CN1167139C - Light emitting diode and its preparation method - Google Patents
Light emitting diode and its preparation method Download PDFInfo
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- CN1167139C CN1167139C CNB011314001A CN01131400A CN1167139C CN 1167139 C CN1167139 C CN 1167139C CN B011314001 A CNB011314001 A CN B011314001A CN 01131400 A CN01131400 A CN 01131400A CN 1167139 C CN1167139 C CN 1167139C
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Abstract
The present invention relates to a light emitting diode and a manufacture method thereof. A transparent adhesion layer which does not absorb light is adopted to be stuck with a light emitting diode chip provided with an absorption substrate and a transparent substrate. The absorption substrate is removed subsequently to form a light emitting diode with the transparent substrate. The adopted transparent substrate can not absorb light, and thus, the light emitting efficiency of the light emitting diode can be greatly enhanced. Meanwhile, an ohmic contact and a band electrode layer are connected by a channel, and voltage can be reduced and current distribution can be enhanced under a fixed current to enhance the light emitting efficiency of the light emitting diode.
Description
Technical field
The invention relates to a kind of light-emitting diode (Light Emitting Diode; LED) chip structure and manufacture method thereof, particularly a kind of relevant AlGaInP (AlGaInP) light-emitting diode structure and manufacture method thereof.
Background technology
Traditional AlGaInP light-emitting diode has a double-heterostructure (DoubleHeterostructure; DH), it is constructed as shown in Figure 6, is to grow up an aluminium content in the n of 70%-100% type (AlxGa1-x) on n p type gallium arensidep (GaAs) substrate (Substrate) 3
0.5In
0.5The following coating layer 4 of P, one (AlxGa1-x)
0.5In
0.5The active layer 5 of P, an aluminium content are in the p of 70%-100% type (AlxGa1-x)
0.5In
0.5The last coating layer 6 of P, and the electric current dispersion layer (CurrentSpreading Layer) 7 of the high energy gap of a p type, the material of this one deck can be gallium phosphide, gallium arsenide phosphide, InGaP or aluminum gallium arsenide etc.
Then utilize the composition that changes active layer 5, just can change the lumination of light emitting diode wavelength, make the wavelength of its generation from the 650nm redness to the pure green of 555nm.But this traditional light-emitting diode has a shortcoming, be exactly the light that active layer produces, when down being incident to GaAs substrate 3, because the energy gap of GaAs substrate 3 is less, therefore the light that is incident to GaAs substrate 3 will be absorbed, and can't produce high efficiency light-emitting diode.
For fear of the extinction of substrate 3, have some documents to expose the technology of LED traditionally, yet these technology all have its shortcoming and restriction.For example people such as Sugawara is published in [Appl.Phys Lett.Vol.61,1775-1777 (1992)] and has just disclosed a kind of utilization and add one deck and disperse Bragg reflecting layer (DistributedBragg Reflector; DBR) on the GaAs substrate, being reflected into the light of directive GaAs substrate, and reducing the GaAs substrate and absorb, yet because so effect and little is venerated for effectively reflecting near the luminous energy that is normally incident in the GaAs substrate in the DBR reflector.
People such as Kish be published in [Appl.Phys Lett.Vol.64, No.21,2839, the document of (1994), name is called " Very high-efficiencysemiconductor wafer-bonded transparent-substrate (AlxGa1-x)
0.5In
0.5P/GaP ", disclose the transparent mode substrate (Transparent-Substrate of a kind of gluing wafer (Wafer bonding); TS) (AlxGa1-x)
0.5In
0.5The P/GaP light-emitting diode.This TS AlGaInP LED utilizes gas phase brilliant method (VPE) of heap of stone and P type gallium phosphide (GaP) window (Window) layer of formation thickness quite thick (about 50 μ m), and then with known chemical method for etching, optionally removes N p type gallium arensidep (GaAs) substrate.Then with this N type (Al that exposes
xGa
1x)
0.5In
0.5Coating layer under the P, gluing to thickness are about on the n type gallium phosphide substrate of 8-10mil.
Because this wafer gluing (Wafer Bonding) is with two kinds of direct gluings of III-V compound semiconductor together, therefore will be under higher temperature, heating and pressurizing a period of time just can finish.With regard to luminosity, prepared by this way TSAlGaInP LED is than the absorption substrate (Absorbing-Substrate of tradition; AS) more than the big twice of its brightness of AlGaInP LED.Yet the shortcoming of this TS AlGaInP LED is exactly that manufacture process is too numerous and diverse, and can have the high-ohmic of a non-ohm contact at joint interface usually, therefore, can't obtain high production yield and be difficult to reduce manufacturing cost.
Another kind of conventional art, for example people such as Horng is published in [Appl.Phys.Lett.Vol.75, No.20,3054 (1999) documents, name is called " AlGaInPlight-emitting diodes with mirror substrates fabricatedby wafer bonding "].People such as Horng disclose a kind of chip integration technology of utilizing to form minute surface substrate (Mirror-Substrate; MS) AlGaInP/metal/silica/silicon LED.Its use AuBe/Au as adhesion material to engage silicon substrate and LED epitaxial layer.Yet under the 20mA operating current, the luminous intensity of this MS AlGaInPLED only is about 90mcd, still lacks four ten at least percent than the luminous intensity of TS AlGaInP LED, so its luminous intensity can't be satisfactory.
Summary of the invention
Main purpose of the present invention is, a kind of light-emitting diode and manufacture method thereof are provided, and it provides a simple LED chip to cohere structure, can carry out chip under lower temperature and cohere, and reduces the problem that V group element volatilizees in the process of cohering.And, therefore can significantly promote the luminous efficiency of LED owing to there is not the shortcoming of substrate extinction.
Processing procedure of the present invention is simple, and can adopt the transparency carrier of low cost such as glass, therefore can obtain the volume production result of high yield and low cost.
The present invention is connected by channel can obtain preferable photoelectric characteristic, decides under the electric current less voltage is arranged identical, and preferable CURRENT DISTRIBUTION.Depress in same electrical, can obtain preferable luminous intensity.
Light-emitting diode of the present invention is to adopt a transparent bonding coat, engages a light-emitting diode and a transparency carrier, therefore, even if light-emitting diode epi-wafer surface irregularity also can utilize bonding coat that it closely is bonded together.
In sum, the invention provides a kind of light emitting diode construction, its structure comprises that one has the multilayer epitaxial structure of a luminescent layer, is combined with a transparency carrier by a bonding coat.The luminescent layer of this diode can be homostyructure (Homostructure), single heterojunction structure (Single heterostructure, SH), double-heterostructure (Double heterostructure, DH) or the multiple quantum trap structure (Multiquantum wells, MQWs).
Light emitting diode construction also comprises the first ohmic contact metal electrode layer and the second ohmic contact metal electrode layer.The first ohmic contact metal electrode layer is connected with the first peg line electrode layer by channel, the second peg line electrode layer is above the second ohmic contact metal electrode layer, and making win peg line electrode layer and the second peg line electrode layer is being to be positioned at the same side with respect to transparency carrier.
In addition, the present invention more provides a kind of manufacturing method for LED.At first, on the light-emitting diode epitaxial layer, form the first ohmic contact metal electrode layer.Then, by a transparent bonding coat, as BCB (B-staged bisbenzocyclobutene; BCB) resin, the material of bonding coat used in the present invention is not limited to the BCB resin, and other has the material that sticks together that similarity can form pellucidity, as epoxy resin (Epoxy), all is applicable to the present invention.Light-emitting diode epitaxial layer, the first ohmic contact metal electrode layer are combined with transparency carrier, and light emitting diode base plate is removed to the conductivity type etch stop layer.
Secondly, divide two parts etching, so that can communicate with the first ohmic contact metal electrode layer.First partly, and the wide about 3～6mils of large tracts of land etching is etched to the first conductivity type epitaxial layer.Second portion, the passage of the wide about 1～3mils of etching, and be etched to the first ohmic contact metal electrode layer.Next, form the first peg line electrode layer, allow the first peg line electrode layer and the first ohmic contact metal electrode layer communicate.Form the second ohmic contact metal electrode layer and the second peg line electrode layer at last again.Therefore, the first peg line electrode layer and the second peg line electrode layer are to be positioned at the same side with respect to transparency carrier.
An advantage of the present invention is cohered structure for the invention provides a simple LED chip, can carry out chip under lower temperature and cohere, and reduces the problem that V group element volatilizees in the process of cohering.And, therefore can significantly promote the luminous efficiency of LED owing to there is not the shortcoming of substrate extinction.
Another advantage of the present invention for processing procedure is simple, and can adopt transparency carrier cheaply such as glass, therefore can obtain high yield and volume production result cheaply.
Advantage more of the present invention can obtain preferable photoelectric characteristic for being connected by channel, decides under the electric current less voltage is arranged identical, and preferable CURRENT DISTRIBUTION.Depress in same electrical, can obtain preferable luminous intensity.
Advantage more of the present invention, for light-emitting diode of the present invention is to adopt a soft transparent bonding coat, engage a light-emitting diode and a transparency carrier, therefore, even if light-emitting diode epi-wafer surface irregularity also can utilize bonding coat that it closely is bonded together.
Description of drawings
Preferred embodiment of the present invention will be aided with following accompanying drawing and do more detailed narration in comment backward, wherein:
Fig. 1 to Fig. 3 is the manufacturing process schematic diagram that illustrates according to the light-emitting diode of a preferred embodiment of the present invention;
Fig. 4 to Fig. 5 illustrates another preferred embodiment light-emitting diode structure schematic diagram of the present invention; And
Fig. 6 illustrates traditional light emitting diode construction schematic diagram.
Embodiment
The present invention discloses a kind of light emitting diode construction and manufacture method thereof.More detailed and complete for the narration that makes the present invention, can and cooperate the icon of Fig. 1 to Fig. 3 with reference to following description.
At first please be earlier with reference to Fig. 1, the epitaxial structure of light-emitting diode of the present invention comprises N p type gallium arensidep (GaAs) substrate 26, etch stop layer (Etching StopLayer) 24, the N type AlGaInP (AlxGa1-x) of storehouse in regular turn
0.5In
0.5Following coating (Cladding) layer 22 and the AlGaInP (AlxGa1-x) of P
0.5In
0.5The active layer of P (Active Layer) 20, P type AlGaInP (AlxGa1-x)
0.5In
0.5The last coating layer 18 of P and P type ohmic contact epitaxial layer (Ohmic Contact EpitaxialLayer) 16.Then, on P type ohmic contact epitaxial layer 16, form P type ohmic contact metal electrode layer 28.
The material of P type ohmic contact epitaxial layer 16 can be aluminum gallium arsenide, AlGaInP or gallium arsenide phosphide, venerate and want its energy gap greater than active layer 20, can not absorb the light that active layer produces, but must have high carrier concentration, be beneficial to form ohmic contact, just can be chosen as P type ohmic contact epitaxial layer 16.
Above-mentioned active layer 20, the scope of its aluminium content are in x=0～0.45, and its aluminium content of upper and lower coating layer is controlled at x=0.5～1.0 approximately, and when the aluminium content x=0 of active layer 20, the composition of active layer is Ga
0.5In
0.5P, and the wavelength X d of light-emitting diode is at 635nm approximately.
The ratio of above-claimed cpd, for example active layer (AlxGa1-x)
0.5In
0.5P only is to enumerate a preferred example, is not that the present invention is equally applicable to other ratio in order to restriction the present invention.In addition in the present invention, the structure of AlGaInP active layer 20 can be to adopt traditional homostyructure (Homostructure), single heterojunction structure (Single Heterostructure), double-heterostructure (DoubleHeterostructure; DH) or multiple quantum trap (Multiple QuantumWell; MQW).So-called double-heterostructure (DH) promptly comprises N type AlGaInP (Al shown in Figure 1
xGa
1-x)
0.5In
0.5A coating layer 22 and an AlGaInP (Al under the P
xGa
1-x)
0.5In
0.5P active layer 20, a P type AlGaInP (Al
xGa
1-x)
0.5In
0.5The last coating layer 18 of P, wherein this preferred thickness of three layers is about 0.5～3.0,0.5～2.0,0.5～3.0 μ m respectively.
The material of etch stop layer 24 can be the compound semiconductor of any III-V family element in the present invention,, its lattice constant produces difference row as long as can being complementary with GaAs substrate 26, and etch-rate is the substrate of being formed far below by the GaAs material 26, just can be used as etch stop layer 24.
The preferable material of etch stop layer 24 can be InGaP (InGaP) or aluminum gallium arsenide (AlGaAs) in the present invention.The etch-rate of coating layer 22 is also far below GaAs substrate 26 under present embodiment N type AlGaInP.Therefore, as long as its thickness is thicker, also can not need the different epitaxial layer of another layer composition to be used as etch stop layer.
Then, provide structure as shown in Figure 2, this structure comprises transparent bonding coat 14, and employed material can be BCB (B-staged bisbenzocyclobutene; BCB) resin and a transparency carrier (Transparent Substrate; TS) 10.The material of bonding coat 14 used in the present invention is not limited to the BCB resin, and other has the material that sticks together that similarity can form pellucidity, as epoxy resin, all is applicable to the present invention.
And transparency carrier can adopt glass, sapphire (Sapphire) chip, carborundum (SiC) chip, gallium phosphide (GaP) chip, gallium arsenide phosphide (GaAsP) chip, zinc selenide (ZnSe) chip, zinc sulphide (ZnS) chip and selenium zinc sulphide (ZnSSe) chip etc., as long as these chips do not have very big absorption for the light that luminescent layer 20 sends, can be used as transparency carrier 10 of the present invention.And if another advantage of the present invention is a not necessarily single-chip of employed transparency carrier 10, because during lumination of light emitting diode, electric current prevents that the light-emitting diode epitaxial layer from breaking not by transparency carrier 10 so the purpose of transparency carrier 10 just is used as a mechanical support in making the crystal grain process.So transparency carrier 10 also can use compound crystal (Polycrystal) substrate or amorphous (Amorphous) substrate, significantly to reduce production costs.
Then Fig. 1 has been formed the light-emitting diode chip for backlight unit of P type ohmic contact metal electrode layer 28 and the transparency carrier 10 of Fig. 2 and sticked together by BCB bonding coat 14, the process of sticking together is to finish the high-temperature pressurizing heating a period of time about 250 ℃.In order to improve the engagement characteristics between light-emitting diode epi-wafer and the transparency carrier 10, also can follow promoter at the surface coated last layer of light-emitting diode epi-wafer and transparency carrier 10, and then being coated with upward BCB, the high-temperature pressurizing heating a period of time about 250 ℃ is finished the bonding of epi-wafer and transparency carrier 10.In order to make the better effects if of binding, also can be with light-emitting diode epi-wafer and transparency carrier 10 with the BCB14 gluing, earlier low-temperature heat a period of time of 60 ℃～100 ℃, again the organic solvent in the BCB is caught up with, and then the scope of elevated temperature to 200 ℃～600 ℃, allow transparent bonding coat 14 and light-emitting diode epi-wafer and transparency carrier 10 be bonded together closely.
Stick together good epi-wafer, follow with corrosive liquid (as 5H
3PO
4: 3H
2O
2: 3H
2O or 1NH
4OH: 35H
2O
2) corrosion, lighttight N p type gallium arensidep substrate 26 is removed.If etch stop layer 24 adopts InGaP or AlGaAs still can absorb the light that active layer 20 produces.Therefore, also must remove fully, or only stay the part that contacts with N type ohmic contact metal electrode layer 30 with corrosive liquid.Divide two parts then, carry out etching with dry-etching method such as RIE.
At first, the wide about 3～6mils of large tracts of land etching, with coating layer 22 under the part N type AlGaInP, coating layer 18 and part P type ohmic contact epitaxial layer 16 are removed on AlGaInP active layer 20 and the P type AlGaInP.Then, the part of wide about 1～3mils is removed below the P type ohmic contact epitaxial layer 16 that comes out, and is etched into a channel that exposes P type ohmic contact metal electrode layer 28.Then, form N type ohmic contact metal electrode layer 30 on coating layer 22 under the N type AlGaInP.At last, form nail line metal level 32, for example aluminium (Al) or gold (Au), respectively on P type ohmic contact epitaxial layer 16 with channel in, make it possible to P type ohmic contact electrode layer 28 form be electrically connected logical, and on the N type ohmic contact metal electrode layer 30.So, just formed two peg line electrode layers 32 with respect to transparency carrier, all at the light emitting diode construction of the same side, as shown in Figure 3.
The optical wavelength of being sent according to the AlGaInP light-emitting diode of gained of the present invention is about 635nm, and under the operating current of 20mA, its optical output power is about 4mW, is more than 2 times of optical output power of traditional absorption substrate AlGaInP light-emitting diode.
The present invention is not limited to only be applicable to high brightness AlGaInP light-emitting diode, and the present invention also goes for other light LED material, as aluminum gallium arsenide redness and infrared light-emitting diode.
Fig. 4 is the epitaxial structure schematic diagram of second embodiment of the invention.The epitaxial structure of 650nm aluminum gallium arsenide red light emitting diodes of the present invention comprises coating layer 52 under the N p type gallium arensidep substrate 51, N type aluminum gallium arsenide of storehouse in regular turn, aluminium content about 70～80%, the about 0.5 μ m of thickness～3 μ m, aluminum gallium arsenide active layer 53, aluminium content about 35%, coating layer 54 on the about 0.5 μ m of thickness～2 μ m and the P type aluminum gallium arsenide, aluminium content is about 70～80%, the about 0.5 μ m of thickness～3 μ m.Then, as shown in Figure 5, form P type ohmic contact metal electrode layer 57 on coating layer 54 on the P type aluminum gallium arsenide, and, stick together with BCB silicones 55 with an above-mentioned aluminum gallium arsenide red light emitting diodes epi-wafer and a transparency carrier 56 (as the sapphire chip).
Sticking together good epi-wafer follows with corrosive liquid (as NH
4OH: H
2O
2=1.7: 1) corrosion, lighttight N p type gallium arensidep substrate 51 is removed.Then, to coating layer 52 under the N type aluminum gallium arsenide partly with wet etching or dry-etching method, and coating layer 54 is removed on aluminum gallium arsenide active layer 53 and the P type aluminum gallium arsenide, and is forming channel on the coating layer 54 on the P type aluminum gallium arsenide, exposes P type ohmic contact metal electrode layer 57.Therefore, make the peg line electrode layer 59 that forms to communicate with P type ohmic contact metal electrode layer 57.At last, form N type ohmic contact metal electrode layer 58 and peg line electrode layer 59, for example aluminium (Al) or gold (Au), on coating layer 52 under the N type aluminum gallium arsenide, just two peg line electrode layers 59 have been formed with respect to transparency carrier 56, all at the light-emitting diode of the same side, as shown in Figure 5.
The optical wavelength of being sent according to the red aluminum gallium arsenide light-emitting diode of gained of the present invention is about 650nm, and under the operating current of 20mA, and its optical output power is 2 times of optical output power of traditional absorption substrate aluminum gallium arsenide light-emitting diode.
Light-emitting diode of the present invention is owing to adopt transparency carrier 10, and by channel make two peg line electrode layers 32 all the position in the same side of transparency carrier 10, therefore mode that can compound crystal (Flip Chip) encapsulates, and not needing to adopt traditional metal routing (Wire Bonding), the reliability of assembly is preferable.And because transparency carrier 10 extinction not, the brightness of light-emitting diode can significantly increase.In addition, transparency carrier is as adopting materials such as sapphire, glass or carborundum, because these materials are stone, so substrate thickness can be reduced to about 100 microns, and can in die process or encapsulation procedure, not break, can produce the less light-emitting diode of thinner thickness and volume.
Light-emitting diode of the present invention is to adopt a soft transparent bonding coat 14 to engage a light-emitting diode and a transparency carrier 10, therefore, even if light-emitting diode epi-wafer surface irregularity also can utilize bonding coat 14 that it closely is bonded together.
The above is preferred embodiment of the present invention only, is not in order to limiting claim of the present invention, and all other do not break away from the equivalence of being finished under the disclosed spirit and change or modify, and all should be included in the following claim.
Claims (24)
1, a kind of light-emitting diode is characterized in that, comprises:
One multilayer AlGaInP stacked crystal layer structure, this stacked crystal layer structure comprises coating layer on, an active layer, and coating layer once;
One ohmic contact epitaxial layer is formed on this on coating layer;
One first ohmic contact metal electrode layer is formed on this ohmic contact epitaxial layer;
One transparent bonding coat;
One transparency carrier is bonded on this first ohmic contact metal electrode layer by described transparent bonding coat;
One second ohmic contact metal electrode layer is formed on this time coating layer;
One first peg line electrode layer is formed on this ohmic contact epitaxial layer;
One second peg line electrode layer is formed on this second ohmic contact metal electrode layer; And
One electrode channel is in order to be electrically connected this first peg line electrode layer and this first ohmic contact metal electrode layer;
Wherein, with respect to this transparency carrier, this first peg line electrode layer and this second peg line electrode layer are to be positioned at the same side.
2, light-emitting diode as claimed in claim 1 is characterized in that, wherein this multilayer AlGaInP stacked crystal layer structure is a kind of in the middle of homostyructure, single heterojunction structure, double-heterostructure or the quantum well structures for AlGaInP.
3, light-emitting diode as claimed in claim 1 is characterized in that, wherein this transparency carrier is to be selected from compound crystal substrate or amorphous substrate.
4, light-emitting diode as claimed in claim 1 is characterized in that, wherein this transparency carrier is to be selected from sapphire, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, zinc selenide sulphur or carborundum.
5, light-emitting diode as claimed in claim 1 is characterized in that, wherein the material of this transparent bonding coat comprises BCB resin or epoxy resin.
6, light-emitting diode as claimed in claim 1 is characterized in that, wherein this channel and this first peg line electrode layer are to be same substance.
7, a kind of manufacturing method for LED is characterized in that, comprises at least:
One substrate is provided;
Form an etch stop layer;
Form a multilayer AlGaInP stacked crystal layer structure on this substrate, this stacked crystal layer structure comprises coating layer, an active layer, coating layer on;
Form an ohmic contact epitaxial layer on coating layer on this;
Form one first ohmic contact metal electrode layer on this ohmic contact epitaxial layer;
One transparency carrier is provided;
Be coated with a soft transparent bonding coat on this transparency carrier, in order to bind this transparency carrier and this first ohmic contact metal electrode layer;
Remove this substrate and this termination etch layer;
Remove this multilayer AlGaInP stacked crystal layer structure and this ohmic contact epitaxial layer partly, partial depth up to this ohmic contact epitaxial layer, open and make this ohmic contact epitaxial layer come out, and form a channel on this ohmic contact epitaxial layer, this channel makes this first ohmic contact metal electrode layer come out;
Form one first peg line electrode layer on this ohmic contact epitaxial layer that exposes with this channel in, this channel is in order to be electrically connected this first ohmic contact metal electrode layer;
Form one second ohmic contact metal electrode layer on this time coating layer; And
Form one second peg line electrode layer on this second ohmic contact metal electrode layer;
Wherein this first and this second peg line electrode layer, be the same side with respect to this transparency carrier.
8, manufacturing method for LED as claimed in claim 7 is characterized in that, wherein this multilayer AlGaInP structure is a kind of in the middle of homostyructure, single heterojunction structure, double-heterostructure or the quantum well structures that is selected from AlGaInP.
9, manufacturing method for LED as claimed in claim 7 is characterized in that, wherein this transparency carrier is to be selected from compound crystal substrate or amorphous substrate.
10, manufacturing method for LED as claimed in claim 7 is characterized in that, wherein this transparency carrier is to be selected from sapphire, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, zinc selenide sulphur or carborundum.
11, manufacturing method for LED as claimed in claim 7 is characterized in that, wherein the material of this transparent bonding coat comprises BCB resin or epoxy resin.
12, manufacturing method for LED as claimed in claim 7, it is characterized in that, wherein this transparent bonding coat engages the step on this transparency carrier and this light-emitting diode epitaxial layer surface, at least comprise following manner: the phase I pressurizes in 60 ℃～100 ℃ scopes and heats and forms, and second stage is pressurizeed in 200 ℃～600 ℃ scopes and heated and forms.
13, a kind of light-emitting diode is characterized in that, comprises:
One multilayer aluminum gallium arsenide stacked crystal layer structure, this stacked crystal layer structure comprises coating layer on, an active layer, and coating layer once;
One first ohmic contact metal electrode layer is formed on this multilayer phosphatization gallium aluminium stacked crystal layer structure;
One transparent bonding coat;
One transparency carrier is bonding on this first ohmic contact metal electrode layer with this transparent bonding coat;
One second ohmic contact metal electrode layer is formed on this time coating layer;
One first peg line electrode layer is formed on this first ohmic contact metal electrode layer;
One second peg line electrode layer is formed on this second ohmic contact metal electrode layer and is electrically connected with formation; And
One electrode channel is in order to be electrically connected this first peg line electrode layer and this first ohmic contact metal electrode layer;
Wherein, with respect to this transparency carrier, this first peg line electrode layer and this second peg line electrode layer are to be positioned at the same side.
14, light-emitting diode as claimed in claim 13 is characterized in that, wherein this multilayer aluminum gallium arsenide stacked crystal layer structure is a kind of in the middle of homostyructure, single heterojunction structure, double-heterostructure or the quantum well structures that is selected from aluminum gallium arsenide.
15, light-emitting diode as claimed in claim 13 is characterized in that, wherein this transparency carrier is to be selected from compound crystal substrate or amorphous substrate.
16, light-emitting diode as claimed in claim 13 is characterized in that, wherein this transparency carrier is to be selected from sapphire, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, zinc selenide sulphur or carborundum.
17, light-emitting diode as claimed in claim 13 is characterized in that, wherein the material of this transparent bonding coat comprises BCB resin or epoxy resin.
18, light-emitting diode as claimed in claim 13 is characterized in that, wherein this channel and this first peg line electrode layer are to be same substance.
19, a kind of manufacturing method for LED is characterized in that, comprises at least:
One substrate is provided;
Form a multilayer aluminum gallium arsenide stacked crystal layer structure on this substrate, this stacked crystal layer structure comprises coating layer, an active layer, coating layer on;
Form one first ohmic contact metal electrode layer on this multilayer aluminum gallium arsenide stacked crystal layer structure;
One transparency carrier is provided;
Be coated with a soft transparent bonding coat on this transparency carrier, in order to bind this transparency carrier and this first ohmic contact metal electrode layer;
Remove this substrate;
Remove this multilayer aluminum gallium arsenide stacked crystal layer structure partly, partial depth of coating layer on this, and make that should go up coating layer comes out, and on this, form a channel on the coating layer, this channel makes this first ohmic contact metal electrode layer come out;
Form one first peg line electrode layer in should going up on coating layer of exposing and this channel, this channel is in order to be electrically connected this first ohmic contact metal electrode layer;
Form one second ohmic contact metal electrode layer on this time coating layer; And
Form one second peg line electrode layer on this second ohmic contact metal electrode layer;
Wherein this first and this second peg line electrode layer, be the same side with respect to this transparency carrier.
20, manufacturing method for LED as claimed in claim 19 is characterized in that, wherein this multilayer aluminum gallium arsenide structure is a kind of in the middle of homostyructure, single heterojunction structure, double-heterostructure or the quantum well structures that is selected from aluminum gallium arsenide.
21, manufacturing method for LED as claimed in claim 19 is characterized in that, wherein this transparency carrier is to be selected from compound crystal substrate or amorphous substrate.
22, manufacturing method for LED as claimed in claim 19 is characterized in that, wherein this transparency carrier is to be selected from sapphire, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, zinc selenide sulphur or carborundum.
23, manufacturing method for LED as claimed in claim 19 is characterized in that, wherein the material of this transparent bonding coat comprises BCB resin or epoxy resin.
24, manufacturing method for LED as claimed in claim 19, it is characterized in that, wherein this transparent bonding coat engages the step on this transparency carrier and this light-emitting diode epitaxial layer surface, at least comprise following manner: the phase I pressurizes in 60 ℃～100 ℃ scopes and heats and forms, and second stage is pressurizeed in 200 ℃～600 ℃ scopes and heated and forms.
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| CN100477300C (en) * | 2003-10-27 | 2009-04-08 | 洲磊科技股份有限公司 | Method of forming optoelectronic elements |
| CN1332454C (en) * | 2004-10-20 | 2007-08-15 | 晶元光电股份有限公司 | Method for making a semiconductor light emitting element |
| CN102412349A (en) * | 2010-09-17 | 2012-04-11 | 柏光照明股份有限公司 | Semiconductor light-emitting component and fabrication method thereof |
| CN104617195B (en) * | 2015-02-06 | 2017-10-17 | 扬州乾照光电有限公司 | A kind of near-infrared luminous diode and its production method |
-
2001
- 2001-10-31 CN CNB011314001A patent/CN1167139C/en not_active Expired - Lifetime
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