CN1089478C - Cathode Structure body and method of coating electronics radiative body - Google Patents
Cathode Structure body and method of coating electronics radiative body Download PDFInfo
- Publication number
- CN1089478C CN1089478C CN96120538A CN96120538A CN1089478C CN 1089478 C CN1089478 C CN 1089478C CN 96120538 A CN96120538 A CN 96120538A CN 96120538 A CN96120538 A CN 96120538A CN 1089478 C CN1089478 C CN 1089478C
- Authority
- CN
- China
- Prior art keywords
- electron
- cathode
- metal layer
- layer
- electron emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000000576 coating method Methods 0.000 title abstract description 18
- 239000011248 coating agent Substances 0.000 title abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 2
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 1
- 239000000292 calcium oxide Substances 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 65
- 229910052788 barium Inorganic materials 0.000 description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
Landscapes
- Solid Thermionic Cathode (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
本发明之目的在于,将电子发射物质的涂布密度提高约2倍以上。为达此目的,采用在气体金属上表面上,在形成电子发射体时,多次交替地涂布电子发射物质和活性化金属的方法,作成多段积层式以构成电子发射体。在其内插设有阴极加热用的灯丝(104)的圆筒形阴极附属件(103)上段,设置为提供电子发射体(107)的气体金属(102),在上述气体金属(102)上表面上设置多段涂布活性化金属(105)和电子放射物质的电子发射体(107)。
The object of the present invention is to increase the coating density of the electron emission material by about 2 times or more. To achieve this purpose, a method of alternately coating electron-emitting materials and active metals on the upper surface of the gas metal when forming electron emitters is used to form a multi-stage laminate to form an electron emitter. The upper section of the cylindrical cathode attachment (103) with the filament (104) for cathode heating inserted therein is set as the gas metal (102) providing the electron emitter (107), on the gas metal (102) Electron emitters (107) coated with active metals (105) and electron emitting substances in multiple stages are arranged on the surface.
Description
本发明涉及阴极构件及其制造方法,特别涉及通过改变涂覆在圆筒形阴极附属件上端的金属层上表面之上的电子发射体的结构,来提高阴极电流密度、延长电子发射寿命的阴极构件。The present invention relates to a cathode component and a manufacturing method thereof, in particular to a cathode which improves the current density of the cathode and prolongs the lifetime of electron emission by changing the structure of the electron emitter coated on the upper surface of the metal layer on the upper end of the cylindrical cathode accessory member.
常规的阴极射线管用的阴极结构,如图1所示,包括在其内部设有阴极加热用的灯丝4的圆筒形阴极附属件3,在其上部形成含有微量活性化金属(例如Mg,Si)的镍(Ni)合金的金属层2,以及在上述金属层2的上表面上,由以氧化钡(BaO)为主要成份,并含有氧化锶(SrO)、氧化钙(CaO)的电子发射物质构成电子发射体1。The cathode structure that conventional cathode ray tube is used, as shown in Figure 1, comprises the cylindrical
图中未说明的标号5表示高阻中间层。
在阴极射线管中的阴极,由于插设在阴极附属件3内部的阴极加热用的灯丝4的发热作用,使金属层2上表面上的电子发射体生成电子。In the cathode in the cathode ray tube, the electron emitter on the upper surface of the
而且,阴极电流密度就单位电子发射体表面面积的阴极电流而言,一般位于电子发射中心的电流密度则意味着电子束电流密度。Moreover, the cathode current density refers to the cathode current per unit surface area of the electron emitter, and the current density generally located at the electron emission center means the electron beam current density.
另外,电子发射寿命是指在正常工作条件下的阴极电流与初始阴极电流相比,劣化到其初始值的40~50%的时间。作为与电子发射寿命相关的主要因素,由于活性化金属的不足而使自由钡不足,随着电子发射物质的蒸发而使自由钡不足,在电子发射体1与金属层2之间就有高阻的中间层5生成。In addition, the electron emission lifetime refers to the time during which the cathode current under normal operating conditions deteriorates to 40 to 50% of its initial value compared to the initial cathode current. As a main factor related to electron emission lifetime, free barium is insufficient due to insufficient activation metal, and free barium is insufficient due to evaporation of electron emission material, and there is high resistance between electron emitter 1 and
常规的阴极射线管用的阴极构件的电子生成机理如下:
在常规的阴极射线管用的阴极构件中,电子生成反应是在电子发射体1的电子发射物质与金属层2中的活性化金属之间发生的,因此,在电子发射体1与金属层2之间就会形成高阻的氧化物层的中间层5。当电子从阴极生成放出时,由于高阻中间层的存在会产生大量的热,从而损伤了电子发射体1。另一方面,其阻断了电子发射体1中的电子发射物质与金属层2中的活性化金属间发生接触反应,导致电子发射性能的急剧劣化,从而急剧地缩短了电子发射寿命。In a conventional cathode member for a cathode ray tube, an electron generation reaction occurs between the electron emission material of the electron emitter 1 and the active metal in the
在金属层2上表面上形成这种电子发射体1的方法是采取利用了洁净空气压的空气喷射涂覆方法,涂覆密度约0.8~1.1g/cm3。The method of forming this electron emitter 1 on the upper surface of the
这意味着,通过蒸发电子发射物质来提高阴极电流密度和电子发射寿命是有限度的。This means that there is a limit to increasing the cathode current density and electron emission lifetime by evaporating electron emitting materials.
再有,常规的阴极射线管用的阴极构件可工作的峰值阴极电流密度约2.5A/cm2,电子发射寿命约20,000小时。Furthermore, the cathode member for a conventional cathode ray tube can operate at a peak cathode current density of about 2.5 A/cm 2 , and has an electron emission life of about 20,000 hours.
这种常规的阴极射线管虽然主要使用氧化物阴极,但由于最近的阴极射线管的大型化、高辉度化的趋势,需要更高的阴极电流密度,为了提高阴极电流密度,正在开发使用一种配合(dispenser)阴极。但配合阴极的制作工艺过程极为复杂,其价格与氧化物阴极相比高约20倍左右,难以应用于阴极射线管。Although such a conventional cathode ray tube mainly uses an oxide cathode, due to the recent trend of increasing the size and brightness of cathode ray tubes, a higher cathode current density is required. In order to increase the cathode current density, a A dispenser cathode. However, the manufacturing process of the matching cathode is extremely complicated, and its price is about 20 times higher than that of the oxide cathode, which is difficult to apply to the cathode ray tube.
本发明之目的在于,提高电子发射物质的涂覆密度,使常规的氧化物阴极的约2.5A/cm2的阴极电流密度和约20,000小时的电子发射寿命限度提高约2倍以上。The purpose of the present invention is to increase the coating density of electron emission materials, so that the cathode current density of about 2.5 A/cm 2 and the electron emission life limit of about 20,000 hours of conventional oxide cathodes are increased by more than about 2 times.
为实现上述目的,本发明提供了一种阴极构件,包括一个阴极附属件103和设置在所述阴极附属件内用于加热的灯丝104,一金属层102涂覆在所述阴极附属件103的外表面,以及一电子发射体107形成在金属层上表面之上,其特征在于所述电子发射体107由多层构成,该多层由电子发射物质层106和活性化金属层105交替层叠而成。To achieve the above object, the present invention provides a cathode component, including a
本发明还提供了用于制造上述阴极构件的制造方法,所述阴极构件包括一个阴极附属件103和设置在所述阴极附属件内用于加热的灯丝104,一金属层102涂覆在所述阴极附属件103的外表面,一电子发射体107形成在金属层107上表面之上,其特征在于在金属层102上表面之上交替地涂覆电子发射物质层106和活性化金属层105以形成所述的电子发射体。The present invention also provides a manufacturing method for manufacturing the above-mentioned cathode component, the cathode component includes a
图1是常规的阴极射线管用的阴极构件的结构图。FIG. 1 is a structural diagram of a cathode member for a conventional cathode ray tube.
图2是本发明的阴极射线管用的阴极构件的结构图。Fig. 2 is a structural diagram of a cathode member for a cathode ray tube of the present invention.
图2是表示本发明的阴极构件的结构图,在其内插设有阴极加热用的灯丝104的圆筒形阴极附属件103的上端,设置有金属层102,在上述金属层102上表面上设置由活性化金属层105和电子放射物质层106层叠形成的电子发射体107。Fig. 2 is the structural diagram showing the cathode member of the present invention, in which the upper end of the
而且,上述电子发射物质层106是以氧化钡(BaO)为主要成份并至少含有氧化锶(SrO)、氧化钙(CaO)、氧化钪(Sc2O3)及氧化铝(Al2O3)中之一种的复合氧化物,活性化金属层105,例如,至少包含镁(Mg)、锆(Zr)、锰(Mn)、钨(W)及钍(Th)中之一种作为与氧化钡起反应生成自由钡的金属。Furthermore, the electron
这种在金属层102上表面上涂覆电子发射体107的方法,以多次交替涂覆电子发射物质层106与活性化金属层105的方法最为有效,而采用将电子发射物质层106与活性化金属层105混合后涂覆、喷射等方法,都不能均匀分布。This method of coating the
另外,在涂覆电子发射体107时,首先在金属层102的上表面上,涂覆电子发射物质层106,在电子发射物质层106表面上再设置活性化金属层105,则使活性化金属层不脱离,可以有效地构成电子发射体107。In addition, when coating the
涂覆电子发射物质层106的方法,虽然可以使用常规的喷射方法,但为了提高电子发射体107的涂覆密度,施加一定压力的印制方法是有效的,当每一层涂覆厚度在20μm以下时,可使活性化金属层105与电子发射物质106间的反应成为可能。这时,以微细粉末涂覆活性化金属的方法,若利用采取干燥空气喷射方式的喷射方法,能使活性化金属分布均匀,提高效果。The method for coating the electron
在本发明的阴极射线管用的阴极构件中,在含有镁和硅的镍合金的金属层102上表面上设置由以氧化钡、氧化铝为主要成分的电子发射物质层106和含钨粉末的活性化金属层105构成的电子发射体107,电子生成机理如下:In the cathode member for cathode ray tube of the present invention, on the upper surface of the
①电子发射物质层106和金属层102之间的电子生成机理:
②电子发射体107内的电子发射物质层106与活性化金属层105间的电子生成机理:② Electron generation mechanism between the electron
本发明的阴极射线管用的阴极构件与常规的阴极构件相比生成有大量的自由钡,但电子发射体107内的电子发射物质层106同活性化金属层105间的反应生成物不同于上述电子发射物质层106同金属层102间的反应生成物的中间层,它生成在表面宽大的活性化金属层105表面上,这就防止了电子发射时的发热。相对来讲,象常规那样的电子发射物质与金属层间的中间层生成得也薄些,构不成电子发射劣化的主要原因,所以可以抑制常规的电子发射物质与金属层间的中间层的电子发射变热,抑制电子发射劣化,延长电子发射寿命。The cathode member for a cathode ray tube of the present invention generates a large amount of free barium compared with a conventional cathode member, but the reaction product between the electron
再有,本发明的电子发射体涂覆方法是利用给电子发射物质层106施加压力的印制方法涂覆的,活性化金属层105是利用空气喷射方式涂覆的,因而可以得到含均匀的活性化金属层105的电子发射体107。而且,电子发射物质层106的涂覆密度提高至1.2g/cm2以上,可以抑制阴极工作时电子发射物质层106的蒸发,因而可以提高阴极电流密度,延长发射寿命。In addition, the electron emitter coating method of the present invention is coated by a printing method that applies pressure to the electron
以上,如所说明的,若依本发明,可以得到均匀的活性化金属的电子发射体,将电子发射物质的涂覆密度提高至1.2g/cm2以上,可以抑制阴极工作时的电子发射物质的蒸发,增大阴极电流密度并延长电子发射寿命。Above, as explained, according to the present invention, uniform electron emitters of activated metals can be obtained, and the coating density of the electron emission materials can be increased to more than 1.2 g/cm 2 , which can suppress the electron emission materials during cathode operation. The evaporation of the cathode increases the cathode current density and prolongs the lifetime of electron emission.
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950052917A KR100195955B1 (en) | 1995-12-20 | 1995-12-20 | Structure of Cathode Structure and Electrospinning Method |
KR52917/95 | 1995-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1173036A CN1173036A (en) | 1998-02-11 |
CN1089478C true CN1089478C (en) | 2002-08-21 |
Family
ID=19442000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96120538A Expired - Fee Related CN1089478C (en) | 1995-12-20 | 1996-12-10 | Cathode Structure body and method of coating electronics radiative body |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH09180622A (en) |
KR (1) | KR100195955B1 (en) |
CN (1) | CN1089478C (en) |
BR (1) | BR9606144A (en) |
GB (1) | GB2308495B (en) |
MY (1) | MY117904A (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000010147A (en) * | 1998-07-30 | 2000-02-15 | 구자홍 | Cathode for cathode ray tube |
US6290564B1 (en) * | 1999-09-30 | 2001-09-18 | Motorola, Inc. | Method for fabricating an electron-emissive film |
JP3658346B2 (en) | 2000-09-01 | 2005-06-08 | キヤノン株式会社 | Electron emitting device, electron source and image forming apparatus, and method for manufacturing electron emitting device |
JP3639808B2 (en) | 2000-09-01 | 2005-04-20 | キヤノン株式会社 | Electron emitting device, electron source, image forming apparatus, and method of manufacturing electron emitting device |
JP3634781B2 (en) | 2000-09-22 | 2005-03-30 | キヤノン株式会社 | Electron emission device, electron source, image forming device, and television broadcast display device |
FR2821205A1 (en) * | 2001-02-19 | 2002-08-23 | Thomson Tubes & Displays | Electron gun incorporating a cathode made from a mixture containing barium and a co-evaporative material to reduce parasitic emissions |
JP3768908B2 (en) | 2001-03-27 | 2006-04-19 | キヤノン株式会社 | Electron emitting device, electron source, image forming apparatus |
JP3703415B2 (en) | 2001-09-07 | 2005-10-05 | キヤノン株式会社 | ELECTRON EMITTING ELEMENT, ELECTRON SOURCE, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING ELECTRON EMITTING ELEMENT AND ELECTRON SOURCE |
JP3605105B2 (en) * | 2001-09-10 | 2004-12-22 | キヤノン株式会社 | Electron emitting element, electron source, light emitting device, image forming apparatus, and method of manufacturing each substrate |
KR100490170B1 (en) * | 2003-07-10 | 2005-05-16 | 엘지.필립스 디스플레이 주식회사 | Cathode of CRT |
CN105788996B (en) * | 2014-12-22 | 2018-02-06 | 中国电子科技集团公司第十二研究所 | A kind of submicron film scandium tungsten cathode and preparation method thereof |
KR20190001149U (en) | 2017-11-07 | 2019-05-15 | 김성열 | Wig |
KR20190082380A (en) | 2017-12-30 | 2019-07-10 | 이성민 | Wig |
CN111739771A (en) * | 2020-06-30 | 2020-10-02 | 西安稀有金属材料研究院有限公司 | Scandium-containing strontium active material for heat cathode material |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04253137A (en) * | 1991-01-25 | 1992-09-08 | Mitsubishi Electric Corp | Cathode for electron tube |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3113236A (en) * | 1959-06-23 | 1963-12-03 | Philips Corp | Oxide dispenser type cathode |
NL113461C (en) * | 1961-03-08 | |||
JP2758244B2 (en) * | 1990-03-07 | 1998-05-28 | 三菱電機株式会社 | Cathode for electron tube |
DE4207220A1 (en) * | 1992-03-07 | 1993-09-09 | Philips Patentverwaltung | SOLID ELEMENT FOR A THERMIONIC CATHODE |
-
1995
- 1995-12-20 KR KR1019950052917A patent/KR100195955B1/en not_active IP Right Cessation
-
1996
- 1996-12-10 CN CN96120538A patent/CN1089478C/en not_active Expired - Fee Related
- 1996-12-17 JP JP35334596A patent/JPH09180622A/en active Pending
- 1996-12-19 MY MYPI96005375A patent/MY117904A/en unknown
- 1996-12-19 GB GB9626424A patent/GB2308495B/en not_active Expired - Fee Related
- 1996-12-20 BR BR9606144A patent/BR9606144A/en not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04253137A (en) * | 1991-01-25 | 1992-09-08 | Mitsubishi Electric Corp | Cathode for electron tube |
Also Published As
Publication number | Publication date |
---|---|
GB2308495B (en) | 2000-08-30 |
KR100195955B1 (en) | 1999-06-15 |
BR9606144A (en) | 1998-11-03 |
MY117904A (en) | 2004-08-30 |
GB9626424D0 (en) | 1997-02-05 |
KR970051633A (en) | 1997-07-29 |
JPH09180622A (en) | 1997-07-11 |
CN1173036A (en) | 1998-02-11 |
GB2308495A (en) | 1997-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1089478C (en) | Cathode Structure body and method of coating electronics radiative body | |
EP0905737B1 (en) | Electron-emitting source | |
US7887878B2 (en) | Method of manufacturing a fine-patternable, carbon nano-tube emitter with high reliabilty | |
CN1269177C (en) | Image display unit and production method therefor | |
US20020171357A1 (en) | Electron emitter including carbon nanotubes and its application in gas discharge devices | |
GB2370408A (en) | Carbon nanotube field emitter | |
EP1553613B1 (en) | Method of forming carbon nanotube emitter | |
US6741017B1 (en) | Electron source having first and second layers | |
US20060226763A1 (en) | Display device with electron emitters and method for making the same | |
CN1428813A (en) | Panel display and method for mfg. panel display cathode | |
US20060170329A1 (en) | Image display device | |
US6945838B2 (en) | Knocking processing method in flat-type display device, and knocking processing method in flat-panel display device-use substrate | |
CN1184323A (en) | Cathode for electron tube | |
JP2001229809A (en) | Electron emitter and image forming device | |
WO2005051045A1 (en) | Light-emitting device | |
US20070111628A1 (en) | Method for manufacturing electron-emitting device and method for manufacturing display having electron-emitting device | |
TWI291192B (en) | Image display device | |
KR100355218B1 (en) | Vacuum container for field emission cathode device | |
JPH02288045A (en) | Scandete cathode | |
JP2000208033A (en) | Nonevaporative getter, its manufacture, and image forming device | |
JP2008243727A (en) | Image display device, and method of manufacturing the same | |
CN1249773C (en) | Cathode for electron gun | |
CN1141729C (en) | Cathode used in electron gun | |
JP2761404B2 (en) | Fluorescent display tube | |
JP2004288547A (en) | Field emission type electron source, manufacturing method thereof and image display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: LG PHILIPS MONITORS KOREA CO., LTD. Free format text: FORMER OWNER: LG ELECTRONIC CO., LTD. Effective date: 20081031 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081031 Address after: Gyeongbuk, South Korea Patentee after: LG Philips Displays Korea Address before: Seoul City, Korea Patentee before: LG Electronics Inc. |
|
ASS | Succession or assignment of patent right |
Owner name: ME LE DI AN GUANG SHI (SOUTH KOREA) CO., LTD. Free format text: FORMER OWNER: LG PHILIPS MONITORS KOREA CO., LTD. Effective date: 20090828 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090828 Address after: Seoul, South Kerean Patentee after: Miller lighting (Korea) Co., Ltd. Address before: Gyeongbuk, South Korea Patentee before: LG Philips Displays Korea |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20020821 Termination date: 20101210 |