CN1173036A - Structure of Cathode Constituent and Method of Coating Electron Emitter - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000000576 coating method Methods 0.000 title claims description 20
- 239000011248 coating agent Substances 0.000 title claims description 16
- 239000000470 constituent Substances 0.000 title description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 28
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 8
- 230000003213 activating effect Effects 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 2
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 1
- 239000000292 calcium oxide Substances 0.000 claims 1
- 238000003475 lamination Methods 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract description 3
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
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Abstract
Description
本发明涉及阴极构成体的结构及电子发射体的涂布方法，特别涉及通过改变涂布在圆筒形阴极附属件上段的气体金属上表面上的电子发射体的结构，来提高阴极电流密度、延长电子发射寿命的阴极构成体。The present invention relates to the structure of the cathode structure and the coating method of the electron emitter, in particular to improving the cathode current density, A cathode constituent that prolongs the lifetime of electron emission.
常规的阴极射线管用的阴极结构，如图1所示，由在其内插设阴极加热用的灯丝的圆筒形阴极附属件(3)上段的含有微量活性化金属(例如Mg，Si)的镍(Ni)合金的气体金属(2)构成，在上述气体金属(2)的上表面上，由以氧化钡(BaO)为主要成份，并含有氧化锶(SrO)、氧化钙(CaO)的电子发射物质构成电子发射体(1)。The cathode structure that conventional cathode ray tube is used, as shown in Figure 1, by inserting the cylindrical cathode attachment (3) upper segment of the filament that cathode heating is used in it, the metal that contains trace activation metal (such as Mg, Si) The gas metal (2) of the nickel (Ni) alloy is composed of barium oxide (BaO) as the main component on the upper surface of the gas metal (2) and contains strontium oxide (SrO) and calcium oxide (CaO). The electron-emitting substance constitutes an electron emitter (1).
图中未说明的标号5表示高阻中间层。Reference numeral 5 not illustrated in the figure denotes a high-resistance intermediate layer.
在阴极射线管中的阴极，由于插设在阴极附属件(3)内部的阴极加热用的灯丝(4)的发热，起着从气体金属(2)上表面上所具有的电子发射体生成电子的作用。The cathode in the cathode ray tube generates electrons from the electron emitter on the upper surface of the gas metal (2) due to the heating of the cathode heating filament (4) inserted inside the cathode attachment (3) role.
而且，阴极电流密度就单位电子发射体表面面积的阴极电流而言，一般位于电子发射中心的电流密度则意味着电子束电流密度。Moreover, the cathode current density refers to the cathode current per unit surface area of the electron emitter, and the current density generally located at the electron emission center means the electron beam current density.
另外，电子发射寿命是指在正常工作条件下的阴极电流与初始阴极电流相比，劣化到其初始值的40～50％的时间。作为与电子发射寿命相关的主要因素，由于活性化金属的不足而使自由钡不足，随着电子发射物质的蒸发而使自由钡不足，在电子发射体(1)与气体金属(2)之间就有高阻的中间层(5)生成。In addition, the electron emission lifetime refers to the time during which the cathode current under normal operating conditions deteriorates to 40 to 50% of its initial value compared to the initial cathode current. As the main factor related to electron emission lifetime, free barium deficiency due to deficiency of activating metal, deficiency of free barium due to evaporation of electron emission material, between electron emitter (1) and gaseous metal (2) A high-resistance intermediate layer (5) is formed.
常规的阴极射线管用的阴极构成体的电子生成机理如下：
在常规的阴极射线管用的阴极构成体中，电子生成反应是在电子发射体(1)的电子发射物质与气体金属(2)中的活性化金属之间发生的，因此，在电子发射体(1)与气体金属(2)之间就会形成高阻的氧化物层的中间层(5)。上述中间层(5)，当电子从阴极生成放出时，由于高阻而产生热，损伤了电子发射体(1)，一方面不能使电子发射体(1)中的电子发射物质与气体金属(2))中的活性化金属层间发生接触反应，导致电子发射的急剧劣化，从而急剧地缩短了电子发射寿命。In a conventional cathode constituting body for a cathode ray tube, an electron generation reaction occurs between the electron emitting material of the electron emitter (1) and the active metal in the gas metal (2), and therefore, in the electron emitter ( Between 1) and the gas metal (2), an intermediate layer (5) of a high-resistance oxide layer will be formed. The above-mentioned intermediate layer (5), when electrons are generated and released from the cathode, generates heat due to high resistance, which damages the electron emitter (1). 2) A contact reaction occurs between the activated metal layers, resulting in a sharp deterioration of the electron emission, thereby drastically shortening the electron emission lifetime.
在气体金属(2)上表面上形成这种电子发射体(1)的方法是采取利用了洁净空气压的空气喷射涂布方法，涂布密度约0.8～1.1g/cm3。The method of forming the electron emitter (1) on the upper surface of the gas metal (2) is an air jet coating method using clean air pressure, and the coating density is about 0.8-1.1 g/cm 3 .
这意味着，通过蒸发电子发射物质来提高阴极电流密度和电子发射寿命是有限度的。This means that there is a limit to increasing the cathode current density and electron emission lifetime by evaporating electron emitting materials.
再有，常规的阴极射线管用的阴极构成体可工作的峰值阴极电流密度约2.5A/cm2，电子发射寿命约20,000小时。In addition, a conventional cathode ray tube cathode structure can operate at a peak cathode current density of about 2.5 A/cm 2 , and has an electron emission life of about 20,000 hours.
这种常规的阴极射线管虽然主要使用氧化物阴极，但由于最近的阴极射线管的大形化、高辉度化的趋势，需要更高的阴极电流密度，为了高的阴极电流密度，正在开发使用一种配合(dispenser)阴极。但配合阴极的制作工艺过程极为复杂，其价格与氧化物阴极相比约高20倍左右，存在着难以适用于阴极射线管的问题。Although such a conventional cathode ray tube mainly uses an oxide cathode, due to the recent trend of increasing the size and brightness of the cathode ray tube, a higher cathode current density is required. For a higher cathode current density, the development of A dispenser cathode is used. However, the manufacturing process of the matching cathode is extremely complicated, and its price is about 20 times higher than that of the oxide cathode, which has the problem that it is difficult to apply to the cathode ray tube.
本发明之目的在于，提高电子发射物质的涂布密度，超过常规的氧化物阴极的约2.5A/cm2的阴极电流密度阴度和约20,000小时的电子发射寿命限度，提高约2倍以上。The purpose of the present invention is to increase the coating density of electron emission materials, which exceeds the cathode current density cathode of about 2.5A/cm 2 and the electron emission life limit of about 20,000 hours of conventional oxide cathodes, and improves by about 2 times or more.
为达到上述目的，采用在气体金属上表面上，在形成电子发射体时，多次交替地涂布电子发射物质和活性化金属的方法，作成多段积层式以构成电子发射体。In order to achieve the above-mentioned purpose, the method of alternately coating the electron emission material and the active metal multiple times on the upper surface of the gas metal when forming the electron emitter is made into a multi-stage laminate to form the electron emitter.
图1是常规的阴极射线管用的阴极构成体的结构图。FIG. 1 is a structural diagram of a cathode structure for a conventional cathode ray tube.
图2是本发明的阴极射线管用的阴极构成体的结构图。Fig. 2 is a structural diagram of a cathode structure for a cathode ray tube of the present invention.
图2是表示本发明的阴极构成体的结构图，在其内插设有阴极加 热用的灯丝(104)的圆筒形阴极附属件(103)上段，设置为提供电子发射体(107)的气体金属(102)，在上述气体金属(102)上表面上设置多段涂布活性化金属(105)和电子放射物质的电子发射体(107)。Fig. 2 is a structural view showing the cathode structure of the present invention, in which a cathode plus The upper section of the cylindrical cathode appendage (103) of the filament (104) for heat is arranged to provide the gas metal (102) of the electron emitter (107), and the multi-stage coating activity is arranged on the upper surface of the gas metal (102) An electron emitter (107) of a metal oxide (105) and an electron-emitting substance.
而且，上述电子发射物质(106)是以氧化钡(BaO)为主要成份并至少含有氧化锶(SrO)、氧化钙(CaO)、氧化钪(Sc2O3)及氧化铝(Al2O3)中之一种的复合氧化物，活性化金属(105)，例如，至少包含镁(Mg)、硅(Si)、锆(Zr)、锰(Mn)、钨(W)及钍(Th)中之一种作为与氧化钡起反应生成自由钡的金属。Moreover, the electron emission material (106) is mainly composed of barium oxide (BaO) and contains at least strontium oxide (SrO), calcium oxide (CaO), scandium oxide (Sc 2 O 3 ) and aluminum oxide (Al 2 O 3 ), the active metal (105), for example, contains at least magnesium (Mg), silicon (Si), zirconium (Zr), manganese (Mn), tungsten (W) and thorium (Th) One of them acts as a metal that reacts with barium oxide to form free barium.
这种在气体金属(102)上表面上涂布电子发射体(107)的方法，以多次交替涂布电子发射物质(106)与活性化金属(105)的方法最为有效的，而采用将电子发射物质(106)与活性化金属(105)混合后涂布、喷射等方法，都不能均匀分布。This method of coating the electron emitter (107) on the upper surface of the gaseous metal (102) is the most effective method of alternately coating the electron emission material (106) and the active metal (105) multiple times, and the method of using the The electron emission material (106) is mixed with the active metal (105) and coated, sprayed and other methods cannot be evenly distributed.
另外，在涂布电子发射体(107)时，首先在气体金属(102)的上表面上，涂布电子发射物质(106)，在电子发射物质(106)表面上再设置活性化金属(105)，则使活性化金属不脱离，可以有效地构成电子发射体(107)。In addition, when coating the electron emitter (107), firstly, on the upper surface of the gaseous metal (102), the electron emission material (106) is coated, and then the active metal (105) is set on the surface of the electron emission material (106). ), the active metal is not detached, and the electron emitter (107) can be effectively formed.
涂布电子发射物质(106)的方法，虽然可以使用常规的喷射方法，但为了提高电子发射体(107)的涂布密度，施加一定压力的プリト方法是有效的，当一次涂布厚在20μm以下时，可使活性化金属(105)与电子发射物质(106)间的反应成为可能。这时，以微细粉末涂布活性化金属的方法，若利用采取干燥空气喷射方式的喷射方法，能使活性化金属分布均匀，提高效果。The method of coating the electron emission material (106), although the conventional spraying method can be used, in order to increase the coating density of the electron emission material (107), the prito method of applying a certain pressure is effective, when the thickness of one coating is 20 μm In the following cases, the reaction between the activating metal (105) and the electron-emitting material (106) can be made possible. At this time, the method of coating the activated metal with fine powder can make the distribution of the activated metal uniform and improve the effect by using the dry air spraying method.
在本发明的阴极射线管用的阴极构成体中，在含有镁和硅的镍合金的气体金属(102)上表面上设置由以氧化钡、氧化铝为主要成分的电子发射物质(106)和钨粉末的活性化金属(105)构成的电子发射体(107)，电子生成机理如下：In the cathode structure for a cathode ray tube of the present invention, the electron emission material (106) mainly composed of barium oxide and aluminum oxide and tungsten are provided on the upper surface of the gas metal (102) of a nickel alloy containing magnesium and silicon. The electron emitter (107) that the activated metal (105) of the powder is made of, the mechanism of electron generation is as follows:
①电子发射物质(106)和气体金属(105)之间的电子生成机理：
②电子发射体(107)内的电子发射物质(106)与活性化金属(105)间的电子生成机理：② Electron generation mechanism between the electron emission material (106) and the active metal (105) in the electron emitter (107):
本发明的阴极射线管用的阴极构成体与常规的阴极构成体相比生成有大量的自由钡，但电子发射体(107)内的电子发射物质(106)同活性化金属(105)间的反应生成物与上述电子发射物质(106)同气体金属(102)间的反应生成物的中间层不同，而生成在表面宽大的活性化金属(105)粉末表面上。这就构不成电子发射变热的主要原因，相对来讲，象常规那样的电子发射物质与气体金属间的中间层生成得也薄些，构不成电子发射劣化的主要原因，所以可以抑制常规的电子发射物质与气体金属间的中间层的电子发射变热，可以抑制电子发射劣化，可以延长电子发射寿命。The cathode structure for the cathode ray tube of the present invention has a large amount of free barium compared with the conventional cathode structure, but the reaction between the electron emission material (106) in the electron emitter (107) and the active metal (105) The product is different from the intermediate layer of the reaction product between the electron emission material (106) and the gaseous metal (102), and is generated on the surface of the activated metal (105) powder having a wide surface. This does not constitute the main cause of electron emission heating. Relatively speaking, the intermediate layer between the conventional electron emission material and the gas metal is also thinner, which does not constitute the main cause of electron emission deterioration. Therefore, the conventional The electron emission heat of the intermediate layer between the electron emission material and the gas metal can suppress the deterioration of the electron emission and prolong the life of the electron emission.
再有，本发明的电子发射体涂布方法是利用给电子发射物质(106)施加压力的プリト方法涂布的，活性化金属(105)是利用空气喷射方式涂布的，因而可以得到均匀的活性化金属(105)的电子发射体(107)。而且，电子发射物质(106)的涂布密度提高至1.2g/cm2以上，可以抑制阴极工作时电子发射物质(106)的蒸发，因而可以提高阴极电流密度，延长发射寿命。Furthermore, the electron emitter coating method of the present invention is applied by the Prito method of applying pressure to the electron emission material (106), and the activated metal (105) is applied by air spraying, so that a uniform coating can be obtained. The electron emitter (107) of the activated metal (105). Moreover, the coating density of the electron emission material (106) is increased to more than 1.2g/ cm2 , which can suppress the evaporation of the electron emission material (106) when the cathode is working, thereby increasing the cathode current density and prolonging the emission life.
以上，如所说明的，若依本发明，可以得到均匀的活性化金属的电子发射体，将电子发射物质的涂布密度提高至1.2g/cm2以上，可以报制阴极工作时的电子发射物质的蒸发，增大阴极电流密度并延长电子发射寿命。Above, as explained, according to the present invention, uniform electron emitters of activated metals can be obtained, and the coating density of the electron emission materials can be increased to more than 1.2 g/cm 2 , and the electron emission when the cathode is working can be reported. Evaporation of substances increases cathode current density and prolongs electron emission lifetime.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019950052917A KR100195955B1 (en) | 1995-12-20 | 1995-12-20 | Structure of Cathode Structure and Electrospinning Method |
| KR52917/95 | 1995-12-20 |
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| CN1173036A true CN1173036A (en) | 1998-02-11 |
| CN1089478C CN1089478C (en) | 2002-08-21 |
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| JP (1) | JPH09180622A (en) |
| KR (1) | KR100195955B1 (en) |
| CN (1) | CN1089478C (en) |
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Cited By (2)
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| CN105788996A (en) * | 2014-12-22 | 2016-07-20 | 中国电子科技集团公司第十二研究所 | Sub-micron film scandium-tungsten cathode and preparation method thereof |
| CN111739771A (en) * | 2020-06-30 | 2020-10-02 | 西安稀有金属材料研究院有限公司 | Scandium-containing strontium active material for heat cathode material |
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| KR20000010147A (en) * | 1998-07-30 | 2000-02-15 | 구자홍 | Cathode for cathode ray tube |
| US6290564B1 (en) * | 1999-09-30 | 2001-09-18 | Motorola, Inc. | Method for fabricating an electron-emissive film |
| JP3658346B2 (en) | 2000-09-01 | 2005-06-08 | キヤノン株式会社 | Electron emitting device, electron source and image forming apparatus, and method for manufacturing electron emitting device |
| JP3639808B2 (en) | 2000-09-01 | 2005-04-20 | キヤノン株式会社 | Electron emitting device, electron source, image forming apparatus, and method of manufacturing electron emitting device |
| JP3634781B2 (en) | 2000-09-22 | 2005-03-30 | キヤノン株式会社 | Electron emission device, electron source, image forming device, and television broadcast display device |
| FR2821205A1 (en) * | 2001-02-19 | 2002-08-23 | Thomson Tubes & Displays | Electron gun incorporating a cathode made from a mixture containing barium and a co-evaporative material to reduce parasitic emissions |
| JP3768908B2 (en) | 2001-03-27 | 2006-04-19 | キヤノン株式会社 | Electron emitting device, electron source, image forming apparatus |
| JP3703415B2 (en) | 2001-09-07 | 2005-10-05 | キヤノン株式会社 | ELECTRON EMITTING ELEMENT, ELECTRON SOURCE, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING ELECTRON EMITTING ELEMENT AND ELECTRON SOURCE |
| JP3605105B2 (en) * | 2001-09-10 | 2004-12-22 | キヤノン株式会社 | Electron emitting element, electron source, light emitting device, image forming apparatus, and method of manufacturing each substrate |
| KR100490170B1 (en) * | 2003-07-10 | 2005-05-16 | 엘지.필립스 디스플레이 주식회사 | Cathode of CRT |
| KR20190001149U (en) | 2017-11-07 | 2019-05-15 | 김성열 | Wig |
| KR20190082380A (en) | 2017-12-30 | 2019-07-10 | 이성민 | Wig |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3113236A (en) * | 1959-06-23 | 1963-12-03 | Philips Corp | Oxide dispenser type cathode |
| NL113461C (en) * | 1961-03-08 | |||
| JP2758244B2 (en) * | 1990-03-07 | 1998-05-28 | 三菱電機株式会社 | Cathode for electron tube |
| JP2897938B2 (en) * | 1991-01-25 | 1999-05-31 | 三菱電機株式会社 | Cathode for electron tube |
| DE4207220A1 (en) * | 1992-03-07 | 1993-09-09 | Philips Patentverwaltung | SOLID ELEMENT FOR A THERMIONIC CATHODE |
-
1995
- 1995-12-20 KR KR1019950052917A patent/KR100195955B1/en not_active IP Right Cessation
-
1996
- 1996-12-10 CN CN96120538A patent/CN1089478C/en not_active Expired - Fee Related
- 1996-12-17 JP JP35334596A patent/JPH09180622A/en active Pending
- 1996-12-19 MY MYPI96005375A patent/MY117904A/en unknown
- 1996-12-19 GB GB9626424A patent/GB2308495B/en not_active Expired - Fee Related
- 1996-12-20 BR BR9606144A patent/BR9606144A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105788996A (en) * | 2014-12-22 | 2016-07-20 | 中国电子科技集团公司第十二研究所 | Sub-micron film scandium-tungsten cathode and preparation method thereof |
| CN105788996B (en) * | 2014-12-22 | 2018-02-06 | 中国电子科技集团公司第十二研究所 | A kind of submicron film scandium tungsten cathode and preparation method thereof |
| CN111739771A (en) * | 2020-06-30 | 2020-10-02 | 西安稀有金属材料研究院有限公司 | Scandium-containing strontium active material for heat cathode material |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2308495B (en) | 2000-08-30 |
| KR100195955B1 (en) | 1999-06-15 |
| BR9606144A (en) | 1998-11-03 |
| MY117904A (en) | 2004-08-30 |
| GB9626424D0 (en) | 1997-02-05 |
| KR970051633A (en) | 1997-07-29 |
| CN1089478C (en) | 2002-08-21 |
| JPH09180622A (en) | 1997-07-11 |
| GB2308495A (en) | 1997-06-25 |
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