CN116805586B - Conductive particle removal method and system - Google Patents
Conductive particle removal method and system Download PDFInfo
- Publication number
- CN116805586B CN116805586B CN202310078222.4A CN202310078222A CN116805586B CN 116805586 B CN116805586 B CN 116805586B CN 202310078222 A CN202310078222 A CN 202310078222A CN 116805586 B CN116805586 B CN 116805586B
- Authority
- CN
- China
- Prior art keywords
- wafer
- electrostatic chuck
- conductive
- particles
- conductive particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002245 particle Substances 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000001179 sorption measurement Methods 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000002699 waste material Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 22
- 235000012431 wafers Nutrition 0.000 description 136
- 238000010586 diagram Methods 0.000 description 20
- 238000012986 modification Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000004075 alteration Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application provides a method and a system for removing conductive particles. The method comprises the following steps: moving the electrostatic chuck in a direction approaching the wafer; and adsorbing the conductive particles on the wafer by using the electrostatic chuck, so as to remove the conductive particles on the wafer. According to the embodiment of the application, the electrostatic chuck is adopted to remove the conductive particles generated in the wafer stretching process or after the wafer processing is finished, so that the influence of the conductive particles on the wafer is avoided, and the yield is improved.
Description
Technical Field
The embodiment of the application relates to the field of wafer processing, in particular to a method and a system for removing conductive particles generated by wafer processing or long-standing wafers in the wafer processing process or after the wafer processing is finished.
Background
Wafer refers to a silicon wafer used for manufacturing silicon semiconductor circuits, the original material of which is silicon. The high-purity polycrystalline silicon is dissolved and then doped with silicon crystal seed, and then slowly pulled out to form cylindrical monocrystalline silicon. The silicon ingot is ground, polished and sliced to form a silicon wafer, i.e., a wafer.
The main processing modes of the wafer are wafer processing and batch processing, namely 1 wafer or a plurality of wafers are processed simultaneously. As semiconductor feature sizes become smaller and smaller, processing and measurement equipment becomes more advanced, so that new data features appear in wafer processing. Meanwhile, the characteristic size is reduced, so that the influence of the particle number in the air on the quality and reliability of the processed wafer is increased during the processing of the wafer.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of Invention
The inventors have found that during the stretching of the wafer, a large number of conductive particles are generated, which are mainly silicon particles and loose particles, and the presence of the conductive particles greatly influences the performance of the wafer. On the other hand, after a long time of processing, a large amount of conductive particles are generated on the wafer. Currently, known methods for removing conductive particles include vacuum adsorption, gravity drop adsorption, etc., however, since the wafer processing (expanding and stretching) generates gaps in which conductive particles are easily adsorbed, these methods cannot remove conductive particles generated during the wafer processing. In addition, after the wafer processing is completed and before the wafer is used, conductive particles are also easily formed on the wafer due to the placement environment, and the conventional methods such as vacuum adsorption and gravity drop adsorption cannot remove the conductive particles well.
In view of at least one of the above problems, embodiments of the present application provide a method and system for removing conductive particles.
According to an aspect of an embodiment of the present application, there is provided a conductive particle removing method including:
Moving the electrostatic chuck in a direction approaching the wafer;
and adsorbing the conductive particles on the wafer by using the electrostatic chuck, so as to remove the conductive particles on the wafer.
In some embodiments, the conductive particles are generated during the wafer extension stretching process.
In the above embodiment, the method further includes:
disposing the wafer under a workbench;
and moving the workbench to enable the workbench to apply force to the wafer, so that the wafer is expanded and stretched, and the conductive particles are generated.
In some embodiments, the conductive particles are generated after the wafer processing is completed.
In the above embodiment, the method further includes:
Performing antistatic treatment on the processed wafer by adopting a first antistatic fan;
and after the conductive particles on the wafer are adsorbed by the electrostatic chuck, performing antistatic treatment on the wafer by adopting a second antistatic fan.
In some embodiments, the electrostatic chuck comprises:
A non-conductive plate for adsorbing particles on the wafer;
A base plate for supporting the non-conductive plate;
An electrode interposed between the non-conductive plate and the base plate for generating an electrostatic force so that the non-conductive plate can adsorb particles on the wafer.
According to another aspect of an embodiment of the present application, there is provided a conductive particle removal system, wherein the system includes:
a table for expanding and stretching the wafer;
and the electrostatic chuck is used for adsorbing and removing the conductive particles on the wafer after the expansion and stretching.
According to still another aspect of an embodiment of the present application, there is provided a conductive particle removal system, wherein the system includes:
a first antistatic fan for performing antistatic treatment on the processed wafer;
An electrostatic chuck for adsorbing the conductive particles on the wafer after the antistatic treatment;
and a second antistatic fan for performing antistatic treatment on the wafer after the adsorption.
In some embodiments, the system further comprises:
The wafer is configured on the conveyor belt, and along with the movement of the conveyor belt, the first antistatic fan, the electrostatic chuck and the second antistatic fan sequentially perform antistatic treatment, conductive particle adsorption treatment and antistatic treatment on the wafer.
One of the beneficial effects of the embodiment of the application is that: according to the embodiment of the application, the electrostatic chuck (ESC, electro Static Chuck, also called electrostatic chuck) is adopted to remove the conductive particles generated in the wafer stretching process or after the wafer processing is finished, so that the influence of the conductive particles on the wafer is avoided, and the yield is improved.
Specific embodiments of the application are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the application are not limited in scope thereby. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is evident that the drawings in the following description are only some embodiments of the present application and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art. In the drawings:
FIG. 1 is a schematic diagram of a method for removing conductive particles according to an embodiment of the present application;
FIG. 2 is another schematic diagram of a conductive particle removal method according to an embodiment of the present application;
FIG. 3 is a schematic diagram of the wafer being extended using the stage;
FIG. 4 is a schematic diagram of electrostatic adsorption of a wafer after extended stretching by using a conductive particle removal method according to an embodiment of the present application;
FIG. 5 is a further schematic diagram of a conductive particle removal method according to an embodiment of the present application;
FIG. 6 is another schematic diagram of electrostatic attraction of a wafer using a conductive particle removal method according to an embodiment of the present application;
FIG. 7 is a schematic diagram of an electrostatic chuck according to an embodiment of the present application;
FIG. 8 is a schematic diagram of cleaning an electrostatic chuck;
FIG. 9 is a schematic diagram of a conductive particle removal system according to an embodiment of the present application;
FIG. 10 is another schematic diagram of a conductive particle removal system of an embodiment of the present application;
FIG. 11 is a block diagram of a conductive particle removal system according to an embodiment of the present application;
fig. 12 is a schematic view of the internal configuration of the conductive particle removing system shown in fig. 11.
Detailed Description
The foregoing and other features of the application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the specification and drawings, there have been specifically disclosed specific embodiments of the application that are indicative of some of the ways in which the principles of the application may be employed, it being understood that the application is not limited to the specific embodiments described, but, on the contrary, the application includes all modifications, variations and equivalents falling within the scope of the appended claims.
In the embodiments of the present application, the terms "first," "second," and the like are used to distinguish between different elements from each other by name, but do not indicate spatial arrangement or time sequence of the elements, and the elements should not be limited by the terms. The term "and/or" includes any and all combinations of one or more of the associated listed terms. The terms "comprises," "comprising," "including," "having," and the like, are intended to reference the presence of stated features, elements, components, or groups of components, but do not preclude the presence or addition of one or more other features, elements, components, or groups of components.
In embodiments of the application, the singular forms "a," an, "and" the "may include plural forms and should be construed broadly as" one "or" one type "and not as limited to the meaning of" one; furthermore, the term "comprising" is to be interpreted as including both the singular and the plural, unless the context clearly dictates otherwise. Furthermore, the term "according to" should be understood as "based at least in part on … …", and the term "based on" should be understood as "based at least in part on … …", unless the context clearly indicates otherwise.
The following describes the implementation of the embodiment of the present application with reference to the drawings.
Example of the first aspect
The embodiment of the application provides a conductive particle removing method.
Fig. 1 is a schematic diagram of a method for removing conductive particles according to an embodiment of the application. As shown in fig. 1, the conductive particle removing method according to the embodiment of the present application includes:
101: moving the electrostatic chuck in a direction approaching the wafer;
102: and adsorbing the conductive particles on the wafer by using the electrostatic chuck, so as to remove the conductive particles on the wafer.
It should be noted that fig. 1 is only a schematic illustration of the embodiment of the present application, but the present application is not limited thereto. For example, the steps may be appropriately adjusted, and other steps may be added or some of the steps may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the description of fig. 1 above.
According to the embodiment of the application, the electrostatic chuck is adopted to remove the conductive particles on the wafer, so that the influence of the conductive particles on the wafer is avoided, and the yield is improved.
In an embodiment of the present application, the wafer may be a MEMS (Micro-Electro-MECHANICAL SYSTEM ) wafer, for example, with dimensions of 6 inches, 8 inches, etc. The MEMS wafer may be used for a microphone, or other electronic product.
In some embodiments, the conductive particles are generated during the wafer extension stretching process. Fig. 2 is another schematic diagram of a conductive particle removing method according to an embodiment of the present application, wherein the same contents as those of the embodiment of fig. 1 are not repeated. As shown in fig. 2, the method includes:
201: disposing the wafer under the workbench;
202: moving the workbench to enable the workbench to apply force to the wafer, so that the wafer is expanded and stretched to generate conductive particles;
203: moving the electrostatic chuck in a direction toward the wafer;
204: and adsorbing the conductive particles on the wafer by using the electrostatic chuck, so as to remove the conductive particles on the wafer.
It should be noted that fig. 2 above is only a schematic illustration of an embodiment of the present application, but the present application is not limited thereto. For example, the steps may be appropriately adjusted, and other steps may be added or some of the steps may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the description of fig. 2 above.
In the above embodiments, the MEMS wafer is still taken as an example. The MEMS wafer needs to be expanded (stretched) after laser cutting, and because of the small size of the MEMS wafer, particles or fragments, mainly silicon particles and loose particles, are generated during expansion. According to the method provided by the embodiment of the application, the particles are electrostatically adsorbed by the electrostatic chuck, so that the influence of the conductive particles on the wafer is avoided, and the yield is improved. In addition, when the MEMS wafer is applied to electronic products such as microphones, the quality and the assembly yield of the products are improved.
Fig. 3 is a schematic diagram of the wafer being stretched using the stage. As shown in fig. 3, the wafer 31 is attached to the lower surface of the diaphragm 32, the edge of the diaphragm 32 is fixed by the metal ring 33, and when the table 34 applies force to the wafer 31, the diaphragm 32 is flexible, deforms, bends, expands the wafer 31 under the pressure of the table, generates the gap 35, and particles generated by the expansion of the wafer 31 are adsorbed on the surface of the wafer 31 and possibly extend into the gap 35.
Fig. 4 is a schematic diagram of electrostatic adsorption of a wafer after the stretching by using the conductive particle removing method according to the embodiment of the present application, and the same contents as those of fig. 3 will not be repeated. As shown in fig. 4, since the gap 35 is generated after the wafer 31 is expanded, and the conductive particles generated by the expansion of the wafer 31 may be protruded into the gap 35, the conventional method for removing the conductive particles cannot be used. According to the method of the embodiment of the application, the conductive particles generated by the expansion of the wafer 31 are removed by electrostatic adsorption, so that the influence of the conductive particles on the wafer is avoided, and the yield is improved. When the wafer is applied to electronic products such as microphones, the quality and the assembly yield of the products are improved.
Table 1 below shows one example of the gain in yield obtained by expanding two types of MEMS wafers using existing methods and methods of embodiments of the present application.
Table 1:
in table 1, group 1 and group 3 are the gain and the average gain of the wafer obtained by expanding the wafer by the existing method, and group 2 and group 4 are the gain and the average gain of the wafer of the same type obtained by expanding the wafer by the method of the embodiment of the present application. From the four sets of values, the method of the embodiment of the application improves the gain of the yield and the average gain of the yield because the conductive particles generated in the wafer expanding process of the electrostatic chuck adsorption are increased.
In some embodiments, the conductive particles are generated after wafer processing is completed. Fig. 5 is a further schematic diagram of a conductive particle removal method according to an embodiment of the present application, wherein the same contents as those of the embodiment of fig. 1 are not repeated. As shown in fig. 5, the method includes:
501: performing antistatic treatment on the processed wafer by adopting a first antistatic fan;
502: conducting particles on the wafer are adsorbed by using an electrostatic chuck;
503: and carrying out antistatic treatment on the wafer by adopting a second antistatic fan.
It should be noted that fig. 5 above is only a schematic illustration of an embodiment of the present application, but the present application is not limited thereto. For example, the steps may be appropriately adjusted, and other steps may be added or some of the steps may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the description of fig. 5.
In the above embodiment, after the wafer processing is completed and before the wafer is used, conductive particles may be adsorbed on the wafer due to environmental factors or other factors.
Fig. 6 is another schematic diagram of electrostatic attraction of a wafer using a conductive particle removal method according to an embodiment of the present application. As shown in fig. 6, the processed wafer is placed on a conveyor 61, and moves along with the movement of the conveyor 61, and a first antistatic fan 62, an electrostatic chuck 63, and a second antistatic fan 64, which are placed at specific positions near the conveyor 61, sequentially perform antistatic treatment, electrostatic adsorption treatment (conductive particle adsorption treatment), and antistatic treatment on the wafer. Therefore, the conductive particles on the wafer can be effectively removed, and the yield of the wafer is improved. When the wafer is applied to electronic products such as microphones, the quality and the assembly yield of the products are improved.
In the embodiment of the application, the implementation modes of the electrostatic chuck and the antistatic fan are not limited. Both the electrostatic chuck and the antistatic fan of the prior art can be applied to the present application.
Fig. 7 is a schematic diagram of one embodiment of an electrostatic chuck 36, as shown in fig. 7, the electrostatic chuck 36 comprising:
A non-conductive plate 71 for adsorbing particles on a wafer;
a bottom plate 72 for supporting the non-conductive plate 71; and
An electrode 73 interposed between the non-conductive plate 71 and the bottom plate 72 for generating electrostatic attraction force so that the non-conductive plate 71 can attract particles on the wafer.
In some embodiments, as shown in fig. 7, the electrostatic chuck 700 may further comprise:
and an electrostatic generator 74 for supplying power to the electrode 73 and driving the electrode 73 to generate electrostatic attraction force.
In the above-described embodiments, only the constitution and basic principle of the electrostatic chuck related to the present application have been described, but the electrostatic chuck may also include other components having other structures, and specific reference may be made to the related art, and the description thereof will be omitted.
Fig. 8 is a schematic diagram of cleaning an electrostatic chuck. As shown in fig. 8, first, as shown in fig. 8 (a), particles on a wafer are adsorbed by an electrostatic chuck; thereafter, as shown in (b) of fig. 8, the electrostatic chuck is moved into the electrostatic chuck cleaning member 800; next, as shown in (c) of fig. 8, the electrostatic chuck is rotated to a vertical state; finally, as shown in fig. 8 (d), the electrostatic chuck cleaning member 800 operates to remove particles from the electrostatic chuck surface in preparation for the next electrostatic particle removal operation.
The above embodiments have been described only by way of example of the embodiments of the present application, but the present application is not limited thereto, and appropriate modifications may be made on the basis of the above embodiments. For example, each of the above embodiments may be used alone, or one or more of the above embodiments may be combined.
According to the method provided by the embodiment of the application, the conductive particles generated in the wafer stretching process or after the wafer processing is finished are removed by adopting the electrostatic chuck, so that the influence of the conductive particles on the wafer is avoided, and the yield is improved.
Embodiments of the second aspect
Embodiments of the second aspect of the present application provide a conductive particle removal system.
Fig. 9 is a schematic view of a conductive particle removal system according to an embodiment of the present application, and as shown in fig. 9, the conductive particle removal system 900 includes a platen 901 and an electrostatic chuck 902.
The stage 901 is used for performing the stretching of the wafer, and can be implemented by the stage 34 shown in fig. 3 and 4, to which the present application is not limited.
The electrostatic chuck 902 is used to adsorb and remove conductive particles on the stretched wafer, and may be implemented by the electrostatic chuck 36 shown in fig. 4 (i.e., the electrostatic chuck 36 shown in fig. 7), and since the structure of the electrostatic chuck 36 has been described in the embodiment of the first aspect, the details thereof are not repeated herein.
Fig. 10 is another schematic view of a conductive particle removal system according to an embodiment of the present application, as shown in fig. 10, the conductive particle removal system 1000 includes: a first antistatic fan 1001, an electrostatic chuck 1002, and a second antistatic fan 1003.
The first antistatic fan 1001 is used for performing antistatic treatment on the processed wafer; the electrostatic chuck 1002 is used for adsorbing conductive particles on the wafer after the antistatic treatment; the second antistatic fan 1003 is used for performing antistatic treatment on the wafer after the adsorption.
In the above embodiment, the system 1000 may further include:
And a conveyor 1004, wherein the wafers are disposed on the conveyor 1004, and the first antistatic fan 1001, the electrostatic chuck 1002, and the second antistatic fan 1003 perform antistatic treatment, conductive particle adsorption treatment, and antistatic treatment on the wafers in order as the conveyor 1004 moves.
Since in the embodiment of the first aspect, the structures of the electrostatic chuck and the antistatic fan have been described, the contents thereof are incorporated herein and will not be described again.
Fig. 11 is a block diagram of a conductive particle removal system according to an embodiment of the present application. Fig. 12 is a schematic view of the internal configuration of the conductive particle removing system shown in fig. 11.
As shown in fig. 11 and 12, the conductive particle removal system includes: a transmission module 1101; a film cutting module 1102; a waste film collection module 1103; a wafer stretching module and an electrostatic chuck 1104; an electrostatic chuck cleaning module 1105.
Wherein the transfer module 1101 is configured to transfer the wafer back and forth between the film cutting module 1102 and the wafer stretching module and the electrostatic chuck 1104; the film cutting module 1102 is used for preparing a film for wafer stretching; the waste film collecting module 1103 is used for collecting waste films generated by cutting; the wafer stretching module and the electrostatic chuck 1104 are used for stretching the wafer and eliminating conductive particles generated in the wafer stretching process by using the electrostatic chuck; the electrostatic chuck cleaning module 1105 is configured to clean the electrostatic chuck for a next round of processing by the electrostatic chuck.
In the above embodiment, the transfer module 1101 is a wafer transfer component for transferring wafers, such as picking and placing wafers, and the like, which may include a wafer picking apparatus and a conveyor belt, and the like, and the present application is not limited to the specific embodiment thereof.
In the above embodiment, as shown in fig. 12, the film cutting module 1102 includes a loading area R1, where the loading area R1 is merely used to illustrate the position and size of the wafer, so as to prepare a film (the film 32 as described above) for stretching the wafer, and no wafer is disposed on the loading area R1.
In the above embodiment, as shown in fig. 12, the waste film collecting module 1103 may be in the shape of a storage box or other shape, and the present application is not limited thereto.
In the above embodiment, as shown in fig. 12, the wafer stretching module and electrostatic chuck 1104 includes a wafer expansion module WEM (such as the workbench 34 described above) and an electrostatic chuck ESC (such as the electrostatic chuck 36 described above) located below the wafer expansion module, and in addition, the wafer stretching module and electrostatic chuck 1104 may further include a loading area R2, where the loading area R2 is used to place a wafer to be stretched.
In the above-described embodiment, as shown in fig. 12, the electrostatic chuck cleaning module 1105 is a cleaning member of an electrostatic chuck for cleaning the electrostatic chuck so as to use the electrostatic chuck in the next round of process.
In the above embodiment, as shown in fig. 12, the conductive particle removal system may further include an X-axis module 1106, which is a moving part of the electrostatic chuck, for driving the electrostatic chuck to reciprocate between the stage and the cleaning zone. The application is not limited to this embodiment of the X-axis module 1106 and may include, for example, a motor, rotating equipment, and the like.
According to the embodiment of the application, the electrostatic chuck is adopted to remove the conductive particles generated in the wafer stretching process or after the wafer processing is finished, so that the influence of the conductive particles on the wafer is avoided, and the yield is improved.
While the application has been described in connection with specific embodiments, it will be apparent to those skilled in the art that the description is intended to be illustrative and not limiting in scope. Various modifications and alterations of this application will occur to those skilled in the art in light of the spirit and principles of this application, and such modifications and alterations are also within the scope of this application.
Preferred embodiments of the present application are described above with reference to the accompanying drawings. The many features and advantages of the embodiments are apparent from the detailed specification, and thus, it is intended by the appended claims to cover all such features and advantages of the embodiments which fall within the true spirit and scope thereof. Further, since numerous modifications and changes will readily occur to those skilled in the art, it is not desired to limit the embodiments of the application to the exact construction and operation illustrated and described, and accordingly, all suitable modifications and equivalents may be resorted to, falling within the scope thereof.
Claims (6)
1. A method of conductive particle removal, wherein the method comprises:
Arranging a wafer attached to a deformable membrane below a workbench;
moving the workbench to enable the workbench to apply force to the wafer, so that the wafer is expanded and stretched to generate conductive particles, and the conductive particles are adsorbed in gaps generated by the expanded and stretched wafer;
moving the electrostatic chuck in a direction toward the wafer;
adsorbing the conductive particles on the wafer by using the electrostatic chuck, so as to remove the conductive particles on the wafer;
Wherein, the electrostatic chuck includes:
A non-conductive plate for adsorbing particles on the wafer;
A base plate for supporting the non-conductive plate;
An electrode interposed between the non-conductive plate and the base plate for generating an electrostatic force so that the non-conductive plate can adsorb particles on the wafer.
2. The method of claim 1, wherein the method further comprises:
Before the electrostatic chuck is used for adsorbing conductive particles on the wafer, a first antistatic fan is used for antistatic treatment on the processed wafer;
And after conducting particles on the wafer subjected to the antistatic treatment are adsorbed by using an electrostatic chuck, performing the antistatic treatment on the wafer by adopting a second antistatic fan.
3. A conductive particle removal system, wherein the system comprises:
A work table for expanding and stretching a wafer arranged below the work table to generate conductive particles, wherein the conductive particles are adsorbed in gaps generated by the expanded and stretched wafer;
An electrostatic chuck that moves in a direction approaching the wafer to adsorb conductive particles on the wafer, thereby removing the conductive particles on the wafer;
Wherein, the electrostatic chuck includes:
A non-conductive plate for adsorbing particles on the wafer;
A base plate for supporting the non-conductive plate;
An electrode interposed between the non-conductive plate and the base plate for generating an electrostatic force so that the non-conductive plate can adsorb particles on the wafer.
4. A system according to claim 3, wherein the system further comprises:
A first antistatic fan for performing antistatic treatment on the processed wafer before the electrostatic chuck adsorbs the conductive particles on the wafer;
and a second antistatic fan for performing antistatic treatment on the wafer after the electrostatic chuck adsorbs the conductive particles on the wafer after the antistatic treatment.
5. The system of claim 4, wherein the system further comprises:
The wafer is configured on the conveyor belt, and along with the movement of the conveyor belt, the first antistatic fan, the electrostatic chuck and the second antistatic fan sequentially perform antistatic treatment, conductive particle adsorption treatment and antistatic treatment on the wafer.
6. A conductive particle removal system, wherein the system comprises:
A transfer module for transferring the wafer back and forth between the film cutting module and the wafer stretching module and the electrostatic chuck;
the film cutting module is used for preparing a film used for stretching a wafer;
the waste film collecting module is used for collecting waste films generated by cutting;
The wafer stretching module is used for stretching the wafer to generate conductive particles, and the conductive particles are adsorbed in gaps generated by the stretched wafer;
an electrostatic chuck that eliminates conductive particles generated during a wafer stretching process; and
An electrostatic chuck cleaning module for cleaning the electrostatic chuck for a next round of process;
Wherein, the electrostatic chuck includes:
A non-conductive plate for adsorbing particles on the wafer;
A base plate for supporting the non-conductive plate;
An electrode interposed between the non-conductive plate and the base plate for generating an electrostatic force so that the non-conductive plate can adsorb particles on the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310078222.4A CN116805586B (en) | 2023-01-31 | 2023-01-31 | Conductive particle removal method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310078222.4A CN116805586B (en) | 2023-01-31 | 2023-01-31 | Conductive particle removal method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116805586A CN116805586A (en) | 2023-09-26 |
| CN116805586B true CN116805586B (en) | 2024-07-19 |
Family
ID=88078649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310078222.4A Active CN116805586B (en) | 2023-01-31 | 2023-01-31 | Conductive particle removal method and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116805586B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW424001B (en) * | 1996-02-02 | 2001-03-01 | Applied Materials Inc | An apparatus for the electrostatic collection of contaminant particles from a substrate in semiconductor substrate processing equipment and a method for removing contaminant particles from the surface of a substrate |
| CN102403199A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for removing surface particles of wafer |
| CN109065439A (en) * | 2018-08-09 | 2018-12-21 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer surface particles eliminating equipment and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105225924A (en) * | 2014-06-18 | 2016-01-06 | 上海华力微电子有限公司 | A kind of method removing crystal column surface particle |
| KR102358693B1 (en) * | 2015-01-06 | 2022-02-04 | 삼성전자주식회사 | Single Wafer Type Cleaning Apparatus |
| CN211613660U (en) * | 2019-12-09 | 2020-10-02 | 北京华卓精科科技股份有限公司 | Device for removing particles on surface of wafer |
| CN114967350A (en) * | 2021-02-23 | 2022-08-30 | 台湾积体电路制造股份有限公司 | Methods of removing particles |
-
2023
- 2023-01-31 CN CN202310078222.4A patent/CN116805586B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW424001B (en) * | 1996-02-02 | 2001-03-01 | Applied Materials Inc | An apparatus for the electrostatic collection of contaminant particles from a substrate in semiconductor substrate processing equipment and a method for removing contaminant particles from the surface of a substrate |
| CN102403199A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for removing surface particles of wafer |
| CN109065439A (en) * | 2018-08-09 | 2018-12-21 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer surface particles eliminating equipment and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116805586A (en) | 2023-09-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI419577B (en) | Method and device of manufacturing speaker | |
| KR102247838B1 (en) | Dividing apparatus and dividing method of resin-sheet | |
| US8528886B2 (en) | Material sheet handling system and processing methods | |
| CN1677623A (en) | Wafer processing method | |
| CN107768296B (en) | Peeling method and peeling apparatus | |
| US20150137003A1 (en) | Specimen preparation method | |
| JP2014067873A (en) | Protective tape peeling method and protective tape peeling device | |
| CN110034065A (en) | The manufacturing method and pick device of device chip | |
| CN116805586B (en) | Conductive particle removal method and system | |
| CN101579856A (en) | Bad crystal grain selecting machine and method thereof | |
| US6184063B1 (en) | Method and apparatus for breaking and separating a wafer into die using a multi-radii dome | |
| US8980655B2 (en) | Test apparatus and test method | |
| WO2014171584A1 (en) | Vacuum chuck for semiconductor production equipment used for flatness maintenance and chipping prevention | |
| US3765431A (en) | Apparatus for handling and maintaining the orientation of a matrix of miniature electrical devices | |
| JP3453707B2 (en) | Substrate or sheet surface cleaning equipment | |
| WO2018234768A1 (en) | Apparatus and method for manufacturing plurality of electronic circuits | |
| JP3260683B2 (en) | Substrate transfer device | |
| CN102059842B (en) | Separation device and separation method thereof | |
| US20120017938A1 (en) | Platen cleaning | |
| JP2020053610A (en) | Wafer manufacturing method and wafer holding jig | |
| JP5600997B2 (en) | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method | |
| US6930387B2 (en) | Dicing tape and die ejection method | |
| JPH09123050A (en) | Mirror surface polishing method of chamfering surface of semiconductor wafer and its device | |
| JPH07131137A (en) | Wiring board repairing apparatus and method | |
| JP2018192750A (en) | Method for producing wafer, and pressing fixture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Cao Hongliang Inventor after: Lin Hongqian Inventor after: Xu Yingguan Inventor after: Li Changchun Inventor before: Qiu Shenghua Inventor before: Lin Hongqian Inventor before: Cao Hongliang Inventor before: Li Changchun |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |