CN105281199B - The V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe - Google Patents

Abstract

The invention discloses a V-shaped coupled cavity double-wavelength semiconductor laser with continuously adjustable frequency interval. The first active resonant cavity and the second active resonant cavity are coupled in a V-shape at one end to form a multimode coupling region, the end face of the multimode coupling region has a cavity surface reflection surface, the other end of the first active resonant cavity and the first passive The source filters are connected in series through deep etched grooves to form one arm of the laser; the other end of the second active resonator and the second passive filter are connected in series through deep etched grooves to form the other arm of the laser; the first active Shallow etching grooves are arranged on the resonant cavity and the second active resonant cavity. The laser of the invention has the advantages of compact structure, simple manufacturing process, low cost, no external reference light source and the like.

Description

V-coupled cavity dual-wavelength semiconductor laser with continuously adjustable frequency interval

technical field

The invention relates to the field of microwave photonics, in particular to a single-chip integrated and continuously adjustable frequency interval V-shaped coupling cavity double-wavelength semiconductor laser for microwave generation.

Background technique

Signals in the microwave frequency band have very important applications in many fields such as wireless communication, radar detection, and microwave sensing. Especially in recent years, with the rapid increase of users' requirements for wireless data traffic and the rapid development of "mobile Internet", high-speed broadband wireless communication technology has become the development direction of next-generation wireless communication technology and a new growth point of market demand. Microwave photon technology, especially the generation of microwave light source, as the core technology of "mobile Internet", is becoming a research hotspot in various research groups and academic institutions.

The generation of microwave carriers based on the beat frequency of two beams with similar wavelengths is the main way to realize optically generated microwave carriers. The technologies that have been reported so far mainly include three categories: fiber lasers or semiconductor lasers based on multi-grating coupling; microwave light source systems based on optical nonlinear effects to generate high-frequency microwave carriers; and semiconductor lasers based on coupled cavity coupling.

Fiber lasers based on grating coupling generally have good spectral characteristics and microwave spectral characteristics because their gratings can be made very long, and have a long gain region, and can perform complex control methods such as polarization control or phase locking. It has disadvantages such as untunable microwave frequency, complex manufacturing process, bulky system, and high cost.

The microwave light source system based on the nonlinear effect of optical fiber can generally realize the continuous adjustment of the microwave frequency, and the two wavelengths based on the nonlinear effect generally have a good phase correlation, and can achieve a narrow microwave spectrum linewidth. Including technologies based on sideband generation such as intensity modulation, phase modulation, four-wave mixing or stimulated Brillouin scattering, injection locking technology, and phase-locked loop technology. However, it needs to provide an accurate microwave local oscillator source, which has disadvantages such as complicated technical implementation, huge system, and high cost.

For the generation of microwave carriers, lasers are usually required to generate two adjacent dual wavelengths with stable frequency spacing and intensity. The most common structure is based on the series coupling of two DFBs with different grating periods. Figure 1 is a schematic diagram of a dual-wavelength semiconductor laser based on grating coupling, which was reported in "Dual-wavelength InGaAs-GaAs ridgewaveguide distributed Bragg reflector lasers with tunable mode separation.", Roh, S.D, et al. Photonics Technology Letters, IEEE 12.10 (2000 ): 1307-1309, due to the mode selection effect of the grating, this type of laser generally has good single-mode and frequency stability. However, this type of laser involves complex grating fabrication and secondary epitaxial growth, and the cost is very high.

In order to provide a cheap dual-wavelength frequency interval tunable semiconductor laser, He Jianjun proposed a dual-wavelength semiconductor laser based on multi-segment FP resonator coupling in 2005, which was disclosed in the US invention patent: "Dual-wavelength semiconductor laser", publication number: US20050243882 A1. Figure 2 is a schematic diagram of the structure of the laser. It consists of three Fabry-Perot resonators connected in series through deeply etched grooves, and the width of each deeply etched groove is an odd multiple of a quarter wavelength. The two adjacent Fabry-Perot resonators have equal optical lengths and are used to generate a series of dual-wavelength comb spectra. Another shorter Fabry-Perot etalon acts as a filter to select one of the dual-wavelength modes. This type of laser can achieve continuous tuning of the frequency interval of two wavelengths, and the production cost is relatively low. However, due to the limitation of the precision of the manufacturing process, it is difficult to accurately control the width of the deep etching groove, and at the same time, the size of the device is relatively long, and the yield of the manufacturing is not high.

Contents of the invention

Aiming at the deficiencies of the prior art, the present invention aims to propose a V-shaped coupled cavity dual-wavelength semiconductor laser with continuously adjustable frequency interval, which has the advantages of continuously adjustable microwave frequency, compact structure, and large manufacturing process tolerance. It avoids very precise process preparation conditions, and at the same time has a series of advantages of coupled cavity semiconductor lasers.

The technical scheme adopted in the present invention is:

The laser of the present invention comprises a first active resonant cavity, a second active resonant cavity, a first passive filter and a second passive filter, and a connection between the first active resonant cavity and one end of the second active resonant cavity V-shaped phase coupling forms a multi-mode coupling area, forming a V-shaped cavity. The end face of the multi-mode coupling area has a cavity surface reflection surface, and the multi-mode coupling area is a quarter-wavelength coupling area, that is, the direct coupling coefficient of the multi-mode coupling area and the intersection There is a 90° phase difference between the coupling coefficients; the other end of the first active resonant cavity and the first passive filter are connected in series to form one arm of the laser through deep etched grooves; the other end of the second active resonant cavity and The other arm of the laser is formed in series through deep etched grooves between the second passive filters; a section of the waveguide of the first active resonant cavity where the multimode coupling region is located and the remaining waveguides of the first active resonant cavity are provided for Electrically isolated shallow etched grooves, shallow etched grooves for electrical isolation are provided between a segment of the waveguide of the second active resonant cavity where the multimode coupling region is located and the rest of the waveguides in the second active resonant cavity.

The first active resonant cavity and the second active resonant cavity have equal optical lengths.

The optical lengths of the first passive filter and the second passive filter are both odd multiples of a quarter of the laser emission wavelength and are different from each other.

The optical length of the deep etched groove between the first active resonant cavity and the first passive filter and the deep etched groove between the second active resonant cavity and the second passive filter is 1/4 Odd multiples of the laser emission wavelength.

Phase fine-tuning electrodes for phase adjustment are arranged on the multi-mode coupling area.

The first active resonant cavity and the second active resonant cavity other than the multimode coupling region are respectively provided with a first gain tuning electrode and a second gain tuning electrode.

The first passive filter and the second passive filter are respectively provided with a first wavelength fine-tuning electrode and a second wavelength fine-tuning electrode for adjusting the refractive index, which are used to realize the alignment between the laser lasing mode and the center of the filter. allow

Preferably, both the first active resonator and the second active resonator can be active Fabry-Perot resonators.

Preferably, both the first passive filter and the second passive filter can use passive Fabry-Perot resonators.

The two-section active resonator of the present invention will produce a series of dual-wavelength lasing modes when the electrical injection reaches the threshold gain, and the passive filter selects one of the dual-wavelength modes as a band-pass filter, and the dual-wavelength laser output The frequency interval changes with the ratio of the injection current of the two arms, and the microwave carrier signal corresponding to the difference frequency is received by the high-speed detector. The invention can realize the tunable microwave carrier frequency by changing the injection current ratio of the active regions of the two arms. A tuning electrode is also provided on the passive filter to align the lasing wavelength with the passband center of the filter and improve the mode selectivity of the dual-wavelength mode.

Compared with the background technology, the present invention has the beneficial effects of:

The invention does not need to make a grating, and the manufacturing cost is low.

The V-shaped cavity structure of the invention can reduce the length of the device and make the structure of the device more compact and simple.

The quarter-wavelength coupler of the invention is provided with a tuning electrode, which can fine-tune the phase of the coupler, increases the tolerance of the device, and improves the yield of the device.

The invention does not need to set an external microwave signal source, which reduces the complexity and cost of the system.

In the present invention, the gain adjustment electrodes are arranged on the two active regions, and the continuous tuning of the frequency interval between the two wavelengths can be realized by simply adjusting the gain difference between the two arms, and the tuning algorithm is simple.

The wavelength fine-tuning electrodes are arranged on the two passive filters of the present invention, which are used to fine-tune the refractive index of the passive waveguide, realize the alignment of the passband center of the passive filter and the lasing wavelength, and can realize better mode selectivity at the same time and a large free spectral range.

To sum up the above, the present invention is small in size and short in size, and the performance of the manufactured device does not require high precision of the etching groove width, the etching width is easy to accurately control, the manufacturing process is simple, the manufacturing cost can be greatly reduced, and it has greater development prospects and commercial application value.

Description of drawings

FIG. 1 is a schematic diagram of a dual-wavelength semiconductor laser with adjustable frequency spacing based on grating coupling in the background art.

FIG. 2 is a schematic diagram of an adjustable frequency spacing dual-wavelength semiconductor laser based on etching groove coupling in the background art.

Fig. 3 is a structural schematic diagram of the present invention.

FIG. 4 is a schematic cross-sectional view of a phase fine-tuning electrode of the present invention.

Fig. 5 is a schematic cross-sectional view of one arm of the present invention along the transmission direction of the waveguide.

Fig. 6 is a graph showing the relationship between the transmittance and reflectance of deep etched air grooves and the groove width at a wavelength of 1550nm.

Fig. 7 is a small signal gain spectrum diagram under the threshold without considering the passive waveguide filter according to the embodiment of the present invention.

Fig. 8 is a threshold gain spectrum diagram of an embodiment of the present invention when passive waveguide filters are not considered.

FIG. 9 is a small signal gain spectrum diagram of the two arms under different injection gains under the threshold value when the passive waveguide filter is not considered according to the embodiment of the present invention.

Fig. 10 is a diagram showing the relationship between the frequency interval of two wavelengths and the gain difference between the two arms when the passive waveguide filter is not considered in the embodiment of the present invention.

Fig. 11 is a diagram of the relationship between the maximum frequency separation of two wavelengths and the length of the active waveguide cavity when the passive waveguide filter is not considered in the embodiment of the present invention.

Fig. 12 is a diagram showing the relationship between the frequency separation of two wavelengths and the through-coupling coefficient under two different arm lengths in the embodiment of the present invention when the passive waveguide filter is not considered.

FIG. 13 is a reflection spectrum and a superposition spectrum of a two-stage passive waveguide filter according to an embodiment of the present invention.

Fig. 14 is a small signal gain spectrum diagram under the threshold after considering two passive waveguide filters according to the embodiment.

Fig. 15 is a graph of the threshold gain spectrum after considering two passive waveguide filters according to the embodiment of the invention.

In the figure: 1. Multimode coupling area, 2. The first active resonant cavity, 3. The second active resonant cavity, 4. The first passive filter, 5. The second passive filter, 6. Deep etching Groove, 7, cavity surface reflector, 8, phase fine-tuning electrode, 9, first gain adjusting electrode, 10, second gain adjusting electrode, 11, first passive filter adjusting electrode, 12, second passive filter Adjusting electrode, 13, upper cladding layer, 14, active region, 15, buffer layer, 16, substrate layer, 17, back electrode, 18, shallow etching groove.

detailed description

The present invention will be described in detail below according to the drawings and embodiments.

The present invention uses a semiconductor laser based on coupled cavity coupling, and utilizes multi-segment FP cavity coupling to generate dual wavelengths. Compared with the first two methods in the background technology, the microwave spectrum line width produced by it will have a certain broadening, but because the two wavelengths share A gain cavity has the same external environment and a strong phase correlation between two wavelengths, which can achieve better microwave spectrum characteristics.

Embodiments of the present invention and working principle thereof are as follows:

In the specific implementation, as shown in Figure 3, the present invention includes two sections of equal-length active Fabry-Perot resonators and two sections of unequal-length passive Fabry-Perot resonators, the V-shaped cavity The two arms are coupled and connected through a quarter-wavelength coupling region 1, and the end face of the multimode coupling region 1 has a cavity surface reflection surface 7, and each arm of the V-shaped cavity is composed of an active Fabry-Perot resonator cavity and a wireless The source Fabry-Perot etalons are connected in series, and the phase difference between the through-coupling coefficient and the cross-coupling coefficient of the formed quarter-wavelength coupling region is 90°. Shallow etching grooves 18 for electrical isolation are provided at the joints between the first active resonant cavity 2 and the second active resonant cavity 3 at the part located in the multimode coupling region 1 and the rest of the active resonant cavity.

Between the first active Fabry-Perot resonator 2 and the first passive Fabry-Perot resonator 4, an arm of the laser is formed in series through a deep etched groove 6, and the second active Fabry-Perot resonator The other arm of the laser is formed in series between the Luo resonator 3 and the second passive Fabry-Perot resonator 5 through a deep etched groove 6; the active Fabry-Perot resonator 2 and the active Fabry-Perot resonator - The Perot resonators 3 are connected through a quarter-wavelength coupler. The phase fine-tuning electrode 8 is arranged on the coupling area, the gain adjustment electrodes 9 and 10 are arranged on the two-arm active resonant cavity, and the refractive index fine-tuning electrodes 11 and 12 are arranged on the two-arm passive filter.

Here, the through-coupling coefficient is defined as the ratio of the light field intensity of the active Fabry-Perot resonator back to its own resonator after being reflected by the end face of the multimode coupling region 1 to the incident light field intensity, and the cross-coupling coefficient is the active Fabry-Perot resonator The ratio of the intensity of the light field entering another resonator after being reflected by the end face of the multimode coupling region 1 in the Li-Perot resonator to the intensity of the incident light field.

When the laser is working, the quarter-wavelength coupler and two equal Fabry-Perot active cavities will appear a series of dual-wavelength comb spectra under the condition of electrical injection. The slightly shorter Fabry-Perot resonator is used as a filter to select a pair of dual wavelengths as the final lasing mode. The output dual-wavelength beat frequency signal can be converted into a corresponding microwave carrier signal by receiving and converting it through a high-speed photodetector. By adjusting the injection current ratio of the two-arm active resonant cavity, the frequency interval between the two wavelengths can be adjusted, and the output light intensity can be kept constant, thereby realizing the tunable microwave carrier signal. For passive filters, the effective refractive index of the waveguide can be changed by the carrier injection effect or the reverse polarization electro-optic effect, and the central wavelength of the passive filter can be controlled by an electrical feedback signal, thereby stabilizing the relative intensity between the two wavelengths.

Compared with the dual-wavelength semiconductor laser coupled by etching grooves, the semiconductor laser based on the quarter-wave coupler can provide a certain range of phase compensation due to the bias current on the coupler electrode, which greatly increases the manufacturing tolerance of the laser process and improves The yield rate of device fabrication is improved. At the same time, the structure of the V-shaped cavity also makes the size of the device more compact and improves the integration of the device.

As shown in Fig. 4, the layered shape of the specific implementation laser is composed of a substrate layer 16, a buffer layer 15, a core layer 14 providing optical gain, and an upper cladding layer 13, and the upper and lower surfaces of the device are plated with different electrode metals The materials form P-type electrodes and N-type electrodes, the first and second gain adjustment electrodes 9 and 10 are used as P-type electrodes, and the back electrode 17 at the bottom of the substrate layer 16 is used as N-type electrodes. This provides optical gain through electrical injection. Generally, the core layer is composed of multiple quantum well layers, and a certain amount of doping is carried out according to different situations. From the perspective of cross-section, ridge waveguides or buried waveguides are generally used to confine the light field.

As shown in Figure 5, except that the active waveguide and the passive filter are separated by a deep etched groove 6, the phase fine-tuning electrode on the quarter-wavelength coupler and the gain electrode on the active resonator Shallow etched trenches 18 are also required for electrical isolation.

Deeply etched grooves in the laser structure serve as highly reflective surfaces for the resonator. In order to achieve high reflectivity, the width of the deeply etched groove must be an odd multiple of a quarter wavelength. The relationship between the transmittance and reflectance of deep air-etched grooves and the groove width is shown in Figure 6. It can be found that the maximum value of reflectivity appears only at odd multiples of a quarter wavelength. Theoretically, when the width of the air slot is a quarter of the wavelength, the loss is the smallest. With the increase of the slot width, the loss of the light field will increase due to the mode diffusion and diffraction effect in the air slot, so the peak value of the reflectivity is gradually increasing. decrease. On the other hand, the reduction of the groove width requires higher and higher precision of the manufacturing process. For the wavelength of 1550nm, the quarter wavelength is only 0.3875um, and it is difficult for ordinary photolithography to meet the requirements. For the current process, the error of the air groove is on the order of ±0.1um. In order to meet the requirements of the process, 5/4λ is generally used, that is, 1.94um, where λ is the working wavelength of the laser.

In order to clarify the working principle of the dual-wavelength laser, first only the laser structure without a passive filter is considered, and the small-signal gain spectrum of the V-cavity laser without a filter is calculated by the transfer matrix method, as shown in Figure 7. Assuming that the effective refractive index of the laser is 3.29, the cavity length of the two active resonators is L ₁ =L ₂ =210.1um, the through-coupling coefficient of the quarter-wavelength coupler is 0.6, and the two arms have equal gain coefficients (g1=g2=29.9cm ^-1 ), a series of dual-wavelength comb spectra can be found, the wavelength interval between the two wavelengths is 0.42nm, and the free spectral range is 1.6nm. The threshold gain spectrum in the corresponding case is shown in Fig. 8. It can be found that the quarter-wavelength coupler has no mode selectivity, and all dual-wavelength modes can start to oscillate simultaneously.

The small-signal gain spectra of the two arms of the laser under the conditions of equal injection gain and different gains are shown in Figure 9. The laser parameters are set to the active cavity length L ₁ =L ₂ =210.1um, and the quarter-wavelength coupler The thru coupling factor is 0.8. When the two arms inject equal gains (the first gain and the second gain are g1=g2=29.87cm ^-1 respectively), the small signal gain spectrum is the same as that in Figure 7, and the wavelength interval between the two wavelengths is 0.356nm, corresponding to the frequency interval is 44.5GHz, as shown by the solid line in Figure 9. If the gain difference between the two arms is increased, the frequency separation between the two wavelengths decreases. As shown by the dotted line in Fig. 9, when g1=0cm ^-1 and g2=59.7cm ^-1 , the wavelength interval between the two wavelengths is 0.152nm, and the corresponding frequency interval is 19GHz. Figure 10 shows the relationship between the dual-wavelength frequency interval and the gain difference between the two arms when the passive waveguide filter is not considered, here the cavity length L ₁ =L ₂ =210.1um of the two active resonant cavities is set, The direct coupling coefficient is 0.6, and it can be found that when the two arms have equal gains, the frequency separation between the two wavelengths is the largest, and as the gain difference between the two arms increases, the frequency separation between the two wavelengths gradually decreases.

Fig. 11 shows the relationship between the maximum frequency separation of two wavelengths (corresponding to two arms having equal gain coefficients) and the cavity length of the active cavity when the passive waveguide filter is not considered in the embodiment of the present invention. The through-coupling coefficient of the coupler is set to 0.6, and it can be found that the maximum frequency separation of the two wavelengths decreases with the increase of the cavity length.

Figure 12 shows the relationship between the maximum frequency separation at two wavelengths (corresponding to two arms having equal gain coefficients) and the quarter-wave coupler through-coupling coefficient. With the increase of the through-coupling coefficient of the coupler, the maximum frequency interval between the two wavelengths is gradually reduced, so the cavity length of the laser and the parameters of the coupler can be reasonably selected according to the needs.

Since the quarter-wavelength coupler itself has no mode selectivity, in order to select a certain dual-wavelength mode in the dual-wavelength frequency comb as the lasing mode, it is necessary to use a passive filter for filtering mode selection. Fig. 13 shows the reflection spectrum and superposition spectrum of the two-stage passive waveguide filter of the embodiment of the present invention. The cavity length of the two arms of the laser is set to L ₁ =L ₂ =210um, the width of the etched groove is set to 5/4λ, and the lengths of the two passive filters are L _f1 =19.9um and L _f2 =61.4um respectively. The mode at the center of the filter will be fired with the lowest threshold gain. The free spectral range of the filter is determined by the cavity length of the filter, satisfying △f=c/2ng L _p , where _{c is the speed of light in vacuum, n g is} the group velocity of light propagating in the waveguide, and L _p is the The cavity length of the source filter. In order to have only one dual-wavelength mode lasing in the gain spectrum, one of the filter lengths must be short enough to ensure that its free spectral range is larger than the laser's gain spectral width. However, the full width at half maximum of the filter function corresponding to a shorter filter is wider, and the mode selection ratio is not high. This can achieve a narrower filter function and a wider free spectral range at the same time by adding a longer passive filter. The corresponding small-signal gain spectrum including two passive filters is shown in Figure 14. It can be found that only one dual-wavelength mode can start to oscillate, and Figure 15 shows the corresponding threshold gain spectrum. It is found from the figure that the position corresponding to the center wavelength of the filter has the lowest threshold gain, which is 44.5cm-1, the threshold gain of the adjacent dual-wavelength mode is 49.5cm-1, and the threshold gain difference reaches 5cm-1, which has a very good Mode selectivity.

If the center wavelength of the filter can be aligned with the center of the dual-wavelength mode, the two modes will have the same threshold gain and start to oscillate at the same time, and have the same output power. However, due to unstable factors such as mode competition or temperature drift in the cavity, the output power of the two wavelengths will fluctuate to a certain extent. In order to stabilize the relative intensity between the two wavelengths, an electrical feedback signal can be loaded onto the passive filter, and the central wavelength of the filter can be fine-tuned by changing the refractive index of the passive filter. The electrical feedback signal can stabilize the intensity of the microwave carrier signal output by the PD by integrating a photodetector on-chip or outside the cavity, and using a dual-wavelength beat signal as negative feedback.

For passive filters, it can be realized by etching and regrowing a passive waveguide with a larger forbidden band width, or by some chip post-processing methods, such as quantum well hybrid technology. If the fabrication process does not permit, this can also be achieved by electrically injecting the active filter just below the threshold gain.

To sum up the above, the present invention is small in size and simple in manufacturing process. The introduction of the quarter-wavelength coupler can not only realize the dual-wavelength lasing of the laser, but also greatly increase the tolerance of the manufacturing process of the device and improve the yield of the device. Highlight significant technical effects. In addition, the present invention can realize the continuous adjustment of the frequency interval of two wavelengths with a simple algorithm without introducing an external local oscillator light source, and can also realize the stability of microwave power and frequency by using the negative feedback signal, which has great advantages. development prospects and commercial application value.

The above-mentioned embodiments are used to illustrate the present invention, but not to limit the present invention. Within the spirit of the present invention and the protection scope of the claims, any modifications and changes made to the present invention fall within the protection scope of the present invention. For example, one air slot between cavities can be replaced by multiple air slots, and the number of passive etalons can be one or more, which can achieve better filter performance according to needs. The space between the deep etching grooves is not necessarily filled with air, but may also be SiO ₂ , SiN or BCB and other materials often involved in semiconductor processes. The end face of the laser can be defined by deep etch groove, deep etch face, or by cleavage end face. The end face of the cavity surface can also be coated to meet the needs of different situations.

Claims (9)

1. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe, including the first active resonant cavity (2), the second active resonant cavity (3), the first passive filter (4) and the second passive filter (5)；It is characterized in that：First has It is coupled to form Multiple modes coupling area (1), Multiple modes coupling area with V-arrangement between source resonator (2) and the second active resonant cavity (3) one end (1) end face has Cavity surface reflecting surface (7), and Multiple modes coupling area (1) is quarter-wave coupled zone；First active resonant cavity (2) deep etching groove (6) laser in series between the other end and the first passive filter (4) by being reflected for part An arm；It is deep by being reflected for part between the other end and the second passive filter (5) of second active resonant cavity (3) Lose another arm of groove (6) laser in series；The first active resonant cavity (2) waveguide and first where Multiple modes coupling area (1) Between active resonant cavity (2) remaining waveguide be provided with for be electrically isolated shallow etching groove (18), second where Multiple modes coupling area (1) The shallow etching groove (18) for being electrically isolated is provided between active resonant cavity (3) waveguide and the second active resonant cavity (3) remaining waveguide.

2. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：Described the first active resonant cavity (2) has equal optical length with the second active resonant cavity (3).

3. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：Described the first passive filter (4) and the optical length of the second passive filter (5) are a quarter laser It is emitted the odd-multiple of wavelength and different.

4. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：Deep etching groove (6) and second between first active resonant cavity (2) and the first passive filter (4) is active The optical length of deep etching groove (6) between resonator (3) and the second passive filter (5) is a quarter laser emitting ripple Long odd-multiple.

5. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：Described Multiple modes coupling area (1) is provided with fine tuning phase electrode (8).

6. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：First active resonant cavity (2) and second active resonant cavity (3) point in addition to Multiple modes coupling area (1) She You not the first gain tuning electrode (9) and the second gain tuning electrode (10).

7. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：First wave length trimming electrode is respectively equipped with described the first passive filter (4) and the second passive filter (5) And second wave length trimming electrode (12) (11).

8. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：Described the first active resonant cavity (2) uses active Fabry-Perot resonance with the second active resonant cavity (3) Chamber.

9. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its It is characterised by：Described the first passive filter (4) and the second passive filter (5) use passive Fabry-Perot resonance Chamber.