CN116288131A - Method for strengthening inner and outer surfaces of high-brittleness semiconductor component with thin-wall structure - Google Patents

Abstract

The invention discloses a method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component, comprising the following steps: step 1, fixing the thin-walled highly brittle semiconductor component on a pagoda-shaped elastic fastening device to obtain a component to be processed; step 2. Deposit a coating on the inner and outer walls of the highly brittle semiconductor components in the component to be processed obtained in step 1, so as to improve the performance of the thin-walled highly brittle semiconductor components. The present invention deposits coatings on the inner and outer walls of highly brittle semiconductor components through surface modification technology, improves the performance of thin-walled highly brittle semiconductor components and expands the application range, and successfully achieves Deposit a uniform and dense functional coating on the surface of thin-walled highly brittle semiconductor components.

Description

A method for strengthening the inner and outer surfaces of thin-walled highly brittle semiconductor components

technical field

The invention belongs to the technical field of surface modification of semiconductor components, in particular to a method for strengthening the inner and outer surfaces of semiconductor components with thin-walled structures and high brittleness.

Background technique

In recent years, the electronics industry has become the largest industrial category in the world, and semiconductor devices, as the core of the electronics industry, have developed rapidly. Studies have found that the first generation of "elemental semiconductors" represented by silicon-based and germanium-based are still widely used in the manufacture of semiconductor devices and integrated circuits; the second-generation compound semiconductors represented by gallium arsenide and indium phosphide are mainly Applied in the field of optical communication; GaN and SiC-based materials are the research hotspots of the third-generation semiconductor materials, which have stronger photoelectric conversion capabilities and higher microwave signal transmission efficiency, and can well meet high High frequency, high temperature, high power and radiation-resistant electronic devices have broad application prospects in the fields of new generation mobile communications, new energy vehicles, fast charging and LED.

With the rapid development of semiconductor materials, surface modification technology is gradually being used in the semiconductor field. This technology can greatly improve or expand the working life and application fields of semiconductor components by depositing functional coatings on the surface of semiconductor components. A leap-level improvement in the overall performance of the product. However, the development of surface modification technology in the semiconductor field has certain limitations. This is mainly due to the fact that most semiconductor components are brittle and have simple geometric structures. During the process of depositing coatings, thermal stress accumulation often leads to rapid volume loss. The phenomenon of micro-crack initiation caused by expansion and high impact stress leads to local cracks or even fragmentation of components. The quartz ring of semiconductor devices in the low-temperature region is a typical case of the above phenomenon. When the lithography machine performs "lithography" and "etching" processes on the surface of silicon-based wafers, the combination of the quartz ring and the quartz gate can realize cavity alignment. The airtight protection of the body can effectively prevent various types of pollution during the chip manufacturing process. However, during use, the quartz ring is prone to wear and tear between the quartz gate, resulting in a gap, and the sealing effect fails, which greatly affects the etching efficiency of the wafer. After research, it is found that it is an economical and efficient solution to deposit a layer of high-purity coating at the micron level on the surface of the quartz ring by thermal spraying technology that is consistent with the material of the crystal plane. Thermal spraying technology is a method that uses a heat source to heat the sprayed material to a molten or semi-molten state, and sprays and deposits it on the surface of the pretreated substrate at a certain speed to form a coating. It has little influence on the substrate temperature and is not limited by the substrate material. The temperature of the heat source is adjustable and has a large range, convenient operation and no environmental pollution. Using thermal spraying technology to deposit a dense and uniform high-purity coating on the surface of the quartz ring can greatly reduce the wear rate of the quartz ring, increase the etching speed of the wafer, and significantly improve the production efficiency of the chip. However, how to formulate spraying process regulations and key parameters, and design related auxiliary devices is the key to reducing thermal stress accumulation and impact stress of flying particles, and ensuring high-quality and stable deposition of quartz rings and other highly brittle semiconductor components.

Therefore, there is a need for a method for strengthening the inner and outer surfaces of semiconductor components with thin-walled structures and high brittleness.

Contents of the invention

The technical problem to be solved by the present invention is to provide a method for strengthening the inner and outer surfaces of thin-walled highly brittle semiconductor components for the above-mentioned deficiencies in the prior art. This method uses surface modification technology to deposit coatings on the inner and outer walls of highly brittle semiconductor components to improve the performance of thin-walled highly brittle semiconductor components and expand the application range. Through the collaborative design of the preparation process and coating homogenization, it has successfully Deposit a uniform and dense functional coating on the surface of thin-walled highly brittle semiconductor components.

In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is: a method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component, characterized in that the method includes the following steps:

Step 1. Fix the thin-walled highly brittle semiconductor components on the pagoda-shaped elastic fastening device to obtain the components to be processed;

Step 2. Deposit coatings on the inner and outer walls of the highly brittle semiconductor components in the component to be processed obtained in step 1 to improve the performance of the thin-walled highly brittle semiconductor components; The functional powder raw materials are fully covered and deposited on the inner and outer walls of highly brittle semiconductor components.

The present invention utilizes a high-energy plasma meltblown method to fully cover and deposit functional powder raw materials on the inner and outer walls of highly brittle semiconductor components, thereby realizing efficient improvement of the performance of the components.

The above-mentioned method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the pagoda-shaped elastic fastening device in step 1 includes a disc-shaped base, and a plurality of pins are provided on the side wall of the base. Each of the pin holes is provided with a spring pin for fixing a thin-walled highly brittle semiconductor component. A through hole is opened in the center of the bottom of the base, and a fixed shaft is inserted in the through hole. The base The lower part is also provided with a shaft sleeve for the fixed shaft to pass through, and a locking bolt for fixing the fixed shaft is installed on the shaft sleeve, and a disc-shaped upper pressure plate is fixed on the upper part of the fixed shaft. A number of pin holes are opened on the side wall, and each of the pin holes is provided with a spring pin for fixing a thin-walled highly brittle semiconductor component.

The above-mentioned method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the spring pin includes a casing, and a spring and a push rod are sequentially installed in the casing, and a top plate is provided at the end of the push rod far away from the casing , the top plate is in the shape of a shoe, and the outside of the spring pin is provided with a thread that matches the pin hole.

The above-mentioned method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that a waist-shaped hole corresponding to the spring pin is opened on the base, and an I-shaped mobile device is clamped in the waist-shaped hole. The moving plate is provided with a baffle matched with the top plate.

The above-mentioned method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the materials of the thin-walled highly brittle semiconductor component described in step 1 and the functional powder raw material described in step 2 are both highly brittle Material, the high brittle material is glass, quartz, silicon carbide, silicon, gallium nitride, silicon nitride, zinc oxide, diamond, aluminum nitride. The invention is suitable for preparing different high-brittle material coatings on thin-walled high-brittle semiconductor components made of various materials according to usage requirements.

The above-mentioned method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the shape of the thin-walled highly brittle semiconductor component in step 1 is ring-shaped or sheet-like. The invention is applicable to various shapes and sizes of thin-walled high-brittle semiconductor components, and the rings include circular rings, square rings and polygonal rings.

The above method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the spraying power in the high-energy plasma melt blowing method described in step 2 is 35kW~50kW, and the main air flow is 50L/min~100L/min , the spraying distance is 150mm~250mm, the powder feeding rate is 10g/min~15g/min, the sweeping speed of the auxiliary manipulator is 300mm/s~500mm/s, the angle between the spray gun and the spraying surface is 30°~60°, pagoda-shaped elasticity The rotation rate of the fastening device is 1000r/min~1500r/min. According to the thermal spraying technology, the heat source temperature, powder temperature and speed can be adjusted in a large range, the influence on the substrate temperature is small, and the thickness of the deposited coating (tens to hundreds of microns) meets the requirements of clearance fit, etc., to control the high-energy plasma melting. The parameters of the spraying method enable the high-energy plasma jet to endow the protection powder raw materials of the present invention (quartz, pure silicon, gallium nitride, silicon nitride, zinc oxide, diamond, aluminum nitride and other highly brittle materials) with a high surface temperature of 1800°C~ 2500°C and flying speed 300mm/s~800mm/s, high particle temperature and temperature can not only ensure the powder particles are fully melted, but also make them fully plastically deformed and spread laterally after hitting the substrate, greatly improving the compactness of the coating , tensile strength and cohesive strength, the effect of the protection process parameter of the present invention is specifically: high spraying power improves plasma flame temperature, guarantees that powder fully melts; The impact stress of semiconductor components; high spraying distance and low powder feeding rate not only help to reduce the instantaneous temperature of molten powder deposited on the surface of the substrate, slow down the accumulation of thermal stress, but also further reduce the impact stress of flying particles; the auxiliary manipulator Sweep speed and spray gun angle are to ensure the uniformity of coating deposition.

The above method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the deposition process described in step 2 is: for the outer surface, inner surface, inner surface, The outer surface is deposited sequentially, and one deposition cycle is completed, and then the thin-walled highly brittle semiconductor component is turned over 180° and another deposition cycle is performed, and the above process is repeated and the coating thickness is measured every 10 deposition cycles until the coating thickness The deposition is stopped after the requirements are met, and the interval between two deposition cycles is not less than 2 minutes. The present invention ensures the uniformity of deposition by sequentially depositing the outer surface, inner surface, inner surface and outer surface of the thin-walled highly brittle semiconductor components, and deposits the thin-walled highly brittle semiconductor components after one deposition cycle After the device is removed from the fixture, it is turned over 180°, that is, the lowermost part of the thin-walled highly brittle semiconductor component is replaced to the uppermost. The thickness of the coating is guaranteed, by measuring the thickness of the coating every 10 deposition cycles, the deposition is stopped after the thickness reaches the requirements, and the thickness of the coating is controlled; The formation of cracks improves the compactness of the coating. By controlling the two-dimensional sweeping speed of the plasma jet generator to 300mm/s~500mm/s and the cooling interval, that is, the interval between two deposition cycles is not less than 2min and other key parameters can make the element The exothermic characteristics of the deposited but unsolidified flat particles on the surface of the deposited coating on the device are fully utilized, reducing the probability of secondary heating on the coating surface, making the overall temperature of the component evenly distributed and maintained within a safe temperature range of 50 ° C ~ 80 ° C , on this basis, combined with the protection process parameters of the present invention and the spring pin design of the fastening device, the stable preparation of the coating is finally realized.

The above-mentioned method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the high brittle semiconductor component is preheated before the deposition in step 2, and the preheating temperature is 50° C. to 80° C. , the temperature of the highly brittle semiconductor components during the deposition process does not exceed 80°C. The invention guarantees the subsequent deposition effect through preheating, and reduces the probability of secondary heating on the coating surface by controlling the temperature not to exceed 80°C, so that the overall temperature of the components is evenly distributed and maintained in a safe temperature range, and finally realizes the stability of the coating preparation.

The above-mentioned method for strengthening the inner and outer surfaces of a thin-walled highly brittle semiconductor component is characterized in that the coating in step 2 completely covers the surface of the thin-walled highly brittle semiconductor component, and the color of the coating is uniform and free of cracks , thin layer and other defects, the thickness of the coating is 5 μm to 200 μm, the uniformity error is less than 5%, and the surface roughness is less than 2 μm.

Compared with the prior art, the present invention has the following advantages:

1. The present invention deposits coatings on the inner and outer walls of highly brittle semiconductor components through surface modification technology, improves the performance of thin-walled high-brittle semiconductor components and expands the scope of application, and through the collaborative design of the preparation process and coating homogenization , and successfully deposited a uniform and dense functional coating on the surface of thin-walled highly brittle semiconductor components.

2. The present invention selects high-energy plasma spraying technology and controls process parameters. High spraying power increases the temperature of plasma flame flow to ensure that the powder is fully melted; low argon flow rate properly suppresses the speed of flying particles and reduces the impact of molten flying particles on semiconductor components. impact stress; high spraying distance and low powder feeding rate not only help to reduce the instantaneous temperature of molten powder deposited on the surface of the substrate, slow down the accumulation of thermal stress, but also further reduce the impact stress of flying particles; assist the sweeping speed of the manipulator The angle with the spray gun is to ensure the uniformity of coating deposition.

3. The present invention provides a set of fastening devices for thin-walled highly brittle semiconductor components that slow down the accumulation of thermal stress. According to the common structure of "ring and thin-walled" thin-walled components, a pagoda-shaped elastic fastening device is designed. In this device, on the one hand, a plurality of symmetrically distributed retractable spring pins are used to fasten the components. The elastic design of the spring pins can fully relieve the impact stress during the spraying process and reduce the deformation probability of the components. On the one hand, the directions of the spring pins in the upper pressure plate and the base of the device are opposite, and sliding contact can be realized between the two parts. Rotate at a certain speed, and use high-energy plasma spraying technology to deposit from the outer surface-inner surface-inner surface-outer surface of the component, and then turn the component 180° before proceeding to the next cycle, effectively ensuring that the components can be inside and outside Uniformity of surface coating.

4. The present invention uses the "intermittent deposition" method to reduce the formation of interlayer cracks between flat particles and improve the compactness of the coating. By controlling key parameters such as the two-dimensional sweep speed and cooling interval time of the plasma jet generator, the element can be made The exothermic characteristics of the deposited but unsolidified flat particles on the surface of the deposited coating on the device are fully utilized, reducing the probability of secondary heating on the coating surface, making the overall temperature of the component evenly distributed and maintained in a safe temperature range, and finally realizing the coating stable preparation.

The technical solutions of the present invention will be described in further detail below with reference to the drawings and embodiments.

Description of drawings

Fig. 1 is a structural schematic diagram of a pagoda-shaped elastic fastening device of the present invention.

Fig. 2 is a schematic diagram of the connection relationship between the base and the upper pressure plate of the pagoda-shaped elastic fastening device of the present invention.

Fig. 3 is a structural schematic view of the base of the pagoda-shaped elastic fastening device of the present invention.

Fig. 4 is a schematic structural view of the upper platen of the pagoda-shaped elastic fastening device of the present invention.

Fig. 5 is a schematic structural view of the spring pin of the pagoda-shaped elastic fastening device of the present invention.

Fig. 6 is a physical view of the annular thin-walled highly brittle semiconductor component after the coating is deposited in Example 1 of the present invention.

Fig. 7 is a cross-sectional view of the coating of the annular thin-walled highly brittle semiconductor component after the coating is deposited in Example 1 of the present invention.

Fig. 8 is a physical diagram of a square sheet-shaped thin-walled highly brittle semiconductor component after depositing a coating in Example 2 of the present invention.

FIG. 9 is an enlarged view of A in FIG. 8 .

Fig. 10 is a cross-sectional topography diagram of the coating of the square sheet-shaped thin-walled highly brittle semiconductor component after the coating is deposited in Example 2 of the present invention.

Explanation of reference signs:

1—base; 1-1—waist hole; 1-2—moving plate; 1-3—baffle; 2—spring pin; 2-1—shell; 2-2—spring;

2-3—Jump; 2-4—Top plate; 2-5—Thread; 3—Fixed shaft; 4—Axle sleeve; 5—Locking bolt; 6—Upper pressure plate.

Detailed ways

As shown in Figures 1 to 5, the pagoda-shaped elastic fastening device of the present invention includes a disc-shaped base 1, the side wall of the base 1 is provided with several pin holes, and each of the pin holes is provided with a To fix the spring pin 2 of the thin-walled highly brittle semiconductor component, a through hole is opened at the bottom center of the base 1, and a fixed shaft 3 is inserted in the through hole, and a fixed shaft 3 is also provided at the bottom of the base 1 The shaft sleeve 4 passing through, the locking bolt 5 for fixing the fixed shaft 3 is installed on the shaft sleeve 4, the upper part of the fixed shaft 3 is fixed with a disc-shaped upper pressure plate 6, and the upper pressure plate 6 A number of pin holes are opened on the side wall, and each of the pin holes is provided with a spring pin 2 for fixing a thin-walled highly brittle semiconductor component.

It should be noted that by designing the disc-shaped base 1 and opening several pin holes on the side wall of the base 1, it is convenient to install multiple spring pins 2, and through multiple spring pins 2 facing the inside of the base 1, the thin-walled The structurally highly brittle semiconductor components are clamped, which is convenient for spraying the inside of the semiconductor components; a through hole is opened in the bottom center of the base 1 and a corresponding bushing 4 is provided at the lower part for the fixed shaft 3 to pass through, which is convenient for fixing the shaft 3 Move up and down to realize the relative movement between the base 1 and the upper platen 6. A disc-shaped upper platen 6 is arranged on the upper part of the fixed shaft 3 and several pin holes are opened on the side wall of the upper platen 6, which facilitates the installation of multiple A spring pin 2, through a plurality of spring pins 2 facing the outside of the upper platen 6, clamps the thin-walled high-brittle semiconductor components, which is convenient for spraying the outside of the semiconductor components, and at the same time adjusts the position of the fixed shaft 3 The height of the upper platen 6, when spraying the inside of the semiconductor components, the upper platen 6 is raised to prevent the upper platen 6 from affecting the spraying, and when the semiconductor components need to be switched to the outside for spraying, the upper platen 6 down, from the clamping of the base 1 to the clamping of the lower platen, and then raise the upper platen 6 to prevent the base 1 from affecting the spraying. The bolt 5 fixes the fixed shaft 3 when the position of the upper platen 6 needs to be fixed, which ensures the stability during spraying.

It should be noted that, when fastening circular thin-walled semiconductor components with high brittleness, six spring pins 2 are evenly arranged for fixing; when fastening square-ring thin-walled high-brittle semiconductor components, four The spring pin 2 is fixed, and when fastening the polygonal thin-walled high-brittle semiconductor components, the corresponding spring pin 2 is set according to the side of the polygon to realize the fixation, and the spraying and fastening of ring parts of different shapes can be realized by setting the number of spring pins 2 For sheet-shaped thin-walled highly brittle semiconductor components, adjust the spring pins 2 of the upper platen 6 and the spring pins 2 of the base 1 to the same height to clamp the sheet-shaped thin-walled highly brittle semiconductor components.

As shown in Figure 6, the spring pin 2 in the present invention includes a housing 2-1, a spring 2-2 and a push rod 2-3 are sequentially installed in the housing 2-1, and the push rod 2-3 is far away from the housing 2-1. One end of 1 is provided with a top plate 2-4, the top plate 2-4 is tile-shaped, and the outside of the spring pin 2 is provided with a screw thread 2-5 matching with the pin hole.

It should be noted that by installing the spring 2-2 in the casing 2-1, the ejector rod 2-3 is elastically supported, and the ejector rod 2-3 is pressed by the tile-shaped top plate 2-4 during use, and after semiconductor components are placed Let go, and the spring pin 2 will automatically push against the semiconductor components. When the spring 2-2 is compressed, the semiconductor components will be clamped. The semiconductor components will be clamped by the force provided by the spring 2-2. The thread 2-5 that the pin hole cooperates is convenient for the spring pin 2 to be stably connected with the base 1 or the upper pressure plate 6, and it is also convenient to adjust the position of the spring pin 2 by rotating the spring pin 2 simultaneously.

As shown in Figure 1, a waist-shaped hole 1-1 corresponding to the spring pin 2 is provided on the base 1 of the present invention, and an I-shaped moving plate 1-2 is mounted in the waist-shaped hole 1-1, so that The moving plate 1-2 is provided with a baffle plate 1-3 matched with the top plate 2-4.

It should be noted that the baffles 1-3 fasten the spring pins 2 of the base 1 in a pressed state after the upper platen 6 is used to fix the semiconductor components, so as to prevent them from interfering with the workpiece spraying process.

It should be noted that the outer diameter of the ring of the upper platen 6 is 120 mm to 160 mm, the wall thickness of the side wall is 5 mm to 20 mm, the diameter of the fixed shaft 3 is 10 mm to 40 mm, and the length is 100 mm to 150 mm. The outer diameter is 250mm~400mm, the wall thickness of the side wall is 5mm~20mm, the diameter of the through hole is 10mm~40mm, the length of the sleeve 4 is 50mm~80mm, the length of the baffle 1-3 is 30mm~60mm, and the width is 5mm~10mm, height 30mm~60mm, outer diameter of spring pin 2 is 10mm~20mm, length 100mm~150mm, width of top plate 2-4 is 30mm~60mm, length of locking bolt 5 is 20mm~50mm.

Example 1

This embodiment includes the following steps:

Step 1. Degrease, decontaminate, polish and derust the glass circular thin-walled semiconductor components with high brittleness, then ultrasonically clean them with acetone, put them in a drying oven for drying, and then fix them on the pagoda-shaped elastic fastening On the device, the component to be processed is obtained; the diameter of the thin-walled highly brittle semiconductor component is 220mm, the height is 20mm, and the wall thickness is 5mm;

Step 2. Preheat the highly brittle semiconductor components in the component to be processed obtained in step 1 at 50°C with a spray gun, and then deposit a coating on the inner and outer walls to complete the performance improvement of the thin-walled highly brittle semiconductor components. ; The deposition uses the high-energy plasma melt-blown method to fully cover the spherical silicon carbide powder with a particle size of 10 μm to 45 μm and a mass purity greater than 99.99% on the inner and outer walls of the highly brittle semiconductor components; the high-energy plasma melt-blown method The medium spraying power is 40kW, the main air flow rate is 70L/min, the spraying distance is 220mm, the powder feeding rate is 12g/min, the sweeping speed of the auxiliary manipulator is 500mm/s, the angle between the spray gun and the spraying surface is 45°, pagoda-shaped elastic The rotation rate of the fastening device is 1300r/min; the deposition process is as follows: the outer surface, the inner surface, the inner surface, and the outer surface of the thin-walled highly brittle semiconductor components are sequentially deposited to complete one deposition cycle, and then the Thin-walled highly brittle semiconductor components are turned over 180° and then one deposition cycle is performed, the above process is repeated and the coating thickness is measured every 10 deposition cycles until the coating thickness reaches 5 μm and the deposition is stopped. The interval time is not less than 2 minutes; the temperature of the highly brittle semiconductor components during the deposition process does not exceed 80°C.

Fig. 6 is the actual picture of the high brittle semiconductor components of the annular thin-walled structure after depositing the coating in this embodiment, as can be seen from Fig. 6, the highly brittle semiconductor components of the annular thin-walled structure after the coating is deposited The coating deposited on the surface has uniform deposition, consistent color, no over-melting point particles, cracks and peeling, etc., and the coating deposition quality is good.

Fig. 7 is the coating cross-sectional topography figure of the annular thin-walled structure high brittle semiconductor component after depositing the coating in this embodiment, as can be seen from Fig. 7, the annular thin-walled structure after depositing the coating is high The coating structure of brittle semiconductor components is compact, with few microscopic defects such as pores and cracks, the thickness is 5 μm, the uniformity error is less than 5%, and the coating deposition quality is good.

After testing, the coating of this embodiment completely covers the surface of the thin-walled highly brittle semiconductor component. The color of the coating is uniform without defects such as cracks and thin layers. The thickness of the coating is 5 μm, and the uniformity error is less than 5%, the surface roughness is 1.5μm, and the quality of the deposited coating is good.

Example 2

This embodiment includes the following steps:

Step 1. Degrease, decontaminate, polish and derust the soda-lime glass-shaped thin-walled high-brittle semiconductor components, then ultrasonically clean them with acetone, put them in a drying oven for drying, and then fix them on the pagoda-shaped elastic On the fastening device, the component to be processed is obtained; the length of the thin-walled highly brittle semiconductor component is 120mm, the width is 80mm, and the thickness is 3mm;

Step 2. Preheat the highly brittle semiconductor components in the component to be processed obtained in step 1 at 50°C with a spray gun, and then deposit a coating on the inner and outer walls to complete the performance improvement of the thin-walled highly brittle semiconductor components. ; The deposition uses the high-energy plasma melt-blown method to fully cover the spherical silicon powder with a particle size of 10 μm to 60 μm and a mass purity greater than 99.99% on the inner and outer walls of the highly brittle semiconductor components; the high-energy plasma melt-blown method The medium spraying power is 35kW, the main air flow rate is 50L/min, the spraying distance is 150mm, the powder feeding rate is 10g/min, the sweeping speed of the auxiliary manipulator is 300mm/s, the angle between the spray gun and the spraying surface is 30°, pagoda-shaped elasticity The rotation rate of the fastening device is 1000r/min; the deposition process is as follows: the outer surface, the inner surface, the inner surface, and the outer surface of the thin-walled highly brittle semiconductor component are sequentially deposited to complete one deposition cycle, and then the Thin-walled highly brittle semiconductor components are turned over 180° and then one deposition cycle is performed, the above process is repeated and the coating thickness is measured every 10 deposition cycles until the coating thickness reaches 20 μm and then the deposition is stopped. The interval time is not less than 2 minutes; the temperature of the highly brittle semiconductor components during the deposition process does not exceed 80°C.

Fig. 8 is the physical figure of the high brittle semiconductor component of the square thin-walled structure after depositing the coating in this embodiment, and Fig. 9 is the enlarged view of the A place of Fig. 8, as can be seen from Fig. 8 and Fig. 9, the deposited coating The thin-walled square plate-shaped semiconductor components with high brittleness after the layer are intact, without local fragmentation, and the coating is deposited uniformly, with consistent color, and no over-melting point particles, cracks, and peeling off.

Fig. 10 is the cross-sectional topography of the coating of the square sheet-shaped thin-walled structure highly brittle semiconductor components after the coating is deposited in this embodiment. As can be seen from Fig. 10, the square-shaped thin-walled structure after the deposition coating is highly The coating structure of brittle semiconductor components is compact, with few microscopic defects such as pores and cracks, the thickness is 20 μm, the uniformity error is less than 1%, and the coating deposition quality is good.

After testing, the coating of this embodiment completely covers the surface of the thin-walled highly brittle semiconductor component. The color of the coating is uniform without defects such as cracks and thin layers. The thickness of the coating is 20 μm, and the uniformity error is less than 1%, the surface roughness is 1.8μm, and the quality of the deposited coating is good.

Example 3

This embodiment includes the following steps:

Step 1. Degrease, decontaminate, polish and derust the high-brittle semi-conductor components with a circular thin-walled structure made of quartz, then use acetone to ultrasonically clean them, put them in a drying oven for drying, and then fix them on the pagoda-shaped elastic fastening On the device, the component to be processed is obtained; the diameter of the thin-walled highly brittle semiconductor component is 75mm, the height is 25mm, and the wall thickness is 3mm;

Step 2. Preheat the highly brittle semiconductor components in the component to be processed obtained in step 1 at 80°C with a spray gun, and then deposit a coating on the inner and outer walls to complete the performance improvement of the thin-walled highly brittle semiconductor components. ; The deposition uses the high-energy plasma melt-blown method to fully cover the spherical silicon powder with a particle size of 10 μm to 60 μm and a mass purity greater than 99.99% on the inner and outer walls of the highly brittle semiconductor components; the high-energy plasma melt-blown method The medium spraying power is 50kW, the main air flow rate is 100L/min, the spraying distance is 250mm, the powder feeding rate is 15g/min, the sweeping speed of the auxiliary manipulator is 500mm/s, the angle between the spray gun and the spraying surface is 60°, pagoda-shaped elastic The rotation rate of the fastening device is 1500r/min; the deposition process is as follows: the outer surface, the inner surface, the inner surface, and the outer surface of the thin-walled highly brittle semiconductor component are deposited sequentially to complete one deposition cycle, and then the Thin-walled highly brittle semiconductor components are turned over 180° and then one deposition cycle is performed, the above process is repeated and the coating thickness is measured every 10 deposition cycles until the coating thickness reaches 200 μm and the deposition is stopped. The interval time is not less than 2 minutes; the temperature of the highly brittle semiconductor components during the deposition process does not exceed 80°C.

After testing, the coating of this embodiment completely covers the surface of the thin-walled highly brittle semiconductor component. The color of the coating is uniform without defects such as cracks and thin layers. The thickness of the coating is 200 μm, and the uniformity error is less than 3%, the surface roughness is 1.1 μm, and the quality of the deposited coating is good.

Example 4

This embodiment includes the following steps:

Step 1. Degrease, decontaminate, polish and derust the glass circular thin-walled semiconductor components with high brittleness, then ultrasonically clean them with acetone, put them in a drying oven for drying, and then fix them on the pagoda-shaped elastic fastening On the device, the component to be processed is obtained; the diameter of the thin-walled highly brittle semiconductor component is 220mm, the height is 30mm, and the wall thickness is 5mm;

Step 2. Preheat the highly brittle semiconductor components in the component to be processed obtained in step 1 at 70°C with a spray gun, and then deposit a coating on the inner and outer walls to complete the performance improvement of the thin-walled highly brittle semiconductor components. ; The deposition uses the high-energy plasma melt-blown method to fully cover the spherical silicon powder with a particle size of 10 μm to 60 μm and a mass purity greater than 99.99% on the inner and outer walls of the highly brittle semiconductor components; the high-energy plasma melt-blown method The medium spraying power is 45kW, the main air flow rate is 80L/min, the spraying distance is 200mm, the powder feeding rate is 12g/min, the sweeping speed of the auxiliary manipulator is 400mm/s, the angle between the spray gun and the spraying surface is 45°, pagoda-shaped elastic The rotation rate of the fastening device is 1200r/min; the deposition process is as follows: the outer surface, the inner surface, the inner surface, and the outer surface of the thin-walled highly brittle semiconductor component are sequentially deposited to complete one deposition cycle, and then the Thin-walled highly brittle semiconductor components are turned over 180° and then one deposition cycle is performed, the above process is repeated and the coating thickness is measured every 10 deposition cycles until the coating thickness reaches 70 μm and then the deposition is stopped. The interval time is not less than 2 minutes; the temperature of the highly brittle semiconductor components during the deposition process does not exceed 80°C.

After testing, the coating of this embodiment completely covers the surface of the thin-walled highly brittle semiconductor component. The color of the coating is uniform without defects such as cracks and thin layers. The thickness of the coating is 70 μm, and the uniformity error is less than 5%, the surface roughness is 1.5μm, and the quality of the deposited coating is good.

Example 5

The difference between this embodiment and Embodiment 4 lies in that the diameter of the thin-walled highly brittle semiconductor component is 150 mm, the height is 10 mm, and the wall thickness is 0.5 mm.

Example 6

The difference between this embodiment and Embodiment 4 lies in that the diameter of the thin-walled highly brittle semiconductor component is 350 mm, the height is 50 mm, and the wall thickness is 5 mm.

Example 7

The difference between this embodiment and Embodiment 4 lies in that the diameter of the thin-walled highly brittle semiconductor component is 250 mm, the height is 30 mm, and the wall thickness is 3 mm.

Example 8

The difference between this embodiment and Embodiment 4 is that the materials of the ring-shaped thin-walled highly brittle semiconductor components and the functional powder raw materials are all pure silicon with a mass purity greater than 99.99%.

Example 9

The difference between this embodiment and Embodiment 4 lies in that the materials of the ring-shaped thin-walled highly brittle semiconductor components and the functional powder raw materials are gallium nitride with a mass purity greater than 99.99%.

Example 10

The difference between this embodiment and Embodiment 4 is that the materials of the ring-shaped thin-walled highly brittle semiconductor components and the functional powder raw materials are silicon nitride with a mass purity greater than 99.99%.

Example 11

The difference between this embodiment and Embodiment 4 is that the material of the ring-shaped thin-walled highly brittle semiconductor component and the functional powder raw material is zinc oxide with a mass purity greater than 99.99%.

Example 12

The difference between this embodiment and Embodiment 4 is that the materials of the ring-shaped thin-walled highly brittle semiconductor components and the functional powder raw materials are all diamonds with a mass purity greater than 99.99%.

Example 13

The difference between this embodiment and Embodiment 4 is that the materials of the ring-shaped thin-walled highly brittle semiconductor components and the functional powder raw materials are aluminum nitride with a mass purity greater than 99.99%.

Example 14

The difference between this embodiment and Embodiment 4 is that the materials of the ring-shaped thin-walled highly brittle semiconductor components and the functional powder raw materials are silicon carbide with a mass purity greater than 99.99%.

Example 15

The difference between this embodiment and Embodiment 4 lies in that the thin-walled highly brittle semiconductor component is in the shape of a square plate.

Example 16

The difference between this embodiment and Embodiment 4 is that the thin-walled highly brittle semiconductor component is hexagonal.

The above descriptions are only preferred embodiments of the present invention, and do not limit the present invention in any way. All simple modifications, changes and equivalent changes made to the above embodiments according to the technical essence of the invention still belong to the protection scope of the technical solution of the invention.

Claims (10)

1. The method for strengthening the inner and outer surfaces of the thin-wall structure high-brittleness semiconductor component is characterized by comprising the following steps:

fixing a thin-wall structure high-brittleness semiconductor component on a pagoda-type elastic fastening device to obtain a component to be processed;

step two, depositing a coating on the inner wall and the outer wall of the high-brittleness semiconductor component in the component to be processed obtained in the step one, so as to improve the performance of the high-brittleness semiconductor component with the thin-wall structure; the deposition utilizes a high-energy plasma melt blowing method to fully cover the functional powder raw material and deposit the functional powder raw material on the inner wall and the outer wall of the high-brittleness semiconductor component.

2. The method for strengthening the inner and outer surfaces of the thin-wall structure high-brittleness semiconductor component according to claim 1, characterized in that in the first step, the pagoda-shaped elastic fastening device comprises a disc-shaped base (1), a plurality of pin holes are formed in the side wall of the base (1), a spring pin (2) for fixing the thin-wall structure high-brittleness semiconductor component is arranged in each pin hole, a through hole is formed in the center of the bottom of the base (1), a fixing shaft (3) is inserted into the through hole, a shaft sleeve (4) for the fixing shaft (3) to penetrate through is further arranged at the lower portion of the base (1), a locking bolt (5) for fixing the fixing shaft (3) is arranged on the shaft sleeve (4), a disc-shaped upper pressing plate (6) is fixed on the upper portion of the fixing shaft (3), a plurality of pin holes are formed in the side wall of the upper pressing plate (6), and the spring pin (2) for fixing the thin-wall structure high-brittleness semiconductor component is arranged in each pin hole.

3. The method for strengthening the inner and outer surfaces of the thin-wall structure high-brittleness semiconductor component according to claim 2, wherein the spring pin (2) comprises a shell (2-1), a spring (2-2) and a push rod (2-3) are sequentially installed in the shell (2-1), a top plate (2-4) is arranged at one end, far away from the shell (2-1), of the push rod (2-3), the top plate (2-4) is tile-shaped, and threads (2-5) matched with the pin holes are arranged outside the spring pin (2).

4. The method for strengthening the inner and outer surfaces of the thin-wall structure high-brittleness semiconductor component according to claim 3, wherein the base (1) is provided with a waist-shaped hole (1-1) corresponding to the spring pin (2), the waist-shaped hole (1-1) is internally provided with an I-shaped movable plate (1-2), and the movable plate (1-2) is provided with a baffle plate (1-3) matched with the top plate (2-4).

5. The method for strengthening the inner and outer surfaces of a thin-wall-structure high-brittleness semiconductor component as set forth in claim 1, wherein the materials of the thin-wall-structure high-brittleness semiconductor component in the first step and the functional powder raw material in the second step are both high-brittleness materials, and the high-brittleness materials are glass, quartz, silicon carbide, silicon, gallium nitride, silicon nitride, zinc oxide, diamond, and aluminum nitride.

6. The method for strengthening the inner and outer surfaces of a thin-wall structure high-brittleness semiconductor element as set forth in claim 1, wherein in the step one, the thin-wall structure high-brittleness semiconductor element is in a ring shape or a sheet shape.

7. The method for strengthening the inner and outer surfaces of the thin-wall structure high-brittleness semiconductor component according to claim 1, wherein in the second step, spraying power in the high-energy plasma melt spraying method is 35 kW-50 kW, main air flow is 50L/min-100L/min, spraying distance is 150 mm-250 mm, powder feeding rate is 10 g/min-15 g/min, sweeping speed of an auxiliary mechanical arm is 300 mm/s-500 mm/s, a spray gun forms an included angle of 30-60 degrees with the spraying surface, and rotation speed of the pagoda type elastic fastening device is 1000 r/min-1500 r/min.

8. The method for strengthening the inner and outer surfaces of a thin-wall structured highly brittle semiconductor component as claimed in claim 1, wherein the depositing step in the second step comprises: sequentially depositing the outer surface, the inner surface and the outer surface of the thin-wall structure high-brittleness semiconductor component to complete 1 deposition cycle, overturning the thin-wall structure high-brittleness semiconductor component by 180 degrees, then carrying out 1 deposition cycle, repeating the processes, measuring the thickness of the coating in every 10 deposition cycles, stopping deposition until the thickness of the coating reaches the requirement, and keeping the interval time between the two deposition cycles at least 2 minutes.

9. The method for strengthening the inner and outer surfaces of the thin-wall structure high-brittleness semiconductor element as set forth in claim 1, wherein the high-brittleness semiconductor element is preheated before the deposition in the second step, the preheating temperature is 50-80 ℃, and the temperature of the high-brittleness semiconductor element in the deposition process is not more than 80 ℃.

10. The method for strengthening the inner and outer surfaces of the thin-wall structure high-brittleness semiconductor component as set forth in claim 1, wherein in the second step, the coating completely covers the surface of the thin-wall structure high-brittleness semiconductor component, the coating has uniform color and no defects such as cracks and thin layers, the thickness of the coating is 5 μm-200 μm, the uniformity error is lower than 5%, and the surface roughness is lower than 2 μm.

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