CN114349327A - Low-cost processing technology of bending insensitive single-mode optical fiber - Google Patents
Low-cost processing technology of bending insensitive single-mode optical fiber Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及弯曲不敏感单模光纤的生产领域,具体为一种弯曲不敏感单模光纤的低成本加工工艺。The invention relates to the production field of bending-insensitive single-mode optical fibers, in particular to a low-cost processing technology for bending-insensitive single-mode optical fibers.
背景技术Background technique
弯曲不敏感单模光纤与普通G.652单模光纤相比,具有在极小的弯曲半径下附加损耗小的特性。在FTTH技术的应用中,常会出现5mm~15mm的弯曲半径,实际复杂的铺设环境对光纤的弯曲性能有着更高的需求。常规方案的弯曲损耗不敏感单模光纤采用增加芯层中锗元素(Ge)含量,以提高芯层折射率,同时在内包层中掺杂氟(F),以降低内包层折射率。Compared with ordinary G.652 single-mode fiber, bend-insensitive single-mode fiber has the characteristics of small additional loss under extremely small bending radius. In the application of FTTH technology, a bending radius of 5mm to 15mm often occurs, and the actual complex laying environment has higher requirements on the bending performance of the optical fiber. The bending loss-insensitive single-mode fiber of the conventional scheme adopts increasing the content of germanium (Ge) in the core layer to increase the refractive index of the core layer, and at the same time doping fluorine (F) in the inner cladding layer to reduce the refractive index of the inner cladding layer.
如公告号为CN102730961B的中国发明专利公开了一种在沉积中在芯层掺锗元素(Ge)、烧结过程中通入四氟化碳(CF4)增加内包下陷深度的方法,该方法芯棒制备工艺流程长,但在烧结中通入CF4会降低烧结炉使用寿命,增加制造成本;又如公开号CN112904474A的中国发明专利申请公开了一种PCVD/VAD+套衬管熔缩+OVD方案,该方案易于获得稳定的折射率剖面,但是其芯棒制造工艺复杂,芯棒外面熔缩掺F管,掺F管制备材料利用率低,造成其成本高昂,不利于企业降低制造成本;因此,现有弯曲不敏感单模光纤加工工艺普遍存在工艺复杂、制造成本高的问题。For example, the Chinese invention patent with the publication number CN102730961B discloses a method of doping germanium element (Ge) in the core layer during deposition, and introducing carbon tetrafluoride (CF 4 ) during the sintering process to increase the subsidence depth of the inner cladding. The preparation process is long, but introducing CF 4 during sintering will reduce the service life of the sintering furnace and increase the manufacturing cost; another example is the Chinese invention patent application with publication number CN112904474A which discloses a PCVD/VAD+ liner shrinkage+OVD scheme, This solution is easy to obtain a stable refractive index profile, but the manufacturing process of the mandrel is complicated, and the F-doped tube is shrunk on the outside of the mandrel. The existing bending-insensitive single-mode optical fiber processing technology generally has the problems of complicated process and high manufacturing cost.
发明内容SUMMARY OF THE INVENTION
针对上述问题,本发明提供了一种弯曲不敏感单模光纤的低成本加工工艺,其能解决现有方法存在的工艺复杂、制造成本高的问题。In view of the above problems, the present invention provides a low-cost processing technology for a bend-insensitive single-mode optical fiber, which can solve the problems of complicated process and high manufacturing cost existing in the existing method.
一种弯曲不敏感单模光纤的低成本加工工艺,其先制备光纤预制棒、再对所述光纤预制棒进行拉丝处理即得到弯曲不敏感光纤;所述弯曲不敏感单模光纤包括中心的芯层、围绕并与所述芯层接触的包层,所述包层自内而外包括内包层和外包层;其特征在于:A low-cost processing technology for a bend-insensitive single-mode optical fiber, wherein an optical fiber preform is prepared first, and then the optical fiber preform is drawn to obtain a bend-insensitive optical fiber; the bend-insensitive single-mode optical fiber includes a central core layer, a cladding surrounding and in contact with the core layer, the cladding including an inner cladding and an outer cladding from the inside out; it is characterized in that:
所述内包层至少包括两层且至少两层内包层自内而外形成至少一个类阶梯式的凹陷结构;The inner cladding layer includes at least two layers, and the at least two inner cladding layers form at least one stepped-like recessed structure from the inside to the outside;
所述光纤预制棒的制备包括:步骤(1),应用VAD工艺通过沉积设备沉积得到由所述芯层和内包层形成的芯棒松散体;步骤(2),将所述芯棒松散体依次经过烧结脱水处理、拉伸处理后得到透明玻璃芯棒;步骤(3),应用OVD工艺在所述芯棒外表面沉积形成所述外包层,最后经过烧结得到所述光纤预制棒;The preparation of the optical fiber preform includes: step (1), applying a VAD process to deposit a core rod loose body formed by the core layer and the inner cladding layer by deposition equipment; step (2), sequentially depositing the core rod loose body After sintering and dehydration treatment and stretching treatment, a transparent glass core rod is obtained; in step (3), the outer cladding is formed by depositing the outer surface of the core rod with an OVD process, and finally the optical fiber preform is obtained by sintering;
所述步骤(1)中,所述沉积设备包括腔体、以及设置于所述腔体内的芯层喷灯、内包层喷灯,所述内包层喷灯至少设有两个且每一个所述内包层喷灯分别与一内包层一一对应,所述芯层喷灯、内包层喷灯均为环状多层喷孔结构;初始靶棒从顶部伸入到所述腔体内并由控制系统控制其以设定的速度旋转并向上提升,所述控制系统控制所述芯层喷灯先以预设的沉积气体流量在所述初始靶棒的末端沉积形成所述芯层,所述控制系统根据光纤内包层折射率剖面结构自内而外依次控制每一所述内包层喷灯以预设的每一内包层气体流量在所述芯层的末端沉积形成每一层所述内包层。In the step (1), the deposition equipment includes a cavity, and a core layer torch and an inner cladding torch disposed in the cavity, the inner cladding torches are provided with at least two and each of the inner cladding torches is provided. One-to-one correspondence with an inner cladding layer, the core layer burner and the inner cladding burner are both annular multi-layer nozzle structures; the initial target rod extends into the cavity from the top and is controlled by the control system to set the desired value. The speed is rotated and raised upward, the control system controls the core layer burner to deposit the core layer at the end of the initial target rod at a preset deposition gas flow rate, and the control system is based on the refractive index profile of the inner cladding of the optical fiber The structure sequentially controls each of the inner cladding torches to deposit and form each layer of the inner cladding layer at the end of the core layer at a preset gas flow rate of each inner cladding layer from the inside out.
进一步的,所述沉积设备还包括进风系统和抽风系统,所述腔体的一侧设置有所述进风系统、相对的另一侧设置有所述抽风系统。Further, the deposition equipment further includes an air intake system and an air extraction system, the air intake system is provided on one side of the cavity, and the air extraction system is provided on the opposite side.
进一步的,所述内包层包括自内而外的第一内包层和第二内包层,所述第一内包层与第二内包层之间形成一所述类阶梯式的凹陷结构;所述芯层的相对折射率差△n1为0.35%~0.45%,所述第一内包层的相对折射率差△n2为0.02%~0.04%,所述第二内包层的相对折射率差△n3为0.1%~0.18%。Further, the inner cladding layer includes a first inner cladding layer and a second inner cladding layer from the inside out, and a stepped recessed structure is formed between the first inner cladding layer and the second inner cladding layer; the core The relative refractive index difference Δn1 of the layers is 0.35% to 0.45%, the relative refractive index difference Δn2 of the first inner cladding layer is 0.02% to 0.04%, and the relative refractive index difference Δn3 of the second inner cladding layer is 0.1 %~0.18%.
进一步的,所述内包层喷灯包括用于沉积所述第一内包层的第一内包层喷灯和用于沉积所述第二内包层的第二内包层喷灯;所述芯层喷灯、第一内包层喷灯、第二内包层喷灯均为环状八层喷孔结构,其自内而外依次包括中心喷孔、第一环形喷孔、第二环形喷孔、第三环形喷孔、第四环形喷孔、第五环形喷孔、第六环形喷孔和第七环形喷孔。Further, the inner cladding torch includes a first inner cladding torch for depositing the first inner cladding layer and a second inner cladding torch for depositing the second inner cladding layer; the core layer torch, the first inner cladding torch The layer burner and the second inner cladding burner are all annular eight-layer spray hole structures, which sequentially include a central spray hole, a first annular spray hole, a second annular spray hole, a third annular spray hole, and a fourth annular spray hole from inside to outside. The injection hole, the fifth annular injection hole, the sixth annular injection hole and the seventh annular injection hole.
更进一步的,所述芯层喷灯的中心喷孔通有预设流量为0.4~0.8slpm的SiCl4气体与预设流量为0.02~0.06slpm的GeCl4气体;所述芯层喷灯的第一环形喷孔通有预设流量为3~6slpm的氢气,所述芯层喷灯的第二环形喷孔通有预设流量为2~4slpm的氩气,所述芯层喷灯的第三环形喷孔通有预设流量为18~26slpm的氧气,所述芯层喷灯的第四环形喷孔通有预设流量为3~4.6slpm的氩气,所述芯层喷灯的第五环形喷孔通有预设流量为18~24slpm的氢气,所述芯层喷灯的第六环形喷孔通有预设流量为3.2~4.8slpm的氩气,所述芯层喷灯的第七环形喷孔通有预设流量为18~22slpm的氧气。Further, the central orifice of the core layer burner is provided with SiCl 4 gas with a preset flow rate of 0.4-0.8slpm and GeCl 4 gas with a preset flow rate of 0.02-0.06slpm; the first annular shape of the core layer burner The orifice passes through the hydrogen gas with a preset flow rate of 3-6 slpm, the second annular spray hole of the core layer burner passes through the argon gas with a preset flow rate of 2-4 slpm, and the third annular spray hole of the core layer burner passes through the gas with a preset flow rate of 2-4 slpm There is oxygen with a preset flow rate of 18 to 26 slpm, the fourth annular orifice of the core layer burner has a preset flow rate of 3 to 4.6 slpm of argon gas, and the fifth annular orifice of the core layer burner has a preset flow rate. The flow rate is 18-24 slpm of hydrogen, the sixth annular orifice of the core layer burner has a preset flow rate of 3.2-4.8 slpm of argon gas, and the seventh annular orifice of the core layer burner has a preset flow rate. For 18 ~ 22slpm of oxygen.
更进一步的,所述第一内包层喷灯自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为3~4.2slpm的SiCl4气体,第一环形喷孔通有预设流量为6~8slpm的氢气和预设流量为0.4~0.6slpm的四氟化碳气体,第二环形喷孔通有预设流量为3~5slpm的氩气,第三环形喷孔通有预设流量为25~45slpm的氧气,第四环形喷孔通有预设流量为4~6slpm的氩气,第五环形喷孔通有预设流量为60~80slpm的氢气,第六环形喷孔通有预设流量为4~6slpm的氩气,第七环形喷孔通有预设流量为25~45slpm的氧气;所述第一内包层松散体密度控制范围为0.35~0.38g/cm3。Further, the gas and airflow flow through each nozzle hole of the first inner cladding torch from the inside to the outside are set as follows: the central nozzle hole is filled with SiCl4 gas with a preset flow rate of 3 to 4.2 slpm, and the first annular nozzle hole is connected with the gas. There are hydrogen gas with a preset flow rate of 6 to 8 slpm and carbon tetrafluoride gas with a preset flow rate of 0.4 to 0.6 slpm, the second annular orifice is connected with argon gas with a preset flow of 3 to 5 slpm, and the third annular spray hole is connected with There is oxygen with a preset flow rate of 25 to 45 slpm, the fourth annular orifice is passed through with argon with a preset flow of 4 to 6 slpm, the fifth annular orifice is passed with hydrogen with a preset flow of 60 to 80 slpm, and the sixth annular spray hole has a preset flow of 60 to 80 slpm. Argon gas with a preset flow rate of 4-6 slpm passes through the holes, and oxygen with a preset flow rate of 25-45 slpm passes through the seventh annular nozzle; the control range of the loose body density of the first inner cladding is 0.35-0.38 g/cm 3 .
更进一步的,所述第二内包层喷灯自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为4~5.4slpm的SiCl4气体,第一环形喷孔通有预设流量为8~10.6slpm的氢气和预设流量为1~1.6slpm的四氟化碳气体,第二环形喷孔通有预设流量为3~5slpm的氩气,第三环形喷孔通有预设流量为25~45slpm的氧气,第四环形喷孔通有预设流量为4~6slpm的氩气,第五环形喷孔通有预设流量为60~80slpm的氢气,第六环形喷孔通有预设流量为4~6slpm的氩气,第七环形喷孔通有预设流量为25~45slpm的氧气;所述第二内包层松散体密度控制范围为0.26~0.3g/cm3。Further, the gas and airflow flow through each nozzle hole of the second inner cladding torch from the inside to the outside are set as follows: the central nozzle hole is filled with SiCl4 gas with a preset flow rate of 4-5.4 slpm, and the first annular nozzle hole is connected There are hydrogen gas with a preset flow rate of 8 to 10.6 slpm and carbon tetrafluoride gas with a preset flow rate of 1 to 1.6 slpm, the second annular orifice is connected with argon gas with a preset flow of 3 to 5 slpm, and the third annular nozzle hole Oxygen with a preset flow rate of 25-45 slpm is passed through, the fourth annular orifice is passed with argon with a preset flow rate of 4-6 slpm, the fifth annular spray hole is passed with hydrogen with a preset flow of 60-80 slpm, and the sixth annular spray hole is passed with hydrogen with a preset flow rate of 60-80 slpm. Argon gas with a preset flow rate of 4-6 slpm passes through the orifice, and oxygen with a preset flow rate of 25-45 slpm passes through the seventh annular spray hole; the second inner cladding loose body density control range is 0.26-0.3 g/cm 3 .
进一步的,所述步骤(2)中进行烧结脱水处理中通入氯气和氦气。Further, in the step (2), chlorine gas and helium gas are introduced into the sintering and dehydration treatment.
本发明弯曲不敏感单模光纤的低成本加工工艺,其采用VAD工艺+OVD工艺来进行光纤预制棒的制备,尤其是在采用VAD工艺进行芯层与内包层沉积时芯层、每一层内包层沉积均对应由芯层喷灯、一内包层喷灯进行,同时其芯层喷灯、各内包层喷灯均采用环状多层喷孔结构,并且根据光纤内包层折射率剖面结构自内而外依次控制每一内包层喷灯以预设的每一内包层气体流量在芯层的末端沉积形成内包层,从而能大大简化光纤预制棒的生产流程以及整个光纤生产工艺、提高生产效率、降低生产成本;另外,其在光纤预制棒的加工过程中一方面通过将弯曲不敏感单模光纤的内包层设计成至少包括两层且至少两层内包层自内而外形成至少一个类阶梯式的凹陷结构从而能够达到内包层折射率差异要求,同时通过在松散体沉积过程中芯层喷灯和各内包层喷灯的流量适配,使得松散体能获得更好的宏弯性能,以使得所生产的光纤满足ITU-T G.657光纤标准。The low-cost processing technology of the bending-insensitive single-mode optical fiber of the present invention adopts the VAD process + OVD process to prepare the optical fiber preform, especially when the core layer and the inner cladding layer are deposited by the VAD process, the core layer and the inner cladding layer of each layer are The layer deposition is carried out by a core layer torch and an inner cladding torch. Meanwhile, the core layer torch and each inner cladding torch all adopt a ring-shaped multi-layer nozzle structure, and are controlled from the inside to the outside according to the refractive index profile structure of the inner cladding of the optical fiber. Each inner cladding torch deposits an inner cladding layer at the end of the core layer with a preset flow rate of each inner cladding gas, thereby greatly simplifying the production process of the optical fiber preform and the entire optical fiber production process, improving production efficiency and reducing production costs; in addition On the one hand, during the processing of the optical fiber preform, the inner cladding of the bend-insensitive single-mode optical fiber is designed to include at least two layers, and at least two inner cladding layers form at least one step-like concave structure from the inside to the outside. Meet the requirements of the difference in the refractive index of the inner cladding, and at the same time, through the adaptation of the flow rates of the core layer torch and each inner cladding torch during the deposition of the loose body, the loose body can obtain better macrobending performance, so that the produced fiber can meet ITU-T requirements. G.657 fiber optic standard.
附图说明Description of drawings
图1为本发明实施例的弯曲不敏感光纤折射率剖面示意图;1 is a schematic cross-sectional view of the refractive index of a bend-insensitive optical fiber according to an embodiment of the present invention;
图2为本发明实施例的弯曲不敏感光纤的径向剖面结构示意图;2 is a schematic diagram of a radial cross-sectional structure of a bend-insensitive optical fiber according to an embodiment of the present invention;
图3为本发明实施例中芯层喷灯和内包层喷灯所采用的环状多层喷孔结构示意图;3 is a schematic diagram of the annular multi-layer orifice structure adopted by the core layer burner and the inner clad burner in the embodiment of the present invention;
图4为本发明实施例中的芯层喷灯与两个内包层喷灯的沉积示意图。FIG. 4 is a schematic diagram of deposition of a core layer torch and two inner clad layer torches in an embodiment of the present invention.
附图标记:10-芯层,21a-第一内包层,21b-第二内包层,22-外包层,23-芯棒松散体,30-沉积设备,31-腔体,32-芯层喷灯,33a-第一内包层喷灯,33b-第二内包层喷灯,34a-中心喷孔,34b-第一环形喷孔,34c-第二环形喷孔,34d-第三环形喷孔,34e-第四环形喷孔,34f-第五环形喷孔,34g-第六环形喷孔,34h-第七环形喷孔,35-进风系统,36-抽风系统,36-初始靶棒Reference numerals: 10-core layer, 21a-first inner cladding layer, 21b-second inner cladding layer, 22-outer cladding layer, 23-mandrel loose body, 30-deposition equipment, 31-cavity, 32-core layer torch , 33a-the first inner cladding burner, 33b-the second inner cladding burner, 34a-the central spray hole, 34b-the first annular spray hole, 34c-the second annular spray hole, 34d-the third annular spray hole, 34e-the first annular spray hole Four annular nozzle holes, 34f- fifth ring nozzle hole, 34g- sixth ring nozzle hole, 34h- seventh ring nozzle hole, 35- air inlet system, 36- exhaust system, 36- initial target rod
具体实施方式Detailed ways
实施例一:Example 1:
一种弯曲不敏感单模光纤的低成本加工工艺,其先制备光纤预制棒、再对所述光纤预制棒进行拉丝处理即得到弯曲不敏感光纤;见图1和图2,弯曲不敏感单模光纤包括中心的芯层10、围绕并与芯层接触的包层,包层自内而外包括内包层和外包层22;本实施例中,内包层包括两层,分别为第一内包层21a和第二内包层21b且第一内包层与第二内包层自内而外形成一个类阶梯式的凹陷结构;芯层10的相对折射率差△n1为0.35%~0.45%,第一内包层21a的相对折射率差△n2为0.02%~0.04%,第二内包层21b的相对折射率差△n3为0.1%~0.18%。A low-cost processing process for a bend-insensitive single-mode optical fiber, which first prepares an optical fiber preform, and then performs a wire drawing process on the optical fiber preform to obtain a bend-insensitive optical fiber; see Figures 1 and 2, the bend-insensitive single-mode optical fiber The optical fiber includes a
其中,光纤预制棒的制备包括:Among them, the preparation of the optical fiber preform includes:
步骤(1),应用VAD工艺通过沉积设备沉积得到由芯层和内包层形成的芯棒松散体23;见图4,沉积设备30包括腔体31、以及设置于腔体31内的芯层喷灯32、第一内包层喷灯33a、第二内包层喷灯33b,第一内包层喷灯33a用于沉积第一内包层21a,第二内包层喷灯33b用于沉积第二内包层21b;芯层喷灯32、第一内包层喷灯33a、第二内包层喷灯33b均为环状多层喷孔结构,本实施例中芯层喷灯32、第一内包层喷灯33a、第二内包层喷灯33c均为环状八层喷孔结构,见图3,其自内而外依次包括中心喷孔34a、第一环形喷孔34b、第二环形喷孔34c、第三环形喷孔34d、第四环形喷孔34e、第五环形喷孔34f、第六环形喷孔34g和第七环形喷孔34h;初始靶棒37从顶部伸入到腔体31内并由控制系统控制其以设定的速度旋转并向上提升,控制系统控制芯层喷灯32先以预设的沉积气体流量在初始靶棒的末端沉积形成芯层10,控制系统根据光纤内包层折射率剖面结构自内而外依次控制每一内包层喷灯以预设的每一内包层气体流量在芯层10的末端沉积形成相应的第一内包层21a和第二内包层21b。Step (1), applying the VAD process to deposit through the deposition equipment to obtain the loose core rod 23 formed by the core layer and the inner cladding layer; as shown in FIG. 4 , the
沉积设备30还包括进风系统35和抽风系统36,腔体31的一侧设置有进风系统35、相对的另一侧设置有抽风系统36。The
本实施例中,芯层喷灯32的中心喷孔34a通有预设流量为0.46slpm的SiCl4气体与预设流量为0.035slpm的GeCl4气体;芯层喷灯32的第一环形喷孔34b通有预设流量为4.1slpm的氢气,芯层喷灯32的第二环形喷孔34c通有预设流量为2.6slpm的氩气,芯层喷灯32的第三环形喷孔34d通有预设流量为18.2slpm的氧气,芯层喷灯32的第四环形喷孔34e通有预设流量为3.6slpm的氩气,芯层喷灯32的第五环形喷孔34f通有预设流量为20.4slpm的氢气,芯层喷灯32的第六环形喷孔34g通有预设流量为4slpm的氩气,芯层喷灯32的第七环形喷孔34h通有预设流量为19.3slpm的氧气。In this embodiment, the
第一内包层喷灯33a自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为4slpm的SiCl4气体,第一环形喷孔通有预设流量为7.2slpm的氢气和预设流量为0.42slpm的四氟化碳气体,第二环形喷孔通有预设流量为3.2slpm的氩气,第三环形喷孔通有预设流量为30slpm的氧气,第四环形喷孔通有预设流量为5slpm的氩气,第五环形喷孔通有预设流量为76slpm的氢气,第六环形喷孔通有预设流量为4.8slpm的氩气,第七环形喷孔通有预设流量为35slpm的氧气;第一内包层松散体密度控制范围为0.365g/cm3。The first
第二内包层喷灯33b自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为4.2slpm的SiCl4气体,第一环形喷孔通有预设流量为10.2slpm的氢气和预设流量为1.4slpm的四氟化碳气体,第二环形喷孔通有预设流量为4slpm的氩气,第三环形喷孔通有预设流量为38slpm的氧气,第四环形喷孔通有预设流量为5.3slpm的氩气,第五环形喷孔通有预设流量为78slpm的氢气,第六环形喷孔通有预设流量为5.3slpm的氩气,第七环形喷孔通有预设流量为42slpm的氧气;第二内包层松散体密度控制范围为0.272g/cm3。The second
制得的芯棒松散体直径210mm,整体密度为0.316g/cm3。The obtained mandrel loose body had a diameter of 210 mm and an overall density of 0.316 g/cm 3 .
步骤(2),将芯棒松散体依次经过烧结脱水处理、拉伸处理后得到直径为40mm的透明玻璃芯棒,其中在烧结脱水处理中通入氯气和氦气;Step (2), the mandrel loose body is successively subjected to sintering dehydration treatment and stretching treatment to obtain a transparent glass mandrel with a diameter of 40mm, wherein chlorine and helium are introduced into the sintering dehydration treatment;
步骤(3),应用OVD工艺在透明玻璃芯棒外表面沉积形成外包层,沉积的外包层为纯二氧化硅粉尘,后经过烧结得到光纤预制棒。In step (3), an OVD process is applied to deposit an outer cladding on the outer surface of the transparent glass core rod, and the deposited outer cladding is pure silica dust, which is then sintered to obtain an optical fiber preform.
本实施例制得的光纤的典型参数见下表:The typical parameters of the optical fibers prepared in this example are shown in the following table:
采用本实施例工艺制成的上述光纤全部满足ITU-T G.657光纤标准。The above-mentioned optical fibers manufactured by the process of this embodiment all meet the ITU-T G.657 optical fiber standard.
实施例二:Embodiment 2:
本实施例与实施例一的不同之处仅在于应用VAD工艺通过沉积设备沉积得到由芯层和内包层形成的芯棒松散体的过程中,芯层喷灯32、第一内包层喷灯33a和第二内包层喷灯33b的各层喷孔所通气体的预设流量不同:The difference between this embodiment and the first embodiment is only in that the core layer torch 32, the first inner clad
本实施例中:芯层喷灯32的中心喷孔34a通有预设流量为0.4slpm的SiCl4气体与预设流量为0.06slpm的GeCl4气体;芯层喷灯32的第一环形喷孔34b通有预设流量为4.5slpm的氢气,芯层喷灯32的第二环形喷孔34c通有预设流量为3slpm的氩气,芯层喷灯32的第三环形喷孔34d通有预设流量为18slpm的氧气,芯层喷灯32的第四环形喷孔34e通有预设流量为4.6slpm的氩气,芯层喷灯32的第五环形喷孔34f通有预设流量为21slpm的氢气,芯层喷灯32的第六环形喷孔34g通有预设流量为4.8slpm的氩气,芯层喷灯32的第七环形喷孔34h通有预设流量为18slpm的氧气。In the present embodiment: the
第一内包层喷灯33a自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为3.6slpm的SiCl4气体,第一环形喷孔通有预设流量为7slpm的氢气和预设流量为0.4slpm的四氟化碳气体,第二环形喷孔通有预设流量为5slpm的氩气,第三环形喷孔通有预设流量为35slpm的氧气,第四环形喷孔通有预设流量为4slpm的氩气,第五环形喷孔通有预设流量为70slpm的氢气,第六环形喷孔通有预设流量为6slpm的氩气,第七环形喷孔通有预设流量为45slpm的氧气;第一内包层松散体密度控制范围为0.38g/cm3。The first
第二内包层喷灯33b自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为4slpm的SiCl4气体,第一环形喷孔通有预设流量为9.3slpm的氢气和预设流量为1.6slpm的四氟化碳气体,第二环形喷孔通有预设流量为4slpm的氩气,第三环形喷孔通有预设流量为25slpm的氧气,第四环形喷孔通有预设流量为5slpm的氩气,第五环形喷孔通有预设流量为80slpm的氢气,第六环形喷孔通有预设流量为4slpm的氩气,第七环形喷孔通有预设流量为35slpm的氧气;第二内包层松散体密度控制范围为0.28g/cm3。The second
实施例三:Embodiment three:
本实施例三与实施例一~二的不同之处仅在于应用VAD工艺通过沉积设备沉积得到由芯层和内包层形成的芯棒松散体的过程中,芯层喷灯32、第一内包层喷灯33a和第二内包层喷灯33b的各层喷孔所通气体的预设流量不同:The difference between the third embodiment and the first to second embodiments is only in that the core layer burner 32, the first inner clad burner 32 and the first inner clad burner are in the process of obtaining the mandrel loose body formed by the core layer and the inner cladding layer by applying the VAD process to deposit by the deposition equipment. The preset flow rates of the gases passing through the orifices of each layer of the second
本实施例中,芯层喷灯32的中心喷孔通有预设流量为0.6slpm的SiCl4气体与预设流量为0.04slpm的GeCl4气体;所述芯层喷灯的第一环形喷孔通有预设流量为3slpm的氢气,所述芯层喷灯的第二环形喷孔通有预设流量为4slpm的氩气,所述芯层喷灯的第三环形喷孔通有预设流量为22slpm的氧气,所述芯层喷灯的第四环形喷孔通有预设流量为3.8slpm的氩气,所述芯层喷灯的第五环形喷孔通有预设流量为18slpm的氢气,所述芯层喷灯的第六环形喷孔通有预设流量为4slpm的氩气,所述芯层喷灯的第七环形喷孔通有预设流量为20slpm的氧气。In this embodiment, the central orifice of the core layer torch 32 is passed through with SiCl 4 gas with a preset flow rate of 0.6slpm and GeCl 4 gas with a preset flow rate of 0.04slpm; The preset flow rate of hydrogen gas is 3slpm, the second annular nozzle hole of the core layer burner has a preset flow rate of 4slpm of argon gas, and the third annular nozzle hole of the core layer burner has a preset flow rate of 22slpm oxygen gas. , the fourth annular orifice of the core layer torch passes through the argon gas with a preset flow rate of 3.8 slpm, the fifth annular orifice of the core layer torch passes through the hydrogen gas with a preset flow rate of 18 slpm, and the core layer torch passes through the gas with a preset flow rate of 18 slpm. The sixth annular orifice of the core layer burner passes through argon with a preset flow rate of 4 slpm, and the seventh annular orifice of the core layer burner passes through oxygen with a preset flow rate of 20 slpm.
本实施例中,第一内包层喷灯33a自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为4.2slpm的SiCl4气体,第一环形喷孔通有预设流量为8slpm的氢气和预设流量为0.5slpm的四氟化碳气体,第二环形喷孔通有预设流量为3slpm的氩气,第三环形喷孔通有预设流量为45slpm的氧气,第四环形喷孔通有预设流量为5slpm的氩气,第五环形喷孔通有预设流量为60slpm的氢气,第六环形喷孔通有预设流量为5slpm的氩气,第七环形喷孔通有预设流量为25slpm的氧气;第一内包层松散体密度控制范围为0.363g/cm3。In this embodiment, the gas and airflow flow through each nozzle hole of the first
本实施例中,第二内包层喷灯33b自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为4.7slpm的SiCl4气体,第一环形喷孔通有预设流量为8slpm的氢气和预设流量为1.3slpm的四氟化碳气体,第二环形喷孔通有预设流量为5slpm的氩气,第三环形喷孔通有预设流量为35slpm的氧气,第四环形喷孔通有预设流量为4slpm的氩气,第五环形喷孔通有预设流量为70slpm的氢气,第六环形喷孔通有预设流量为6slpm的氩气,第七环形喷孔通有预设流量为25slpm的氧气;所述第二内包层松散体密度控制范围为0.3g/cm3。In this embodiment, the gas and airflow flow through the nozzle holes of the second
实施例四:Embodiment 4:
本实施例与实施例一~三的不同之处仅在于应用VAD工艺通过沉积设备沉积得到由芯层和内包层形成的芯棒松散体的过程中,芯层喷灯32、第一内包层喷灯33a和第二内包层喷灯33b的各层喷孔所通气体的预设流量不同:The difference between this embodiment and the first to third embodiments is only in that the core layer burner 32 and the first inner clad
本实施例中,芯层喷灯32的中心喷孔通有预设流量为0.8slpm的SiCl4气体与预设流量为0.02slpm的GeCl4气体;所述芯层喷灯的第一环形喷孔通有预设流量为6slpm的氢气,所述芯层喷灯的第二环形喷孔通有预设流量为2slpm的氩气,所述芯层喷灯的第三环形喷孔通有预设流量为26slpm的氧气,所述芯层喷灯的第四环形喷孔通有预设流量为3slpm的氩气,所述芯层喷灯的第五环形喷孔通有预设流量为24slpm的氢气,所述芯层喷灯的第六环形喷孔通有预设流量为3.2slpm的氩气,所述芯层喷灯的第七环形喷孔通有预设流量为22slpm的氧气。In this embodiment, the central orifice of the core layer torch 32 is passed through with SiCl 4 gas with a preset flow rate of 0.8slpm and GeCl 4 gas with a preset flow rate of 0.02slpm; The preset flow rate is 6slpm of hydrogen gas, the second annular nozzle hole of the core layer burner has a preset flow rate of 2slpm of argon, and the third annular nozzle hole of the core layer burner has a preset flow rate of 26slpm oxygen gas , the fourth annular orifice of the core layer torch passes through argon with a preset flow rate of 3 slpm, the fifth annular orifice of the core layer torch is passed through with hydrogen gas with a preset flow rate of 24 slpm, and the core layer torch has a flow rate of 24 slpm. Argon gas with a preset flow rate of 3.2 slpm passes through the sixth annular orifice, and oxygen with a preset flow rate of 22 slpm passes through the seventh annular orifice of the core layer burner.
本实施例中,第一内包层喷灯33a自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为3slpm的SiCl4气体,第一环形喷孔通有预设流量为6slpm的氢气和预设流量为0.6slpm的四氟化碳气体,第二环形喷孔通有预设流量为4slpm的氩气,第三环形喷孔通有预设流量为25slpm的氧气,第四环形喷孔通有预设流量为6slpm的氩气,第五环形喷孔通有预设流量为80slpm的氢气,第六环形喷孔通有预设流量为4slpm的氩气,第七环形喷孔通有预设流量为35slpm的氧气;所述第一内包层松散体密度控制范围为0.35g/cm3。In this embodiment, the gas and airflow flow through the nozzle holes of the first
本实施例中,第二内包层喷灯33b自内而外各喷孔所通气体及气流流量设置为:中心喷孔通有预设流量为5.4slpm的SiCl4气体,第一环形喷孔通有预设流量为10.6slpm的氢气和预设流量为1slpm的四氟化碳气体,第二环形喷孔通有预设流量为3slpm的氩气,第三环形喷孔通有预设流量为45slpm的氧气,第四环形喷孔通有预设流量为6slpm的氩气,第五环形喷孔通有预设流量为60slpm的氢气,第六环形喷孔通有预设流量为5slpm的氩气,第七环形喷孔通有预设流量为45slpm的氧气;所述第二内包层松散体密度控制范围为0.26g/cm3。In this embodiment, the gas and airflow flow through the nozzle holes of the second
本发明弯曲不敏感光纤的低成本加工工艺,采用了VAD+OVD相结合的工艺流程,通过在芯棒生产过程中在松散体中掺入F,并控制不同喷灯气体流量,进而控制松散体包层密度,配合通入CF4的量,完成外包层折射率的控制,烧结后得到类阶梯式下降凹陷的内包结构,该结构大幅度降低了芯包间黏度匹配问题,并通过OVD进行光棒制备,拉丝后,在光纤性能不变的情况下,光纤宏弯衰减满足ITU-T G.657光纤标准。The low-cost processing technology of the bend-insensitive optical fiber of the present invention adopts the combined process of VAD+OVD, by incorporating F into the loose body during the production process of the mandrel, and controlling the gas flow rate of different torches, thereby controlling the loose body package The density of the cladding layer, and the amount of CF4 introduced into it, completes the control of the refractive index of the outer cladding. After sintering, the inner cladding structure like a stepped descending depression is obtained. This structure greatly reduces the viscosity matching problem between the core cladding, and the optical rod is prepared by OVD. After drawing, the fiber macrobend attenuation meets the ITU-T G.657 fiber standard under the condition that the fiber performance remains unchanged.
以上对本发明的具体实施进行了详细说明,但内容仅为本发明创造的较佳实施方案,不能被认为用于限定本发明创造的实施范围。凡依本发明创造申请范围所作的均等变化与改进等,均应仍归属于本发明的专利涵盖范围之内。The specific implementation of the present invention has been described in detail above, but the content is only a preferred embodiment of the present invention, and cannot be considered to limit the implementation scope of the present invention. All equivalent changes and improvements made according to the scope of the application of the invention should still fall within the scope of the patent of the present invention.
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