CN214477399U - Double-sided heat dissipation IGBT module without lead bonding - Google Patents
Double-sided heat dissipation IGBT module without lead bonding Download PDFInfo
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- CN214477399U CN214477399U CN202120331022.1U CN202120331022U CN214477399U CN 214477399 U CN214477399 U CN 214477399U CN 202120331022 U CN202120331022 U CN 202120331022U CN 214477399 U CN214477399 U CN 214477399U
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- insulating substrate
- igbt module
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- terminal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a double-sided heat dissipation IGBT module of no lead bonding, including IGBT module body, IGBT module body mainly includes relative upper insulation base plate, lower insulation base plate that sets up and sets up terminal and chip part between two insulation base plates, upper insulation base plate and lower insulation base plate all include ceramic insulation layer and set up first metal level and the second metal level at ceramic insulation layer upper and lower surface, the second metal level includes the metal conducting layer and adheres to the insulating solder mask on the metal conducting layer, insulating solder mask is used for controlling the welding regional scope of upper insulation base plate and lower insulation base plate; the terminals and the chip parts are soldered on the metal conducting layer between the second metal layers of the two insulating substrates through solder soldering, and the chip parts, the chip parts and the conducting layers corresponding to the two insulating substrates, and the conducting layers and the terminals of the two insulating substrates are electrically connected through solder soldering.
Description
Technical Field
The utility model relates to an electron device technical field, concretely relates to double-sided heat dissipation IGBT module of no lead bonding.
Background
A power module is a power driver that combines power electronics and integrated circuit technology. The intelligent power module gains a bigger and bigger market due to the advantages of high integration level, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is a common power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. With the wide application of the IGBT module in the fields of traffic, new energy and the like, the requirement of the market on the IGBT module is higher and higher. At present, a back single-side cooling mode is generally adopted by a common welding type IGBT module, the heat dissipation capacity is low, the thermal resistance is large, chip parts are connected through bonding leads, hundreds of bonding points exist in a single IGBT module, and the single bonding point falls off, so that the reliability of the module is directly influenced.
Disclosure of Invention
The to-be-solved technical problem of the utility model lies in, to the above-mentioned defect of prior art, provide a can reduce the module size, reduce the module thermal resistance, further improve the double-sided heat dissipation IGBT module of leadless bonding of module reliability.
The utility model aims at completing through the following technical scheme, a double-sided heat dissipation IGBT module of no lead bonding, including IGBT module body, IGBT module body mainly includes relative upper insulation substrate, lower insulation substrate and terminal and the chip part of setting between two insulation substrates that sets up, upper insulation substrate and lower insulation substrate all include ceramic insulation layer and set up first metal level and the second metal level at ceramic insulation layer upper and lower surface, the second metal level includes the metal conducting layer and adheres to the insulating solder mask on the metal conducting layer, insulating solder mask is used for controlling the welding regional scope of upper insulation substrate and lower insulation substrate; the terminals and the chip parts are soldered on the metal conducting layer between the second metal layers of the two insulating substrates through solder soldering, and the chip parts, the chip parts and the conducting layers corresponding to the two insulating substrates, and the conducting layers and the terminals of the two insulating substrates are electrically connected through solder soldering.
Furthermore, the chip part is a double-sided weldable chip part, and the gap area between the upper insulating substrate and the lower insulating substrate is filled with insulating gel for improving the voltage-resistant insulating performance between the original devices.
Further, the terminals are distributed on two sides of the IGBT module body in the width direction, the terminals comprise power terminals and signal terminals, the power terminals and the signal terminals are of flexible structures, one side, close to the two insulating substrates, of each terminal is provided with an insulating protective film, and the insulating protective films are made of polyimide films.
Furthermore, the first metal layer and the second metal layer of the upper insulating substrate and the lower insulating substrate are both exposed or electroplated with a layer of weldable metal material.
Furthermore, the chip part is connected with the upper insulating substrate and the lower insulating substrate in a welding mode, the welding is made of one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials, and the highest welding temperature is 100-400 degrees.
Furthermore, the terminal is made of copper or silver, a layer of weldable metal material is exposed or electroplated on the surface layer of the terminal, the terminal is welded between the conducting layers of the upper insulating substrate and the lower insulating substrate through soldering, the welding adopts one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials, and the highest welding temperature is 100-400 degrees.
The utility model has the advantages of: IGBT modular structure, all can cool off simultaneously in module top and bottom, and the module is inside does not have any bonding lead, uses insulating substrate metal level lug connection to can reduce the modular structure size, reduce the module thermal resistance, improve the module reliability.
Drawings
Fig. 1 is a schematic diagram of the explosion structure of the present invention;
FIG. 2 is a schematic side view of the exploded structure of the present invention;
FIG. 3 is a schematic side view of the present invention;
FIG. 4 is a schematic view of the structure of FIG. 3 in the direction A;
fig. 5 is a schematic diagram of the circuit structure of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more clearly understood by those skilled in the art, the present invention will be further described with reference to the accompanying drawings and examples.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", "inner", "outer", "lateral", "vertical", and the like are the directions or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a specific direction, and therefore, should not be construed as limiting the present invention.
As shown in fig. 1-5, the double-sided heat dissipation IGBT module without lead bonding according to the present invention includes an IGBT module body, the IGBT module body mainly includes an upper insulating substrate 1, a lower insulating substrate 2, and a terminal 3 and a chip portion 4 disposed between the two insulating substrates, the upper insulating substrate 1 and the lower insulating substrate 2 both include a ceramic insulating layer 5, and a first metal layer 6 and a second metal layer 7 disposed on the upper and lower outer surfaces of the ceramic insulating layer 5, the second metal layer 7 includes a metal conductive layer and an insulating solder mask 8 attached to the metal conductive layer, and the insulating solder mask 8 is used for controlling the welding area range of the upper insulating substrate 1 and the lower insulating substrate 2; the terminals 3 and the chip portions 4 are soldered to the metal conductive layers between the second metal layers 7 of the two insulating substrates by solder 9, and the chip portions 4, the chip portions 4 and the corresponding conductive layers of the two insulating substrates, and the conductive layers of the two insulating substrates and the terminals 3 are electrically connected by solder.
Referring to fig. 1-4, the chip portion 4 is a double-sided solderable chip portion, and the gap area between the upper insulating substrate 1 and the lower insulating substrate 2 is filled with an insulating gel 10 for improving the voltage-resistant insulating property between the original devices; the circuit connection between the chip part 3 and the insulating substrate and between the chip part and the chip part are directly conducted through the solder 9 without the need of wire connection.
Referring to fig. 4, the terminals 3 are distributed on two sides of the IGBT module body in the width direction, the terminals 3 include power terminals 11 and signal terminals 12, the power terminals 11 and the signal terminals 12 are both flexible structures, an insulating protective film 13 is disposed on one side of each terminal close to the two insulating substrates, and the insulating protective film 13 is made of a polyimide film. The circuit connection between the terminal 3 and the insulating substrate is directly conducted through the solder without lead connection.
Referring to fig. 1, the first metal layer 6 and the second metal layer 7 of the upper insulating substrate 1 and the lower insulating substrate 2 are both exposed or plated with a layer of solderable metal material such as electroplated gold, nickel or tin. The chip part 4 is connected with the upper insulating substrate 1 and the lower insulating substrate 2 in a welding mode, the welding is made of one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials, and the highest welding temperature is 100-400 degrees. The terminal is copper or silver, a layer of weldable metal material such as gold, nickel or tin is exposed or electroplated on the surface layer of the terminal 3, the terminal 3 is welded between the conducting layers of the upper insulating substrate and the lower insulating substrate through tin soldering, the welding adopts one of SnPb, SnAg, SnAgCu and PbSnAg welding materials, and the highest welding temperature is 100-400 degrees.
Between the chip part, between chip part and the corresponding conducting layer of insulating substrate, realize electrical connection through the direct intercommunication of solder between insulating substrate and the terminal, constitute like figure 4 circuit structure, realize the circuit function.
IGBT modular structure, all can cool off simultaneously in module top and bottom, and the module is inside does not have any bonding lead, uses insulating substrate metal level lug connection to can reduce the modular structure size, reduce the module thermal resistance, improve the module reliability.
The specific embodiments described herein are merely illustrative of the principles of the present invention and its efficacy, and are not intended to limit the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Therefore, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical idea of the present invention shall be covered by the claims of the present invention.
Claims (6)
1. Double-sided heat dissipation IGBT module of no wire bonding, including IGBT module body, its characterized in that: the IGBT module body mainly comprises an upper insulating substrate, a lower insulating substrate, a terminal and a chip part, wherein the upper insulating substrate and the lower insulating substrate are arranged oppositely, the terminal and the chip part are arranged between the two insulating substrates, the upper insulating substrate and the lower insulating substrate respectively comprise a ceramic insulating layer, a first metal layer and a second metal layer, the first metal layer and the second metal layer are arranged on the upper outer surface and the lower outer surface of the ceramic insulating layer, the second metal layer comprises a metal conducting layer and an insulating solder mask attached to the metal conducting layer, and the insulating solder mask is used for controlling the welding area range of the upper insulating substrate and the lower insulating substrate; the terminals and the chip parts are soldered on the metal conducting layer between the second metal layers of the two insulating substrates through solder soldering, and the chip parts, the chip parts and the conducting layers corresponding to the two insulating substrates, and the conducting layers and the terminals of the two insulating substrates are electrically connected through solder soldering.
2. The wirebond-less, double-sided, heat dissipating IGBT module of claim 1, wherein: the chip part is a double-sided weldable chip part, and the gap area between the upper insulating substrate and the lower insulating substrate is filled with insulating gel for improving the voltage-resistant insulating property between the original devices.
3. The wirebond-less, double-sided, heat dissipating IGBT module of claim 2, wherein: the terminal distributes on IGBT module body width direction's both sides edge, the terminal includes power terminal and signal terminal, just power terminal and signal terminal are flexible structure, and one side that the terminal is close to two insulation substrate is provided with the insulating protection film, and the material of insulating protection film is the polyimide film.
4. The wirebond-less, double-sided, heat dissipating IGBT module of claim 2 or 3, wherein: the first metal layer and the second metal layer of the upper insulating substrate and the lower insulating substrate are both exposed or electroplated with a layer of weldable metal material.
5. The wirebond-less, double-sided, heat dissipating IGBT module of claim 4, wherein: the chip part is connected with the upper insulating substrate and the lower insulating substrate in a welding mode, one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials is adopted for welding, and the highest welding temperature is 100-400 degrees.
6. The wirebond-less, double-sided, heat dissipating IGBT module of claim 4, wherein: the terminal is made of copper or silver, a layer of weldable metal material is exposed or electroplated on the surface layer of the terminal, the terminal is welded between the conducting layers of the upper insulating substrate and the lower insulating substrate through tin soldering, one of SnPb, SnAg, SnAgCu and PbSnAg welding materials is adopted for welding, and the highest welding temperature is 100-400 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120331022.1U CN214477399U (en) | 2021-02-05 | 2021-02-05 | Double-sided heat dissipation IGBT module without lead bonding |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120331022.1U CN214477399U (en) | 2021-02-05 | 2021-02-05 | Double-sided heat dissipation IGBT module without lead bonding |
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| CN214477399U true CN214477399U (en) | 2021-10-22 |
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| CN202120331022.1U Active CN214477399U (en) | 2021-02-05 | 2021-02-05 | Double-sided heat dissipation IGBT module without lead bonding |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112736049A (en) * | 2021-02-05 | 2021-04-30 | 上海道之科技有限公司 | Double-sided heat dissipation IGBT module of no lead bonding |
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2021
- 2021-02-05 CN CN202120331022.1U patent/CN214477399U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112736049A (en) * | 2021-02-05 | 2021-04-30 | 上海道之科技有限公司 | Double-sided heat dissipation IGBT module of no lead bonding |
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