CN117440601B - Power module - Google Patents
Power module Download PDFInfo
- Publication number
- CN117440601B CN117440601B CN202311379915.3A CN202311379915A CN117440601B CN 117440601 B CN117440601 B CN 117440601B CN 202311379915 A CN202311379915 A CN 202311379915A CN 117440601 B CN117440601 B CN 117440601B
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- China
- Prior art keywords
- metal substrate
- top metal
- bottom metal
- power
- power chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 183
- 239000002184 metal Substances 0.000 claims abstract description 183
- 239000000758 substrate Substances 0.000 claims abstract description 178
- 230000017525 heat dissipation Effects 0.000 claims abstract description 28
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 2
- 101710149812 Pyruvate carboxylase 1 Proteins 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20845—Modifications to facilitate cooling, ventilating, or heating for automotive electronic casings
- H05K7/20854—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a power module, which comprises at least one PCB board, at least one power chip, at least one top metal substrate and at least one bottom metal substrate; the power chip is positioned between the top metal substrate and the bottom metal substrate and is placed in a hole formed in the PCB; the top metal substrate is connected with one surface of the power chip in the coverage area of the top metal substrate, and the surface is opposite to the top metal substrate on the power chip; the bottom metal substrate is connected to a surface of the power chip in its coverage area, the surface being the surface of the power chip opposite to the bottom metal substrate. The power chip is embedded into the PCB, so that the packaging structure of the power chip is simplified; the heat dissipation areas of the plate-type top metal substrate and the plate-type bottom metal substrate are large, and the plate-type top metal substrate and the plate-type bottom metal substrate are used as direct media between the power chip and the heat dissipation system, so that the heat conduction efficiency is higher, and the heat resistance is reduced.
Description
Technical Field
The invention relates to the technical field of power modules, in particular to a vehicle-standard-level double-sided heat dissipation power module.
Background
The vehicle-gauge power module usually adopts a liquid cooling heat dissipation mode. At present, the motor driver of the automobile generally uses 3 half-bridge power modules (automobile standard grade), and the liquid cooling heat dissipation structures of the 3 half-bridge power modules can be divided into a serial liquid cooling heat dissipation structure and a parallel liquid cooling heat dissipation structure. The half-bridge power module is usually divided from a radiating surface by adopting a single-side cooling radiating mode or a double-side cooling radiating mode. For example, the FS03MR12A6MA1B power module of Infineon directly contains 3 half-bridge power modules, and the heat dissipation of the motor controller usually adopts a single-sided cooling (liquid cooling) heat dissipation mode with a serial structure; in addition, the DANFOSS half-bridge plastic package power modules only contain 1 half-bridge power module, the motor controller applies 3 half-bridge plastic package power modules, and the heat dissipation of the motor controller adopts a single-sided cooling (liquid cooling) heat dissipation mode with a parallel structure; also Infineon HybridPACKTM DSC power module adopts double-sided cooling heat dissipation mode.
Although the cooling and heat dissipation mode in the prior art can solve the heat dissipation problem of the power module to a certain extent, the cooling and heat dissipation mode is limited by the influence of the packaging technology of the power module, and the problems of high thermal resistance, complex packaging structure, large parasitic inductance, poor module reliability and the like caused by long heat conduction route of the power chip still exist in the prior art, so that the problems need to be solved.
Disclosure of Invention
The invention aims to: the invention aims to provide a power module.
The technical scheme is as follows: the invention relates to a power module, which comprises at least one PCB board, at least one power chip, at least one top metal substrate and at least one bottom metal substrate;
the power chip is positioned between the top metal substrate and the bottom metal substrate and is placed in a hole formed in the PCB;
the top metal substrate is connected with one surface of the power chip in the coverage area of the top metal substrate, and the surface is opposite to the top metal substrate on the power chip;
the bottom metal substrate is connected to a surface of the power chip in its coverage area, the surface being the surface of the power chip opposite to the bottom metal substrate.
Preferably, the gate electrodes of the power chips are electrically connected with the PCB, and the PCB is provided with connecting ends at the gate electrode positions of the power chips, and the gate electrodes of the power chips are electrically connected with the corresponding printed circuit on the connecting ends.
Preferably, an upper concave area is arranged on the upper surface of the PCB, the top metal substrate is embedded into the upper concave area, and the upper surface of the top metal substrate is flush with the upper surface of the PCB.
Preferably, the lower surface of the PCB is provided with a lower concave area, the bottom metal substrate is embedded into the lower concave area, and the lower surface of the bottom metal substrate is flush with the lower surface of the PCB.
Preferably, the top metal substrate is provided with a top metal substrate boss, and the surface of the power chip opposite to the top metal substrate is connected with the top metal substrate through the top metal substrate boss.
Preferably, the bottom metal substrate is provided with a bottom metal substrate boss, and the surface of the power chip opposite to the bottom metal substrate is connected with the bottom metal substrate through the bottom metal substrate boss.
Preferably, the distance between the side edges of the top metal substrate boss and the bottom metal substrate boss and the side edges of the power chip is smaller than 5mm, and the height of the top metal substrate boss and the bottom metal substrate boss is smaller than 2mm.
Preferably, the PCB is further provided with a power terminal, and the power terminal is embedded into the PCB and is flush with the surface of the PCB.
Preferably, a portion of the top metal substrate and a portion of the bottom metal substrate serve as power terminals of the power module for electrically conductive connection with an external circuit.
Preferably, the power terminal includes a direct current positive terminal, a direct current negative terminal, or an alternating current terminal.
Preferably, gaps exist among the top metal substrate, the bottom metal substrate and the PCB, among the top metal substrate, the bottom metal substrate and the power chip, and among the power chip and the PCB, and insulating materials are filled in the gaps.
Preferably, the top metal substrate and the bottom metal substrate are connected with a heat dissipation system, and a heat conduction insulating material layer is arranged among the top metal substrate, the bottom metal substrate and the heat dissipation system.
Preferably, each of the top metal substrate and each of the bottom metal substrate are each a monolithic conductive metal plate.
Preferably, the top metal substrate and the bottom metal substrate are respectively connected with the PCB in a conductive manner or in a non-conductive manner.
The beneficial effects are that: compared with the prior art, the invention discloses a power module, which has the following beneficial effects:
1. The power chip is embedded into the PCB, so that the packaging structure of the power chip is simplified;
2. the gate electrode of the power chip is directly connected with the printed circuit of the PCB without adopting a bonding wire connection mode, so that the packaging structure of the power chip is simplified, and the parasitic inductance of the power module is reduced;
3. The top metal substrate and the bottom metal substrate are adopted to connect each pole of the power chip, so that the packaging structure of the power module is simplified;
4. The heat dissipation areas of the plate-type top metal substrate and the plate-type bottom metal substrate are large, unlike the complex heat conduction structures in the prior art, the heat conduction efficiency is higher, and the thermal resistance is reduced because the top metal substrate and the bottom metal substrate are used as direct media between the power chip and the heat dissipation system;
5. The module consisting of the PCB, the top metal substrate and the bottom metal substrate has the advantages that compared with the prior art, the whole structure is greatly simplified, and meanwhile, the reliability of the module is improved;
6. the top metal substrate and the bottom metal substrate are connected with a heat dissipation system to realize double-sided heat dissipation.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic cross-sectional view of FIG. 1;
FIG. 3 is a partial schematic view of the structure of FIG. 2;
Fig. 4 is a schematic view of the structure of the present invention, with the top metal substrate and ac terminals removed.
In the figure: 1-a PCB board; 101-well; 102-an upper recessed region; 11-printed wiring; 21-a top metal substrate; 22-a bottom metal substrate; 221-top metal substrate boss; 222-bottom metal substrate boss; 31-a direct current positive terminal; 32-a dc negative terminal; 33-alternating current terminals; 4-power chip: 41-gate.
Detailed Description
The invention will be further illustrated with reference to specific examples.
Example 1
As shown in fig. 1 to 4, the present invention provides a power module comprising at least one PCB board 1, at least one power chip 4, at least one top metal substrate 21 and at least one bottom metal substrate 22. The power chip 4 is located between the top metal substrate 21 and the bottom metal substrate 22, and the power chip 4 is placed in a hole 101 opened in the PCB board 1.
The top metal substrate 21 is connected to one surface of the power chip 4 in its covered area, which is the surface of the power chip 4 opposite to the top metal substrate 21; the bottom metal substrate 22 is connected to one surface of the power chip 4 in its covered area, which is the surface of the power chip 4 opposite to the bottom metal substrate 22.
The "surface" may be a pole of the power chip 4, and if the power chip 4 is an IGBT chip, it is a collector or an emitter. If the power chip 4 is a SiC chip, it is a source or a drain.
The "surface" may be not the pole of the power chip 4, but the surface of the power chip 4. Since the thickness of the power chip 4 is generally small, heat is generated during operation, and the top metal substrate 21 and the bottom metal substrate 22 are connected with the surface of the power chip 4, the power chip 4 can be fixed, so that the power chip 4 cannot shake or deform, and the heat generated by the power chip 4 can be led out for heat dissipation. When the "surface" is the "pole" of the power chip 4, the top metal substrate 21 and the bottom metal substrate 22 may be electrically connected to the power chip 4 or electrically disconnected from each other, and the specific connection mode depends on the circuit structure of the power module, and the connection mode is selected according to the requirement.
A plurality of holes 101 can be arranged on the PCB 1, a power chip 4 can be arranged in each hole 101, or not all of the holes 101 are provided with power chips 4, other chips or components required to make up the power module may be provided in the holes 101. The top metal substrate 21 and the bottom metal substrate 22 are connected to an external heat dissipation system.
Example 2
On the basis of embodiment 1, the gate electrodes of the power chips 4 are electrically connected to the PCB board 1, and as shown in fig. 2 and 3, the PCB board 1 is provided with connection terminals at the gate electrode positions of the power chips 4, and the gate electrode of each power chip 4 is electrically connected to the corresponding printed circuit 11 on the connection terminal. The gate electrode of the power chip 4 is directly connected with the printed circuit in a conductive manner, such as metal sintering, solder welding or bonding, instead of adopting a bonding wire connection manner with the connection end 11, so that parasitic inductance of the power module can be reduced.
Example 3
On the basis of embodiment 1, the upper surface of the PCB board 1 is provided with an upper concave area 102, the top metal substrate 21 is embedded in the upper concave area 102, the upper surface of the top metal substrate 21 is flush with the upper surface of the PCB board 1, and the upper surface of the top metal substrate 21 becomes a part of the top surface of the power module.
The lower surface of the PCB 1 is provided with a lower concave area, the bottom metal substrate 22 is embedded into the lower concave area, the lower surface of the bottom metal substrate 22 is flush with the lower surface of the PCB, and the lower surface of the bottom metal substrate 22 becomes a part of the bottom surface of the power module.
Example 4
On the basis of embodiment 1, the top metal substrate 21 is provided with a top metal substrate boss 221, and the surface of the power chip 4 opposite to the top metal substrate 21 is connected to the top metal substrate 21 through the top metal substrate boss 221; the bottom metal substrate 22 is provided with a bottom metal substrate boss 222, and the surface of the power chip 4 opposite to the bottom metal substrate 22 is connected with the bottom metal substrate 22 through the bottom metal substrate boss 222. On this basis, as shown in fig. 3, a top metal substrate boss 221 is disposed at a position corresponding to a pole of the power chip 4 in the coverage area of the top metal substrate 21, which is opposite to the pole except the gate, and the pole of the power chip 4 is electrically connected to the top metal substrate 21 through the top metal substrate boss 221. In addition, a bottom metal substrate boss 222 is disposed at a position corresponding to a pole of the power chip 4 in the coverage area except the gate, and the pole of the power chip 4 is electrically connected to the bottom metal substrate 22 through the bottom metal substrate boss 222. The top metal substrate boss 221 and the bottom metal substrate boss 222 not only make the top metal substrate and the bottom metal substrate electrically connected with the power chip 4 respectively, but also make the gate of the power chip 4 keep a certain distance from the top metal substrate 21 and the bottom metal substrate 22 to meet the safety insulation requirement, and simultaneously fix the power chip 4 to dissipate heat of the power chip 4.
On the basis of embodiment 1, the surface of the power chip 4, which is not the electrode, can be connected with the top metal substrate and the bottom metal substrate respectively through the top metal substrate boss and the bottom metal substrate boss, so that the safety insulation requirement of the power chip 4 can be met, and the power chip 4 can be fixed to dissipate heat of the power chip 4.
Example 5
On the basis of embodiment 4, the distance between the side edges of the top metal substrate boss 221 and the bottom metal substrate boss 222 and the side edge of the power chip 4 is less than 5mm, respectively, and the height of the top metal substrate boss 221 and the bottom metal substrate boss 222 is less than 2mm.
Example 6
A part of the top metal substrate 21 and a part of the bottom metal substrate 22 may be used as power terminals of the power module of the present invention, specifically, the power terminals include a dc positive terminal 31, a dc negative terminal 32, and an ac terminal 33, respectively, on the basis of embodiment 1. The direct current positive electrode terminal 31, the direct current negative electrode terminal 32 and the alternating current terminal 33 are embedded in the PCB board 1 together with the top metal substrate 21 or the top metal substrate 22, and are flush with the surface of the PCB board 1. Further, the dc positive terminal 31 and the dc negative terminal 32 may be symmetrically disposed on the upper and lower surfaces of the PCB board 1, and the dc positive terminal 31 and the dc negative terminal 32 disposed in an overlapping manner can reduce parasitic inductance.
Example 7
On the basis of embodiment 1, gaps exist among the top metal substrate 21, the bottom metal substrate 22 and the PCB board 1, among the top metal substrate 21, the bottom metal substrate 22 and the power chip 4, and between the power chip 4 and the PCB board 1, and insulating materials are filled in the gaps to improve the safety insulation capability between each other.
Example 8
On the basis of embodiment 1, a heat conducting insulating material layer is arranged between the top metal substrate 21, the bottom metal substrate 22 and the heat dissipation system, so that the heat dissipation effect can be ensured, and the insulation requirement can be met.
Example 9
On the basis of embodiment 1, each of the top metal substrates 31 and each of the bottom metal substrates 33 are each a monolithic metal plate, such as a monolithic copper plate, aluminum plate, or other metal plate capable of satisfying the requirements, and are free of an insulating layer. The top metal substrate 21 and the bottom metal substrate 22 are electrically connected or electrically non-connected to the PCB board 1, respectively, depending on the circuit configuration of the power module. The surfaces of the top metal substrate 21 and the bottom metal substrate 22 may be surface treated to improve corrosion resistance and heat dissipation.
The number of the power chips 4, the PCB board 1, the top metal substrate 21, the bottom metal substrate 22, the ac terminal 33, the dc positive terminal 31, the dc negative terminal 32, the number, the positions, the connection relationship, and the like in the present invention are all determined according to the specific circuit structure of the power module, and are not unique, and the above embodiments are only for understanding the technical scheme of the present invention, and the protection scope of the present invention is not limited to the technical scheme of the above specific embodiments.
Claims (9)
1. A power module, characterized by: comprises at least one PCB board, at least one power chip, at least one top metal substrate and at least one bottom metal substrate;
the power chip is positioned between the top metal substrate and the bottom metal substrate and is placed in a hole formed in the PCB;
the top metal substrate is connected with one surface of the power chip in the coverage area of the top metal substrate, and the surface is opposite to the top metal substrate on the power chip;
the bottom metal substrate is connected with one surface of the power chip in the coverage area of the bottom metal substrate, and the surface is the surface, opposite to the bottom metal substrate, of the power chip;
The upper surface of the PCB is provided with an upper concave area, the top metal substrate is embedded into the upper concave area, and the upper surface of the top metal substrate is flush with the upper surface of the PCB; the lower surface of the PCB is provided with a lower concave area, the bottom metal substrate is embedded into the lower concave area, and the lower surface of the bottom metal substrate is flush with the lower surface of the PCB;
The top metal substrate is provided with a top metal substrate boss, and the surface, opposite to the top metal substrate, of the power chip is connected with the top metal substrate through the top metal substrate boss; the bottom metal substrate is provided with a bottom metal substrate boss, and the surface, opposite to the bottom metal substrate, of the power chip is connected with the bottom metal substrate through the bottom metal substrate boss.
2. A power module according to claim 1, characterized in that: the gate electrodes of the power chips are electrically connected with the PCB, and connecting ends are arranged at the positions of the gate electrodes of the power chips, and the gate electrodes of the power chips are electrically connected with the corresponding printed circuits on the connecting ends.
3. A power module according to claim 1, characterized in that: the distance between the side edges of the top metal substrate boss and the bottom metal substrate boss and the side edges of the power chip is smaller than 5mm, and the height of the top metal substrate boss and the bottom metal substrate boss is smaller than 2mm.
4. A power module according to claim 1, characterized in that: a portion of the top metal substrate and a portion of the bottom metal substrate serve as power terminals of the power module for electrically conductive connection with an external circuit.
5. A power module according to claim 4, wherein: the power terminal includes a direct current positive terminal, a direct current negative terminal, or an alternating current terminal.
6. A power module according to claim 1, characterized in that: and gaps exist between the top metal substrate, the bottom metal substrate and the PCB, and insulating materials are filled in the gaps.
7. A power module according to claim 1, characterized in that: the top metal substrate and the bottom metal substrate are connected with the heat dissipation system, and a heat conduction insulating material layer is arranged among the top metal substrate, the bottom metal substrate and the heat dissipation system.
8. A power module according to claim 1, characterized in that: the top metal substrate and the bottom metal substrate are each monolithic conductive metal plates.
9. A power module according to claim 1, characterized in that: the top metal substrate and the bottom metal substrate are respectively connected with the PCB in a conductive mode or in a non-conductive mode.
Priority Applications (1)
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CN202311379915.3A CN117440601B (en) | 2023-10-23 | 2023-10-23 | Power module |
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CN202311379915.3A CN117440601B (en) | 2023-10-23 | 2023-10-23 | Power module |
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CN117440601A CN117440601A (en) | 2024-01-23 |
CN117440601B true CN117440601B (en) | 2024-08-02 |
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CN202311379915.3A Active CN117440601B (en) | 2023-10-23 | 2023-10-23 | Power module |
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Citations (1)
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CN105453256A (en) * | 2013-06-11 | 2016-03-30 | At&S奥地利科技与系统技术股份公司 | Power module |
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US6376908B1 (en) * | 1997-12-10 | 2002-04-23 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor plastic package and process for the production thereof |
JP2003324167A (en) * | 2002-02-26 | 2003-11-14 | Kyocera Corp | Ceramic circuit board |
TWI281736B (en) * | 2005-10-26 | 2007-05-21 | Delta Electronics Inc | Power module fabrication method and structure thereof |
US9041183B2 (en) * | 2011-07-19 | 2015-05-26 | Ut-Battelle, Llc | Power module packaging with double sided planar interconnection and heat exchangers |
ITUB20153344A1 (en) * | 2015-09-02 | 2017-03-02 | St Microelectronics Srl | ELECTRONIC POWER MODULE WITH IMPROVED THERMAL DISSIPATION AND ITS MANUFACTURING METHOD |
EP3584833B1 (en) * | 2018-06-19 | 2021-09-01 | Mitsubishi Electric R&D Centre Europe B.V. | Power module with improved alignment |
CN109727969A (en) * | 2018-12-29 | 2019-05-07 | 华进半导体封装先导技术研发中心有限公司 | A kind of substrate flush type power device packaging structure and its manufacturing method |
CN110854103B (en) * | 2019-11-09 | 2021-04-16 | 北京工业大学 | Embedded double-side interconnection power module packaging structure and manufacturing method |
CN111010801A (en) * | 2019-12-30 | 2020-04-14 | 安捷利(番禺)电子实业有限公司 | Double-side heat dissipation chip packaging structure, method and device |
US11380646B2 (en) * | 2020-05-14 | 2022-07-05 | Life-On Semiconductor Corporation | Multi-sided cooling semiconductor package and method of manufacturing the same |
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CN105453256A (en) * | 2013-06-11 | 2016-03-30 | At&S奥地利科技与系统技术股份公司 | Power module |
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