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CN116462403A - A device and method for preparing a large-diameter core layer preform - Google Patents

A device and method for preparing a large-diameter core layer preform Download PDF

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Publication number
CN116462403A
CN116462403A CN202310330369.8A CN202310330369A CN116462403A CN 116462403 A CN116462403 A CN 116462403A CN 202310330369 A CN202310330369 A CN 202310330369A CN 116462403 A CN116462403 A CN 116462403A
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core
lamp
preset flow
flow rate
communicated
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Inventor
朱志远
李鑫鑫
梁伟
潘权子
向德成
涂峰
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Far East Communications Ltd
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Far East Communications Ltd
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/012Manufacture of preforms for drawing fibres or filaments
    • C03B37/014Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01413Reactant delivery systems
    • C03B37/0142Reactant deposition burners
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/04Multi-nested ports
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/20Specific substances in specified ports, e.g. all gas flows specified
    • C03B2207/26Multiple ports for glass precursor
    • C03B2207/28Multiple ports for glass precursor for different glass precursors, reactants or modifiers
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/60Relationship between burner and deposit, e.g. position
    • C03B2207/64Angle

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)

Abstract

The invention discloses a device and a method for preparing a large-diameter core layer preform, and belongs to the technical field of glass fiber preforms. The device comprises a deposition cavity, a first core lamp, a wrapping lamp and a rotary suspender, wherein a second core lamp is arranged between the wrapping lamps through the first core lamp, so that the density of the outer region of the core layer is improved. The method not only solves the limit of the sintering furnace core tube on the whole size of the loose core rod body. The improved VAD production process of the present invention increases the size of the core portion of the prepared mandrel without increasing or relatively increasing the cladding size. The method not only solves the limit of the sintering furnace core tube on the whole size of the loose core rod body, but also can draw optical fibers with larger length by wrapping the stretched core rod in an OVD or sleeve mode.

Description

一种制备大直径芯层预制棒的装置与方法A device and method for preparing a large-diameter core layer preform

技术领域technical field

本发明涉及玻纤预制棒相关技术领域,具体为一种制备大直径芯层预制棒的装置与方法。The invention relates to the related technical field of glass fiber prefabricated rods, in particular to a device and method for preparing large-diameter core layer prefabricated rods.

背景技术Background technique

随着通信技术的迅速发展,光纤在通信中的使用量日益增多,越来越多的光缆生产企业将产业链延伸到光纤拉丝,并进一步延伸到光纤预制棒的生产。With the rapid development of communication technology, the use of optical fiber in communication is increasing day by day. More and more optical cable manufacturers extend the industrial chain to optical fiber drawing, and further extend to the production of optical fiber preform.

目前光纤预制棒的制造主要采用两步法,即先制造芯棒,然后再在芯棒外沉积包层。芯棒的制造技术主要有四种:美国康宁公司开发的外部气相沉积工艺OVD(OutsideVapor Deposition)、美国贝尔实验室开发的改进的化学气相沉积工艺MCVD(ModifiedChemical VaporDeposition)、日本NTT开发的轴向气相沉积工艺VAD(VaporAxialDeposition)、荷兰飞利浦公司开发的等离子体化学气相沉积工艺PCVD(Plasma ChemicalVaporDeposition)。外包层制造技术主要有:直接外部气相沉积工艺OVD、等离子体外喷涂工艺APVD、套管法。At present, the manufacture of optical fiber preform mainly adopts a two-step method, that is, the core rod is manufactured first, and then the cladding is deposited outside the core rod. There are four main manufacturing technologies for mandrels: the external vapor deposition process OVD (Outside Vapor Deposition) developed by Corning Corporation of the United States, the improved chemical vapor deposition process MCVD (Modified Chemical Vapor Deposition) developed by Bell Laboratories of the United States, the axial vapor deposition process VAD (VaporAxial Deposition) developed by Japan NTT, and the plasma chemical vapor deposition process PCVD (Plasma Chemical Vapor Deposition) developed by Philips of the Netherlands. ition). Outer cladding manufacturing technologies mainly include: direct external vapor deposition process OVD, plasma external spraying process APVD, and casing method.

随着行业竞争的日趋加剧,如何降低光纤预制棒的制造成本成为行业研究的热点。降低光纤预制棒的制造成本主要从以下几个方面着手:①增加预制棒的尺寸;②提高预制棒的合格率,降低报废;③降低原辅材料的成本。本领域内多为一次性制备芯层和包层,MCVD和PCVD工艺由于受衬管尺寸的限制,做大芯棒的尺寸比较困难;VAD和OVD工艺受烧结炉尺寸的限制,芯棒沉积疏松体的尺寸也受到限制,而且芯棒中芯层仅占1/4左右。With the increasing competition in the industry, how to reduce the manufacturing cost of optical fiber preforms has become a hot topic in the industry. Reducing the manufacturing cost of optical fiber preform mainly starts from the following aspects: ① Increase the size of preform; ② Improve the pass rate of preform and reduce scrap; ③ Reduce the cost of raw and auxiliary materials. In this field, the core layer and cladding are mostly prepared at one time. Due to the limitation of the size of the liner in the MCVD and PCVD processes, it is difficult to increase the size of the mandrel; the VAD and OVD processes are limited by the size of the sintering furnace, and the size of the soot deposited on the mandrel is also limited, and the core layer in the mandrel only accounts for about 1/4.

针对上述问题,若能提高所做芯棒的芯包比(d芯层/D包层),即在不增加或者相对少增加包层尺寸的情况下,增大所制备芯棒的芯层部分的尺寸,所制备的芯棒经拉伸后,通过OVD或套管方式进行外包,可拉制更长光纤。因此根据以上设想,本发明提供了一种提升VAD芯棒芯层直径占比的方法。In view of the above problems, if the core-clad ratio (d core layer/D cladding layer) of the core rod can be increased, that is, the size of the core layer part of the core rod can be increased without increasing or relatively little increase in the cladding size. After the core rod is stretched, it can be outsourced by OVD or sleeve, and longer optical fibers can be drawn. Therefore, based on the above ideas, the present invention provides a method for increasing the ratio of the core layer diameter of the VAD mandrel.

发明内容Contents of the invention

为解决现有的技术问题,本发明提供了一种制备大直径芯层预制棒的装置,包括:沉积腔体、第一芯灯、第二芯灯、包灯、旋转吊杆,所述第一芯灯、第二芯灯与包灯设置于所述沉积腔体内部的下方,所述旋转吊杆设置于所述沉积腔体的中部上方,所述旋转吊杆进行轴向转动并沿竖直方向上下移动,所述第一芯灯、第二芯灯与包灯同为环状八层喷孔结构,环状八层喷孔结构由内而外依次包括中心喷孔、第一环形喷孔、第二环形喷孔、第三环形喷孔、第四环形喷孔、第五环形喷孔、第六环形喷孔、第七环形喷孔。In order to solve the existing technical problems, the present invention provides a device for preparing a large-diameter core layer preform, which includes: a deposition chamber, a first core lamp, a second core lamp, a wrapping lamp, and a rotating suspender. The hole structure includes a central nozzle hole, a first annular nozzle hole, a second annular nozzle hole, a third annular nozzle hole, a fourth annular nozzle hole, a fifth annular nozzle hole, a sixth annular nozzle hole and a seventh annular nozzle hole from inside to outside.

优选或可选的,所述装置还包括进风组件和抽风组件,所述进风组件与所述抽风组件均设置于所述沉积腔体的内部;所述进风系统相邻设置于所述芯灯的同侧,所述抽风组件远离芯灯设置。Preferably or optionally, the device further includes an air intake assembly and an exhaust assembly, both of which are disposed inside the deposition chamber; the air intake system is disposed adjacent to the same side of the core lamp, and the exhaust assembly is disposed away from the core lamp.

优选或可选的,所述装置还包括控制系统,所述控制系统用于设置芯灯的气体流量在靶棒末端沉积形成芯层,并控制包灯的气体流量在所述芯层的末端沉积形成包层。Preferably or optionally, the device further includes a control system, which is used to set the gas flow rate of the core lamp to deposit at the end of the target rod to form a core layer, and control the gas flow rate of the clad lamp to deposit at the end of the core layer to form a cladding layer.

优选或可选的,所述第一芯灯中,Preferably or optionally, in the first wick lamp,

中心喷孔通有预设流量为0.15-0.6slpm的SiCl4气体与预设流量为0.1-0.8slpm的H2The central nozzle hole has a preset flow rate of SiCl4 gas of 0.15-0.6slpm and H2 of a preset flow rate of 0.1-0.8slpm;

第一环形喷孔通有预设流量为0.06-0.2slpm的GeCl4与预设流量为3-5.5slpm的H2The first annular nozzle hole has GeCl 4 with a preset flow rate of 0.06-0.2 slpm and H 2 with a preset flow rate of 3-5.5 slpm;

第二环形喷孔通有预设流量为2-5slpm的Ar;The second annular nozzle hole has Ar with a preset flow rate of 2-5 slpm;

第三环形喷孔通有预设流量为17-24slpm的O2The third annular nozzle hole has a preset flow rate of 17-24slpm O 2 ;

第四环形喷孔通有预设流量为2-5slpm的Ar;The fourth annular nozzle hole has Ar with a preset flow rate of 2-5 slpm;

第五环形喷孔通有预设流量为17-24slpm的H2The fifth annular nozzle hole has H 2 with a preset flow rate of 17-24 slpm;

第六环形喷孔通有预设流量为2-6slpm的Ar;The sixth annular nozzle hole has Ar with a preset flow rate of 2-6 slpm;

第七环形喷孔通有预设流量为17-24slpm的O2The seventh annular orifice is vented with O 2 at a preset flow rate of 17-24 slpm.

优选或可选的,所述第二芯灯中,Preferably or optionally, in the second wick lamp,

中心喷孔不通有任何气体;There is any gas in the center nozzle hole;

第一环形喷孔通有预设流量为1.5-5slpm的H2H 2 with a preset flow rate of 1.5-5 slpm is passed through the first annular nozzle hole;

第二环形喷孔通有预设流量为2-5slpm的Ar;The second annular nozzle hole has Ar with a preset flow rate of 2-5 slpm;

第三环形喷孔通有预设流量为5-18slpm的O2The third annular nozzle hole has a preset flow rate of 5-18slpm O 2 ;

第四环形喷孔通有预设流量为2-5slpm的Ar;The fourth annular nozzle hole has Ar with a preset flow rate of 2-5 slpm;

第五环形喷孔通有预设流量为5-18slpm的H2The fifth annular nozzle hole has H 2 with a preset flow rate of 5-18 slpm;

第六环形喷孔通有预设流量为2-6slpm的Ar;The sixth annular nozzle hole has Ar with a preset flow rate of 2-6 slpm;

第七环形喷孔通有预设流量为5-18slpm的O2The seventh annular nozzle hole is vented with O 2 at a preset flow rate of 5-18 slpm.

优选或可选的,所述包灯中,Preferably or optionally, in the package lamp,

中心喷孔通有预设流量为3-7slpm的SiCl4、预设流量为0.8-2.2slpm的O2The central nozzle hole has SiCl 4 with a preset flow rate of 3-7 slpm and O 2 with a preset flow rate of 0.8-2.2 slpm;

第一环形喷孔通有预设流量为9-12slpm的H2与预设流量为0.2-0.6slpm的CF4The first annular nozzle hole has H 2 with a preset flow rate of 9-12 slpm and CF 4 with a preset flow rate of 0.2-0.6 slpm;

第二环形喷孔通有预设流量为2-5slpm的Ar;The second annular nozzle hole has Ar with a preset flow rate of 2-5 slpm;

第三环形喷孔通有预设流量为28-45slpm的O2The third annular nozzle hole has a preset flow rate of 28-45slpm O 2 ;

第四环形喷孔通有预设流量为3-8slpm的Ar;The fourth annular nozzle hole has Ar with a preset flow rate of 3-8 slpm;

第五环形喷孔通有预设流量为90-120slpm的H2The fifth annular nozzle hole has H 2 with a preset flow rate of 90-120 slpm;

第六环形喷孔通有预设流量为3-8slpm的Ar;The sixth annular nozzle hole has Ar with a preset flow rate of 3-8 slpm;

第七环形喷孔通有预设流量为30-55slpm的O2The seventh annular orifice is vented with O 2 at a preset flow rate of 30-55 slpm.

一种制备大直径芯层预制棒的方法,采用上述任一项所述的制备大直径芯层预制棒的装置,包括以下步骤:A method for preparing a large-diameter core layer preform, using the device for preparing a large-diameter core layer preform described in any one of the above, comprising the following steps:

Ⅰ.将清理干净的VAD沉积芯灯、包灯安装在相应的芯灯灯座和包灯灯座上,调节十字激光确定芯灯/包灯安装面,确保安装在芯灯/包灯座上的芯灯/包灯处于同一平面,确保检查芯灯/包灯安装座位置,使其处于基座相对中间位置;Ⅰ. Install the cleaned VAD deposition core lamp and wrap lamp on the corresponding core lamp lamp holder and wrap lamp holder, adjust the cross laser to determine the installation surface of the core lamp/wrap lamp, ensure that the core lamp/wrap lamp installed on the core lamp/wrap lamp holder are in the same plane, and ensure that the position of the wick lamp/wrap lamp mounting seat is in the middle of the base;

Ⅱ.点燃芯灯和包灯,按照流量设定值向靶棒喷射,水解生成的二氧化硅和二氧化锗开始沉积在靶棒上,随着沉积的持续进行,靶棒下端芯层直径逐渐变大,当芯层直径大于预设值时,靶棒随旋转吊杆匀速提升,直到沉积结束,制得芯棒疏松体;Ⅱ. Ignite the core lamp and the bag lamp, and spray to the target rod according to the flow rate setting value. The silicon dioxide and germanium dioxide produced by hydrolysis begin to deposit on the target rod. As the deposition continues, the diameter of the core layer at the lower end of the target rod gradually increases. When the diameter of the core layer is greater than the preset value, the target rod is lifted at a constant speed with the rotating boom until the deposition is completed, and the core rod loose body is obtained;

Ⅲ.将制得的芯棒疏松体经过脱水烧结处理后得到透明芯棒。Ⅲ. Dehydrating and sintering the obtained mandrel loose body to obtain a transparent mandrel.

优选或可选的,所述芯灯的角度为51°±1°,激光距要求为20mm±2mm,轴线距要求为60mm±5mm;所述包灯角度为38°±1°,激光距要求为120mm±5mm,轴线距要求为160mm±10mm。Preferably or optionally, the angle of the core lamp is 51°±1°, the laser distance is required to be 20mm±2mm, and the axial distance is required to be 60mm±5mm; the angle of the wrapping lamp is 38°±1°, the laser distance is required to be 120mm±5mm, and the axial distance is required to be 160mm±10mm.

采用了上述的装置和工艺后,本发明具有如下有益效果:本发明将VAD工艺中芯灯与待制备的疏松体的中轴线偏离一定的角度,使疏松体螺旋式生长,疏松体的提升速率会变慢,但芯棒的芯层尺寸会增加,从而提高单根芯棒的重量及芯包比。同时,为控制芯棒的密度及均匀性,本发明在第一芯灯在包灯之间再设置一个第二芯灯,以提高芯层外部区域的密度。该方法不仅解决了烧结炉芯管对芯棒疏松体整体尺寸的限制。本发明所改进的VAD生产工艺,在不增加或者相对少增加包层尺寸的情况下,增大所制备芯棒的芯层部分的尺寸。该方法不仅解决了烧结炉芯管对芯棒疏松体整体尺寸的限制,同时经拉伸后的芯棒通过OVD或套管方式进行外包,可拉制长度更大的光纤。After adopting the above-mentioned device and process, the present invention has the following beneficial effects: the present invention deviates the central axis of the core lamp and the loose body to be prepared by a certain angle in the VAD process, so that the loose body grows in a spiral manner, and the lifting rate of the loose body will slow down, but the core layer size of the mandrel will increase, thereby increasing the weight of a single mandrel and the core-to-pack ratio. Simultaneously, in order to control the density and uniformity of the mandrel, the present invention further arranges a second core lamp between the first core lamp and the envelope lamp, so as to increase the density of the outer area of the core layer. The method not only solves the limitation of the sintering furnace core tube on the overall size of the mandrel loose body. The improved VAD production process of the present invention increases the size of the core layer part of the prepared mandrel without increasing or relatively little increasing the cladding layer size. This method not only solves the limitation of the overall size of the mandrel loose body by the sintering furnace core tube, but also outsources the stretched mandrel by OVD or sleeve, which can draw a longer optical fiber.

附图说明Description of drawings

以下结合附图和具体的实施方式来对本发明进行详细阐述:The present invention is described in detail below in conjunction with accompanying drawing and specific embodiment:

图1为本发明实施例2的装置结构示意图;Fig. 1 is the schematic diagram of the device structure of embodiment 2 of the present invention;

图2为本发明实施例的芯层沉积状态示意图;Fig. 2 is a schematic diagram of the deposition state of the core layer according to an embodiment of the present invention;

附图标记为沉积腔体1、第一芯灯2、第二芯灯3、包灯4、旋转吊杆5、靶棒6。Reference numerals are a deposition chamber 1 , a first core lamp 2 , a second core lamp 3 , a package lamp 4 , a rotating boom 5 , and a target rod 6 .

具体实施方式Detailed ways

在下文的描述中,给出了大量具体的细节以便提供对本发明更为彻底的理解。然而,对于本领域技术人员而言显而易见的是,本发明可以无需一个或多个这些细节而得以实施。在其他的例子中,为了避免与本发明发生混淆,对于本领域公知的一些技术特征未进行描述。In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

在本发明的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。In the description of the present invention, it should be noted that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and should not be construed as indicating or implying relative importance.

下面结合实施例,对本发明作进一步说明,所述的实施例的示例旨在解释本发明,而不能理解为对本发明的限制。实施例中未注明具体技术和反应条件者,可按照本领域内的文献所描述的技术或条件或产品说明书进行。凡未注明厂商的试剂、仪器或设备,均可通过市售获得。The present invention will be further described below in conjunction with the embodiments, and the examples of the described embodiments are intended to explain the present invention, but should not be construed as limiting the present invention. Those that do not indicate specific techniques and reaction conditions in the examples can be carried out according to techniques or conditions described in documents in this field or product instructions. All reagents, instruments or equipment not indicated by the manufacturer can be obtained commercially.

本发明提供了一种制备大直径芯层预制棒的装置与方法,将VAD工艺中芯灯与待制备的疏松体的中轴线偏离一定的角度,使疏松体螺旋式生长,疏松体的提升速率会变慢,但芯棒的芯层尺寸会增加,从而提高单根芯棒的重量及芯包比。同时,为控制芯棒的密度及均匀性,在芯灯在包灯之间再设置一个第二芯灯,以提高芯层外部区域的密度,解决了烧结炉芯管对芯棒疏松体整体尺寸的限制。本发明所改进的生产工艺,在不增加或者相对少增加包层尺寸的情况下,增大所制备芯棒的芯层部分的尺寸。不仅解决了烧结炉芯管对芯棒疏松体整体尺寸的限制,同时经拉伸后的芯棒通过OVD或套管方式进行外包,可拉制长度更大的光纤。The invention provides a device and method for preparing a large-diameter core layer prefabricated rod. The core lamp in the VAD process is deviated from the central axis of the soot body to be prepared by a certain angle, so that the soot body grows in a spiral manner, and the lifting rate of the soot body will be slowed down, but the core layer size of the mandrel will increase, thereby increasing the weight of a single mandrel rod and the core-to-package ratio. At the same time, in order to control the density and uniformity of the core rod, a second core lamp is installed between the core lamp and the wrapping lamp to increase the density of the outer area of the core layer and solve the limitation of the overall size of the core rod loose body by the sintering furnace core tube. The improved production process of the present invention increases the size of the core layer part of the prepared mandrel without increasing or relatively little increasing the size of the cladding layer. It not only solves the limitation of the overall size of the core rod loose body by the sintering furnace core tube, but also outsources the stretched core rod through OVD or sleeve, which can draw longer optical fibers.

制备大直径芯层预制棒的方法,包括以下步骤:将清理干净的芯灯、包灯安装在相应的芯灯灯座和包灯灯座后,在旋转吊杆上安装靶棒并置于沉积腔体内,使靶棒旋转,将H2和SiCl4通入芯灯的中心喷孔,H2和GeCl4通入芯灯的第一环形喷孔,隔离气体Ar通入芯灯的第二、第四和第六环形喷孔,助燃气体O2通入芯灯的第三和第七环形喷孔,助燃气体H2通入芯灯的第五喷嘴,并在沉积容腔内点燃产生火焰,气相原料SiCl4、GeCl4、O2在火焰中反应产生SiO2、GeO2粉尘,SiO2、GeO2粉尘沉积于靶棒的末端,形成芯层;将H2和SiCl4通入包灯的第一喷嘴,燃烧气体H2通入包灯的第二喷嘴,隔离气体Ar通入包灯的第三、第五和第七喷嘴,助燃气体O2通入包灯的第四和第八喷嘴,助燃气体H2通入包灯的第六喷嘴,并在沉积容腔内点燃产生火焰,气相原料SiCl4、O2在火焰中反应产生SiO2粉尘,SiO2粉尘附着在芯层外周,形成光学包层;在旋转吊杆的升降带动下靶棒逐渐上升,沉积面始终保持在靶棒的末端,使得粉尘在靶棒末端连续沉积形成芯棒的松散体,当松散体达到设定长度时,关闭芯灯,包灯继续往下沉积直到将芯层全部包完为止。The method for preparing a large-diameter core layer prefabricated rod includes the following steps: After installing the cleaned core lamp and the wrapped lamp on the corresponding core lamp lamp holder and the wrapped lamp lamp holder, install the target rod on the rotating suspender and place it in the deposition chamber, rotate the target rod, and place the H2and SiCl4into the central orifice of the wick lamp, H2and GeCl4It passes into the first annular nozzle hole of the core lamp, the isolation gas Ar passes into the second, fourth and sixth annular nozzle holes of the core lamp, and the combustion-supporting gas O2The third and seventh annular nozzle holes leading to the wick lamp, the combustion-supporting gas H2Pass into the fifth nozzle of the core lamp, and ignite in the deposition chamber to generate a flame, and the gas phase raw material SiCl4、GeCl4, O2Reacts in a flame to produce SiO2、GeO2Dust, SiO2、GeO2The dust is deposited on the end of the target rod to form a core layer; the H2and SiCl4Into the first nozzle of the package lamp, the combustion gas H2Pass into the second nozzle of the package lamp, the isolation gas Ar passes into the third, fifth and seventh nozzles of the package lamp, and the combustion-supporting gas O2Into the fourth and eighth nozzles of the bag lamp, combustion-supporting gas H2Pass into the sixth nozzle of the package lamp, and ignite in the deposition chamber to generate a flame, and the gas phase raw material SiCl4, O2Reacts in a flame to produce SiO2Dust, SiO2Dust adheres to the outer periphery of the core layer to form an optical cladding; driven by the lifting of the rotating boom, the target rod rises gradually, and the deposition surface is always kept at the end of the target rod, so that the dust is continuously deposited at the end of the target rod to form a loose body of the mandrel.

实施例1Example 1

本实施例为常规的VAD法制备工艺,将清理干净的芯灯、包灯安装在相应的芯灯灯座和包灯灯座后,在旋转吊杆上安装靶棒并置于沉积腔体内,使靶棒旋转,将H2和SiCl4通入芯灯的中心喷孔,H2和GeCl4通入芯灯的第一环形喷孔,隔离气体Ar通入芯灯的第二、第四和第六环形喷孔,助燃气体O2通入芯灯的第三和第七环形喷孔,助燃气体H2通入芯灯的第五喷嘴,并在沉积容腔内点燃产生火焰。This embodiment is a conventional VAD method preparation process. After installing the cleaned core lamp and wrapped lamp on the corresponding core lamp lamp holder and wrapped lamp holder, install the target rod on the rotating boom and place it in the deposition chamber, rotate the target rod, pass H2 and SiCl4 into the central nozzle hole of the core lamp, H2 and GeCl4 into the first annular nozzle hole of the core lamp, the insulating gas Ar into the second, fourth and sixth annular nozzle holes of the core lamp, and the combustion-supporting gas O2 into the third and seventh nozzle holes of the core lamp In the annular nozzle hole, the combustion-supporting gas H 2 passes into the fifth nozzle of the core lamp, and is ignited in the deposition chamber to generate a flame.

其中,芯灯中心喷孔通有预设流量为0.25slpm的SiCl4气体与预设流量为0.3slpm的H2气体;第一环形喷孔通有预设流量为0.12slpm的GeCl4与预设流量为4.4slpm的H2气体,第二环形喷孔通有预设流量为3slpm的Ar气体,第三环形喷孔通有预设流量为18slpm的O2气体,第四环形喷孔通有预设流量为4slpm的Ar气体,第五环形喷孔通有预设流量为19slpm的H2气体,第六环形喷孔通有预设流量为4slpm的Ar气体,第七环形喷孔通有预设流量为20slpm的O2气体。Among them, SiCl4 gas with a preset flow rate of 0.25 slpm and H2 gas with a preset flow rate of 0.3 slpm are passed through the center nozzle hole of the wick lamp.2Gas; the first annular orifice has GeCl4 with a preset flow rate of 0.12 slpm and H with a preset flow rate of 4.4 slpm2Gas, Ar gas with a preset flow rate of 3 slpm is passed through the second annular nozzle hole, and O gas with a preset flow rate of 18 slpm is passed through the third annular nozzle hole2Gas, Ar gas with a preset flow rate of 4 slpm is passed through the fourth annular nozzle hole, and H gas with a preset flow rate of 19 slpm is passed through the fifth annular nozzle hole2Gas, Ar gas with a preset flow rate of 4 slpm is passed through the sixth annular nozzle hole, and O gas with a preset flow rate of 20 slpm is passed through the seventh annular nozzle hole.2gas.

包灯自内而外各喷孔所通气体及流量设置为:中心喷孔通有预设流量为6slpm的SiCl4气体与预设流量为1.8slpm的O2气体,第一环形喷孔通有预设流量为10.8slpm的H2气体与预设流量为0.44slpm的CF4气体,第二环形喷孔通有预设流量为4slpm的Ar气体,第三环形喷孔通有预设流量为35slpm的O2气体,第四环形喷孔通有预设流量为6slpm的Ar气体,第五环形喷孔通有预设流量为100slpm的H2气体,第六环形喷孔通有预设流量为6slpm的Ar气体,第七环形喷孔通有预设流量为45slpm的O2气体。The gas and flow rate of each nozzle hole of the package lamp from the inside to the outside are set as follows: the center nozzle hole has SiCl4 gas with a preset flow rate of 6 slpm and O gas with a preset flow rate of 1.8 slpm2Gas, the first annular nozzle hole has a preset flow rate of 10.8slpm H2Gas with CF at preset flow rate of 0.44slpm4Gas, Ar gas with a preset flow rate of 4 slpm is passed through the second annular nozzle hole, and O gas with a preset flow rate of 35 slpm is passed through the third annular nozzle hole2Gas, Ar gas with a preset flow rate of 6 slpm is passed through the fourth annular nozzle hole, and H gas with a preset flow rate of 100 slpm is passed through the fifth annular nozzle hole2Gas, Ar gas with a preset flow rate of 6 slpm is passed through the sixth annular nozzle hole, and O gas with a preset flow rate of 45 slpm is passed through the seventh annular nozzle hole.2gas.

疏松体的提升速度为1.2mm/min。The lifting speed of the loose body is 1.2mm/min.

通过上述方法,对制得的芯棒疏松体经过脱水烧结处理后,即得到本实施例的透明芯棒。The transparent mandrel of this embodiment is obtained after dehydration and sintering of the mandrel loose body obtained by the above method.

实施例2Example 2

与实施例1相比,本实施例主要改动处为增设了第二芯灯3,并调整芯第一芯灯2的Y轴坐标,向Y轴正方向移动约0.6mm。因将第一芯灯2的Y轴位置向正方向移动,现料焰喷射位置偏移疏松体中轴线,故现疏松体芯层呈螺旋式生长,与实施例1原料的流量相同,但是因芯层螺旋式生长,现有的芯层与实施例1中的芯层直径相比要大,芯层的相对密度要小很多,芯层与包层密度不匹配,会导致后续的烧结工序烧结出的芯棒出现芯层或者芯包间白色未烧透,影响产品的正常生产。因此本实施例在第一芯灯2与包灯之间增设有第二芯灯3,改进后的装置结构示意图如附图1所示。装置包括沉积腔体1、第一芯灯2、第二芯灯3、包灯4、旋转吊杆5、靶棒6、进风组件7和抽风组件8。第一芯灯2、第二芯灯3与包灯4设置于沉积腔体1内部的下方,旋转吊杆5设置于沉积腔体1的中部上方,旋转吊杆5进行轴向转动并沿竖直方向上下移动;靶棒6固定连接于旋转吊杆5的下底端;进风组件7与抽风组件8均设置于沉积腔体1的内部;进风系统7相邻设置于第一芯灯2与第二芯灯3的同侧,抽风组件8远离第一芯灯2与第二芯灯3设置。第一芯灯2、第二芯灯3与包灯4同为环状八层喷孔结构,其中第一芯灯2各环形喷孔流量配比如下:中心喷孔通有预设流量为0.25slpm的SiCl4气体与预设流量为0.3slpm的H2气体;第一环形喷孔通有预设流量为0.13slpm的GeCl4与预设流量为4.4slpm的H2气体,第二环形喷孔通有预设流量为3slpm的Ar气体,第三环形喷孔通有预设流量为18slpm的O2气体,第四环形喷孔通有预设流量为4slpm的Ar气体,第五环形喷孔通有预设流量为19slpm的H2气体,第六环形喷孔通有预设流量为4slpm的Ar气体,第七环形喷孔通有预设流量为20slpm的O2气体。Compared with Embodiment 1, the main changes of this embodiment are that the second core lamp 3 is added, and the Y-axis coordinate of the first core lamp 2 is adjusted to move about 0.6mm in the positive direction of the Y-axis. Because the Y-axis position of the first core lamp 2 is moved to the positive direction, the position of the current flame injection position deviates from the central axis of the soot body, so the core layer of the soot body grows spirally, which is the same as the flow rate of the raw material in Example 1. However, due to the spiral growth of the core layer, the diameter of the existing core layer is larger than that of the core layer in Example 1, and the relative density of the core layer is much smaller. The mismatch between the density of the core layer and the cladding layer will cause the core rod sintered in the subsequent sintering process. . Therefore, in this embodiment, a second core lamp 3 is added between the first core lamp 2 and the wrapping lamp, and the structure schematic diagram of the improved device is shown in Fig. 1 . The device includes a deposition chamber 1 , a first core lamp 2 , a second core lamp 3 , a cover lamp 4 , a rotating boom 5 , a target rod 6 , an air inlet assembly 7 and an exhaust assembly 8 . The first core lamp 2, the second core lamp 3 and the bag lamp 4 are arranged below the inside of the deposition chamber 1, and the rotating boom 5 is arranged above the middle part of the deposition chamber 1. The rotating boom 5 rotates axially and moves up and down in the vertical direction; the target rod 6 is fixedly connected to the lower end of the rotating boom 5; the air inlet assembly 7 and the exhaust assembly 8 are all arranged inside the deposition chamber 1; .第一芯灯2、第二芯灯3与包灯4同为环状八层喷孔结构,其中第一芯灯2各环形喷孔流量配比如下:中心喷孔通有预设流量为0.25slpm的SiCl 4气体与预设流量为0.3slpm的H 2气体;第一环形喷孔通有预设流量为0.13slpm的GeCl4与预设流量为4.4slpm的H 2气体,第二环形喷孔通有预设流量为3slpm的Ar气体,第三环形喷孔通有预设流量为18slpm的O 2气体,第四环形喷孔通有预设流量为4slpm的Ar气体,第五环形喷孔通有预设流量为19slpm的H 2气体,第六环形喷孔通有预设流量为4slpm的Ar气体,第七环形喷孔通有预设流量为20slpm的O 2气体。

第二芯灯3要求角度为42°±0.5°,第二芯灯3中心喷孔不通有任何气体,第一环形喷孔通有预设流量为2.1slpm的H2气体,第二环形喷孔通有预设流量为3slpm的Ar气体,第三环形喷孔通有预设流量为8slpm的O2气体,第四环形喷孔通有预设流量为4slpm的Ar气体,第五环形喷孔通有预设流量为9slpm的H2气体,第六环形喷孔通有预设流量为4slpm的Ar气体,第七环形喷孔通有预设流量为10slpm的O2气体。第二芯灯3作用为提高疏松体芯层以及芯包间的密度,防止芯层与包层密度的不匹配导致烧结后出现的芯层或芯包间白色未烧透的情况。第二芯灯3要求角度为42°±0.5°,第二芯灯3中心喷孔不通有任何气体,第一环形喷孔通有预设流量为2.1slpm的H 2气体,第二环形喷孔通有预设流量为3slpm的Ar气体,第三环形喷孔通有预设流量为8slpm的O 2气体,第四环形喷孔通有预设流量为4slpm的Ar气体,第五环形喷孔通有预设流量为9slpm的H 2气体,第六环形喷孔通有预设流量为4slpm的Ar气体,第七环形喷孔通有预设流量为10slpm的O 2气体。 The function of the second core lamp 3 is to increase the density between the core layer and the core package of the loose body, and prevent the mismatch between the density of the core layer and the cladding layer from causing the white unburned condition of the core layer or the core package after sintering.

包灯4自内而外各喷孔所通气体及流量设置为:中心喷孔通有预设流量为6.5slpm的SiCl4气体与预设流量为2slpm的O2气体,第一环形喷孔通有预设流量为11slpm的H2气体与预设流量为0.48slpm的CF4气体,第二环形喷孔通有预设流量为4slpm的Ar气体,第三环形喷孔通有预设流量为35slpm的O2气体,第四环形喷孔通有预设流量为6slpm的Ar气体,第五环形喷孔通有预设流量为104slpm的H2气体,第六环形喷孔通有预设流量为6slpm的Ar气体,第七环形喷孔通有预设流量为45slpm的O2气体。The gas and flow rate of the package lamp 4 from the inside to the outside of each nozzle hole are set as follows: the center nozzle hole has SiCl4 gas with a preset flow rate of 6.5 slpm and O gas with a preset flow rate of 2 slpm.2Gas, the first annular nozzle hole has a preset flow rate of 11slpm H2Gas with CF at preset flow rate of 0.48slpm4Gas, Ar gas with a preset flow rate of 4 slpm is passed through the second annular nozzle hole, and O gas with a preset flow rate of 35 slpm is passed through the third annular nozzle hole2Gas, Ar gas with a preset flow rate of 6 slpm is passed through the fourth annular nozzle hole, and H gas with a preset flow rate of 104 slpm is passed through the fifth annular nozzle hole2Gas, Ar gas with a preset flow rate of 6 slpm is passed through the sixth annular nozzle hole, and O gas with a preset flow rate of 45 slpm is passed through the seventh annular nozzle hole.2gas.

疏松体的提升速度为1.1mm/min。The lifting speed of the loose body is 1.1mm/min.

通过上述方法,对制得的芯棒疏松体经过脱水烧结处理后,即得到本实施例的透明芯棒。The transparent mandrel of this embodiment is obtained after dehydration and sintering of the mandrel loose body obtained by the above method.

结果与测试Results and Tests

对实施例制得的透明芯棒进行光学测试,测得的参数如下表所示:The optical test is carried out to the transparent mandrel that embodiment makes, and the measured parameter is shown in the following table:

芯层直径/mmCore diameter/mm 包层直径/mmCladding diameter/mm 包芯比Core-to-core ratio 相对折射率relative refractive index 包层折射率Cladding index 16.9316.93 86.3486.34 5.105.10 0.3720.372 -0.00041-0.00041 1919 95.1995.19 5.005.00 0.3690.369 -0.00042-0.00042

将上表所得参数与附图2的芯层沉积状态示意图结合,不难看出,实施例2制得的透明芯棒,其芯层直径高于实施例1,同时其包芯比、相对折射率与包层折射率与实施例1相比,均未有明显的差异,这表明实施例2在保证光学参数稳定的前提下,提升了芯层的直径。实施例2通过调整第一芯灯、第二芯灯的相对位置以及各喷灯的气体流量配比,在保证芯棒剖面结构不变的情况下,既保证了沉积疏松体的密度分布均匀性,保证烧结芯棒的透明度,又在相对少增加包层尺寸的情况下,增大所制备芯棒的芯层部分的尺寸。该方法不仅解决了烧结炉芯管对芯棒疏松体整体尺寸的限制,同时经拉伸后的芯棒通过OVD或套管方式进行外包,可拉制得到更长的光纤。另外需要说明的是,在上述具体实施方式中所描述的各个具体技术特征,在不矛盾的情况下,可以通过任何合适的方式进行组合。为了避免不必要的重复,本发明对各种可能的组合方式不再另行说明。Combining the parameters obtained in the above table with the schematic diagram of the deposition state of the core layer in Figure 2, it is not difficult to see that the diameter of the core layer of the transparent mandrel prepared in Example 2 is higher than that of Example 1. At the same time, there is no obvious difference in the core-clad ratio, relative refractive index and cladding refractive index compared with Example 1. This shows that Example 2 increases the diameter of the core layer under the premise of ensuring stable optical parameters. In Example 2, by adjusting the relative positions of the first core lamp and the second core lamp and the gas flow ratio of each blowtorch, under the condition that the cross-sectional structure of the core rod remains unchanged, the uniformity of the density distribution of the deposited loose body and the transparency of the sintered core rod are ensured, and the size of the core layer of the prepared core rod is increased with a relatively small increase in the size of the cladding layer. This method not only solves the limitation of the overall size of the core rod loose body by the sintering furnace core tube, but also outsources the stretched core rod through OVD or a sleeve, so that a longer optical fiber can be drawn. In addition, it should be noted that the various specific technical features described in the above specific implementation manners may be combined in any suitable manner if there is no contradiction. In order to avoid unnecessary repetition, various possible combinations are not further described in the present invention.

Claims (9)

1. An apparatus for preparing a large diameter core preform, comprising: the deposition chamber, first core lamp, second core lamp, package lamp, rotatory jib, its characterized in that, first core lamp, second core lamp and package lamp set up in the inside below of deposition chamber, rotatory jib set up in the middle part top of deposition chamber, rotatory jib carries out axial rotation and reciprocates along vertical direction, first core lamp, second core lamp and package lamp are annular eight-layer orifice structure together, and annular eight-layer orifice structure includes central orifice, first annular orifice, second annular orifice, third annular orifice, fourth annular orifice, fifth annular orifice, sixth annular orifice, seventh annular orifice from inside to outside in proper order.
2. The apparatus for preparing a large diameter core preform according to claim 1, further comprising a target rod, an air intake assembly and an air extraction assembly; the target rod is fixedly connected to the lower bottom end of the rotary suspender; the air inlet assembly and the air draft assembly are arranged in the deposition cavity; the air inlet system is adjacently arranged on the same side of the first core lamp and the second core lamp, and the air draft assembly is far away from the first core lamp and the second core lamp.
3. The apparatus for preparing a large diameter core preform according to claim 1, further comprising a control system for setting a gas flow rate of the core lamp to deposit at an end of the target rod to form a core, and controlling a gas flow rate of the clad lamp to deposit at an end of the core to form a clad.
4. The apparatus for preparing a large diameter core preform according to claim 1, wherein the first core lamp has a central nozzle hole through which SiCl with a preset flow rate of 0.15 to 0.6slpm is introduced 4 H with gas and preset flow rate of 0.1-0.8slpm 2
The first annular spray hole is communicated with GeCl with preset flow of 0.06-0.2slpm 4 H with preset flow rate of 3-5.5slpm 2
Ar with the preset flow rate of 2-5slpm is communicated with the second annular spray hole;
the third annular spray orifice is communicated with O with preset flow of 17-24slpm 2
Ar with the preset flow rate of 2-5slpm is communicated with the fourth annular spray hole;
the fifth annular spray hole is communicated with H with preset flow of 17-24slpm 2
Ar with the preset flow rate of 2-6slpm is communicated with the sixth annular spray hole;
the seventh annular spray hole is communicated with O with preset flow of 17-24slpm 2
5. The apparatus for manufacturing a large diameter core preform according to claim 1, wherein, in the second core lamp,
any gas is not introduced into the central spray hole;
the first annular spray hole is communicated with H with preset flow of 1.5-5slpm 2
Ar with the preset flow rate of 2-5slpm is communicated with the second annular spray hole;
the third annular spray hole is communicated with a preset flowO of 5-18slpm 2
Ar with the preset flow rate of 2-5slpm is communicated with the fourth annular spray hole;
the fifth annular spray hole is communicated with H with preset flow of 5-18slpm 2
Ar with the preset flow rate of 2-6slpm is communicated with the sixth annular spray hole;
the seventh annular spray hole is communicated with O with preset flow of 5-18slpm 2
6. The apparatus for preparing a large diameter core preform according to claim 1, wherein, in the clad lamp,
SiCl with preset flow of 3-7slpm is communicated with the central spray hole 4 O with preset flow rate of 0.8-2.2slpm 2
The first annular spray hole is communicated with H with the preset flow of 9-12slpm 2 CF with preset flow rate of 0.2-0.6slpm 4
Ar with the preset flow rate of 2-5slpm is communicated with the second annular spray hole;
the third annular spray orifice is communicated with O with preset flow of 28-45slpm 2
Ar with the preset flow rate of 3-8slpm is communicated with the fourth annular spray hole;
the fifth annular spray hole is communicated with H with preset flow of 90-120slpm 2
Ar with the preset flow rate of 3-8slpm is communicated with the sixth annular spray hole;
the seventh annular spray hole is communicated with O with preset flow of 30-55slpm 2
7. A method of producing a large diameter core preform using the apparatus for producing a large diameter core preform according to any one of claims 1 to 6, comprising the steps of:
the cleaned first core lamp, the cleaned second core lamp and the cleaned package lamp are arranged on a corresponding core lamp holder and a corresponding package lamp holder, cross laser is adjusted to determine mounting surfaces of the first core lamp, the second core lamp and the package lamp, the first core lamp, the second core lamp and the package lamp which are arranged on the first core lamp, the second core lamp and the package lamp are ensured to be positioned on the same plane, and the lamp holder position is ensured to be positioned in the middle position relative to the base;
igniting the core lamp and the cladding lamp, spraying the target rod according to a flow set value, starting to deposit silicon dioxide and germanium dioxide generated by hydrolysis on the target rod, gradually increasing the diameter of a core layer at the lower end of the target rod along with the continuous progress of the deposition, and lifting the target rod along with a rotary suspender at a constant speed until the deposition is finished when the diameter of the core layer is larger than a preset value, so as to prepare a core rod loosening body;
and III, dehydrating and sintering the prepared loose core rod body to obtain the transparent core rod.
8. The method of manufacturing a large diameter core preform according to claim 7, wherein the angle of the first core lamp is 51 ° ± 1 °, the laser distance is required to be 20mm ± 2mm, and the axis distance is required to be 60mm ± 5mm; the angle of the bulb lamp is 38 degrees+/-1 degrees, the laser distance is required to be 120 mm+/-5 mm, and the axis distance is required to be 160 mm+/-10 mm.
9. The method of manufacturing a large diameter core preform according to claim 7, wherein the angle of the second core lamp is 42 ° ± 0.5 °, the laser pitch requirement is 60mm ± 5mm, and the axis pitch requirement is 90mm ± 5mm.
CN202310330369.8A 2023-03-31 2023-03-31 A device and method for preparing a large-diameter core layer preform Pending CN116462403A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0710580A (en) * 1993-06-25 1995-01-13 Mitsubishi Cable Ind Ltd Production of optical fiber preform
CN107540206A (en) * 2017-10-13 2018-01-05 长飞光纤光缆股份有限公司 VAD prepares the device and method of preform mother metal
CN114136242A (en) * 2021-12-01 2022-03-04 南通大学 Eccentricity measuring device for optical fiber perform
CN114349327A (en) * 2022-01-18 2022-04-15 江苏亨通光导新材料有限公司 Low-cost processing technology of bending insensitive single-mode optical fiber
CN115784600A (en) * 2022-09-30 2023-03-14 杭州金星通光纤科技有限公司 Porous optical fiber preform deposition device and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0710580A (en) * 1993-06-25 1995-01-13 Mitsubishi Cable Ind Ltd Production of optical fiber preform
CN107540206A (en) * 2017-10-13 2018-01-05 长飞光纤光缆股份有限公司 VAD prepares the device and method of preform mother metal
CN114136242A (en) * 2021-12-01 2022-03-04 南通大学 Eccentricity measuring device for optical fiber perform
CN114349327A (en) * 2022-01-18 2022-04-15 江苏亨通光导新材料有限公司 Low-cost processing technology of bending insensitive single-mode optical fiber
CN115784600A (en) * 2022-09-30 2023-03-14 杭州金星通光纤科技有限公司 Porous optical fiber preform deposition device and method

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