CN116583163A - Preparation method of semiconductor refrigerator adopting flexible interconnection - Google Patents
Preparation method of semiconductor refrigerator adopting flexible interconnection Download PDFInfo
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- CN116583163A CN116583163A CN202310527890.0A CN202310527890A CN116583163A CN 116583163 A CN116583163 A CN 116583163A CN 202310527890 A CN202310527890 A CN 202310527890A CN 116583163 A CN116583163 A CN 116583163A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 263
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 226
- 239000000758 substrate Substances 0.000 claims abstract description 60
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 33
- 239000010439 graphite Substances 0.000 claims abstract description 33
- 238000003466 welding Methods 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000005476 soldering Methods 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 5
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical group [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Interconnections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
The invention discloses a preparation method of a semiconductor refrigerator adopting flexible interconnection, which comprises the following steps: providing a first substrate and a second substrate; etching the first substrate and the second substrate to form a first conductive structure and a second conductive structure; providing first N-type semiconductor particles and first P-type semiconductor particles, filling the first N-type semiconductor particles and the first P-type semiconductor particles in a graphite tool, and welding the first N-type semiconductor particles and the first P-type semiconductor particles with a first conductive structure; providing second N-type semiconductor particles and second P-type semiconductor particles, filling the second N-type semiconductor particles and the second P-type semiconductor particles in a graphite tool, and welding the second N-type semiconductor particles and the second P-type semiconductor particles with a second conductive structure; copper wires are bonded between the first N-type semiconductor particles and the second N-type semiconductor particles, and between the first P-type semiconductor particles and the second P-type semiconductor particles. The invention can ensure the preparation quality of the semiconductor refrigerator.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a preparation method of a semiconductor refrigerator adopting flexible interconnection.
Background
A semiconductor refrigerator (TEC) is manufactured by using the peltier effect of semiconductor materials, which is a phenomenon in which when a direct current passes through a couple composed of two semiconductor materials, one end absorbs heat and the other end releases heat.
In the prior art, TECs comprise a plurality of P-type and N-type pairs (sets) that are connected together by metal electrodes and sandwiched between two ceramic substrates; when current flows through the TEC, heat generated by the current can be transferred from one side of the TEC to the other side, and a hot end and a cold end are generated on the TEC, namely the heating and refrigerating principles of the TEC. However, for the monolithic TEC, the hot end and the cold end are interconnected by means of semiconductor materials, the cold end and the hot end cannot be separated, the shape cannot be changed, and the application scene is limited.
Accordingly, there is a need to improve upon the deficiencies in the prior art.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a preparation method of a semiconductor refrigerator adopting flexible interconnection. The technical problems to be solved by the invention are realized by the following technical scheme:
in a first aspect, the present invention provides a method of manufacturing a semiconductor refrigerator employing flexible interconnection, comprising:
providing a first substrate and a second substrate which are oppositely arranged and are arranged at intervals;
etching one side of the first substrate, which is close to the second substrate, to form a first conductive structure, and etching one side of the second substrate, which is close to the first substrate, to form a second conductive structure; the first conductive structures and the second conductive structures are arranged at intervals;
providing first N-type semiconductor particles and first P-type semiconductor particles, printing soldering paste on the side surfaces of the first N-type semiconductor particles and the first P-type semiconductor particles, filling the first N-type semiconductor particles and the first P-type semiconductor particles in a graphite tool, and welding the side surfaces of the first N-type semiconductor particles and the first P-type semiconductor particles, on which the soldering paste is printed, with a first conductive structure by using welding equipment; the first N-type semiconductor particles and the first P-type semiconductor particles welded on the first conductive structure are alternately and alternately arranged at intervals;
providing second N-type semiconductor particles and second P-type semiconductor particles, printing soldering paste on the side surfaces of the second N-type semiconductor particles and the second P-type semiconductor particles, filling the second N-type semiconductor particles and the second P-type semiconductor particles in a graphite tool, and welding the side surfaces of the second N-type semiconductor particles and the second P-type semiconductor particles, on which the soldering paste is printed, with a second conductive structure by using welding equipment; the second N-type semiconductor particles and the second P-type semiconductor particles welded on the second conductive structure are alternately and alternately arranged, the first N-type semiconductor particles on the first conductive structure are in one-to-one correspondence with the second N-type semiconductor particles on the second conductive structure, and the first P-type semiconductor particles on the first conductive structure are in one-to-one correspondence with the second P-type semiconductor particles on the second conductive structure;
copper wires are welded between the first N-type semiconductor particles and the second N-type semiconductor particles, and copper wires are welded between the first P-type semiconductor particles and the second P-type semiconductor particles.
The invention has the beneficial effects that:
according to the preparation method of the semiconductor refrigerator adopting flexible interconnection, the first N-type semiconductor particles, the second N-type semiconductor particles and the first P-type semiconductor particles are flexibly and electrically connected, the first N-type semiconductor particles, the second N-type semiconductor particles, the first P-type semiconductor particles and the second P-type semiconductor particles are fixed in a graphite tool mode, the first N-type semiconductor particles and the first P-type semiconductor particles are welded on the first semiconductor structure by adopting welding equipment, the second N-type semiconductor particles and the second P-type semiconductor particles are welded on the second conductive structure, a stable and effective fixing mode can be provided, the efficiency of preparing the semiconductor refrigerator is improved, and the preparation quality of the semiconductor refrigerator can be ensured in a graphite tool mode.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a flow chart of a method for manufacturing a semiconductor refrigerator using flexible interconnection according to an embodiment of the present invention;
FIG. 2 is another flow chart of a method of manufacturing a semiconductor refrigerator employing flexible interconnections provided in an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a semiconductor refrigerator according to an embodiment of the present invention;
FIG. 4 is a schematic view of a graphite substrate according to an embodiment of the present invention;
fig. 5 is a schematic structural view of a graphite cover plate according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
In the prior art, the semiconductor refrigerator comprises flexible heat conducting substrates which are arranged oppositely, a plurality of semiconductor thermoelectric particles which are fixed between the flexible heat conducting substrates and are connected in series in sequence, namely a P-type semiconductor and an N-type semiconductor, wherein the semiconductor thermoelectric particles are electrically and insulatively connected with the flexible heat conducting substrates, and the orderly increase of the size can be realized by adopting a multi-stage series thermoelectric refrigeration module, and various shapes and sizes can be converted; however, in the prior art, the hot end and the cold end are still interconnected by the semiconductor material, and the cold end and the hot end are not spatially separated.
In view of the above, the invention provides a method for manufacturing a semiconductor refrigerator by flexible interconnection, which uses a copper wire welding mode to realize flexible interconnection of the semiconductor refrigerator and complete separation of a hot end and a cold end of the semiconductor refrigerator in space.
Referring to fig. 1 and 2, fig. 1 is a flowchart of a method for manufacturing a semiconductor refrigerator using flexible interconnection according to an embodiment of the present invention, and fig. 2 is another flowchart of a method for manufacturing a semiconductor refrigerator using flexible interconnection according to an embodiment of the present invention, where the method for manufacturing a semiconductor refrigerator using flexible interconnection includes:
s101, providing a first substrate 1 and a second substrate 5, wherein the first substrate 1 and the second substrate 5 are oppositely arranged and are arranged at intervals; s102, etching one side of the first substrate 1 close to the second substrate 5 to form a first conductive structure 6-1, and etching one side of the second substrate 5 close to the first substrate 1 to form a second conductive structure 6-2; wherein the first conductive structures 6-1 and the second conductive structures 6-2 are arranged at intervals;
s103, providing first N-type semiconductor particles 2-1 and first P-type semiconductor particles 2-2, printing soldering paste on the side surfaces of the first N-type semiconductor particles 2-1 and the first P-type semiconductor particles 2-2, filling the first N-type semiconductor particles 2-1 and the first P-type semiconductor particles 2-2 in a graphite tool, and welding the side surfaces of the first N-type semiconductor particles 2-1 and the first P-type semiconductor particles 2-2, on which the soldering paste is printed, with the first conductive structure 6-1 by using welding equipment; wherein the first N-type semiconductor particles 2-1 and the first P-type semiconductor particles 2-2 welded on the first conductive structure 6-1 are alternately and alternately arranged at intervals;
s104, providing second N-type semiconductor particles 4-1 and second P-type semiconductor particles 4-2, printing soldering paste on the side surfaces of the second N-type semiconductor particles 4-1 and the second P-type semiconductor particles 4-2, filling the second N-type semiconductor particles 4-1 and the second P-type semiconductor particles 4-2 in a graphite tool, and welding the side surfaces of the second N-type semiconductor particles 4-1 and the second P-type semiconductor particles 4-2, on which the soldering paste is printed, with the second conductive structure 6-2 by using welding equipment; the second N-type semiconductor particles 4-1 and the second P-type semiconductor particles 4-2 welded on the second conductive structure 6-2 are alternately and alternately arranged at intervals, and the first N-type semiconductor particles 2-1 on the first conductive structure 6-1 are in one-to-one correspondence with the second N-type semiconductor particles 4-1 on the second conductive structure 6-2, and the first P-type semiconductor particles 2-2 on the first conductive structure 6-1 are in one-to-one correspondence with the second P-type semiconductor particles 4-2 on the second conductive structure 6-2;
s105, copper wires 3 are welded between the first N-type semiconductor particles 2-1 and the second N-type semiconductor particles 4-1, and copper wires 3 are welded between the first P-type semiconductor particles 2-2 and the second P-type semiconductor particles 4-2.
Specifically, please continue to refer to fig. 1 and fig. 2, the present invention provides a method for preparing a semiconductor refrigerator using flexible interconnection, providing a first substrate 1 and a second substrate 5, wherein the first substrate 1 and the second substrate 5 are ceramic copper-clad plates, a copper foil is directly covered on the ceramic substrate by introducing a proper amount of oxygen elements and using a hot pressing technology to realize metallization of the surface of the ceramic substrate, etching is performed on copper-clad surfaces of the first substrate 1 and the second substrate 5 to form a first conductive structure 6-1 and a second conductive structure 6-2, a first N-type semiconductor particle 2-1 and a first P-type semiconductor particle 2-2 are manufactured on the first conductive structure 6-1, a second N-type semiconductor particle 4-1 and a second P-type semiconductor particle 4-2 are manufactured on the second conductive structure 6-2, the first N-type semiconductor particle 2-1 and the second N-type semiconductor particle 4-1 are in one-to one correspondence, the first P-type semiconductor particle 2-2 and the second P-type semiconductor particle 4-2 are in one-to connect the first N-type semiconductor particle 2 and the second P-type semiconductor particle 4-2 through the first N-type semiconductor particle 2-3-2 copper wire; considering that the first N-type semiconductor particle 2-1 and the second N-type semiconductor particle 4-1, and the first P-type semiconductor particle 2-2 and the second P-type semiconductor particle 4-2 are electrically connected in a flexible manner, the first N-type semiconductor particle 2-1, the second N-type semiconductor particle 4-1, the first P-type semiconductor particle 2-2, and the second P-type semiconductor particle 4-2 are fixed by adopting a graphite tooling manner, the first N-type semiconductor particle 2-1 and the first P-type semiconductor particle 2-2 are welded on the first semiconductor structure by adopting a welding device, and the second N-type semiconductor particle 4-1 and the second P-type semiconductor particle 4-2 are welded on the second conductive structure 6-2, and a stable and effective fixing manner can be provided by adopting a graphite tooling manner, so that the efficiency of preparing the semiconductor refrigerator can be improved, and the preparation quality of the semiconductor refrigerator can be ensured.
In addition, referring to fig. 3, fig. 3 is a schematic structural diagram of a semiconductor refrigerator according to an embodiment of the present invention, in this embodiment, when a direct current flows from an N-type semiconductor particle to a P-type semiconductor particle, an endothermic phenomenon is generated on a corresponding conductive structure, and the end is a cold end; when direct current flows from the P-type semiconductor particles to the N-type semiconductor particles, a heat release phenomenon is generated on the corresponding conductive structure, the heat end is the hot end, and if the direct current direction is changed, the cold end and the hot end are exchanged; as shown in fig. 3, at the end of the first conductive structure 6-1, the direct current flows from the N-type semiconductor particles to the P-type semiconductor particles, and then the end of the second conductive structure 6-2 is the hot end; at the end of the first conductive structure 6-1, the direct current flows from the P-type semiconductor particles to the N-type semiconductor particles, and the end of the second conductive structure 6-2 is a cold end; in the prior art, the N-type semiconductor particles and the P-type semiconductor particles between the first conductive structure 6-1 and the second conductive structure 6-2 are whole, the straight line distance between the cold end and the hot end is very small, the shape cannot be changed, and the cold end and the hot end are not easy to be completely separated in space; in this embodiment, the first N-type semiconductor particles 2-1 and the second N-type semiconductor particles 4-1 are electrically connected by adopting a flexible connection manner, the first P-type semiconductor particles 2-2 and the second P-type semiconductor particles 4-2 are electrically connected, the length of the copper wire 3 is controllable, the distance between the cold end and the hot end is prolonged, the spatial separation between the cold end and the hot end is realized, and the performance of the semiconductor refrigerator can be ensured.
It should be noted that the embodiment shown in fig. 3 only schematically illustrates the positional relationship of the first substrate 1, the second substrate 5, the first conductive structure 6-1, the second conductive structure 6-2, the N-type semiconductor particles, the P-type semiconductor particles, and the copper wires 3, and does not represent the actual dimensions thereof.
In an alternative embodiment of the present invention, as shown in fig. 3, a first P-type semiconductor particle 2-2 and a first N-type semiconductor particle 2-1 are soldered onto the same first conductive structure 6-1, a first P-type semiconductor particle 4-2 and a second N-type semiconductor particle 4-1 are soldered onto the same second conductive structure 6-2, and the first P-type semiconductor particle 2-2, the first N-type semiconductor particle 2-1, the second P-type semiconductor particle 4-2 and the second N-type semiconductor particle 4-1 are connected in series.
Specifically, as shown in fig. 3, in this embodiment, in order to realize the serial connection of the N-type semiconductor particles and the P-type semiconductor particles on the first conductive structure 6-1, the N-type semiconductor particles and the P-type semiconductor particles on the second conductive structure 6-2 are connected in series, a first N-type semiconductor particle 2-1 and a first P-type semiconductor particle 2-2 are welded on the same first conductive structure 6-1, a second N-type semiconductor particle 4-1 and a second P-type semiconductor particle 4-2 are welded on the same second conductive structure 6-2, and the first N-type semiconductor particle 2-1 and the first P-type semiconductor particle 2-2, and the second N-type semiconductor particle 4-1 and the second P-type semiconductor particle 4-2 are respectively arranged in a serial connection manner; it should be noted that the direct current is applied to the first conductive structures 6-1 located at both ends of the first substrate 1 or the second conductive structures 6-2 located at both ends of the second substrate 5.
In an alternative embodiment of the present invention, please refer to fig. 4 and 5, fig. 4 is a schematic structural view of a graphite substrate provided by the embodiment of the present invention, fig. 5 is a schematic structural view of a graphite cover plate provided by the embodiment of the present invention, the graphite tooling comprises a graphite substrate 7 and a graphite cover plate 10, the graphite substrate 7 comprises a positioning through hole 8 and a particle filling hole 9, and the graphite cover plate 10 comprises a positioning bolt 12 and a lead through hole 11; the particle filling holes 9 are used for filling the first N-type semiconductor particles 2-1, the first P-type semiconductor particles 2-2, the second N-type semiconductor particles 4-1 and the second P-type semiconductor particles 4-2, the positioning bolts 12 are inserted into the positioning through holes 8 and used for assembling the graphite base plate 7 and the graphite cover plate 10, and the lead through holes 11 are used for providing wiring space for the copper wires 3.
Specifically, as shown in fig. 4 and 5, in the present embodiment, the N-type semiconductor particles and the P-type semiconductor particles are fixed through the particle filling holes 9 on the graphite substrate 7, and it should be noted that, according to the arrangement manner of the N-type semiconductor particles and the P-type semiconductor particles on the first conductive structure 6-1, the N-type semiconductor particles and the P-type semiconductor particles are filled in the particle filling holes 9, and after the positions of the N-type semiconductor particles and the P-type semiconductor particles and the conductive structure are aligned, the N-type semiconductor particles and the P-type semiconductor particles are welded by using a welding device; in addition, the assembly of the graphite base plate 7 and the graphite cover plate 10 is realized through the assembly of the positioning bolt 12 and the positioning through hole 8; it should also be noted that the wire through hole 11 is used to provide a space through the copper wire 3.
In an alternative embodiment of the invention, the solder paste is a tin silver copper solder paste.
Specifically, the solder paste of tin-silver-copper (SAC 305) is used in the present embodiment, so that good soldering of the N-type semiconductor particles and the P-type semiconductor particles to the conductive structure can be ensured.
In an alternative embodiment of the present invention, the copper wire 3 is soldered with the first N-type semiconductor particles 2-1, the first P-type semiconductor particles 2-2, the second N-type semiconductor particles 4-1 and the second P-type semiconductor particles 4-2 using Pb37Sn 63.
Specifically, in the present embodiment, the N-type semiconductor particles are soldered to the copper wire 3 using Pb37Sn63, and the P-type semiconductor particles are soldered to the copper wire 3 using Pb37Sn63, so that good conductivity of the copper wire 3 can be ensured.
In an alternative embodiment of the present invention, the materials of the first substrate 1 and the second substrate 5 are ceramic substrates.
Specifically, in this embodiment, the first substrate 1 and the second substrate 5 are ceramic copper clad plates, where the copper clad ceramic substrate is called ceramic copper clad plate for short, and Centrotherm DBC (Direct Bonding Copper) is provided, and the ceramic copper clad plate has characteristics of high heat conduction, high electrical insulation, high mechanical strength, low expansion, and the like of ceramic, and also has high conductivity and excellent welding performance of oxygen-free copper, and can etch various patterns like a PCB circuit board, and the connection of a chip part connection electrode or a connection surface is completed through a surface copper clad layer, no obvious intermediate layer exists between the ceramic and a metal interface, and the thermal diffusion capability is strong.
In an alternative embodiment of the present invention, the first P-type semiconductor particles 2-2, the first N-type semiconductor particles 2-1, the second P-type semiconductor particles 4-2 and the second N-type semiconductor particles 4-1 are square in cross section, and the square is 1mm by 1mm in size.
Specifically, in the present embodiment, the cross sections of the N-type semiconductor particles and the P-type semiconductor particles have a size of 1mm×1mm, and the cross section refers to a cross section taken in a direction parallel to the first substrate 1 or the second substrate 5.
In an alternative embodiment of the invention, the length of the copper wire 3 is 3mm to 10mm.
Specifically, in this embodiment, the length of the copper wire 3 is 3 mm-10 mm, alternatively, the length of the copper wire 3 is 5mm, 6mm, 7mm or 9mm, and the distance between the hot end and the cold end can be adjusted by adjusting the length of the copper wire 3; the length of the copper wire 3 is more than 10mm, which is unfavorable for the preparation of a semiconductor refrigerator, the length of the copper wire 3 is less than 3mm, and the separation of the hot end and the cold end in space is unfavorable.
It should be noted that in this document relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or apparatus that comprises the element. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The orientation or positional relationship indicated by "upper", "lower", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description and to simplify the description, and is not indicative or implying that the apparatus or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the invention.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (8)
1. A method of manufacturing a semiconductor refrigerator employing flexible interconnections, comprising:
providing a first substrate and a second substrate, wherein the first substrate and the second substrate are oppositely arranged and are arranged at intervals;
etching one side of the first substrate, which is close to the second substrate, to form a first conductive structure, and etching one side of the second substrate, which is close to the first substrate, to form a second conductive structure; wherein the first conductive structure and the second conductive structure are arranged at intervals;
providing first N-type semiconductor particles and first P-type semiconductor particles, printing soldering paste on the side surfaces of the first N-type semiconductor particles and the first P-type semiconductor particles, filling the first N-type semiconductor particles and the first P-type semiconductor particles in a graphite tool, and welding the side surfaces of the first N-type semiconductor particles and the first P-type semiconductor particles, on which the soldering paste is printed, with the first conductive structure by using welding equipment; the first N-type semiconductor particles and the first P-type semiconductor particles welded on the first conductive structure are alternately and alternately arranged at intervals;
providing second N-type semiconductor particles and second P-type semiconductor particles, printing soldering paste on the side surfaces of the second N-type semiconductor particles and the second P-type semiconductor particles, filling the second N-type semiconductor particles and the second P-type semiconductor particles in a graphite tool, and welding the side surfaces of the second N-type semiconductor particles and the second P-type semiconductor particles, on which the soldering paste is printed, with the second conductive structure by using welding equipment; the second N-type semiconductor particles and the second P-type semiconductor particles welded on the second conductive structure are alternately and alternately arranged at intervals, the first N-type semiconductor particles on the first conductive structure are in one-to-one correspondence with the second N-type semiconductor particles on the second conductive structure, and the first P-type semiconductor particles on the first conductive structure are in one-to-one correspondence with the second P-type semiconductor particles on the second conductive structure;
copper wires are welded between the first N-type semiconductor particles and the second N-type semiconductor particles, and copper wires are welded between the first P-type semiconductor particles and the second P-type semiconductor particles.
2. The method of manufacturing a semiconductor refrigerator using flexible interconnection according to claim 1, wherein one first P-type semiconductor particle and one first N-type semiconductor particle are soldered on the same first conductive structure, one second P-type semiconductor particle and one second N-type semiconductor particle are soldered on the same second conductive structure, and the first P-type semiconductor particle, the first N-type semiconductor particle, the second P-type semiconductor particle and the second N-type semiconductor particle are connected in series.
3. The method of manufacturing a semiconductor refrigerator employing flexible interconnection according to claim 1, wherein the graphite tooling comprises a graphite substrate and a graphite cover plate, the graphite substrate comprising positioning through holes and particle loading holes, the graphite cover plate comprising positioning pins and lead through holes; the particle filling holes are used for filling the first N-type semiconductor particles, the first P-type semiconductor particles, the second N-type semiconductor particles and the second P-type semiconductor particles, the positioning bolts are inserted into the positioning through holes and used for assembling the graphite substrate and the graphite cover plate, and the lead through holes are used for providing wiring space for the copper wires.
4. The method of manufacturing a semiconductor refrigerator employing flexible interconnection according to claim 1, wherein the solder paste is tin-silver-copper solder paste.
5. The method for manufacturing a semiconductor refrigerator using flexible interconnection according to claim 1, wherein the copper wire is soldered with the first N-type semiconductor particles, the first P-type semiconductor particles, the second N-type semiconductor particles, and the second P-type semiconductor particles using Pb37Sn 63.
6. The method for manufacturing a semiconductor refrigerator using flexible interconnection according to claim 1, wherein the first substrate and the second substrate are made of a ceramic copper-clad plate.
7. The method of manufacturing a semiconductor refrigerator using flexible interconnection according to claim 1, wherein the first P-type semiconductor particles, the first N-type semiconductor particles, the second P-type semiconductor particles, and the second N-type semiconductor particles have square cross sections, and the square has a size of 1mm x 1mm.
8. The method for manufacturing a semiconductor refrigerator using flexible interconnection according to claim 1, wherein the length of the copper wire is 3mm to 10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310527890.0A CN116583163A (en) | 2023-05-11 | 2023-05-11 | Preparation method of semiconductor refrigerator adopting flexible interconnection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310527890.0A CN116583163A (en) | 2023-05-11 | 2023-05-11 | Preparation method of semiconductor refrigerator adopting flexible interconnection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116583163A true CN116583163A (en) | 2023-08-11 |
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