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CN116798874A - A method and system for improving temperature uniformity of multi-chip interconnection structures - Google Patents

A method and system for improving temperature uniformity of multi-chip interconnection structures Download PDF

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Publication number
CN116798874A
CN116798874A CN202310354949.0A CN202310354949A CN116798874A CN 116798874 A CN116798874 A CN 116798874A CN 202310354949 A CN202310354949 A CN 202310354949A CN 116798874 A CN116798874 A CN 116798874A
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heat dissipation
layer
fins
chip
elements
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李霞
姜申飞
胡杨
王浩
潘岳
王立华
朱小云
王磊
郝培霖
韩慧明
莫志文
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Tsinghua University
Shanghai AI Innovation Center
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Tsinghua University
Shanghai AI Innovation Center
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Abstract

The application relates to the technical field of chip heat dissipation, and provides a method and a system for improving the temperature uniformity of a multi-chip interconnection structure, wherein the method comprises the steps of arranging a plurality of heat dissipation elements on a substrate to form a heat dissipation layer, wherein the heat dissipation capacity of the heat dissipation elements arranged at a position close to a second side of the heat dissipation layer is higher than that of the heat dissipation elements arranged at a position close to a first side of the heat dissipation layer; disposing a heat dissipation layer on a chip interconnect layer, wherein the chip interconnect layer comprises a plurality of dies; and disposing a cover plate layer on the heat dissipation layer, wherein heat generated by the chip interconnection layer is conducted to the cover plate layer by the heat dissipation layer, and heat exchange is performed by the cover plate layer and the heat dissipation layer. The application can effectively improve the temperature uniformity of the multi-chip interconnection structure.

Description

一种改善多芯片互联结构的均温性的方法及系统A method and system for improving temperature uniformity of multi-chip interconnection structures

技术领域Technical field

本发明总的来说涉及芯片散热技术领域。具体而言,本发明涉及一种改善多芯片互联结构的均温性的方法及系统。The present invention generally relates to the technical field of chip heat dissipation. Specifically, the present invention relates to a method and system for improving the temperature uniformity of a multi-chip interconnection structure.

背景技术Background technique

随着芯片的集成规模越来越大,芯片的单位面积上需求的功率也越来越大。芯片的单位面积上的功率增加将导致芯片上的热流密度(热通量)的增加,使得芯片发热量增大,进而导致芯片的散热问题目益严重。尤其是对于多芯片互联的晶圆级芯片,由于多个芯片相互连接,因此当芯片发热严重并且温度分布不均匀时,很容易造成器件和设备的损坏。因此,需要提出一种可以改善多芯片互联结构的均温性的方法。As the integration scale of chips becomes larger and larger, the power required per unit area of the chip is also increasing. The increase in the power per unit area of the chip will lead to an increase in the heat flow density (heat flux) on the chip, which will increase the heat generated by the chip, thereby causing the chip's heat dissipation problem to become more serious. Especially for multi-chip interconnected wafer-level chips, since multiple chips are connected to each other, when the chip heats up severely and the temperature distribution is uneven, it is easy to cause damage to devices and equipment. Therefore, it is necessary to propose a method that can improve the temperature uniformity of multi-chip interconnect structures.

发明内容Contents of the invention

为至少部分解决现有技术中的上述问题,本发明提出一种改善多芯片互联结构的均温性的方法,包括下列步骤:In order to at least partially solve the above-mentioned problems in the prior art, the present invention proposes a method for improving the temperature uniformity of a multi-chip interconnect structure, which includes the following steps:

在基板上布置多个散热元件以形成散热层,其中布置在靠近散热层的第二侧的位置处的散热元件的散热能力高于靠近布置在靠近散热层的与第二侧相对的第一侧的位置处的散热元件的散热能力;A plurality of heat dissipation elements are arranged on the substrate to form a heat dissipation layer, wherein the heat dissipation ability of the heat dissipation elements disposed close to the second side of the heat dissipation layer is higher than that of the heat dissipation element disposed close to the first side opposite to the second side of the heat dissipation layer. The heat dissipation capacity of the heat dissipation element at the location;

将所述散热层布置在芯片互联层上,其中所述芯片互联层包括多个晶粒;以及disposing the heat dissipation layer on a chip interconnect layer, wherein the chip interconnect layer includes a plurality of dies; and

将盖板层布置在所述散热层上,其中由所述散热层将所述芯片互联层产生的热量传导至所述盖板层,并且由所述盖板层与所述散热层进行换热。A cover plate layer is arranged on the heat dissipation layer, wherein the heat dissipation layer conducts the heat generated by the chip interconnection layer to the cover plate layer, and the cover plate layer conducts heat exchange with the heat dissipation layer. .

在本发明一个实施例中规定,将所述散热层布置在芯片互联层上包括将多个散热元件的至少之一布置在所述多个晶粒之一之上。In one embodiment of the present invention, arranging the heat dissipation layer on the chip interconnect layer includes arranging at least one of a plurality of heat dissipation elements on one of the plurality of dies.

在本发明一个实施例中规定,将每个散热元件布置在所述多个晶粒之一之上。In one embodiment of the invention it is provided that each heat dissipation element is arranged on one of the plurality of dies.

在本发明一个实施例中规定,由所述盖板层与所述散热层进行换热包括:In one embodiment of the present invention, heat exchange between the cover plate layer and the heat dissipation layer includes:

在所述盖板层的第一侧设置冷却剂入口,其中所述盖板层的第一侧与所述散热层的第一侧对应;A coolant inlet is provided on a first side of the cover layer, wherein the first side of the cover layer corresponds to the first side of the heat dissipation layer;

在所述盖板层的第二侧设置冷却剂出口,所述盖板层的第二侧与所述散热层的第一侧对应;以及A coolant outlet is provided on a second side of the cover layer, the second side of the cover layer corresponding to the first side of the heat dissipation layer; and

使冷却剂由所述盖板层的第一侧流向第二侧同时与所述散热层进行换热,并且从所述冷却剂出口流出。The coolant flows from the first side to the second side of the cover layer while exchanging heat with the heat dissipation layer, and flows out from the coolant outlet.

在本发明一个实施例中规定,所述改善多芯片互联结构的均温性的方法还包括:In one embodiment of the present invention, the method for improving the temperature uniformity of a multi-chip interconnection structure further includes:

在所述基板与所述芯片互联层之间设置导热层,其中所述导热层被配置为将所述晶粒产生的热量传导至所述散热元件。A thermal conductive layer is provided between the substrate and the chip interconnect layer, wherein the thermal conductive layer is configured to conduct heat generated by the die to the heat dissipation element.

在本发明一个实施例中规定,将多个散热元件构造为具有不同的结构以具有不同的散热能力。In one embodiment of the invention, it is provided that a plurality of heat dissipation elements are configured with different structures to have different heat dissipation capabilities.

在本发明一个实施例中规定,将多个散热元件构造为具有不同的结构包括:In one embodiment of the present invention, configuring multiple heat dissipation elements to have different structures includes:

将多个所述散热元件构造为包括直线形翅片、波浪形翅片或者锯齿形翅片,其中所述锯齿形翅片的散热能力大于所述波浪形翅片的散热能力,并且所述波浪形翅片的散热能力大于所述直线形翅片的散热能力。A plurality of the heat dissipation elements are configured to include linear fins, wavy fins or zigzag fins, wherein the heat dissipation capacity of the zigzag fins is greater than the heat dissipation capacity of the wavy fins, and the wavy fins The heat dissipation capacity of the linear fins is greater than the heat dissipation capacity of the linear fins.

在本发明一个实施例中规定,将多个散热元件构造为具有不同的结构包括:In one embodiment of the present invention, configuring multiple heat dissipation elements to have different structures includes:

将多个所述散热元件构造为由多个翅片组成、由多个翅片和翅针组成、或者由多个翅针组成,其中所述翅针的散热能力大于所述翅片的散热能力。A plurality of the heat dissipation elements is configured to consist of a plurality of fins, a plurality of fins and fin pins, or a plurality of fin pins, wherein the heat dissipation capacity of the fin pins is greater than the heat dissipation capacity of the fins. .

在本发明一个实施例中规定,将多个散热元件构造为具有不同的结构包括:In one embodiment of the present invention, configuring multiple heat dissipation elements to have different structures includes:

将多个所述散热元件构造为包括不同形状的翅针,所述翅针的形状包括圆柱形以及方柱形,其中方柱形翅针的散热能力大于所述圆柱形翅针的散热能力;和\或Constructing a plurality of the heat dissipation elements to include fin pins of different shapes, the shapes of the fin pins including cylindrical and square cylindrical fins, wherein the heat dissipation capacity of the square cylindrical fin pins is greater than the heat dissipation capacity of the cylindrical fin pins; and / or

将多个所述散热元件构造为包括不同尺寸的翅针,其中多个第一尺寸翅针的散热能力大于多个第二尺寸翅针的散热能力,所述第一尺寸小于所述第二尺寸;和\或A plurality of the heat dissipation elements are configured to include fins of different sizes, wherein a plurality of first size fins has a heat dissipation capacity greater than a plurality of second size fins, the first size being smaller than the second size. ;and / or

将多个所述散热元件构造为包括不同间距的翅针,其中多个距离第一间距的翅针的散热能力大于多个距离第二间距的翅针的散热能力,所述第一间距小于所述第二间距。A plurality of the heat dissipation elements are configured to include fin pins with different spacing, wherein the heat dissipation capacity of the fin pins at a first spacing is greater than the heat dissipation capacity of the fin pins at a second spacing, and the first spacing is smaller than the fin pins. Describe the second distance.

本发明还提出一种改善多芯片互联结构的均温性的系统,包括:The present invention also proposes a system for improving the temperature uniformity of a multi-chip interconnection structure, including:

芯片互联层,其包括多个晶粒;a chip interconnect layer, which includes multiple dies;

散热层,其布置在所述芯片互联层上,所述散热层包括多个散热元件,其中布置在靠近散热层的第二侧的位置处的散热元件的散热能力高于靠近布置在靠近散热层的第一侧的位置处的散热元件的散热能力;以及a heat dissipation layer disposed on the chip interconnect layer, the heat dissipation layer comprising a plurality of heat dissipation elements, wherein the heat dissipation element disposed close to the second side of the heat dissipation layer has a higher heat dissipation capacity than the heat dissipation element disposed close to the heat dissipation layer the heat dissipation capacity of the heat dissipation element at the location of the first side; and

盖板层,其布置在所述散热层上,其中所述散热层将所述芯片互联层产生的热量传导至所述盖板层,并且所述盖板层与所述散热层进行换热。A cover plate layer is arranged on the heat dissipation layer, wherein the heat dissipation layer conducts the heat generated by the chip interconnect layer to the cover plate layer, and the cover plate layer exchanges heat with the heat dissipation layer.

本发明至少具有如下有益效果:本发明提出一种改善多芯片互联结构的均温性的方法,其中将散热元件构造为具有不同的结构以具有不同的散热能力,并且使布置在靠近散热层的第二侧的位置处的散热元件的散热能力高于靠近布置在靠近散热层的第一侧的位置处的散热元件的散热能力,可以有效改善多芯片互联结构的均温性。The present invention at least has the following beneficial effects: The present invention proposes a method for improving the temperature uniformity of a multi-chip interconnection structure, in which the heat dissipation elements are constructed to have different structures to have different heat dissipation capabilities, and the heat dissipation elements are arranged close to the heat dissipation layer. The heat dissipation capacity of the heat dissipation element at the position on the second side is higher than the heat dissipation capacity of the heat dissipation element disposed close to the first side of the heat dissipation layer, which can effectively improve the temperature uniformity of the multi-chip interconnection structure.

附图说明Description of the drawings

为进一步阐明本发明的各实施例中具有的及其它的优点和特征,将参考附图来呈现本发明的各实施例的更具体的描述。可以理解,这些附图只描绘本发明的典型实施例,因此将不被认为是对其范围的限制。在附图中,为了清楚明了,相同或相应的部件将用相同或类似的标记表示。To further elucidate the advantages and features of various embodiments of the invention, a more specific description of the embodiments of the invention will be presented with reference to the accompanying drawings. It will be understood that the drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be labeled with the same or similar reference numerals, for purposes of clarity and clarity.

图1示出了本发明一个实施例中一个用于多芯片互联结构的散热系统的分层结构示意图。FIG. 1 shows a schematic diagram of the hierarchical structure of a heat dissipation system for a multi-chip interconnection structure in one embodiment of the present invention.

图2A示出了本发明一个实施例中一个散热层的结构示意图。FIG. 2A shows a schematic structural diagram of a heat dissipation layer in an embodiment of the present invention.

图2B示出了本发明一个实施例中一个散热层的平面示意图。FIG. 2B shows a schematic plan view of a heat dissipation layer in one embodiment of the present invention.

图3A示出了本发明一个实施例中一个散热元件的结构示意图。FIG. 3A shows a schematic structural diagram of a heat dissipation element in an embodiment of the present invention.

图3B示出了本发明一个实施例中一个散热元件的平面示意图。Figure 3B shows a schematic plan view of a heat dissipation element in one embodiment of the present invention.

图4示出了本发明一个实施例中不同结构的散热元件的示意图。Figure 4 shows a schematic diagram of heat dissipation elements with different structures in one embodiment of the present invention.

图5A示出了本发明另一实施例中不同结构的散热元件的示意图。FIG. 5A shows a schematic diagram of a heat dissipation element with different structures in another embodiment of the present invention.

图5B示出了本发明另一实施例中不同结构的散热元件的平面示意图。FIG. 5B shows a schematic plan view of a heat dissipation element with different structures in another embodiment of the present invention.

图6示出了本发明另一实施例中不同结构的散热元件的示意图。Figure 6 shows a schematic diagram of a heat dissipation element with different structures in another embodiment of the present invention.

图7A-G示出了本发明一个实施例中散热系统从第一侧到第二侧的一列散热元件的示意图。7A-G show a schematic diagram of an array of heat dissipation elements from the first side to the second side of the heat dissipation system in one embodiment of the present invention.

图8示出了本发明一个实施例中一个具有多个相同的散热元件的散热系统的仿真实验温度示意图。Figure 8 shows a schematic temperature diagram of a simulation experiment of a heat dissipation system with multiple identical heat dissipation elements in one embodiment of the present invention.

图9示出了本发明一个实施例中一个根据所述改善多芯片互联结构的均温性的方法的散热系统的仿真实验温度示意图。Figure 9 shows a schematic temperature diagram of a simulation experiment of a heat dissipation system according to the method for improving the temperature uniformity of a multi-chip interconnect structure in an embodiment of the present invention.

图10示出了本发明一个实施例中一个改善多芯片互联结构的均温性的方法的流程示意图。FIG. 10 shows a schematic flowchart of a method for improving the temperature uniformity of a multi-chip interconnection structure in an embodiment of the present invention.

图11A示出了本发明一个实施例中一列散热元件的结构示意图。FIG. 11A shows a schematic structural diagram of an array of heat dissipation elements in one embodiment of the present invention.

图11B示出了本发明一个实施例中一列散热元件的平面示意图。Figure 11B shows a schematic plan view of an array of heat dissipation elements in one embodiment of the present invention.

具体实施方式Detailed ways

应当指出,各附图中的各组件可能为了图解说明而被夸大地示出,而不一定是比例正确的。在各附图中,给相同或功能相同的组件配备了相同的附图标记。It should be noted that components in the various figures may be exaggerated for illustration and are not necessarily proportionally correct. In the various figures, identical or functionally identical components are assigned the same reference numerals.

在本发明中,除非特别指出,“布置在…上”、“布置在…上方”以及“布置在…之上”并未排除二者之间存在中间物的情况。此外,“布置在…上或上方”仅仅表示两个部件之间的相对位置关系,而在一定情况下、如在颠倒产品方向后,也可以转换为“布置在…下或下方”,反之亦然。In the present invention, unless otherwise specified, “arranged on,” “arranged on,” and “arranged on” do not exclude the presence of intermediates between the two. In addition, "arranged on or above" only indicates the relative positional relationship between the two components. Under certain circumstances, such as after reversing the product direction, it can also be converted to "arranged on or below", and vice versa. Of course.

在本发明中,各实施例仅仅旨在说明本发明的方案,而不应被理解为限制性的。In the present invention, each embodiment is only intended to illustrate the solution of the present invention and should not be construed as limiting.

在本发明中,除非特别指出,量词“一个”、“一”并未排除多个元素的场景。In the present invention, unless otherwise specified, the quantifiers "a" and "一" do not exclude the scenario of multiple elements.

在此还应当指出,在本发明的实施例中,为清楚、简单起见,可能示出了仅仅一部分部件或组件,但是本领域的普通技术人员能够理解,在本发明的教导下,可根据具体场景需要添加所需的部件或组件。另外,除非另行说明,本发明的不同实施例中的特征可以相互组合。例如,可以用第二实施例中的某特征替换第一实施例中相对应或功能相同或相似的特征,所得到的实施例同样落入本申请的公开范围或记载范围。It should also be noted here that in the embodiments of the present invention, for the sake of clarity and simplicity, only some parts or assemblies may be shown. However, those of ordinary skill in the art can understand that under the teachings of the present invention, they may be modified according to specific The scene needs to add the required parts or components. In addition, features of different embodiments of the invention may be combined with each other unless stated otherwise. For example, a certain feature in the second embodiment can be used to replace a corresponding feature in the first embodiment or a feature with the same or similar function, and the resulting embodiment also falls within the disclosure scope or recording scope of the present application.

在此还应当指出,在本发明的范围内,“相同”、“相等”、“等于”等措辞并不意味着二者数值绝对相等,而是允许一定的合理误差,也就是说,所述措辞也涵盖了“基本上相同”、“基本上相等”、“基本上等于”。以此类推,在本发明中,表方向的术语“垂直于”、“平行于”等等同样涵盖了“基本上垂直于”、“基本上平行于”的含义。It should also be noted here that within the scope of the present invention, terms such as "the same", "equal", and "equal to" do not mean that the two values are absolutely equal, but allow a certain reasonable error. That is to say, the The wording also covers "substantially the same", "substantially equal", and "substantially equal to". By analogy, in the present invention, the terms "perpendicular to", "parallel to", etc. indicating directions also include the meanings of "substantially perpendicular to" and "substantially parallel to".

在本发明中,术语“散热能力”是指单位时间内在单位面积上排出热量的数值。In the present invention, the term "heat dissipation capacity" refers to the value of heat dissipation per unit area per unit time.

另外,本发明的各方法的步骤的编号并未限定所述方法步骤的执行顺序。除非特别指出,各方法步骤可以以不同顺序执行。In addition, the numbering of the steps of each method of the present invention does not limit the execution order of the method steps. Unless otherwise stated, method steps may be performed in a different order.

下面结合具体实施方式参考附图进一步阐述本发明。The present invention will be further described below in conjunction with specific embodiments and with reference to the accompanying drawings.

图1示出了本发明一个实施例中一个用于多芯片互联结构的散热系统的分层结构示意图。如图1所示,其中所述散热系统包括盖板层101、散热层102以及芯片互联层103。FIG. 1 shows a schematic diagram of the hierarchical structure of a heat dissipation system for a multi-chip interconnection structure in one embodiment of the present invention. As shown in FIG. 1 , the heat dissipation system includes a cover layer 101 , a heat dissipation layer 102 and a chip interconnection layer 103 .

所述散热层102布置在所述芯片互联层103上,所述盖板层101布置在所述散热层102上,其中所述散热层102将所述芯片互联层103产生的热量传导至所述盖板层101,并且在所述盖板层101进行换热。所述芯片互联层103包括多个晶粒108,其中多个所述晶粒108相互连接。The heat dissipation layer 102 is arranged on the chip interconnection layer 103, and the cover layer 101 is arranged on the heat dissipation layer 102, wherein the heat dissipation layer 102 conducts the heat generated by the chip interconnection layer 103 to the Cover layer 101, and heat exchange is performed on the cover layer 101. The chip interconnect layer 103 includes a plurality of die 108, wherein the plurality of die 108 are connected to each other.

所述盖板层101以及所述散热层102可以通过焊接工艺一体成型,形成一个完成的液冷散热装置。在所述盖板层101的第一侧上设置有冷却剂入口104,在所述盖板层101的与第一侧相对的第二侧上设置有冷却剂出口105,所述冷却剂入口104可以与进水管连接,所述冷却剂出口104可以与出水管连接,其中冷却剂可以从所述盖板层101的第一侧流向第二侧并且带走传导至所述盖板层101的热量。The cover layer 101 and the heat dissipation layer 102 can be integrally formed through a welding process to form a complete liquid cooling heat dissipation device. A coolant inlet 104 is provided on a first side of the cover layer 101 , and a coolant outlet 105 is provided on a second side of the cover layer 101 opposite to the first side. The coolant inlet 104 The coolant outlet 104 can be connected to a water inlet pipe, and the coolant outlet 104 can be connected to a water outlet pipe, wherein the coolant can flow from the first side to the second side of the cover layer 101 and take away the heat conducted to the cover layer 101 .

图2A示出了本发明一个实施例中一个散热层的结构示意图。图2B示出了本发明一个实施例中一个散热层的平面示意图。如图2A和图2B所示,所述散热层102包括基板106以及多个散热元件107,其中多个所述散热元件107布置在所述基板106上。多个散热元件107的至少其中之一布置在所述多个晶粒108的其中之一的上方,优选的,可以如图1所示,多个散热元件107与所述多个晶粒108一一对应。所述散热层102与所述芯片互联层103相贴合,在所述基板106与所述芯片互联层103之间可以设置导热层以便将所述晶粒108工作时产生的热量传导至所述散热元件107。FIG. 2A shows a schematic structural diagram of a heat dissipation layer in an embodiment of the present invention. FIG. 2B shows a schematic plan view of a heat dissipation layer in one embodiment of the present invention. As shown in FIGS. 2A and 2B , the heat dissipation layer 102 includes a substrate 106 and a plurality of heat dissipation elements 107 , wherein a plurality of the heat dissipation elements 107 are arranged on the substrate 106 . At least one of the plurality of heat dissipation elements 107 is arranged above one of the plurality of die 108 . Preferably, as shown in FIG. 1 , the plurality of heat dissipation elements 107 are arranged together with the plurality of die 108 . One correspondence. The heat dissipation layer 102 is attached to the chip interconnection layer 103, and a thermal conductive layer can be provided between the substrate 106 and the chip interconnection layer 103 to conduct the heat generated when the die 108 is working to the chip interconnection layer 103. Heat dissipation element 107.

图3A示出了本发明一个实施例中一个散热元件的结构示意图。图3B示出了本发明一个实施例中一个散热元件的平面示意图。如图3A和图3B所示,所述散热元件107布置在所述基板106上,并且所述散热元件107可以包括第一区域以及第二区域,所述第一区域位于所述散热元件的中心处,所述第二区域位于所述第一区域的周围,其中所述散热元件被构造为在第一区域的散热能力大于等于在第二区域的散热能力。例如所述散热元件可以包括翅针301以及翅片302,其中所述翅针301可以布置在所述第一区域上,所述翅片302布置在所述第二区域上,多个所述翅片302之间可以形成流道。FIG. 3A shows a schematic structural diagram of a heat dissipation element in an embodiment of the present invention. Figure 3B shows a schematic plan view of a heat dissipation element in one embodiment of the present invention. As shown in FIGS. 3A and 3B , the heat dissipation element 107 is arranged on the substrate 106 , and the heat dissipation element 107 may include a first area and a second area, and the first area is located in the center of the heat dissipation element. , the second area is located around the first area, wherein the heat dissipation element is configured such that the heat dissipation capacity in the first area is greater than or equal to the heat dissipation capacity in the second area. For example, the heat dissipation element may include fin pins 301 and fins 302, wherein the fin pins 301 may be arranged on the first area, the fins 302 may be arranged on the second area, and a plurality of the fins may be arranged on the first area. Flow channels may be formed between the sheets 302.

本发明所提供的散热系统的散热效果在第一方面可以由冷却剂的流速决定。通过仿真实验发现,冷却剂的流速越快,散热系统的散热效果越好,但当冷却剂的流速达到临界值后,即使继续提升冷却剂的流速,也难以继续提升散热系统的散热效果。根据仿真实验的结果,冷却剂的流速优选可以为0.6m/s至1.5m/s。In the first aspect, the heat dissipation effect of the heat dissipation system provided by the present invention can be determined by the flow rate of the coolant. Through simulation experiments, it was found that the faster the coolant flow rate, the better the heat dissipation effect of the heat dissipation system. However, when the coolant flow rate reaches a critical value, even if the coolant flow rate continues to be increased, it is difficult to continue to improve the heat dissipation effect of the heat dissipation system. According to the results of the simulation experiment, the flow rate of the coolant may preferably be 0.6m/s to 1.5m/s.

此外,根据仿真实验的结果,散热系统在靠近冷却剂入口104的第一侧的温度更低,在靠近冷却剂出口104的第二侧的温度更高,这是由于冷却剂在流动过程中逐渐吸收所述晶粒108产生的热量导致的。在本发明的实施例中,在靠近冷却剂出口104的第二侧的热点温度最高达到70摄氏度,能够很好地满足功率密度为25kW的多芯片互联的晶圆级芯片的散热需求,并且热点温度不超过70摄氏度。In addition, according to the results of the simulation experiment, the temperature of the heat dissipation system is lower on the first side close to the coolant inlet 104 and the temperature is higher on the second side close to the coolant outlet 104. This is because the coolant gradually flows during the flow process. This is caused by absorbing the heat generated by the crystal grains 108 . In the embodiment of the present invention, the temperature of the hot spot on the second side close to the coolant outlet 104 reaches a maximum of 70 degrees Celsius, which can well meet the heat dissipation requirements of a multi-chip interconnected wafer-level chip with a power density of 25 kW, and the hot spot The temperature does not exceed 70 degrees Celsius.

根据仿真实验的结果,在靠近散热系统的第一侧的晶粒108的温度更低,靠近散热系统的第二侧的晶粒108的温度更高。因此在本发明的另一实施例中,为了提高芯片的温度均匀性,可以通过在芯片上方的不同位置布置散热能力不同的散热元件107,具体来说,布置在靠近散热系统的第二侧的位置处的散热元件107的散热能力高于靠近散热系统的第一侧的位置处的散热元件107的散热能力,进而可以提高芯片的温度均匀性。According to the results of the simulation experiment, the temperature of the die 108 on the first side close to the heat dissipation system is lower, and the temperature of the die 108 close to the second side of the heat dissipation system is higher. Therefore, in another embodiment of the present invention, in order to improve the temperature uniformity of the chip, heat dissipation elements 107 with different heat dissipation capabilities can be arranged at different positions above the chip. Specifically, heat dissipation elements 107 are arranged close to the second side of the heat dissipation system. The heat dissipation capacity of the heat dissipation element 107 at the position is higher than the heat dissipation capacity of the heat dissipation element 107 at the position close to the first side of the heat dissipation system, thereby improving the temperature uniformity of the chip.

在本发明中,散热元件107的散热能力由散热元件107的结构来决定。图4示出了本发明一个实施例中不同结构的散热元件的示意图。如图4所示,所述散热元件107可以仅包括翅片302,或者所述散热元件107可以包括翅针301以及翅片302,或者所述散热元件107可以仅包括翅针301,其中仅包括翅针301的散热元件107的散热能力高于包括翅针301以及翅片302的散热元件107的散热能力,并且包括翅针301以及翅片302的散热元件107的散热能力高于仅包括翅片302的散热元件107的散热能力。In the present invention, the heat dissipation capability of the heat dissipation element 107 is determined by the structure of the heat dissipation element 107 . Figure 4 shows a schematic diagram of heat dissipation elements with different structures in one embodiment of the present invention. As shown in FIG. 4 , the heat dissipation element 107 may only include fins 302 , or the heat dissipation element 107 may include fin pins 301 and fins 302 , or the heat dissipation element 107 may only include fin pins 301 , which only include The heat dissipation capacity of the heat dissipation element 107 of the fin pins 301 is higher than that of the heat dissipation element 107 including the fin pins 301 and fins 302, and the heat dissipation capacity of the heat dissipation element 107 including the fin pins 301 and fins 302 is higher than that of the heat dissipation element 107 including only the fins. The heat dissipation capacity of the heat dissipation element 107 is 302.

如图5A示出了本发明另一实施例中不同结构的散热元件的示意图。图5B示出了本发明另一实施例中不同结构的散热元件的平面示意图。如图5A-B所示,在仅包括翅片302的散热元件107中,所述翅片302可以是直线形翅片501、波浪形翅片502或者锯齿形翅片503,其中具有锯齿形翅片503的散热元件107的散热能力高于具有波浪形翅片502的散热元件107的散热能力,并且具有波浪形翅片502的散热元件107的散热能力高于具有直线形翅片501的散热元件107的散热能力。FIG. 5A shows a schematic diagram of heat dissipation elements with different structures in another embodiment of the present invention. FIG. 5B shows a schematic plan view of a heat dissipation element with different structures in another embodiment of the present invention. As shown in FIG. 5A-B, in the heat dissipation element 107 including only fins 302, the fins 302 can be linear fins 501, wavy fins 502 or zigzag fins 503, wherein there are zigzag fins. The heat dissipation capacity of the heat dissipation element 107 with the fins 503 is higher than that of the heat dissipation element 107 with the corrugated fins 502, and the heat dissipation capacity of the heat dissipation element 107 with the corrugated fins 502 is higher than that of the heat dissipation element with the straight fins 501 107 heat dissipation capacity.

图6示出了本发明另一实施例中不同结构的散热元件的示意图。如图6所示,在仅包括翅针301的散热元件107中,所述翅针301可以对齐排布或者交错排布,其中翅针301交错排布的散热元件107的散热能力高于翅针301对称排布的散热元件107的散热能力。进一步地,也可以将翅针301的形状由圆柱替换为方柱或者其它的结构,其中方柱翅针的散热能力高于圆柱翅针的散热能力。进一步地,可以通过调节翅针301的直径大小以及多个翅针301之间的间距来调节散热元件的散热能力,其中翅针301的直径越小、多个翅针301之间的间距越小,散热元件的散热能力越高。进一步地,可以通过调节翅针301的直径大小以及多个翅针301之间的间距来调节散热元件的散热能力。Figure 6 shows a schematic diagram of a heat dissipation element with different structures in another embodiment of the present invention. As shown in FIG. 6 , in the heat dissipation element 107 that only includes fin pins 301 , the fin pins 301 can be arranged in an aligned or staggered arrangement. The heat dissipation capacity of the heat dissipation element 107 in which the fin pins 301 are staggered is higher than that of the fin pins. 301 The heat dissipation capability of the symmetrically arranged heat dissipation elements 107. Furthermore, the shape of the fin pins 301 can also be replaced from a cylinder to a square pillar or other structure, where the heat dissipation capacity of the square column fin pins is higher than that of the cylindrical fin pins. Further, the heat dissipation capacity of the heat dissipation element can be adjusted by adjusting the diameter of the fin pins 301 and the spacing between the plurality of fin pins 301. The smaller the diameter of the fin pins 301, the smaller the spacing between the plurality of fin pins 301. , the higher the heat dissipation capacity of the cooling element. Furthermore, the heat dissipation capacity of the heat dissipation element can be adjusted by adjusting the diameter of the fin pins 301 and the spacing between the plurality of fin pins 301 .

图8示出了本发明一个实施例中一个具有多个相同的散热元件的散热系统的仿真实验温度示意图。如图8所示,在散热单元相同的情况下,散热系统的均温性比较差,高热源区温差可达15℃,底热源区温差可达18℃C。Figure 8 shows a schematic temperature diagram of a simulation experiment of a heat dissipation system with multiple identical heat dissipation elements in one embodiment of the present invention. As shown in Figure 8, when the heat dissipation unit is the same, the temperature uniformity of the heat dissipation system is relatively poor. The temperature difference in the high heat source area can reach 15°C, and the temperature difference in the bottom heat source area can reach 18°C.

图10示出了本发明一个实施例中一个改善多芯片互联结构的均温性的方法的流程示意图,如图10所示,该方法可以包括下列步骤:Figure 10 shows a schematic flow chart of a method for improving the temperature uniformity of a multi-chip interconnect structure in an embodiment of the present invention. As shown in Figure 10, the method may include the following steps:

步骤1001、在基板106上布置多个散热元件107以形成散热层102,其中布置在靠近散热层102的第二侧的位置处的散热元件107的散热能力高于靠近布置在靠近散热层102的第一侧的位置处的散热元件107的散热能力。Step 1001. Arrange a plurality of heat dissipation elements 107 on the substrate 106 to form a heat dissipation layer 102, wherein the heat dissipation ability of the heat dissipation elements 107 arranged close to the second side of the heat dissipation layer 102 is higher than that of the heat dissipation elements 107 arranged close to the heat dissipation layer 102. The heat dissipation capability of the heat dissipation element 107 at the location of the first side.

步骤1002、将所述散热层102布置在芯片互联层103上,其中所述芯片互联层103包括多个晶粒108。Step 1002: Arrange the heat dissipation layer 102 on the chip interconnection layer 103, where the chip interconnection layer 103 includes a plurality of dies 108.

步骤1003、将盖板层101布置在所述散热层102上,其中由所述散热层102将所述芯片互联层103产生的热量传导至所述盖板层101,并且由所述盖板层101与所述散热层102进行换热。Step 1003: Arrange the cover layer 101 on the heat dissipation layer 102, wherein the heat dissipation layer 102 conducts the heat generated by the chip interconnect layer 103 to the cover layer 101, and the cover layer 101 exchanges heat with the heat dissipation layer 102.

根据该方法,可以从散热系统从第一侧到第二侧依次布置散热能力越来越高的散热元件107。图7A-G示出了本发明一个实施例中散热系统从第一侧到第二侧的一列散热元件的示意图。如图7A-G所示,在如图1所示的设置有7×7的散热元件107的散热系统中,一列的7个散热元件从第一侧到第二侧依次为第一散热元件701、第二散热元件702……第七散热元件707。其中第一散热元件701的散热能力也最弱,从第一散热元件701到第七散热元件707通过调节散热元件上的翅针301的直径、间距、形状、排布方式,使得散热元件的散热能力越来越高。将第一至第七散热元件701-707连接后可以形成散热系统的一列散热元件。图11A示出了本发明一个实施例中一列散热元件的结构示意图。图11B示出了本发明一个实施例中一列散热元件的平面示意图。According to this method, the heat dissipation elements 107 with increasingly higher heat dissipation capabilities may be arranged sequentially from the first side to the second side of the heat dissipation system. 7A-G show a schematic diagram of an array of heat dissipation elements from the first side to the second side of the heat dissipation system in one embodiment of the present invention. As shown in Figures 7A-G, in the heat dissipation system provided with 7×7 heat dissipation elements 107 as shown in Figure 1, the seven heat dissipation elements in a row are the first heat dissipation element 701 from the first side to the second side. , the second heat dissipation element 702...the seventh heat dissipation element 707. Among them, the first heat dissipation element 701 also has the weakest heat dissipation ability. From the first heat dissipation element 701 to the seventh heat dissipation element 707, by adjusting the diameter, spacing, shape, and arrangement of the fin pins 301 on the heat dissipation element, the heat dissipation of the heat dissipation element can be improved. The ability is getting higher and higher. After connecting the first to seventh heat dissipation elements 701-707, a row of heat dissipation elements of the heat dissipation system can be formed. FIG. 11A shows a schematic structural diagram of an array of heat dissipation elements in one embodiment of the present invention. Figure 11B shows a schematic plan view of an array of heat dissipation elements in one embodiment of the present invention.

图9示出了本发明一个实施例中一个根据所述改善多芯片互联结构的均温性的方法的散热系统的仿真实验温度示意图。由于散热系统从第一侧到第二侧的方向上热点温度的变化具有对称周期性,因此图9只示出了其中一列散热元件上的仿真实验结果,如图9所示,其中均温性得到了明显改善,高热源区温差只有2℃,底热源区温差只有8℃。Figure 9 shows a schematic temperature diagram of a simulation experiment of a heat dissipation system according to the method for improving the temperature uniformity of a multi-chip interconnect structure in an embodiment of the present invention. Since the change of hot spot temperature in the direction from the first side to the second side of the heat dissipation system has symmetrical periodicity, Figure 9 only shows the simulation experimental results on one row of heat dissipation elements, as shown in Figure 9, where the temperature uniformity Significant improvement has been achieved. The temperature difference in the high heat source area is only 2℃, and the temperature difference in the bottom heat source area is only 8℃.

根据仿真实验,在散热系统从第一侧到第二侧的方向上热点温度的变化具有对称周期性,因此在加工过程中,可以先加工多列相同的散热元件107,然后再将其并列组合成散热效果等同的整体。以图1所示的设置有7×7的散热元件107的散热系统为例,可以将尺寸例如为196mm×196mm×9mm的单元拆分成7个196mm×28mm×9mm的单元再组合在一起。According to simulation experiments, the change of hot spot temperature in the direction from the first side to the second side of the heat dissipation system has a symmetrical periodicity. Therefore, during the processing process, multiple rows of identical heat dissipation elements 107 can be processed first and then combined in parallel. into a whole with the same heat dissipation effect. Taking the heat dissipation system provided with 7×7 heat dissipation elements 107 shown in FIG. 1 as an example, a unit with a size of, for example, 196 mm×196 mm×9 mm can be split into seven units of 196 mm×28 mm×9 mm and then combined together.

此外,对于功率密度更高的芯片,例如功率密度为50W/cm2至500W/cm2的芯片,所述散热元件107可以使用微流道结构,对于功率密度为1000W/cm2以上的芯片,所述散热元件107可以使用多相、空气气泡对流的结构。In addition, for chips with a higher power density, such as chips with a power density of 50W/cm2 to 500W/cm2, the heat dissipation element 107 can use a microfluidic structure. For chips with a power density of 1000W/cm2 or above, the heat dissipation element 107 Element 107 may use a multi-phase, air bubble convection structure.

尽管上文描述了本发明的各实施例,但是,应该理解,它们只是作为示例来呈现的,而不作为限制。对于相关领域的技术人员显而易见的是,可以对其做出各种组合、变型和改变而不背离本发明的精神和范围。因此,此处所公开的本发明的宽度和范围不应被上述所公开的示例性实施例所限制,而应当仅根据所附权利要求书及其等同替换来定义。Although various embodiments of the present invention are described above, it should be understood that they are presented by way of example only and not by way of limitation. It is obvious to those skilled in the relevant art that various combinations, modifications and changes can be made without departing from the spirit and scope of the invention. Accordingly, the breadth and scope of the invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should be defined solely in accordance with the appended claims and their equivalents.

Claims (10)

1.一种改善多芯片互联结构的均温性的方法,其特征在于,包括下列步骤:1. A method for improving the temperature uniformity of a multi-chip interconnection structure, which is characterized by comprising the following steps: 在基板上布置多个散热元件以形成散热层,其中布置在靠近散热层的第二侧的位置处的散热元件的散热能力高于靠近布置在靠近散热层的与第二侧相对的第一侧的位置处的散热元件的散热能力;A plurality of heat dissipation elements are arranged on the substrate to form a heat dissipation layer, wherein the heat dissipation ability of the heat dissipation elements disposed close to the second side of the heat dissipation layer is higher than that of the heat dissipation element disposed close to the first side opposite to the second side of the heat dissipation layer. The heat dissipation capacity of the heat dissipation element at the location; 将所述散热层布置在芯片互联层上,其中所述芯片互联层包括多个晶粒;以及disposing the heat dissipation layer on a chip interconnect layer, wherein the chip interconnect layer includes a plurality of dies; and 将盖板层布置在所述散热层上,其中由所述散热层将所述芯片互联层产生的热量传导至所述盖板层,并且由所述盖板层与所述散热层进行换热。A cover plate layer is arranged on the heat dissipation layer, wherein the heat dissipation layer conducts the heat generated by the chip interconnection layer to the cover plate layer, and the cover plate layer conducts heat exchange with the heat dissipation layer. . 2.根据权利要求1所述的改善多芯片互联结构的均温性的方法,其特征在于,将所述散热层布置在芯片互联层上包括将多个散热元件的至少之一布置在所述多个晶粒之一之上。2. The method for improving temperature uniformity of a multi-chip interconnection structure according to claim 1, wherein arranging the heat dissipation layer on the chip interconnection layer includes arranging at least one of a plurality of heat dissipation elements on the chip interconnection layer. on one of multiple grains. 3.根据权利要求2所述的改善多芯片互联结构的均温性的方法,其特征在于,将每个散热元件布置在所述多个晶粒之一之上。3. The method for improving temperature uniformity of a multi-chip interconnection structure according to claim 2, wherein each heat dissipation element is arranged on one of the plurality of dies. 4.根据权利要求1所述的改善多芯片互联结构的均温性的方法,其特征在于,由所述盖板层与所述散热层进行换热包括:4. The method for improving the temperature uniformity of a multi-chip interconnection structure according to claim 1, wherein the heat exchange between the cover layer and the heat dissipation layer includes: 在所述盖板层的第一侧设置冷却剂入口,其中所述盖板层的第一侧与所述散热层的第一侧对应;A coolant inlet is provided on a first side of the cover layer, wherein the first side of the cover layer corresponds to the first side of the heat dissipation layer; 在所述盖板层的第二侧设置冷却剂出口,所述盖板层的第二侧与所述散热层的第一侧对应;以及A coolant outlet is provided on a second side of the cover layer, the second side of the cover layer corresponding to the first side of the heat dissipation layer; and 使冷却剂由所述盖板层的第一侧流向第二侧同时与所述散热层进行换热,并且从所述冷却剂出口流出。The coolant flows from the first side to the second side of the cover layer while exchanging heat with the heat dissipation layer, and flows out from the coolant outlet. 5.根据权利要求1所述的改善多芯片互联结构的均温性的方法,其特征在于,还包括:5. The method for improving the temperature uniformity of a multi-chip interconnection structure according to claim 1, further comprising: 在所述基板与所述芯片互联层之间设置导热层,其中所述导热层被配置为将所述晶粒产生的热量传导至所述散热元件。A thermal conductive layer is provided between the substrate and the chip interconnect layer, wherein the thermal conductive layer is configured to conduct heat generated by the die to the heat dissipation element. 6.根据权利要求1所述的改善多芯片互联结构的均温性的方法,其特征在于,将多个散热元件构造为具有不同的结构以具有不同的散热能力。6. The method for improving temperature uniformity of a multi-chip interconnection structure according to claim 1, characterized in that a plurality of heat dissipation elements are configured to have different structures to have different heat dissipation capabilities. 7.根据权利要求6所述的改善多芯片互联结构的均温性的方法,其特征在于,将多个散热元件构造为具有不同的结构包括:7. The method for improving temperature uniformity of a multi-chip interconnection structure according to claim 6, wherein configuring multiple heat dissipation elements to have different structures includes: 将多个所述散热元件构造为包括直线形翅片、波浪形翅片或者锯齿形翅片,其中所述锯齿形翅片的散热能力大于所述波浪形翅片的散热能力,并且所述波浪形翅片的散热能力大于所述直线形翅片的散热能力。A plurality of the heat dissipation elements are configured to include linear fins, wavy fins or zigzag fins, wherein the heat dissipation capacity of the zigzag fins is greater than the heat dissipation capacity of the wavy fins, and the wavy fins The heat dissipation capacity of the linear fins is greater than the heat dissipation capacity of the linear fins. 8.根据权利要求7所述的改善多芯片互联结构的均温性的方法,其特征在于,将多个散热元件构造为具有不同的结构包括:8. The method for improving the temperature uniformity of a multi-chip interconnection structure according to claim 7, wherein configuring multiple heat dissipation elements to have different structures includes: 将多个所述散热元件构造为由多个翅片组成、由多个翅片和翅针组成、或者由多个翅针组成,其中所述翅针的散热能力大于所述翅片的散热能力。A plurality of the heat dissipation elements is configured to consist of a plurality of fins, a plurality of fins and fin pins, or a plurality of fin pins, wherein the heat dissipation capacity of the fin pins is greater than the heat dissipation capacity of the fins. . 9.根据权利要求8所述的改善多芯片互联结构的均温性的方法,其特征在于,将多个散热元件构造为具有不同的结构包括:9. The method for improving temperature uniformity of a multi-chip interconnection structure according to claim 8, wherein configuring multiple heat dissipation elements to have different structures includes: 将多个所述散热元件构造为包括不同形状的翅针,所述翅针的形状包括圆柱形以及方柱形,其中方柱形翅针的散热能力大于所述圆柱形翅针的散热能力;和\或Constructing a plurality of the heat dissipation elements to include fin pins of different shapes, the shapes of the fin pins including cylindrical and square cylindrical fins, wherein the heat dissipation capacity of the square cylindrical fin pins is greater than the heat dissipation capacity of the cylindrical fin pins; and / or 将多个所述散热元件构造为包括不同尺寸的翅针,其中多个第一尺寸翅针的散热能力大于多个第二尺寸翅针的散热能力,所述第一尺寸小于所述第二尺寸;和\或A plurality of the heat dissipation elements are configured to include fins of different sizes, wherein a plurality of first size fins has a heat dissipation capacity greater than a plurality of second size fins, the first size being smaller than the second size. ;and / or 将多个所述散热元件构造为包括不同间距的翅针,其中多个距离第一间距的翅针的散热能力大于多个距离第二间距的翅针的散热能力,所述第一间距小于所述第二间距。A plurality of the heat dissipation elements are configured to include fin pins with different spacing, wherein the heat dissipation capacity of the fin pins at a first spacing is greater than the heat dissipation capacity of the fin pins at a second spacing, and the first spacing is smaller than the fin pins. Describe the second distance. 10.一种改善多芯片互联结构的均温性的系统,其特征在于,包括:10. A system for improving the temperature uniformity of a multi-chip interconnection structure, which is characterized by including: 芯片互联层,其包括多个晶粒;a chip interconnect layer, which includes multiple dies; 散热层,其布置在所述芯片互联层上,所述散热层包括多个散热元件,其中布置在靠近散热层的第二侧的位置处的散热元件的散热能力高于靠近布置在靠近散热层的第一侧的位置处的散热元件的散热能力;以及a heat dissipation layer disposed on the chip interconnect layer, the heat dissipation layer comprising a plurality of heat dissipation elements, wherein the heat dissipation element disposed close to the second side of the heat dissipation layer has a higher heat dissipation capacity than the heat dissipation element disposed close to the heat dissipation layer the heat dissipation capacity of the heat dissipation element at the location of the first side; and 盖板层,其布置在所述散热层上,其中所述散热层将所述芯片互联层产生的热量传导至所述盖板层,并且所述盖板层与所述散热层进行换热。A cover plate layer is arranged on the heat dissipation layer, wherein the heat dissipation layer conducts the heat generated by the chip interconnect layer to the cover plate layer, and the cover plate layer exchanges heat with the heat dissipation layer.
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