CN116130384B - Semiconductor wafer film pasting technology - Google Patents
Semiconductor wafer film pasting technology Download PDFInfo
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- CN116130384B CN116130384B CN202211622603.6A CN202211622603A CN116130384B CN 116130384 B CN116130384 B CN 116130384B CN 202211622603 A CN202211622603 A CN 202211622603A CN 116130384 B CN116130384 B CN 116130384B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000005516 engineering process Methods 0.000 title description 3
- 238000003825 pressing Methods 0.000 claims abstract description 82
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 23
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 238000013459 approach Methods 0.000 claims abstract description 4
- 238000001179 sorption measurement Methods 0.000 claims description 10
- 230000009471 action Effects 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000005429 filling process Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 5
- 239000007788 liquid Substances 0.000 abstract description 7
- 238000000462 isostatic pressing Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 63
- 230000000694 effects Effects 0.000 description 4
- 238000013329 compounding Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a semiconductor wafer film pasting process, which comprises the following steps: filling medium into the pressing layer and the holding cavity of the upper platform through the connecting pipe; heating the upper platform through a heating device; placing a fixed disc at the outer circle of a limiting device of a lower platform, placing a wafer at the inner circle of the limiting device of the lower platform, and flatly covering the surfaces of the wafer and the fixed disc with a film to be applied; starting the telescopic mechanism to push the upper platform to approach the lower platform, wherein the pressing layer covers the surfaces of the wafer and the fixed disc; setting the attaching residence time of the pressing layer and the wafer, and lifting the telescopic mechanism. The invention adopts a hemispherical or semi-ellipsoidal pressing layer structure formed by a uniquely designed pressing medium, and the liquid medium in the pressing layer structure can form an isostatic pressing mode, so that the pressing force can be gradually expanded to the periphery after the bottom is contacted with the center of a wafer, and the stress of a film and the surface of the wafer can be more balanced.
Description
Technical Field
The invention relates to the technical field of semiconductor wafer processing, in particular to a semiconductor wafer film pasting technology.
Background
A semiconductor wafer (hereinafter, simply referred to as a "wafer") is a wafer in which a plurality of devices are formed, and then the wafer is cut into a plurality of devices by a backgrinding process. Because the wafer is polished very thin and brittle, it is necessary to perform dicing after coating during processing.
There are two common types of wafer coating in the prior art: firstly, rolling a pressing roller on the surface of a base from one side to the other side, wherein when the pressing roller rolls on a wafer on the base, the problem that the bonding position of a substrate is deviated along the rolling direction exists, and although the wafer is fixed at present, the problems that uneven longitudinal and transverse tensile force, wrinkles and the like of a film are generated when the film is rolled still exist, and when the wafer is cut into very small sizes, the wafer is easy to damage; the second is a mode of pressing down the center, for example, in chinese patent 200710195570.0, which adopts a generally hemispherical pressing member (such as rubber) to press down toward the center of the base, the hemispherical pressing member in the pressing down process gradually increases on the surface of the truncated sphere contacting the base, and the pressure is relatively balanced on the circumference of the truncated sphere at a certain moment, so that the problems of movement of the wafer and uneven longitudinal and transverse tension of the film can be effectively reduced. However, this process also has certain drawbacks: in the pressing process of the approximately hemispherical pressing component, because the vertical direction of the center is larger than the outer side, the deformation is also larger when the pressing component is pressed, and the elastic force (reaction force) formed by the pressing is also larger, the outward compound pressure of the center position of the pressing component is sequentially reduced (the outward attaching force of the center is gradually reduced), so that the wafer is easily crushed at the center position of the pressing component particularly when the wafer with the larger size is subjected to compound film, and the compound force of the film close to the outer circle part is insufficient. And compared with the first press roller type compounding scheme, the scheme cannot guarantee a good compounding effect when the working environment temperature difference is large (when the temperature is low, the viscosity on the film is lower, the wafer compounding film can fall off, and the press roller type can adopt a press roller with a heating function).
In view of the above, a semiconductor wafer film-attaching process is designed.
Disclosure of Invention
(one) solving the technical problems
In order to solve the problems in the background art, the invention designs a semiconductor wafer film pasting process, which can prevent the deviation of wafer positions when workpieces such as a semiconductor wafer and films are damaged, reduce the uneven tension generated by wafer film pasting, better meet the process requirements of film pasting under common different working temperature environments and improve the operation quality of wafer film pasting.
(II) technical scheme
In order to achieve the above purpose, the present invention provides the following technical solutions:
the semiconductor wafer film pasting process is characterized by comprising the following steps of:
s1, filling media into the pressing layer and the accommodating cavity of the upper platform through a connecting pipe, wherein the pressing layer protrudes downwards in the media filling process, after a hemispherical or semi-ellipsoidal shape is formed, a valve on the connecting pipe is closed, and the pressure condition of the media in the pressing layer is measured through a hydraulic appearance;
s2, heating the upper platform through a heating device according to the working environment temperature and the size of the wafer, wherein the heating temperature is in a selectable range of 0-90 degrees, respectively measuring the temperature of the pressing layer and the internal medium in the pressing layer according to a thermometer and an infrared thermometer, and then adjusting the heating device to set heating requirements;
s3, placing the fixed disc at the outer circle of the limiting device of the lower platform, placing the wafer at the inner circle of the limiting device of the lower platform, wherein the lower platform is provided with a vacuum adsorption device, starting the vacuum adsorption device, fixing the wafer at the inner circle of the limiting device, and flatly covering the surfaces of the wafer and the fixed disc with the film to be applied;
s4, starting a telescopic mechanism, pushing the upper platform to approach the lower platform, enabling the top of the pressing layer to contact the center position of the wafer, gradually expanding the contact surface area of the pressing layer and the wafer along with the continuous downward pressing of the pressing layer, and controlling the downward pressing stroke of the telescopic mechanism according to the pressure value change condition of the hydraulic gauge until the set pressure requirement is met, wherein the pressing layer covers the surfaces of the wafer and the fixed disc finally;
s5, setting the attaching residence time of the pressing layer and the wafer according to the working environment temperature, the size of the wafer and the pressure requirement, lifting the telescopic mechanism to finish one-time film pasting work, and fixing the wafer, the film and the fixing disc into a whole at the moment so as to facilitate the cutting of the subsequent wafer;
s6, cutting off redundant films at the edge of the surface of the fixed disc by using a rotary cutter, closing the vacuum adsorption device, and taking out the wafer, the films and the fixed disc from the limiting device together, so that repeated film pasting work can be performed.
As the preferable scheme of the last step, the upper end of the upper platform is fixedly connected with the telescopic mechanism and used for realizing the up-down pressing action of the upper platform, and the pressing layer is fixed at the lower end of the upper platform in a sealing way through the fixing ring.
As a preferable scheme of the last step, the telescopic mechanism is a hydraulic or pneumatic or connecting rod mechanism.
As the preferable scheme of the last step, the connecting pipe, the thermometer pipe and the hydraulic gauge all penetrate through the upper platform and are communicated with the pressing layer and the containing cavity formed by the upper platform, and the connecting pipe is provided with a valve for filling medium into the pressing layer.
As a preferable mode of the above step, the heating mode of the heating device is a resistance heating mode or a low-frequency induction heating mode.
As the preferable scheme of the last step, the limiting device is a step-shaped cylinder, and the fixed disc is sleeved on the outer circle of the limiting device through the inner circle, so that the positioning effect is achieved.
(III) beneficial effects
The invention provides a semiconductor wafer film sticking process, which has the following beneficial effects:
1. the invention adopts a hemispherical or semi-ellipsoidal pressing layer structure formed by a uniquely designed pressing medium, and the liquid medium in the pressing layer structure can form an isostatic pressing mode, so that the pressing force can be gradually expanded to the periphery after the bottom is contacted with the center of a wafer, and the stress of a film and the surface of the wafer can be more balanced.
2. In the pressing process, the hydraulic gauge can observe the internal pressure of the medium in real time, thereby being convenient for adjusting the set pressure and recording the production state.
3. According to the invention, under the environment with lower temperature, the upper platform and the medium can be heated by the heating device, so that the adhesion strength of the film can be improved, bad bubbles can be reduced, and the tension difference of the film can be eliminated.
4. In the pressing process, the temperature of the medium can be measured by the thermometer and the infrared thermometer, the surface temperature of the pressing layer is measured externally, and the two temperatures are detected in real time, so that more accurate temperature setting can be realized, and the laminating effect is convenient to improve.
5. The product of the invention has simple structure and is convenient for processing, manufacturing, popularization and use.
Drawings
FIG. 1 is a front view of the present invention;
FIG. 2 is a cross-sectional view of the present invention;
FIG. 3 is a diagram showing a contact wafer state of a pressing layer according to the present invention;
FIG. 4 is a press-on wafer state diagram of the present invention;
fig. 5 is a view in the direction a of fig. 1 of the present invention.
Wherein, 1, a telescopic mechanism, 2, a thermometer, 3, a connecting pipe, 4, an upper platform, 5, an infrared temperature detector, 6, a fixed ring, 7, a lower platform, 8, a wafer, 9, a pressing layer, 10, a hydraulic gauge, 11, a heating device, 12, a medium, 13, a limiting device, 14 and a fixed disc.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one:
as shown in fig. 1-5, the upper end of the upper platform 4 is fixedly connected with the telescopic mechanism 1, so as to realize the up-down pressing action of the upper platform 4, and the telescopic mechanism 1 can adopt hydraulic pressure, pneumatic pressure, a link mechanism and the like to complete lifting action.
The pressing layer 9 is fixed on the lower surface of the upper platform 4 in a sealing way through the fixing ring 6, a heating device 11 is arranged on the upper platform 4 right above the pressing layer 9, and the heating device 11 can adopt a resistance heating or low-frequency induction heating mode.
The lower platform 7 is arranged right below the pressing layer 9, the lower platform 7 is used for bearing and fixing the wafer 8 and the like, the pressing layer 9 can be made of a rubber material with strong flexibility, heat resistance and oil resistance, and the lower surface of the pressing layer 9 needs to ensure higher surface flatness when stretching.
The lower platform 7 is provided with a limiting device 13, the limiting device 13 is a step-shaped cylinder, and the fixed disk 14 can be sleeved on the outer circle of the limiting device 13 through the inner circle to play a role in positioning; the lower platform 7 is provided with a vacuum adsorption device (not marked in the prior art), and after the vacuum adsorption device is started, the wafer 8 can be adsorbed at the inner circle of the limiting device 13 of the lower platform 7, so that the wafer 8 is prevented from shifting during film pasting.
The connecting pipe 3, the thermometer 2 and the bent pipe of the hydraulic meter 10 respectively penetrate through the upper platform 4 and are communicated with the holding cavity formed by the pressing layer 9 and the upper platform 4, and a valve (not marked in the figure) is arranged on the connecting pipe 3, so that the pressing layer 9 is conveniently filled with a medium 12, and the medium 12 is a liquid medium and can be common pure water or oil which has no corrosion resistance, is in a normal-temperature liquid state and meets the requirements of stability and the like.
Embodiment two:
s1, after a proper amount of medium 12 is filled into the pressing layer 9 and the accommodating cavity of the upper platform 4 through the connecting pipe 3, a valve (not marked in the figure) on the connecting pipe 3 is closed, after the medium 12 is filled, the pressing layer 9 protrudes downwards to form a semi-sphere or semi-ellipsoid-like shape, the pressure condition of the medium 12 in the pressing layer 9 can be observed through the hydraulic gauge 10 in the working process, the pressure range is set to 0-8 bar, and the corresponding pressure range is selected according to the sizes of different wafers 8.
S2, heating the upper platform 4 through the heating device 11 according to factors such as the working environment temperature and the wafer size, wherein the heating temperature can be selected to be 0-90 degrees. The temperature of the pressing layer 9 and the temperature of the internal medium 12 inside the pressing layer are respectively measured according to the thermometer 2 and the infrared thermometer 5, and the heating device 11 is adjusted to set the heating requirement.
S3, placing the fixing disc 14 at the outer circle of the limiting device 13 of the lower platform 7, placing the wafer 8 at the inner circle of the limiting device 13 of the lower platform 7, carrying out vacuum adsorption on the lower platform 7 by using a vacuum adsorption device (not marked in the figure), starting the vacuum adsorption device, fixing the wafer 8 at the inner circle of the limiting device 13, and flatly covering the surfaces of the wafer 8 and the fixing disc 14 with films (not marked in the figure) to be applied. The limiting device 13 is a step-shaped cylinder, and the fixed disc 14 can be sleeved on the outer circle of the limiting device 13 through the inner circle, so that a positioning effect is achieved.
S4, starting the telescopic mechanism 1 to push the upper platform 4 to approach the lower platform 7, enabling the top of the pressing layer 9 to contact the center position of the wafer 8, gradually expanding the contact surface area of the pressing layer 9 and the wafer 8 along with the continuous downward pressing of the pressing layer 9, and enabling the internal pressure of liquid in the pressing layer 9 to be equal and to be pressed on the wafer surface, wherein the internal pressure of the liquid is equal, and accordingly isostatic pressure is formed. According to the pressure value change condition of the hydraulic gauge 10, the pressing stroke of the telescopic mechanism 1 is controlled until the set pressure requirement is met, and finally the pressing layer 9 covers the surfaces of the wafer 8 and the fixed disc 14. The process can conduct the pressure relatively uniformly from the center of the wafer 8 to the outer circle direction, and the film attached to the wafer 8 can well eliminate bubbles and tension difference between the attaching surfaces under the action of the heated medium 12; the liquid medium 12 in the pressing layer 9 is in an isostatic pressure state, so that the pressure between the whole surfaces of the wafers 8 is in an equilibrium state, and the wafers 8 which are thin and brittle can be prevented from being damaged by uneven stress.
S5, setting the attaching residence time of the pressing layer 9 and the wafer 8 according to the requirements of the working environment temperature, the size, the pressure and the like of the wafer 8, and then lifting the telescopic mechanism 1 to finish one-time film pasting work. At this time, the wafer 8, the film (not shown) and the fixing plate 14 are fixed together, so that the subsequent dicing of the wafer is facilitated.
S6, cutting off redundant films at the edge of the surface of the fixed disk 14 by using a rotary cutter. The vacuum suction device (not shown) is turned off, and the wafer 8, the film (not shown) and the fixing plate 14 are taken out from the limiting device 13 together, so that the repeated film pasting operation can be performed.
The design purpose is achieved.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element. Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents. In summary, the present invention achieves the intended aim.
Claims (6)
1. The semiconductor wafer film pasting process is characterized by comprising the following steps of:
S 1 filling medium (12) into the pressing layer (9) and the accommodating cavity of the upper platform (4) through the connecting pipe (3), wherein the pressing layer (9) protrudes downwards in the medium (12) filling process, after a hemispherical or semi-ellipsoidal shape is formed, a valve on the connecting pipe (3) is closed, and the pressure condition of the medium (12) in the pressing layer (9) is observed through the hydraulic gauge (10);
S 2 heating the upper platform (4) by a heating device (11) according to the working environment temperature and the size of the wafer (8), wherein the heating temperature range is 0-90 ℃, respectively measuring the temperature of the pressing layer (9) and the internal medium (12) in the pressing layer according to the thermometer (2) and the infrared thermometer (5), and then adjusting the heating device (11) to set heating requirements;
S 3 placing a fixed disc (14) at the outer circle of a limiting device (13) of a lower platform (7), placing a wafer (8) at the inner circle of the limiting device (13) of the lower platform (7), starting the vacuum adsorption device by the lower platform (7), fixing the wafer (8) at the inner circle of the limiting device (13), and flatly covering the surfaces of the wafer (8) and the fixed disc (14) with films to be applied;
S 4 starting the telescopic mechanism (1), pushing the upper platform (4) to approach the lower platform (7), enabling the top of the pressing layer (9) to contact the center position of the wafer (8) firstly, gradually expanding the contact surface area of the pressing layer (9) and the wafer (8) along with the continuous downward pressing of the pressing layer (9), and controlling the downward pressing stroke of the telescopic mechanism (1) according to the pressure value change condition of the hydraulic gauge (10) until the set pressure requirement is met, wherein the surface of the wafer (8) and the surface of the fixed disc (14) are covered by the pressing layer (9) finally;
S 5 setting the attaching residence time of the pressing layer (9) and the wafer (8) according to the working environment temperature, the size of the wafer (8) and the pressure requirement, and then lifting the telescopic mechanism (1) to finish one-time film pasting operation, wherein the wafer (8), the film and the fixing disc (14) are fixed into a whole at the moment, so that the subsequent cutting of the wafer is facilitated;
S 6 and cutting off redundant films at the edge of the surface of the fixed disc (14) by adopting a rotary cutter, closing the vacuum adsorption device, taking out the wafer (8), the films and the fixed disc (14) from the limiting device (13) together, and then performing repeated film pasting work.
2. The semiconductor wafer lamination process according to claim 1, wherein: the upper end of the upper platform (4) is fixedly connected with the telescopic mechanism (1) and used for realizing the up-down pressing action of the upper platform (4), and the pressing layer (9) is fixed at the lower end of the upper platform (4) in a sealing way through the fixing ring (6).
3. A semiconductor wafer lamination process according to claim 1 or 2, wherein: the telescopic mechanism (1) is a hydraulic or pneumatic or connecting rod mechanism.
4. The semiconductor wafer lamination process according to claim 1, wherein: the connecting pipe (3), the thermometer (2) and the hydraulic gauge (10) are communicated with the pressing layer (9) and the containing cavity formed by the upper platform (4) through the upper platform (4), and the connecting pipe (3) is provided with a valve for filling medium (12) in the pressing layer (9).
5. The semiconductor wafer lamination process according to claim 1, wherein: the heating mode of the heating device (11) is a resistance heating mode or a low-frequency induction heating mode.
6. The semiconductor wafer lamination process according to claim 1, wherein: the limiting device (13) is a step-shaped cylinder, and the fixed disc (14) is sleeved on the outer circle of the limiting device (13) through the inner circle to play a role in positioning.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211622603.6A CN116130384B (en) | 2022-12-16 | 2022-12-16 | Semiconductor wafer film pasting technology |
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| CN202211622603.6A CN116130384B (en) | 2022-12-16 | 2022-12-16 | Semiconductor wafer film pasting technology |
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| CN116130384A CN116130384A (en) | 2023-05-16 |
| CN116130384B true CN116130384B (en) | 2023-10-24 |
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| CN117253825B (en) * | 2023-11-13 | 2024-04-19 | 江苏星辉半导体有限公司 | Wafer film sticking machine for semiconductor device |
| CN118232131B (en) * | 2024-05-23 | 2024-09-17 | 中熵科技(徐州)有限公司 | Semiconductor electrothermal film wiring device |
| CN119225114B (en) * | 2024-12-03 | 2025-02-25 | 江苏快克芯装备科技有限公司 | Wafer laminating device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001210701A (en) * | 2000-01-24 | 2001-08-03 | Hitachi Ltd | Method and apparatus for attaching film for protecting semiconductor wafer |
| JP2003300255A (en) * | 2002-04-09 | 2003-10-21 | M B K Micro Tec:Kk | Film sticking method, fixture for sticking film, and film sticking apparatus |
| CN101197254A (en) * | 2006-12-06 | 2008-06-11 | 日东电工株式会社 | Method for laminating substrate and apparatus using the method |
| CN102082078A (en) * | 2010-10-22 | 2011-06-01 | 上海技美电子科技有限公司 | Method and device suitable for laminating film for ultrathin wafer |
| JP2013232582A (en) * | 2012-05-01 | 2013-11-14 | Nitto Denko Corp | Method of applying adhesive tape and adhesive tape applying apparatus |
| CN113871340A (en) * | 2021-09-27 | 2021-12-31 | 东莞市译码半导体有限公司 | Novel wafer film pasting process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10052293A1 (en) * | 2000-10-20 | 2002-04-25 | B L E Lab Equipment Gmbh | Method for depositing a thin-walled, flat wafer substrate onto a mounting carrier with a level protective layer like wax brings the substrate into contact with the protective layer through making a gap and arching. |
-
2022
- 2022-12-16 CN CN202211622603.6A patent/CN116130384B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001210701A (en) * | 2000-01-24 | 2001-08-03 | Hitachi Ltd | Method and apparatus for attaching film for protecting semiconductor wafer |
| JP2003300255A (en) * | 2002-04-09 | 2003-10-21 | M B K Micro Tec:Kk | Film sticking method, fixture for sticking film, and film sticking apparatus |
| CN101197254A (en) * | 2006-12-06 | 2008-06-11 | 日东电工株式会社 | Method for laminating substrate and apparatus using the method |
| CN102082078A (en) * | 2010-10-22 | 2011-06-01 | 上海技美电子科技有限公司 | Method and device suitable for laminating film for ultrathin wafer |
| JP2013232582A (en) * | 2012-05-01 | 2013-11-14 | Nitto Denko Corp | Method of applying adhesive tape and adhesive tape applying apparatus |
| CN113871340A (en) * | 2021-09-27 | 2021-12-31 | 东莞市译码半导体有限公司 | Novel wafer film pasting process |
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| CN116130384A (en) | 2023-05-16 |
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