CN117199993B - Narrow linewidth semiconductor laser and manufacturing method thereof - Google Patents
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Abstract
The application provides a narrow linewidth semiconductor laser and a manufacturing method thereof, belongs to the technical field of semiconductor lasers, and is used for solving the problems of high price and poor mechanical stability of the narrow linewidth laser. The narrow linewidth semiconductor laser comprises a substrate, and a DFB gain region, a passive graded waveguide region and a resonance reflection region which are sequentially arranged on the substrate from right to left. The optical signal of the DFB gain region is injected into the resonance reflection region through the passive graded waveguide region, the resonance reflection region compresses the line width and then is injected into the DFB gain region, and after repeated circulation, the DFB can output a narrow line width signal.
Description
Technical Field
The application belongs to the technical field of semiconductor lasers, and particularly relates to a narrow linewidth semiconductor laser and a manufacturing method thereof.
Background
The narrow linewidth laser has wide application in the fields of coherent optical communication, gas detection, laser radar and the like, and along with the improvement of application technology, the linewidth of the narrow linewidth laser has higher and higher requirements. Conventional DFB lasers (distributed feedback lasers, distributed Feedback Laser) typically have line widths above 200kHz due to injection current noise, temperature noise, and heave noise during the electro-optic conversion process. To obtain linewidth index within 100kHz, it is often necessary to place a filter and mirror at one end of the laser, or an etalon, to provide feedback to the DFB laser using the relationship of the light wave frequency and reflectivity of the etalon. However, the addition of both the filter and the reflector and the addition of the etalon requires a stable spatial light path and expensive coupling equipment, so that the prepared narrow linewidth laser has higher price and poorer mechanical stability.
Disclosure of Invention
Therefore, the technical problem to be solved by the application is to provide the narrow linewidth semiconductor laser and the manufacturing method thereof, which can reduce the manufacturing difficulty and the manufacturing cost of the narrow linewidth semiconductor laser.
In order to solve the above problems, a first aspect of the present application provides a narrow linewidth semiconductor laser, which includes a substrate, and a DFB gain region, a passive graded waveguide region, and a resonant reflection region sequentially disposed on the substrate from right to left. The DFB gain region sequentially comprises a first contact electrode layer, a first P-type cladding layer, a waveguide, a quantum well layer and a first N-type cladding layer from top to bottom. A first N-type buried grating layer is arranged in the first N-type cladding layer. The passive graded waveguide region comprises a second contact electrode layer, a second P-type cladding layer, a first passive waveguide layer and a second N-type cladding layer from top to bottom in sequence. The resonance reflection area sequentially comprises a third contact electrode layer, a third P-type cladding layer, a second passive waveguide layer and a third N-type cladding layer from top to bottom. The second passive waveguide layer includes a second N-type buried grating layer therein. The optical signal of the DFB gain region is injected into the resonance reflection region through the passive graded waveguide region, the resonance reflection region compresses the line width and then is injected into the DFB gain region, and after multiple times of circulation, the DFB can output a narrow line width signal.
Optionally, the second N-type buried grating layer of the resonant reflection region includes at least three N-type buried vertical grating structures, a grating direction in each N-type buried vertical grating structure is perpendicular to the dissociation plane, and grating parameters of the at least three N-type buried vertical grating structures are identical.
Optionally, the material of the N-type buried vertical grating structure in the resonant reflection region is the same as the grating material in the first N-type buried grating layer in the DFB gain region; the direction of the N-type buried vertical grating structure in the resonant reflection region is perpendicular to the grating direction in the first N-type buried grating layer in the DFB gain region, and the periods are different.
Optionally, the grating width of the N-type buried vertical grating structure in the resonance reflection area is 0.1 um-10 um, and the grating period is 100 nm-1000 nm; the grating spacing is at least 30um.
Optionally, 3-5 quantum wells are included in the DFB gain region. The quantum well has a thickness of not more than 6nm.
Optionally, in the DFB gain region, a gain peak of the quantum well is λ1 and a grating bragg wavelength of the first N-buried grating layer is λ0.λ1=λ0+ (10 nm to 50 nm).
Alternatively, the waveguide and quantum well layers have a thickness of 50-300 nm. The refractive index of the waveguide material in the waveguide and quantum well layer is smaller than that of the quantum well material. The refractive index of the waveguide material is greater than the refractive index of the substrate material.
Optionally, the first N-type buried grating layer has a thickness of 10-120 nm. The distance between the first N-type buried grating layer and the waveguide and the quantum well layer is 200-900 nm.
Optionally, the width of the waveguide at the end of the passive graded waveguide region near the DFB gain region is the same as the width of the waveguide in the DFB gain region, and is 1-5 um. The width of the waveguide at one end of the passive graded waveguide region near the resonance reflection region is 20-150 um, which is the same as the width of the waveguide in the resonance reflection region.
Optionally, an end surface of the DFB gain region distal to the passive graded waveguide region is a first cleaved surface. The end face of one end of the resonance reflection area far away from the passive graded waveguide area is a second dissociation surface. The first and second dissociation surfaces are respectively covered with a high transmission film.
In a second aspect, the present application further provides a method for manufacturing a narrow linewidth semiconductor laser, which is used for manufacturing the narrow linewidth semiconductor laser, and includes the following steps:
sequentially extending an N-type cladding layer and buried grating layer materials on a substrate;
Manufacturing a grating structure in a buried grating layer material in a DFB gain region;
an N-type cladding layer is extended on the buried grating layer to form a grating spacing layer; growing a waveguide and a quantum well layer on the grating spacing layer;
removing the waveguide and the quantum well layer and the grating spacer layer in the passive graded waveguide region and the resonance reflection region;
Growing an passive waveguide layer on the N-type cladding in the passive graded waveguide region and the resonance reflection region;
manufacturing a grating structure on the passive waveguide layer in the resonance reflection area, and secondarily growing the passive waveguide layer on the passive waveguide layer of the passive graded waveguide area and the grating structure of the resonance reflection area;
a P-type cladding layer and a contact electrode layer are generated.
Optionally, fabricating a grating structure on the passive waveguide layer in the resonant reflection region, and secondarily growing the passive waveguide layer on the passive waveguide layer of the passive graded waveguide region and on the grating structure of the resonant reflection region, comprising:
Growing a grating material layer on the passive waveguide layer in the resonance reflection area, and making a glue masking glue layer on the grating material layer;
removing the grating material layer outside the glue mask to form a grating structure;
And carrying out secondary epitaxial growth of the passive waveguide layer in the passive graded waveguide region and the resonance reflection region until the height of the waveguide layer is consistent with that of the waveguide layer and the quantum well layer in the DFB gain region.
Optionally, generating the P-type cladding layer and the contact electrode layer includes:
growing a P-type cladding layer on the passive waveguide layer of the passive graded waveguide region and the resonance reflection region and on the waveguide and quantum well layer of the DFB gain region;
Forming a mesa mask on the P-type cladding layer, and protecting materials within the waveguide widths of the DFB gain region, the passive graded waveguide region and the resonance reflection region by using the mesa mask, wherein other parts are corroded to the substrate;
Sequentially growing a P-type material and an N-type material by reserving a mesa mask to form an NP reverse junction;
removing the mesa mask and sequentially growing a P-type cladding layer and a P-type contact layer;
Depositing an insulating dielectric film and removing insulating dielectric film materials within the width of the DFB gain area waveguide;
depositing a P-surface electrode metal material;
And thinning the substrate and depositing N-face electrode metal materials to finish heat treatment and alloying.
And (5) performing dissociation coating.
Advantageous effects
The narrow linewidth semiconductor laser provided by the embodiment of the invention can obtain the effect of compressing the linewidth of the DFB laser chip by utilizing the narrow-band resonance reflection effect of the buried grating through the reflection and self-injection mechanism inside the chip without an external light path, and can more easily obtain a structure with high performance and low refractive index difference and narrower reflection spectrum half-peak width and narrower output linewidth, and has the advantages of low preparation difficulty, low cost, high yield, stable structure and small size.
The manufacturing method of the narrow linewidth semiconductor laser provided by the embodiment of the invention can prepare the narrow linewidth semiconductor laser, and has the advantages of mature process, high yield, low production cost and low manufacturing cost.
Drawings
FIG. 1 is a top view of a narrow linewidth semiconductor laser in accordance with one embodiment of the present application;
FIG. 2 is a side view of a narrow linewidth semiconductor laser in accordance with one embodiment of the present application;
FIG. 3 is an enlarged schematic view of the resonant reflective region according to an embodiment of the present application;
fig. 4 is a reflection spectrum of a resonant reflection region corresponding to a second buried grating Δn=0.01 and Δn=0.05 according to an embodiment of the present application;
fig. 5 is a graph of a reflection spectrum of a resonant reflection region of a second buried grating Δn=0.01, which is an embodiment of the present application;
Fig. 6 is a flowchart of a method for fabricating a narrow linewidth semiconductor laser according to an embodiment of the present application;
Fig. 7 is a flowchart of a method for fabricating a narrow linewidth semiconductor laser according to another embodiment of the present application;
Fig. 8 is a flowchart of a method for fabricating a narrow linewidth semiconductor laser according to yet another embodiment of the present application.
The reference numerals are expressed as:
1. A second buried grating layer; 2. a rear end face high transmission film; 3. a first buried grating layer; 4. a waveguide structure; 5. a front face high transmission film; 6. an passive waveguide layer; 7. a contact electrode layer; 8. a P-type cladding layer; 9. waveguide and quantum well layers; 10. an N-type cladding layer; 11. the rear end face is high in transmission film.
Detailed Description
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
The first aspect of the present implementation provides a narrow linewidth semiconductor laser. Fig. 1 is a top view of a narrow linewidth semiconductor laser of the present embodiment. Fig. 2 is a side view of the narrow linewidth semiconductor laser of the present embodiment.
As shown in fig. 1 and 2, the narrow linewidth semiconductor laser of this embodiment includes a substrate, and a DFB gain region, a passive graded waveguide region, and a resonant reflection region sequentially disposed on the substrate from right to left. The DFB gain section comprises, in order from top to bottom, a first contact electrode layer, a first P-type cladding layer, a waveguide and quantum well layer 9, and a first N-type cladding layer. A first buried grating layer 3 is provided in the first N-type cladding layer. The passive graded waveguide region comprises a second contact electrode layer, a second P-type cladding layer, a first passive waveguide layer and a second N-type cladding layer from top to bottom in sequence. The resonance reflection area sequentially comprises a third contact electrode layer, a third P-type cladding layer, a second passive waveguide layer and a third N-type cladding layer from top to bottom. The second passive waveguide layer includes a second buried grating layer 1 therein. The optical signal of the DFB gain region is injected into the resonance reflection region through the passive graded waveguide region, the resonance reflection region compresses the line width and then is injected into the DFB gain region, and after multiple times of circulation, the DFB can output a narrow line width signal.
In some examples, as shown in fig. 2, the first contact electrode layer, the second contact electrode layer, and the third contact electrode layer are integrally connected, i.e., contact electrode layer 7. The first P-type cladding layer, the second P-type cladding layer and the third P-type cladding layer are connected into a whole, namely the P-type cladding layer 8. The first passive waveguide layer and the second passive waveguide layer are connected into a whole, namely the passive waveguide layer 6. The first N-type cladding layer, the second N-type cladding layer and the third N-type cladding layer are connected into a whole, namely the N-type cladding layer 10. So set up, have better integrated effect.
In some examples, as shown in fig. 1, the second buried grating layer 1 of the resonant reflection region is N-type, in which a multi-segment buried grating structure is included, and the grating direction is perpendicular to the laser cavity surface. The passive graded waveguide region comprises a section of non-gain waveguide structure 4, the width of the end of the waveguide structure 4 near the resonant reflection region being greater than the width of the end near the DFB gain region. The waveguide and quantum well layer 9 of the DFB gain region includes a waveguide layer and a quantum well layer, the waveguide layer includes a gain waveguide, a buried grating structure is disposed in the first N-type cladding layer of the DFB gain region, and the grating direction is parallel to the gain waveguide. The DFB gain region, the passive graded waveguide region and the resonant reflection region all comprise an N-type cladding layer 10 and a P-type cladding layer 8, and the N-type cladding layer 10 and the P-type cladding layer 8 in the three regions are made of the same epitaxial growth material. The line width compression assembly can be directly integrated on the substrate through the arrangement, coupling and feedback are simultaneously realized through the wafer-level process, the production cost is reduced, and the product performance is improved.
In some examples, the waveguide width of the passive graded waveguide region varies gradually in a direction along the laser cavity, as shown in fig. 1, where the waveguide width of the passive graded waveguide region coincides with the waveguide width of the DFB gain region at an end near the DFB gain region and coincides with the waveguide width of the resonant reflection region at an end near the resonant reflection region. It will be appreciated that the purpose of the passive graded waveguide region is to link the DFB gain region and the resonant reflection region such that the optical signal of the DFB gain region is injected into the resonant reflection region. Preferably, in order to avoid loss, the passive graded waveguide region does not contain absorption material and gain material, and the included angle between the waveguide graded line and the cavity in the passive graded waveguide region is smaller than 4 degrees.
In some examples, as shown in fig. 1, the resonant reflection region includes a plurality of second buried gratings 1, the second buried gratings 1 are N-type buried structures, the grating direction in each second buried grating 1 is perpendicular to the laser cavity surface, and the grating parameters are identical. So configured, the reflectance spectrum exhibits narrowband reflectance characteristics due to the presence of resonance effects.
In some examples, referring to fig. 1 and 2, the second N-type buried grating layer of the resonant reflective region includes at least three N-type buried vertical grating structures, the grating direction in each N-type buried vertical grating structure is perpendicular to the dissociation plane, and the grating parameters of the at least three N-type buried vertical grating structures are identical.
In some examples, referring to fig. 1 and 2, the material of the N-buried vertical grating structure in the resonant reflective region is the same as the grating material in the first N-buried grating layer in the DFB gain region; the direction of the N-type buried vertical grating structure in the resonant reflection region is perpendicular to the grating direction in the first N-type buried grating layer in the DFB gain region, and the periods are different.
In some examples, referring to fig. 1 and 2, the N-buried vertical grating structure in the resonant reflective region has a grating width of 0.1um to 10um and a grating period of 100nm to 1000nm; the grating spacing is at least 30um.
In the narrow-linewidth semiconductor laser of this embodiment, after the signal in the DFB gain region is reflected by the narrow-band, the linewidth of the signal fed back to the DFB gain region is narrowed, when the linewidth of the signal injected into the DFB gain region is smaller than the linewidth of the signal in the initial DFB gain region, the signal with the same linewidth as the signal injected into the DFB gain region is more easily excited in the DFB gain region, and then the signal excited again by the DFB gain region is fed back to the DFB gain region through the resonant reflection region, thereby further compressing the linewidth of the DFB gain region. And finally, when the stable state is reached, outputting the narrow linewidth signal compressed for many times by a cleavage surface at one end of the DFB gain region. The embodiment utilizes the narrow-band resonance reflection effect of the buried grating, can obtain the effect of compressing the linewidth of the DFB laser chip without an external light path through the reflection and self-injection mechanism inside the chip, can more easily obtain a structure with high performance and low refractive index difference value, and can more easily obtain a narrower reflection spectrum half-peak width and a narrower output linewidth, and has the advantages of low preparation difficulty, low cost, high yield, stable structure and small size.
In some embodiments, referring to fig. 1 and 2, 3-5 quantum wells are included in the dfb gain region. The quantum well has a thickness of not more than 6nm.
In some examples, referring to fig. 2, the refractive index of the waveguide material in the passive graded waveguide region is consistent with the refractive index of the waveguide material in the DFB gain region. The thickness of the first passive waveguide layer is greater than the sum of the thicknesses of the waveguide and quantum well layers 9 in the DFB gain region, the thickness of the first buried grating layer 3, and the spacing between the waveguide and quantum well layers 9 and the first buried grating layer 3. This arrangement enables the first passive waveguide layer to be leveled with the height of the waveguide and quantum well layer 9.
In some examples, referring to fig. 2, the refractive index and thickness of the second passive waveguide layer of the resonant reflection zone is the same as the refractive index and thickness of the first passive waveguide layer of the passive graded waveguide zone. So set up, can make the structure of chip more reasonable and the transmission of the optical signal of being convenient for.
The DFB gain region of this embodiment includes 3 to 5 quantum wells and the thickness of the quantum wells is not greater than 6nm, which is advantageous to obtain a narrower reflection spectrum half-peak width and a narrower output linewidth.
In some embodiments, referring to fig. 1 and 2, in the dfb gain region, the gain peak of the quantum well is λ1 and the grating bragg wavelength of the first buried grating layer 3 is λ0.λ1=λ0+ (10 nm to 50 nm). The arrangement is beneficial to the transmission and compression of optical signals.
In some embodiments, referring to fig. 1 and 2, the waveguide and quantum well layer 9 has a thickness of 50-300 nm. The refractive index of the waveguide material in the waveguide and quantum well layer 9 is smaller than the refractive index of the quantum well material. The refractive index of the waveguide material is greater than the refractive index of the substrate material.
In some examples, referring to fig. 2, the material with high refractive index in the second buried grating 1 of the resonant reflection region is the same as the material of the first buried grating 3 of the DFB gain region, the material with low refractive index in the second buried grating 1 is the same as the material of the first passive waveguide layer of the passive graded waveguide region, and the difference in refractive index between the high refractive index and the low refractive index material in the second buried grating 1 is less than 0.01. This arrangement is advantageous in obtaining a narrower half-width of the reflection spectrum and a narrower line width of the output.
The thickness of the waveguide and quantum well layer in this embodiment is 50-300 nm, and the refractive index of the waveguide material in the waveguide and quantum well layer 9 is smaller than that of the quantum well material. The refractive index of the waveguide material is larger than that of the substrate material, which is favorable for transmitting optical signals and is more favorable for obtaining narrower line width.
In some embodiments, referring to fig. 1 and 2, the first buried grating layer 3 has a thickness of 10-120 nm. The distance between the first buried grating layer 3 and the waveguide and quantum well layer 9 is 200-900 nm.
In some examples, referring to fig. 1 and 2, the number of second buried gratings 1 of the resonant reflective region is at least two.
The thickness of the first buried grating layer 3 in this embodiment is 10-120 nm, and the distance between the first buried grating layer 3 and the waveguide and quantum well layer 9 is 200-900 nm, so that the optical signal generated in the DFB gain region can be more stable.
In some embodiments, referring to fig. 1 and 2, the width of the waveguide at the end of the passive graded waveguide region near the DFB gain region is 1-5 um the same as the width of the waveguide in the DFB gain region. The width of the waveguide at one end of the passive graded waveguide region near the resonance reflection region is 20-150 um, which is the same as the width of the waveguide in the resonance reflection region.
In some examples, referring to fig. 1 and 2, the grating period of the second buried grating layer 1 of the resonant reflection region is less than the laser wavelength, the period is 100-1000 nm, the duty cycle is 0.25-0.75, the distance between two adjacent gratings in the second buried grating layer 1 is greater than 10um, the grating width is 50-4000 nm, and the grating thickness is 10-120 nm as the same as the thickness of the first buried grating layer 2 of the DFB gain region.
According to the arrangement, the included angle between the waveguide gradient line and the cavity in the passive gradient waveguide region is smaller than 4 degrees, and loss is reduced.
In some embodiments, referring to fig. 1 and 2, the end of the dfb gain region distal from the passive graded waveguide region is the first cleaved surface. The end face of one end of the resonance reflection area far away from the passive graded waveguide area is a second dissociation surface. The first and second dissociation surfaces are respectively covered with a high transmission film.
In this embodiment, as shown in fig. 1 and 2, one end of the DFB gain area is used as a first dissociation surface of the chip, and the dissociation surface is plated with an anti-reflection optical dielectric film: the front face has a high transmission film 5 and the gain region functions to produce output light of wavelength lambda. One end of the resonance reflection area is used as a second dissociation surface of the chip, and an anti-reflection optical medium film is plated on the dissociation surface: the rear face is highly transmissive film 11. The grating direction of the second buried grating layer 1 of the resonant reflection region is perpendicular to the first and second dissociation planes. The grating direction of the first buried grating layer 3 of the DFB gain region is parallel to the first and second dissociation planes. Preferably, the end-face reflectivity of both the DFB gain region and the resonant reflection region is less than 0.1%.
The foregoing describes a narrow linewidth semiconductor laser, and a method of fabricating the same is described next.
The second aspect of the present embodiment also provides a method for manufacturing a narrow linewidth semiconductor laser, which is used for manufacturing the narrow linewidth semiconductor laser. Fig. 6 is a flowchart of a method for manufacturing a narrow linewidth semiconductor laser according to the present embodiment. As shown in fig. 6, the manufacturing method includes the following steps:
s1, sequentially extending an N-type cladding layer 10 and buried grating layer materials on a substrate;
S2, manufacturing a grating structure in a buried grating layer material in a DFB gain region;
specifically, the method includes fabricating a grating structure in the DFB gain region by holographic exposure or electron beam exposure, and then forming the grating structure by etching or etching a portion of the grating layer material of the DFB gain region while retaining the grating layer material of the resonant reflection region.
S3, extending an N-type cladding layer 10 on the buried grating layer to form a grating spacing layer; and growing a waveguide and quantum well layer 9 on the grating spacer layer;
s4, removing the waveguide and the quantum well layer 9 and the grating spacer layer in the passive graded waveguide region and the resonance reflection region;
s5, growing an passive waveguide layer 6 on the N-type cladding 10 in the passive graded waveguide region and the resonance reflection region;
Specifically, the step includes etching or etching the second passive waveguide layer, the waveguide and quantum well layer 9 and the grating spacer layer of the passive graded waveguide region and the resonant reflection region using photolithography and etching processes.
S6, manufacturing a grating structure on the passive waveguide layer 6 in the resonance reflection area, and secondarily growing an passive waveguide layer 6 on the passive waveguide layer 6 of the passive graded waveguide area and the grating structure of the resonance reflection area;
s7, generating a P-type cladding layer 8 and a contact electrode layer 7.
According to the embodiment, by utilizing the narrow-band resonance reflection effect of the buried grating, the effect of compressing the line width of the DFB laser chip can be obtained through the reflection and self-injection mechanism inside the chip without an external light path. The integrated narrow linewidth laser uses a buried grating process to prepare a resonant reflection grating structure, so that a high-performance low-refractive-index difference structure is more easily obtained, and a narrower reflection spectrum half-peak width and a narrower output linewidth are obtained. The monolithic integrated narrow linewidth laser has the advantages of low preparation difficulty, low cost, high yield, stable structure and small size compared with a narrow linewidth scheme of a space light path or a silicon waveguide.
Fig. 7 is a flowchart of a method for fabricating a narrow linewidth semiconductor laser in accordance with another embodiment. In some embodiments, as shown in fig. 7, s6, fabricating a grating structure on the passive waveguide layer in the resonant reflection region, and secondarily growing the passive waveguide layer on the passive waveguide layer of the passive graded waveguide region and on the grating structure of the resonant reflection region; comprising the following steps:
S61, growing a grating material layer on the passive waveguide layer 6 in the resonance reflection area, and making a glue mask glue layer on the grating material layer;
specifically, the method comprises using photolithography to make a photoresist mask on the buried vertical grating structure of the resonant reflection region.
S62, removing the grating material layer outside the glue mask to form a grating structure;
Specifically, the method comprises the following steps: and manufacturing a grating structure on the glue-flooded film by using a holographic exposure process, and removing grating layer materials of the resonance reflection area through corrosion or etching to form the grating structure.
S63, carrying out secondary epitaxial growth of the passive waveguide layer 6 in the passive graded waveguide region and the resonance reflection region until the height of the waveguide and quantum well layer 9 is consistent with that of the DFB gain region.
Specifically, the method comprises the following steps: and (3) reserving a mask on the surface of the DFB gain region, and performing secondary epitaxial growth on the passive graded waveguide region and the resonance reflection region to grow a material consistent with the waveguide layer of the DFB gain region.
Fig. 8 is a flow chart of a method of fabricating a narrow linewidth semiconductor laser in accordance with yet another embodiment. In some embodiments, as shown in fig. 8, s7, a P-type cladding layer and a contact electrode layer are generated; comprising the following steps:
S71, growing a P-type cladding layer 8 on the passive waveguide layer 6 of the passive graded waveguide region and the resonance reflection region and the waveguide and quantum well layer 9 of the DFB gain region;
Specifically, the method comprises the following steps: the P-type cladding layer 8 is grown after removing the mask on the surface of the DFB gain region.
S72, forming a mesa mask on the P-type cladding layer 8, and protecting materials within waveguide widths of the DFB gain region, the passive graded waveguide region and the resonance reflection region by using the mesa mask, wherein other parts are corroded to the substrate;
s73, keeping a mesa mask to sequentially grow a P-type material and an N-type material to form an NP reverse junction;
S74, removing the mesa mask, and sequentially growing a P-type cladding layer 8 and a P-type contact layer;
s75, depositing an insulating dielectric film, and removing insulating dielectric film materials within the waveguide width of the DFB gain region;
Specifically, the method comprises the following steps: and depositing a layer of insulating dielectric film material, and removing the insulating dielectric film material within the width of the DFB gain region waveguide through photoetching and dry etching processes.
S76, depositing a P-surface electrode metal material;
s77, thinning the substrate and depositing an N-face electrode metal material to finish heat treatment and alloying.
S78, performing dissociation coating. Specifically, the left end face of the DFB gain area and the right end face of the passive graded waveguide area are taken as dissociation faces, dissociation coating is carried out, and the preparation of the chip is completed.
The above description describes the method for manufacturing the narrow-linewidth semiconductor laser, and the working principle of the narrow-linewidth semiconductor laser will be described next. The method comprises the following steps:
The conventional DFB laser is composed of a DFB gain region, a broad-spectrum anti-reflection film and a broad-spectrum high-reflection film, and the center wavelength of an optical signal emitted from the DFB gain region is assumed to be λ, and is affected by injection current noise, temperature noise and electro-optical conversion fluctuation noise, the wavelength of the gain region fluctuates between λ - Δλ and λ+Δλ, and since the broadband transmission spectrum and the reflection spectrum have the same reflectivity and transmissivity for the optical signal from λ - Δλ to λ+Δλ, the line width of the chip output wavelength is 2Δλ. In the DFB laser of the present embodiment, the buried grating structure having the resonance reflection effect is used instead of the broad-spectrum high-reflection film, and the resonance reflection can be understood as: when the optical signal with the wavelength of lambda-delta lambda to lambda + delta lambda is incident on the buried vertical grating structure, if the period of the grating is smaller than lambda, the diffraction order of the light with each wavelength is 0 level, namely, a part of the laser signal incident perpendicular to the grating is reflected vertically, and a part of the laser signal is transmitted vertically through the grating. Each wavelength transmission coefficient or reflection coefficient is associated with a buried grating structure.
Assume that for a fixed buried vertical grating structure, the reflectivity at λ 0 is 99.99995% and the reflectivity at λ 0 ±d/5000 is 99.999946%, where D is the half-peak width of the buried grating structure reflection spectrum. Under the condition that the gain area of the laser is not increased, a signal with the center wavelength lambda of 0 and the linewidth of 2Deltalambda is injected into the cavity of the laser, so that the signal oscillates between the front cavity surface and the back cavity surface for more than 3000 times, at the moment, the transmission loss of the signal with the wavelength lambda 0 is 1-99.99995% & lt 300000 & gtand 13.93%, and the transmission loss of the signal with the wavelength lambda 0 + -D/5000 is 14.96%. Since the transmission loss difference reaches 1%, the signal energy within the cavity between λ 0 ±d/5000 will be significantly higher than the signal energy at other wavelengths, and the signal energy drops significantly with the extent to which the wavelength deviates from λ 0 ±d/50000. When the gain exists in the laser gain region, the wavelength signal gain with high signal energy in the cavity is far higher than that of the signal with low signal energy, so that the signal energy between lambda 0 +/-D/5000 can be continuously amplified, and finally the output linewidth of the laser is compressed from 2 delta lambda to 2D/5000. The half-peak width of the buried grating structure of the material with the high refractive index and the material with the low refractive index, which have the refractive index difference smaller than 0.01, can be lower than 124MHz, namely the output linewidth of the laser can be compressed to be lower than 24 kHz.
Specifically, a semiconductor laser product with a certain narrow linewidth is taken as an example. As shown in fig. 1 and 2, the narrow linewidth semiconductor laser includes a resonant reflection region, a passive graded waveguide region, and a DFB gain region. Wherein,
The waveguide structure 4 of the DFB gain section is composed of multiple layers of N3.46-InGaAsP (N3.46-InGaAsP represents an InGaAsP material with a refractive index of 3.46) quantum wells and N3.375-InGaAsP (N3.375-InGaAsP represents an InGaAsP material with a refractive index of 3.375) waveguide layers, the gain spectrum peak of the quantum well material being located around 1570 nm. The first buried grating layer 3 is located in the N-type cladding layer 10 and is about 400nm away from the waveguide structure, the period of the grating in the first buried grating layer 3 is 243nm, the material is N3.385-InGaAsP, and the corresponding Bragg wavelength is 1550.0095nm. The waveguide width of the DFB gain section is 2um. The signal wavelength generated by the DFB gain section at this time is 1550.0095nm.
The passive graded waveguide region comprises primarily a second passive waveguide layer of material N3.375-InGaAsP. The included angle between the waveguide gradual change line of the passive gradual change waveguide area and the cavity is 2 degrees, and the length is 3000um, namely the width of the end waveguide of the passive gradual change waveguide area is about 100 um.
The second buried grating layer 1 of the resonance reflection region is positioned in the second passive waveguide layer, the waveguide layer material of the resonance reflection region is also N3.375-InGaAsP, the low refractive index material in the second buried vertical grating layer 1 is the waveguide layer material N3.375-InGaAsP, and the high refractive index material in the second buried grating layer 1 is the first buried grating material N3.385-InGaAsP of the DFB gain region. The structure of the second buried grating can be deduced from the following formula.
Fig. 3 is an enlarged schematic view of the structure of the resonant reflection region of the present embodiment. The parameters in equations (1) and (2) are shown in FIG. 3, the center wavelength λ 0; a grating period T; grating index n L/nH; grating width d; the structural spacing s. Where n L and n H are the refractive indices of the adjacent two materials and n eff is a constant obtained from n L and n H.
For the reflection spectrum peak λ 0 = 1550.0095nm, the calculated buried vertical grating structure is n L＝3.375,nH =3.385, t=458.91 nm, d=3um, s=30um. Through coupled wave simulation calculation, the peak value of the resonance reflection spectrum of the buried grating structure is exactly 1550.0095nm when the condition is met, and when the number of the buried grating structures is more than 5, the peak value reflectivity reaches more than 99.99995%, and the reflection spectrum bandwidth reaches 124Mhz, as shown in figure 4.
When the device starts to work, the laser wavelength generated by the DFB gain area is 1550.0095nm, and the wavelength fluctuation is 1550.0095 +/-0.0000012 nm due to the influence of injection current noise, temperature noise and electro-optical conversion fluctuation noise, namely, the signal linewidth is 300kHz. Before the device is in stable operation, the optical signal with the line width of 300kHz can make more than 30000 round trips between the front cavity surface and the back cavity surface of the laser, and each round trip can pass through a reflection spectrum curve such as a resonance reflection area in fig. 4.
As shown in FIG. 5, the 1550.0095001nm reflectivity is 99.999946%, the center wavelength 1550.0095nm reflectivity is 99.99995%, the 1550.0095001nm loss is obviously higher than 1550.0095nm after a plurality of round trips, and the energy in the laser cavity is gradually concentrated at 1550.0095 +/-0.0000001 nm, so that the optical gain in the wavelength ranges in the cavity is continuously increased, and the optical signal generation gain outside the wavelength ranges is inhibited. The final laser emission wavelength was compressed to 1550.0095.+ -. 0.0000001nm, i.e., signal linewidth was 24kHz. Typically, after the actual device is manufactured, the line width is typically an order of magnitude smaller than the theoretical estimation above, and the line width of the device of the invention can reach the level of 2 kHz.
Taking 1550nm wavelength narrow linewidth buried heterojunction structure edge-emitting laser as an example, the specific preparation process of the narrow linewidth semiconductor laser can be briefly described as follows:
Sequentially extending an N-type InP cladding layer and an N-type InGaAsP buried grating layer on an InP substrate material, wherein the refractive index of InGaAsP is 3.385;
Manufacturing a grating structure in the DFB gain region by utilizing holographic exposure or electron beam exposure, and then forming the grating structure by etching or etching part of grating layer materials in the DFB gain region, wherein the grating period is 241-247 nm, and the grating layer materials in the resonance reflection region are reserved;
Epitaxially growing an InP grating spacer layer of 250-450 nm, an InGaAsP waveguide layer and an InGaAsP quantum well, wherein the refractive index of the InGaAsP waveguide layer is 3.375;
Etching or etching the InGaAsP waveguide layer of the passive graded waveguide region and the resonance reflection region by using photoetching and etching processes, wherein the InGaAsP quantum well and the InP grating spacer layer;
Making glue masks on the buried vertical grating structure of the resonance reflection area by utilizing a photoetching process, wherein the width of each glue mask is 3um, the interval is 30um, the number is more than or equal to 5, then manufacturing a grating structure on the glue-flooded film by utilizing a holographic exposure process, the grating period is 458.91nm, removing InGaAsP grating layer materials of the resonance reflection area through corrosion or etching part to form a grating structure, and the grating direction is perpendicular to the cleavage plane of the laser;
Reserving a mask on the surface of the DFB gain region, and performing secondary epitaxial growth on the passive graded waveguide region and the resonance reflection region to grow a material consistent with the InGaAsP waveguide layer of the DFB gain region;
Removing the mask on the surface of the DFB gain area, and growing a P-type InP cladding layer;
Photoetching to form a mesa mask, burying to define the waveguide widths of three areas, wherein the waveguide width of the DFB gain area is 2um, the waveguide width of the waveguide gradual change area gradually changes from 2um to 100um, and the waveguide width of the resonance reflection area gradually changes from 100um to 106um;
Using a mesa mask to protect the material within the width of the waveguide, and corroding other parts to the substrate material;
Sequentially growing a P-type material and an N-type material by reserving a mesa mask to form an NP reverse junction;
removing the mesa mask and sequentially growing a P-type cladding layer and a P-type contact layer;
depositing a layer of insulating dielectric film material, and removing the insulating dielectric film material within the waveguide width of the DFB gain region through photoetching and dry etching processes;
depositing a P-surface electrode metal material;
And thinning the semiconductor substrate, depositing N-face electrode metal materials, and finishing heat treatment and alloying.
The chip takes the left end face of the DFB and the right end face of the passive waveguide area as dissociation faces to carry out dissociation coating, the coating film system adopts more than 4 pairs of high-low refractive index materials, the optical thickness of each layer of material is 67.5 nm-237 nm, and the effect that the reflectivity of 1550nm wave band is less than 0.1% is achieved.
The relationship between the reflectivity and the wavelength of the resonance reflection area of the monolithically integrated narrow linewidth laser manufactured according to the above parameters and process steps can be obtained by analog calculation, and the simulation structure is shown in fig. 4, when the center wavelength of the laser gain area is located at 1550.0095nm, a narrow linewidth signal is obtained. The narrow linewidth semiconductor laser has the following four advantages:
(1) The narrow linewidth laser signal can be stably output;
(2) The resonance reflection area adopts a buried grating process, so that the prepared grating has the characteristics of small refractive index difference, narrow reflection band width and narrow output signal line width;
(3) The preparation can be carried out by using the current mature process, the yield is high, and the cost is low;
(4) The coupling, the space light path and the optical element are not needed, and the manufacturing cost is low.
It will be readily appreciated by those skilled in the art that the above advantageous ways can be freely combined and superimposed without conflict.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application. The foregoing is merely a preferred embodiment of the present application, and it should be noted that it will be apparent to those skilled in the art that modifications and variations can be made without departing from the technical principles of the present application, and these modifications and variations should also be regarded as the scope of the application.
Claims (11)
1. A narrow linewidth semiconductor laser comprising: the substrate is sequentially arranged on the DFB gain region, the passive graded waveguide region and the resonance reflection region from right to left;
The DFB gain region sequentially comprises a first contact electrode layer, a first P-type cladding layer, a waveguide, a quantum well layer and a first N-type cladding layer from top to bottom; a first N-type buried grating layer is arranged in the first N-type cladding layer;
The passive graded waveguide region comprises a second contact electrode layer, a second P-type cladding layer, a first passive waveguide layer and a second N-type cladding layer from top to bottom in sequence;
the resonance reflection area sequentially comprises a third contact electrode layer, a third P-type cladding layer, a second passive waveguide layer and a third N-type cladding layer from top to bottom; the second passive waveguide layer comprises a second N-type buried grating layer;
The optical signal of the DFB gain region is injected into the resonance reflection region through the passive graded waveguide region, the resonance reflection region compresses the line width and then is injected into the DFB gain region, and after multiple times of circulation, the DFB can output a narrow line width signal;
The second N-type buried grating layer of the resonance reflection area comprises at least three N-type buried vertical grating structures, the grating direction in each N-type buried vertical grating structure is perpendicular to the dissociation plane, and grating parameters of the at least three N-type buried vertical grating structures are completely the same; the material of the N-type buried vertical grating structure in the resonance reflection region is the same as the grating material in the first N-type buried grating layer in the DFB gain region; the direction of the N-type buried vertical grating structure in the resonance reflection region is perpendicular to the grating direction in the first N-type buried grating layer in the DFB gain region, and the periods are different.
2. The narrow linewidth semiconductor laser as claimed in claim 1 wherein the N-buried vertical grating structure in the resonant reflective region has a grating width of 0.1um to 10um and a grating period of 100nm to 1000nm; the grating spacing is at least 30um.
3. The narrow linewidth semiconductor laser as in claim 1 wherein said DFB gain section includes 3-5 of said quantum wells therein; the quantum well has a thickness of no greater than 6nm.
4. The narrow linewidth semiconductor laser of claim 1 wherein the gain peak of the quantum well in the DFB gain region is λ 1 and the grating bragg wavelength of the first N-buried grating layer is λ 0;λ1＝λ0 + (10 nm to 50 nm).
5. The narrow linewidth semiconductor laser as claimed in claim 1 wherein the waveguide and quantum well layers have a thickness of 50-300 nm; the refractive index of the waveguide material in the waveguide and quantum well layer is smaller than that of the quantum well material; the refractive index of the waveguide material is greater than the refractive index of the substrate material.
6. The narrow linewidth semiconductor laser as claimed in claim 1 wherein the first N-buried grating layer has a thickness of 10-120 nm; the distance between the first N-type buried grating layer and the waveguide and the quantum well layer is 200-900 nm.
7. The narrow linewidth semiconductor laser of claim 1 wherein the waveguide width of the end of the passive graded waveguide region near the DFB gain region is 1-5 um the same as the waveguide width in the DFB gain region;
the width of the waveguide at one end of the passive graded waveguide region, which is close to the resonance reflection region, is 20-150 um, which is the same as the width of the waveguide in the resonance reflection region.
8. The narrow linewidth semiconductor laser of claim 1 wherein an end face of the DFB gain region distal to an end of the passive graded waveguide region is a first cleaved surface; the end face of one end, far away from the passive graded waveguide region, of the resonance reflection region is a second dissociation surface; the first and second dissociation surfaces are respectively covered with a high transmission film.
9. A method for manufacturing a narrow linewidth semiconductor laser according to any one of claims 1 to 8, comprising the steps of:
sequentially extending an N-type cladding layer and an N-type buried grating layer on the substrate;
manufacturing a grating structure in an N-type buried grating layer in the DFB gain region;
An N-type cladding layer is extended on the N-type buried grating layer to form a grating spacing layer; growing a waveguide and a quantum well layer on the grating spacing layer;
Removing the waveguide and quantum well layers and the grating spacer layer in the passive graded waveguide region and the resonant reflection region;
growing an passive waveguide layer on the N-type cladding layer in the passive graded waveguide region and the resonance reflection region;
manufacturing a grating structure on an passive waveguide layer in the resonance reflection area, and secondarily growing the passive waveguide layer on the passive waveguide layer of the passive graded waveguide area and the grating structure of the resonance reflection area;
a P-type cladding layer and a contact electrode layer are generated.
10. The method of fabricating a narrow linewidth semiconductor laser as defined in claim 9 wherein fabricating a grating structure on the passive waveguide layer in the resonant reflection region, and secondarily growing an passive waveguide layer on the passive waveguide layer of the passive graded waveguide region and on the grating structure of the resonant reflection region, comprises:
growing a grating material layer on the passive waveguide layer in the resonance reflection area, and making a glue mask glue layer on the grating material layer;
removing the grating material layer outside the glue mask to form the grating structure;
And carrying out secondary epitaxial growth of the passive graded waveguide layer and the resonance reflection region until the height of the passive graded waveguide layer is consistent with that of the waveguide and the quantum well layer of the DFB gain region.
11. The method of fabricating a narrow linewidth semiconductor laser as claimed in claim 9 wherein said generating a P-type cladding layer and a contact electrode layer comprises:
Growing a P-type cladding layer on the passive graded waveguide layer of the passive graded waveguide region and the passive waveguide layer of the resonant reflection region and on the waveguide and quantum well layer of the DFB gain region;
forming a mesa mask on the P-type cladding layer, and protecting materials within waveguide widths of the DFB gain region, the passive graded waveguide region and the resonance reflection region by using the mesa mask, wherein other parts are corroded to a substrate;
Sequentially growing a P-type material and an N-type material by reserving a mesa mask to form an NP reverse junction;
Removing the mesa mask, and sequentially growing a P-type cladding layer and a P-type contact layer;
Depositing an insulating dielectric film and removing insulating dielectric film materials within the width of the DFB gain area waveguide;
depositing a P-surface electrode metal material;
thinning the substrate and depositing N-face electrode metal material to finish heat treatment and alloying;
And (5) performing dissociation coating.
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| JPH1093185A (en) * | 1996-09-12 | 1998-04-10 | Matsushita Electric Ind Co Ltd | Semiconductor laser and method of manufacturing the same |
| CN110401105A (en) * | 2019-08-12 | 2019-11-01 | 武汉敏芯半导体股份有限公司 | Single chip integrated narrow linewidth laser and production method |
| CN111313229A (en) * | 2020-03-03 | 2020-06-19 | 中国科学院半导体研究所 | Narrow linewidth distributed feedback semiconductor laser and preparation method thereof |
| CN111740311A (en) * | 2020-08-01 | 2020-10-02 | 武汉敏芯半导体股份有限公司 | Narrow linewidth tunable laser and preparation method thereof |
| CN115411612A (en) * | 2022-09-05 | 2022-11-29 | 武汉敏芯半导体股份有限公司 | Narrow linewidth semiconductor laser and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH1093185A (en) * | 1996-09-12 | 1998-04-10 | Matsushita Electric Ind Co Ltd | Semiconductor laser and method of manufacturing the same |
| CN110401105A (en) * | 2019-08-12 | 2019-11-01 | 武汉敏芯半导体股份有限公司 | Single chip integrated narrow linewidth laser and production method |
| CN111313229A (en) * | 2020-03-03 | 2020-06-19 | 中国科学院半导体研究所 | Narrow linewidth distributed feedback semiconductor laser and preparation method thereof |
| CN111740311A (en) * | 2020-08-01 | 2020-10-02 | 武汉敏芯半导体股份有限公司 | Narrow linewidth tunable laser and preparation method thereof |
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