CN116377367A - Preparation method of ZnTe alloy target material - Google Patents
Preparation method of ZnTe alloy target material Download PDFInfo
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- CN116377367A CN116377367A CN202310232401.9A CN202310232401A CN116377367A CN 116377367 A CN116377367 A CN 116377367A CN 202310232401 A CN202310232401 A CN 202310232401A CN 116377367 A CN116377367 A CN 116377367A
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- 229910007709 ZnTe Inorganic materials 0.000 title claims abstract description 93
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 93
- 239000000956 alloy Substances 0.000 title claims abstract description 93
- 239000013077 target material Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 57
- 238000005245 sintering Methods 0.000 claims abstract description 26
- 238000007751 thermal spraying Methods 0.000 claims abstract description 18
- 238000005488 sandblasting Methods 0.000 claims abstract description 15
- 238000007873 sieving Methods 0.000 claims abstract description 15
- 238000000498 ball milling Methods 0.000 claims abstract description 14
- 238000011068 loading method Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 239000004576 sand Substances 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000010935 stainless steel Substances 0.000 claims description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims description 19
- 239000007921 spray Substances 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000009689 gas atomisation Methods 0.000 claims description 5
- 229910052950 sphalerite Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000889 atomisation Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 241000357293 Leptobrama muelleri Species 0.000 description 14
- 239000011701 zinc Substances 0.000 description 11
- 238000005507 spraying Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 4
- 238000012387 aerosolization Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009770 conventional sintering Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/142—Thermal or thermo-mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
- B22F2009/043—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by ball milling
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- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention discloses a preparation method of ZnTe alloy target material, which relates to the field of sputter coating, and the technical scheme is as follows: a preparation method of a ZnTe alloy target material comprises the following step S1: cleaning and drying Zn ingots and Te ingots serving as raw materials, loading the dried Zn ingots and Te ingots into a crucible according to atomic mass parts, and adding the crucible into an air atomization device at the temperature of 1300-1400 ℃ and the pressure of 3-5MPa to prepare ZnTe alloy powder; s2: ball milling the alloy powder and sieving to obtain sieving powder smaller than 50 um; s3: sintering the sieved powder by a sintering furnace at 950-1100 ℃ for 4-7 hours to obtain ZnTe alloy sintered powder; s4: carrying out sand blasting treatment on the back target, wherein the mesh number of the sand for sand blasting is as follows: 40-60 meshes; combining the ZnTe alloy sintering powder with a back target through thermal spraying equipment to obtain a ZnTe alloy blank target; s5: polishing and processing the ZnTe alloy blank target material to obtain the ZnTe alloy target material. The method can prepare the ZnTe alloy target material with good conductivity.
Description
Technical Field
The invention relates to the field of sputter coating, in particular to a preparation method of a ZnTe alloy target material.
Background
ZnTe with a molecular weight of 193.01 and a common melting point of 1239 ℃ is a compound consisting of 66.11% of Te and 33.89% of Zn. ZnTe is an excellent compound semiconductor, and the high-quality ZnTe material can greatly improve the luminous efficiency of green LEDs. ZnTe is a typical II-VI compound, the structure of ZnTe is two, namely a sphalerite structure and a wurtzite structure, and the invention aims at the sphalerite structure ZnTe. The preparation of single crystal ZnTe target material is difficult because of higher melting point, and the conductivity of the ZnTe target material directly influences the sputtering efficiency and the uniformity of the film.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a preparation method of a ZnTe alloy target material, which can prepare a high-performance ZnTe alloy rotary target material with high density and good conductivity.
The technical aim of the invention is realized by the following technical scheme: the preparation method of the ZnTe alloy target material comprises the following steps:
s1: cleaning and drying Zn ingots and Te ingots serving as raw materials, loading the dried Zn ingots and Te ingots into a crucible according to atomic mass parts, and adding the crucible into gas atomization equipment with protective atmosphere, wherein the temperature is 1300-1400 ℃, and the pressure is 3-5MPa, so as to prepare ZnTe alloy powder;
s2: carrying out roller ball milling on the alloy powder, wherein the rotating speed is 30-80 r/min, the mixing time is 2-8h, the ball milling medium is columnar zirconia balls, the sizes are phi 10 x 10, phi 8 x 8mm and phi 12 x 12mm, and the ball-material ratio is 1:1-5:1, the loading capacity is 1/3-2/3; sieving to obtain sieving powder less than 50 um;
s3: sintering the sieved powder by a sintering furnace at 950-1100 ℃ for 4-7 hours to obtain ZnTe alloy sintered powder;
s4: carrying out sand blasting treatment on the back target, wherein the mesh number of the sand for sand blasting is as follows: 40-60 meshes; combining the ZnTe alloy sintering powder with a back target through thermal spraying equipment to obtain a ZnTe alloy blank target;
s5: polishing and processing the ZnTe alloy blank target material to obtain the ZnTe alloy target material.
The invention is further provided with: in the step S4, the rotating speed of the back target is 50-150r/min, the distance between the spray gun and the outer surface of the back target is 80-120mm, and the moving speed of the spray gun is 200-400mm/min during thermal spraying.
The invention is further provided with: in the step S4, inert gas argon or nitrogen is used for atmosphere protection during thermal spraying.
The invention is further provided with: in step S1, the protective atmosphere in the gas atomization apparatus is argon or vacuum.
The invention is further provided with: in the step S4, the thermal spraying is to heat and melt ZnTe alloy sintered powder, atomize the powder into particles by high-speed air flow, and spray the particles onto the surface of a back target at a certain speed to form a coating.
The invention is further provided with: in the step S4, the back target is a flat plate or a round tube made of stainless steel or alloy.
The invention is further provided with: the backing plate is spray-primed prior to thermal spraying.
The invention is further provided with: the ZnTe is a sphalerite structure.
In summary, the invention has the following beneficial effects: the ZnTe alloy target prepared by the method has the advantages that the conductivity is greatly improved, crystal grains in a local area of the target prepared by the conventional sintering process are abnormally grown, the structure is very uneven, a large number of gaps appear in the crystal grains in the growing process, so that the resistance is larger, and the problems cannot occur in the ZnTe alloy target prepared by the method.
Drawings
FIG. 1 is a powder state diagram after ball milling.
Description of the embodiments
The present invention will be described in detail below with reference to the accompanying drawings and examples.
The invention provides a ZnTe alloy target preparation method, which comprises the following steps:
s1: and cleaning and drying Zn ingots and Te ingots serving as raw materials, loading the dried Zn ingots and Te ingots into a crucible according to atomic mass parts, and adding the crucible into an air atomization device. Protective atmosphere: argon or vacuum. The temperature is 1300-1400 ℃, and the pressure is 3-5MPa, so that ZnTe alloy powder is prepared;
s2: carrying out roller ball milling on the alloy powder, wherein the rotating speed is 30-80 r/min, the mixing time is 2-8h, the ball milling medium is columnar zirconia balls, the sizes are phi 10 x 10, phi 8 x 8mm and phi 12 x 12mm, and the ball-material ratio is 1:1-5:1, the loading capacity is 1/3-2/3; sieving to obtain sieving powder of < 50um, the state of which is shown in figure 1;
s3: sintering the obtained ZnTe alloy powder by a sintering furnace, and preserving the temperature of the sintering furnace for 4-7 hours at 950-1100 ℃ to obtain ZnTe alloy sintered powder;
s4: carrying out sand blasting treatment on the stainless steel back tube after processing, wherein the mesh number of the sand for sand blasting is as follows: 40-60 meshes; and combining the ZnTe alloy sintering powder with a stainless steel back tube through thermal spraying equipment, and performing atmosphere protection by using inert gas argon or nitrogen during spraying to obtain the ZnTe alloy blank target. Wherein the rotation speed of the stainless steel back tube is 50-150r/min, the distance between the spray gun and the outer surface of the stainless steel back tube is 80-120mm, and the moving speed of the spray gun is 200-400mm/min. Spraying the ZnTe alloy sintered powder obtained in the step S3 on a back target in the atmosphere of protective gas to obtain a ZnTe alloy blank target;
wherein, the thermal spraying is to heat and melt ZnTe alloy sintered powder, atomize the powder into extremely fine particles by high-speed air flow, and spray the extremely fine particles onto the surface of a back target at a high speed to form a coating.
The back target refers to a carrier for binding the target, such as a flat plate or a round tube made of stainless steel or alloy. Before thermal spraying, the method can further comprise the steps of carrying out sand blasting treatment after processing the back target and spraying a priming layer.
Wherein the protective gas is argon or nitrogen, and the thermal spraying under the protective gas atmosphere can prevent the sprayed powder from contacting with oxygen in the air in a molten state, so as to avoid the influence of the electric conductivity caused by the complete oxidation of the powder again.
S5: polishing and processing the ZnTe alloy blank target material to obtain the ZnTe alloy target material.
Experiments prove that the relative density of the ZnTe alloy target material prepared by the preparation method of the ZnTe alloy target material is more than or equal to 90 percent, and the resistivity of the ZnTe alloy target material is less than or equal to 6 multiplied by 10 5 Omega cm, therefore, the high-performance ZnTe alloy rotary target with good compactness and conductivity can be obtained by the preparation method of the ZnTe alloy target.
The specific implementation cases are as follows:
examples
S1: and cleaning and drying Zn ingots and Te ingots serving as raw materials, loading the dried Zn ingots and Te ingots into a crucible according to atomic mass parts, and adding the crucible into an air atomization device. The protective atmosphere is vacuum; the temperature is 1300 ℃, and the pressure is 5MPa, so that ZnTe alloy powder is prepared;
s2: performing roller ball milling on the alloy powder, wherein the rotating speed is 30 r/min, the mixing time is 2h, the ball milling medium is columnar zirconia balls, the size is phi 10 x 10, and the ball-to-material ratio is 1:1, the loading capacity is 1/3; sieving to obtain sieving powder less than 50 um;
s3: sintering the ZnTe alloy powder by a sintering furnace, and preserving the temperature of the sintering furnace for 7 hours at 1100 ℃ to obtain ZnTe alloy sintered powder;
s4: carrying out sand blasting treatment on the stainless steel back tube after processing, wherein the mesh number of the sand for sand blasting is as follows: 60 meshes; and combining the ZnTe alloy sintering powder with a stainless steel back pipe through thermal spraying equipment, and performing atmosphere protection by using inert gas nitrogen during spraying to obtain the ZnTe alloy blank target. The rotating speed of the stainless steel back pipe is 50r/min, the distance between the spray gun and the outer surface of the stainless steel back pipe is 100mm, and the moving speed of the spray gun is 300mm/min. Spraying the ZnTe alloy sintered powder obtained in the step S3 on a back target in the atmosphere of protective gas to obtain a ZnTe alloy blank target;
s5: polishing and processing the ZnTe alloy blank target material to obtain the ZnTe alloy target material.
Examples
S1: and cleaning and drying Zn ingots and Te ingots serving as raw materials, loading the dried Zn ingots and Te ingots into a crucible according to atomic mass parts, and adding the crucible into an air atomization device. The protective atmosphere is argon; preparing ZnTe alloy powder at 1350 ℃ and under the pressure of 4 MPa;
s2: carrying out roller ball milling on the alloy powder, wherein the rotating speed is 50r/min, the mixing time is 5h, the ball milling medium is columnar zirconia balls, the size is phi 8mm x 8mm, and the ball-to-material ratio is 3:1, the loading capacity is 1/2; sieving to obtain sieving powder less than 50 um;
s3: and sintering the ZnTe alloy powder by a sintering furnace, and preserving the temperature of the sintering at 950 ℃ for 4 hours to obtain the ZnTe alloy sintered powder.
S4: carrying out sand blasting treatment on the stainless steel back tube after processing, wherein the mesh number of the sand for sand blasting is as follows: 40 mesh; and combining the ZnTe alloy sintering powder with a stainless steel back pipe through thermal spraying equipment, and performing atmosphere protection by using inert gas nitrogen during spraying to obtain the ZnTe alloy blank target. Wherein, the rotational speed of stainless steel backing tube is 150r/min, and the distance of spray gun and stainless steel backing tube surface is 80mm, and the velocity of movement of spray gun is 200mm/min. Spraying the ZnTe alloy sintered powder obtained in the step S3 on a back target in the atmosphere of protective gas to obtain a ZnTe alloy blank target;
s5: polishing and processing the ZnTe alloy blank target material to obtain the ZnTe alloy target material.
Examples
S1: cleaning and drying Zn ingots and Te ingots serving as raw materials, loading the dried Zn ingots and Te ingots into a crucible according to atomic mass parts, and adding the crucible into gas atomization equipment, wherein the protective atmosphere is argon; the temperature is 1400 ℃, and the pressure is 3MPa, so that ZnTe alloy powder is prepared;
s2: carrying out roller ball milling on the alloy powder, wherein the rotating speed is 80 r/min, the mixing time is 8h, the ball milling medium is columnar zirconia balls, the size is phi 12 x 12mm, and the ball-to-material ratio is 5:1, the loading capacity is 2/3; sieving to obtain sieving powder less than 50 um;
s3: sintering the ZnTe alloy powder by a sintering furnace, and preserving the temperature of 1000 ℃ for 5.5 hours to obtain ZnTe alloy sintered powder;
s4: carrying out sand blasting treatment on the stainless steel back tube after processing, wherein the mesh number of the sand for sand blasting is as follows: 60 meshes; and combining the ZnTe alloy sintering powder with a stainless steel back pipe through thermal spraying equipment, and performing atmosphere protection by using inert gas argon during spraying to obtain the ZnTe alloy blank target. The rotating speed of the stainless steel back pipe is 100r/min, the distance between the spray gun and the outer surface of the stainless steel back pipe is 120mm, and the moving speed of the spray gun is 400mm/min. Spraying the ZnTe alloy sintered powder obtained in the step S3 on a back target in the atmosphere of protective gas to obtain a ZnTe alloy blank target;
s5: polishing and processing the ZnTe alloy blank target material to obtain the ZnTe alloy target material.
Comparative example 1
S1: preparing zinc telluride simple substance mixed particles: and selecting zinc telluride, crushing and sieving the zinc telluride to obtain a plurality of groups of powder with different particle size ranges, and obtaining mixed particles.
S2: re-mixing the mixed particles in a mixer for 2 hours, and then carrying out heat preservation and drying on the mixed particles at 150 ℃ for 2 hours;
s3: and directly carrying out cold press molding on the dried powder, and maintaining the pressure for 20min under 240MPa to obtain a cold press blank.
S4, directly placing the canned cold-pressed blank into a heating furnace for sintering at 1050 ℃/min for 6 hours; and then discharging the zinc telluride target, air cooling, and opening a pot.
The following data were obtained for the above examples and comparative examples for detection density and resistivity:
| case (B) | Relative density of | Resistivity omega . cm |
| Example 1 (aerosolization+spray) | 90.6% | 5.7*10 5 |
| Example 2 (aerosolization + spray) | 91.37% | 4.5*10 5 |
| Example 3 (aerosolization + spray) | 92% | 3.2*10 5 |
| Comparative example 1 (common sintering) | 88% | 8.5*10 6 |
Compared with the prior art, the ZnTe alloy target material prepared by the invention has the following characteristics:
the conductivity of the target material is greatly improved, crystal grains in a local area of the target material prepared by the conventional sintering process grow up abnormally, the structure is very uneven, and a large number of gaps appear in the crystal grains in the growing process, so that the resistance is larger.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (8)
1. The preparation method of the ZnTe alloy target material is characterized by comprising the following steps of:
s1: cleaning and drying Zn ingots and Te ingots serving as raw materials, loading the dried Zn ingots and Te ingots into a crucible according to atomic mass parts, and adding the crucible into gas atomization equipment with protective atmosphere, wherein the temperature is 1300-1400 ℃, and the pressure is 3-5MPa, so as to prepare ZnTe alloy powder;
s2: carrying out roller ball milling on the alloy powder, wherein the rotating speed is 30-80 r/min, the mixing time is 2-8h, the ball milling medium is columnar zirconia balls, the sizes are phi 10 x 10, phi 8 x 8mm and phi 12 x 12mm, and the ball-material ratio is 1:1-5:1, the loading capacity is 1/3-2/3; sieving to obtain sieving powder less than 50 um;
s3: sintering the sieved powder by a sintering furnace at 950-1100 ℃ for 4-7 hours to obtain ZnTe alloy sintered powder;
s4: carrying out sand blasting treatment on the back target, wherein the mesh number of the sand for sand blasting is as follows: 40-60 meshes; combining the ZnTe alloy sintering powder with a back target through thermal spraying equipment to obtain a ZnTe alloy blank target;
s5: polishing and processing the ZnTe alloy blank target material to obtain the ZnTe alloy target material.
2. The method for preparing the ZnTe alloy target material according to claim 1, which is characterized in that: in the step S4, the rotating speed of the back target is 50-150r/min, the distance between the spray gun and the outer surface of the back target is 80-120mm, and the moving speed of the spray gun is 200-400mm/min during thermal spraying.
3. The method for preparing the ZnTe alloy target material according to claim 1, which is characterized in that: in the step S4, inert gas argon or nitrogen is used for atmosphere protection during thermal spraying.
4. The method for preparing the ZnTe alloy target material according to claim 1, which is characterized in that: in step S1, the protective atmosphere in the gas atomization apparatus is argon or vacuum.
5. The method for preparing the ZnTe alloy target material according to claim 1, which is characterized in that: in the step S4, the thermal spraying is to heat and melt ZnTe alloy sintered powder, atomize the powder into particles by high-speed air flow, and spray the particles onto the surface of a back target at a certain speed to form a coating.
6. The method for preparing the ZnTe alloy target material according to claim 1, which is characterized in that: in the step S4, the back target is a flat plate or a round tube made of stainless steel or alloy.
7. The method for preparing a ZnTe alloy target material according to claim 6, which is characterized in that: the backing plate is spray-primed prior to thermal spraying.
8. The method for preparing the ZnTe alloy target material according to claim 1, which is characterized in that: the ZnTe is a sphalerite structure.
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| CN202310232401.9A CN116377367A (en) | 2023-03-13 | 2023-03-13 | Preparation method of ZnTe alloy target material |
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| CN202310232401.9A CN116377367A (en) | 2023-03-13 | 2023-03-13 | Preparation method of ZnTe alloy target material |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0031918A2 (en) * | 1979-12-26 | 1981-07-15 | Nippon Hoso Kyokai | Method and apparatus for manufacturing a device by evaporation |
| JP2000219962A (en) * | 1999-01-29 | 2000-08-08 | Mitsubishi Materials Corp | High strength sputtering target for forming optical recording protective film |
| WO2009023529A1 (en) * | 2007-08-13 | 2009-02-19 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
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| CN114195518A (en) * | 2021-11-11 | 2022-03-18 | 深圳市众诚达应用材料科技有限公司 | Zinc telluride target, preparation method and thin-film solar cell thereof |
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| WO2010051351A2 (en) * | 2008-10-31 | 2010-05-06 | Applied Quantum Technology, Llc | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
| CN102586880A (en) * | 2012-03-26 | 2012-07-18 | 上海应用技术学院 | Preparation method of oriented ZeTe nanocrystals |
| CN107626929A (en) * | 2017-08-04 | 2018-01-26 | 米亚索乐装备集成（福建）有限公司 | A kind of method for preparing alloy powder |
| CN113073302A (en) * | 2021-04-09 | 2021-07-06 | 基迈克材料科技（苏州）有限公司 | ZMO target material and preparation method thereof |
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