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CN117316776B - Preparation method of heat dissipation device - Google Patents

Preparation method of heat dissipation device Download PDF

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Publication number
CN117316776B
CN117316776B CN202311276962.5A CN202311276962A CN117316776B CN 117316776 B CN117316776 B CN 117316776B CN 202311276962 A CN202311276962 A CN 202311276962A CN 117316776 B CN117316776 B CN 117316776B
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heat
liquid metal
heat dissipation
manufacturing
metal
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CN117316776A (en
Inventor
张嘉楠
曹勇
孙爱祥
羊尚强
窦兰月
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Shenzhen Hongfucheng New Material Co ltd
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Shenzhen Hongfucheng New Material Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C6/00—Coating by casting molten material on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A preparation method of a heat dissipation device belongs to the technical field of heat dissipation. The preparation method of the heat dissipation device comprises the following steps: coating: heating the heat dissipation element to 90-120 ℃, pouring liquid metal on the rotating heat dissipation element, and rotating the heat dissipation element to enable the liquid metal to flow so as to be spin-coated on the surface of the heat dissipation element; and (3) curing: cooling the heat dissipation element to room temperature, and solidifying the liquid metal on the surface of the heat dissipation element to form a heat conduction layer, wherein the thickness of the heat conduction layer is 5-20 mu m. Wherein the liquid metal comprises, by mass, 10-15% gallium, 50-75% indium, 8-40% bismuth and 5-28% tin. By using the method, the surface of the radiating element can be uniformly infiltrated in the coating process, the heat conducting layer which is uniformly distributed can be obtained after the temperature is reduced to the room temperature, the heat conducting layer can be well infiltrated on the radiating surface after being heated to be liquid, the heat can not flow on the radiating surface basically, and the heat exchange effect with the radiating surface is improved.

Description

Preparation method of heat dissipation device
Technical Field
The application relates to the technical field of heat dissipation, in particular to a preparation method of a heat dissipation device.
Background
With the continuous progress of technology, electronic components and electronic devices are being miniaturized and miniaturized, but the negative effects caused by the heat dissipation problem are also increasing. Heat dissipation designs have become an important component of the modern electronics industry.
Currently, heat is typically dissipated from electronic components and electronic devices using thermally conductive insulating materials. Liquid metal is a novel alloy medium which presents a fluid state at the working temperature and has a high heat transfer coefficient. The current liquid metal is mainly GaInSn metal, and is smeared on the surface of a vapor chamber or a radiator when in use.
At present, in the operation process of radiating the soaking plate by using liquid metal, the liquid metal is generally coated on the radiating surface. In order to avoid the situation that the coated liquid metal flows out of the heat dissipation surface of the vapor chamber to cause short circuit of energized nodes on a surrounding circuit and burning of devices, a layer of protective material is often manufactured around the vapor chamber. But the protective material is typically a ring of foam. But set up the protection bubble cotton and can occupy great volume to the metal liquid in the coating process also can flow into the bubble cotton inside, leads to the content reduction of metal liquid of radiating surface department, reduces radiating efficiency.
Disclosure of Invention
Based on the above-mentioned shortcomings, the present application provides a method for manufacturing a heat dissipating device, so as to partially or completely improve the problem of low heat dissipating efficiency in the related art.
The application is realized in the following way:
In a first aspect, an example of the present application provides a method for manufacturing a heat dissipating device, including:
Coating: heating the heat dissipation element to 90-120 ℃, covering the rotating heat dissipation element with liquid metal, and rotating the heat dissipation element to enable the liquid metal to flow so as to spin-coat the surface of the heat dissipation element;
And (3) curing: and cooling the heat dissipation element to room temperature, so that the liquid metal on the surface of the heat dissipation element is solidified to form a heat conduction layer. The thickness of the heat conducting layer is 5-20 mu m.
Wherein the liquid metal comprises, by mass fraction, 10-15% gallium, 50-75% indium, 8-40% bismuth and 5-28% tin.
In the implementation process, after the liquid metal with the components comprising 10-15wt% of gallium, 50-75wt% of indium, 8-40wt% of bismuth and 5-28wt% of tin is covered on the surface of the rotating heat dissipation element, the liquid metal on the surface of the heat dissipation element flows on the surface of the heat dissipation element under the action of centrifugal force, and is spin-coated on the surface of the heat dissipation element. In addition, in the coating process, the heat radiating element is heated to 90-120 ℃, the liquid metal is not solidified in the spin coating process, the liquid metal can be uniformly coated on the heat radiating surface, and the heat radiating element can be solidified to form a uniform heat conducting layer with the thickness of 5-20 mu m after being cooled to room temperature. According to the preparation method provided by the example of the application, a relatively uniform heat conducting layer can be formed on the heat radiating surface, the heat conducting layer is solid at normal temperature and does not flow, when the heat radiating element works to generate heat, the temperature of the heat conducting layer is increased, the heat conducting layer is converted into a liquid state, the heat radiating surface can be well infiltrated, the heat exchanging effect with the heat radiating surface is improved, and the heat radiating effect is further improved. The thickness of the heat conduction layer is 5-20 mu m, and the liquid gallium-indium-bismuth-tin alloy can fully infiltrate the surface of the heat dissipation element, basically does not flow on the surface of the heat dissipation element and basically does not flow out of the surface of the heat dissipation element.
With reference to the first aspect, in an alternative embodiment of the present application, a method for preparing liquid metal includes:
According to the composition ratio of the liquid metal, mixing gallium metal, indium metal, bismuth metal and tin metal, and vacuum smelting for 1-5h at 300-500 ℃.
In the implementation process, the metal gallium, the metal indium, the metal bismuth and the metal tin which are weighed according to the mass ratio are mixed and are vacuum smelted for 1-5 hours at the temperature of 300-500 ℃, so that the gallium-indium-bismuth-tin alloy molten metal with uniform dispersion can be obtained.
With reference to the first aspect, in an alternative embodiment of the application, after smelting is completed, the temperature of the liquid metal is adjusted to 90-120 ℃ and stirred at a speed of 300-500rad/min for 20-40min.
In the implementation process, the molten metal of the gallium-indium-bismuth-tin alloy after smelting is cooled to 90-120 ℃, and is stirred at the speed of 300-500rad/min for 20-40min, so that the molten metal with uniform components and lower temperature can be obtained, and the molten metal can be spin-coated on the surface of the radiating element in the subsequent coating process.
With reference to the first aspect, in an alternative embodiment of the present application, a method for covering a rotating heat-dissipating component with a liquid metal includes:
and filling the liquid metal into a container with a liquid outlet, controlling the temperature of the liquid metal in the container to be 90-120 ℃, and covering the liquid metal in the container on the rotating heat radiating element from the liquid outlet.
In the implementation process, the temperature of the liquid metal in the container is controlled to be 90-120 ℃, and the liquid metal can be spin-coated on the surface of the radiating element under the action of centrifugal force in the subsequent coating process.
With reference to the first aspect, in an alternative embodiment of the present application, the method for covering the liquid metal on the rotating heat dissipation element further includes:
And placing the heat dissipation element on a rotary table heated to 90-120 ℃, and covering the liquid metal in the container on the rotary heat dissipation element from the liquid outlet.
In the implementation process, the heated rotary table is utilized, so that the heat radiating element can rotate in the coating process, liquid metal can flow and spin on the surface of the heat radiating element under the action of centrifugal force, heat can be preserved for the heat radiating element in the spin coating process, and the probability of solidification of the liquid metal before the spin coating is uniform is reduced.
In combination with the first aspect, in an alternative embodiment of the present application, the flow rate of the liquid outlet is 3-9mm/s, the distance between the liquid outlet and the heat dissipation element is 1-5mm, and the rotation speed of the rotating table is 300-400rad/min.
In the implementation process, the flow speed of the liquid outlet is 3-9mm/s, the distance between the liquid outlet and the heat radiating element is 1-5mm, and the rotating speed of the rotating table is 300-400rad/min, so that the probability that more metal alloy is gathered at the center of the surface of the heat radiating element and cannot be uniformly and densely paved can be reduced, the probability that the liquid metal is exposed in high-temperature air for a long time to form an oxide film can be reduced, and the coating quality and the heat conductivity can be improved. The distance between the liquid outlet and the heat radiating element is 1-5mm, so that the probability of excessively fast thickening of the liquid metal in the pouring process due to temperature reduction can be reduced, and the uniformity of subsequent spin coating can be improved. And the rotating speed of the rotating table is 300-400rad/min, so that the probability that the centrifugal force of the liquid metal is larger than the friction force and directly flies out of the surface of the heat radiating element due to overlarge inertia force can be reduced, and the probability that cohesion among the liquid metals is reduced to obtain a uniformly coated heat radiating device layer can be reduced.
With reference to the first aspect, in an alternative embodiment of the present application, in the curing step, the method for cooling the heat dissipating element to room temperature and solidifying the liquid metal on the surface of the heat dissipating element to form the heat conducting layer includes:
and closing the rotary table, stopping the rotary table from rotating, and stopping heating.
In the implementation process, the liquid metal is rotated under the action of centrifugal force at a higher temperature of 90-120 ℃ to carry out spin coating, after spin coating is finished, the rotary table is closed, the heat radiating element is stopped rotating and cooled, and a layered heat radiating device which is stable at room temperature and uniformly dispersed can be obtained.
In combination with the first aspect, in an alternative embodiment of the application, the composition of the liquid metal comprises 5-10wt% gallium, 50-72wt% indium, 8-40wt% bismuth and 10-28wt% tin.
With reference to the first aspect, in an alternative embodiment of the application, the heat-dissipating element is a heat sink having a heat-dissipating surface for heat exchange with a heat source, and the liquid metal is coated on the heat-dissipating surface of the rotating heat sink.
In the implementation process, the liquid metal is covered on the radiating surface of the radiator, the liquid metal is uniformly spin-coated on the radiating surface under the action of centrifugal force, and a uniform heat conduction layer is formed after solidification. The heat conducting layer becomes liquid after the temperature of the heat radiating surface is increased, so that the heat radiating surface is fully soaked, and the heat radiating performance of the radiator can be improved.
With reference to the first aspect, in an alternative embodiment of the present application, the heat dissipating element is a vapor chamber, and the liquid metal is coated on the rotating vapor chamber.
In the implementation process, the liquid metal is covered on the soaking plate, the liquid metal is uniformly spin-coated on the surface of the soaking plate under the action of centrifugal force, and a uniform heat conduction layer is formed after solidification. The soaking plate of the heat conducting layer becomes liquid after the temperature is increased, so that the surface of the soaking plate is fully soaked, and the heat dissipation performance of the soaking plate is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
Fig. 1 is a schematic diagram of a preparation flow of a heat dissipating device according to an example of the present application;
fig. 2 is a real object comparison chart before and after coating according to an embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only for illustrating the present application and should not be construed as limiting the scope of the present application. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The current liquid metal is mainly GaInSn metal, which is liquid at room temperature. In the preparation of heat dissipating devices, a liquid metal is typically applied to the surface of a chip or heat sink. At room temperature, the molten metal flows, so that the surface of the chip or the radiator cannot be uniformly contacted by the molten metal, and the heat radiation efficiency of the chip or the radiator is affected.
At present, in order to prevent the metal liquid from flowing out of the heat dissipation surface of the chip or the heat sink at room temperature, which causes short circuit of energized nodes and burning of devices on surrounding circuits, a layer of protective material is often manufactured around the chip or the heat sink. The protective material is typically a ring of foam. But set up the protection bubble cotton and can occupy great volume to the metal liquid in the bubble cotton also can flow into the bubble cotton inside, causes the radiating surface can not even contact with the metal liquid, can reduce the infiltration effect to the radiating surface of radiating during operation, reduces radiating efficiency.
Based on the above, the present application provides a method for manufacturing a heat dissipating device, so as to solve the problem that the heat conducting layer flows at room temperature and cannot uniformly contact with the heat dissipating element.
The method for manufacturing the heat dissipating device according to the present application will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the method for manufacturing a heat dissipating device provided by the example of the present application includes:
S1, coating step
And heating the heat dissipation element to 90-120 ℃, covering the rotating heat dissipation element with liquid metal, and rotating the heat dissipation element to enable the liquid metal to flow so as to spin-coat the surface of the heat dissipation element. Wherein the liquid metal comprises, by mass, 10-15% gallium, 50-75% indium, 8-40% bismuth and 5-28% tin.
Liquid metal with the components of 10-15wt% of gallium, 50-75wt% of indium, 8-40wt% of bismuth and 5-28wt% of tin is coated on the rotating heat dissipation element, and the liquid metal can flow under the action of centrifugal force and is uniformly coated on the surface of the heat dissipation element in a rotating mode.
The application does not limit the specific content of gallium, and related personnel can correspondingly adjust the content according to the needs.
Illustratively, the content of gallium in the composition of the liquid metal may be in a range between one or any two of 10wt%, 11wt%, 12wt%, 13wt%, 14wt%, or 15 wt%.
The application does not limit the specific content of indium, and related personnel can correspondingly adjust the content according to the needs.
Illustratively, the content of indium in the composition of the liquid metal may be in a range between one or any two of 50wt%, 55wt%, 60wt%, 65wt%, 70wt%, or 15 wt%.
The application does not limit the specific content of bismuth, and related personnel can correspondingly adjust the bismuth according to the needs.
Illustratively, the content of bismuth in the composition of the liquid metal may range between one or any two of 8wt%, 10wt%, 15wt%, 20wt%, 25wt%, 30wt%, 35wt%, or 40 wt%.
The application does not limit the specific content of tin, and related personnel can correspondingly adjust the tin according to the needs.
Illustratively, the tin content of the liquid metal composition may range between one or any two of 5wt%, 6wt%, 10wt%, 15wt%, 20wt%, 25wt%, or 28 wt%.
In one possible embodiment, the composition of the liquid metal includes 5-10wt% gallium, 50-72wt% indium, 8-40wt% bismuth, and 10-28wt% tin.
Illustratively, the composition of the liquid metal includes 5wt% gallium, 72wt% indium, 13wt% bismuth, and 10wt% tin.
Illustratively, the composition of the liquid metal includes 8wt% gallium, 50wt% indium, 32wt% bismuth, and 10wt% tin.
Illustratively, the composition of the liquid metal includes 9wt% gallium, 55wt% indium, 8wt% bismuth, and 28wt% tin.
Further, the present application is not limited to how the liquid metal is obtained, and in one possible embodiment, please continue to refer to fig. 1, the method for manufacturing the heat dissipating device includes:
S101, a preparation method of liquid metal comprises the following steps:
According to the composition ratio of the liquid metal, mixing gallium metal, indium metal, bismuth metal and tin metal, and vacuum smelting for 1-5h at 300-500 ℃.
Illustratively, the smelting temperature may be in a range between one or any two of 300 ℃, 350 ℃, 400 ℃, 450 ℃, or 500 ℃.
For example, the time of smelting may be in the range between one or any two of 1h, 2h, 3h, 4h, or 5 h.
In one possible embodiment, metallic gallium, metallic indium, metallic bismuth and metallic tin are placed in a vacuum intermediate frequency melting furnace, mixed well, and then vacuum melted at a temperature of 300-500 ℃ for 1-5 hours.
Further, after the stirring is completed, the molten metal obtained in the step S101 may be placed in a vacuum heating stirrer, and the temperature is kept at 90-120 ℃ and the stirring is performed at a speed of 300-500rad/min for 20-40min, so that the liquid metal is uniformly mixed.
For example, the stirring speed may be 300rad/min, 350rad/min, 400rad/min, 450rad/min, or 500rad/min.
Further, the method of covering the rotating heat dissipation element with the liquid metal is not limited in the present application, and please continue to refer to fig. 1, the method for manufacturing the heat dissipation device provided by the example of the present application includes:
s102, filling the liquid metal into a container with a liquid outlet, and controlling the temperature of the liquid metal in the container to be 90-120 ℃.
Illustratively, the temperature of the liquid metal within the vessel may be in a range between one or any two of 90 ℃, 95 ℃,100 ℃, 105 ℃, 110 ℃, 115 ℃, or 120 ℃.
Illustratively, the vessel may be a crucible.
Further, the method of covering the rotating heat dissipation element with the liquid metal is not limited in the present application, and please continue to refer to fig. 1, the method for manufacturing the heat dissipation device provided by the example of the present application includes:
S103, placing the heat dissipation element on a rotary table heated to 90-120 ℃, and covering the liquid metal in the container on the rotary heat dissipation element from the liquid outlet.
The heated rotary table can enable the heat radiating element to rotate in the coating process, enable liquid metal to flow and spin on the surface of the heat radiating element under the action of centrifugal force, keep the heat of the heat radiating element in the spin coating process, and reduce the solidification probability of the liquid metal before the spin coating is uniform.
Illustratively, the temperature of the rotary table may be in a range between one or any two of 90 ℃, 95 ℃, 100 ℃, 105 ℃, 110 ℃, 115 ℃, or 120 ℃.
Further, the application is not limited to specific coating parameters, and the relevant personnel can select the parameters according to the needs.
In one possible embodiment, the flow rate of the drain is 3-9mm/s, the distance between the drain and the heat sink is 1-5mm, and the rotational speed of the rotational stage is 300-400rad/min.
When in coating, the liquid metal in the container such as a crucible and the like flows out from the liquid outlet, so that the liquid metal can be accumulated in the center of the surface of the radiating element; if the flow rate is too slow, efficiency is affected, and the exposure time of the liquid metal in the high-temperature air is too long, an oxide film may be formed, and heat conduction efficiency is affected.
By way of example, the flow rate of the drain may be in the range of one or any of 3mm/s, 4mm/s, 5mm/s, 6mm/s, 7mm/s, 8mm/s, or 9 mm/s.
The distance between the liquid outlet and the radiating element is high, the poured liquid metal can be partially solidified and thickened in the covering process, and the subsequent fluidity on the surface of the rotating radiating element can be influenced, so that the spin coating uniformity is influenced.
Illustratively, the distance between the drain and the heat dissipating element may be in a range between one or any two of 1mm, 2mm, 3mm, 4mm, or 5 mm.
If the rotating speed of the rotating table is too high, the centrifugal force of the molten metal can be larger than the friction force and directly flies out of the surface of the heat dissipation element; if the rotating speed of the rotating table is too slow, the efficiency is affected, and the molten metal has higher cohesion, so that the uniformity of the molten metal on the surface of the heat dissipation element in the spin coating process is affected.
Illustratively, the rotational speed of the rotational stage may be in a range between one or any two of 300rad/min、310rad/min、320rad/min、330rad/min、340rad/min、350rad/min、360rad/min、370rad/min、380rad/min、390rad/min or 400 rad/min.
Further, the application is not limited to the specific type of heat dissipation element, and the related personnel can select the heat dissipation element according to the needs.
The heat dissipating element may be a heat sink, for example.
Illustratively, the heat dissipating element may be a vapor chamber.
With continued reference to fig. 1, the method for manufacturing a heat dissipating device provided by the example of the present application includes:
s2, a curing step
And cooling the heat dissipation element to room temperature, so that the liquid metal on the surface of the heat dissipation element is solidified to form a heat conduction layer. The thickness of the heat conducting layer is 5-20 mu m.
The liquid metal is spin-coated on the surface of the heat dissipation element in a liquid state, so that the liquid metal and the heat dissipation surface are fully soaked, and a coating with the thickness of 5-20 mu m is formed. Then, the coated heat dissipation element is cooled to room temperature, and the liquid metal with the components including 10-15wt% of gallium, 50-75wt% of indium, 8-40wt% of bismuth and 5-28wt% of tin is solidified to form a heat conduction layer.
After curing, a heat conducting layer of 5-20 μm is formed on the heat dissipation surface.
Illustratively, the thickness of the thermally conductive layer may be in a range between one or any two of 5 μm, 10 μm, 15 μm, or 20 μm.
And forming a heat conducting layer with the thickness of 5-20 mu m, wherein the heat conducting layer is heated to melt when the heat radiating element works to generate heat, so that the surface of the heat radiating element is infiltrated, basically no flow occurs, and basically no flow out of the surface of the heat radiating element occurs. When the heat dissipation element stops working, the temperature is reduced to room temperature, and then the alloy liquid of gallium indium bismuth tin can be re-solidified to form a heat conduction layer.
Further, the present application is not limited to how to cool the heat dissipating element to room temperature, so that the liquid metal on the surface of the heat dissipating element is solidified to form a heat conducting layer, and in one possible embodiment, the rotating table may be closed, so that the rotating table stops rotating and heating is stopped.
Further, an example of the present application provides a heat sink having a heat radiating surface for exchanging heat with a heat source, the heat radiating surface being provided with a heat conductive layer. The preparation method of the heat conduction layer comprises the following steps: the liquid metal provided by the example of the application is covered on the radiating surface of the rotating radiator, and the liquid metal flows on the radiating surface due to centrifugal force in the rotating process and is uniformly spin-coated on the radiating surface.
Further, the present application provides a soaking plate, the soaking plate includes a soaking plate body and a heat conducting layer located on the surface of the soaking plate body, and the preparation method of the heat conducting layer includes: the liquid metal provided by the example of the application is covered on the surface of the rotating soaking plate body, and in the rotating process, the liquid metal flows on the surface of the soaking plate body due to centrifugal force, so that the liquid metal is uniformly spin-coated on the surface of the soaking plate body.
The method of manufacturing the heat sink device of the present application is described in further detail with reference to examples.
Example 1
Embodiment 1 provides a method for manufacturing a heat dissipating device, including the steps of:
(1) Pure indium particles, pure bismuth particles, pure tin particles and pure gallium particles are used as raw materials, and indium: bismuth: tin: the mass fraction ratio of gallium is 55.8wt% to 22wt% to 12.2wt% to 10wt%; and (3) putting the raw materials into a vacuum intermediate frequency smelting furnace, vacuumizing and heating to 400 ℃, keeping for 2 hours, and taking out.
(2) And (3) placing the metal solution after smelting in the step (1) in a vacuum heating stirrer, keeping the temperature at 100 ℃, and stirring at 400rad/min for 30min to uniformly mix the liquid metal.
(3) Pouring the liquid metal in the step (2) into a crucible, connecting the crucible with a liquid outlet, controlling the flow rate through a switch, and keeping the temperature of the liquid metal at 100 ℃. A rotary table is arranged below the crucible, and a silicon wafer to be coated is arranged on the rotary table. The center of the silicon wafer is aligned with the center of the rotary table, so that the molten metal flowing down from the liquid outlet is centrifugally moved due to inertia and uniformly covered on the wafer. Wherein the flow speed of the liquid outlet is 5mm/s, the distance between the pipe orifice and the surface of the sample is 5cm, and the rotating speed of the rotating disc is 350rad/min. The specific composition and injection parameters are shown in table 1.
Fig. 2 is a physical comparison of the coating before and after coating, the silver gray in the left half of fig. 2 is the thermally conductive layer, and the dark black in the right half is the uncoated substrate. As can be seen from the left half of fig. 2, by using the preparation method provided by the example of the present application, a heat conducting layer with a uniform coating can be obtained.
Example 2
Embodiment 2 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
in step (1), indium: bismuth: tin: the mass fraction of gallium is 72wt% to 13wt% to 10wt% to 5wt%. The specific composition and injection parameters are shown in table 1.
Example 3
Embodiment 3 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In step (1), indium: bismuth: tin: the mass fraction of gallium is 50wt% to 32wt% to 10wt% to 8wt%. The specific composition and injection parameters are shown in table 1.
Example 4
Embodiment 4 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In step (1), indium: bismuth: tin: the mass fraction of gallium is 55wt% to 8wt% to 28wt% to 9wt%. The specific composition and injection parameters are shown in table 1.
Example 5
Embodiment 5 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In the step (3), the flow rate of the liquid outlet is 4mm/s. The specific composition and injection parameters are shown in table 1.
Example 6
Embodiment 6 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
in the step (3), the flow rate of the liquid outlet is 7mm/s. The specific composition and injection parameters are shown in table 1.
Example 7
Embodiment 7 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In the step (3), the rotating speed of the spin coater is 2mm/s. The specific composition and injection parameters are shown in table 1.
Example 8
Embodiment 8 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
in the step (3), the rotating speed of the spin coater is 10mm/s. The specific composition and injection parameters are shown in table 1.
Example 9
Embodiment 9 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In the step (3), the rotational speed of the spin coater is 300rad/min. The specific composition and injection parameters are shown in table 1.
Example 10
Embodiment 10 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In the step (3), the rotating speed of the spin coater is 400rad/min. The specific composition and injection parameters are shown in table 1.
Example 11
Embodiment 11 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In the step (3), the rotating speed of the spin coater is 200rad/min. The specific composition and injection parameters are shown in table 1.
Example 12
Embodiment 12 provides a method for manufacturing a heat dissipating device, which is different from embodiment 1 in that:
In the step (3), the rotational speed of the spin coater is 500rad/min. The specific composition and injection parameters are shown in table 1.
Comparative example 1
Comparative example 1 differs from example 1 in that:
In step (1), indium: bismuth: tin: the mass fraction of gallium is 20wt% 47wt% 30wt% 3wt%.
In the step (3), the liquid metal in the step (2) is poured into a crucible, the crucible is connected with a liquid outlet, the flow rate is controlled through a switch, and the temperature of the liquid metal is kept to be 100 ℃. The silicon wafer to be coated is placed below the crucible, foam is arranged around the wafer, the wafer to be coated is in a non-rotating fixed state, and the molten metal flowing down from the liquid outlet is dripped into an area surrounded by the foam on the wafer. The flow rate of the liquid outlet is 5mm/s, and the pipe orifice is 5cm away from the surface of the sample. The specific composition and coating parameters are shown in table 1.
Comparative example 2
Comparative example 2 differs from example 1 in that:
In step (1), indium: bismuth: tin: the mass fraction of gallium is 25wt% to 20wt% to 44wt% to 11wt%. The specific composition and coating parameters are shown in table 1.
Comparative example 3
Comparative example 3 differs from example 1 in that:
in step (1), indium: tin: the mass fraction of gallium is 20wt% to 10wt% to 70wt%. The specific composition and coating parameters are shown in table 1.
Comparative example 4
Comparative example 4 differs from example 1 in that: in the step (3), the liquid metal in the step (2) is poured into a crucible, the crucible is connected with a liquid outlet, the flow rate is controlled through a switch, and the temperature of the liquid metal is kept to be 100 ℃. The silicon wafer to be coated is placed below the crucible, foam is arranged around the wafer, the wafer to be coated is in a non-rotating fixed state, and the molten metal flowing down from the liquid outlet is dripped into an area surrounded by the foam on the wafer. The flow rate of the liquid outlet is 5mm/s, and the pipe orifice is 5cm away from the surface of the sample. The specific composition and coating parameters are shown in table 1.
TABLE 1
Test case
The heat dissipation devices provided in examples 1-12 of the present application and comparative examples 1-2 were examined for thermal conductivity, thermal resistance and tensile strength.
The detection method of the heat conductivity coefficient comprises the following steps: steady state heat flow method, test instrument: taiwan rui leadership thermal coefficient tester, model: LW-9389.
The method for detecting the thermal resistance comprises the following steps: steady state heat flow method, test instrument: thermal conductivity tester, model: LW-9389.
The method for detecting the tensile strength comprises the following steps: tensile strength test, test instrument: tensile testing machine, model: KJ-1065.
The test results are shown in Table 2.
TABLE 2
Analysis of results:
in combination with examples 1 to 12 and comparative forces 1 to 4, it can be seen that the heat dissipating device provided by the examples of the present application has a thermal conductivity of not less than 8.54W/mK, a thermal resistance of not more than 0.13cm 2 K/W, and a tensile strength of not less than 6.8N/mm 2, which is superior to comparative examples 1 to 4.
As can be seen from the combination of the embodiments 5-8, when the flow rate of the spray head is 3-9mm/s, the heat conductivity and the tensile strength of the heat dissipation device are higher, and the thermal resistance is lower.
As can be seen from the combination of examples 9 to 12, when the rotation speed of the rotary table is 300 to 400rad/min, the heat conductivity and tensile strength of the heat dissipating device are high, and the thermal resistance is low.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A method of manufacturing a heat sink device, comprising:
Coating: heating the heat dissipation element to 90-120 ℃, and covering liquid metal on the rotating heat dissipation element, wherein the heat dissipation element rotates to enable the liquid metal to flow so as to be spin-coated on the surface of the heat dissipation element;
And (3) curing: cooling the heat dissipation element to room temperature, and solidifying the liquid metal on the surface of the heat dissipation element to form a heat conduction layer; the thickness of the heat conduction layer is 5-20 mu m;
Wherein the components of the liquid metal comprise 10-15wt% of gallium, 50-75wt% of indium, 8-40wt% of bismuth and 5-28wt% of tin in terms of mass fraction.
2. The method of manufacturing a heat sink according to claim 1, wherein the method of manufacturing a liquid metal comprises:
mixing gallium metal, indium metal, bismuth metal and tin metal according to the composition ratio of the liquid metal, and vacuum smelting for 1-5h at 300-500 ℃.
3. The method of manufacturing a heat sink according to claim 2, wherein after the melting is completed, the temperature of the liquid metal is adjusted to 90-120 ℃ and stirred at a speed of 300-500rad/min for 20-40min.
4. A method of manufacturing a heat sink device according to claim 3, wherein the method of coating the liquid metal on the rotating heat sink member comprises:
And filling the liquid metal into a container with a liquid outlet, controlling the temperature of the liquid metal in the container to be 90-120 ℃, and covering the liquid metal in the container on the rotating heat radiating element from the liquid outlet.
5. The method of manufacturing a heat sink device according to claim 4, wherein the method of covering the liquid metal on the rotating heat sink member further comprises:
and placing the heat dissipation element on a rotary table heated to 90-120 ℃, and covering the liquid metal in the container on the rotating heat dissipation element from the liquid outlet.
6. The method of manufacturing a heat sink according to claim 5, wherein the flow rate of the liquid discharge port is 3-9mm/s, the distance between the liquid discharge port and the heat sink is 1-5mm, and the rotational speed of the turntable is 300-400rad/min.
7. The method of manufacturing a heat dissipating device of claim 6 wherein in the solidifying step, the method of cooling the heat dissipating element to room temperature and solidifying the liquid metal on the surface of the heat dissipating element to form a heat conductive layer comprises:
And closing the rotary table, stopping the rotary table from rotating and stopping heating.
8. The method of manufacturing a heat sink according to claim 1, wherein the liquid metal comprises 5-10wt% gallium, 50-72wt% indium, 8-40wt% bismuth, and 10-28wt% tin.
9. The method of manufacturing a heat sink according to any one of claims 1 to 8, wherein the heat radiating member is a heat radiator having a heat radiating surface that exchanges heat with a heat source, and the liquid metal is coated on the heat radiating surface of the heat radiator that rotates.
10. The method of manufacturing a heat sink according to any one of claims 1 to 8, wherein the heat dissipating element is a vapor chamber, and the liquid metal is coated on the vapor chamber that rotates.
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