CN116042099B - Grinding aid with high wettability, high dispersion, high suspension and easy cleaning, preparation method and application thereof, and grinding fluid containing grinding aid - Google Patents
Grinding aid with high wettability, high dispersion, high suspension and easy cleaning, preparation method and application thereof, and grinding fluid containing grinding aid Download PDFInfo
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- CN116042099B CN116042099B CN202310109880.5A CN202310109880A CN116042099B CN 116042099 B CN116042099 B CN 116042099B CN 202310109880 A CN202310109880 A CN 202310109880A CN 116042099 B CN116042099 B CN 116042099B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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Abstract
本发明提供一种高润湿、高分散、高悬浮、易清洗的研磨助剂、制备方法、用途及包含其的研磨液。本发明研磨助剂采用分散剂‑防沉剂‑电荷斥力剂‑润湿剂‑消泡剂‑两亲性溶剂复配,并与软硬磨料混合得到研磨液。本发明研磨助剂具有极高的表面动态润湿、渗透能力,不易产生泡沫,能快速在砷化镓表面铺展,并且能快速渗透到砷化镓表面的微裂缝中,形成劈裂效果,提升研磨效率;同时对磨料具有良好的分散和防沉作用,避免研磨过程中不同微粉和磨屑的团聚,能使不同种类磨料在研磨液中分布均匀,长久保持悬浮状态,研磨时砷化镓受力均匀,研磨速率快,研磨后表面粗糙度低,TTV低,平整度好且无明显划痕,易清洗,表面无杂质残留。
The present invention provides a high-wetting, high-dispersion, high-suspending, easy-to-clean grinding aid, a preparation method, a use, and a grinding liquid containing the same. The grinding aid of the present invention is compounded with a dispersant, an anti-settling agent, a charge repulsion agent, a wetting agent, a defoaming agent, and an amphiphilic solvent, and is mixed with soft and hard abrasives to obtain a grinding liquid. The grinding aid of the present invention has extremely high surface dynamic wetting and penetration capabilities, is not easy to generate foam, can quickly spread on the surface of gallium arsenide, and can quickly penetrate into the microcracks on the surface of gallium arsenide to form a splitting effect and improve grinding efficiency; at the same time, it has a good dispersing and anti-settling effect on the abrasive, avoids the agglomeration of different micropowders and grinding chips during the grinding process, can make different types of abrasives evenly distributed in the grinding liquid, and keep a suspended state for a long time. During grinding, gallium arsenide is subjected to uniform force, the grinding rate is fast, the surface roughness after grinding is low, the TTV is low, the flatness is good and there are no obvious scratches, it is easy to clean, and there is no impurity residue on the surface.
Description
技术领域Technical Field
本发明涉及研磨液技术,尤其涉及一种高润湿、高分散、高悬浮、易清洗的研磨助剂、制备方法、用途及包含其的研磨液。The invention relates to grinding liquid technology, and in particular to a high-wetting, high-dispersion, high-suspending and easy-to-clean grinding aid, a preparation method, a use and a grinding liquid containing the same.
背景技术Background Art
砷化镓(GaAs)作为第二代半导体其价格昂贵而素有“半导体贵族”之称。砷化镓是当代国际公认的继“硅”之后最成熟的化合物半导体材料,具有高频率、高电子迁移率、高输出功率、低噪音以及线性度良好等优越特性,是光电子和微电子工业最重要的支撑材料之一。以砷化镓为代表的第二代半导体,广泛应用于制造高频、高速、大功率、低噪声、耐高温、抗辐照等集成电路领域,已经发展成为现代电子信息产品”和“信息高速公路”关键技术,5G芯片市场非常好,产品供不应求。Gallium arsenide (GaAs) is a second-generation semiconductor and is known as the "semiconductor aristocrat" for its high price. Gallium arsenide is internationally recognized as the most mature compound semiconductor material after "silicon". It has superior characteristics such as high frequency, high electron mobility, high output power, low noise and good linearity. It is one of the most important supporting materials for the optoelectronics and microelectronics industries. The second-generation semiconductors represented by gallium arsenide are widely used in the manufacture of high-frequency, high-speed, high-power, low-noise, high-temperature resistant, and radiation-resistant integrated circuits. It has developed into a key technology for "modern electronic information products" and "information highways". The 5G chip market is very good and the product is in short supply.
砷化镓,作为化合物半导体的一种,其生产流程与大多数化合物半导体碳化硅、磷化铟等相似,都包括多晶合成、单晶生长后再经过切割、磨边、研磨、抛光、清洗等多道工艺,其中研磨工艺对砷化镓衬底片质量至关重要,由于砷化镓硬度较低,脆性高,研磨中的高硬度磨料和大颗粒极容易造成砷化镓表面划痕,研磨中砷化镓片受力不均,造成破片率升高,影响产能。砷化镓研磨过程中会产生大量纳米级无机颗粒,由于静电作用,极易形成团聚和聚沉,吸附在磨料表面,导致移除率下降、表面划伤,严重影响砷化镓加工效率和生产良率。Gallium arsenide, as a type of compound semiconductor, has a production process similar to that of most compound semiconductors such as silicon carbide and indium phosphide, including polycrystalline synthesis, single crystal growth, and then cutting, edging, grinding, polishing, cleaning and other processes. The grinding process is crucial to the quality of gallium arsenide substrates. Due to the low hardness and high brittleness of gallium arsenide, high-hardness abrasives and large particles in grinding can easily cause scratches on the surface of gallium arsenide. The uneven force on gallium arsenide sheets during grinding increases the breakage rate and affects production capacity. A large number of nano-scale inorganic particles will be generated during the gallium arsenide grinding process. Due to the electrostatic effect, they are very easy to form agglomerations and precipitates, and adsorb on the abrasive surface, resulting in a decrease in removal rate and surface scratches, which seriously affects the processing efficiency and production yield of gallium arsenide.
砷化镓研磨液主要是由磨料、去离子水和悬浮助剂组成,磨料主要有氧化铝、氧化硅等,单纯的氧化铝磨料硬度太高,棱角锋利,易产生划伤,而氧化硅则硬度低,研磨效率低下,同时研磨过程中易破碎成纳米粉末颗粒,包覆在氧化铝颗粒表面,形成团聚颗粒造成划伤。针对砷化镓研磨过程的对加工效率和加工质量的要求,有必要开发一种砷化镓研磨液,兼顾加工效率和加工质量。Gallium arsenide grinding fluid is mainly composed of abrasives, deionized water and suspension aids. Abrasives mainly include aluminum oxide, silicon oxide, etc. The hardness of pure aluminum oxide abrasive is too high, the edges are sharp, and it is easy to scratch. Silicon oxide has low hardness and low grinding efficiency. At the same time, it is easy to break into nano powder particles during the grinding process, which are coated on the surface of aluminum oxide particles to form agglomerated particles and cause scratches. In view of the requirements of processing efficiency and processing quality in the gallium arsenide grinding process, it is necessary to develop a gallium arsenide grinding fluid that takes into account both processing efficiency and processing quality.
目前,已经公开了一些研磨液可以用于砷化镓的研磨,例如:At present, some grinding liquids have been disclosed that can be used for grinding gallium arsenide, such as:
CN115039203A公开了一种研磨液,该研磨液含有磨粒、选自由羟基酸及其盐组成的组中的至少一种羟基酸成分及化合物Z,化合物Z具有可以被取代的烃基及聚氧亚烷基。该研磨液组可分为第1液与第2液来保存,第1液包含磨粒,第2液包含羟基酸成分及化合物Z。提高研磨后基体的平坦度。CN115039203A discloses a polishing liquid, which contains abrasive grains, at least one hydroxy acid component selected from the group consisting of hydroxy acids and their salts, and compound Z, wherein compound Z has a hydrocarbon group and a polyoxyalkylene group that can be substituted. The polishing liquid group can be stored in a first liquid and a second liquid, wherein the first liquid contains abrasive grains, and the second liquid contains a hydroxy acid component and compound Z. The flatness of the substrate after polishing is improved.
CN110914958A公开了研磨方法和研磨组合物,在第1预研磨阶段中所使用的第1研磨液可包含磨粒A1、水溶性高分子P1及水。在第2预研磨阶段中所使用的第2研磨液可包含磨粒A2、水溶性高分子P2及水。在第3预研磨阶段中所使用的第3研磨液可包含磨粒A3、水溶性高分子P3及水。研磨后可有效达成高平坦度且低缺陷的表面。CN110914958A discloses a grinding method and a grinding composition. The first grinding liquid used in the first pre-grinding stage may contain abrasive grains A1, water-soluble polymer P1 and water. The second grinding liquid used in the second pre-grinding stage may contain abrasive grains A2, water-soluble polymer P2 and water. The third grinding liquid used in the third pre-grinding stage may contain abrasive grains A3, water-soluble polymer P3 and water. After grinding, a surface with high flatness and low defects can be effectively achieved.
如上所述,现有技术已公开多种研磨液(助剂),但这些研磨液(助剂)不同程度的存在如下缺陷:单一磨料硬度高易划伤,润湿性不足,无法快速在砷化镓表面铺展,造成研磨后TTV偏高,悬浮性不足,磨料快速沉降降低速率等。目前现有技术中的研磨液(助剂)存在种种缺陷,难以满足要求日益提高的研磨需求。As mentioned above, the prior art has disclosed a variety of polishing liquids (additives), but these polishing liquids (additives) have the following defects to varying degrees: single abrasives are hard and easy to scratch, have insufficient wettability, cannot spread quickly on the surface of gallium arsenide, resulting in high TTV after polishing, insufficient suspension, and rapid sedimentation of abrasives that reduces the rate, etc. The polishing liquids (additives) in the prior art currently have various defects and are difficult to meet the increasingly demanding polishing needs.
因此,亟需开发一种高润湿、高分散、高悬浮、易清洗的研磨液,用于砷化镓研磨。Therefore, there is an urgent need to develop a high-wetting, high-dispersion, high-suspending, and easy-to-clean grinding fluid for gallium arsenide grinding.
发明内容Summary of the invention
本发明的目的在于,针对现有研磨助剂存在低润湿、低悬浮、不易清洗和分散性不足的问题,提出一种高润湿、高分散、高悬浮、易清洗的研磨助剂,该研磨助剂具有极高的表面动态润湿、渗透能力,不易产生泡沫,能快速在砷化镓表面铺展,并且能快速渗透到砷化镓表面的微裂缝中,形成劈裂效果,提升研磨效率;同时对磨料具有良好的分散和防沉作用,避免研磨过程中不同微粉和磨屑的团聚,能使不同种类磨料在研磨液中分布均匀,长久保持悬浮状态,研磨时砷化镓受力均匀,研磨速率快,研磨后表面粗糙度低,TTV低,平整度好,无明显划痕,且易清洗,表面无杂质残留。The purpose of the present invention is to provide a high-wetting, high-dispersing, high-suspending and easy-to-clean grinding aid in view of the problems of low wetting, low suspension, difficulty in cleaning and insufficient dispersibility of existing grinding aids. The grinding aid has extremely high surface dynamic wetting and penetration ability, is not easy to generate foam, can quickly spread on the surface of gallium arsenide, and can quickly penetrate into the micro cracks on the surface of gallium arsenide to form a splitting effect and improve the grinding efficiency; at the same time, it has a good dispersing and anti-settling effect on abrasives, avoids the agglomeration of different micropowders and grinding chips during the grinding process, can make different types of abrasives evenly distributed in the grinding liquid, keep a suspended state for a long time, gallium arsenide is evenly stressed during grinding, the grinding rate is fast, the surface roughness after grinding is low, the TTV is low, the flatness is good, there are no obvious scratches, and it is easy to clean, and there is no impurity residue on the surface.
为实现上述目的,本发明采用的技术方案是:一种高润湿、高分散、高悬浮、易清洗的研磨助剂,包括重量配比如下的各组分:To achieve the above object, the technical solution adopted by the present invention is: a high-wetting, high-dispersibility, high-suspendability, and easy-to-clean grinding aid, comprising the following components in weight proportions:
进一步地,所述分散剂为马来酸-丙烯酸共聚物、马来酸-烯烃共聚物、聚乙烯吡咯烷酮-乙烯咪唑共聚物、马来酸-丙烯酸均聚物和聚乙烯亚胺聚氧乙烯醚中的一种或几种。Furthermore, the dispersant is one or more of maleic acid-acrylic acid copolymer, maleic acid-olefin copolymer, polyvinyl pyrrolidone-vinylimidazole copolymer, maleic acid-acrylic acid homopolymer and polyethyleneimine polyoxyethylene ether.
进一步地,所述分散剂优选聚乙烯亚胺聚氧乙烯醚。Furthermore, the dispersant is preferably polyethyleneimine polyoxyethylene ether.
进一步地,所述马来酸-丙烯酸共聚物分子量为50000-70000。Furthermore, the molecular weight of the maleic acid-acrylic acid copolymer is 50,000-70,000.
进一步地,所述马来酸-丙烯酸共聚物分子量优选为50000-60000。Furthermore, the molecular weight of the maleic acid-acrylic acid copolymer is preferably 50,000-60,000.
进一步地,所述马来酸-烯烃共聚物分子量为5000-10000。Furthermore, the molecular weight of the maleic acid-olefin copolymer is 5000-10000.
进一步地,所述马来酸-烯烃共聚物分子量优选为5000-8000。Furthermore, the molecular weight of the maleic acid-olefin copolymer is preferably 5000-8000.
进一步地,所述聚乙烯吡咯烷酮-乙烯咪唑共聚物分子量为5000-20000。Furthermore, the molecular weight of the polyvinyl pyrrolidone-vinylimidazole copolymer is 5000-20000.
进一步地,所述聚乙烯吡咯烷酮-乙烯咪唑共聚物分子量优选为5000-10000。Furthermore, the molecular weight of the polyvinyl pyrrolidone-vinylimidazole copolymer is preferably 5000-10000.
进一步地,所述马来酸-丙烯酸均聚物分子量为3000-10000。Furthermore, the molecular weight of the maleic acid-acrylic acid homopolymer is 3000-10000.
进一步地,所述马来酸-丙烯酸均聚物分子量优选为6000-9000。Furthermore, the molecular weight of the maleic acid-acrylic acid homopolymer is preferably 6000-9000.
进一步地,所述聚乙烯亚胺聚氧乙烯醚分子量为30000-60000。Furthermore, the molecular weight of the polyethyleneimine polyoxyethylene ether is 30,000-60,000.
进一步地,所述聚乙烯亚胺聚氧乙烯醚分子量优选为40000-50000。Furthermore, the molecular weight of the polyethyleneimine polyoxyethylene ether is preferably 40,000-50,000.
进一步地,所述分散剂为1-3份。Furthermore, the dispersant is 1-3 parts.
进一步地,所述防沉剂为羟乙基纤维素、碱溶胀型聚氨酯、碱溶胀性丙烯酸聚合物和聚乙烯醇中的一种或几种。Furthermore, the anti-settling agent is one or more of hydroxyethyl cellulose, alkali-swellable polyurethane, alkali-swellable acrylic polymer and polyvinyl alcohol.
进一步地,所述防沉剂优选碱溶胀性丙烯酸聚合物。Furthermore, the anti-settling agent is preferably an alkali-swellable acrylic polymer.
进一步地,所述羟乙基纤维素分子量为10000-100000。Furthermore, the molecular weight of the hydroxyethyl cellulose is 10,000-100,000.
进一步地,所述羟乙基纤维素分子量优选为50000-100000。Furthermore, the molecular weight of the hydroxyethyl cellulose is preferably 50,000-100,000.
进一步地,所述碱溶胀型聚氨酯分子量为3000-10000。Furthermore, the molecular weight of the alkali-swellable polyurethane is 3000-10000.
进一步地,所述碱溶胀型聚氨酯分子量优选为3000-6000。Furthermore, the molecular weight of the alkali-swellable polyurethane is preferably 3000-6000.
进一步地,所述碱溶胀性丙烯酸聚合物分子量为3000-10000。Furthermore, the molecular weight of the alkali-swellable acrylic polymer is 3,000-10,000.
进一步地,所述碱溶胀性丙烯酸聚合物分子量优选为3000-5000。Furthermore, the molecular weight of the alkali-swellable acrylic polymer is preferably 3000-5000.
进一步地,所述聚乙烯醇分子量为50000-200000。Furthermore, the molecular weight of the polyvinyl alcohol is 50,000-200,000.
进一步地,所述聚乙烯醇分子量优选为50000-100000。Furthermore, the molecular weight of the polyvinyl alcohol is preferably 50,000-100,000.
进一步地,所述防沉剂为0.1-1份。Furthermore, the anti-settling agent is 0.1-1 part.
进一步地,所述电荷斥力剂是含有多氨基结构的阳离子络合剂。Furthermore, the charge repulsive agent is a cationic complexing agent containing a polyamino structure.
进一步地,所述电荷斥力剂为二乙烯三胺、三乙烯四胺、三亚乙基四胺、四乙基五胺、DL-氨基丙二醇、氨基戊醇、N-(3-氨基丙基)二乙醇胺、二环己胺、异丙醇胺和二甘醇胺中一种或几种。Furthermore, the charge repulsive agent is one or more of diethylenetriamine, triethylenetetramine, triethylenetetramine, tetraethylenepentamine, DL-aminopropylene glycol, aminopentanol, N-(3-aminopropyl)diethanolamine, dicyclohexylamine, isopropanolamine and diglycolamine.
进一步地,所述电荷斥力剂优选三乙烯四胺。Furthermore, the charge repulsive agent is preferably triethylenetetramine.
进一步地,所述电荷斥力剂为1-3份。Furthermore, the charge repulsion agent is 1-3 parts.
进一步地,所述分散剂、防沉剂和电荷斥力剂的质量比为10-1:1:10-1。Furthermore, the mass ratio of the dispersant, the anti-settling agent and the charge repulsion agent is 10-1:1:10-1.
进一步地,所述分散剂、防沉剂和电荷斥力剂的质量比优选为4-1:1:5-1。Furthermore, the mass ratio of the dispersant, the anti-settling agent and the charge repulsion agent is preferably 4-1:1:5-1.
进一步地,所述分散剂、防沉剂和电荷斥力剂的质量比最优选为4:1:4。Furthermore, the mass ratio of the dispersant, the anti-settling agent and the charge repulsion agent is most preferably 4:1:4.
本发明防沉剂、分散剂和电荷斥力剂协同作用,利用防沉剂中聚合物的羟基、羧基等官能团,与分散剂中的氨基、羟基基团等形成强烈的氢键作用,从而在整个研磨液体系内形成触变网格结构,并通过吸附缠绕作用,将磨料(氧化铝、二氧化硅和氧化锆)包覆在形成的空间网格中,使其在长时间静置过程中,保持完全分散和悬浮状态;由于磨料表面带有负电荷,能够吸附带氨基的正电荷斥力剂,形成致密双电层包覆结构,增强磨料间的静电斥力,促进磨料和磨屑粒子充分分散,而在研磨剪切作用下,氢键作用消失,磨料和磨屑粒子依然保持分散状态,保证磨料可以快速铺展在研磨盘面上,且分散均匀、不易团聚,有效增加研磨液的使用寿命,提高研磨效率。The anti-settling agent, dispersant and charge repulsive agent of the present invention work synergistically, and utilize functional groups such as hydroxyl and carboxyl groups of the polymer in the anti-settling agent to form strong hydrogen bonding with amino groups and hydroxyl groups in the dispersant, thereby forming a thixotropic grid structure in the entire grinding liquid system, and coating the abrasives (aluminum oxide, silicon dioxide and zirconium oxide) in the formed space grid through adsorption and entanglement, so that the abrasives can maintain a completely dispersed and suspended state during long-term static standing; because the surface of the abrasive carries negative charge, it can adsorb the positive charge repulsive agent with amino groups to form a dense double electric layer coating structure, enhance the electrostatic repulsion between the abrasives, promote the full dispersion of the abrasives and the wear debris particles, and under the grinding shearing action, the hydrogen bonding action disappears, the abrasives and the wear debris particles still maintain a dispersed state, ensure that the abrasives can be quickly spread on the grinding disc surface, and are evenly dispersed and not easy to agglomerate, effectively increase the service life of the grinding liquid, and improve the grinding efficiency.
进一步地,所述润湿剂为脂肪醇聚氧乙烯醚、脂肪醇乙氧基化合物TERIC168、烷基酚聚氧乙烯醚、壬基酚聚氧乙烯醚和辛基酚聚氧乙烯醚中的一种或几种。Furthermore, the wetting agent is one or more of fatty alcohol polyoxyethylene ether, fatty alcohol ethoxylate TERIC168, alkylphenol polyoxyethylene ether, nonylphenol polyoxyethylene ether and octylphenol polyoxyethylene ether.
进一步地,所述脂肪醇聚氧乙烯醚为脂肪醇聚氧乙烯醚AEO-9、脂肪醇聚氧乙烯醚AEO-7和脂肪醇聚氧乙烯醚AEO-12中的一种或几种。Furthermore, the fatty alcohol polyoxyethylene ether is one or more of fatty alcohol polyoxyethylene ether AEO-9, fatty alcohol polyoxyethylene ether AEO-7 and fatty alcohol polyoxyethylene ether AEO-12.
进一步地,所述烷基酚聚氧乙烯醚为烷基酚聚氧乙烯醚TX-10和/或烷基酚聚氧乙烯醚TX-11。Furthermore, the alkylphenol polyoxyethylene ether is alkylphenol polyoxyethylene ether TX-10 and/or alkylphenol polyoxyethylene ether TX-11.
进一步地,所述壬基酚聚氧乙烯醚为壬基酚聚氧乙烯醚NP-6、壬基酚聚氧乙烯醚NP-7和壬基酚聚氧乙烯醚NP-9中的一种或几种。Furthermore, the nonylphenol polyoxyethylene ether is one or more of nonylphenol polyoxyethylene ether NP-6, nonylphenol polyoxyethylene ether NP-7 and nonylphenol polyoxyethylene ether NP-9.
进一步地,所述辛基酚聚氧乙烯醚为辛基酚聚氧乙烯醚TRITONX-45、辛基酚聚氧乙烯醚TRITONX-100和辛基酚聚氧乙烯醚TRITONX-15中的一种或几种。Furthermore, the octylphenol polyoxyethylene ether is one or more of octylphenol polyoxyethylene ether TRITONX-45, octylphenol polyoxyethylene ether TRITONX-100 and octylphenol polyoxyethylene ether TRITONX-15.
进一步地,所述润湿剂优选烷基酚聚氧乙烯醚TX-10。Furthermore, the wetting agent is preferably alkylphenol polyoxyethylene ether TX-10.
进一步地,所述润湿剂为1-3份。Furthermore, the wetting agent is 1-3 parts.
进一步地,所述消泡剂选自二甲基硅氧烷、乙二醇醚化聚二甲基硅氧烷、丙二醇醚化聚二甲基硅氧烷和炔二醇聚二甲基硅氧烷中的一种或几种。Furthermore, the defoaming agent is selected from one or more of dimethylsiloxane, ethylene glycol etherified polydimethylsiloxane, propylene glycol etherified polydimethylsiloxane and acetylene glycol polydimethylsiloxane.
进一步地,所述消泡剂优选丙二醇醚化聚二甲基硅氧烷。Furthermore, the defoaming agent is preferably propylene glycol etherified polydimethylsiloxane.
进一步地,所述消泡剂为0.1-0.5份。Furthermore, the defoaming agent is 0.1-0.5 parts.
进一步地,所述润湿剂与消泡剂的比例为1-20:1。Furthermore, the ratio of the wetting agent to the defoaming agent is 1-20:1.
进一步地,所述润湿剂与消泡剂的比例优选为1-5:1。Furthermore, the ratio of the wetting agent to the defoaming agent is preferably 1-5:1.
进一步地,所述润湿剂与消泡剂的比例更优选为4:1。Furthermore, the ratio of the wetting agent to the defoaming agent is more preferably 4:1.
本发明采用具有极低动态表面张力的润湿剂和消泡剂复配方案,有效提升研磨液的动态润湿和渗透能力,保证研磨过程中磨料可以快速在研磨盘面铺展,研磨液可以快速渗透至砷化镓片表面微裂缝中,提升研磨速率和研磨均匀性,同时结合消泡剂的快速消泡和有效抑泡能力,保证研磨液在搅拌和研磨过程中不会产生泡沫,避免泡沫降低磨料的有效接触面积,导致研磨效率降低;并且两亲性溶剂可以有效将消泡剂均匀分散在研磨液体系中,在高速剪切搅拌的条件下加入消泡剂,快速分散乳化至微乳液,促进消泡剂形成微乳液稳定分散,不破乳聚沉,确保研磨液长时间保持稳定,避免消泡剂分层和析出。The invention adopts a compounding scheme of a wetting agent and a defoaming agent with extremely low dynamic surface tension, effectively improves the dynamic wetting and penetration ability of the grinding liquid, ensures that the abrasive can be quickly spread on the grinding disk surface during the grinding process, and the grinding liquid can quickly penetrate into the micro cracks on the surface of the gallium arsenide sheet, thereby improving the grinding rate and grinding uniformity. At the same time, combined with the rapid defoaming and effective foam suppression capabilities of the defoaming agent, it is ensured that the grinding liquid will not generate foam during the stirring and grinding process, and the foam is prevented from reducing the effective contact area of the abrasive, resulting in reduced grinding efficiency; and the amphiphilic solvent can effectively and uniformly disperse the defoaming agent in the grinding liquid system, and the defoaming agent is added under the condition of high-speed shear stirring, and is quickly dispersed and emulsified into a microemulsion, so as to promote the defoaming agent to form a microemulsion and stably disperse, without demulsification and coagulation, thereby ensuring that the grinding liquid remains stable for a long time, and avoiding stratification and precipitation of the defoaming agent.
进一步地,所述两亲性溶剂是具有亲油基团和亲水基团的水溶性溶剂。Furthermore, the amphiphilic solvent is a water-soluble solvent having a lipophilic group and a hydrophilic group.
进一步地,所述两亲性溶剂为乙二醇单丁醚、丙二醇丁醚、三乙二醇丁醚、乙二醇己醚、丙二醇甲醚、乙二醇叔丁醚、乙氧基丙酸乙酯、二乙二醇叔丁醚醋酸酯和丙二醇苯醚中的一种或几种。Furthermore, the amphiphilic solvent is one or more of ethylene glycol monobutyl ether, propylene glycol butyl ether, triethylene glycol butyl ether, ethylene glycol hexyl ether, propylene glycol methyl ether, ethylene glycol tert-butyl ether, ethyl ethoxypropionate, diethylene glycol tert-butyl ether acetate and propylene glycol phenyl ether.
进一步地,所述两亲性溶剂优选三乙二醇丁醚。Furthermore, the amphiphilic solvent is preferably triethylene glycol butyl ether.
进一步地,所述两亲性溶剂为50-60份。Furthermore, the amphiphilic solvent is 50-60 parts.
本发明的另一个目的还公开了一种高润湿、高分散、高悬浮、易清洗的研磨助剂的制备方法,包括以下步骤:Another object of the present invention is to disclose a method for preparing a high-wetting, high-dispersion, high-suspending and easy-to-clean grinding aid, comprising the following steps:
步骤(1):向搅拌釜中加入两亲性溶剂,然后加入分散剂使其完全溶解,再加入润湿剂和电荷斥力剂,使得润湿剂和电荷斥力剂更易分散开,从而制得澄清透明溶液;Step (1): adding an amphiphilic solvent to a stirred tank, then adding a dispersant to completely dissolve the amphiphilic solvent, and then adding a wetting agent and a charge repulsive agent to make the wetting agent and the charge repulsive agent more easily dispersed, thereby obtaining a clear and transparent solution;
步骤(2):将步骤(1)得到的溶液,在搅拌下加入消泡剂,开启高速分散搅拌,通过高剪切作用将消泡剂充分分散开,形成可溶性微乳液,均匀分布在体系中;Step (2): adding a defoamer to the solution obtained in step (1) under stirring, starting high-speed dispersing stirring, and fully dispersing the defoamer through high shearing to form a soluble microemulsion that is evenly distributed in the system;
步骤(3):在搅拌下,向步骤(2)得到的溶液中加入防沉剂,搅拌混合均匀,制备得到润湿、高分散、高悬浮、易清洗的研磨助剂。Step (3): adding an anti-settling agent to the solution obtained in step (2) under stirring, stirring and mixing evenly, and preparing a wetting, highly dispersed, highly suspended, and easily cleanable grinding aid.
进一步地,步骤(1)所述搅拌时间为10-20min。Furthermore, the stirring time in step (1) is 10-20 min.
进一步地,步骤(2)在50-100r/min搅拌下加入消泡剂。Furthermore, in step (2), a defoaming agent is added under stirring at 50-100 r/min.
进一步地,步骤(2)所述高速分散搅拌的转速为500-2000r/min。Furthermore, the rotation speed of the high-speed dispersing stirring in step (2) is 500-2000 r/min.
进一步地,步骤(2)所述高速分散搅拌的转速优选为1000-2000r/min。Furthermore, the rotation speed of the high-speed dispersing stirring in step (2) is preferably 1000-2000 r/min.
进一步地,步骤(2)所述高速分散搅拌时间为10-30min。Furthermore, the high-speed dispersing stirring time in step (2) is 10-30 minutes.
进一步地,步骤(2)所述高速分散搅拌时间优选为10-20min。Furthermore, the high-speed dispersing stirring time in step (2) is preferably 10-20 min.
进一步地,步骤(3)所述搅拌时间为10-30min。Furthermore, the stirring time in step (3) is 10-30 min.
进一步地,步骤(3)所述搅拌时间优选为10-20min。Furthermore, the stirring time in step (3) is preferably 10-20 min.
本发明的另一个目的还公开了一种高润湿、高分散、高悬浮、易清洗的研磨助剂在硬脆材料研磨液领域的用途。Another object of the present invention is to disclose the use of a high-wetting, high-dispersing, high-suspending and easy-to-clean grinding aid in the field of hard and brittle material grinding liquid.
进一步地,所述硬脆材料为磷化镓、砷化镓、磷化铟或铝镓砷。Furthermore, the hard and brittle material is gallium phosphide, gallium arsenide, indium phosphide or aluminum gallium arsenide.
进一步地,所述硬脆材料优选砷化镓。Furthermore, the hard and brittle material is preferably gallium arsenide.
本发明的另一个目的还公开了一种研磨液,包括上述高润湿、高分散、高悬浮、易清洗的研磨助剂和磨料。Another object of the present invention is to disclose a grinding liquid, comprising the above-mentioned high-wetting, high-dispersion, high-suspending, and easy-to-clean grinding aid and abrasive.
进一步地,所述研磨助剂和磨料的用量比为8-1:1。Furthermore, the amount ratio of the grinding aid to the abrasive is 8-1:1.
进一步地,所述研磨助剂和磨料的用量比优选为5-2:1。Furthermore, the ratio of the grinding aid to the abrasive is preferably 5-2:1.
进一步地,所述磨料为二氧化硅、氧化铝和氧化锆中的一种或几种。Furthermore, the abrasive is one or more of silicon dioxide, aluminum oxide and zirconium oxide.
进一步地,所述磨料优选二氧化硅、氧化铝和氧化锆。Furthermore, the abrasive is preferably silicon dioxide, aluminum oxide and zirconium oxide.
进一步地,所述磨料包括重量配比如下的各组分:Furthermore, the abrasive comprises the following components in weight proportion:
二氧化硅 1-5份;Silicon dioxide 1-5 parts;
氧化铝 10-30份;Alumina 10-30 parts;
氧化锆 1-5份。Zirconium oxide 1-5 parts.
进一步地,所述二氧化硅粒径D50=0.5-10μm。Furthermore, the silica particle size D50=0.5-10 μm.
进一步地,所述二氧化硅粒径优选D50=0.5-5μm。Furthermore, the silica particle size is preferably D50=0.5-5 μm.
进一步地,所述二氧化硅为3-5份。Furthermore, the silicon dioxide is 3-5 parts.
进一步地,所述氧化铝选自白刚玉、棕刚玉和半脆刚玉中的一种或几种。Furthermore, the aluminum oxide is selected from one or more of white corundum, brown corundum and semi-brittle corundum.
进一步地,所述氧化铝优选白刚玉。Furthermore, the aluminum oxide is preferably white corundum.
进一步地,所述白刚玉粒径D50=5-10μm。Furthermore, the particle size of the white corundum is D50=5-10 μm.
进一步地,所述白刚玉粒径优选D50=8-10μm。Furthermore, the particle size of the white corundum is preferably D50=8-10 μm.
进一步地,所述棕刚玉粒径D50=5-20μm。Furthermore, the brown corundum particle size D50 is 5-20 μm.
进一步地,所述脆刚玉粒径D50=5-20μm。Furthermore, the particle size of the brittle corundum is D50=5-20 μm.
进一步地,所述氧化铝为10-20份。Furthermore, the aluminum oxide is 10-20 parts.
进一步地,所述氧化锆粒径D50=5-10μm。Furthermore, the zirconium oxide particle size D50=5-10 μm.
进一步地,所述氧化锆粒径优选D50=5-8μm。Furthermore, the zirconium oxide particle size is preferably D50=5-8 μm.
进一步地,所述氧化锆为1-3份。Furthermore, the zirconium oxide is 1-3 parts.
本发明研磨液包含不规则形貌的大尺寸高硬度氧化铝、氧化锆和小尺寸低硬度蠕虫状形貌的二氧化硅复合磨料,将小尺寸二氧化硅包覆在大尺寸氧化铝和氧化锆表面,在氧化铝和氧化锆表面形成软质缓冲层,优选避免研磨过程中大尺寸高硬度磨料的棱角直接与砷化镓表面硬接触,在保证研磨效率同时,避免产生深划痕;同时纳米级二氧化硅可以与砷化镓表面腐蚀层的凸出部分发生化学机械抛光作用,修复腐蚀坑和浅划痕,进一步降低研磨后砷化镓的表面粗糙度。The grinding liquid of the present invention comprises large-sized high-hardness aluminum oxide, zirconium oxide and small-sized low-hardness silicon dioxide composite abrasive with irregular morphology, and the small-sized silicon dioxide is coated on the surface of large-sized aluminum oxide and zirconium oxide to form a soft buffer layer on the surface of aluminum oxide and zirconium oxide. It is preferred to avoid direct hard contact between the edges of the large-sized high-hardness abrasive and the surface of gallium arsenide during the grinding process, so as to avoid deep scratches while ensuring the grinding efficiency. At the same time, the nano-sized silicon dioxide can undergo chemical mechanical polishing with the protruding part of the corrosion layer on the surface of the gallium arsenide to repair the corrosion pits and shallow scratches, and further reduce the surface roughness of the gallium arsenide after grinding.
本发明的另一个目的还公开了一种研磨液的制备方法,包括以下步骤:在搅拌下向高润湿、高分散、高悬浮、易清洗的研磨助剂中加入磨料,搅拌混合均匀,植被得到研磨液。Another object of the present invention is to disclose a method for preparing a grinding liquid, comprising the following steps: adding abrasive to a high-wetting, high-dispersing, high-suspending, and easy-to-clean grinding aid under stirring, stirring and mixing evenly, and obtaining a grinding liquid.
进一步地,在50-100r/min搅拌下加入磨料。Further, abrasive is added under stirring at 50-100 r/min.
进一步地,所述搅拌时间为10-60min。Furthermore, the stirring time is 10-60 min.
进一步地,所述搅拌时间优选为30-60min。Furthermore, the stirring time is preferably 30-60 min.
本发明的另一个目的还公开了一种研磨液在硬脆材料研磨领域的用途。Another object of the present invention is to disclose a use of a grinding liquid in the field of grinding hard and brittle materials.
进一步地,所述硬脆材料为磷化镓、砷化镓、磷化铟或铝镓砷。Furthermore, the hard and brittle material is gallium phosphide, gallium arsenide, indium phosphide or aluminum gallium arsenide.
进一步地,所述硬脆材料优选砷化镓。Furthermore, the hard and brittle material is preferably gallium arsenide.
进一步地,采用研磨液研磨砷化镓,包括以下研磨工艺:Further, the gallium arsenide is ground with a grinding liquid, including the following grinding processes:
压力:250kg,转速:30rpm,流量:0.8L/min;盘面温度:20-30℃;研磨时间:10min。Pressure: 250kg, rotation speed: 30rpm, flow rate: 0.8L/min; disk temperature: 20-30℃; grinding time: 10min.
本发明高润湿、高分散、高悬浮、易清洗的研磨助剂、制备方法、用途及包含其的研磨液,与现有技术相比较具有以下优点:The high-wetting, high-dispersion, high-suspending, easy-to-clean grinding aid, preparation method, use and grinding liquid containing the same of the present invention have the following advantages compared with the prior art:
1)、本发明防沉剂、分散剂和电荷斥力剂协同作用,利用防沉剂中聚合物的羟基、羧基等官能团,与分散剂中的氨基、羟基基团等形成强烈的氢键作用,从而在整个研磨液体系内形成触变网格结构,并通过吸附缠绕作用,将磨料(氧化铝、二氧化硅和氧化锆)包覆在形成的空间网格中,使其在长时间静置过程中,保持完全分散和悬浮状态;由于磨料表面带有负电荷,能够吸附带氨基的正电荷斥力剂,形成致密双电层包覆结构,增强磨料间的静电斥力,促进磨料和磨屑粒子充分分散,而在研磨剪切作用下,氢键作用消失,磨料和磨屑粒子依然保持分散状态,保证磨料可以快速铺展在研磨盘面上,且分散均匀、不易团聚,有效增加研磨液的使用寿命,提高研磨效率。1) The anti-settling agent, dispersant and charge repulsion agent of the present invention work synergistically, and utilize the functional groups such as hydroxyl and carboxyl of the polymer in the anti-settling agent to form strong hydrogen bonding with the amino and hydroxyl groups in the dispersant, thereby forming a thixotropic grid structure in the entire grinding liquid system, and through the adsorption and entanglement effect, the abrasive (aluminum oxide, silicon dioxide and zirconium oxide) is coated in the formed space grid, so that it can maintain a completely dispersed and suspended state during a long period of static standing; because the surface of the abrasive carries a negative charge, it can adsorb the positive charge repulsion agent with amino groups to form a dense double electric layer coating structure, enhance the electrostatic repulsion between the abrasives, and promote the full dispersion of the abrasives and the wear debris particles. Under the grinding shearing action, the hydrogen bonding effect disappears, and the abrasives and the wear debris particles still remain in a dispersed state, ensuring that the abrasive can be quickly spread on the grinding disc surface, and is evenly dispersed and not easy to agglomerate, effectively increasing the service life of the grinding liquid and improving the grinding efficiency.
2)、本发明采用具有极低动态表面张力的润湿剂和消泡剂复配方案,有效提升研磨液的动态润湿和渗透能力,保证研磨过程中磨料可以快速在研磨盘面铺展,研磨液可以快速渗透至砷化镓片表面微裂缝中,提升研磨速率和研磨均匀性,同时结合消泡剂的快速消泡和有效抑泡能力,保证研磨液在搅拌和研磨过程中不会产生泡沫,避免泡沫降低磨料的有效接触面积,导致研磨效率降低;并且两亲性溶剂可以有效将消泡剂均匀分散在研磨液体系中,在高速剪切搅拌的条件下加入消泡剂,快速分散乳化至微乳液,促进消泡剂形成微乳液稳定分散,不破乳聚沉,确保研磨液长时间保持稳定,避免消泡剂分层和析出。2) The present invention adopts a wetting agent and a defoaming agent compounding scheme with extremely low dynamic surface tension, which effectively improves the dynamic wetting and penetration ability of the grinding liquid, ensures that the abrasive can be quickly spread on the grinding disk surface during the grinding process, and the grinding liquid can quickly penetrate into the micro cracks on the surface of the gallium arsenide sheet, thereby improving the grinding rate and grinding uniformity. At the same time, combined with the rapid defoaming and effective foam suppression capabilities of the defoaming agent, it is ensured that the grinding liquid will not generate foam during the stirring and grinding process, thereby avoiding the foam from reducing the effective contact area of the abrasive and causing a decrease in grinding efficiency; and the amphiphilic solvent can effectively disperse the defoaming agent evenly in the grinding liquid system, add the defoaming agent under high-speed shear stirring conditions, quickly disperse and emulsify it into a microemulsion, promote the defoaming agent to form a microemulsion and stably disperse, without demulsification and coagulation, ensure that the grinding liquid remains stable for a long time, and avoid stratification and precipitation of the defoaming agent.
3)、本发明研磨液包含不规则形貌的大尺寸高硬度氧化铝、氧化锆和小尺寸低硬度蠕虫状形貌的二氧化硅复合磨料,将小尺寸二氧化硅包覆在大尺寸氧化铝和氧化锆表面,在氧化铝和氧化锆表面形成软质缓冲层,优选避免研磨过程中大尺寸高硬度磨料的棱角直接与砷化镓表面硬接触,在保证研磨效率同时,避免产生深划痕;同时纳米级二氧化硅可以与砷化镓表面腐蚀层的凸出部分发生化学机械抛光作用,修复腐蚀坑和浅划痕,进一步降低研磨后砷化镓的表面粗糙度。3) The grinding liquid of the present invention comprises irregularly shaped large-sized high-hardness aluminum oxide, zirconium oxide and small-sized low-hardness worm-like silicon dioxide composite abrasives, and the small-sized silicon dioxide is coated on the surface of the large-sized aluminum oxide and zirconium oxide to form a soft buffer layer on the surface of the aluminum oxide and zirconium oxide. It is preferred to avoid direct hard contact between the edges of the large-sized high-hardness abrasive and the surface of the gallium arsenide during the grinding process, thereby ensuring the grinding efficiency and avoiding the generation of deep scratches. At the same time, the nano-sized silicon dioxide can undergo chemical mechanical polishing with the protruding part of the corrosion layer on the surface of the gallium arsenide to repair the corrosion pits and shallow scratches, and further reduce the surface roughness of the gallium arsenide after grinding.
综上,本发明研磨助剂具有极高的表面动态润湿、渗透能力,接触角可低至25-30°,表面张力小于30dyn/cm,同时采取复合消泡技术使得包含其的研磨液在搅拌和研磨中几乎不产生泡沫,可以快速在砷化镓表面铺展,并且可以快速渗透到砷化镓表面的微裂缝中,形成劈裂效果,提升研磨效率;同时研磨助剂对氧化铝、二氧化硅、氧化锆等混合磨料具有良好的分散和防沉作用,能避免研磨过程中不同微粉和磨屑的团聚,能使不同种类磨料在研磨液中分布均匀,长久保持悬浮状态。采用本发明研磨液研磨时砷化镓受力均匀,研磨速率快,研磨后表面粗糙度低,TTV低,平整度好且无明显划痕,易清洗,表面无杂质残留。因此,本发明研磨助剂和研磨液具有良好的应用前景和大规模工业化推广潜力。In summary, the grinding aid of the present invention has extremely high surface dynamic wetting and penetration ability, the contact angle can be as low as 25-30°, the surface tension is less than 30dyn/cm, and the composite defoaming technology is adopted so that the grinding liquid containing it produces almost no foam during stirring and grinding, and can quickly spread on the surface of gallium arsenide, and can quickly penetrate into the micro cracks on the surface of gallium arsenide to form a splitting effect, thereby improving the grinding efficiency; at the same time, the grinding aid has a good dispersing and anti-settling effect on mixed abrasives such as aluminum oxide, silicon dioxide, and zirconium oxide, which can avoid the agglomeration of different micropowders and grinding chips during the grinding process, and can make different types of abrasives evenly distributed in the grinding liquid and keep suspended for a long time. When the grinding liquid of the present invention is used for grinding, gallium arsenide is subjected to uniform force, the grinding rate is fast, the surface roughness after grinding is low, the TTV is low, the flatness is good and there are no obvious scratches, it is easy to clean, and there is no impurity residue on the surface. Therefore, the grinding aid and grinding liquid of the present invention have good application prospects and large-scale industrial promotion potential.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为采用对比例1研磨的砷化镓冲水后表面脏污情况,显微镜下放大200倍;FIG1 is a diagram showing the dirty state of the surface of gallium arsenide ground in Comparative Example 1 after being rinsed with water, magnified 200 times under a microscope;
图2为采用实施例13研磨的砷化镓冲水后表面脏污情况,显微镜下放大200倍;FIG2 shows the dirty state of the surface of gallium arsenide ground in Example 13 after being rinsed with water, magnified 200 times under a microscope;
图3为研磨液放置1月后的悬浮性对比照片,左边是对比例1,右边是实施例13;FIG3 is a comparison photo of the suspension properties of the polishing liquid after being placed for 1 month, with the left side being Comparative Example 1 and the right side being Example 13;
图4为采用对比例1研磨后的砷化镓在显微镜下放大200倍观察的表面划伤照片;FIG4 is a photograph of surface scratches of gallium arsenide after grinding in Comparative Example 1 observed under a microscope at a magnification of 200 times;
图5为采用实施例13研磨后的砷化镓在显微镜下放大200倍观察的表面划伤照片。FIG5 is a photograph of the surface scratches of the gallium arsenide after grinding in Example 13 observed under a microscope at a magnification of 200 times.
具体实施方式DETAILED DESCRIPTION
以下结合实施例对本发明进一步说明:The present invention is further described below in conjunction with embodiments:
实施例1-12Examples 1-12
实施例1-12公开了多种高润湿、高分散、高悬浮、易清洗的研磨助剂,其包含的组分及重量配比如表1所示,其制备方法如下:Examples 1-12 disclose a variety of high-wetting, high-dispersion, high-suspending, and easy-to-clean grinding aids, the components and weight ratios of which are shown in Table 1, and the preparation methods thereof are as follows:
步骤(1):向搅拌釜中依次加入两亲性溶剂、分散剂、润湿剂和电荷斥力剂,搅拌20min混合均匀,制得澄清透明溶液。Step (1): add an amphiphilic solvent, a dispersant, a wetting agent and a charge repulsion agent into a stirring tank in sequence, stir for 20 minutes to mix evenly, and obtain a clear and transparent solution.
步骤(2):将步骤(1)得到的溶液,在50/min搅拌下加入消泡剂,开启高速分散搅拌将有机硅消泡剂充分分散开形成可溶性微乳液,1000r/min搅拌30min至形成均匀稳定的溶液。Step (2): add a defoamer to the solution obtained in step (1) under stirring at 50/min, start high-speed dispersion stirring to fully disperse the organosilicon defoamer to form a soluble microemulsion, and stir at 1000r/min for 30min to form a uniform and stable solution.
步骤(3):在1000r/min下,向步骤(2)得到的溶液中加入防沉剂,搅拌30min,直至混合均匀。Step (3): add an anti-settling agent to the solution obtained in step (2) at 1000 r/min and stir for 30 min until the mixture is uniformly mixed.
表1实施例1-12高润湿、高分散、高悬浮、易清洗的研磨助剂的组分及含量Table 1 Components and contents of high wetting, high dispersibility, high suspension and easy-to-clean grinding aids of Examples 1-12
实施例1-12所述研磨助剂的表征:将研磨助剂稀释至3%后,pH为8-10,电导率500-1500μs/cm,表面张力25-30dyn/cm。Characterization of the grinding aids described in Examples 1-12: After the grinding aids were diluted to 3%, the pH was 8-10, the conductivity was 500-1500 μs/cm, and the surface tension was 25-30 dyn/cm.
实施例13-24Examples 13-24
实施例13-24公开了多种研磨液,其包含的组分及重量配比如表2所示,其制备方法如下:Examples 13-24 disclose a variety of polishing liquids, the components and weight ratios of which are shown in Table 2, and the preparation methods thereof are as follows:
步骤(1):向搅拌釜中依次加入两亲性溶剂、分散剂、润湿剂和电荷斥力剂,搅拌20min混合均匀,制得澄清透明溶液。Step (1): add an amphiphilic solvent, a dispersant, a wetting agent and a charge repulsion agent into a stirring tank in sequence, stir for 20 minutes to mix evenly, and obtain a clear and transparent solution.
步骤(2):将步骤(1)得到的溶液,在100r/min搅拌下加入消泡剂,开启高速分散搅拌将有机硅消泡剂充分分散开形成可溶性微乳液,1000r/min搅拌30min至形成均匀稳定的溶液。Step (2): add a defoamer to the solution obtained in step (1) while stirring at 100 r/min, start high-speed dispersing stirring to fully disperse the organosilicon defoamer to form a soluble microemulsion, and stir at 1000 r/min for 30 minutes until a uniform and stable solution is formed.
步骤(3):在1000r/min下,向步骤(2)得到的溶液中加入防沉剂,搅拌30min,直至混合均匀。Step (3): add an anti-settling agent to the solution obtained in step (2) at 1000 r/min and stir for 30 min until the mixture is uniformly mixed.
步骤(4):在1000r/min下加入氧化铝、氧化锆和二氧化硅磨料,搅拌60min,形成混合均匀的悬浮液,完成研磨液的制备。Step (4): adding alumina, zirconia and silica abrasives at 1000 r/min and stirring for 60 min to form a uniformly mixed suspension, thereby completing the preparation of the grinding liquid.
表2实施例13-24研磨液的组分及重量配比Table 2 Components and weight ratios of the grinding fluids of Examples 13-24
对比例1-8Comparative Examples 1-8
对比例1-8公开了多种研磨液,其包含的组分和重量配比如表3所示,其制备方法与实施例13相同。Comparative Examples 1-8 disclose a variety of grinding liquids, the components and weight ratios of which are shown in Table 3, and the preparation methods are the same as those of Example 13.
表3对比例1-8研磨液的组分和重量配比Table 3 Components and weight ratios of the grinding fluids of Comparative Examples 1-8
性能测试Performance Testing
下面,对上述各个研磨液的各种性能进行测试,具体如下。Next, various properties of the above-mentioned polishing fluids were tested, as follows.
图1为采用对比例1研磨的砷化镓冲水后表面脏污情况,显微镜下放大200倍,图2为采用实施例13研磨的砷化镓冲水后表面脏污情况,显微镜下放大200倍。可见,实施例13表面干净无任何颗粒或有机物残留,对比例1表面则有少量残留颗粒脏污(箭头所指处为脏污)。Figure 1 shows the surface dirtiness of gallium arsenide after being rinsed with water after being ground by comparative example 1, magnified 200 times under a microscope, and Figure 2 shows the surface dirtiness of gallium arsenide after being rinsed with water after being ground by example 13, magnified 200 times under a microscope. It can be seen that the surface of example 13 is clean without any particles or organic matter residue, while the surface of comparative example 1 has a small amount of residual particles and dirt (the place indicated by the arrow is dirt).
图3为研磨液放置1月后的悬浮性对比照片,左边是对比例1磨料完全沉底,右边是实施例13仍然保持完全悬浮状态。FIG3 is a comparison photo of the suspension properties of the grinding liquid after being placed for one month. The left side shows that the abrasive in Example 1 completely sinks to the bottom, while the right side shows that the abrasive in Example 13 still remains completely suspended.
图4为采用对比例1研磨后的砷化镓在显微镜下放大200倍观察的表面划伤照片,图5为采用实施例13研磨后的砷化镓在显微镜下放大200倍观察的表面划伤照片。可见,对比例1有明显深划痕,实施例13无深划痕。Figure 4 is a photo of the surface scratches of the gallium arsenide after grinding in comparative example 1 observed under a microscope at a magnification of 200 times, and Figure 5 is a photo of the surface scratches of the gallium arsenide after grinding in example 13 observed under a microscope at a magnification of 200 times. It can be seen that comparative example 1 has obvious deep scratches, while example 13 has no deep scratches.
表4为实施例13-24和对比例1-8的性能测试数据,可见实施例13-24的研磨液具有高悬浮、高分散和高润性能,移除率快,研磨后砷化镓表面划伤低、粗糙度低、表面脏污少。Table 4 shows the performance test data of Examples 13-24 and Comparative Examples 1-8. It can be seen that the polishing liquids of Examples 13-24 have high suspension, high dispersion and high wetting properties, fast removal rate, low scratches, low roughness and less surface dirt on the gallium arsenide surface after polishing.
表4实施例13-24和对比例1-8的性能测试数据Table 4 Performance test data of Examples 13-24 and Comparative Examples 1-8
其中:in:
测试方法如下:The test method is as follows:
对上述实施例13-24和对比例1-8制备得到的研磨液,采用4寸砷化镓片进行研磨测试,对比移除率、TTV、TIR、Warp、Ra、最大划痕宽度、损伤层深度、表面脏污、悬浮性、接触角和表面张力。The polishing liquids prepared in the above Examples 13-24 and Comparative Examples 1-8 were tested on a 4-inch GaAs wafer to compare the removal rate, TTV, TIR, Warp, Ra, maximum scratch width, damage layer depth, surface dirt, suspension, contact angle and surface tension.
清洗后表面质量测试:先使用清洗液两段50℃超声清洗10min,再使用去离子水50℃超声清洗3min,吹干后,在光学显微镜下观察表面质量。Surface quality test after cleaning: first use the cleaning solution to perform two stages of ultrasonic cleaning at 50°C for 10 minutes, then use deionized water to perform ultrasonic cleaning at 50°C for 3 minutes, blow dry, and observe the surface quality under an optical microscope.
研磨后最大划痕宽度测试:将清洗后的砷化镓片,使用光学显微镜,在相同放大倍数和视野下,测试最大划痕宽度,分别测3次取平均值。Maximum scratch width test after grinding: Use an optical microscope to test the maximum scratch width of the cleaned GaAs wafer under the same magnification and field of view, and measure it three times to get the average value.
悬浮性测试:观察研磨液静置1个月后的悬浮性,是否分层。Suspension test: Observe the suspension of the grinding liquid after standing for 1 month to see if it is stratified.
接触角和表面张力测试:采用接触角仪测试研磨液在砷化镓表面30s时的接触角和表面张力。Contact angle and surface tension test: A contact angle meter was used to test the contact angle and surface tension of the polishing fluid on the gallium arsenide surface for 30 seconds.
研磨工艺:Grinding process:
研磨设备:研磨机;Grinding equipment: grinder;
砷化镓尺寸:4寸;GaAs size: 4 inches;
转速:30r/min;Speed: 30r/min;
压力:100kg/盘;Pressure: 100kg/plate;
盘面温度:30-40℃;Plate temperature: 30-40℃;
研磨液流量:0.9L/min;Grinding liquid flow rate: 0.9L/min;
研磨时间:20min。Grinding time: 20min.
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
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Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102311718A (en) * | 2011-04-26 | 2012-01-11 | 东莞市安美润滑科技有限公司 | Aqueous grinding fluid for ultrafine grinding of hard and brittle materials and its application method |
CN102766406A (en) * | 2012-06-25 | 2012-11-07 | 深圳市力合材料有限公司 | Polishing composition for removing surface defect of semiconductor silicon wafer and preparation method thereof |
CN103627328A (en) * | 2013-11-27 | 2014-03-12 | 常熟市劲力工具有限公司 | Oily diamond grinding fluid |
CN104592898A (en) * | 2015-01-04 | 2015-05-06 | 江苏中晶科技有限公司 | High-performance sapphire grinding fluid and preparation method thereof |
CN105273638A (en) * | 2015-10-14 | 2016-01-27 | 盐城工学院 | Anti-cleavage suspended grinding fluid for gallium oxide wafer and preparation method thereof |
CN107208007A (en) * | 2015-01-05 | 2017-09-26 | 恩特格里斯公司 | Composite and its application method after chemically mechanical polishing |
CN108699425A (en) * | 2016-01-19 | 2018-10-23 | 福吉米株式会社 | The grinding method of composition for polishing and silicon substrate |
CN109575818A (en) * | 2018-12-28 | 2019-04-05 | 天津洙诺科技有限公司 | A kind of low sodium polishing fluid and its preparation method and application |
CN109593472A (en) * | 2017-09-30 | 2019-04-09 | 优尔材料工业(深圳)有限公司 | diamond polishing solution and preparation method thereof |
CN110914958A (en) * | 2017-07-21 | 2020-03-24 | 福吉米株式会社 | Method for polishing substrate and polishing composition set |
CN111363520A (en) * | 2020-04-17 | 2020-07-03 | 深圳市朗纳研磨材料有限公司 | Grinding fluid and preparation method thereof |
CN111995983A (en) * | 2020-09-02 | 2020-11-27 | 中科孚迪科技发展有限公司 | Preparation method of grinding fluid for processing semiconductor wafer |
CN114015360A (en) * | 2021-11-23 | 2022-02-08 | 浙江奥首材料科技有限公司 | Water-based full-suspension diamond polishing solution for sapphire, preparation method and application thereof |
CN114751438A (en) * | 2022-04-28 | 2022-07-15 | 浙江奥首材料科技有限公司 | Aluminum oxide abrasive, preparation method and application thereof, silicon wafer grinding fluid containing aluminum oxide abrasive and grinding method |
CN115039203A (en) * | 2021-01-06 | 2022-09-09 | 昭和电工材料株式会社 | Polishing liquid, polishing liquid set and polishing method |
CN115044299A (en) * | 2022-07-04 | 2022-09-13 | 浙江奥首材料科技有限公司 | Water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent, preparation method and application thereof, and grinding fluid containing water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent |
-
2023
- 2023-02-14 CN CN202310109880.5A patent/CN116042099B/en active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102311718A (en) * | 2011-04-26 | 2012-01-11 | 东莞市安美润滑科技有限公司 | Aqueous grinding fluid for ultrafine grinding of hard and brittle materials and its application method |
CN102766406A (en) * | 2012-06-25 | 2012-11-07 | 深圳市力合材料有限公司 | Polishing composition for removing surface defect of semiconductor silicon wafer and preparation method thereof |
CN103627328A (en) * | 2013-11-27 | 2014-03-12 | 常熟市劲力工具有限公司 | Oily diamond grinding fluid |
CN104592898A (en) * | 2015-01-04 | 2015-05-06 | 江苏中晶科技有限公司 | High-performance sapphire grinding fluid and preparation method thereof |
CN107208007A (en) * | 2015-01-05 | 2017-09-26 | 恩特格里斯公司 | Composite and its application method after chemically mechanical polishing |
CN105273638A (en) * | 2015-10-14 | 2016-01-27 | 盐城工学院 | Anti-cleavage suspended grinding fluid for gallium oxide wafer and preparation method thereof |
CN108699425A (en) * | 2016-01-19 | 2018-10-23 | 福吉米株式会社 | The grinding method of composition for polishing and silicon substrate |
CN110914958A (en) * | 2017-07-21 | 2020-03-24 | 福吉米株式会社 | Method for polishing substrate and polishing composition set |
CN109593472A (en) * | 2017-09-30 | 2019-04-09 | 优尔材料工业(深圳)有限公司 | diamond polishing solution and preparation method thereof |
CN109575818A (en) * | 2018-12-28 | 2019-04-05 | 天津洙诺科技有限公司 | A kind of low sodium polishing fluid and its preparation method and application |
CN111363520A (en) * | 2020-04-17 | 2020-07-03 | 深圳市朗纳研磨材料有限公司 | Grinding fluid and preparation method thereof |
CN111995983A (en) * | 2020-09-02 | 2020-11-27 | 中科孚迪科技发展有限公司 | Preparation method of grinding fluid for processing semiconductor wafer |
CN115039203A (en) * | 2021-01-06 | 2022-09-09 | 昭和电工材料株式会社 | Polishing liquid, polishing liquid set and polishing method |
CN114015360A (en) * | 2021-11-23 | 2022-02-08 | 浙江奥首材料科技有限公司 | Water-based full-suspension diamond polishing solution for sapphire, preparation method and application thereof |
CN114751438A (en) * | 2022-04-28 | 2022-07-15 | 浙江奥首材料科技有限公司 | Aluminum oxide abrasive, preparation method and application thereof, silicon wafer grinding fluid containing aluminum oxide abrasive and grinding method |
CN115044299A (en) * | 2022-07-04 | 2022-09-13 | 浙江奥首材料科技有限公司 | Water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent, preparation method and application thereof, and grinding fluid containing water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent |
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