CN117351883A

CN117351883A - Pixel structure, driving method thereof and display device

Info

Publication number: CN117351883A
Application number: CN202311378199.7A
Authority: CN
Inventors: 佟月; 王雷; 秦云科; 贾鹏; 王迎姿
Original assignee: BOE Technology Group Co Ltd; Beijing BOE Technology Development Co Ltd
Current assignee: BOE Technology Group Co Ltd; Beijing BOE Technology Development Co Ltd
Priority date: 2023-10-23
Filing date: 2023-10-23
Publication date: 2024-01-05

Abstract

The disclosure provides a pixel structure, a driving method thereof and a display device, belongs to the technical field of display, and can solve the problem that the resolution of a display panel is affected due to the fact that the number of wires in the existing pixel structure is large. In the pixel structure of the present disclosure, the driving transistor is configured to convert a driving voltage into a driving current in response to a data signal supplied from the data signal line, and write the driving current into the light emitting device; the photosensitive circuit is configured to be in a reverse bias state under the control of a bias voltage signal provided by a bias voltage signal line, and generates a detection electric signal according to an optical signal emitted by the light emitting device; the acquisition reading circuit is configured to respond to an acquisition control signal provided by the acquisition control signal line, acquire a detection electric signal and transmit the detection electric signal to the reading signal line; the read signal lines multiplex the data signal lines.

Description

Pixel structure, driving method thereof and display device

Technical Field

The disclosure belongs to the technical field of display, and particularly relates to a pixel structure, a driving method thereof and a display device.

Background

At present, fingerprint identification functions have become standard of other display products such as mobile phones. The fingerprint identification technology is divided into the under-screen fingerprint identification and the in-screen fingerprint identification, the under-screen fingerprint identification is realized by arranging the fingerprint identification sensor module at the lower side of the display panel, and the in-screen fingerprint identification is realized by directly integrating the fingerprint identification sensor module at the display panel, wherein the in-screen fingerprint identification can make the display product lighter and thinner. With the development of display products toward curved screens and folding screens, organic Light-Emitting Diode (OLED) display panels are also becoming the mainstream products. Therefore, the combination of the OLED display panel and the on-screen fingerprint identification technology is an important research direction of display products such as mobile phones in the future.

In the related art, in-screen fingerprint identification technology, an independent photosensitive circuit and an acquisition and reading circuit are added in a low-temperature polysilicon (Low Temperature Poly-Silicon, LTPS) backboard of an OLED display panel, so that not only can pixel unit space be occupied, but also display resolution and fingerprint detection accuracy can be affected.

Disclosure of Invention

The disclosure aims to at least solve one of the technical problems in the prior art, and provides a pixel structure, a driving method thereof and a display device.

In a first aspect, embodiments of the present disclosure provide a pixel structure, the pixel structure including: a pixel circuit; the pixel circuit includes: a data signal line, a driving transistor, and a light emitting device; the pixel structure further includes: the device comprises a bias voltage signal line, an acquisition control signal line, a reading signal line, a photosensitive circuit and an acquisition reading circuit;

the driving transistor is configured to convert a driving voltage into a driving current in response to a data signal supplied from a data signal line, and write the driving current into the light emitting device;

the photosensitive circuit is configured to be in a reverse bias state under the control of a bias voltage signal provided by a bias voltage signal line, and generates a detection electric signal according to an optical signal emitted by the light emitting device;

the acquisition and reading circuit is configured to respond to an acquisition control signal provided by an acquisition control signal line, acquire the detection electric signal and transmit the detection electric signal to a reading signal line;

the read signal line multiplexes the data signal lines.

Optionally, the photosensitive circuit includes: a photosensitive device; the acquisition and reading circuit comprises: an acquisition transistor;

one end of the photosensitive device is connected with a bias voltage signal line, and the other end of the photosensitive device is connected with a first pole of the acquisition transistor;

the control electrode of the acquisition transistor is connected with an acquisition control signal line, the first electrode is connected with the other end of the photosensitive device, and the second electrode is connected with the control electrode of the driving transistor.

the control electrode of the acquisition transistor is connected with an acquisition control signal line, the first electrode is connected with the other end of the photosensitive device, and the second electrode is connected with the second electrode of the driving transistor.

the control electrode of the acquisition transistor is connected with an acquisition control signal line, the first electrode is connected with the other end of the photosensitive device, and the second electrode is connected with the data signal line.

Optionally, the pixel circuit further includes: a first initialization transistor and a second initialization transistor; first poles of the first initializing transistor and the second initializing transistor are connected with an initializing signal line; a second electrode of the light emitting device is connected to a second power supply voltage line;

the bias voltage signal line multiplexes the initialization signal line or the second power voltage line.

Optionally, the pixel circuit further includes: a threshold compensation transistor; the control electrode of the threshold compensation transistor is connected with the first scanning signal line;

the acquisition control signal line multiplexes the first scanning signal line.

Optionally, the photosensitive circuit further includes: a storage capacitor;

one end of the storage capacitor is connected with one end of the photosensitive device, and the other end of the storage capacitor is connected with the other end of the photosensitive device.

Optionally, the photosensitive device includes: photodiodes, organic photodiodes or photosensitive electroluminescent diodes.

In a second aspect, embodiments of the present disclosure provide a display device including a pixel structure as provided above.

In a third aspect, an embodiment of the present disclosure provides a driving method of a pixel structure, for driving the pixel structure provided as above, the driving method of the pixel structure includes:

in a light emitting stage, converting a driving voltage into a driving current by a driving transistor in response to a data signal supplied from a data signal line, and writing the driving current into the light emitting device;

in the acquisition stage, a photosensitive circuit is utilized to generate a detection electric signal according to the light signal emitted by the light emitting device;

in the reading stage, responding to the acquisition control signal provided by the acquisition control signal line, acquiring the detection electric signal by using an acquisition reading circuit, and transmitting the detection electric signal to a reading signal line; wherein the read signal line multiplexes the data signal line.

Drawings

Fig. 1 is a schematic diagram of an exemplary fingerprint recognition circuit.

Fig. 2 is a schematic diagram of a first pixel structure according to an embodiment of the disclosure.

Fig. 3 is a timing diagram illustrating the operation of the pixel structure shown in fig. 2.

Fig. 4a to fig. 4f are schematic diagrams illustrating the on states of the transistors and the charging directions of the driving voltages in different stages in the pixel structure according to the embodiments of the present disclosure.

Fig. 5 is a schematic diagram of a second pixel structure according to an embodiment of the disclosure.

Fig. 6 is a schematic diagram of a third pixel structure according to an embodiment of the disclosure.

Fig. 7 is a timing diagram illustrating operation of the pixel structure shown in fig. 6.

Fig. 8 is a schematic diagram of a fourth pixel structure according to an embodiment of the disclosure.

Fig. 9 is a schematic diagram of a fifth pixel structure according to an embodiment of the disclosure.

Fig. 10 is a flowchart illustrating a driving method of a pixel structure according to an embodiment of the disclosure.

Detailed Description

In order that those skilled in the art will better understand the technical solutions of the present disclosure, the present disclosure will be described in further detail with reference to the accompanying drawings and detailed description.

Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.

The transistors employed in embodiments of the present disclosure may be thin film transistors or field effect transistors or other like devices of similar characteristics, and since the source and drain of the transistors employed are symmetrical, there is no distinction between source and drain. In the embodiments of the present disclosure, to distinguish between the source and the drain of the transistor, one of the poles is referred to as a first pole and the other pole is referred to as a second pole. Transistors can be further classified into N-type and P-type according to their characteristic distinction. When an N-type transistor is adopted, the grid electrode of the N-type transistor is controlled, the source electrode of the N-type transistor is used as the first electrode, and the drain electrode of the N-type transistor is used as the second electrode. When the gate inputs a high level, the source and drain are turned on. The control signals for the P-type transistors are reversed from those for the N-type transistors, and it is contemplated that implementation with P-type transistors would be readily apparent to one skilled in the art without undue burden and therefore is within the scope of the embodiments of the present disclosure. The first power supply voltage terminal may be a high level power supply voltage terminal, and the second power supply voltage terminal may be a low level power supply voltage terminal.

The light emitting device in the embodiments of the present invention is a current type light emitting device, and further, may be a Micro light emitting diode (Micro Light Emitting Diode, micro LED) or a Mini light emitting diode (Mini Light Emitting Diode, mini LED) or an organic electroluminescent diode (Organic Light Emitting Diode, OLED). In the embodiments of the present disclosure, the light emitting device is taken as an OLED as an example, and the first pole and the second pole of the light emitting device are respectively an anode and a cathode of the OLED.

Fig. 1 is a schematic structural diagram of an exemplary fingerprint recognition circuit, as shown in fig. 1, a fingerprint recognition circuit is integrally disposed on a substrate of an OLED display panel, and the fingerprint recognition circuit includes: a photosensitive circuit 101 and an acquisition and reading circuit 102. The photosensitive circuit 101 may be a photosensitive device, specifically, a Photodiode (PIN), an organic Photodiode (Organic Photo Diode, OPD), or a photosensitive electroluminescent diode, and a PIN will be exemplified in the embodiments of the present disclosure and the following description. The acquisition and readout circuit 102 may be a thin film transistor (Thin Film Transistor, TFT). One end of the photodiode is connected with the bias voltage signal line Vbias, and the other end is connected with the source electrode of the thin film transistor. The grid electrode of the thin film transistor is connected with the acquisition control signal line S (n), the source electrode of the thin film transistor is connected with the other end of the photodiode, and the drain electrode of the thin film transistor is connected with the reading signal line Read.

Therefore, the fingerprint identification circuit is at least connected with the bias voltage signal line Vbias, the acquisition control signal line S (n) and the reading signal line Read, the wiring quantity is large, and a certain degree of space occupation is caused for the pixel unit of the OLED display panel, so that the display resolution of the OLED display panel is influenced, and the fingerprint identification accuracy is also influenced.

In order to solve at least one of the above technical problems, an embodiment of the present disclosure provides a pixel structure, a driving method thereof, and a display device, and the pixel structure, the driving method thereof, and the display device provided by the embodiment of the present disclosure will be described in further detail with reference to the accompanying drawings and detailed description.

In a first aspect, an embodiment of the present disclosure provides a pixel structure, and fig. 2 is a schematic diagram of a first pixel structure provided in an embodiment of the present disclosure, as shown in fig. 2, where the pixel structure includes: a pixel circuit 100; the pixel circuit includes: a data signal line Vdata, a driving transistor DT, and a light emitting device OLED; the pixel structure further includes: bias voltage signal line Vbias, acquisition control signal line S (n), read signal line Read, photosensitive circuit 101, and acquisition Read circuit 102.

The driving transistor DT is configured to convert a driving voltage into a driving current in response to a data signal supplied from the data signal line Vdata, and write the driving current into the light emitting device OLED. The photosensitive circuit 101 is configured to be in a reverse bias state under control of a bias voltage signal supplied from the bias voltage signal line Vbias, and generates a detection electric signal from an optical signal emitted from the light emitting device OLED. The acquisition Read circuit 102 is configured to acquire a detection electric signal in response to an acquisition control signal supplied from the acquisition control signal line S (n), and transmit the detection electric signal to the Read signal line Read; the Read signal line Read multiplexes the data signal line Vdata.

The driving transistor DT in the pixel circuit 100 may convert a driving voltage into a driving current and write the driving current into the light emitting device OLED under the driving of the data signal supplied from the data signal line Vdata to drive the light emitting device OLED to emit light, thereby realizing a display function. It is understood that an OLED device comprises an anode, an organic layer group comprising at least one organic light emitting layer, and a cathode. It will be appreciated that under the application of an electrical current, the cathode injects electrons and the anode forms holes, which move towards each other across the layers and combine to release energy in the form of photons at the organic emissive layer, which occurs rapidly without interruption as the drive current passes through, thereby achieving continuous light emission.

The light sensing circuit 101 may generate a detection electric signal according to the number of light emitted from the light emitting device OLED. The acquisition and reading sub-circuit 102 can acquire and read the above detection electric signals, so as to realize a detection function. The detection electric signal can be used for detecting fingerprints and detecting heart rate, pressure, blood oxygen saturation, blood pressure, blood sugar, skin state and other signs. In the description of the embodiments of the present disclosure and the following description, fingerprint recognition will be described as an example.

The pixel structure provided by the embodiment of the disclosure not only can realize a display function, but also can realize fingerprint identification and other functions, wherein the original data signal line Vdata in the pixel circuit can be directly adopted as the Read signal line Read, and independent Read signal lines Read do not need to be independently arranged, so that the number of signal lines can be reduced, the occupation of excessive number of signal lines to the space of the pixel units of the OLED display panel is reduced, and therefore, the influence of the signal lines on the display resolution of the OLED display panel can be avoided, and the resolution of the OLED display panel can be improved.

It should be noted that the pixel circuit 100 may employ any type of driving circuit, for example, a 7T1C (including 7 transistors and 1 capacitor) circuit or an 11T3C (including 11 transistors and 3 capacitors) circuit, which is not particularly limited in this application. In the embodiments of the present disclosure and the following description, a 7T1C circuit will be used as an example of the pixel circuit 100.

Illustratively, as shown in fig. 2, the pixel circuit 1 includes 7 transistors (i.e., a first reset transistor T1, a threshold compensation transistor T2, a data writing transistor T3, a first light emission control transistor T4, a second light emission control transistor T5, a second reset transistor T6, and a driving transistor DT in the drawing) and 1 capacitor (i.e., a capacitor C1 in the drawing). The first reset transistor T1 and the threshold compensation transistor T2 are oxide transistors, belong to N-type transistors, and the data writing transistor T3, the first light emitting control transistor T4, the second light emitting control transistor T5, the second reset transistor T6, and the driving transistor DT are low-temperature polysilicon transistors, and belong to P-type transistors. It will be appreciated that the types of the respective transistors described above are only exemplary, and may be set according to actual needs, and will not be described in detail herein.

The first reset transistor T1 has a gate connected to the first scan signal line NG (n-1) at the previous stage, a source connected to the initialization signal line Vinit, and a drain connected to the gate of the driving transistor DT. The gate of the threshold compensation transistor T2 is connected to the first scan signal line NG (n), the source is connected to the drain of the driving transistor DT, and the drain is connected to the gate of the driving transistor DT. The data writing transistor T3 has a gate connected to the second scan signal line PG (n), a source connected to the data signal line Vdata, and a drain connected to the source of the driving transistor DT. The first light emitting control transistor T4 has a gate connected to the first light emitting control signal line EM (n), a source connected to the first power supply voltage signal line Vdd, and a drain connected to the source of the driving transistor DT. The second emission control transistor T5 has a gate connected to the second emission control signal line EM' (n), a source connected to the drain of the driving transistor DT, and a drain connected to the anode of the light emitting device OLED. The second reset transistor T6 has a gate connected to the second scan signal line PG (n), a source connected to the initialization signal line Vinit, and a drain connected to the anode of the light emitting device OLED. The anode of the light emitting device OLED is connected to the drain of the driving transistor DT and the cathode is connected to the second power voltage line VSS. One end of the capacitor C1 is connected to the gate of the driving transistor DT, and the other end is connected to the first power supply voltage line Vdd.

In some embodiments, as shown in fig. 2, the photosensitive circuit 101 includes: a photosensitive device D; the acquisition and readout circuit 102 includes: a collection transistor T7; one end of the photosensitive device D is connected with a bias voltage signal line Vbias, and the other end of the photosensitive device D is connected with a source electrode of the acquisition transistor T7; the gate of the acquisition transistor T7 is connected with an acquisition control signal line S (n), the source is connected with the other end of the photosensitive device D, and the drain is connected with the gate of the driving transistor DT.

The photosensitive device D may be a Photodiode (PIN), an organic Photodiode (Organic Photo Diode, OPD), or a photosensitive electroluminescent diode, in particular, a PIN will be exemplified in the embodiments of the present disclosure and the following description.

In some embodiments, the bias voltage signal line Vbias multiplexes the initialization signal line Vinit or the second supply voltage line Vss.

The bias voltage signal lines Vbias multiplex the initialization signal lines Vinit or the second power voltage lines Vss, and the original initialization signal lines Vinit or the second power voltage lines Vss in the pixel circuit can be directly used as the bias voltage signal lines Vbias, and independent bias voltage signal lines Vbias do not need to be set independently, so that the number of signal lines can be further reduced, the space occupation of the pixel units of the OLED display panel caused by excessive number of signal lines is reduced, and therefore the influence of the signal lines on the display resolution of the OLED display panel can be avoided, and the resolution of the OLED display panel can be improved.

In some embodiments, the acquisition control signal line S (n) multiplexes the first scanning signal line NG (n).

The acquisition control signal line S (n) multiplexes the first scanning signal line NG (n), the original first scanning signal line NG (n) in the pixel circuit can be directly adopted to be used as the acquisition control signal line S (n), and independent acquisition control signal lines S (n) do not need to be independently arranged, so that the number of signal lines can be further reduced, the occupation of the excessive number of signal lines on the space of the pixel unit of the OLED display panel is reduced, the influence of the signal lines on the display resolution of the OLED display panel can be avoided, and the resolution of the OLED display panel can be improved.

Fig. 3 is a timing chart of the operation of the pixel structure shown in fig. 2, and fig. 4a to 4f are schematic diagrams of the on states of the transistors and the charging directions of the driving voltages in different stages of the pixel structure according to the embodiment of the disclosure, and the operation process of the pixel structure according to the embodiment of the disclosure will be described in further detail with reference to fig. 3 and fig. 4a to 4 f.

And (3) a reset stage: the upper stage first scan signal line NG (n-1) inputs a high level signal, the first reset transistor T1 is turned on, the threshold compensation transistor T2, the data writing transistor T3, the first light emitting control transistor T4, the second light emitting control transistor T5, the second reset transistor T6, the collection transistor T7 are turned off, the gate node of the driving transistor DT is reset by an initialization signal provided by the initialization signal line Vinit, and stored on the capacitor C1, as shown in fig. 4 a. It will be appreciated that the arrow directions shown in fig. 4a to 4f represent the drive voltage charging direction and do not represent the current direction;

threshold compensation phase: the first scan signal line NG (n) outputs a high level signal, the second scan signal line PG (n) outputs a low level signal, the threshold compensation transistor T2, the data writing transistor T3, the second reset transistor T6, and the collecting transistor T7 are turned on, the first reset transistor T1, the first light emitting control transistor T4, and the second light emitting control transistor T5 are turned off, and the data signal Vdata supplied from the data signal line Vdata and the threshold voltage Vth of the driving transistor are written into the gate of the driving transistor DT via the driving transistor DT and the threshold compensation transistor T2, and stored on the capacitor C1. For the fingerprint area, the data signal line Vdata provides fingerprint identification potential required by fingerprint acquisition, and outside the fingerprint area, the data signal line Vdata provides display gray scale potential. At this time, vdata+vth is written to the second pole of the photosensor D, the bias voltage signal supplied from the bias voltage signal line Vbias is written to the first pole, and the photosensor D operates in the reverse bias state. At the same time this stage completes the resetting of the light emitting device OLED anode by the initialization signal supplied by the initialization signal line Vinit, as shown in fig. 4 b.

And (3) a luminous acquisition stage: the first light emission control signal line EM (n) and the second light emission control signal line EM' (n) output low level signals, the first light emission control transistor T4 and the second light emission control transistor T5 are turned on, the first reset transistor T1, the threshold compensation transistor T2, the data writing transistor T3, the second reset transistor T6 and the collection transistor T7 are turned off, and the light emitting device OLED emits light. At this time, the light-sensing device D starts to receive the light emitted from the light-emitting device OLED, and the potential change is maintained on the self capacitance of the light-sensing device D, as shown in fig. 4 c.

Reading: first, the first scanning signal line NG (n-1) of the previous stage outputs a high level signal, the first reset transistor T1 is turned on, the threshold compensation transistor T2, the data writing transistor T3, the first light emitting control transistor T4, the second light emitting control transistor T5, the second reset transistor T6, the collecting transistor T7 are turned off, and the gate of the driving transistor DT is reset by the initialization signal provided by the initialization signal line Vinit, as shown in fig. 4 d. Then, the first scanning signal line NG (n) outputs a high level signal, the threshold compensation transistor T2 and the collection transistor T7 are turned on, the first reset transistor T1, the data writing transistor T3, the first light emitting control transistor T4, the second light emitting control transistor T5 and the second reset transistor T6 are turned off, and the charge accumulated by the photosensitive device D is transferred to the gate of the driving transistor DT through the collection transistor T7 and stored on the capacitor C1, as shown in fig. 4 e. Finally, the second scan signal line PG (n) outputs a low level signal, the second emission control signal line EM' (n) outputs a low level signal, the data writing transistor T3, the second emission control transistor T5, the second reset transistor T6 are turned on, the first reset transistor T1, the threshold compensation transistor T2, the first emission control transistor T4, the collection transistor T7 are turned off, the voltage signal with the detection electric signal stored in the capacitor C1 is converted into a current signal through the driving transistor DT, and the current signal is Read row by the data writing transistor T3 and the data signal line Vdata (Read signal line Read), as shown in fig. 4 f.

Fig. 5 is a schematic diagram of a second pixel structure according to an embodiment of the disclosure, as shown in fig. 5, a photosensitive circuit 101 includes: a photosensitive device D; the acquisition and readout circuit 102 includes: a collection transistor T7; one end of the photosensitive device D is connected with a bias voltage signal line Vbias, and the other end of the photosensitive device D is connected with a source electrode of the acquisition transistor T7; the gate of the acquisition transistor T7 is connected with an acquisition control signal line S (n), the source is connected with the other end of the photosensitive device D, and the drain is connected with the drain of the driving transistor DT.

The pixel structure shown in fig. 5 is different from the pixel structure shown in fig. 2 in that in the pixel structure shown in fig. 2, the drain of the collecting transistor T7 is connected to the gate of the driving transistor DT, and in the pixel structure shown in fig. 5, the drain of the collecting transistor T7 is connected to the drain of the driving transistor DT. The implementation method is similar to the implementation method of the pixel structure shown in fig. 2, and the specific working process thereof may refer to the descriptions of fig. 3 and fig. 4a to fig. 4f, which are not described in detail herein.

Fig. 6 is a schematic diagram of a third pixel structure according to an embodiment of the disclosure, as shown in fig. 6, a photosensitive circuit 101 includes: a photosensitive device D; the acquisition and readout circuit 102 includes: a collection transistor T7; one end of the photosensitive device D is connected with a bias voltage signal line Vbias, and the other end of the photosensitive device D is connected with a source electrode of the acquisition transistor T7; the gate of the acquisition transistor T7 is connected with an acquisition control signal line S (n), the source is connected with the other end of the photosensitive device D, and the drain is connected with a data signal line Vdata.

The pixel structure shown in fig. 6 is different from the pixel structure shown in fig. 2 in that in the pixel structure shown in fig. 2, the drain of the collecting transistor T7 is connected to the gate of the driving transistor DT, and in the pixel structure shown in fig. 6, the drain of the collecting transistor T7 is connected to the data signal line Vdata. The acquisition control signal line S (n) is separately provided, and since the Read signal line Read multiplexes the data signal line Vdata, the electric signal converted from the optical signal received by the photosensitive device D can be directly transmitted to the data signal line Vdata (Read signal line Read), and the detection electric signal does not need to be stored in the capacitor C1.

Fig. 7 is a timing diagram of the operation of the pixel structure shown in fig. 6, and as shown in fig. 7, the difference from the timing diagram shown in fig. 3 is that, in the light emission acquisition stage, the light sensor D receives an optical signal and converts the optical signal into an electrical signal. In the reading phase, the acquisition control signal line S (n) is turned on row by row, and the charge of the photosensor D is directly Read row by row through the data signal line Vdata (Read signal line Read). The working process is simpler and more efficient.

Fig. 8 is a schematic diagram of a fourth pixel structure provided by an embodiment of the disclosure, fig. 9 is a schematic diagram of a fifth pixel structure provided by an embodiment of the disclosure, and the pixel structure shown in fig. 8 is different from the pixel structure shown in fig. 2, and the pixel structure shown in fig. 9 is different from the pixel structure shown in fig. 5 in that the photosensitive circuit further includes: a storage capacitor C2; one end of the storage capacitor C2 is connected with one end of the photosensitive device D, and the other end of the storage capacitor C2 is connected with the other end of the photosensitive device D.

In the pixel structure shown in fig. 8 and 9, the photosensitive device D is connected in parallel with the storage capacitor C2, so that the problem of strong light saturation of the photosensitive device D can be improved, jiang Guangneng force can be increased, and the saturation capacity of the photosensitive device D can be increased. The storage capacitor C2 may have a metal-nonmetal-metal structure, or may have a source-drain electrode of a thin film transistor shorted to one end and a gate electrode to the other end, which will not be described in detail herein.

In a second aspect, an embodiment of the present disclosure provides a display device, where the display device includes a pixel structure provided in any one of the embodiments above, and the display device may be any product or component having a display function, such as a television, a mobile phone, a display, a notebook computer, a digital photo frame, and a navigator. The implementation principle is similar to that of the pixel structure described above, and will not be described here again.

In a third aspect, embodiments of the present disclosure provide a driving method of a pixel structure, which is used to drive the pixel structure provided in any one of the above embodiments. Fig. 10 is a flowchart of a driving method of a pixel structure according to an embodiment of the disclosure, as shown in fig. 10, the driving method of the pixel structure includes the following steps S101 to S103.

S101, in a light emitting stage, in response to a data signal supplied from a data signal line, a driving voltage is converted into a driving current by a driving transistor, and the driving current is written into a light emitting device.

S102, in the acquisition stage, a detection electric signal is generated by utilizing a photosensitive circuit according to the light signal emitted by the light emitting device.

S103, in a reading stage, responding to the acquisition control signal provided by the acquisition control signal line, acquiring a detection electric signal by using an acquisition and reading circuit, and transmitting the detection electric signal to the reading signal line; wherein the read signal lines multiplex the data signal lines.

The driving method of the pixel structure provided in the embodiments of the present disclosure may refer to the description of the operation timing diagram shown in fig. 3, and the implementation principle is the same, which is not described in detail herein.

It is to be understood that the above embodiments are merely exemplary embodiments employed to illustrate the principles of the present disclosure, however, the present disclosure is not limited thereto. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the disclosure, and are also considered to be within the scope of the disclosure.

Claims

1. A pixel structure, the pixel structure comprising: a pixel circuit; the pixel circuit includes: a data signal line, a driving transistor, and a light emitting device; the pixel structure further includes: the device comprises a bias voltage signal line, an acquisition control signal line, a reading signal line, a photosensitive circuit and an acquisition reading circuit;

the read signal line multiplexes the data signal lines.

2. The pixel structure of claim 1, wherein the photosensitive circuit comprises: a photosensitive device; the acquisition and reading circuit comprises: an acquisition transistor;

3. The pixel structure of claim 1, wherein the photosensitive circuit comprises: a photosensitive device; the acquisition and reading circuit comprises: an acquisition transistor;

4. The pixel structure of claim 1, wherein the photosensitive circuit comprises: a photosensitive device; the acquisition and reading circuit comprises: an acquisition transistor;

5. A pixel structure according to any one of claims 2 to 4, wherein the pixel circuit further comprises: a first initialization transistor and a second initialization transistor; first poles of the first initializing transistor and the second initializing transistor are connected with an initializing signal line; a second electrode of the light emitting device is connected to a second power supply voltage line;

6. A pixel structure according to claim 2 or 3, wherein the pixel circuit further comprises: a threshold compensation transistor; the control electrode of the threshold compensation transistor is connected with the first scanning signal line;

the acquisition control signal line multiplexes the first scanning signal line.

7. A pixel structure according to claim 2 or 3, wherein the light sensing circuit further comprises: a storage capacitor;

8. The pixel structure of claim 2, wherein the photosensitive device comprises: photodiodes, organic photodiodes or photosensitive electroluminescent diodes.

9. A display device comprising the pixel structure according to any one of claims 1 to 8.

10. A driving method of a pixel structure for driving the pixel structure according to any one of claims 1 to 8, characterized in that the driving method of the pixel structure comprises: