, the particle size range of the alumina abrasive can be more preferably 5 to 15 μm.
The invention also discloses application of the high-suspension grinding fluid suitable for large-size silicon wafers in the field of silicon wafer grinding.
In some embodiments of the present invention, the catalyst promoter may preferably be 8-10 parts, catalyst precursor 15-20 parts, oxidant 10-15 parts, dispersant 5-15 parts, pH regulator 5-15 parts, surfactant 0.2-3 parts, deionized water 20-35 parts.
In the invention, the catalyst auxiliary agent and the catalyst precursor tetrabutyl titanate can promote the gelation of titanium dioxide, and the titanium dioxide gel not only has excellent photocatalysis effect, but also can be uniformly dispersed in water, thereby improving suspension property and grinding quality.
In the invention, the oxidant can have electrostatic repulsive interaction with the catalyst auxiliary agent and hydroxyl groups on the titanium dioxide, so that the suspension property of the grinding fluid can be improved.
In some applications, the high suspension polishing liquid of the present invention is also suitable for semiconductor materials such as gallium nitride and sapphire.
It should be noted that, in the present invention, unless otherwise specified, reference to a specific meaning of "comprising" in the definition and description of compositions includes both open "comprising", "comprising" and the like and closed "consisting of.
The invention provides a high-suspension grinding fluid suitable for large-size silicon wafers, a preparation method and application thereof, and the high-suspension grinding fluid has the following beneficial effects:
(1) The catalyst auxiliary agent 2-methylpyridine-4-formic acid adopted in the invention contains pyridine groups and carboxyl groups at the same time, and has electrostatic repulsive action with sulfonic acid groups contained in catalyst precursor anthraquinone-2-sodium sulfonate, so that the suspension property of the grinding fluid is improved.
(2) The oxidant anthraquinone-2-sodium sulfonate adopted in the invention has the following advantages:
Firstly, the anthraquinone-2-sodium sulfonate has the function of light excitation oxidation, and can obviously improve the photocatalysis efficiency.
Secondly, two polar groups of phenolic oxygen groups and sulfonic acid groups contained in anthraquinone-2-sodium sulfonate can be used as buffering agents to stabilize the pH value of the grinding fluid and ensure the stable progress of the reaction.
Thirdly, because the anthraquinone-2-sodium sulfonate contains sulfonic acid groups, the anthraquinone-2-sodium sulfonate can have electrostatic repulsive interaction with catalyst auxiliary agents and hydroxyl groups on titanium dioxide, and further can improve the suspension property of the grinding fluid.
(3) The methylene dinaphthyl sodium sulfonate dispersant has the following advantages:
Firstly, the methylene dinaphthyl sodium sulfonate can be adsorbed on the surface of solid particles to generate a high enough barrier to disperse the particles so as to achieve the dispersing and suspending characteristics.
Secondly, the sodium methylene dinaphthyl sulfonate and the carboxyl group of the catalyst auxiliary agent can achieve the effect of electrostatic repulsion, so that the dispersibility of the grinding abrasive is synergistically improved, the agglomeration is reduced, and the grinding quality is improved.
(4) The stearyl alcohol polyoxyethylene ether used as the surfactant has the following advantages:
Firstly, the alcohol hydroxyl contained in the stearyl alcohol polyoxyethylene ether can generate electrostatic repulsion effect with catalyst auxiliary agents, dispersing agents and the like, and the suspension property of the stearyl alcohol polyoxyethylene ether to the abrasive can be enhanced.
The dioctadecyl alcohol polyoxyethylene ether surfactant can also cooperate with the phenolic oxygen group in the oxidant, and the characteristic that the phenolic oxygen group can enhance the molecular polarity is utilized to jointly enhance the solubility of substances such as dispersing agents, catalyst auxiliary agents and the like, so that the aggregation of abrasive materials is avoided, namely the dispersion suspension property of the abrasive materials is enhanced.
(5) The invention designs a special catalytic system with unique advantages:
the invention is different from other titanium dioxide nanoparticle catalytic systems in that the catalyst adopted in the invention is titanium dioxide gel prepared from tetrabutyl titanate as a catalyst precursor.
The main reason is that titanium dioxide has a hydrophilic group but is not ideal in water solubility, and is highly likely to agglomerate during grinding, thereby affecting the grinding effect. The titanium dioxide gel not only has excellent photocatalysis effect, but also can be uniformly dispersed in water, thereby improving grinding quality. In addition, the titanium dioxide gel has certain viscosity, which is helpful for improving the suspension property of the grinding fluid.
Therefore, the high-suspension grinding fluid suitable for large-size silicon wafers has very good application prospect and large-scale industrialized popularization potential in the field of large-size silicon wafer grinding.
Drawings
FIG. 1 is a graph showing the suspension effect of the high suspension slurry of example 1 of the present invention upon standing for 5 days;
FIG. 2 is a graph showing the suspension effect of the polishing slurry of comparative example 2 on standing for 5 days;
FIG. 3 is a graph showing the suspension effect of the polishing slurry of comparative example 4 of the present invention after standing for 5 days.
Detailed Description
The invention is further described with reference to specific examples and figures:
TABLE 1 example 1-example 8
TABLE 2 comparative examples 1-6
Preparation method of high-suspension grinding liquid suitable for large-size silicon wafer
Wherein the preparation method of the embodiment 1-3 comprises the following steps:
step 1, uniformly stirring deionized water and a pH regulator at room temperature of 200rpm for 8min to obtain a pH regulator system;
Step 2, adding a catalyst precursor into the pH regulator system obtained in the step 1 to hydrolyze the catalyst precursor into titanium dioxide, wherein the condition is that the rotation speed is 800rpm, the temperature is 50 ℃ and the time is 10min, and obtaining a solution system A;
step 3, adding a catalyst auxiliary agent into the solution system A, wherein the condition is that the rotating speed is 800rpm, the temperature is 50 ℃, and the time is 10min, so as to obtain a solution system B;
And 4, respectively adding an oxidant, a dispersing agent and a surfactant into the solution system B, wherein the conditions are that the rotating speed is 800rpm, the temperature is 50 ℃, and the time is 20 minutes, so that the high-suspension grinding liquid suitable for large-size silicon wafers is obtained.
The preparation method of the embodiment 4-6 comprises the following steps:
Step 1, uniformly stirring deionized water and a pH regulator at room temperature of 100rpm for 10min to obtain a pH regulator system;
Step 2, adding a catalyst precursor into the pH regulator system obtained in the step 1 to hydrolyze the catalyst precursor into titanium dioxide, wherein the condition is that the rotating speed is 300rpm, the temperature is 60 ℃ and the time is 15min, so as to obtain a solution system A;
Step 3, adding a catalyst auxiliary agent into the solution system A, wherein the condition is that the rotating speed is 300rpm, the temperature is 60 ℃, and the time is 15min, so as to obtain a solution system B;
And 4, respectively adding an oxidant, a dispersing agent and a surfactant into the solution system B, wherein the conditions are that the rotating speed is 300rpm, the temperature is 60 ℃, and the time is 30 minutes, so that the high-suspension grinding liquid suitable for large-size silicon wafers is obtained.
The preparation method of examples 7-8 comprises the following steps:
Step 1, uniformly stirring deionized water and a pH regulator at room temperature of 300rpm for 5min to obtain a pH regulator system;
step 2, adding a catalyst precursor into the pH regulator system obtained in the step 1 to hydrolyze the catalyst precursor into titanium dioxide, wherein the condition is that the rotating speed is 1000rpm, the temperature is 30 ℃ and the time is 5min, and obtaining a solution system A;
Step 3, adding a catalyst auxiliary agent into the solution system A, wherein the condition is that the rotating speed is 1000rpm, the temperature is 30 ℃ and the time is 5min, so as to obtain a solution system B;
And 4, respectively adding an oxidant, a dispersing agent and a surfactant into the solution system B, wherein the conditions are that the rotating speed is 1000rpm, the temperature is 30 ℃, and the time is 10 minutes, so that the high-suspension grinding liquid suitable for large-size silicon wafers is obtained.
The preparation method of the comparative example of the present invention is the same as that of example 1.
Grinding process for high-suspension grinding liquid suitable for large-size silicon wafer
Comprises the following steps:
Diluting the prepared high-suspension grinding fluid applicable to large-size silicon wafers by 25 times to obtain diluted high-suspension grinding fluid for later use;
step 2, setting ultraviolet light to irradiate the surface of the silicon wafer, wherein the wavelength of the ultraviolet light is 250nm;
And 3, adding the alumina grinding material into the diluted high-suspension grinding fluid obtained in the step 1 according to the mass fraction of 20%, and stirring for 10min at the rotating speed of 150rpm to obtain the high-suspension grinding fluid added with the grinding material, wherein the particle size of the alumina grinding material is 10 mu m.
And 4, grinding the substrate into the 8/12 inch silicon wafer by using the high suspension grinding liquid added with the grinding abrasive obtained in the step 3, wherein the grinding condition is that the rotating speed of a grinding machine is 100r/min, the pressure is 80kg, the flow is 100mL/min, and the grinding time is 20min.
Regarding performance testing and description:
The test method of the suspension time comprises the following steps:
stirring the grinding fluid and water for 5-15min according to the mass fraction of 1:25, adding 20% of grinding abrasive into the system, stirring for 5-15min, standing, observing and recording the suspension time of the grinding abrasive.
TABLE 3 test results
| Examples | Suspension time | Examples | Suspension time |
| Example 1 | For 12 days | Example 8 | For 10 days |
| Example 2 | For 8 days | Comparative example 1 | For 6 days |
| Example 3 | 11 Days | Comparative example 2 | For 5 days |
| Example 4 | 9 Days | Comparative example 3 | For 4 days |
| Example 5 | For 10 days | Comparative example 4 | For 3 days |
| Example 6 | 9.5 Days | Comparative example 5 | For 7 days |
| Example 7 | For 10 days | Comparative example 6 | For 5 days |
Analysis of test results shows that:
As can be seen from the test results of Table 3, the suspension effect of the high suspension polishing solutions of examples 1 to 8 of the present invention was superior to that of the polishing solutions of comparative examples 1 to 6.
As can be seen from comparative examples 1 and 3, in example 1, the suspension time of the polishing liquid can be significantly increased due to the catalyst auxiliary agent and the oxidant containing special groups, and the carboxyl groups and the sulfonic groups can well have synergistic effect with other components.
As can be seen from comparative example 2, although titanium dioxide is used as the catalyst, the titanium dioxide gel has excellent dispersibility and a certain viscosity, so that the titanium dioxide gel can better play the roles of other functional components, and the suspension property of the grinding fluid is remarkably improved.
Comparative examples 4 and 5 show that the addition of cationic dispersant and surfactant does not only exert a dispersing effect, but also causes agglomeration due to electrostatic effect, thereby reducing the suspension time of the polishing slurry.
Comparative example 6 although no catalyst auxiliary and no catalyst precursor were added, the suspension time of the prepared slurry was still superior to comparative examples 3 and 4 because of the synergistic effect among the oxidizing agent, the dispersing agent, and the surfactant, and no titanium dioxide nanoparticles having poor water solubility were added.
Further contrasted by the attached drawings in the specification:
FIG. 1 is a graph showing the suspension effect of the high suspension polishing liquid of example 1 of the present invention for 5 days, FIG. 2 is a graph showing the suspension effect of the polishing liquid of comparative example 2 for 5 days, and FIG. 3 is a graph showing the suspension effect of the polishing liquid of comparative example 4 for 5 days.
As can be seen from FIGS. 1,2 and 3, the high suspension polishing slurry of example 1 of the present invention still has good suspension property after standing for 5 days.
Whereas comparative example 2 had settled out much after a period of 5 days, comparative example 4 had settled out almost completely to the bottom.
Compared with the prior art, the high suspension grinding fluid suitable for large-size silicon wafers, the preparation method and the application have the following advantages:
According to the invention, the suspension property of the system is improved through the methylene dinaphthyl sodium sulfonate dispersant, the suspension property of the system is further improved through the oxidant anthraquinone-2-sodium sulfonate, the suspension property of the system is further improved through the catalyst auxiliary agent 2-methylpyridine-4-formic acid and the catalyst precursor tetrabutyl titanate, the suspension property of the system is further improved through the stearyl alcohol polyoxyethylene ether as a surfactant, and the prepared grinding liquid under the superposition of multiple effects has extremely excellent suspension property, and can obviously improve the grinding effect.
While the present invention has been described above by way of example with reference to the embodiments and the accompanying drawings, it is apparent that the implementation of the present invention is not limited by the above manner, and it is within the scope of the present invention to apply the inventive concept and technical solution to other situations as long as various improvements are adopted by the inventive concept and technical solution, or without any improvement.
Claims (8)
1. The high suspension grinding fluid suitable for the large-size silicon wafer is characterized by comprising the following components in parts by weight:
5-10 parts of catalyst auxiliary agent;
10-20 parts of a catalyst precursor;
5-15 parts of an oxidant;
5-20 parts of dispersing agent;
5-20 parts of pH regulator;
0.2-5 parts of surfactant;
15-45 parts of deionized water;
Wherein the catalyst auxiliary agent is one of 2-methylpyridine-4-formic acid, 6-carboxypyridine-2-methanol, 2-carboxypyridine-5-boric acid, 5-carboxyl-2, 3-diaminopyridine and 5, 6-dimethyl-3-carboxyl-2-pyridone;
The catalyst precursor is one of tetrabutyl titanate and tetraethoxysilane;
The oxidant is one of sodium pyridine-4-acetate, sodium anthraquinone-2-sulfonate, cyanoethylene and 2,4, 6-triphenylpyridinium tetrafluoroborate;
The dispersing agent is one or more of sodium methylene dinaphthyl sulfonate, sodium dodecyl benzene sulfonate, sodium dodecyl succinate, sodium dodecyl sulfate, sodium polyacrylate, sodium hexametaphosphate, alpha-olefin sulfonate and sodium secondary alkyl sulfonate;
the surfactant is one or more of C12-C16 fatty alcohol polyoxyethylene ether, C18 fatty alcohol polyoxyethylene ether, octyl phenol polyoxyethylene ether and acetylene glycol polyoxyethylene ether.
2. The high suspension slurry suitable for large scale silicon wafers of claim 1 wherein:
The pH regulator is one or more of sodium hydroxide, potassium hydroxide, monoethanolamine and triethanolamine.
3. The high suspension slurry suitable for large scale silicon wafers of claim 1 wherein:
The catalyst auxiliary agent is 2-methylpyridine-4-formic acid;
the catalyst precursor is tetrabutyl titanate;
The oxidant is anthraquinone-2-sodium sulfonate.
4. A high suspension slurry suitable for large scale silicon wafers as claimed in claim 2 wherein:
the dispersing agent is methylene dinaphthyl sodium sulfonate;
the pH regulator is monoethanolamine or triethanolamine;
The surfactant is C18 fatty alcohol polyoxyethylene ether.
5. A method of preparing a high suspension slurry for large scale silicon wafers according to any one of claims 1-4 comprising the steps of:
step 1, uniformly stirring deionized water and a pH regulator at room temperature of 100-300rpm for 5-10min to obtain a pH regulator system;
Step 2, adding tetrabutyl titanate serving as a catalyst precursor into the pH regulator system obtained in the step 1 to hydrolyze the tetrabutyl titanate into titanium dioxide, wherein the condition is that the rotating speed is 300-1000rpm, the temperature is 30-60 ℃ and the time is 5-15min, and obtaining a solution system A;
Step 3, adding a catalyst auxiliary agent into the solution system A, wherein the condition is that the rotating speed is 300-1000rpm, the temperature is 30-60 ℃ and the time is 5-15min, and obtaining a solution system B;
And 4, respectively adding an oxidant, a dispersing agent and a surfactant into the solution system B, wherein the conditions are that the rotating speed is 300-1000rpm, the temperature is 30-60 ℃ and the time is 10-30min, and obtaining the high-suspension grinding liquid suitable for large-size silicon wafers.
6. A process for grinding a high suspension grinding fluid suitable for large-size silicon wafers according to any one of claims 1 to 4, characterized by comprising the steps of:
The method comprises the steps of 1, diluting a prepared high-suspension grinding fluid applicable to large-size silicon wafers by 15-35 times to obtain a diluted high-suspension grinding fluid for later use;
step 2, setting ultraviolet light to irradiate the surface of the silicon wafer, wherein the wavelength of the ultraviolet light is 100-400nm;
Step 3, adding the grinding abrasive into the diluted high-suspension grinding liquid obtained in the step 1 according to the mass fraction of 10% -30%, and stirring for 8-15min at the rotating speed of 30-200rpm to obtain the high-suspension grinding liquid added with the grinding abrasive;
And 4, grinding the substrate into 8/12 inch silicon wafers by using the high suspension grinding liquid added with the grinding abrasive obtained in the step 3, wherein the grinding condition is that the rotating speed of a grinding machine is 50-100r/min, the pressure is 60-100kg, the flow is 5-200mL/min, and the grinding time is 10-30min.
7. The process for grinding a high suspension grinding fluid suitable for large-sized silicon wafers according to claim 6, wherein:
The grinding abrasive in the step 3 is one of silicon dioxide, cerium oxide, diamond, boron nitride, zirconium oxide and aluminum oxide;
The particle size of the alumina grinding material ranges from 1 μm to 20 μm.
8. Use of a high suspension grinding fluid suitable for large-size silicon wafers according to any one of claims 1 to 4 in the field of silicon wafer grinding.
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| CN101313042A (en) * | 2005-09-26 | 2008-11-26 | 卡伯特微电子公司 | Compositions and methods for tantalum cmp |
| CN101622326A (en) * | 2007-02-27 | 2010-01-06 | 卡伯特微电子公司 | The attenuable chemical-mechanical polishing compositions that comprises tensio-active agent |
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