CN117497497B - A liquid cooling and heat dissipation packaging structure for a power module - Google Patents
A liquid cooling and heat dissipation packaging structure for a power module Download PDFInfo
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- CN117497497B CN117497497B CN202311842265.1A CN202311842265A CN117497497B CN 117497497 B CN117497497 B CN 117497497B CN 202311842265 A CN202311842265 A CN 202311842265A CN 117497497 B CN117497497 B CN 117497497B
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Abstract
本发明属于半导体器件技术领域,具体涉及一种功率模块液冷散热封装结构。针对现有碳化硅功率模块散热效率较低的不足,本发明采用如下技术方案:一种功率模块液冷散热封装结构,包括DBC陶瓷基板;功率芯片;内铜层,形成流经功率芯片的内冷却通道;外铜层,形成外冷却通道;冷却液,在内冷却通道和外冷却通道流动;引线,一端连接功率芯片,另一端经内铜层、DBC陶瓷基板引出;DBC陶瓷基板、内铜层、功率芯片、外铜层沿厚度方向层叠分布并连接为一个整体。本发明的有益效果是:提高了散热效率,降低了不同面的温度差,提升功率芯片工作可靠性;相比现有的双面水冷散热结构,外铜层可以直接形成封装结构的外表面。
The present invention belongs to the technical field of semiconductor devices, and specifically relates to a power module liquid-cooled heat dissipation packaging structure. In view of the low heat dissipation efficiency of existing silicon carbide power modules, the present invention adopts the following technical solution: a power module liquid-cooled heat dissipation packaging structure, including a DBC ceramic substrate; a power chip; an inner copper layer, forming an inner cooling channel flowing through the power chip; an outer copper layer, forming an outer cooling channel; a coolant, flowing in the inner cooling channel and the outer cooling channel; a lead, one end of which is connected to the power chip, and the other end is led out through the inner copper layer and the DBC ceramic substrate; the DBC ceramic substrate, the inner copper layer, the power chip, and the outer copper layer are stacked and distributed along the thickness direction and connected as a whole. The beneficial effects of the present invention are: improving the heat dissipation efficiency, reducing the temperature difference between different surfaces, and improving the working reliability of the power chip; compared with the existing double-sided water-cooled heat dissipation structure, the outer copper layer can directly form the outer surface of the packaging structure.
Description
技术领域Technical Field
本发明属于半导体器件技术领域,具体涉及一种功率模块液冷散热封装结构。The present invention belongs to the technical field of semiconductor devices, and in particular relates to a liquid-cooled heat dissipation packaging structure for a power module.
背景技术Background technique
碳化硅功率模块以其耐高温、高温环境下稳定性高等优点而成为研究的重点。如新能源汽车车用功率模块已从硅基IGBT(缘栅双极晶体管,Insulate-Gate BipolarTransistor,IGBT)为主的时代,开始逐步进入以碳化硅MOSFET(金氧半场效晶体管,Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET)为核心的发展阶段。Silicon carbide power modules have become the focus of research due to their high temperature resistance and high stability in high temperature environments. For example, the power modules for new energy vehicles have gradually entered the development stage with silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) as the core, from the era dominated by silicon-based IGBT (Insulate-Gate Bipolar Transistor, IGBT).
随着碳化硅功率模块功耗的增加,散热成为影响碳化硅功率模块长期稳定运行的重要因素。针对高压、大电流的高压功率模块,只能采用液冷散热方式。但是当前液冷散热方式大都是在功率模块的DBC(直接覆铜,Direct Bond Copper,DBC)陶瓷基板下方焊接或贴合水冷板(界面材料),只能对芯片单面进行冷却。如CN116741724A-冷却集成的碳化硅模块及其制备方法、芯片的改造方法公开的方案中,通过设置歧管层,在芯片上设置微流道,提升了散热效率。As the power consumption of silicon carbide power modules increases, heat dissipation becomes an important factor affecting the long-term stable operation of silicon carbide power modules. For high-voltage and high-current high-voltage power modules, only liquid cooling can be used. However, the current liquid cooling methods mostly weld or bond a water cooling plate (interface material) under the DBC (Direct Bond Copper, DBC) ceramic substrate of the power module, and can only cool one side of the chip. For example, in the scheme disclosed in CN116741724A-Cooling integrated silicon carbide module and its preparation method, chip modification method, by setting a manifold layer and setting a microchannel on the chip, the heat dissipation efficiency is improved.
但是,前述专利申请仍然存在以下问题:芯片仅单面散热,芯片内部存在温度不均匀性,在与水冷板贴合处的芯片表面温度最低,远离水冷板端的芯片温度较高(该面通常采用环氧树脂密封),两表面的温度差导致了内部的温度梯度,影响芯片的使用寿命。并且,随着功率的上升,为保证功率芯片的正常运行,通常采用加大流体流量的方式,这种方式会增大芯片内部的温度差,降低芯片的可靠性。同时,前述专利申请只公开了液冷散热结构,而未公开完整封装结构,未能将封装与液冷进行结合,也未公开具体接线结构。当采用双面冷却结构后,还需要解决封装和接线问题。However, the aforementioned patent application still has the following problems: the chip only dissipates heat on one side, there is temperature non-uniformity inside the chip, the surface temperature of the chip where it is bonded to the water cooling plate is the lowest, and the temperature of the chip farthest from the water cooling plate is higher (this surface is usually sealed with epoxy resin). The temperature difference between the two surfaces leads to an internal temperature gradient, which affects the service life of the chip. In addition, as the power increases, in order to ensure the normal operation of the power chip, it is usually necessary to increase the fluid flow rate, which will increase the temperature difference inside the chip and reduce the reliability of the chip. At the same time, the aforementioned patent application only discloses the liquid cooling heat dissipation structure, but does not disclose the complete packaging structure, fails to combine the packaging with liquid cooling, and does not disclose the specific wiring structure. When a double-sided cooling structure is adopted, the packaging and wiring problems still need to be solved.
此外,虽然现有技术中也有双面散热的功率模块,但是大都并非采用液冷散热。少数的双面液冷散热结构,其冷却液与功率芯片间间隔了铝壳、铜、环氧树脂等,导致热阻较大,散热效率较低,且结构较为复杂,仍有很多提升空间。同时,现有双面液冷散热封装结构多采用环氧树脂等进行封装。In addition, although there are power modules with double-sided heat dissipation in the prior art, most of them do not use liquid cooling. In a few double-sided liquid cooling structures, the coolant and the power chip are separated by aluminum shells, copper, epoxy resin, etc., resulting in large thermal resistance, low heat dissipation efficiency, and a relatively complex structure, which still has a lot of room for improvement. At the same time, the existing double-sided liquid cooling packaging structure is mostly encapsulated with epoxy resin, etc.
发明内容Summary of the invention
本发明针对现有碳化硅功率模块散热效率较低的不足,提供一种功率模块液冷散热封装结构,对芯片进行多面的液冷散热,降低热阻,提高散热效率,减小温度差。In view of the low heat dissipation efficiency of existing silicon carbide power modules, the present invention provides a power module liquid cooling and heat dissipation packaging structure, which performs multi-faceted liquid cooling on chips, reduces thermal resistance, improves heat dissipation efficiency, and reduces temperature differences.
为实现上述目的,本发明采用如下技术方案:一种功率模块液冷散热封装结构,所述功率模块液冷散热封装结构包括:To achieve the above object, the present invention adopts the following technical solution: a power module liquid cooling and heat dissipation packaging structure, the power module liquid cooling and heat dissipation packaging structure comprising:
DBC陶瓷基板;DBC ceramic substrate;
功率芯片;Power chip;
内铜层,位于功率芯片和DBC陶瓷基板之间,形成流经功率芯片的内冷却通道;The inner copper layer is located between the power chip and the DBC ceramic substrate to form an inner cooling channel flowing through the power chip;
外铜层,形成用于对功率芯片的外侧进行冷却的外冷却通道;An outer copper layer, forming an outer cooling channel for cooling the outer side of the power chip;
冷却液,在内冷却通道和外冷却通道流动;A coolant flows in the inner cooling channel and the outer cooling channel;
引线,一端连接功率芯片,另一端经内铜层、DBC陶瓷基板引出;Lead wire, one end of which is connected to the power chip, and the other end is led out through the inner copper layer and the DBC ceramic substrate;
其中,DBC陶瓷基板、内铜层、功率芯片、外铜层沿厚度方向层叠分布并连接为一个整体。Among them, the DBC ceramic substrate, the inner copper layer, the power chip, and the outer copper layer are stacked and distributed along the thickness direction and connected as a whole.
本发明的功率模块液冷散热封装结构,设有内铜层和外铜层,内铜层位于功率芯片和DBC陶瓷基板之间并形成内冷却通道,外铜层形成外冷却通道,冷却液流经内冷却通道,内冷却通道中流动的冷却液直接流经功率芯片,对功率芯片的厚度方向的一面进行冷却,外冷却通道中流动的冷却液直接或间接流经功率芯片,功率芯片的厚度方向的另一面进行冷却,相比现有技术单面冷却结构,本发明的功率模块液冷散热封装结构对功率芯片进行更多面的散热,提高了散热效率,降低了不同面的温度差;外铜层可以直接形成封装结构的外表面,无需使用环氧树脂等密封材料作为封装结构的外表面;采用新的引线引出结构,以不妨碍实现双面液冷。The power module liquid-cooling and heat dissipation packaging structure of the present invention is provided with an inner copper layer and an outer copper layer, the inner copper layer is located between the power chip and the DBC ceramic substrate and forms an inner cooling channel, the outer copper layer forms an outer cooling channel, the coolant flows through the inner cooling channel, the coolant flowing in the inner cooling channel directly flows through the power chip to cool one side of the power chip in the thickness direction, the coolant flowing in the outer cooling channel directly or indirectly flows through the power chip to cool the other side of the power chip in the thickness direction, compared with the single-sided cooling structure of the prior art, the power module liquid-cooling and heat dissipation packaging structure of the present invention dissipates heat from more sides of the power chip, improves the heat dissipation efficiency, and reduces the temperature difference between different sides; the outer copper layer can directly form the outer surface of the packaging structure, without using sealing materials such as epoxy resin as the outer surface of the packaging structure; a new lead lead-out structure is adopted so as not to hinder the realization of double-sided liquid cooling.
作为外铜层改进的一个方向,外冷却通道与功率芯片相隔离,从而避免外冷却通道中的冷却液对功率芯片可能造成的腐蚀带来的绝缘问题,并且降低功率芯片的绝缘要求。外冷却通道与功率芯片的隔离通过铜层之间的密封实现,相比采用环氧树脂等方式的密封更加可靠。As one direction of improving the outer copper layer, the outer cooling channel is isolated from the power chip, thereby avoiding the insulation problem caused by the corrosion of the power chip caused by the coolant in the outer cooling channel, and reducing the insulation requirements of the power chip. The isolation of the outer cooling channel and the power chip is achieved by sealing between the copper layers, which is more reliable than sealing using epoxy resin and other methods.
作为外铜层改进的另一个方向,功率芯片与引线连接后绝缘处理,冷却液为绝缘的冷却液,外铜层包括基部,基部上形成入水槽、散热槽和出水槽,入水槽、散热槽和出水槽形成外冷却通道,功率芯片位于散热槽中。外冷却通道中的冷却液流经功率芯片厚度方向一侧表面,提升散热效果,但同时也对功率芯片的绝缘提出较高要求。As another direction of improvement of the outer copper layer, the power chip is insulated after being connected to the lead wire, and the coolant is an insulating coolant. The outer copper layer includes a base, and a water inlet, a heat dissipation groove and a water outlet groove are formed on the base. The water inlet, the heat dissipation groove and the water outlet groove form an external cooling channel, and the power chip is located in the heat dissipation groove. The coolant in the external cooling channel flows through the surface of one side of the power chip in the thickness direction, which improves the heat dissipation effect, but also puts forward higher requirements on the insulation of the power chip.
作为内铜层的改进方向,内铜层包括歧管分流板和内导流板,歧管分流板位于DBC陶瓷基板和内导流板之间,歧管分流板具有歧管入水孔、分流歧管和歧管出水孔,内导流板具有厚度方向贯通的贯通导流槽;功率芯片包括衬底层、材料层和漏极,衬底层具有微流道,贯通导流槽连通微流道和分流歧管。As an improvement direction for the inner copper layer, the inner copper layer includes a manifold diverter plate and an inner guide plate. The manifold diverter plate is located between the DBC ceramic substrate and the inner guide plate. The manifold diverter plate has a manifold water inlet hole, a diversion manifold and a manifold water outlet hole. The inner guide plate has a through guide groove that penetrates in the thickness direction. The power chip includes a substrate layer, a material layer and a drain. The substrate layer has a microchannel, and the through guide groove connects the microchannel and the diversion manifold.
作为功率芯片分布的改进的方向,内铜层分为第一内铜层和第二内铜层,外铜层分为第一外铜层和第二外铜层,第一内铜层和第一外铜层间设有两个功率芯片,第二内铜层和第二外铜层间设有一个功率芯片,内铜层中的功率芯片和外铜层中的功率芯片在水平面(长宽面)上的投影错开,第一外铜层和第二外铜层形成封装结构的厚度方向的外表面。As an improved direction for the distribution of power chips, the inner copper layer is divided into a first inner copper layer and a second inner copper layer, the outer copper layer is divided into a first outer copper layer and a second outer copper layer, two power chips are arranged between the first inner copper layer and the first outer copper layer, and one power chip is arranged between the second inner copper layer and the second outer copper layer, the projections of the power chips in the inner copper layer and the power chips in the outer copper layer on the horizontal plane (length and width plane) are staggered, and the first outer copper layer and the second outer copper layer form the outer surface in the thickness direction of the packaging structure.
本发明的功率模块液冷散热封装结构的有益效果是:设有内铜层和外铜层,内铜层位于功率芯片和DBC陶瓷基板之间并形成内冷却通道,外铜层相比芯片更远离DBC陶瓷基板并形成外冷却通道,冷却液流经内冷却通道,内冷却通道中流动的冷却液直接流经功率芯片,对功率芯片的厚度方向的一面进行冷却,外冷却通道中流动的冷却液直接或间接流经功率芯片,功率芯片的厚度方向的另一面进行冷却,相比现有技术单面冷却结构,本发明的功率模块液冷散热封装结构对功率芯片进行更多面的散热,提高了散热效率,降低了不同面的温度差,提升功率芯片工作可靠性;相比现有的双面水冷散热结构,外铜层可以直接形成封装结构的外表面,无需使用环氧树脂等密封材料作为封装结构的外表面;采用新的引线引出结构,以不妨碍实现双面液冷。The beneficial effects of the power module liquid-cooling and heat dissipation packaging structure of the present invention are: an inner copper layer and an outer copper layer are provided, the inner copper layer is located between the power chip and the DBC ceramic substrate and forms an inner cooling channel, the outer copper layer is farther away from the DBC ceramic substrate than the chip and forms an outer cooling channel, the coolant flows through the inner cooling channel, the coolant flowing in the inner cooling channel directly flows through the power chip to cool one side of the power chip in the thickness direction, the coolant flowing in the outer cooling channel directly or indirectly flows through the power chip to cool the other side of the power chip in the thickness direction, compared with the single-sided cooling structure of the prior art, the power module liquid-cooling and heat dissipation packaging structure of the present invention dissipates heat from more sides of the power chip, improves the heat dissipation efficiency, reduces the temperature difference between different sides, and improves the working reliability of the power chip; compared with the existing double-sided water-cooling and heat dissipation structure, the outer copper layer can directly form the outer surface of the packaging structure, and there is no need to use sealing materials such as epoxy resin as the outer surface of the packaging structure; a new lead lead-out structure is adopted so as not to hinder the realization of double-sided liquid cooling.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是本发明实施例一的功率模块液冷散热封装结构的结构示意图。FIG1 is a schematic structural diagram of a liquid-cooled heat dissipation packaging structure for a power module according to a first embodiment of the present invention.
图2是本发明实施例一的功率模块液冷散热封装结构的剖视图(虚线箭头为冷却液流动方向)。FIG2 is a cross-sectional view of a liquid-cooled heat dissipation packaging structure for a power module according to a first embodiment of the present invention (the dotted arrow indicates the flow direction of the coolant).
图3是本发明实施例一的功率模块液冷散热封装结构的结构分解图。FIG. 3 is a structural exploded view of the liquid-cooling and heat dissipation packaging structure of the power module according to the first embodiment of the present invention.
图4是本发明实施例一的功率模块液冷散热封装结构的DBC陶瓷基板的结构示意图。FIG. 4 is a schematic structural diagram of a DBC ceramic substrate of a power module liquid cooling and heat dissipation packaging structure according to the first embodiment of the present invention.
图5是本发明实施例一的功率模块液冷散热封装结构的第一歧管分流板的结构示意图。FIG. 5 is a schematic structural diagram of a first manifold shunt plate of a power module liquid cooling and heat dissipation packaging structure according to the first embodiment of the present invention.
图6是本发明实施例一的功率模块液冷散热封装结构的第一内导流板的结构示意图。FIG. 6 is a schematic structural diagram of a first inner guide plate of a power module liquid-cooling and heat dissipation packaging structure according to the first embodiment of the present invention.
图7是本发明实施例一的功率模块液冷散热封装结构的功率芯片的结构示意图。FIG. 7 is a schematic diagram of the structure of a power chip of a power module liquid cooling and heat dissipation packaging structure according to the first embodiment of the present invention.
图8是是本发明实施例一的功率模块液冷散热封装结构的第一外导流板的结构示意图。FIG8 is a schematic structural diagram of a first outer guide plate of a power module liquid cooling and heat dissipation packaging structure according to the first embodiment of the present invention.
图9是是本发明实施例一的功率模块液冷散热封装结构的第一封盖板的结构示意图。FIG. 9 is a schematic structural diagram of a first cover plate of a power module liquid cooling and heat dissipation packaging structure according to the first embodiment of the present invention.
图10是本发明实施例一的功率模块液冷散热封装结构的另一角度的立体断面示意图。FIG. 10 is a schematic three-dimensional cross-sectional view from another angle of the liquid-cooling and heat dissipation packaging structure of the power module according to the first embodiment of the present invention.
图中,1、DBC陶瓷基板;11、基板厚度接线孔;12、基板水平接线孔;In the figure, 1, DBC ceramic substrate; 11, substrate thickness wiring hole; 12, substrate horizontal wiring hole;
2、功率芯片;21、环形密封部;22、凹槽;2. power chip; 21. annular sealing portion; 22. groove;
3、第一歧管分流板;31、歧管入水孔;32、分流歧管;33、歧管出水孔;34、铜层厚度接线孔;3. First manifold splitter plate; 31. Manifold water inlet hole; 32. Splitting manifold; 33. Manifold water outlet hole; 34. Copper layer thickness wiring hole;
4、第一内导流板;41、贯通导流槽;4. a first inner guide plate; 41. a through guide groove;
5、第一外导流板;51、入水槽;52、导外槽;53、导内槽;54、出水槽;55、中间槽;56、容纳槽;5. First outer guide plate; 51. Water inlet trough; 52. Outer guide trough; 53. Inner guide trough; 54. Water outlet trough; 55. Middle trough; 56. Accommodating trough;
6、第一封盖板;61、散热槽;62、散热翅片;6. first cover plate; 61. heat sink; 62. heat sink fin;
7、第二歧管分流板;7. Second manifold splitter plate;
8、第二内导流板;8. Second inner guide plate;
9、第二外导流板;9. Second outer guide plate;
10、第二封盖板;10. Second covering plate;
D、分液器;D. Dispenser;
L、引线。L. Lead.
具体实施方式Detailed ways
下面对本发明创造实施例的技术方案进行解释和说明,但下述实施例仅为本发明创造的优选实施例,并非全部。基于实施方式中的实施例,本领域技术人员在没有做出创造性劳动的前提下所获得的其他实施例,都属于本发明创造的保护范围。The technical solutions of the embodiments of the present invention are explained and described below, but the following embodiments are only preferred embodiments of the present invention, not all. Based on the embodiments in the implementation mode, other embodiments obtained by those skilled in the art without creative work are all within the protection scope of the present invention.
参见图1至图10,本发明实施例一的一种功率模块液冷散热封装结构,所述功率模块液冷散热封装结构包括:1 to 10 , a power module liquid cooling and heat dissipation packaging structure according to a first embodiment of the present invention includes:
DBC陶瓷基板1;DBC ceramic substrate 1;
功率芯片2;Power chip 2;
内铜层,位于功率芯片2和DBC陶瓷基板1之间,形成流经功率芯片2的内冷却通道;The inner copper layer is located between the power chip 2 and the DBC ceramic substrate 1 to form an inner cooling channel flowing through the power chip 2;
外铜层,形成用于对功率芯片2的外侧进行冷却的外冷却通道;An outer copper layer, forming an outer cooling channel for cooling the outer side of the power chip 2;
冷却液,在内冷却通道和外冷却通道流动;A coolant flows in the inner cooling channel and the outer cooling channel;
引线L,一端连接功率芯片2,另一端经内铜层、DBC陶瓷基板1引出;Lead L, one end of which is connected to the power chip 2, and the other end is led out through the inner copper layer and the DBC ceramic substrate 1;
其中,DBC陶瓷基板1、内铜层、功率芯片2、外铜层沿厚度方向层叠分布并连接为一个整体。The DBC ceramic substrate 1, the inner copper layer, the power chip 2, and the outer copper layer are stacked and distributed along the thickness direction and connected as a whole.
参见图1至图3,本实施例中,功率模块液冷散热封装结构包括一DBC陶瓷基板1、三个功率芯片2、两内铜层(分别包括一歧管分流板和一内导流板)、两外铜层(分别包括一外导流板和一封盖板)。功率模块液冷散热封装结构还包括位于两端的分液器D,分液器D与内冷却通道、外冷却通道相连通。分液器D仅做简单示意,分液器D的具体结构如其中的通道等均未示出。冷却液图中未示出。从DBC陶瓷基板1出发,厚度方向向上依次分布第一歧管分流板3、第一内导流板4、两功率芯片2、第一外导流板5和第一封盖板6,厚度方向向下依次分布第二歧管分流板7、第二内导流板8、两功率芯片2、第二外导流板9和第二封盖板10。功率模块液冷散热封装结构(除分液器D外)整体呈长方体状,同层的两功率芯片2沿长度方向分布。Referring to Figures 1 to 3, in this embodiment, the power module liquid cooling and heat dissipation packaging structure includes a DBC ceramic substrate 1, three power chips 2, two inner copper layers (including a manifold diverter plate and an inner guide plate respectively), and two outer copper layers (including an outer guide plate and a cover plate respectively). The power module liquid cooling and heat dissipation packaging structure also includes a liquid distributor D located at both ends, and the liquid distributor D is connected to the inner cooling channel and the outer cooling channel. The liquid distributor D is only briefly illustrated, and the specific structure of the liquid distributor D, such as the channels therein, is not shown. The coolant is not shown in the figure. Starting from the DBC ceramic substrate 1, the first manifold diverter plate 3, the first inner guide plate 4, the two power chips 2, the first outer guide plate 5 and the first cover plate 6 are distributed in sequence in the thickness direction upward, and the second manifold diverter plate 7, the second inner guide plate 8, the two power chips 2, the second outer guide plate 9 and the second cover plate 10 are distributed in sequence in the thickness direction downward. The power module liquid cooling and heat dissipation packaging structure (except the liquid distributor D) is a rectangular parallelepiped as a whole, and the two power chips 2 on the same layer are distributed along the length direction.
内铜层分为第一内铜层和第二内铜层,外铜层分为第一外铜层和第二外铜层,第一内铜层和第一外铜层间设有两个功率芯片2,第二内铜层和第二外铜层间设有一个功率芯片2,在上的两个功率芯片2和在下的一个功率芯片2沿厚度方向的投影错开,第一外铜层和第二外铜层形成封装结构的厚度方向的外表面,即第一封盖板6的上表面和第二封盖板10的下表面形成封装结构的上下表面。The inner copper layer is divided into a first inner copper layer and a second inner copper layer, and the outer copper layer is divided into a first outer copper layer and a second outer copper layer. Two power chips 2 are arranged between the first inner copper layer and the first outer copper layer, and one power chip 2 is arranged between the second inner copper layer and the second outer copper layer. The projections of the two upper power chips 2 and the lower power chip 2 along the thickness direction are staggered. The first outer copper layer and the second outer copper layer form the outer surface of the packaging structure in the thickness direction, that is, the upper surface of the first cover plate 6 and the lower surface of the second cover plate 10 form the upper and lower surfaces of the packaging structure.
DBC陶瓷基板1上方设有两个功率芯片2,下方设有一个功率芯片2。功率模块液冷散热封装结构形成流经在上的两个功率芯片2的第一内冷却通道,形成流经在上的两个功率芯片2上方的容纳槽56外壁的第一外冷却通道。功率模块液冷散热封装结构形成流经在下的一个功率芯片2的第二内冷却通道,形成流经在下的一个功率芯片2下方的容纳槽56外壁的第二外冷却通道。Two power chips 2 are arranged above the DBC ceramic substrate 1, and one power chip 2 is arranged below. The power module liquid cooling and heat dissipation packaging structure forms a first inner cooling channel flowing through the two power chips 2 above, and forms a first outer cooling channel flowing through the outer wall of the receiving groove 56 above the two power chips 2 above. The power module liquid cooling and heat dissipation packaging structure forms a second inner cooling channel flowing through a power chip 2 below, and forms a second outer cooling channel flowing through the outer wall of the receiving groove 56 below the power chip 2 below.
参见图4至图6,本实施例中,DBC陶瓷基板1上开设厚度方向的基板厚度接线孔11和基板水平接线孔12,内铜层的歧管分流板和内导流板开设厚度方向贯通的铜层厚度接线孔34,基板水平接线孔12、基板厚度接线孔11和铜层厚度接线孔34相连通。基板厚度接线孔11有三组共六个,基板水平接线孔12有三个,三个基板水平接线孔12有六个出口,分别对应三个功率芯片2,用于六根引线L引出。铜层厚度接线孔34和基板厚度接线孔11同轴设置。引线L经由基板水平接线孔12、基板厚度接线孔11和铜层厚度接线孔34与功率芯片2的漏极相连。为避免引线L被压,在第一内导流板4和/或第一外导流板5间设置与铜层厚度接线孔34相连通的引线槽。Referring to FIG. 4 to FIG. 6 , in this embodiment, a substrate thickness wiring hole 11 and a substrate horizontal wiring hole 12 are provided on the DBC ceramic substrate 1 in the thickness direction, and a copper layer thickness wiring hole 34 is provided on the manifold shunt plate and the inner guide plate of the inner copper layer in the thickness direction, and the substrate horizontal wiring hole 12, the substrate thickness wiring hole 11 and the copper layer thickness wiring hole 34 are connected. There are three groups of six substrate thickness wiring holes 11, three substrate horizontal wiring holes 12, and three substrate horizontal wiring holes 12 have six outlets, which correspond to three power chips 2 respectively, and are used for leading out six leads L. The copper layer thickness wiring hole 34 and the substrate thickness wiring hole 11 are coaxially arranged. The lead L is connected to the drain of the power chip 2 via the substrate horizontal wiring hole 12, the substrate thickness wiring hole 11 and the copper layer thickness wiring hole 34. In order to prevent the lead L from being pressed, a lead groove connected to the copper layer thickness wiring hole 34 is provided between the first inner guide plate 4 and/or the first outer guide plate 5.
参见图5,第一歧管分流板3具有歧管入水孔31、分流歧管32和歧管出水孔33,分流歧管32有两个。第一歧管分流板3开设厚度方向贯通的两组共四个铜层厚度接线孔34。歧管入水孔31和歧管出水孔33同轴设置,第一歧管分流板3上还开设与歧管入水孔31同轴的中间槽55。Referring to FIG5 , the first manifold diverter plate 3 has a manifold water inlet 31, a diverter manifold 32 and a manifold water outlet 33, and there are two diverter manifolds 32. The first manifold diverter plate 3 is provided with two groups of four copper layer thickness wiring holes 34 that penetrate in the thickness direction. The manifold water inlet 31 and the manifold water outlet 33 are coaxially arranged, and the first manifold diverter plate 3 is also provided with an intermediate groove 55 coaxial with the manifold water inlet 31.
参见图6,第一内导流板4具有厚度方向贯通的多条贯通导流槽41。第一内导流板4开设厚度方向贯通的两组共四个铜层厚度接线孔34。6 , the first inner guide plate 4 has a plurality of through guide grooves 41 penetrating in the thickness direction. The first inner guide plate 4 is provided with two groups of four copper layer thickness wiring holes 34 penetrating in the thickness direction.
参见图7,本实施例中,功率芯片2包括衬底层、材料层和漏极,衬底层绝缘,衬底层具有凸部,凸部间形成凹槽22,凸部的底面与内铜层密封相接,凹槽22中形成微流道。衬底层将材料层和漏极与内铜层、外铜层间绝缘,漏极连接导线。衬底层具有微流道(图中未示出),第一内导流板4的贯通导流槽41连通功率芯片2的微流道和第一歧管分流板3的分流歧管32。歧管入水孔31、分流歧管32、贯通导流槽41和歧管出水孔33形成内冷却通道。Referring to FIG. 7 , in this embodiment, the power chip 2 includes a substrate layer, a material layer and a drain electrode. The substrate layer is insulated, and the substrate layer has convex portions, and grooves 22 are formed between the convex portions. The bottom surface of the convex portion is sealed and connected to the inner copper layer, and a microchannel is formed in the groove 22. The substrate layer insulates the material layer and the drain electrode from the inner copper layer and the outer copper layer, and the drain electrode is connected to the wire. The substrate layer has a microchannel (not shown in the figure), and the through flow guide groove 41 of the first inner flow guide plate 4 connects the microchannel of the power chip 2 and the diversion manifold 32 of the first manifold diversion plate 3. The manifold water inlet 31, the diversion manifold 32, the through flow guide groove 41 and the manifold water outlet 33 form an inner cooling channel.
参见图8,第一外导流板5具有入水槽51和出水槽54,第一外导流板5具有厚度方向的导外槽52和导内槽53。第一外导流板5朝向功率芯片2的一面形成具有顶壁和环形侧壁的容纳槽56,容纳槽56与外冷却通道相隔离,功率芯片2位于容纳槽56中。第一外导流板5上形成两个沿第一水平方向分布的容纳槽56,功率芯片2有两个,导外槽52和导内槽53均有两个,中间的导内槽53和导外槽52之间形成中间槽55。Referring to FIG8 , the first outer guide plate 5 has a water inlet groove 51 and a water outlet groove 54, and the first outer guide plate 5 has an outer guide groove 52 and an inner guide groove 53 in the thickness direction. A receiving groove 56 having a top wall and an annular side wall is formed on the side of the first outer guide plate 5 facing the power chip 2. The receiving groove 56 is isolated from the external cooling channel, and the power chip 2 is located in the receiving groove 56. Two receiving grooves 56 distributed along the first horizontal direction are formed on the first outer guide plate 5, the power chip 2 has two, the outer guide groove 52 and the inner guide groove 53 each have two, and an intermediate groove 55 is formed between the inner guide groove 53 and the outer guide groove 52.
本实施例中,将第一外冷却通道与功率芯片2通过第一外导流板5隔离开,从而保证冷却液不会破坏功率芯片2的绝缘处理。冷却液采用导电的冷却液如水。In this embodiment, the first outer cooling channel is isolated from the power chip 2 by the first outer guide plate 5, so as to ensure that the coolant does not damage the insulation of the power chip 2. The coolant is a conductive coolant such as water.
参见图9,第一封盖板6朝向功率芯片2一面形成两个散热槽61,两个散热槽61中均形成散热翅片62。入水槽51、导外槽52、散热槽61、导内槽53和出水槽54形成外冷却通道。9 , two heat dissipation grooves 61 are formed on the first cover plate 6 facing the power chip 2, and heat dissipation fins 62 are formed in the two heat dissipation grooves 61. The water inlet groove 51, the outer guide groove 52, the heat dissipation groove 61, the inner guide groove 53 and the water outlet groove 54 form an external cooling channel.
参见图10,功率芯片2为大功率功率芯片2,功率芯片2与引线L通过铜连接板连接,第一外导流板5的容纳槽56向宽度方向延伸并容纳铜连接板和引线L。功率芯片2的衬底层通过环形密封部21与第一内导流板密封,内冷却通道中的冷却液与将功率芯片2的导电部位、铜连接板、引线相隔离。引线L与铜连接板连接后经过功率芯片2的容纳槽56、第一内导流板4的铜层厚度接线孔34、第一歧管分流板3的铜层厚度接线孔34、DBC陶瓷基板1的基板厚度接线孔11和基板水平接线孔12引出。Referring to FIG. 10 , the power chip 2 is a high-power power chip 2. The power chip 2 is connected to the lead L through a copper connecting plate. The receiving groove 56 of the first outer guide plate 5 extends in the width direction and receives the copper connecting plate and the lead L. The substrate layer of the power chip 2 is sealed with the first inner guide plate through an annular sealing portion 21. The coolant in the inner cooling channel is isolated from the conductive part, the copper connecting plate, and the lead of the power chip 2. After the lead L is connected to the copper connecting plate, it is led out through the receiving groove 56 of the power chip 2, the copper layer thickness wiring hole 34 of the first inner guide plate 4, the copper layer thickness wiring hole 34 of the first manifold diverter plate 3, the substrate thickness wiring hole 11 of the DBC ceramic substrate 1, and the substrate horizontal wiring hole 12.
参见图2,第二歧管分流板7与第一歧管分流板3为适应不同数量的功率芯片2,第二歧管分流板7的分流歧管32和铜层厚度接线孔34的数量和位置与第一歧管分流板3的不同。2 , the second manifold shunt plate 7 and the first manifold shunt plate 3 are adapted to different numbers of power chips 2 , and the number and positions of the shunt manifolds 32 and the copper layer thickness wiring holes 34 of the second manifold shunt plate 7 are different from those of the first manifold shunt plate 3 .
第二内导流板8与第一内导流板4为适应不同数量的功率芯片2,第二内导流板8的贯通导流槽41和铜层厚度接线孔34的数量和位置与第一内导流板4的不同。In order to adapt to different numbers of power chips 2 , the second inner guide plate 8 and the first inner guide plate 4 have different numbers and positions of through guide grooves 41 and copper layer thickness wiring holes 34 from those of the first inner guide plate 4 .
第二外导流板9和第一外导流板5为适应不同数量的功率芯片2,第二外导流板9的导外槽52、导内槽53、容纳槽56的数量和位置与第一外导流板5的不同,也没有中间槽55。In order to adapt to different numbers of power chips 2 , the second outer guide plate 9 and the first outer guide plate 5 have different numbers and positions of outer guide grooves 52 , inner guide grooves 53 , and accommodating grooves 56 from those of the first outer guide plate 5 , and there is no middle groove 55 .
第二封盖板10和第一封盖板6为适应不同数量的功率芯片2,第二封盖板10的散热槽61的数量和位置与第一封盖板6的不同。In order to adapt to different numbers of power chips 2 , the second cover plate 10 and the first cover plate 6 have different numbers and positions of the heat dissipation slots 61 from those of the first cover plate 6 .
本实施例中,DBC陶瓷基板1、功率芯片2、第一歧管分流板3、第一内导流板4、第一外导流板5和第一封盖板6可以通过扩散焊、锡焊、银烧结、铜烧结、涂导热材料等方式连接。In this embodiment, the DBC ceramic substrate 1, the power chip 2, the first manifold diverter plate 3, the first inner guide plate 4, the first outer guide plate 5 and the first cover plate 6 can be connected by diffusion welding, tin soldering, silver sintering, copper sintering, coating with thermal conductive materials, etc.
为验证本发明方案的效果,将常见的基板单面冷却、双面冷却方案与本发明方案进行对比。实验对象为一块40 mm×40 mm×2 mm(长×宽×高)的DBC基板(中间陶瓷层1mm,上下覆铜0.5 mm),在基板上下表面各烧结1个10 mm×10 mm×0.5 mm(长×宽×高)的功率芯片。To verify the effect of the scheme of the present invention, the common single-side cooling and double-side cooling schemes of the substrate are compared with the scheme of the present invention. The experimental object is a 40 mm×40 mm×2 mm (length×width×height) DBC substrate (1 mm middle ceramic layer, 0.5 mm upper and lower copper), and a 10 mm×10 mm×0.5 mm (length×width×height) power chip is sintered on the upper and lower surfaces of the substrate.
现有基板单面冷却方案采用基板陶瓷层微通道方案:在DBC基板陶瓷层等间距构造 40mm×1mm×1mm(长×宽×高)的19条微通道。The existing single-sided cooling solution of the substrate adopts a microchannel solution of the substrate ceramic layer: 19 microchannels of 40mm×1mm×1mm (length×width×height) are constructed at equal intervals on the ceramic layer of the DBC substrate.
现有双面冷却方案采用双面贴合微通道水冷板方案:在基板单面冷却方案基础上,还在上下芯片表面均贴合40mm×40mm×2mm 的水冷板,其中水冷板内部均匀布置40mm×1mm×1mm(长×宽×高)的19条微通道,总计38条微通道。The existing double-sided cooling solution adopts a double-sided microchannel water-cooling plate solution: based on the single-sided cooling solution of the substrate, a 40mm×40mm×2mm water-cooling plate is bonded to the upper and lower chip surfaces, and 19 microchannels of 40mm×1mm×1mm (length×width×height) are evenly arranged inside the water-cooling plate, for a total of 38 microchannels.
本发明对比方案在芯片衬底内构造99条10mm×0.1mm×0.2mm的微通道,两个芯片均需构造,总计198条微通道;在芯片上方盖板区域,在芯片上方对应的盖板区域内布置均匀布置256个直径为0.3mm的圆柱状翅片,上下盖板均需布置构造,总计512个翅片。本发明对比方案不同于图1至图10所示的实施例一方案,本发明对比方案中,基板上下方均只设置一块芯片。The comparative scheme of the present invention constructs 99 10mm×0.1mm×0.2mm microchannels in the chip substrate, and both chips need to be constructed, with a total of 198 microchannels; in the cover plate area above the chip, 256 cylindrical fins with a diameter of 0.3mm are evenly arranged in the corresponding cover plate area above the chip, and both the upper and lower cover plates need to be arranged and constructed, with a total of 512 fins. The comparative scheme of the present invention is different from the embodiment 1 scheme shown in Figures 1 to 10. In the comparative scheme of the present invention, only one chip is set on the upper and lower sides of the substrate.
为控制变量,在总流量均为10g/s的情况下,对比不同方案对相同发热量芯片的冷却效果,同时调整芯片的发热量,芯片的热流的发热量变化范围为50W、100W、150W、200W、300W、400W、600W、800W和1000W。In order to control the variables, when the total flow rate is 10g/s, the cooling effects of different schemes on chips with the same calorific value are compared, and the calorific value of the chip is adjusted at the same time. The calorific value of the chip's heat flow varies in the range of 50W, 100W, 150W, 200W, 300W, 400W, 600W, 800W and 1000W.
以芯片表面最高温度作为结温和对比指标,不同方案下,芯片结温测试结果如下:Taking the highest temperature on the chip surface as the junction temperature and comparison index, the chip junction temperature test results under different schemes are as follows:
功率器件芯片的结温应保持在150℃以下,以保证工作的可靠性。从上表可以看出,本发明对比方案的散热效果随着热流密度的升高,散热效果也逐渐提升,在1000W/cm2时也能保证结温不超过120℃,有效改善散热效果。The junction temperature of the power device chip should be kept below 150°C to ensure the reliability of the work. As can be seen from the above table, the heat dissipation effect of the comparative solution of the present invention gradually improves with the increase of heat flux density, and the junction temperature can be guaranteed not to exceed 120°C at 1000W/ cm2 , effectively improving the heat dissipation effect.
同时,由于本实施例一的方案中,基板上方的两块芯片和下方的一块芯片错开,有理由相信,在对等条件下,相比对比方案基板上下方两块芯片未错开的情况,本实施例一的方案能够获得更低的芯片结温。At the same time, since in the solution of the first embodiment, the two chips above the substrate and the one chip below are staggered, there is reason to believe that under equal conditions, the solution of the first embodiment can obtain a lower chip junction temperature than the comparative solution in which the two chips above and below the substrate are not staggered.
本发明实施例一的功率模块液冷散热封装结构的有益效果是:设有内铜层和外铜层,内铜层位于功率芯片2和DBC陶瓷基板1之间并形成内冷却通道,外铜层相比芯片更远离DBC陶瓷基板1并形成外冷却通道,冷却液流经内冷却通道,内冷却通道中流动的冷却液直接流经功率芯片2,对功率芯片2的厚度方向的一面进行冷却,外冷却通道中流动的冷却液直接或间接流经功率芯片2,功率芯片2的厚度方向的另一面进行冷却,相比现有技术单面冷却结构,本发明的功率模块液冷散热封装结构对功率芯片2进行更多面的散热,提高了散热效率,降低了不同面的温度差,提升功率芯片2工作可靠性;外冷却通道与功率芯片2通过铜层间密封实现隔离,内冷却通道通过功率芯片2的衬底层和第一内导流板4的密封实现隔离,保证冷却液不会接触功率芯片2的导电部位、铜连接板、引线L,保证绝缘性能;功率芯片2、铜连接板、引线L通过绝缘处理与内导流层和外导流层间绝缘(可以通过设置绝缘层、留出绝缘空隙等方式实现),保证功率芯片2正常工作;独特的引线L引出结构;相比现有封装结构,外铜层直接形成封装结构的外表面,无需使用环氧树脂等密封材料作为封装结构的外表面;功率芯片2的漏极和材料层与各铜层间绝缘;能够实现三个(或者更多)功率芯片2封装在一起即三合一封装。The beneficial effects of the power module liquid-cooled heat dissipation packaging structure of the first embodiment of the present invention are as follows: an inner copper layer and an outer copper layer are provided, the inner copper layer is located between the power chip 2 and the DBC ceramic substrate 1 and forms an inner cooling channel, the outer copper layer is farther away from the DBC ceramic substrate 1 than the chip and forms an outer cooling channel, the coolant flows through the inner cooling channel, the coolant flowing in the inner cooling channel directly flows through the power chip 2 to cool one side of the power chip 2 in the thickness direction, the coolant flowing in the outer cooling channel directly or indirectly flows through the power chip 2 to cool the other side of the power chip 2 in the thickness direction, compared with the single-sided cooling structure of the prior art, the power module liquid-cooled heat dissipation packaging structure of the present invention performs heat dissipation on more sides of the power chip 2, improves the heat dissipation efficiency, reduces the temperature difference between different sides, and improves the working reliability of the power chip 2; the outer The cooling channel is isolated from the power chip 2 by sealing between the copper layers, and the inner cooling channel is isolated by sealing the substrate layer of the power chip 2 and the first inner guide plate 4, so as to ensure that the coolant does not contact the conductive parts of the power chip 2, the copper connecting plate, and the lead L, thereby ensuring the insulation performance; the power chip 2, the copper connecting plate, and the lead L are insulated from the inner guide layer and the outer guide layer by insulation treatment (which can be achieved by setting an insulating layer, leaving insulating gaps, etc.), so as to ensure the normal operation of the power chip 2; a unique lead L lead-out structure; compared with the existing packaging structure, the outer copper layer directly forms the outer surface of the packaging structure, and there is no need to use sealing materials such as epoxy resin as the outer surface of the packaging structure; the drain and material layer of the power chip 2 are insulated from the copper layers; and three (or more) power chips 2 can be packaged together, i.e., three-in-one packaging.
在其它实施例中,也可以仅在DBC陶瓷基板一侧设置功率芯片,DBC陶瓷基板形成封装结构的外表面。In other embodiments, the power chip may be disposed only on one side of the DBC ceramic substrate, and the DBC ceramic substrate forms the outer surface of the packaging structure.
在其它实施例中,功率芯片连接铜连接板和引线后绝缘处理,冷却液为绝缘的冷却液,外铜层包括基部,基部上形成入水槽、散热槽和出水槽,入水槽、散热槽和出水槽形成外冷却通道,功率芯片位于散热槽中,外冷却通道中的冷却液直接接触功率芯片(不间隔铜层)。通过冷却液(功率芯片的导电部位、铜连接板、引线L与铜层间具有容纳冷却液的空隙)或者设置绝缘层或者填充环氧树脂等方式,实现功率芯片、铜连接板、引线L与铜层间的绝缘。外铜层可以为一块铜板,而非像实施例一中那样由外导流板和封盖板装配而成。In other embodiments, the power chip is connected to the copper connecting plate and the lead and then insulated, the coolant is an insulating coolant, the outer copper layer includes a base, a water inlet, a heat dissipation groove and a water outlet are formed on the base, the water inlet, the heat dissipation groove and the water outlet form an external cooling channel, the power chip is located in the heat dissipation groove, and the coolant in the external cooling channel directly contacts the power chip (without a copper layer in between). The insulation between the power chip, the copper connecting plate, the lead L and the copper layer is achieved by means of coolant (there is a gap between the conductive part of the power chip, the copper connecting plate, the lead L and the copper layer to accommodate the coolant) or by setting an insulating layer or filling epoxy resin. The outer copper layer can be a copper plate, rather than being assembled by an outer guide plate and a cover plate as in Example 1.
以上所述,仅为本发明创造的具体实施方式,但本发明创造的保护范围并不局限于此,熟悉该本领域的技术人员应该明白本发明创造包括但不限于上面具体实施方式中描述的内容。任何不偏离本发明创造的功能和结构原理的修改都将包括在权利要求书的范围中。The above is only a specific implementation of the invention, but the protection scope of the invention is not limited thereto. Those skilled in the art should understand that the invention includes but is not limited to the contents described in the above specific implementation. Any modification that does not deviate from the functional and structural principles of the invention will be included in the scope of the claims.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009177038A (en) * | 2008-01-28 | 2009-08-06 | Hitachi Ltd | Power semiconductor module |
CN201927886U (en) * | 2010-06-11 | 2011-08-10 | 西安炬光科技有限公司 | Horizontal array large-power semiconductor laser with substitutable chip |
CN114284224A (en) * | 2021-11-03 | 2022-04-05 | 浙江大学杭州国际科创中心 | Embedded power chip micro-channel heat sink with fins |
CN116053226A (en) * | 2023-01-31 | 2023-05-02 | 浙江大学杭州国际科创中心 | Power device heat radiation structure based on two-sided dysmorphism samming board of 3D |
CN116741724A (en) * | 2023-04-28 | 2023-09-12 | 浙江大学杭州国际科创中心 | Cooling integrated silicon carbide module, preparation method thereof and chip transformation method |
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US8232637B2 (en) * | 2009-04-30 | 2012-07-31 | General Electric Company | Insulated metal substrates incorporating advanced cooling |
US8305755B2 (en) * | 2010-03-04 | 2012-11-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power modules, cooling devices and methods thereof |
US20150034280A1 (en) * | 2013-08-01 | 2015-02-05 | Hamilton Sundstrand Corporation | Header for electronic cooler |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2009177038A (en) * | 2008-01-28 | 2009-08-06 | Hitachi Ltd | Power semiconductor module |
CN201927886U (en) * | 2010-06-11 | 2011-08-10 | 西安炬光科技有限公司 | Horizontal array large-power semiconductor laser with substitutable chip |
CN114284224A (en) * | 2021-11-03 | 2022-04-05 | 浙江大学杭州国际科创中心 | Embedded power chip micro-channel heat sink with fins |
CN116053226A (en) * | 2023-01-31 | 2023-05-02 | 浙江大学杭州国际科创中心 | Power device heat radiation structure based on two-sided dysmorphism samming board of 3D |
CN116741724A (en) * | 2023-04-28 | 2023-09-12 | 浙江大学杭州国际科创中心 | Cooling integrated silicon carbide module, preparation method thereof and chip transformation method |
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