CN116961610A - sonic components - Google Patents
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- CN116961610A CN116961610A CN202210412360.7A CN202210412360A CN116961610A CN 116961610 A CN116961610 A CN 116961610A CN 202210412360 A CN202210412360 A CN 202210412360A CN 116961610 A CN116961610 A CN 116961610A
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- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000004020 conductor Substances 0.000 claims abstract description 32
- 238000003466 welding Methods 0.000 claims abstract 10
- 239000010410 layer Substances 0.000 claims description 143
- 239000011241 protective layer Substances 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 238000005476 soldering Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 14
- 238000010897 surface acoustic wave method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005272 metallurgy Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005549 size reduction Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
- H03H9/02724—Comb like grating lines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/058—Holders or supports for surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
技术领域Technical field
本发明是涉及一种半导体技术领域,特别是有关于一种可以提升频率享应性能的声波组件。The present invention relates to the field of semiconductor technology, and in particular, to an acoustic wave component that can improve frequency response performance.
背景技术Background technique
表面声波组件(SAW,surface acoustic wave)能够通过将功率施加到形成在基板上的叉指式换能器(IDT,Interdigital Transducer)的梳状电极来激励声波。表面声波组件广泛地用于对例如45MHz到2GHz的带宽内的无线电信号进行处理的各种电路。这些电路的例子有用于发送的带通滤波器、用于接收的带通滤波器(band pass filter)、本地端振荡滤波器、天线双工器(duplexer)、中频滤波器以及调频调变器(FM,FrequencyModulation)。A surface acoustic wave component (SAW) can excite sound waves by applying power to comb electrodes of an interdigital transducer (IDT) formed on a substrate. Surface acoustic wave components are widely used in various circuits that process radio signals within a bandwidth of, for example, 45 MHz to 2 GHz. Examples of these circuits are band pass filters for transmission, band pass filters for reception, local side oscillator filters, antenna duplexers, IF filters, and FM modulators ( FM, FrequencyModulation).
表面声波组件需要位于由梳状电极组成的声波组件的功能部件,例如叉指式换能器的电极指,上方的空腔以确保表面声波组件的性能。常规的表面声波器件采用具有其中安装有表面声波组件的凹槽的陶瓷接合以在表面声波组件与设置在陶瓷封装上的内联机之间构成电性连接。Surface acoustic wave components require a cavity located above the functional components of the sonic component consisting of comb electrodes, such as the electrode fingers of an interdigital transducer, to ensure the performance of the surface acoustic wave component. Conventional surface acoustic wave devices use ceramic joints with grooves in which surface acoustic wave components are mounted to establish electrical connections between the surface acoustic wave components and interconnects disposed on ceramic packages.
然而,在引线接合的制程中使用了导线,但是会妨碍表面声波器件尺寸的缩小。为了减小表面声波器件的尺寸,则是进一步的开发了倒装式接合(flip-chip bonding)。由于倒装式接合不使用导线进行安装,因而实现了表面声波器件尺寸的减小。However, the use of wires in the wire bonding process hinders the size reduction of surface acoustic wave devices. In order to reduce the size of surface acoustic wave devices, flip-chip bonding was further developed. Because flip-chip bonding does not use wires for mounting, surface acoustic wave device size reduction is achieved.
近年来,已经对于减小表面声波器件尺寸有了更严格的要求。在某些情况下,甚至于倒装式接合也不能实现所需的缩小尺寸。于是又提出了将表面声波组件设置在基板上,而基板的表面上设置有覆盖层,以在表面声波组件的功能部件的上方限定空腔,上述的覆盖层则做为封装体。此类型的封装被称为芯片级封装(WLP,wafer level package),此种封装方式则实现了将表面声波组件的体积小型化。In recent years, there have been stricter requirements for reducing the size of surface acoustic wave devices. In some cases, even flip-chip bonding cannot achieve the desired size reduction. Therefore, it is proposed to arrange the surface acoustic wave component on a substrate, and a covering layer is provided on the surface of the substrate to define a cavity above the functional components of the surface acoustic wave component. The above-mentioned covering layer serves as a package. This type of packaging is called a chip-level package (WLP, wafer level package), and this packaging method enables the miniaturization of surface acoustic wave components.
发明内容Contents of the invention
本发明主要目的是提供一种声波组件,在焊垫上形成导体层以增加凸块与焊垫之间的强度,以解决当声波组件以倒装方式进行封装时,凸块因应力而断裂时会连带将焊垫一并由基板上拔起,而造成整个封装结构毁损的问题。The main purpose of the present invention is to provide an acoustic wave component in which a conductor layer is formed on the soldering pad to increase the strength between the bump and the soldering pad, so as to solve the problem of the bumps breaking due to stress when the acoustic wave component is packaged in a flip-chip manner. The soldering pads are also pulled up from the substrate, causing damage to the entire package structure.
本发明的另一目的在于提供一种声波组件,增加设计可行性,增加电源凸块或接地凸块,提升电气性能。Another object of the present invention is to provide an acoustic wave component that increases design feasibility, adds power bumps or ground bumps, and improves electrical performance.
根据上述目的,本发明披露一种声波组件,包括:基板,具有上表面及下表面,于上表面的周边上设有多个焊垫;至少一个电子组件,设置在基板的上表面,使得在基板的上表面的周边的多个焊垫环绕电子组件;盖体结构,设置在具有电子组件的基板的上方,且盖体结构与基板之间的空间定义为封闭式空腔,使电子组件设置在此封闭式空腔内;第一保护层,覆盖在基板的部分上表面及覆盖在多个焊垫的部分表面上,且暴露出未被第一保护层覆盖的多个焊垫的部分表面;导体层设置在第一保护层的部分表面、未被第一保护层覆盖的多个焊垫的部分表面、盖体结构的外侧表面及盖体结构的部分上表面;以及多个凸块,设置在位于盖体结构的上表面的导体层上。According to the above object, the present invention discloses an acoustic wave component, which includes: a substrate having an upper surface and a lower surface, with a plurality of soldering pads provided on the periphery of the upper surface; and at least one electronic component disposed on the upper surface of the substrate so that A plurality of soldering pads around the upper surface of the substrate surround the electronic components; the cover structure is arranged above the substrate with the electronic components, and the space between the cover structure and the substrate is defined as a closed cavity, allowing the electronic components to be placed In this closed cavity, the first protective layer covers part of the upper surface of the substrate and part of the surfaces of the plurality of soldering pads, and exposes part of the surfaces of the plurality of soldering pads that are not covered by the first protective layer. ; The conductor layer is provided on part of the surface of the first protective layer, part of the surfaces of the plurality of pads not covered by the first protective layer, the outer surface of the cover structure and part of the upper surface of the cover structure; and a plurality of bumps, Disposed on the conductor layer located on the upper surface of the cover structure.
在本发明较优选的实施例中,盖体结构由基板往上依序包括:部分第二保护层覆盖邻近于电子组件的多个焊垫的部分表面,并设置在邻近于电子组件的基板的上表面;第一绝缘层,设置在第二保护层的部分表面上,且第二保护层及第一绝缘层未遮盖在基板上的电子组件;以及第二绝缘层,覆盖在第一绝缘层的部分表面上,使得第二保护层及第一绝缘层所构成的结构定义为盖体结构的侧面墙体及第二绝缘层为盖体结构的顶面墙体。In a more preferred embodiment of the present invention, the cover structure includes in order from the substrate upward: a part of the second protective layer covers part of the surface of the plurality of solder pads adjacent to the electronic component, and is disposed on the substrate adjacent to the electronic component. upper surface; a first insulating layer disposed on part of the surface of the second protective layer, and the second protective layer and the first insulating layer do not cover the electronic components on the substrate; and a second insulating layer covering the first insulating layer On part of the surface, the structure composed of the second protective layer and the first insulating layer is defined as the side wall of the cover structure and the second insulating layer is defined as the top wall of the cover structure.
在本发明较优选的实施例中,盖体结构由基板往上依序包括:部分第二保护层覆盖邻近于电子组件的多个焊垫的部分表面及部分第二保护层设置在邻近于电子组件的基板的上表面;第一绝缘层,设置在第二保护层的部分表面及覆盖多个焊垫的部分表面以暴露出未被第一绝缘层覆盖的多个焊垫的部分表面,且第二保护层及第一绝缘层未遮盖在基板上的电子组件;以及第二绝缘层,覆盖在第一绝缘层的部分表面上,使得第二保护层及第一绝缘层所构成的结构定义为盖体结构的侧面墙体及第二绝缘层为盖体结构的顶面墙体。In a more preferred embodiment of the present invention, the cover structure includes in order from the substrate upward: a part of the second protective layer covering part of the surface of the plurality of solder pads adjacent to the electronic component, and a part of the second protective layer is disposed adjacent to the electronic component. the upper surface of the substrate of the component; the first insulating layer is disposed on part of the surface of the second protective layer and covers part of the surface of the plurality of soldering pads to expose part of the surface of the plurality of soldering pads that are not covered by the first insulating layer, and The second protective layer and the first insulating layer do not cover the electronic components on the substrate; and the second insulating layer covers part of the surface of the first insulating layer, so that the structure formed by the second protective layer and the first insulating layer defines The side walls are the cover structure and the second insulation layer is the top wall of the cover structure.
根据上述目的,本发明还披露另一种声波组件,包括:基板具有上表面及下表面,于上表面的周边上设有多个焊垫;至少一个电子组件,设置在基板的上表面,使得在基板的上表面的周边的多个焊垫环绕电子组件;盖体结构,设置在具有电子组件的基板的上方,且盖体结构与基板之间的空间定义为封闭式空腔,使得电子组件设置在封闭式空腔内;第一保护层,覆盖在基板的部分上表面及覆盖在多个焊垫的部分表面上;第一绝缘层,设置在第一保护层的部分表面且覆盖多个焊垫的部分该表面以暴露出未被第一保护层覆盖的多个焊垫的部分表面;导体层,覆盖在第一绝缘层的部分表面、未被第一保护层覆盖的多个焊垫的部分表面、盖体结构的外侧表面及盖体结构的部分上表面;以及多个凸块,设置在位于盖体结构的上表面的导体层上。According to the above object, the present invention also discloses another acoustic wave component, including: a substrate having an upper surface and a lower surface, with a plurality of soldering pads provided on the periphery of the upper surface; and at least one electronic component disposed on the upper surface of the substrate, so that A plurality of soldering pads around the upper surface of the substrate surround the electronic components; the cover structure is disposed above the substrate with the electronic components, and the space between the cover structure and the substrate is defined as a closed cavity, so that the electronic components is disposed in a closed cavity; a first protective layer covers part of the upper surface of the substrate and a part of the surface of the plurality of soldering pads; a first insulating layer is provided on part of the surface of the first protective layer and covers a plurality of soldering pads Part of the surface of the soldering pad is to expose part of the surface of the multiple soldering pads that are not covered by the first protective layer; the conductor layer is covering part of the surface of the first insulating layer and is not covered by the first protective layer. A portion of the surface, an outer surface of the cover structure, and a portion of the upper surface of the cover structure; and a plurality of bumps disposed on the conductor layer located on the upper surface of the cover structure.
在本发明较优选的实施例中,盖体结构的第二绝缘层及第一绝缘层呈阶梯结构。In a more preferred embodiment of the present invention, the second insulating layer and the first insulating layer of the cover structure have a stepped structure.
在本发明较优选的实施例中,设置在第一保护层的部分表面且覆盖多个焊垫的部分表面上的第一绝缘层的高度与盖体结构的第一绝缘层的高度相同。In a more preferred embodiment of the present invention, the height of the first insulating layer disposed on part of the surface of the first protective layer and covering the plurality of bonding pads is the same as the height of the first insulating layer of the cover structure.
在本发明较优选的实施例中,导体层由凸块下金属层(UBM,under ballmetallurgy)及重布线层(RDL,redistribution layer)构成,其中重布线层设置在凸块下金属层上。In a more preferred embodiment of the present invention, the conductor layer is composed of an under ball metallurgy (UBM) and a redistribution layer (RDL), where the redistribution layer is disposed on the under ball metal layer.
在本发明较优选的实施例中,电子组件可以是滤波器、振荡器或是传感器。In a preferred embodiment of the present invention, the electronic component may be a filter, an oscillator or a sensor.
在本发明较优选的实施例中,凸块可以是铜柱凸块、铜柱或是C4凸块。In a preferred embodiment of the present invention, the bumps may be copper pillar bumps, copper pillars or C4 bumps.
附图说明Description of the drawings
图1是根据本发明所披露的技术,表示声波组件的一实施例的截面示意图。FIG. 1 is a schematic cross-sectional view showing an embodiment of an acoustic wave component according to the technology disclosed in the present invention.
图2是根据本发明所披露的技术,表示声波组件的另一实施例的截面示意图。2 is a schematic cross-sectional view showing another embodiment of an acoustic wave assembly according to the technology disclosed in the present invention.
图3是根据本发明所披露的技术,表示声波组件的又一实施例的截面示意图。FIG. 3 is a schematic cross-sectional view showing yet another embodiment of an acoustic wave assembly according to the technology disclosed in the present invention.
具体实施方式Detailed ways
为了使本发明的目的、技术特征及优点,能更为相关技术领域人员所了解,并得以实施本发明,在此配合所附的图式、具体阐明本发明的技术特征与实施方式,并列举较佳实施例进一步说明。以下文中所对照的图式,为表达与本发明特征有关的示意,并未亦不需要依据实际情形完整绘制。而关于本案实施方式的说明中涉及本领域技术人员所熟知的技术内容,亦不再加以陈述。In order to enable those in the relevant technical field to better understand the purpose, technical features and advantages of the present invention and implement the present invention, the technical features and implementation modes of the present invention are specifically explained and enumerated in conjunction with the attached drawings. Preferred embodiments are further described. The drawings contrasted below are schematic representations related to the features of the present invention, and are not and need not be completely drawn based on the actual situation. The description of the implementation mode of this case involves technical contents that are well known to those skilled in the art and will not be described again.
首先请参考图1。图1是根据本发明所披露的技术,表示声波组件的一实施例的截面示意图。在图1中,声波组件1由基板10、电子组件20、盖体结构30a、第一保护层40、导体层50a及多个凸块60所构成。其中,基板10具有上表面102及下表面104,且于上表面102的周边设有多个焊垫106。于一实施例中,基板10由压电材料所制成,例如石英(quartz)、钽酸锂(LT,LiTaO3)、钛酸铅(PTO,PbTiO3)或是锆钛酸铅(PZT,Pb(Zr,Ti)O3)。焊垫106可以是铝垫。电子组件20,设置在基板10的上表面102,使得在基板10的上表面102的周边的多个焊垫106环绕电子组件20。在本发明的实施例中,电子组件20可以是滤波器(filter)、振荡器或是传感器。First please refer to Figure 1. FIG. 1 is a schematic cross-sectional view showing an embodiment of an acoustic wave component according to the technology disclosed in the present invention. In FIG. 1 , the acoustic wave component 1 is composed of a substrate 10 , an electronic component 20 , a cover structure 30 a , a first protective layer 40 , a conductor layer 50 a and a plurality of bumps 60 . The substrate 10 has an upper surface 102 and a lower surface 104, and a plurality of bonding pads 106 are provided around the upper surface 102. In one embodiment, the substrate 10 is made of piezoelectric material, such as quartz, lithium tantalate (LT, LiTaO 3 ), lead titanate (PTO, PbTiO 3 ) or lead zirconate titanate (PZT, Pb(Zr,Ti)O 3 ). Bonding pad 106 may be an aluminum pad. The electronic component 20 is disposed on the upper surface 102 of the substrate 10 so that a plurality of soldering pads 106 around the upper surface 102 of the substrate 10 surround the electronic component 20 . In the embodiment of the present invention, the electronic component 20 may be a filter, an oscillator or a sensor.
接着请继续参考图1。在具有电子组件20的基板10的上方设有盖体结构30a,此盖体结构30a与基板10之间的空间可定义为封闭式空腔32a,因此在基板10的上表面102的电子组件20设置在此封闭式空腔32a内。盖体结构30a可以防止外在环境中的水气进入封闭式空腔32a内,经由盖体结构30a来增加电子组件20的使用寿命及整个声波组件1的可靠性。Please continue to refer to Figure 1. A cover structure 30a is provided above the substrate 10 with the electronic component 20. The space between the cover structure 30a and the substrate 10 can be defined as a closed cavity 32a. Therefore, the electronic component 20 on the upper surface 102 of the substrate 10 It is arranged in this closed cavity 32a. The cover structure 30a can prevent moisture in the external environment from entering the closed cavity 32a, thereby increasing the service life of the electronic component 20 and the reliability of the entire sonic component 1 through the cover structure 30a.
在本发明的一实施例中,盖体结构30a由基板10往上依序包括:第二保护层302a、第一绝缘层304a及第二绝缘层306a,其中,第二保护层302a覆盖邻近于电子组件20的多个焊垫106的部分表面及第二保护层302a设置在邻近于电子组件20的基板10的部分上表面102。第一绝缘层304a设置在第二保护层302a的部分表面,且在基板10上方的第二保护层302a及第一绝缘层304a未遮盖在基板10上的电子组件20。第二绝缘层306a覆盖在第一绝缘层304a的部分表面上,使得第二保护层302a及第一绝缘层304a所构成的结构可以定义为盖体结构30a的侧面墙体及第二绝缘层306a为盖体结构30a的顶面墙体。于一实施例中,盖体结构30a中的第二绝缘层306a与第一绝缘层304a呈阶梯结构。In an embodiment of the present invention, the cover structure 30a includes: a second protective layer 302a, a first insulating layer 304a and a second insulating layer 306a in order from the substrate 10 upward, wherein the second protective layer 302a covers adjacent areas Partial surfaces of the plurality of bonding pads 106 of the electronic component 20 and the second protective layer 302 a are disposed on a part of the upper surface 102 of the substrate 10 adjacent to the electronic component 20 . The first insulating layer 304a is disposed on part of the surface of the second protective layer 302a, and the second protective layer 302a and the first insulating layer 304a above the substrate 10 do not cover the electronic component 20 on the substrate 10. The second insulating layer 306a covers part of the surface of the first insulating layer 304a, so that the structure composed of the second protective layer 302a and the first insulating layer 304a can be defined as the side walls of the cover structure 30a and the second insulating layer 306a. It is the top wall of the cover structure 30a. In one embodiment, the second insulating layer 306a and the first insulating layer 304a in the cover structure 30a have a stepped structure.
同样请继续参考图1。声波组件1还包括第一保护层40,同时覆盖在基板10的部分上表面102及多个焊垫106的部分表面上,且将多个焊垫106的其他部分表面暴露出来,也就是未被第一保护层40覆盖的多个焊垫106的部分表面。要说明的是,覆盖在基板10的部分上表面102及覆盖在多个焊垫106的部分表面上,且将多个焊垫106的其他部分表面暴露出来的第一保护层40与盖体结构30a中的第二保护层302a是同时利用半导体制程所形成。接着,导体层50a覆盖在第一保护层40的部分表面、未被第一保护层40覆盖的多个焊垫106的部分表面及在盖体结构30a的外侧表面34a及盖体结构30a的部分上表面36a。于一实施例中,导体层50a由凸块下金属层(UBM,under bump metallurgy)502a及重布线层(RDL,redistribution layer)504a所构成,其中重布线层504a设置在凸块下金属层502a上。具体来说,作为导体层50a的凸块下金属层502a覆盖在第一保护层40的部分表面、未被第一保护层40覆盖的多个焊垫106的部分表面、盖体结构30a的外侧表面34a及盖体结构30a的部分上表面36a,接着,再将作为导体层50a的重布线层504a设置在凸块下金属层502a上。最后,将多个凸块60设置在覆盖于盖体结构30a的上表面36a的导体层50a以完成声波组件1,于一实施例中,凸块60可以是铜柱凸块(Copper Pillar Bump)、铜柱或是C4凸块。此外要说明的是,在本发明中的声波组件1的形成方式均是利用现有的半导体制程技术,其制程流程及构成声波组件1的材料并不在本发明所要讨论的技术方案中,故不多加陈述。Please continue to refer to Figure 1 as well. The acoustic wave component 1 also includes a first protective layer 40, which simultaneously covers part of the upper surface 102 of the substrate 10 and part of the surfaces of the plurality of solder pads 106, and exposes other parts of the surfaces of the plurality of solder pads 106, that is, is not exposed. The first protective layer 40 covers part of the surfaces of the plurality of bonding pads 106 . It should be noted that the first protective layer 40 and the cover structure cover part of the upper surface 102 of the substrate 10 and part of the surface of the plurality of soldering pads 106, and expose other parts of the surfaces of the plurality of soldering pads 106. The second protective layer 302a in 30a is formed simultaneously using a semiconductor process. Next, the conductor layer 50a covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and the outer surface 34a of the cover structure 30a and the part of the cover structure 30a. Upper surface 36a. In one embodiment, the conductor layer 50a is composed of an under bump metallurgy (UBM) 502a and a redistribution layer (RDL) 504a, where the redistribution layer 504a is disposed on the under bump metallurgy 502a superior. Specifically, the under-bump metal layer 502a as the conductor layer 50a covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and the outside of the cover structure 30a. The surface 34a and part of the upper surface 36a of the cover structure 30a are then disposed on the under-bump metal layer 502a as the redistribution layer 504a as the conductor layer 50a. Finally, a plurality of bumps 60 are disposed on the conductor layer 50a covering the upper surface 36a of the cover structure 30a to complete the acoustic wave component 1. In one embodiment, the bumps 60 may be copper pillar bumps (Copper Pillar Bump). , copper pillars or C4 bumps. In addition, it should be noted that the acoustic wave component 1 in the present invention is formed by using existing semiconductor process technology. The process flow and the materials constituting the acoustic wave component 1 are not included in the technical solution to be discussed in the present invention, so they are not included in the technical solutions discussed in the present invention. Make more statements.
接着,本发明还披露另一种声波组件,如图2所示。图2是根据本发明所揭露的技术,表示声波组件的另一实施例的截面示意图。在图2中,声波组件2由基板10、电子组件20、盖体结构30b、第一保护层40、导体层50b及多个凸块60所构成。基板10具有上表面102及下表面104,且于上表面102的周边设有多个焊垫106。基板10、焊垫106及电子组件20的材料与前述相同不再多加陈述。电子组件20设置在基板10的上表面102,使得在基板10的上表面102的周边的多个焊垫106环绕电子组件20。Next, the present invention also discloses another acoustic wave component, as shown in FIG. 2 . FIG. 2 is a schematic cross-sectional view showing another embodiment of an acoustic wave component according to the technology disclosed in the present invention. In FIG. 2 , the acoustic wave component 2 is composed of a substrate 10 , an electronic component 20 , a cover structure 30 b , a first protective layer 40 , a conductor layer 50 b and a plurality of bumps 60 . The substrate 10 has an upper surface 102 and a lower surface 104, and a plurality of bonding pads 106 are provided around the upper surface 102. The materials of the substrate 10 , the bonding pads 106 and the electronic components 20 are the same as those mentioned above and will not be further described. The electronic component 20 is disposed on the upper surface 102 of the substrate 10 such that the plurality of bonding pads 106 at the periphery of the upper surface 102 of the substrate 10 surround the electronic component 20 .
接着请继续参考图2。在具有电子组件20的基板10的上方设有盖体结构30b,此盖体结构30b与基板10之间的空间可定义为封闭式空腔32b,因此在基板10的上表面102的电子组件20设置在此封闭式空腔32b内。盖体结构30b可以防止外在环境中的水气进入封闭式空腔32b内,经由盖体结构30b来增加电子组件20的使用寿命及整个声波组件2的可靠性。Please continue to refer to Figure 2. A cover structure 30b is provided above the substrate 10 with the electronic component 20. The space between the cover structure 30b and the substrate 10 can be defined as a closed cavity 32b. Therefore, the electronic component 20 on the upper surface 102 of the substrate 10 It is arranged in this closed cavity 32b. The cover structure 30b can prevent moisture in the external environment from entering the closed cavity 32b, thereby increasing the service life of the electronic component 20 and the reliability of the entire sonic component 2 through the cover structure 30b.
在本发明的另一实施例中,盖体结构30b由基板10往上依序包括:第二保护层302b、第一绝缘层304b及第二绝缘层306b,其中,第二保护层302b覆盖邻近于电子组件20的多个焊垫106的部分表面及第二保护层302b设置在邻近于电子组件20的基板10的部分上表面102。第一绝缘层304b设置在第二保护层302b的部分表面及覆盖于多个焊垫106的部分表面,且在基板10上方的第二保护层302b及第一绝缘层304b未遮盖在基板10上的电子组件20。第二绝缘层306b覆盖在第一绝缘层304b的部分表面上,使得第二保护层302b及第一绝缘层304b所构成的结构定义为盖体结构30b的侧面墙体及第二绝缘层306b为盖体结构30b的顶面墙体。同样的,于一实施例中,盖体结构30b中的第二绝缘层306b与第一绝缘层304b呈阶梯结构。In another embodiment of the present invention, the cover structure 30b sequentially includes: a second protective layer 302b, a first insulating layer 304b and a second insulating layer 306b from the substrate 10 upward, wherein the second protective layer 302b covers adjacent A portion of the surface of the plurality of bonding pads 106 of the electronic component 20 and the second protective layer 302b are disposed on a portion of the upper surface 102 of the substrate 10 adjacent to the electronic component 20 . The first insulating layer 304b is disposed on part of the surface of the second protective layer 302b and covers part of the plurality of bonding pads 106, and the second protective layer 302b and the first insulating layer 304b above the substrate 10 are not covered on the substrate 10. electronic components 20. The second insulating layer 306b covers part of the surface of the first insulating layer 304b, so that the structure composed of the second protective layer 302b and the first insulating layer 304b is defined as the side wall of the cover structure 30b and the second insulating layer 306b. The top wall of the cover structure 30b. Similarly, in one embodiment, the second insulating layer 306b and the first insulating layer 304b in the cover structure 30b have a stepped structure.
请继续参考图2。声波组件2还包括第一保护层40,同时覆盖在基板10的部分上表面102及多个焊垫106的部分表面上,且将多个焊垫106的其他部分表面暴露出来也就是未被第一保护层40覆盖的多个焊垫106的部分表面。要说明的是,覆盖在基板10的部分上表面102及覆盖在多个焊垫106的部分表面上,且将多个焊垫106的其他部分表面暴露出来的第一保护层40与盖体结构30b中的第二保护层302b是同时利用半导体制程所形成。接着,导体层50b覆盖在第一保护层40的部分表面、未被第一保护层40覆盖的多个焊垫106的部分表面及在盖体结构30b的外侧表面34b及盖体结构30b的部分上表面36b。于一实施例中,导体层50b由凸块下金属层502b及重布线层504b所构成,其中重布线层504b设置在凸块下金属层502b上。具体来说,作为导体层50b的凸块下金属层502b覆盖在第一保护层40的部分表面、未被第一保护层40覆盖的多个焊垫106的部分表面、盖体结构30b的外侧表面34b及盖体结构30b的部分上表面36b,接着,再将作为导体层50b的重布线层504b设置在凸块下金属层502b上。最后,将多个凸块60设置在覆盖于盖体结构30b的上表面36b的导体层50b以完成声波组件2。于一实施例中,凸块60可以是铜柱凸块、铜柱或是C4凸块。。此外要说明的是,在本发明中的声波组件2的形成方式均是利用现有的半导体制程技术,其制程流程及构成声波组件10的材料并不在本发明所要讨论的技术方案中,故不多加陈述。Please continue to refer to Figure 2. The acoustic wave component 2 also includes a first protective layer 40, which simultaneously covers part of the upper surface 102 of the substrate 10 and part of the surfaces of the plurality of solder pads 106, and exposes other parts of the surfaces of the plurality of solder pads 106, that is, is not exposed to the second protective layer 40. A protective layer 40 covers part of the surface of the plurality of bonding pads 106 . It should be noted that the first protective layer 40 and the cover structure cover part of the upper surface 102 of the substrate 10 and part of the surface of the plurality of soldering pads 106, and expose other parts of the surfaces of the plurality of soldering pads 106. The second protective layer 302b in 30b is formed simultaneously using a semiconductor process. Next, the conductor layer 50b covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and the outer surface 34b of the cover structure 30b and the part of the cover structure 30b. Upper surface 36b. In one embodiment, the conductor layer 50b is composed of an under-bump metal layer 502b and a redistribution layer 504b, wherein the redistribution layer 504b is disposed on the under-bump metal layer 502b. Specifically, the under-bump metal layer 502b as the conductor layer 50b covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and the outside of the cover structure 30b. The surface 34b and part of the upper surface 36b of the cover structure 30b are then disposed on the under-bump metal layer 502b as the redistribution layer 504b as the conductor layer 50b. Finally, a plurality of bumps 60 are disposed on the conductor layer 50b covering the upper surface 36b of the cover structure 30b to complete the acoustic wave component 2. In one embodiment, the bumps 60 may be copper pillar bumps, copper pillars or C4 bumps. . In addition, it should be noted that the acoustic wave component 2 in the present invention is formed by using existing semiconductor process technology. The process flow and the materials constituting the acoustic wave component 10 are not included in the technical solution to be discussed in the present invention, so they are not included in the technical solutions discussed in the present invention. Make more statements.
此外,本发明再揭露一种声波组件,如图3所示。图3是根据本发明所披露的技术,表示声波组件的再一实施例的截面示意图。在图3中,声波组件2由基板10、电子组件20、盖体结构30c、第一保护层40、导体层50c及多个凸块60所构成。基板10具有上表面102及下表面104,且于上表面102的周边设有多个焊垫106。基板10、焊垫106及电子组件20的材料与前述相同不再多加陈述。电子组件20设置在基板10的上表面102,使得在基板10的上表面102的周边的多个焊垫106环绕电子组件20。In addition, the present invention discloses an acoustic wave component, as shown in FIG. 3 . 3 is a schematic cross-sectional view showing yet another embodiment of an acoustic wave assembly according to the technology disclosed in the present invention. In FIG. 3 , the acoustic wave component 2 is composed of a substrate 10 , an electronic component 20 , a cover structure 30 c , a first protective layer 40 , a conductor layer 50 c and a plurality of bumps 60 . The substrate 10 has an upper surface 102 and a lower surface 104, and a plurality of bonding pads 106 are provided around the upper surface 102. The materials of the substrate 10 , the bonding pads 106 and the electronic components 20 are the same as those mentioned above and will not be further described. The electronic component 20 is disposed on the upper surface 102 of the substrate 10 such that the plurality of bonding pads 106 at the periphery of the upper surface 102 of the substrate 10 surround the electronic component 20 .
接着请继续参考图3。在具有电子组件20的基板10的上方设有盖体结构30c,此盖体结构30c与基板10之间的空间可定义为封闭式空腔32c,因此在基板10的上表面102的电子组件20设置在此封闭式空腔32c内。盖体结构30c可以防止外在环境中的水气进入封闭式空腔32c内,经由盖体结构30c来增加电子组件20的使用寿命及整个声波组件3的可靠性。Please continue to refer to Figure 3. A cover structure 30c is provided above the substrate 10 with the electronic component 20. The space between the cover structure 30c and the substrate 10 can be defined as a closed cavity 32c. Therefore, the electronic component 20 on the upper surface 102 of the substrate 10 It is arranged in this closed cavity 32c. The cover structure 30c can prevent moisture in the external environment from entering the closed cavity 32c, thereby increasing the service life of the electronic component 20 and the reliability of the entire sonic component 3 through the cover structure 30c.
在本发明的另一实施例中,盖体结构30c由基板10往上依序包括:第二保护层302c、第一绝缘层304c及第二绝缘层306c,其中,第二保护层302c覆盖邻近于电子组件20的多个焊垫106的部分表面及第二保护层302c设置在邻近于电子组件20的基板10的部分上表面102。第一绝缘层304c设置在第二保护层302c的部分表面及覆盖于多个焊垫106的部分表面,且在基板10上方的第二保护层302c及第一绝缘层304c未遮盖在基板10上的电子组件20。第二绝缘层306c覆盖在第一绝缘层304c的部分表面上,使得第二保护层302c及第一绝缘层304c所构成的结构定义为盖体结构30c的侧面墙体及第二绝缘层306b为盖体结构30c的顶面墙体。同样的,于一实施例中,盖体结构30c中的第二绝缘层306c与第一绝缘层304c呈阶梯结构。In another embodiment of the present invention, the cover structure 30c includes: a second protective layer 302c, a first insulating layer 304c and a second insulating layer 306c in order from the substrate 10 upward, wherein the second protective layer 302c covers adjacent A portion of the surface of the plurality of bonding pads 106 of the electronic component 20 and the second protective layer 302c are disposed on a portion of the upper surface 102 of the substrate 10 adjacent to the electronic component 20 . The first insulating layer 304c is disposed on part of the surface of the second protective layer 302c and covers part of the surfaces of the plurality of bonding pads 106, and the second protective layer 302c and the first insulating layer 304c above the substrate 10 are not covered on the substrate 10 electronic components 20. The second insulating layer 306c covers part of the surface of the first insulating layer 304c, so that the structure composed of the second protective layer 302c and the first insulating layer 304c is defined as the side wall of the cover structure 30c and the second insulating layer 306b. The top wall of the cover structure 30c. Similarly, in one embodiment, the second insulating layer 306c and the first insulating layer 304c in the cover structure 30c have a stepped structure.
请继续参考图3。声波组件3还包括第一保护层40,同时覆盖在基板10的部分上表面102及覆盖在多个焊垫106的部分表面上,且将多个焊垫106的其他部分表面暴露出来也就是未被第一保护层40覆盖的多个焊垫106的部分表面。要说明的是,覆盖在基板10的部分上表面102及覆盖在多个焊垫106的部分表面上,且将多个焊垫106的其他部分表面暴露出来的第一保护层40与盖体结构30c中的第二保护层302c是同时利用半导体制程所形成。接着,第一绝缘层304c设置在第一保护层40的部分表面且覆盖多个焊垫106的部分表面,以暴露出未被第一保护层40覆盖的多个焊垫106的部分表面。要说明的是,设置在第一保护层40的部分表面、且覆盖在多个焊垫106的部分表面上的第一绝缘层304c与盖体结构30c中的第一绝缘层304c是利用相同的半导体制程同时形成,且两者具有相同的高度。Please continue to refer to Figure 3. The acoustic wave component 3 also includes a first protective layer 40 that covers part of the upper surface 102 of the substrate 10 and part of the surfaces of the plurality of soldering pads 106, and exposes other parts of the surfaces of the plurality of soldering pads 106. Partial surfaces of the plurality of bonding pads 106 are covered by the first protective layer 40 . It should be noted that the first protective layer 40 and the cover structure cover part of the upper surface 102 of the substrate 10 and part of the surface of the plurality of soldering pads 106, and expose other parts of the surfaces of the plurality of soldering pads 106. The second protective layer 302c in 30c is formed simultaneously using a semiconductor process. Next, the first insulating layer 304c is disposed on part of the surface of the first protective layer 40 and covers part of the surfaces of the plurality of soldering pads 106 to expose part of the surfaces of the plurality of soldering pads 106 that are not covered by the first protective layer 40 . It should be noted that the first insulating layer 304c disposed on part of the surface of the first protective layer 40 and covering part of the surfaces of the plurality of bonding pads 106 is made of the same material as the first insulating layer 304c in the cover structure 30c. Semiconductor processes are formed simultaneously, and both have the same height.
接着,将导体层50c覆盖在第一绝缘层304c的部分表面、未被第一保护层40覆盖的多个焊垫10的部分表面、盖体结构30c的外侧表面34c及盖体结构30c的部分上表面36c。于一实施例中,导体层50c由凸块下金属层)502c及重布线层504c所构成,其中重布线层504c设置在凸块下金属层502c上。具体来说,先将导体层50c的凸块下金属层502c形成在第一绝缘层304c的部分表面、未被第一保护层40覆盖的多个焊垫106的部分表面、盖体结构30c的外侧表面34c及盖体结构30c的部分上表面36c,接着,再将导体层5c0的重布线层504c设置在凸块下金属层502c上。最后,将多个凸块60设置在覆盖于盖体结构30c的上表面36c的导体层50c以完成声波组件3,于一实施例中,凸块60可以是铜柱凸块、铜柱或是C4凸块。Next, the conductor layer 50c is covered on part of the surface of the first insulating layer 304c, part of the surfaces of the plurality of bonding pads 10 that are not covered by the first protective layer 40, the outer surface 34c of the cover structure 30c and part of the cover structure 30c. Upper surface 36c. In one embodiment, the conductor layer 50c is composed of an under-bump metal layer 502c and a redistribution layer 504c, where the redistribution layer 504c is disposed on the under-bump metal layer 502c. Specifically, the under-bump metal layer 502c of the conductor layer 50c is first formed on part of the surface of the first insulating layer 304c, part of the surface of the plurality of bonding pads 106 not covered by the first protective layer 40, and part of the cover structure 30c. The outer surface 34c and part of the upper surface 36c of the cover structure 30c are then disposed on the redistribution layer 504c of the conductor layer 5c0 on the under-bump metal layer 502c. Finally, a plurality of bumps 60 are disposed on the conductor layer 50c covering the upper surface 36c of the cover structure 30c to complete the acoustic wave component 3. In one embodiment, the bumps 60 can be copper pillar bumps, copper pillars or C4 bump.
综上所述,根据本发明所披露的声波组件1、2、3,在后续的倒装芯片的组装过程中,于模流制程时利用导体层50a、50b、50c以增加凸块60与焊垫106之间的强度,以解决当声波组件1、2、3以倒装方式进行封装时,凸块60因应力而断裂时会连带将焊垫106一并由基板10上拔起,而造成整个封装结构毁损的问题。另外,如上述图1及图2中的盖体结构30a、30b及如图3中的盖体结构30c及设置在第一保护层40的部分表面且覆盖多个焊垫106的部分表面的第一绝缘层304c可以阻隔外在环境的水气进入空腔32a、32b、32c以增加声波组件1、2、3整体在操作时的可靠度。In summary, according to the acoustic wave components 1, 2, and 3 disclosed in the present invention, in the subsequent flip-chip assembly process, the conductor layers 50a, 50b, and 50c are used to add bumps 60 and solder joints during the mold flow process. The strength between the pads 106 is to solve the problem that when the acoustic wave components 1, 2, and 3 are packaged in a flip-chip manner, when the bumps 60 break due to stress, the soldering pads 106 will be pulled up from the substrate 10 together, causing The entire packaging structure is damaged. In addition, the cover structures 30a and 30b in FIGS. 1 and 2 and the cover structure 30c in FIG. 3 are disposed on part of the surface of the first protective layer 40 and cover part of the surface of the plurality of bonding pads 106 . An insulating layer 304c can block moisture from the external environment from entering the cavities 32a, 32b, and 32c to increase the overall reliability of the sonic components 1, 2, and 3 during operation.
以上所述仅为本发明之较佳实施例,并非用以限定本发明之权利范围;同时以上的描述,对于相关技术领域之专门人士应可明了及实施,因此其他未脱离本发明所揭示之精神下所完成的等效改变或修饰,均应包含在申请专利范围中。The above descriptions are only preferred embodiments of the present invention and are not intended to limit the scope of rights of the present invention. At the same time, the above descriptions should be understood and implemented by those skilled in the relevant technical fields. Therefore, other aspects do not deviate from the disclosure of the present invention. Equivalent changes or modifications made in the spirit of the invention shall be included in the scope of the patent application.
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