CN116722023B

CN116722023B - TFT core component suitable for DR flat panel detector and preparation method thereof

Info

Publication number: CN116722023B
Application number: CN202311001304.5A
Authority: CN
Inventors: 周鑫; 陈春松
Original assignee: Yirui Imaging Technology Taicang Co ltd
Current assignee: Yirui Imaging Technology Taicang Co ltd
Priority date: 2023-08-10
Filing date: 2023-08-10
Publication date: 2023-12-01
Anticipated expiration: 2043-08-10
Also published as: CN116722023A

Abstract

The present invention provides a TFT core component suitable for DR flat panel detectors and a preparation method thereof. By growing an aluminum film layer on a first glass substrate, a glass substrate provided with an aluminum film layer is formed, thereby improving the diffuse reflection effect. The first package The cesium iodide scintillator layer and the second encapsulation layer completely cover the cesium iodide scintillator layer, which can prevent external water vapor from entering the cesium iodide scintillator layer and prevent the cesium iodide scintillator layer from deliquescence, thereby improving the image quality of the DR flat panel detector. The rigid The second glass substrate can improve the structural strength of the TFT core components, increase the service life of the DR flat panel detector, and splice two or more small-sized TFT substrates to form a larger-sized TFT module, which can To meet the demand for larger pixels, patients can obtain an overall image of the entire spine or entire lower limbs without multiple exposures during photography, which reduces the exposure time during photography, is safer for patients, and makes the operation process easier.

Description

TFT core component suitable for DR flat panel detector and preparation method thereof

Technical Field

The application relates to the field of medical detectors, in particular to a TFT core component suitable for a DR flat panel detector and a preparation method thereof.

Background

The X-ray detector is widely applied to medical instruments, for example, X-rays are utilized in a DR flat panel detector to perform chest radiography, in the prior art, the X-ray detector mainly comprises a scintillator layer and an amorphous silicon photosensitive layer, wherein the scintillator layer converts the X-rays into visible light, the amorphous silicon photosensitive layer converts the visible light into an electric signal, finally the electric signal is read and output to imaging equipment to form an image, however, the standard of the commonly used DR flat panel detector is smaller, but the normal length of the whole spine and lower limbs of an adult is basically greater than or equal to 60cm, so that the commonly used DR flat panel detector is found to be incapable of completely displaying the forms of the whole spine and the whole lower limbs in practical use.

Aiming at the problems, a DR flat panel detector with a long bone automatic splicing function is generally adopted in the field of medical detectors at present, when shooting is carried out, the part to be shot needs to be exposed continuously for 2-3 times, an image is generated by a DR flat panel detector system in a segmented mode, and then the whole image of the whole spine or the whole lower limb can be obtained by using the splicing function. However, this method requires multiple exposures to the patient, which not only results in an extended imaging time, but also increases the amount of radiation received by the patient, and further increases the protection of non-imaging parts due to an increased irradiation range, increasing the difficulty of protection.

In addition, if the core TFT module process suitable for the common small-size DR flat panel detector is directly applied to preparing the large-size DR flat panel detector, the problems that the TFT module process is difficult to match, the design of the size of the TFT module is inflexible, the preparation is difficult and the like exist.

Therefore, how to design a DR flat panel detector capable of reducing photographing difficulty and having a simple manufacturing process, a TFT core assembly suitable for manufacturing a DR flat panel detector having a larger size, and a manufacturing process thereof are challenges.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide a TFT core assembly suitable for a DR flat panel detector and a method for manufacturing the same, which are used for solving the problems that the TFT core assembly in the prior art cannot be directly suitable for a DR flat panel detector with a larger size and a DR flat panel detector with a size of 17 x 17 inches, which is commonly used, has a long exposure time, and causes a high probability of damage to a patient, and cannot directly capture an overall image of the whole spine and the whole lower limb.

To achieve the above and other related objects, the present application provides a method for manufacturing a TFT core assembly for a DR flat panel detector, comprising the steps of:

providing a first glass substrate, and sputtering an aluminum film layer on one side of the first glass substrate by adopting vacuum magnetron sputtering as a scattering layer of X-ray;

performing a vapor deposition process on the aluminum film layer to form a first packaging layer;

performing a vacuum evaporation process on the first packaging layer to form a cesium iodide scintillator layer, wherein the cesium iodide scintillator layer is used for converting X-ray into visible light;

performing a secondary vapor deposition process on the cesium iodide scintillator layer to form a second packaging layer, so as to obtain a cesium iodide module;

providing a second glass substrate, and coating a first adhesive on one side of the second glass substrate;

sequentially splicing at least two TFT substrates together along a first direction, positioning a splice joint between the at least two TFT substrates on the central axis of the TFT core assembly, and bonding the at least two spliced TFT substrates with the first adhesive;

coating a second adhesive on the other side of the at least two TFT substrates to obtain a TFT module;

and bonding the cesium iodide module with the TFT module by using automatic bonding equipment to obtain the TFT core component suitable for the DR flat panel detector.

Optionally, the thickness of the aluminum thin film layer is 150 a to 250 a.

Optionally, the second glass substrate is a rigid glass substrate.

Optionally, the cesium iodide scintillator layer has a thickness of 200 μm to 800 μm.

Optionally, the at least two TFT substrates are spliced by short sides, and the sizes of the at least two TFT substrates are the same.

Optionally, the first adhesive and the second adhesive are both optical adhesive OCAs.

The present application also provides a TFT core assembly suitable for use in a DR flat panel detector, the TFT core assembly comprising:

the cesium iodide module at least comprises a first glass substrate and a cesium iodide scintillator layer, wherein an aluminum film layer is arranged on one side of the first glass substrate, the cesium iodide scintillator layer is positioned on the aluminum film layer, a first packaging layer is arranged between the cesium iodide scintillator layer and the aluminum film layer, and a second packaging layer is arranged on one side, far away from the first packaging layer, of the cesium iodide scintillator layer and used for preventing deliquescence of the cesium iodide scintillator layer;

the TFT module comprises a second glass substrate and at least two TFT substrates, wherein a first adhesive is arranged on one side of the second glass substrate, the at least two TFT substrates are spliced in sequence along a first direction, one side of the at least two TFT substrates is bonded with the first adhesive, and the other side of the at least two TFT substrates is bonded with the second packaging layer through the second adhesive to form a TFT core assembly.

Optionally, the thickness of the aluminum thin film layer is 150 a to 250 a.

Optionally, the second glass substrate is a rigid glass substrate.

Optionally, the sizes of the at least two TFT substrates are the same and the splicing mode of the at least two TFT substrates is short-side splicing.

Optionally, the thickness of the first packaging layer is the same as that of the second packaging layer and is 20-50 μm.

The application also provides a DR flat panel detector, which at least comprises the TFT core component.

As described above, the TFT core assembly for a DR flat panel detector and the method of manufacturing the same according to the present application have the following advantages: the TFT core component suitable for the DR flat panel detector comprises a first glass substrate, an aluminum film layer, a cesium iodide scintillator layer, a first packaging layer and a second packaging layer, wherein the first packaging layer and the second packaging layer are arranged on two sides of the cesium iodide scintillator layer, the second glass substrate and at least two TFT substrates are arranged on the two sides of the at least two TFT substrates, and a first adhesive and a second adhesive are arranged on the two sides of the at least two TFT substrates.

Drawings

Fig. 1 is a schematic flow chart of a method for manufacturing a TFT core assembly according to an embodiment of the present application.

Fig. 2 is a schematic view showing a structure of a TFT core assembly according to an embodiment of the present application after forming a first glass substrate and an aluminum thin film layer.

Fig. 3 is a schematic diagram of a structure of a TFT core assembly according to an embodiment of the present application after forming a first encapsulation layer and a cesium iodide scintillator layer.

Fig. 4 is a schematic structural diagram of a TFT core assembly according to an embodiment of the present application after forming a cesium iodide module.

Fig. 5 is a schematic view showing a structure of the TFT core assembly according to an embodiment of the present application after forming a second glass substrate.

Fig. 6 is a schematic structural diagram of a TFT substrate bonded and spliced in a TFT core assembly according to an embodiment of the present application.

Fig. 7 is a schematic diagram of a TFT core assembly according to an embodiment of the present application after forming a TFT module.

Fig. 8 is a schematic diagram showing the structure of a TFT core assembly according to an embodiment of the present application.

Description of the reference numerals

101. A first glass substrate; 102. an aluminum thin film layer; 103. a first encapsulation layer; 104. a cesium iodide scintillator layer; 105. a second encapsulation layer; 106. a second glass substrate; 107. a first adhesive; 108. a TFT substrate; 109. a second adhesive; S1-S8, and performing a step.

Detailed Description

Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.

It should be understood that the use of the terms "first," "second," and the like, as used herein, are merely intended to facilitate distinguishing between the above elements and not to limit the scope of the application unless otherwise specified.

In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.

Please refer to fig. 1 to 8. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

Example 1

The embodiment provides a method for preparing a TFT core assembly suitable for a DR flat panel detector, as shown in fig. 1, which is a schematic flow chart of the method for preparing a TFT core assembly suitable for a DR flat panel detector, and includes the following steps.

S1: providing a first glass substrate 101, and sputtering an aluminum film layer 102 on one side of the first glass substrate 101 by vacuum magnetron sputtering to serve as a scattering layer of X-ray;

s2: performing a vapor deposition process on the aluminum film layer 102 to form a first encapsulation layer 103;

s3: performing a vacuum evaporation process on the first packaging layer 103 to form a cesium iodide scintillator layer 104, wherein the cesium iodide scintillator layer 104 is used for converting X-ray into visible light;

s4: performing a second vapor deposition process on the cesium iodide scintillator layer 104 to form a second encapsulation layer 105, thereby obtaining a cesium iodide module;

s5: providing a second glass substrate 106, and coating a first adhesive 107 on one side of the second glass substrate 106;

s6: sequentially splicing at least two TFT substrates 108 together along a first direction, wherein a splice between the at least two TFT substrates 108 is positioned on a central axis of the TFT core assembly, and the at least two TFT substrates 108 after splicing are bonded with the first adhesive 107;

s7: coating a second adhesive 109 on the other side of the at least two TFT substrates 108 to obtain a TFT module;

s8: and bonding the cesium iodide module with the TFT module by using automatic bonding equipment to obtain the TFT core component suitable for the DR flat panel detector.

The following describes a method for preparing the TFT core assembly suitable for DR flat panel detector with reference to the accompanying drawings, specifically as follows:

in step S1, referring to fig. 1 to 2, a first glass substrate 101 is provided, and an aluminum thin film layer 102 is vacuum magnetron sputtered on one side of the first glass substrate 101 to serve as a scattering layer for X-rays.

Specifically, as shown in fig. 2, in the embodiment of the present application, a first glass substrate 101 is provided, the main component of the first glass substrate 101 is silica, the first glass substrate 101 is cleaned in an ultrasonic cleaner, the liquid in the ultrasonic cleaner is ethanol solution with the volume fraction of 60% -75%, the ultrasonic cleaning time is 5 min-15 min, so that stains on the first glass substrate 101 can be effectively removed, deionized water is used to rinse the glass, the water temperature is controlled at 25-45 ℃, then the first glass substrate 101 is subjected to multi-angle air drying treatment, one side of the dried first glass substrate 101 is subjected to surface treatment, the surface treated first glass substrate 101 is placed in a non-conductive vacuum magnetron sputtering coater, a layer of aluminum film layer 102 is sputtered on the surface of one side of the surface treated first glass substrate 101, and the existence of the aluminum film layer 102 can improve the scattering effect of the first glass substrate 101 on X-ray.

In order to enhance the scattering effect of the first glass substrate 101 on the X-ray, the thickness of the aluminum thin film layer 102 is preferably 150 a to 250 a, for example, 150 a, 200 a or 250 a, and of course, the thickness of the aluminum thin film layer 102 is not limited thereto and may be set according to practical needs.

In step S2, referring to fig. 1 and 3, a vapor deposition process is performed on the aluminum thin film layer 102 to form a first encapsulation layer 103.

Specifically, the first encapsulation layer 103 is formed on the aluminum thin film layer 102 using a physical vapor deposition process, and the material of the first encapsulation layer 103 includes parylene or polyimide. The first encapsulation layer 103 is capable of allowing the incidence of X-rays and reflecting the visible light generated by the cesium iodide scintillator layer 104 to avoid the loss of the visible light, thereby enabling to improve the performance of the DR flat panel detector fabricated using the TFT core assembly. Of course, the material of the first encapsulation layer 103 is not limited thereto.

In step S3, referring to fig. 1 and 4, a vacuum evaporation process is performed on the first encapsulation layer 103 to form a cesium iodide scintillator layer 104, where the cesium iodide scintillator layer 104 is used for converting X-rays into visible light.

Specifically, the cesium iodide scintillator layer 104 is formed on the first encapsulation layer 103, and preferably, the process of forming the cesium iodide scintillator layer 104 is a vacuum evaporation process, the cesium iodide scintillator layer 104 can effectively absorb X-rays and convert them into visible light, and the formation material of the cesium iodide scintillator layer 104 can be pure cesium iodide scintillator CsI (pure), i.e., undoped cesium iodide scintillator, or sodium doped cesium iodide scintillator CsI (Na).

As shown in fig. 4, the thickness of the cesium iodide scintillator layer 104 is 200 μm to 800 μm, for example, may be 200 μm, 400 μm, 600 μm, or 800 μm, if the cesium iodide scintillator layer 104 is too thin, it may result in low efficiency of X-ray conversion into near visible light; if the cesium iodide scintillator layer 104 is too thick, this results in a cost increase and X-rays are easily absorbed by the cesium iodide scintillator layer 104 to cause a low conversion efficiency of visible light. Preferably, the cesium iodide scintillator layer 104 can have a thickness of 400 μm to 500 μm.

Specifically, in the present embodiment, the cesium iodide scintillator layer 104 may include a plurality of cesium iodide columnar crystals arranged in an array. And each cesium iodide columnar crystal has a diameter sized to fit the TFT core components. Too coarse cesium iodide columnar crystals tend to increase crosstalk; too thin cesium iodide columnar crystals can cause the light conversion efficiency of the columnar crystals to become low and the spacing of the columnar crystals to increase, so that the pixels of an image generated by a DR flat panel detector prepared by using the TFT core component are sparse.

In step S4, referring to fig. 1 and fig. 4, a second vapor deposition process is performed on the cesium iodide scintillator layer 104 to form a second encapsulation layer 105, so as to obtain a cesium iodide module.

Specifically, the second encapsulation layer 105 is formed on the cesium iodide scintillator layer 104 to obtain the cesium iodide module, preferably, the process of forming the second encapsulation layer 105 is a physical vapor deposition process, and the material of the second encapsulation layer 105 includes parylene or polyimide, and since the material forming the cesium iodide scintillator layer 104 is easy to deliquesce, the first encapsulation layer 103 and the second encapsulation layer 105 can protect the cesium iodide scintillator layer 104, so that foreign substances, such as water vapor, can be prevented from entering into the combination with the cesium iodide scintillator layer 104 to destroy the cesium iodide scintillator layer 104.

In step S5, referring to fig. 1 and 5, a second glass substrate 106 is provided, and a first adhesive 107 is coated on one side of the second glass substrate 106. Specifically, a second glass substrate 106 is provided, the main component of the second glass substrate 106 is silicon dioxide, the second glass substrate 106 is put into an ultrasonic cleaner for cleaning, the liquid in the ultrasonic cleaner is ethanol solution with the volume fraction of 60% -75%, the ultrasonic cleaning time is 5-15 min, so that the dirt on the second glass substrate 106 can be effectively removed, deionized water is used for flushing glass, the water temperature is controlled to be 25-45 ℃, and then the second glass substrate 106 is subjected to multi-angle air drying treatment. Preferably, the second glass substrate 106 is a rigid glass substrate, which can improve the structural strength of the TFT core assembly, thereby increasing the service life of the DR flat panel detector manufactured using the TFT core assembly, and in addition, the first adhesive 107 is coated on one side of the second glass substrate 106 after the drying process, preferably, the first adhesive 107 is an optical adhesive OCA, so that the second glass substrate 106 coated with the first adhesive 107 can be bonded with the TFT substrate 108. In step S6, referring to fig. 1 and 6, at least two TFT substrates 108 are sequentially spliced together along a first direction, and a splice between the at least two TFT substrates 108 is located on a central axis of the TFT core assembly, and the at least two TFT substrates 108 after the splicing are bonded with the first adhesive 107.

Specifically, at least two TFT substrates 108 are spliced together in sequence along a first direction, the first direction of the TFT substrates 108 is defined as a direction perpendicular to a short side of the TFT substrates 108, preferably, the sizes of the at least two TFT substrates 108 are the same, in this embodiment, the sizes of the TFT substrates 108 are 17×24 inches (about 43×61 cm), the two TFT substrates 108 are spliced together in sequence along the first direction, that is, the splicing manner of the two TFT substrates 108 is short side splicing, and the sizes of the TFT substrates 108 after splicing are 17×48 inches (about 43×120 cm), so that the TFT module based on the sizes can completely cover the whole spine and the lower limb of an adult, thereby the whole image of the whole spine or the whole lower limb can be obtained without continuously exposing the part to be shot for multiple times, and without using a splicing function. As shown in fig. 6, the two TFT substrates 108 after the joining are bonded to the first adhesive 107, so as to bond to the second glass substrate 106.

In step S7, referring to fig. 1 and fig. 7, a second adhesive 109 is coated on the other sides of the at least two TFT substrates 108 to obtain a TFT module.

Specifically, in this embodiment, as shown in fig. 7, after bonding the two TFT substrates 108 after the bonding with the first adhesive 107, a second adhesive 109 is coated on the other side of the two TFT substrates 108 after the bonding to form a TFT module, and preferably, the second adhesive 109 is an optical adhesive OCA, so that the TFT module coated with the second adhesive 109 can be bonded with a cesium iodide module.

In step S8, referring to fig. 1 and 8, the cesium iodide module and the TFT module are attached by using an automatic attaching device, so as to obtain a TFT core component suitable for a DR panel detector.

Specifically, as shown in fig. 8, the cesium iodide module and the TFT module are placed in an automatic bonding device, and bonding of the cesium iodide module and the TFT module is achieved through bonding of the second packaging layer 105 and the second adhesive 109, so that a TFT core component suitable for a DR panel detector is formed.

In this embodiment, the size of the formed TFT core assembly is consistent with the size (about 43×120 cm) of the TFT substrate 108 after the TFT core assembly is spliced, so that the DR flat panel detector prepared by using the TFT core assembly can completely cover the whole spine and lower limbs of an adult, thereby meeting the requirement of pixels with larger size, enabling the patient to obtain the whole image of the whole spine or the whole lower limbs without multiple exposure shooting during shooting, reducing the exposure time during shooting, being safer for the patient and having simpler operation process.

Example two

The present embodiment provides a TFT core assembly suitable for a DR panel detector, as shown in fig. 8, which is a schematic cross-sectional structure of the TFT core assembly suitable for a DR panel detector, where the TFT core assembly includes: the cesium iodide module comprises at least a first glass substrate 101 and a cesium iodide scintillator layer 104, wherein an aluminum film layer 102 is arranged on one side of the first glass substrate 101, the cesium iodide scintillator layer 104 is positioned on the aluminum film layer 102, a first packaging layer 103 is arranged between the cesium iodide scintillator layer and the aluminum film layer 102, and a second packaging layer 105 is arranged on one side, away from the first packaging layer 103, of the cesium iodide scintillator layer 104, and is used for preventing deliquescence of the cesium iodide scintillator layer 104; the TFT module comprises a second glass substrate 106 and at least two TFT substrates 108, wherein a first adhesive 107 is arranged on one side of the second glass substrate 106, the at least two TFT substrates 108 are spliced in sequence along a first direction, one side of the at least two TFT substrates 108 is adhered to the first adhesive 107, and the other side of the at least two TFT substrates 108 is adhered to the second packaging layer 105 through a second adhesive 109, so that a TFT core assembly is formed.

For example, the thickness of the aluminum thin film layer 102 is 150 a to 250 a.

Specifically, the aluminum thin film layer 102 may improve the scattering effect of the first glass substrate 101 on the X-ray, preferably, the thickness of the aluminum thin film layer 102 is 150 a to 250 a, for example, 150 a, 200 a or 250 a, and of course, the thickness of the aluminum thin film layer 102 is not limited thereto and may be set according to practical needs.

As an example, the second glass substrate 106 is a rigid glass substrate.

Specifically, the second glass substrate 106 is a rigid glass substrate that can increase the structural strength of the TFT core assembly, thereby increasing the lifetime of the DR flat panel detector fabricated using the TFT core assembly.

As an example, the at least two TFT substrates 108 have the same size and the at least two TFT substrates 108 are connected in a short-side connection.

Specifically, the dimensions of at least two TFT substrates 108 are the same, in this embodiment, the dimensions of the TFT substrates 108 are 17×24 inches (about 43×61 cm), the short sides of the two TFT substrates 108 are spliced together, and the dimensions of the TFT substrates 108 after the splicing are substantially twice as large as those of the original TFTs, so that the TFT module based on the dimensions can completely cover the whole spine and lower limbs of the adult.

As an example, the thickness of the first encapsulation layer 103 is the same as the thickness of the second encapsulation layer 105 and is 20 μm to 50 μm.

Specifically, since the material forming the cesium iodide scintillator layer 104 is liable to deliquesce, the cesium iodide scintillator layer 104 can be protected by the first encapsulation layer 103 and the second encapsulation layer 105, so that foreign substances such as moisture or the like can be prevented from entering into the junction with the cesium iodide scintillator layer 104 to damage the cesium iodide scintillator layer 104. In this embodiment, the thickness of the first encapsulation layer 103 is the same as that of the second encapsulation layer 105 and is 20 μm to 50 μm, for example, 20 μm, 30 μm, 40 μm or 50 μm, and of course, the thicknesses of the first encapsulation layer 103 and the second encapsulation layer 105 are not limited thereto and may be set according to practical needs.

Example III

The embodiment also provides a DR panel detector, where the DR panel detector at least includes the TFT core assembly described above.

Specifically, the DR flat panel detector prepared based on the TFT core component with the size can completely cover the whole spine and lower limbs of an adult, so that the pixel requirement of a larger size can be met, a patient can obtain the whole image of the whole spine or the whole lower limbs without multiple exposure shooting when shooting, the exposure time during shooting is reduced, and the DR flat panel detector is safer for the patient and simpler and more convenient in operation process.

In summary, the TFT core assembly and the preparation method thereof provided by the application are suitable for a DR flat panel detector, wherein the TFT core assembly comprises a first glass substrate, an aluminum film layer, a cesium iodide scintillator layer, a first packaging layer and a second packaging layer which are positioned at two sides of the cesium iodide scintillator layer, a second glass substrate, at least two TFT substrates, and a first adhesive and a second adhesive which are arranged at two sides of the at least two TFT substrates, and the aluminum film layer is grown on the first glass substrate to form the substrate with the aluminum film layer, thereby improving diffuse reflection effect, the first packaging layer and the second packaging layer completely cover the cesium iodide scintillator layer, preventing external water vapor from entering the cesium iodide scintillator layer, preventing deliquescence of the cesium iodide scintillator layer, thereby improving the image quality of the DR flat panel detector. Therefore, the application effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all equivalent modifications and variations of the application be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. A method of fabricating a TFT core assembly for a DR panel detector, comprising the steps of:

2. The method of manufacturing a TFT core assembly of claim 1, wherein: the thickness of the aluminum film layer is 150A-250A.

3. The method of manufacturing a TFT core assembly of claim 1, wherein: the second glass substrate is a rigid glass substrate.

4. The method of manufacturing a TFT core assembly of claim 1, wherein: the thickness of the cesium iodide scintillator layer is 200-800 mu m.

5. The method of manufacturing a TFT core assembly of claim 1, wherein: the splicing mode of the at least two TFT substrates is short-side splicing, and the sizes of the at least two TFT substrates are the same.

6. The method for manufacturing a TFT core assembly as defined in any one of claims 1 to 5, wherein: the first adhesive and the second adhesive are both optical adhesive OCA.

7. A TFT core assembly for a DR panel detector, the TFT core assembly comprising:

8. The TFT module of claim 7, wherein: the thickness of the aluminum film layer is 150A-250A.

9. The TFT module of claim 7, wherein: the second glass substrate is a rigid glass substrate.

10. The TFT module of claim 7, wherein: the sizes of the at least two TFT substrates are the same, and the splicing mode of the at least two TFT substrates is short-side splicing.

11. The TFT module of claim 7, wherein: the thickness of the first packaging layer is the same as that of the second packaging layer and is 20-50 mu m.

12. A DR flat panel detector comprising at least a TFT core assembly as claimed in any one of claims 8 to 11.