CN116770231A - Evaporation device for photomultiplier tube coating and its manufacturing method and device, as well as evaporation method and device for optical window coating - Google Patents
Evaporation device for photomultiplier tube coating and its manufacturing method and device, as well as evaporation method and device for optical window coating Download PDFInfo
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- CN116770231A CN116770231A CN202310586122.2A CN202310586122A CN116770231A CN 116770231 A CN116770231 A CN 116770231A CN 202310586122 A CN202310586122 A CN 202310586122A CN 116770231 A CN116770231 A CN 116770231A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 368
- 230000008020 evaporation Effects 0.000 title claims abstract description 351
- 238000000576 coating method Methods 0.000 title claims abstract description 127
- 239000011248 coating agent Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 230000003287 optical effect Effects 0.000 title abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 79
- 239000011521 glass Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 229910052787 antimony Inorganic materials 0.000 claims description 31
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 31
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 17
- 238000007740 vapor deposition Methods 0.000 claims description 13
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- 239000011572 manganese Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- 239000013077 target material Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims 2
- 238000009501 film coating Methods 0.000 claims 2
- 239000000919 ceramic Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 97
- 239000010408 film Substances 0.000 description 90
- 238000010586 diagram Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 7
- 239000011324 bead Substances 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000001994 activation Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 cesium alkali metals Chemical class 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- Chemical & Material Sciences (AREA)
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- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明涉及光电倍增管加工技术领域,具体而言涉及用于光电倍增管镀膜的蒸镀装置及其制作方法、装置以及光窗镀膜的蒸镀方法、装置,包括:蒸发电极,包括正极以及负极;蒸发源结构,所述蒸发源结构的第一端连接到所述正极,所述蒸发源结构的第二端连接到所述负极;蒸发材料层,连接到所述蒸发源结构;其中,所述蒸发源结构包括蒸发面,所述蒸发材料层连接到所述蒸发面。利用面蒸发源的优势提升其镀膜的均匀性,从而提升器件的量子效率均匀性。且片状面蒸镀装置镀膜方向仅朝向玻璃光窗,其他方向被其自身蒸发源薄片挡住,不会蒸镀到陶瓷等不需要镀膜的位置,可改善整管的噪声特性。
The present invention relates to the technical field of photomultiplier tube processing, and specifically to an evaporation device for photomultiplier tube coating and its manufacturing method and device, as well as an evaporation method and device for optical window coating, including: evaporation electrodes, including positive electrodes and negative electrodes. ; Evaporation source structure, the first end of the evaporation source structure is connected to the positive electrode, and the second end of the evaporation source structure is connected to the negative electrode; the evaporation material layer is connected to the evaporation source structure; wherein, The evaporation source structure includes an evaporation surface, and the evaporation material layer is connected to the evaporation surface. The advantages of the surface evaporation source are used to improve the uniformity of the coating, thereby improving the uniformity of the quantum efficiency of the device. Moreover, the coating direction of the sheet surface evaporation device only faces the glass light window, and other directions are blocked by its own evaporation source sheet. It will not evaporate to locations such as ceramics that do not require coating, which can improve the noise characteristics of the entire tube.
Description
技术领域Technical field
本发明涉及光电倍增管加工技术领域,具体而言涉及用于光电倍增管镀膜的蒸镀装置及其制作方法、装置以及光窗镀膜的蒸镀方法、装置。The present invention relates to the technical field of photomultiplier tube processing, and specifically to an evaporation device for photomultiplier tube coating and its manufacturing method and device, as well as an evaporation method and device for optical window coating.
背景技术Background technique
光电倍增管光窗上的膜层包含增透膜和光电阴极薄膜。阴极量子效率是决定其光电探测能力的关键性能指标之一。光电倍增管阴极制作的关键是光学增透膜和光电发射膜层镀制。增透膜和光电发射膜层的膜层厚度很大程度决定了阴极量子效率高低,因此增透膜和光电发射膜层的膜厚均匀性也决定了阴极量子效率的均一性。The coating layer on the light window of the photomultiplier tube includes anti-reflection coating and photocathode film. Cathode quantum efficiency is one of the key performance indicators that determines its photodetection capabilities. The key to the production of photomultiplier tube cathodes is the plating of optical anti-reflection coatings and photoelectric emission coatings. The thickness of the antireflection coating and the photoelectric emission coating largely determines the cathode quantum efficiency. Therefore, the uniformity of the thickness of the antireflection coating and the photoelectric emission coating also determines the uniformity of the cathode quantum efficiency.
结合图1所示,传统阴极制作增透膜制备方法:以钽丝负载金属锰球作为蒸镀装置,给钽丝加载电流使其发热将金属球蒸镀到光电倍增管的玻璃光窗上,并通氧气进行氧化以获得金属氧化物增透膜。类似地,光电发射膜层的制作则以镍丝或覆铂钼丝负载金属锑球作为蒸镀装置,加载电流使锑珠蒸镀到玻璃光窗上。As shown in Figure 1, the traditional anti-reflection film preparation method for cathode production: using tantalum wire loaded with metal manganese balls as an evaporation device, loading the tantalum wire with current to cause it to heat up, and evaporating the metal balls onto the glass window of the photomultiplier tube. And oxygen is passed through for oxidation to obtain a metal oxide antireflection coating. Similarly, the production of photoelectric emission film layer uses nickel wire or platinum-coated molybdenum wire to load metal antimony balls as an evaporation device, and a current is applied to evaporate the antimony beads onto the glass light window.
上述增透膜和锑膜蒸镀方法均采用点蒸发源作为蒸镀装置,这种蒸镀方法距离点蒸发源较近位置往往膜层比较厚,因此在膜厚均匀性上存在较大差异。其次,球形蒸发源的镀膜的方向无选择性,往往会在将膜层镀到玻璃光窗的同时,也会将膜层镀到光电倍增管的陶瓷片、玻璃壁、聚焦极等位置,造成器件的极间欧姆漏电和热电子发射噪声变大等问题。The above antireflection coating and antimony film evaporation methods all use point evaporation sources as evaporation devices. In this evaporation method, the film layer is often thicker at locations closer to the point evaporation source, so there is a large difference in film thickness uniformity. Secondly, the direction of the coating of the spherical evaporation source is not selective. When the film is coated on the glass window, the film is also coated on the ceramic sheet, glass wall, focusing pole and other positions of the photomultiplier tube, resulting in Problems such as inter-electrode ohmic leakage of the device and increased thermal electron emission noise.
发明内容Contents of the invention
本发明提出第一方面提出一种技术方案,一种用于光电倍增管镀膜的蒸镀装置,包括:The first aspect of the present invention proposes a technical solution, an evaporation device for photomultiplier tube coating, including:
蒸发电极,包括正极以及负极;Evaporation electrodes, including positive and negative electrodes;
蒸发源结构,所述蒸发源结构的第一端连接到所述正极,所述蒸发源结构的第二端连接到所述负极;An evaporation source structure, a first end of the evaporation source structure is connected to the positive electrode, and a second end of the evaporation source structure is connected to the negative electrode;
蒸发材料层,连接到所述蒸发源结构;a layer of evaporation material connected to the evaporation source structure;
其中,所述蒸发源结构包括蒸发面,所述蒸发材料层连接到所述蒸发面,所述蒸发面向着待镀膜结构的方向,且由蒸发面向着待镀膜结构的方向,所述蒸发材料层的厚度相同;Wherein, the evaporation source structure includes an evaporation surface, the evaporation material layer is connected to the evaporation surface, the evaporation surface faces the direction of the structure to be coated, and the evaporation surface faces the direction of the structure to be coated, the evaporation material layer The thickness is the same;
当所述正极和负极连接到驱动电路时,蒸发源结构发热,使所述蒸发材料层蒸发在待镀膜结构表面形成镀层。When the positive electrode and the negative electrode are connected to the driving circuit, the evaporation source structure generates heat, causing the evaporation material layer to evaporate to form a coating layer on the surface of the structure to be coated.
优选的,所述蒸发材料层的形状与待镀膜结构的形状相匹配。Preferably, the shape of the evaporated material layer matches the shape of the structure to be coated.
优选的,所述蒸发源结构被构造成片状,所述片状的蒸发源结构设有所述蒸发面,所述蒸发面的形状与待镀膜结构的形状相匹配,所述蒸发源结构的厚度均匀。Preferably, the evaporation source structure is constructed in a sheet shape, and the sheet-shaped evaporation source structure is provided with the evaporation surface. The shape of the evaporation surface matches the shape of the structure to be coated. The evaporation source structure has Uniform thickness.
优选的,所述蒸发源结构被构造成半圆环型或直角条形。Preferably, the evaporation source structure is configured in a semicircular ring shape or a right-angled strip shape.
优选的,所述蒸发源结构被设置成一对,并对称的布置,两个所述蒸发源结构并联的连接到所述驱动电路。Preferably, the evaporation source structures are arranged in a pair and are arranged symmetrically, and two evaporation source structures are connected to the driving circuit in parallel.
优选的,所述蒸发源结构包括钽、钨或铂材料。Preferably, the evaporation source structure includes tantalum, tungsten or platinum materials.
优选的,所述蒸发材料层以磁控溅射或电子束蒸镀的方式蒸镀到所述蒸发源结构的蒸发面。Preferably, the evaporation material layer is evaporated onto the evaporation surface of the evaporation source structure by magnetron sputtering or electron beam evaporation.
本发明第二方面提出一种技术方案,一种用于光电倍增管镀膜的蒸镀装置的制作方法,其特征在于,包括以下步骤:A second aspect of the present invention proposes a technical solution, a method for manufacturing an evaporation device for photomultiplier tube coating, which is characterized in that it includes the following steps:
S1、制作蒸发源结构:S1. Make the evaporation source structure:
S11、根据待镀膜结构的形状,形成与待镀膜结构形状像匹配的金属薄片;S11. According to the shape of the structure to be coated, form a metal sheet that matches the shape of the structure to be coated;
S2、制作蒸发材料层:S2. Make the evaporation material layer:
步骤S21、根据待镀膜结构的镀膜工艺厚度,通过高精度的镀膜方法将蒸发材料预先蒸镀到金属薄片的表面,并形成预定的厚度;Step S21: Pre-evaporate the evaporation material onto the surface of the metal sheet through a high-precision coating method according to the thickness of the coating process of the structure to be coated, and form a predetermined thickness;
其中,高精度的镀膜方法包括磁控溅射或电子束蒸镀。Among them, high-precision coating methods include magnetron sputtering or electron beam evaporation.
优选的,在步骤S21中,对蒸发材料的厚度控制包括以下步骤:Preferably, in step S21, controlling the thickness of the evaporated material includes the following steps:
制造真空环境,并充入氩气;Create a vacuum environment and fill it with argon;
控制磁控溅射靶材向预定区域发射镀层材料;Control the magnetron sputtering target to emit coating material to a predetermined area;
蒸发源结构以预定的速度,往复的通过靶材溅射的区域;The evaporation source structure reciprocates through the target sputtering area at a predetermined speed;
其中,控制蒸发源结构通过靶材溅射的速度和次数,使蒸发源结构表面形成的蒸发材料层厚度达到目标厚度。Among them, the speed and number of sputtering of the evaporation source structure through the target material are controlled so that the thickness of the evaporation material layer formed on the surface of the evaporation source structure reaches the target thickness.
本发明第三方面提出一种技术方案,一种用于光电倍增管镀膜的蒸镀装置的制作装置,包括:The third aspect of the present invention proposes a technical solution, a manufacturing device for an evaporation device for photomultiplier tube coating, including:
镀膜机腔,所述镀膜机腔用于构造镀膜环境;Coating machine cavity, the coating machine cavity is used to construct a coating environment;
磁控溅射靶材,设置在所述镀膜机腔内,所述磁控溅射靶材用于向溅射区域发射镀膜材料;A magnetron sputtering target is arranged in the coating machine cavity, and the magnetron sputtering target is used to emit coating material to the sputtering area;
轨道,设置到所述镀膜机腔中,并经过所述溅射区域;A track is set into the coating machine cavity and passes through the sputtering area;
托盘,用于盛放多个所述蒸发源结构,所述托盘连接到轨道,所述托盘能沿所述轨道往复运动,以进入或脱离磁控溅射靶材的溅射区域;A tray for holding a plurality of the evaporation source structures, the tray is connected to a track, and the tray can reciprocate along the track to enter or leave the sputtering area of the magnetron sputtering target;
其中,所述轨道被设置成能驱动所述托盘以预定的速度经过所述溅射区域,以控制所述蒸发源结构在溅射区域所处的时长。Wherein, the track is configured to drive the tray through the sputtering area at a predetermined speed to control the length of time the evaporation source structure is in the sputtering area.
本发明第四方面提出一种技术方案,一种用于光电倍增管光窗镀膜的蒸镀方法,包括以下步骤:The fourth aspect of the present invention proposes a technical solution, an evaporation method for photomultiplier tube optical window coating, which includes the following steps:
步骤a、按照上述的用于光电倍增管镀膜的蒸镀装置的制作方法制造形成第一膜层蒸镀装置和第二膜层蒸镀装置;Step a. Manufacture and form a first film layer evaporation device and a second film layer evaporation device according to the above-mentioned manufacturing method of an evaporation device for photomultiplier tube coating;
步骤b、将第一膜层蒸镀装置和第二膜层蒸镀装置的正极分别连接到第一正极接线柱和第二正极接线柱,第一膜层蒸镀装置和第二膜层蒸镀装置的负极连接到光电倍增管的聚焦极;Step b. Connect the positive electrodes of the first film layer evaporation device and the second film layer evaporation device to the first positive electrode terminal and the second positive electrode terminal respectively. The first film layer evaporation device and the second film layer evaporation device The negative electrode of the device is connected to the focusing electrode of the photomultiplier tube;
步骤c、向第一正极接线柱以及光电倍增管的聚焦极加载电流,使光窗表面形成第一膜层,再向第二正极接线柱以及光电倍增管的聚焦极加载电流,使光窗表面形成第二膜层;Step c. Load current to the first positive terminal and the focusing electrode of the photomultiplier tube to form a first film layer on the surface of the light window, and then load current to the second positive terminal and the focusing electrode of the photomultiplier tube to form a first film layer on the surface of the light window. Form a second film layer;
其中,第一蒸镀装置的金属靶材包括锰、钛,第二蒸镀装置的金属靶材包括锑、碲。Wherein, the metal target material of the first evaporation device includes manganese and titanium, and the metal target material of the second evaporation device includes antimony and tellurium.
优选的,制备第一膜层蒸镀装置时,按照以下工艺:锰靶溅射功率设定为15~20W/cm2,工件盘的运动速度为6mm/s,往复次数为4~5次;Preferably, when preparing the first film layer evaporation device, the following process is followed: the manganese target sputtering power is set to 15-20W/cm 2 , the movement speed of the workpiece disk is 6mm/s, and the number of reciprocations is 4-5 times;
制备第二膜层蒸镀装置时,按照以下工艺:锑靶溅射功率设定为10~15W/cm2,工件盘的运动速度为8mm/s,往复次数为3~4次。When preparing the second film layer evaporation device, follow the following process: the antimony target sputtering power is set to 10-15W/cm 2 , the movement speed of the workpiece disk is 8mm/s, and the number of reciprocations is 3-4 times.
本发明第五方面提出一种技术方案,一种用于光电倍增管光窗镀膜的蒸镀装置,包括:The fifth aspect of the present invention proposes a technical solution, an evaporation device for photomultiplier tube optical window coating, including:
光电倍增管的聚焦极;The focusing electrode of the photomultiplier tube;
玻璃光窗;glass light windows;
第一膜层蒸镀装置,包括一对上述的用于光电倍增管镀膜的蒸镀装置;The first film layer evaporation device includes a pair of the above-mentioned evaporation devices for photomultiplier tube coating;
第二膜层蒸镀装置,包括一对上述的用于光电倍增管镀膜的蒸镀装置;The second film layer evaporation device includes a pair of the above-mentioned evaporation devices for photomultiplier tube coating;
两个正极接线柱,连接到所述光电倍增管的聚焦极;Two positive terminals, connected to the focusing electrode of the photomultiplier tube;
所述第一膜层蒸镀装置的第一端通过正极引线连接到第一正极接线柱,第二端连接到光电倍增管的聚焦极;The first end of the first film layer evaporation device is connected to the first positive terminal through the positive lead, and the second end is connected to the focusing electrode of the photomultiplier tube;
所述第二膜层蒸镀装置的第一端通过正极引线连接到第二正极接线柱,第二端连接到光电倍增管的聚焦极;The first end of the second film layer evaporation device is connected to the second positive terminal through the positive lead, and the second end is connected to the focusing electrode of the photomultiplier tube;
其中,所述第一膜层蒸镀装置中的一对用于光电倍增管镀膜的蒸镀装置绕玻璃光窗的轴线对称分布;Wherein, a pair of evaporation devices for photomultiplier tube coating in the first film layer evaporation device are symmetrically distributed around the axis of the glass light window;
所述第二膜层蒸镀装置中的一对用于光电倍增管镀膜的蒸镀装置绕玻璃光窗的轴线对称分布。Among the second film layer evaporation devices, a pair of evaporation devices for photomultiplier tube coating are symmetrically distributed around the axis of the glass light window.
与现有技术相比,本发明的优点在于:Compared with the prior art, the advantages of the present invention are:
本发明提出一种片状面蒸镀装置,可根据光电倍增管光窗几何形状灵活调整片状面蒸镀装置的形状,利用面蒸发源的优势提升其镀膜的均匀性,从而提升器件的量子效率均匀性。且片状面蒸镀装置镀膜方向仅朝向玻璃光窗,其他方向被其自身蒸发源薄片挡住,不会蒸镀到陶瓷等不需要镀膜的位置,可改善整管的噪声特性。The present invention proposes a sheet surface evaporation device, which can flexibly adjust the shape of the sheet surface evaporation device according to the geometric shape of the photomultiplier tube light window, and utilizes the advantages of the surface evaporation source to improve the uniformity of its coating, thereby improving the quantum performance of the device. Efficiency uniformity. Moreover, the coating direction of the sheet surface evaporation device only faces the glass light window, and other directions are blocked by its own evaporation source sheet. It will not evaporate to locations such as ceramics that do not require coating, which can improve the noise characteristics of the entire tube.
另外,片状面蒸镀装置上的蒸镀材料是通过磁控溅射或电子束蒸镀预先定量镀到蒸发源片上的,呈现薄膜状态。因此使用片状面蒸镀装置镀膜时,不会出现类似锑珠镀膜那样的炸裂爆出问题,其蒸镀速率和膜厚度都是可控可调的;镀膜完成后,薄片上蒸镀材料几乎都会被蒸发殆尽,因而不会存在蒸镀材料掉落形成异物或造成极间短路的问题,确保器件具备良好的抗冲击震动性能。In addition, the evaporation material on the sheet surface evaporation device is pre- quantitatively deposited on the evaporation source sheet through magnetron sputtering or electron beam evaporation, and is in a thin film state. Therefore, when using a sheet surface evaporation device for coating, there will be no explosion problems like antimony bead coating, and the evaporation rate and film thickness are controllable and adjustable; after the coating is completed, the evaporation material on the sheet is almost All will be evaporated, so there will be no problem of evaporated materials falling to form foreign matter or causing short circuit between electrodes, ensuring that the device has good impact and vibration resistance.
附图说明Description of drawings
附图不意在按比例绘制。在附图中,在各个图中示出的每个相同或近似相同的组成部分可以用相同的标号表示。为了清晰起见,在每个图中,并非每个组成部分均被标记。现在,将通过例子并参考附图来描述本发明的各个方面的实施例,其中:The drawings are not intended to be drawn to scale. In the drawings, each identical or approximately identical component shown in various figures may be designated by the same reference numeral. For clarity, not every component is labeled in each figure. Embodiments of various aspects of the invention will now be described by way of example and with reference to the accompanying drawings, in which:
图1是现有技术中采用点蒸发源作为蒸镀装置对玻璃光窗进行镀膜的示意图;Figure 1 is a schematic diagram of using a point evaporation source as an evaporation device to coat a glass light window in the prior art;
图2是本发明所示的蒸镀装置的截面结构示意图;Figure 2 is a schematic cross-sectional structural diagram of the evaporation device shown in the present invention;
图3是本发明所示的蒸镀装置被构造成双半圆环形结构的示意图;Figure 3 is a schematic diagram of the evaporation device shown in the present invention configured as a double semicircular ring structure;
图4是本发明所示的蒸镀装置被构造成双直角条形结构的示意图;Figure 4 is a schematic diagram of the evaporation device shown in the present invention configured as a double right-angled strip structure;
图5是本发明所示的蒸镀装置的制造装置的结构示意图;Figure 5 is a schematic structural diagram of the manufacturing device of the evaporation device shown in the present invention;
图6是本发明所示的用于光电倍增管光窗镀膜的蒸镀装置的结构示意图;Figure 6 is a schematic structural diagram of an evaporation device used for photomultiplier tube light window coating according to the present invention;
图7a是金属丝负载球型蒸发源装置制备光电倍增管量子效率分布图;Figure 7a is a quantum efficiency distribution diagram of a photomultiplier tube prepared by a metal wire-loaded spherical evaporation source device;
图7b是本实施例中制备光电倍增管量子效率分布图。Figure 7b is a quantum efficiency distribution diagram of the photomultiplier tube prepared in this embodiment.
具体实施方式Detailed ways
为了更了解本发明的技术内容,特举具体实施例并配合所附图式说明如下。In order to better understand the technical content of the present invention, specific embodiments are described below along with the accompanying drawings.
结合图1所示,传统阴极制作增透膜制备方法:以钽丝负载金属锰球作为蒸镀装置,给钽丝加载电流使其发热将金属球蒸镀到光电倍增管的玻璃光窗上,并通氧气进行氧化以获得金属氧化物增透膜。类似地,光电发射膜层的制作则以镍丝或覆铂钼丝负载金属锑球作为蒸镀装置,加载电流使锑珠蒸镀到玻璃光窗上。As shown in Figure 1, the traditional anti-reflection film preparation method for cathode production: using tantalum wire loaded with metal manganese balls as an evaporation device, loading the tantalum wire with current to cause it to heat up, and evaporating the metal balls onto the glass window of the photomultiplier tube. And oxygen is passed through for oxidation to obtain a metal oxide antireflection coating. Similarly, the production of photoelectric emission film layer uses nickel wire or platinum-coated molybdenum wire to load metal antimony balls as an evaporation device, and a current is applied to evaporate the antimony beads onto the glass light window.
上述增透膜和锑膜蒸镀方法均采用点蒸发源作为蒸镀装置,这种蒸镀方法距离点蒸发源较近位置往往膜层比较厚,因此在膜厚均匀性上存在较大差异。其次,球形蒸发源的镀膜的方向无选择性,往往会在将膜层镀到玻璃光窗的同时,也会将膜层镀到光电倍增管的陶瓷片、玻璃壁、聚焦极等位置,造成器件的极间欧姆漏电和热电子发射噪声变大等问题。The above antireflection coating and antimony film evaporation methods all use point evaporation sources as evaporation devices. In this evaporation method, the film layer is often thicker at locations closer to the point evaporation source, so there is a large difference in film thickness uniformity. Secondly, the direction of the coating of the spherical evaporation source is not selective. When the film is coated on the glass window, the film is also coated on the ceramic sheet, glass wall, focusing pole and other positions of the photomultiplier tube, resulting in Problems such as inter-electrode ohmic leakage of the device and increased thermal electron emission noise.
再者,以金属球作为蒸发材料镀膜,其蒸镀速率往往不可控,常常会出现金属球爆炸式蒸出或炸裂,从而导致增透膜和金属锑膜的镀膜厚度也不可控。更严重的是,以金属丝覆载金属锑球作为蒸镀装置时,在完成锑膜蒸镀后往往还会剩下大半颗金属锑珠,在后续的光电阴极激活过程中,剩余金属锑球会吸收钾、钠、铯碱金属而急剧膨胀变疏松,无法牢固地粘附在其金属丝。当光电倍增管受到冲击震动时,疏松的锑球就会从金属丝上剥落,形成管内异物并造成极间短路,从而导致器件失效不合格。Furthermore, when metal balls are used as the evaporation material for coating, the evaporation rate is often uncontrollable, and the metal balls often evaporate or explode explosively, resulting in uncontrollable coating thicknesses of antireflection coatings and metal antimony films. What's more serious is that when metal wire-coated metal antimony balls are used as evaporation devices, more than half of the metal antimony balls are often left after the antimony film evaporation is completed. During the subsequent photocathode activation process, the remaining metal antimony balls It will absorb potassium, sodium, and cesium alkali metals and expand rapidly and become loose, unable to adhere firmly to its metal wires. When the photomultiplier tube is subjected to impact and vibration, the loose antimony balls will peel off from the metal wire, forming foreign matter in the tube and causing a short circuit between the electrodes, resulting in device failure and failure.
因此,本申请第一方面提出一种用于光电倍增管镀膜的蒸镀装置,是一种片状面型蒸镀装置,主要利用面蒸发源的特性提升其待镀结构,尤其是光电倍增管光窗的镀膜均匀性,进而提升光电倍增管的量子效率均一性。Therefore, the first aspect of this application proposes an evaporation device for photomultiplier tube coating. It is a sheet-shaped evaporation device that mainly uses the characteristics of the surface evaporation source to improve the structure to be plated, especially the photomultiplier tube. The uniformity of the coating of the light window, thereby improving the uniformity of the quantum efficiency of the photomultiplier tube.
此外,片状面型蒸镀装置可根据光电倍增管光窗形状灵活调整片状面蒸镀装置的形状,以适应不同的光窗形状,例如圆形或矩形光窗。In addition, the shape of the sheet-shaped surface evaporation device can be flexibly adjusted according to the shape of the photomultiplier tube light window to adapt to different light window shapes, such as circular or rectangular light windows.
其次,片状面蒸镀装置镀膜方向仅朝向玻璃光窗,其他方向被其自身蒸发源薄片挡住,不会蒸镀到陶瓷等不需要镀膜的位置,可改善整管的噪声特性。Secondly, the coating direction of the sheet surface evaporation device only faces the glass light window, and other directions are blocked by its own evaporation source sheet. It will not evaporate to locations such as ceramics that do not require coating, which can improve the noise characteristics of the entire tube.
另外,片状面蒸镀装置上的蒸镀材料是通过磁控溅射或电子束蒸镀预先定量镀到蒸发源片上的,因此使用片状面蒸镀装置镀膜时,其蒸镀速率和膜厚度都是可控可调的。In addition, the evaporation material on the sheet surface evaporation device is pre- quantitatively deposited on the evaporation source sheet through magnetron sputtering or electron beam evaporation. Therefore, when using the sheet surface evaporation device for coating, the evaporation rate and film The thickness is controllable and adjustable.
更重要的是,这种片状面蒸镀装置在完成光电倍增管镀膜后,蒸镀材料几乎都会被蒸发殆尽,因而不会存在蒸镀材料掉落形成异物或造成极间短路的问题,确保器件具备良好的抗冲击震动性能。What's more important is that with this sheet-shaped surface evaporation device, after completing the photomultiplier tube coating, the evaporation material will almost all be evaporated, so there will be no problem of the evaporation material falling to form foreign matter or causing an inter-electrode short circuit. Ensure that the device has good impact and vibration resistance.
【用于光电倍增管镀膜的蒸镀装置】[Evaporation device for photomultiplier tube coating]
结合图2-4所示,本发明提出第一方面提出一种技术方案,一种用于光电倍增管镀膜的蒸镀装置,包括蒸发电极、蒸发源结构11和蒸发材料层12,蒸发电极包括正极以及负极,蒸发源结构11的第一端连接到正极,蒸发源结构11的第二端连接到负极,蒸发材料层12连接到蒸发源结构11。As shown in Figures 2-4, the present invention proposes a technical solution in the first aspect, an evaporation device for photomultiplier tube coating, including an evaporation electrode, an evaporation source structure 11 and an evaporation material layer 12. The evaporation electrode includes The positive electrode and the negative electrode, the first end of the evaporation source structure 11 is connected to the positive electrode, the second end of the evaporation source structure 11 is connected to the negative electrode, and the evaporation material layer 12 is connected to the evaporation source structure 11 .
具体的,蒸发源结构11旨在为蒸发材料层12提供蒸发所需要的热量,因此,蒸发源结构11通常是熔点高的金属材料制成,例如钽、钨、铂等金属材料,其被制作成薄片状,两端形成电极,当在两端加载一定的电流后,则蒸发源结构11发热,利用热量将附着在蒸发源结构11表面的蒸发材料层12蒸发。Specifically, the evaporation source structure 11 is intended to provide the evaporation material layer 12 with the heat required for evaporation. Therefore, the evaporation source structure 11 is usually made of a metal material with a high melting point, such as tantalum, tungsten, platinum and other metal materials. into a thin sheet, with electrodes formed at both ends. When a certain current is applied to both ends, the evaporation source structure 11 generates heat, and the evaporation material layer 12 attached to the surface of the evaporation source structure 11 is evaporated using the heat.
其中,蒸发源结构11包括蒸发面,蒸发材料层12连接到蒸发面,蒸发面向着待镀膜结构的方向,且由蒸发面向着待镀膜结构的方向,蒸发材料层的厚度相同。The evaporation source structure 11 includes an evaporation surface, and the evaporation material layer 12 is connected to the evaporation surface. The evaporation surface faces the direction of the structure to be coated, and the thickness of the evaporation material layer is the same from the evaporation surface to the direction of the structure to be coated.
如此,当正极和负极连接到驱动电路时,蒸发源结构11发热,使蒸发材料层12蒸发在待镀膜结构表面形成镀层。In this way, when the positive electrode and the negative electrode are connected to the driving circuit, the evaporation source structure 11 generates heat, causing the evaporation material layer 12 to evaporate to form a coating on the surface of the structure to be coated.
可以理解的,这种面蒸发的形式相较于现有技术中的球形蒸发源,具有方向可控、蒸发量可控的优点。It can be understood that compared with the spherical evaporation source in the prior art, this form of surface evaporation has the advantages of controllable direction and controllable evaporation amount.
另外,根据所镀膜材料的不同,蒸发材料层12的材料不同,对于光窗镀膜而言,一般包括增透膜层和光电发射层,其中,增透膜层一般使用锰、钛、铝等材质,光电发射层一般使用锑、碲、碘等材质,本申请中将制造增透膜层使用的蒸镀装置称为第一膜层蒸镀装置,制造光电发射层使用的蒸镀装置称为第二膜层蒸镀装置。In addition, the evaporation material layer 12 is made of different materials depending on the coating material. For optical window coating, it generally includes an anti-reflection coating layer and a photoelectric emission layer. Among them, the anti-reflection coating layer generally uses manganese, titanium, aluminum and other materials. , the photoelectric emission layer generally uses antimony, tellurium, iodine and other materials. In this application, the evaporation device used to manufacture the anti-reflection coating layer is called the first film layer evaporation device, and the evaporation device used to manufacture the photoelectric emitting layer is called the third film layer evaporation device. Two-layer evaporation device.
进一步的,为了控制蒸发材料准确的附着在待镀膜结构的预定区域,蒸发材料层12的形状与待镀膜结构的形状相匹配。如此,在蒸发源结构11发热后,蒸发材料层12向着蒸发面对应的方向想待镀膜结构运动,并附着在待镀膜结构的对应区域,如此,可准确的控制蒸发材料在待镀膜结构表面形成镀膜覆盖范围。Further, in order to control the evaporation material to accurately adhere to a predetermined area of the structure to be coated, the shape of the evaporation material layer 12 matches the shape of the structure to be coated. In this way, after the evaporation source structure 11 generates heat, the evaporation material layer 12 moves toward the direction corresponding to the evaporation surface toward the structure to be coated, and adheres to the corresponding area of the structure to be coated. In this way, the evaporation material can be accurately controlled on the surface of the structure to be coated. Create coating coverage.
进一步的,为了控制蒸发材料层12均匀受热而蒸发,蒸发源结构11被构造成片状,片状的蒸发源结构设有蒸发面,蒸发面的形状与待镀膜结构的形状相匹配,蒸发源结构11的厚度均匀。Further, in order to control the evaporation material layer 12 to be uniformly heated and evaporate, the evaporation source structure 11 is constructed in a sheet shape. The sheet-shaped evaporation source structure is provided with an evaporation surface, and the shape of the evaporation surface matches the shape of the structure to be coated. The evaporation source The thickness of structure 11 is uniform.
如此,当蒸发源结构11通电后,其表面产生的热量是均匀的,能将整个蒸发面的蒸发材料层12均匀的蒸发出去。In this way, when the evaporation source structure 11 is powered on, the heat generated on its surface is uniform, and the evaporation material layer 12 on the entire evaporation surface can be uniformly evaporated.
在可选的实施例中,对于光电倍增管的圆形或球形光窗,蒸发源结构11以及其表面的蒸发材料层12的形状是形状为双半圆环形,如图3所示对于光电倍增管的方形光窗镀膜,蒸发源结构11以及其表面的蒸发材料层12的形状是直角条形,如图4所示。In an optional embodiment, for the circular or spherical light window of the photomultiplier tube, the shape of the evaporation source structure 11 and the evaporation material layer 12 on its surface is a double semicircular ring shape, as shown in Figure 3 for the photomultiplier tube For the square light window coating, the shape of the evaporation source structure 11 and the evaporation material layer 12 on its surface is a right-angled strip, as shown in Figure 4.
图3所示的是一对半圆环形的第一膜层蒸镀装置100a、100b,其两端分别形成正极101以及负极102,图4所示的是一对直角条形的第一膜层蒸镀装置200a、200b,其两端分别形成正极201以及负极202。Figure 3 shows a pair of semi-circular ring-shaped first film layer evaporation devices 100a and 100b, with positive electrodes 101 and negative electrodes 102 respectively formed at both ends. Figure 4 shows a pair of right-angled strip-shaped first film layer evaporation devices. The two ends of the plating devices 200a and 200b are respectively formed with a positive electrode 201 and a negative electrode 202.
优选的,蒸发源结构11被设置成一对,并对称的布置,两个蒸发源结构11并联的连接到驱动电路。Preferably, the evaporation source structures 11 are arranged in a pair and are arranged symmetrically, and the two evaporation source structures 11 are connected to the driving circuit in parallel.
如此,有利于使两个蒸发源结构11的热量达到一致,并能高效的将蒸发材料层12蒸发到光窗的表面形成镀膜。In this way, the heat of the two evaporation source structures 11 can be consistent, and the evaporation material layer 12 can be efficiently evaporated to the surface of the light window to form a coating.
在上述的实施例中,为了准确的控制蒸发材料层12的厚度,即镀膜所需要的蒸发材料的量,蒸发材料层12以磁控溅射或电子束蒸镀的方式蒸镀到蒸发源结构11的蒸发面。In the above embodiment, in order to accurately control the thickness of the evaporation material layer 12, that is, the amount of evaporation material required for coating, the evaporation material layer 12 is evaporated to the evaporation source structure by magnetron sputtering or electron beam evaporation. 11 evaporation surface.
如此,蒸发材料层12是通过磁控溅射或电子束蒸镀预先定量镀到蒸发源结构11上的,呈现薄膜状态,因此使用片状面蒸镀装置镀膜时,不会出现类似锑珠镀膜那样的炸裂爆出问题,其蒸镀速率和膜厚度都是可控可调的。且镀膜完成后,薄片上蒸镀材料几乎都会被蒸发殆尽,因而不会存在蒸镀材料掉落形成异物或造成极间短路的问题,确保器件具备良好的抗冲击震动性能。In this way, the evaporation material layer 12 is quantitatively deposited on the evaporation source structure 11 in advance through magnetron sputtering or electron beam evaporation, and is in a thin film state. Therefore, when using a sheet surface evaporation device for coating, there will be no antimony bead coating. Such an explosion problem, the evaporation rate and film thickness are both controllable and adjustable. And after the coating is completed, almost all the evaporated materials on the sheet will be evaporated, so there will be no problems of the evaporated materials falling to form foreign objects or causing short circuits between electrodes, ensuring that the device has good impact and vibration resistance.
【用于光电倍增管镀膜的蒸镀装置的制作方法】[Method for manufacturing evaporation device for photomultiplier tube coating]
本发明第二方面提出一种技术方案,一种用于光电倍增管镀膜的蒸镀装置的制作方法,其特征在于,包括以下步骤:A second aspect of the present invention proposes a technical solution, a method for manufacturing an evaporation device for photomultiplier tube coating, which is characterized in that it includes the following steps:
S1、制作蒸发源结构11:S1. Make the evaporation source structure 11:
S11、根据待镀膜结构的形状,形成与待镀膜结构形状像匹配的金属薄片;S11. According to the shape of the structure to be coated, form a metal sheet that matches the shape of the structure to be coated;
S2、制作蒸发材料层12:S2. Make the evaporation material layer 12:
步骤S21、根据待镀膜结构的镀膜工艺厚度,通过高精度的镀膜方法将蒸发材料预先蒸镀到金属薄片的表面,并形成预定的厚度;Step S21: Pre-evaporate the evaporation material onto the surface of the metal sheet through a high-precision coating method according to the thickness of the coating process of the structure to be coated, and form a predetermined thickness;
其中,高精度的镀膜方法包括磁控溅射或电子束蒸镀。Among them, high-precision coating methods include magnetron sputtering or electron beam evaporation.
可以理解的,根据待镀膜结构(例如光窗玻璃)的形状,使用高熔点金属(钽、钨、铂等)制成对应形状的薄片结构,再将多个薄片共同的放置到一个托盘上,以托盘为整体,使其通过磁控溅射或电子束蒸镀的蒸发区域。It can be understood that according to the shape of the structure to be coated (such as optical window glass), high melting point metals (tantalum, tungsten, platinum, etc.) are used to make sheet structures of corresponding shapes, and then multiple sheets are jointly placed on a tray. The tray as a whole is passed through the evaporation area of magnetron sputtering or electron beam evaporation.
磁控溅射或电子束蒸镀都是高精度镀膜的手段,如此,能准确的控制蒸发源结构11上蒸发材料层12的厚度,以保证在蒸镀结束后,不会存在蒸镀材料掉落形成异物或造成极间短路的问题,确保器件具备良好的抗冲击震动性能。Magnetron sputtering or electron beam evaporation are both high-precision coating methods. In this way, the thickness of the evaporation material layer 12 on the evaporation source structure 11 can be accurately controlled to ensure that no evaporation material will fall off after the evaporation is completed. It prevents foreign matter from falling or causing short circuit between poles, ensuring that the device has good impact and vibration resistance.
优选的,在步骤S21中,对蒸发材料的厚度控制包括以下步骤:Preferably, in step S21, controlling the thickness of the evaporated material includes the following steps:
制造真空环境,并充入工艺气体氩气,氩气提供Ar离子源;Create a vacuum environment and fill it with process gas argon, which provides the Ar ion source;
控制磁控溅射靶材向预定区域发射镀层材料;Control the magnetron sputtering target to emit coating material to a predetermined area;
蒸发源结构11以预定的速度,往复的通过靶材溅射的区域;The evaporation source structure 11 reciprocates through the target sputtering area at a predetermined speed;
其中,控制蒸发源结构11通过靶材溅射的速度和次数,使蒸发源结构11表面形成的蒸发材料层12厚度达到目标厚度。Among them, the speed and number of times that the evaporation source structure 11 is sputtered by the target material is controlled so that the thickness of the evaporation material layer 12 formed on the surface of the evaporation source structure 11 reaches a target thickness.
具体的,结合图5所示,将待镀膜的片状蒸发源100平铺到工件盘400上,并将工件盘400安装到镀膜机的滑轨500。启动镀膜机的真空获得系统,预抽真空至真空度优于1E-3Pa。冲入Ar,保持镀膜机腔是真空为0.2Pa~0.8Pa。设定工件盘的运动速度为6~18mm/s,工件盘沿滑轨运动到靶材300下方进行往复式溅射镀膜,从而在片状蒸发源100表面镀制一层薄膜蒸发材料。Specifically, as shown in FIG. 5 , the sheet-shaped evaporation source 100 to be coated is laid flat on the workpiece tray 400 , and the workpiece tray 400 is installed on the slide rail 500 of the coating machine. Start the vacuum acquisition system of the coating machine and pre-evacuate until the vacuum degree is better than 1E-3Pa. Pour in Ar and keep the vacuum in the coating machine cavity at 0.2Pa ~ 0.8Pa. The movement speed of the workpiece disk is set to 6 to 18 mm/s, and the workpiece disk moves along the slide rail to the bottom of the target 300 for reciprocating sputtering coating, thereby depositing a layer of thin film evaporation material on the surface of the sheet evaporation source 100 .
可以理解的,在相同溅射功率下,工件盘的运动速度越快,所镀膜层越薄。It can be understood that under the same sputtering power, the faster the movement speed of the workpiece disk, the thinner the coating layer.
因此,调节工件盘的运动速度和工件盘往复运动的次数即可实现镀膜厚度精确调控。可选的,镀膜厚度一般50nm~300nm。Therefore, precise control of coating thickness can be achieved by adjusting the movement speed of the workpiece disk and the number of reciprocating movements of the workpiece disk. Optional, the coating thickness is generally 50nm~300nm.
【用于光电倍增管镀膜的蒸镀装置的制作装置】[Fabrication device for evaporation device for photomultiplier tube coating]
结合图5所示,本发明第三方面提出一种技术方案,一种用于光电倍增管镀膜的蒸镀装置的制作装置,包括:As shown in FIG. 5 , the third aspect of the present invention proposes a technical solution, a manufacturing device for an evaporation device for photomultiplier tube coating, including:
镀膜机腔600,镀膜机腔600用于构造镀膜环境,如真空度为0.2Pa~0.8Pa;Coating machine chamber 600. The coating machine chamber 600 is used to construct a coating environment, such as a vacuum degree of 0.2Pa to 0.8Pa;
磁控溅射靶材300,设置在镀膜机腔600内,磁控溅射靶材300用于向溅射区域发射镀膜材料;The magnetron sputtering target 300 is arranged in the coating machine cavity 600. The magnetron sputtering target 300 is used to emit coating materials to the sputtering area;
轨道500,设置到镀膜机腔600中,并经过溅射区域;The track 500 is set in the coating machine chamber 600 and passes through the sputtering area;
托盘400,用于盛放多个片状蒸发源100,托盘400连接到轨道500,托盘400能沿轨道500往复运动,以进入或脱离磁控溅射靶材的溅射区域;The tray 400 is used to hold multiple sheet evaporation sources 100. The tray 400 is connected to the track 500. The tray 400 can reciprocate along the track 500 to enter or leave the sputtering area of the magnetron sputtering target;
其中,轨道500被设置成能驱动托盘400以预定的速度经过溅射区域,以控制蒸发源结构11在溅射区域所处的时长。The track 500 is configured to drive the tray 400 through the sputtering area at a predetermined speed to control the length of time the evaporation source structure 11 is in the sputtering area.
在具体的实施例中,制作半圆环形的片状面蒸镀装置,以用于圆形光窗的镀膜使用,其中,需要制作形成第一膜层蒸镀装置100a和第二膜层蒸镀装置100c。In a specific embodiment, a semicircular annular sheet surface evaporation device is produced for coating of circular light windows, wherein a first film layer evaporation device 100a and a second film layer evaporation device need to be produced. 100c.
采用磁控溅射制作半圆环形片状面蒸镀装置。制备过程如下:Magnetron sputtering is used to produce a semicircular annular sheet surface evaporation device. The preparation process is as follows:
将待镀膜的片状蒸发源100平铺到工件盘400上,并将工件盘400安装到镀膜机的滑轨500。启动镀膜机的真空获得系统,预抽真空至真空度优于1E-3Pa。冲入Ar,保持镀膜机腔是真空为0.2Pa~0.8Pa。设定工件盘的运动速度为6~18mm/s,工件盘沿滑轨运动到靶材300下方进行往复式溅射镀膜,从而在片状蒸发源100表面镀制一层薄膜蒸发材料。The sheet-shaped evaporation source 100 to be coated is laid flat on the workpiece tray 400, and the workpiece tray 400 is installed on the slide rail 500 of the coating machine. Start the vacuum acquisition system of the coating machine and pre-evacuate until the vacuum degree is better than 1E-3Pa. Pour in Ar and keep the vacuum in the coating machine cavity at 0.2Pa ~ 0.8Pa. The movement speed of the workpiece disk is set to 6 to 18 mm/s, and the workpiece disk moves along the slide rail to the bottom of the target 300 for reciprocating sputtering coating, thereby depositing a layer of thin film evaporation material on the surface of the sheet evaporation source 100 .
可选的,镀膜厚度一般50nm~300nm。Optional, the coating thickness is generally 50nm~300nm.
(a)用于增透膜制备的片状面蒸镀装置制备(a) Preparation of sheet surface evaporation device for anti-reflection coating preparation
制作增透膜制备用的片状面蒸镀装置时,磁控溅射靶材300材质为锰、钛等金属靶材。以锰靶为例,溅射功率设定为15~20W/cm2设定工件盘的运动速度为6mm/s,往复次数为4~5次即可。When making a sheet surface evaporation device for preparing an anti-reflection film, the material of the magnetron sputtering target 300 is a metal target such as manganese or titanium. Taking the manganese target as an example, the sputtering power is set to 15~20W/ cm2 , the movement speed of the workpiece disk is set to 6mm/s, and the number of reciprocations is 4~5 times.
(b)用于阴极光电发射层的片状面蒸镀装置制备(b) Preparation of sheet surface evaporation device for cathode photoemitting layer
制作用于阴极光电发射层制备的片状面蒸镀装置时,磁控溅射靶材300材质为锑、碲等靶材。以锑靶为例,溅射功率设定为10~15W/cm2设定工件盘的运动速度为8mm/s,往复次数为3~4次即可。When making a sheet surface evaporation device for preparing a cathode photoemitting layer, the magnetron sputtering target 300 is made of target materials such as antimony and tellurium. Taking the antimony target as an example, the sputtering power is set to 10~15W/ cm2 , the movement speed of the workpiece disk is set to 8mm/s, and the number of reciprocations is 3~4 times.
【用于光电倍增管光窗镀膜的蒸镀方法】[Vapor deposition method for photomultiplier tube optical window coating]
本发明第四方面提出一种技术方案,一种用于光电倍增管光窗镀膜的蒸镀方法,包括以下步骤:The fourth aspect of the present invention proposes a technical solution, an evaporation method for photomultiplier tube optical window coating, which includes the following steps:
步骤a、按照上述的用于光电倍增管镀膜的蒸镀装置的制作方法制造形成第一膜层蒸镀装置和第二膜层蒸镀装置;Step a. Manufacture and form a first film layer evaporation device and a second film layer evaporation device according to the above-mentioned manufacturing method of an evaporation device for photomultiplier tube coating;
步骤b、将第一膜层蒸镀装置和第二膜层蒸镀装置的正极分别连接到第一正极接线柱和第二正极接线柱,第一膜层蒸镀装置和第二膜层蒸镀装置的负极连接到光电倍增管的聚焦极;Step b. Connect the positive electrodes of the first film layer evaporation device and the second film layer evaporation device to the first positive electrode terminal and the second positive electrode terminal respectively. The first film layer evaporation device and the second film layer evaporation device The negative electrode of the device is connected to the focusing electrode of the photomultiplier tube;
步骤c、向第一正极接线柱以及光电倍增管的聚焦极加载电流,使光窗表面形成第一膜层,再向第二正极接线柱以及光电倍增管的聚焦极加载电流,使光窗表面形成第二膜层;Step c. Load current to the first positive terminal and the focusing electrode of the photomultiplier tube to form a first film layer on the surface of the light window, and then load current to the second positive terminal and the focusing electrode of the photomultiplier tube to form a first film layer on the surface of the light window. Form a second film layer;
其中,第一蒸镀装置的金属靶材包括锰、钛等,第二蒸镀装置的金属靶材包括锑、碲等。The metal target of the first evaporation device includes manganese, titanium, etc., and the metal target of the second evaporation device includes antimony, tellurium, etc.
可选的,制备第一膜层蒸镀装置时,按照以下工艺:锰靶溅射功率设定为15~20W/cm2,工件盘的运动速度为6mm/s,往复次数为4~5次;Optionally, when preparing the first film layer evaporation device, follow the following process: the manganese target sputtering power is set to 15~20W/cm 2 , the movement speed of the workpiece disk is 6mm/s, and the number of reciprocations is 4~5 times. ;
制备第二膜层蒸镀装置时,按照以下工艺:锑靶溅射功率设定为10~15W/cm2,工件盘的运动速度为8mm/s,往复次数为3~4次。When preparing the second film layer evaporation device, follow the following process: the antimony target sputtering power is set to 10-15W/cm 2 , the movement speed of the workpiece disk is 8mm/s, and the number of reciprocations is 3-4 times.
【用于光电倍增管光窗镀膜的蒸镀装置】[Evaporation device for photomultiplier tube optical window coating]
结合图6所示,本发明第五方面提出一种技术方案,一种用于光电倍增管光窗镀膜的蒸镀装置,包含第一膜层蒸镀装置100a、第二膜层蒸镀装置100c、光电倍增管的聚焦极700、玻璃光窗800、正极引线900以及正极接线柱901。其中,第一膜层蒸镀装置100a用于蒸镀形成玻璃光窗800内表面的增透膜,第二膜层蒸镀装置100c用于蒸镀形成玻璃光窗800内表面的金属锑膜。As shown in FIG. 6 , the fifth aspect of the present invention proposes a technical solution, an evaporation device for photomultiplier tube light window coating, including a first film layer evaporation device 100 a and a second film layer evaporation device 100 c , the focusing electrode 700 of the photomultiplier tube, the glass light window 800, the positive lead 900 and the positive terminal 901. Among them, the first film layer evaporation device 100a is used to evaporate and form an anti-reflection film on the inner surface of the glass light window 800, and the second film layer evaporation device 100c is used to evaporate and form a metal antimony film on the inner surface of the glass light window 800.
结合图6所示,第一膜层蒸镀装置100a和第二膜层蒸镀装置100c的布置是相互嵌套的,相对的处于彼此的内侧或外侧,可保证两层镀膜的均匀性。并且第一膜层蒸镀装置100a以及第二膜层蒸镀装置100c中的一对蒸镀装置是绕玻璃光窗800对称分布的,如此,能保证两条蒸发源结构11通电后,其表面的蒸发材料层12均匀的蒸发到玻璃光窗800的预定区域,使形成的镀膜均匀并镀膜范围落入预定范围。As shown in FIG. 6 , the first film layer evaporation device 100a and the second film layer evaporation device 100c are arranged to be nested inside or outside each other, which can ensure the uniformity of the two layers of coating. Moreover, a pair of evaporation devices in the first film layer evaporation device 100a and the second film layer evaporation device 100c are symmetrically distributed around the glass light window 800. In this way, it can be ensured that after the two evaporation source structures 11 are energized, their surfaces The evaporation material layer 12 is uniformly evaporated to a predetermined area of the glass light window 800, so that the formed coating film is uniform and the coating range falls into a predetermined range.
以增透膜蒸蒸镀装置详细阐蒸镀装置的装配和蒸镀过程。The assembly and evaporation process of the evaporation device are explained in detail using the antireflection film evaporation device.
第一膜层蒸镀装置100a的第一端通过正极引线900钽丝与增透膜蒸蒸镀的正极接线柱901连接,并通过引线引出至光电倍增管外。第一膜层蒸镀装置100a的另一端与焊接在光电倍增管的聚焦极700上,以光电倍增管的聚焦极700作为第一膜层蒸镀装置100a的负极。The first end of the first film layer evaporation device 100a is connected to the positive electrode terminal 901 of the anti-reflection film evaporation deposition through the positive electrode lead 900 tantalum wire, and is led out of the photomultiplier tube through the lead wire. The other end of the first film evaporation device 100a is welded to the focusing electrode 700 of the photomultiplier tube, and the focusing electrode 700 of the photomultiplier tube is used as the negative electrode of the first film evaporation device 100a.
通过正极接线柱901和光电倍增管的聚焦极700加载一定的电流,利用电热效应使第一膜层蒸镀装置100a自身发热从而将表面的蒸镀材料蒸发镀到玻璃光窗800上,形成第一膜层,即增透膜。A certain current is loaded through the positive terminal 901 and the focusing electrode 700 of the photomultiplier tube, and the electrothermal effect is used to cause the first film layer evaporation device 100a to heat itself, thereby evaporating the evaporation material on the surface onto the glass light window 800, forming a third film layer evaporation device 100a. One film layer is the anti-reflection coating.
第二膜层金属锑膜的镀膜结构和原理与第一膜层相同,第二膜层蒸镀装置100c的第一端通过正极引线900钽丝与增透膜蒸蒸镀的正极接线柱901连接,并通过引线引出至光电倍增管外。第二膜层蒸镀装置100c的另一端与焊接在光电倍增管的聚焦极700上,以光电倍增管的聚焦极700作为第二膜层蒸镀装置100c的负极。The coating structure and principle of the metal antimony film of the second film layer are the same as those of the first film layer. The first end of the second film layer evaporation device 100c is connected to the positive electrode terminal 901 of the antireflection film evaporation through the positive electrode lead 900 tantalum wire. , and lead out to the outside of the photomultiplier tube through leads. The other end of the second film evaporation device 100c is welded to the focusing electrode 700 of the photomultiplier tube, and the focusing electrode 700 of the photomultiplier tube is used as the negative electrode of the second film evaporation device 100c.
通过正极接线柱901和光电倍增管的聚焦极700加载一定的电流,利用电热效应使第二膜层蒸镀装置100c自身发热从而将表面的蒸镀材料蒸发镀到玻璃光窗800上,形成第二膜层,即金属锑膜。A certain current is loaded through the positive terminal 901 and the focusing electrode 700 of the photomultiplier tube, and the electrothermal effect is used to cause the second film layer evaporation device 100c to heat itself, thereby evaporating the evaporation material on the surface onto the glass light window 800, forming a second film layer evaporation device 100c. The second film layer is the metal antimony film.
进一步的,镀膜及阴极激活包括以下步骤:Further, coating and cathode activation include the following steps:
将第一膜层蒸镀装置100a和第二膜层蒸镀装置100c装配到光电倍增管内,分别代替原有锰、锑球形蒸镀装置。按光电倍增管制作工艺先进行蒸锰,蒸发电流设定为5~10A,尺寸蒸镀1~2min;然后在光电倍增管内冲入氧气将锰氧化为氧化锰增透膜。The first film layer evaporation device 100a and the second film layer evaporation device 100c are assembled into the photomultiplier tube to replace the original manganese and antimony spherical evaporation devices respectively. According to the photomultiplier tube manufacturing process, the manganese is first evaporated, the evaporation current is set to 5 to 10A, and the size is evaporated for 1 to 2 minutes; then oxygen is injected into the photomultiplier tube to oxidize the manganese into a manganese oxide antireflection film.
完成增透膜制备后,再将光电倍增管内真空度抽至1E-4Pa以下,再进行蒸锑和碱金属激活。蒸锑电流为2~4A,持续蒸镀2~5min,再依次进行碱金属K和Cs激活。After completing the preparation of the antireflection film, the vacuum in the photomultiplier tube is evacuated to below 1E-4Pa, and then antimony and alkali metal activation are performed. The antimony evaporation current is 2 to 4 A, and the evaporation is continued for 2 to 5 minutes, and then the alkali metal K and Cs are activated in sequence.
进一步的,测定采用不同蒸镀装置制造光电倍增管阴极面16个点位的阴极量子效率。如图7a为采用本实施例公开方案的面蒸镀装置的光电倍增管量子效率分布图,图7b为采用传统常规金属丝负载球型蒸发源装置制备光电倍增管量子效率分布图。Furthermore, the cathode quantum efficiency at 16 points on the cathode surface of the photomultiplier tube manufactured using different evaporation devices was measured. Figure 7a is a photomultiplier tube quantum efficiency distribution diagram using the surface evaporation device disclosed in this embodiment. Figure 7b is a photomultiplier tube quantum efficiency distribution diagram using a traditional conventional metal wire loaded spherical evaporation source device.
可以看出,采用本专利公开方案的面蒸发源蒸镀装置制造的光电倍增管各点位量子效率均较高,均在31.4%~31.7%,而常规金属丝负载球型点蒸发源装置制作的光电倍增管的量子效率在23.3%~30.2%之间。It can be seen that the quantum efficiency of the photomultiplier tube manufactured by the surface evaporation source evaporation device disclosed in this patent is relatively high, ranging from 31.4% to 31.7%, while the quantum efficiency of the photomultiplier tube manufactured by the conventional metal wire loaded spherical point evaporation source device The quantum efficiency of the photomultiplier tube is between 23.3% and 30.2%.
因此,采用本专利的面蒸发源蒸镀装置制造的光电倍增管的量子效率及量子效率均一性均明显优于采用常规金属丝负载球型点蒸发源装置制作光电倍增管的性能。Therefore, the quantum efficiency and quantum efficiency uniformity of photomultiplier tubes manufactured using the patented surface evaporation source evaporation device are significantly better than those of photomultiplier tubes manufactured using conventional metal wire-loaded spherical point evaporation source devices.
随机各选取20只两种镀膜工艺制作的光电倍增管进行外观检查和暗电流测试,采用片状面蒸镀装置制作的光电倍增管合格率100%,暗电流均值为1.5nA。采用传统球形点蒸发源制作的光电倍增管中有一只有锑珠脱落掉渣,合格率为95%,暗电流均值为5.3nA。Randomly select 20 photomultiplier tubes produced by two coating processes for appearance inspection and dark current testing. The photomultiplier tubes produced using a sheet surface evaporation device have a pass rate of 100% and an average dark current of 1.5nA. One of the photomultiplier tubes produced using a traditional spherical point evaporation source had an antimony bead falling off and falling off, with a pass rate of 95% and an average dark current of 5.3nA.
结合以上实施例,本发明提出一种片状面蒸镀装置,可根据光电倍增管光窗几何形状灵活调整片状面蒸镀装置的形状,利用面蒸发源的优势提升其镀膜的均匀性,从而提升器件的量子效率均匀性。且片状面蒸镀装置镀膜方向仅朝向玻璃光窗,其他方向被其自身蒸发源薄片挡住,不会蒸镀到陶瓷等不需要镀膜的位置,可改善整管的噪声特性。Combined with the above embodiments, the present invention proposes a sheet surface evaporation device that can flexibly adjust the shape of the sheet surface evaporation device according to the geometry of the photomultiplier tube light window, and utilizes the advantages of the surface evaporation source to improve the uniformity of its coating. Thereby improving the quantum efficiency uniformity of the device. Moreover, the coating direction of the sheet surface evaporation device only faces the glass light window, and other directions are blocked by its own evaporation source sheet. It will not evaporate to locations such as ceramics that do not require coating, which can improve the noise characteristics of the entire tube.
另外,片状面蒸镀装置上的蒸镀材料是通过磁控溅射或电子束蒸镀预先定量镀到蒸发源片上的,呈现薄膜状态。因此使用片状面蒸镀装置镀膜时,不会出现类似锑珠镀膜那样的炸裂爆出问题,其蒸镀速率和膜厚度都是可控可调的;镀膜完成后,薄片上蒸镀材料几乎都会被蒸发殆尽,因而不会存在蒸镀材料掉落形成异物或造成极间短路的问题,确保器件具备良好的抗冲击震动性能。In addition, the evaporation material on the sheet surface evaporation device is pre- quantitatively deposited on the evaporation source sheet through magnetron sputtering or electron beam evaporation, and is in a thin film state. Therefore, when using a sheet surface evaporation device for coating, there will be no explosion problems like antimony bead coating, and the evaporation rate and film thickness are controllable and adjustable; after the coating is completed, the evaporation material on the sheet is almost All will be evaporated, so there will be no problem of evaporated materials falling to form foreign matter or causing short circuit between electrodes, ensuring that the device has good impact and vibration resistance.
虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明。本发明所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰。因此,本发明的保护范围当视权利要求书所界定者为准。Although the present invention has been disclosed above in terms of preferred embodiments, these are not intended to limit the present invention. Those with ordinary skill in the technical field to which the present invention belongs can make various modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the claims.
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