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CN116092986B - A high-precision wafer chemical liquid etching device - Google Patents

A high-precision wafer chemical liquid etching device Download PDF

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CN116092986B
CN116092986B CN202310388003.6A CN202310388003A CN116092986B CN 116092986 B CN116092986 B CN 116092986B CN 202310388003 A CN202310388003 A CN 202310388003A CN 116092986 B CN116092986 B CN 116092986B
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wafer
liquid tank
plate
etching
liquid
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CN116092986A (en
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张琪
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New Yidong Beijing Technology Co ltd
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Fujian Anxin Semiconductor Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

The invention belongs to the technical field of wafer etching, and particularly relates to a high-precision wafer chemical liquid etching device, which structurally comprises a first positioning driver; the second positioning driver is fixedly connected with the output shaft of the first positioning driver; the first rotary driver is fixedly connected with the output shaft of the second positioning driver; the invention has the advantages that the etching liquid is uniformly sprayed out of the linear through holes, the whole impact force and the contact quantity are uniform, and the efficiency and the precision are high; the etching reactant can be directly removed and cannot be retained at the wafer main body; the grooves at the top ends of the groove plates form a liquid retaining space, so that the wafer main body can be soaked in etching liquid, the utilization rate is improved, and the etching efficiency is further improved; the cleaning liquid is sprayed upwards at the spray head to clean the wafer main body, so that excessive etching is reduced, the precision is improved, and the structure is simple and convenient; the spray washing mode is adopted, so that the strength is high, the efficiency is high, and the etching reactant is further ensured to be washed out.

Description

一种高精度晶圆化学液蚀刻装置A high-precision wafer chemical liquid etching device

技术领域technical field

本发明属于晶圆蚀刻技术领域,特别涉及一种高精度晶圆化学液蚀刻装置。The invention belongs to the technical field of wafer etching, in particular to a high-precision wafer chemical liquid etching device.

背景技术Background technique

光刻的原理一般是在晶圆表面覆盖一层具有高度光敏感性光刻胶,再用光线(一般是紫外光、深紫外光、极紫外光)透过掩模照射在晶圆表面,被光线照射到的光刻胶会发生反应;The principle of photolithography is generally to cover a layer of highly photosensitive photoresist on the surface of the wafer, and then irradiate the surface of the wafer with light (usually ultraviolet light, deep ultraviolet light, extreme ultraviolet light) The photoresist reacts when the light hits it;

光刻完成后,需要对没有光刻胶保护的晶圆部分进行刻蚀,最后洗去剩余光刻胶,就实现了半导体器件在晶圆表面的构建过程;After the photolithography is completed, it is necessary to etch the part of the wafer that is not protected by the photoresist, and finally wash off the remaining photoresist to realize the construction process of the semiconductor device on the wafer surface;

为了将晶圆表面不需要的覆盖层去除(即上述刻蚀作业),喷淋的方式为一个喷嘴将液体于晶圆中心喷入,并对透过平台带动晶圆高速旋转所形成的离心力,将化学液分布到晶圆表面的每一处,而往晶圆四周溅射的化学液则会被环状的化学液回收室所承接而回收,如:(申请号:CN201780027089.2、用于蚀刻系统的晶片轮廓)、(申请号:CN201721343049.2、一种旋转蚀刻装置及湿法刻蚀机台);In order to remove the unnecessary covering layer on the surface of the wafer (that is, the above-mentioned etching operation), the spraying method is that a nozzle sprays the liquid into the center of the wafer, and the centrifugal force formed by the high-speed rotation of the wafer driven by the platform, Distribute the chemical liquid to every part of the wafer surface, and the chemical liquid sputtered around the wafer will be recovered and recovered by the circular chemical liquid recovery chamber, such as: (application number: CN201780027089.2, used for Wafer outline of etching system), (application number: CN201721343049.2, a rotary etching device and wet etching machine);

但是此方式却会造成蚀刻率不均匀的现象发生,因为化学液是由喷出端相对的晶圆位置通过离心力往四周呈放射状的流动,而冲击力(如:喷淋式和浸泡式两种蚀刻方式的区别)亦是对蚀刻率有影响的,而精度不高;且刻蚀时的刻蚀液直接被离心甩出,利用率低;且进行刻蚀完成后,晶圆的刻蚀面是会残存刻蚀液的而继续反应,影响精度;However, this method will cause uneven etching rate, because the chemical liquid flows radially from the position of the wafer opposite the ejection end to the surroundings through centrifugal force, and the impact force (such as: spray type and immersion type) The difference in etching method) also affects the etching rate, but the accuracy is not high; and the etching solution during etching is directly thrown out by centrifugation, and the utilization rate is low; and after the etching is completed, the etching surface of the wafer It will continue to react due to the residual etching solution, which will affect the accuracy;

为此,急需提出一种可大大提高蚀刻效率、精度的晶圆主体化学液蚀刻装置。For this reason, it is urgent to propose a chemical liquid etching device for the main body of the wafer that can greatly improve the etching efficiency and precision.

发明内容Contents of the invention

(一)要解决的技术问题(1) Technical problems to be solved

为了克服现有技术不足,现提出一种高精度晶圆化学液蚀刻装置,以解决上述背景技术提出的问题。 In order to overcome the shortcomings of the existing technology, a high-precision wafer chemical liquid etching device is proposed to solve the problems raised by the above-mentioned background technology.

(二)技术方案(2) Technical solutions

本发明通过如下技术方案实现:本发明提出了一种高精度晶圆化学液蚀刻装置,包括,The present invention is realized through the following technical solutions: the present invention proposes a high-precision wafer chemical liquid etching device, comprising:

用于左右驱动位移的第一调位驱动器;The first adjustment driver for driving displacement left and right;

用于上下高度调位的第二调位驱动器,其与第一调位驱动器的输出轴固定连接;A second position adjustment driver for height adjustment up and down, which is fixedly connected with the output shaft of the first position adjustment driver;

用于提供旋转驱动功能的第一旋转驱动器,其与第二调位驱动器的输出轴固定连接;A first rotary driver for providing a rotary drive function, which is fixedly connected to the output shaft of the second positioning driver;

旋转卡盘,其与第一旋转驱动器的输出轴固定连接;a rotary chuck fixedly connected to the output shaft of the first rotary driver;

晶圆主体,其设于旋转卡盘外侧稳固,晶圆主体的刻蚀面朝下;The wafer body is fixed on the outer side of the rotary chuck, and the etching surface of the wafer body faces downward;

用于装刻蚀液的第一液槽,其设于晶圆主体下方且其伸入第一液槽内部;A first liquid tank for containing etching liquid, which is arranged under the wafer body and extends into the first liquid tank;

用于支撑的第一支脚,其固设于第一液槽外侧;The first leg for support is fixed on the outside of the first liquid tank;

用于冲击刻蚀晶圆主体的冲液机构,其与第一液槽固接;A liquid flushing mechanism for impact etching the wafer body, which is fixedly connected to the first liquid tank;

用于清洗晶圆主体残存刻蚀液的清洗机构,其固设于第一液槽外侧;A cleaning mechanism for cleaning the residual etching solution of the wafer body, which is fixed on the outside of the first liquid tank;

冲液机构包括一顶端设有凹槽的第二槽板,第二槽板外侧设有溢流口且其设有多组,第二槽板外侧与第一液槽内侧之间固设有第一支撑杆,第二槽板底端设有线状通孔且其与所述凹槽连通,线状通孔底端设有扩张板,扩张板内侧设有板腔且其连通设于线状通孔底端,扩张板设有多组且其板腔顶端形成的形状与线状通孔相同,所述多组的扩张板底端分别固设有第一分流管且其一端与所述板腔连通,另一端与第一集管一端连通固接,第一集管另一端固接有第一自动调节阀,线状通孔设于晶圆主体正下方,且线状通孔的长度不小于晶圆主体的直径;The liquid flushing mechanism includes a second groove plate with a groove at the top, overflow outlets are provided on the outside of the second groove plate and multiple groups are provided, and a second groove plate is fixed between the outside of the second groove plate and the inside of the first liquid tank. A support rod, the bottom end of the second slot plate is provided with a linear through hole and it communicates with the groove, the bottom end of the linear through hole is provided with an expansion plate, the inner side of the expansion plate is provided with a plate cavity and its connection is arranged in the linear through hole At the bottom of the hole, the expansion plate is provided with multiple groups and the shape formed at the top of the plate cavity is the same as that of the linear through hole. The other end of the first header is connected and fixed to one end of the first header, and the other end of the first header is fixed to the first automatic regulating valve. The linear through hole is located directly under the wafer body, and the length of the linear through hole is not less than the diameter of the wafer body;

清洗机构包括第二液槽,第二液槽底端固设有第二支脚,第二液槽内侧中部设有安装板,安装板外侧与第二液槽内侧之间固设有第二支撑杆,安装板顶端固设有喷头且其喷出口朝上,所述喷头设有多组且其分别与第二分流管的一端固接,连接喷头的第二分流管一端贯穿安装板顶底两端,所述连接多组喷头的多组的第二分流管另一端均匀固接于第二集管顶端,第二集管底端固接有第二自动调节阀,所述多组的喷头均匀分布于安装板顶端,且多组的喷头喷出面的液面均相邻紧密且不小于晶圆主体的底端面积,晶圆主体伸入第二液槽内侧并设于安装板正上方,第二液槽外侧与第一液槽固定连接。The cleaning mechanism includes a second liquid tank, the bottom of the second liquid tank is fixed with a second leg, the middle part of the inner side of the second liquid tank is provided with a mounting plate, and a second support rod is fixed between the outer side of the mounting plate and the inner side of the second liquid tank , the top of the mounting plate is fixed with a nozzle and its outlet is facing upwards. The nozzles are provided in multiple groups and are fixedly connected to one end of the second distribution pipe respectively. One end of the second distribution pipe connected to the nozzle runs through the top and bottom ends of the installation board. , the other ends of the multiple sets of second distribution pipes connected to multiple sets of nozzles are uniformly fixed on the top of the second header, and the bottom end of the second header is fixed with a second automatic regulating valve, and the multiple sets of nozzles are evenly distributed on the top of the mounting plate, and the liquid surfaces of the ejection surfaces of multiple groups of nozzles are adjacent to each other closely and not less than the area of the bottom of the wafer body. The wafer body extends into the second liquid tank and is located directly above the mounting plate. The outer side of the second liquid tank is fixedly connected with the first liquid tank.

进一步的,所述第一调位驱动器包括一槽口朝下的第一槽板,第一槽板内侧设有螺纹杆,螺纹杆左右两端贯穿第一槽板内外两侧且第一槽板通过轴承与螺纹杆转动连接,第一槽板内侧设有滑块且其相对两端由螺纹杆螺纹贯穿,第一槽板内侧固设有导条且其与滑块外侧滑动连接,螺纹杆一杆端与第二旋转驱动器的输出轴固定连接,第二旋转驱动器外侧固装有固板且其固设于第一槽板外侧,滑块露出于第一槽板外侧,滑块外侧与第二调位驱动器固定连接。Further, the first positioning driver includes a first slot plate with the notch facing downwards, a threaded rod is provided inside the first slot plate, and the left and right ends of the threaded rod pass through the inner and outer sides of the first slot plate and the first slot plate The bearing is connected to the threaded rod in rotation. The inner side of the first slot plate is provided with a slider and its opposite ends are threaded through by the threaded rod. The rod end is fixedly connected with the output shaft of the second rotary driver, the outside of the second rotary driver is fixedly equipped with a fixed plate and it is fixed on the outside of the first slot plate, the slider is exposed outside the first slot plate, and the outside of the slider is connected to the second slot plate. The positioning driver is fixedly connected.

进一步的,所述第一液槽和第二液槽底端分别设有排液管且其分别与第一液槽和第二液槽内部连通。Further, the bottom ends of the first liquid tank and the second liquid tank are respectively provided with drain pipes which communicate with the interior of the first liquid tank and the second liquid tank respectively.

进一步的,所述第一支脚和第二支脚分别设有多组且其分别均匀固设于第一液槽和第二支脚底端。Further, there are multiple sets of the first leg and the second leg, and they are uniformly fixed on the bottom ends of the first liquid tank and the second leg respectively.

进一步的,所述晶圆主体伸入于所述凹槽内侧。Further, the wafer body protrudes into the groove.

进一步的,所述第一自动调节阀和第二自动调节阀外侧端分别连接抽管,抽管之间连接抽取设备。Further, the outer ends of the first automatic regulating valve and the second automatic regulating valve are respectively connected to suction pipes, and extraction equipment is connected between the suction pipes.

进一步的,所述多组的第一分流管均匀分布于第一集管顶端。Further, the plurality of sets of first branch pipes are evenly distributed on the top of the first header.

进一步的,所述扩张板的板腔内部空间由上至下逐渐减小。Further, the inner space of the plate cavity of the expansion plate decreases gradually from top to bottom.

(三)有益效果 (3) Beneficial effects

本发明相对于现有技术,具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

通过在第一调位驱动器底端固设第二调位驱动器且其底端输出轴固接第一旋转驱动器,第一旋转驱动器底端输出轴固接旋转卡盘,通过旋转卡盘底端进行晶圆主体夹固稳定,将晶圆主体下移置入第二槽板顶端的凹槽当中并靠近凹槽底端,而第一自动调节阀外侧端连接抽管,抽管之间连接抽取设备,抽管进行外部抽取刻蚀液,经过第一分流管均匀分流至扩张板的板腔当中,在线状通孔处均匀喷出,同时以直径方式进行布满由第一旋转驱动器驱动的晶圆主体,整体冲击力、接触量均相同,效率、精度高;且晶圆主体的刻蚀面朝下,刻蚀反应物可直接脱出,不会滞留在晶圆主体处;根据上述,第二槽板顶端的凹槽形成留液空间,使得晶圆主体可浸泡在刻蚀液当中,提高利用率,并进一步提高刻蚀效率;溢流口提供过多的刻蚀液排出;By fixing the second positioning driver at the bottom of the first positioning driver and its bottom output shaft is fixed to the first rotary driver, the output shaft at the bottom of the first rotary driver is fixed to the rotary chuck, and the rotation is carried out through the bottom of the rotary chuck. The wafer body is clamped stably, and the wafer body is moved down and placed into the groove at the top of the second slot plate and close to the bottom of the groove, while the outer end of the first automatic regulating valve is connected to the suction pipe, and the extraction equipment is connected between the suction pipes , the suction pipe extracts the etching solution from the outside, and evenly divides it into the plate cavity of the expansion plate through the first shunt pipe, and sprays it evenly at the linear through hole, and at the same time, it is filled with the wafer driven by the first rotary driver in a diameter manner. Main body, the overall impact force and contact amount are the same, and the efficiency and precision are high; and the etching surface of the wafer main body is facing downward, and the etching reactant can directly come out without staying at the wafer main body; according to the above, the second groove The groove on the top of the plate forms a liquid retention space, so that the main body of the wafer can be immersed in the etching solution, which improves the utilization rate and further improves the etching efficiency; the overflow port provides excess etching solution discharge;

将清洗好的晶圆主体通过第一调位驱动器带动晶圆主体右移至第二液槽上方,再下移靠近喷头,由抽取设备、抽管进行外部清洗液(如;去离子水)并抽取,依次经过第二自动调节阀、第二集管、第二分流管在喷头处向上喷出,进行清洗晶圆主体,减少过度刻蚀,提高精度、结构简便;采用喷洗方式,强度大、效率高且进一步保证对刻蚀反应物洗出脱出。The cleaned wafer body is driven by the first position adjustment driver to move the wafer body to the right above the second liquid tank, and then move down to the nozzle, and the external cleaning liquid (such as; deionized water) is removed by the extraction device and the suction pipe. Extraction, sequentially through the second automatic regulating valve, the second header, and the second shunt pipe are sprayed upward at the nozzle to clean the wafer body, reduce excessive etching, improve precision, and have a simple structure; the spray cleaning method is adopted, and the strength is strong , high efficiency and further ensure the elution of etching reactants.

附图说明Description of drawings

通过阅读参照以下附图对非限制性实施例所作的详细描述,本发明的其它特征、目的和优点将会变得更明显:Other characteristics, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

图1为本发明的结构示意图;Fig. 1 is a structural representation of the present invention;

图中:第一调位驱动器-1、第二调位驱动器-2、第一旋转驱动器-3、旋转卡盘-4、晶圆主体-5、第一液槽-6、第一支脚-7、冲液机构-8、清洗机构-9、第一槽板-11、螺纹杆-12、滑块-13、导条-14、第二旋转驱动器-15、固板-16、第二槽板-81、溢流口-82、第一支撑杆-83、线状通孔-84、扩张板-85、第一分流管-86、第一集管-87、第一自动调节阀-88、第二液槽-91、第二支脚-92、安装板-93、第二支撑杆-94、喷头-95、第二分流管-96、第二集管-97、第二自动调节阀-98。In the figure: the first position adjustment driver-1, the second position adjustment driver-2, the first rotation driver-3, the rotation chuck-4, the wafer main body-5, the first liquid tank-6, the first leg-7 , flushing mechanism-8, cleaning mechanism-9, first trough plate-11, threaded rod-12, slider-13, guide bar-14, second rotary driver-15, solid plate-16, second trough plate -81, overflow port-82, first support rod-83, linear through hole-84, expansion plate-85, first shunt pipe-86, first header-87, first automatic regulating valve-88, The second liquid tank-91, the second leg-92, the installation plate-93, the second support rod-94, the nozzle-95, the second shunt pipe-96, the second header-97, the second automatic regulating valve-98 .

具体实施方式Detailed ways

请参阅图1,本发明提供一种高精度晶圆化学液蚀刻装置:包括,Please refer to Fig. 1, the present invention provides a kind of high-precision wafer chemical liquid etching device: comprising,

用于左右驱动位移的第一调位驱动器1,(如图所示):所述第一调位驱动器1包括一槽口朝下的第一槽板11;The first positioning driver 1 for driving displacement left and right, (as shown in the figure): the first positioning driver 1 includes a first groove plate 11 with the notch facing downward;

第一槽板11内侧设有螺纹杆12,螺纹杆12左右两端贯穿第一槽板11内外两侧且第一槽板11通过轴承与螺纹杆12转动连接,提供螺纹杆12在第一槽板11内侧旋转安装;The inner side of the first slot plate 11 is provided with a threaded rod 12, the left and right ends of the threaded rod 12 run through the inside and outside sides of the first slot plate 11 and the first slot plate 11 is rotatably connected with the threaded rod 12 by bearings, providing the threaded rod 12 in the first slot The inner side of the board 11 is rotated and installed;

第一槽板11内侧设有滑块13且其相对两端由螺纹杆12螺纹贯穿,第一槽板11内侧固设有导条14且其与滑块13外侧滑动连接,在螺纹作用下、导条14限位作用下,螺纹杆12旋转即可带动滑块13左右位移;The inside of the first slot plate 11 is provided with a slide block 13 and its opposite ends are threaded through by a threaded rod 12. The inside of the first slot plate 11 is fixed with a guide bar 14 and is slidably connected with the outside of the slide block 13. Under the action of the thread, Under the limit action of the guide bar 14, the rotation of the threaded rod 12 can drive the slider 13 to move left and right;

螺纹杆12一杆端与第二旋转驱动器15(如:电机等等)的输出轴固定连接,第二旋转驱动器15外侧固装有固板16且其固设于第一槽板11外侧,提供螺纹杆12旋转的驱动源;One rod end of the threaded rod 12 is fixedly connected with the output shaft of the second rotary driver 15 (such as: motor, etc.), and the second rotary driver 15 is equipped with a fixed plate 16 and is fixed on the outside of the first slot plate 11 to provide A drive source for the rotation of the threaded rod 12;

滑块13露出于第一槽板11外侧,滑块13外侧与第二调位驱动器2固定连接,以此驱动第二调位驱动器2的左右位移;The slider 13 is exposed on the outside of the first slot plate 11, and the outside of the slider 13 is fixedly connected with the second position adjustment driver 2, so as to drive the left and right displacement of the second position adjustment driver 2;

用于上下高度调位的第二调位驱动器2(如:气缸、电动推杆、液压缸等等),其输出轴的方向端与第一调位驱动器1的输出轴固定连接;The second positioning driver 2 (such as: air cylinder, electric push rod, hydraulic cylinder, etc.) used for vertical height adjustment, the direction end of its output shaft is fixedly connected with the output shaft of the first positioning driver 1;

用于提供旋转驱动功能的第一旋转驱动器3(如:电机等等),其输出轴的方向端与第二调位驱动器2的输出轴固定连接;The direction end of the output shaft of the first rotary driver 3 (such as: a motor, etc.) used to provide the rotary drive function is fixedly connected to the output shaft of the second positioning driver 2;

用于固定晶圆的旋转卡盘4且其夹口朝下,其顶端与第一旋转驱动器3的输出轴固定连接;The rotary chuck 4 used to fix the wafer has its jaw facing down, and its top end is fixedly connected with the output shaft of the first rotary driver 3;

晶圆主体5,其设于旋转卡盘4外侧稳固,其中晶圆主体5的刻蚀面朝下;Wafer body 5, which is fixed on the outside of spin chuck 4, wherein the etching surface of wafer body 5 faces downward;

用于装刻蚀液的第一液槽6,其设于晶圆主体5下方且其伸入第一液槽6内部,其中,所述第一液槽6底端设有排液管且其与第一液槽6内部连通,进行排出刻蚀液;The first liquid tank 6 for containing etching liquid is arranged below the wafer main body 5 and extends into the inside of the first liquid tank 6, wherein the bottom end of the first liquid tank 6 is provided with a drain pipe and its It communicates with the inside of the first liquid tank 6 to discharge the etching liquid;

用于支撑的第一支脚7,其固设于第一液槽6外侧,其中,所述第一支脚7设有多组且其均匀固设于第一液槽6底端;The first leg 7 for support is fixed on the outside of the first liquid tank 6, wherein the first leg 7 is provided in multiple groups and is evenly fixed on the bottom end of the first liquid tank 6;

用于冲击刻蚀晶圆主体5的冲液机构8,其与第一液槽6固接;A liquid flushing mechanism 8 for impact etching the wafer body 5, which is fixedly connected to the first liquid tank 6;

用于清洗晶圆主体5残存刻蚀液的清洗机构9,其固设于第一液槽6外侧;A cleaning mechanism 9 for cleaning the residual etching solution of the wafer body 5, which is fixed on the outside of the first liquid tank 6;

请参阅图1,冲液机构8包括一顶端设有凹槽的第二槽板81;Please refer to FIG. 1 , the liquid flushing mechanism 8 includes a second groove plate 81 with a groove at the top;

第二槽板81外侧设有溢流口82且其设有多组,其中多组的溢流口82进行均匀位置设置,且孔径大小可不同;The outer side of the second slot plate 81 is provided with an overflow port 82 and it is provided with multiple groups, wherein the overflow ports 82 of multiple groups are arranged at uniform positions, and the aperture sizes can be different;

第二槽板81外侧与第一液槽6内侧之间固设有第一支撑杆83,提供第二槽板81的支撑稳固,第一支撑杆83设有多组且其均匀分布于第二槽板81外侧;A first support rod 83 is fixed between the outside of the second tank plate 81 and the inside of the first liquid tank 6 to provide a stable support for the second tank plate 81. The first support rods 83 are provided with multiple groups and are evenly distributed on the second tank plate 81. The outer side of the slot plate 81;

第二槽板81底端设有线状通孔84且其与所述凹槽连通,用于喷液至晶圆主体5;The bottom end of the second slot plate 81 is provided with a linear through hole 84 and communicates with the groove for spraying liquid to the wafer main body 5;

线状通孔84底端设有扩张板85,扩张板85内侧设有板腔且其连通设于线状通孔84底端,扩张板85设有多组且其板腔顶端形成的形状与线状通孔84相同,以保证喷出量整体均匀;The bottom end of the linear through hole 84 is provided with an expansion plate 85, the inner side of the expansion plate 85 is provided with a plate cavity and its communication is located at the bottom end of the linear through hole 84, the expansion plate 85 is provided with multiple groups and the shape formed at the top of the plate cavity is the same as that of the expansion plate 85. The linear through-holes 84 are the same to ensure that the ejection volume is uniform as a whole;

所述多组的扩张板85底端分别固设有第一分流管86且其一端与所述板腔连通,另一端与第一集管87一端连通固接,其中,所述多组的第一分流管86均匀分布于第一集管87顶端,以提供均匀分流效果;The bottom ends of the multiple sets of expansion plates 85 are respectively fixed with a first branch pipe 86, one end of which communicates with the plate cavity, and the other end communicates with one end of the first header 87, wherein the multiple sets of the first A shunt pipe 86 is evenly distributed on the top of the first header 87 to provide a uniform shunt effect;

所述第一集管87(如图所示)固定(如:可设置贯穿口,贯穿后采用密封部件进行填充间隙或者焊接、粘接等等)贯穿第一液槽6内外两侧;The first header 87 (as shown in the figure) is fixed (for example, a through opening can be provided, and a sealing member is used to fill the gap after penetration, or welding, bonding, etc.) to penetrate the inner and outer sides of the first liquid tank 6;

所述第一集管87亦可直接固设在第一液槽6外侧(未画出),从第一液槽6外侧至其顶端口进行布置第一分流管86。The first header 87 can also be directly fixed on the outside of the first liquid tank 6 (not shown), and the first branch pipe 86 is arranged from the outside of the first liquid tank 6 to its top port.

第一集管87另一端固接有第一自动调节阀88(气动、电动排液管等等),关闭时,可防止凹槽的刻蚀液回流,节约资源。The other end of the first header 87 is fixedly connected with a first automatic regulating valve 88 (pneumatic or electric drain pipe, etc.), which can prevent the etching solution in the groove from flowing back and save resources when closed.

其中,所述晶圆主体5伸入于所述凹槽内侧。Wherein, the wafer body 5 protrudes into the groove.

其中,所述第一自动调节阀88外侧端连接抽管,抽管之间连接抽取设备(如:抽液泵等),抽管进行接触外部刻蚀液并抽取。Wherein, the outer end of the first automatic regulating valve 88 is connected with a suction pipe, and the suction pipes are connected with extraction equipment (such as a liquid suction pump, etc.), and the suction pipe contacts and extracts the external etching solution.

其中,所述扩张板85的板腔内部空间由上至下逐渐减小,提高冲击力。Wherein, the inner space of the plate cavity of the expansion plate 85 gradually decreases from top to bottom to increase the impact force.

请参阅图1,清洗机构9包括第二液槽91,用于装刻蚀液;Please refer to FIG. 1, the cleaning mechanism 9 includes a second liquid tank 91 for containing etching liquid;

其中,所述第二液槽91底端设有排液管且其与第二液槽91内部连通,进行排出清洗液;Wherein, a drain pipe is provided at the bottom of the second liquid tank 91 and communicates with the inside of the second liquid tank 91 to discharge the cleaning liquid;

第二液槽91底端固设有第二支脚92,其中,所述第二支脚92设有多组且其均匀固设于第二支脚92底端,提高支撑稳定性;The bottom end of the second liquid tank 91 is fixed with a second leg 92, wherein the second leg 92 is provided with multiple groups and is evenly fixed at the bottom end of the second leg 92 to improve the support stability;

第二液槽91内侧中部设有安装板93,安装板93外侧与第二液槽91内侧之间固设有第二支撑杆94,提供安装板93的位置固定,第二支撑杆94设有多组且其均匀分布于安装板93外侧;The middle part of the second liquid tank 91 is provided with a mounting plate 93, and a second support rod 94 is fixed between the outside of the mounting plate 93 and the inboard of the second liquid tank 91, so that the position of the mounting plate 93 is fixed, and the second support rod 94 is provided with Multiple groups and they are evenly distributed on the outside of the mounting plate 93;

安装板93顶端固设有喷头95且其喷出口朝上,其中喷头95优选为雾化喷头;The top of the mounting plate 93 is fixed with a nozzle 95 and its outlet is upward, wherein the nozzle 95 is preferably an atomizing nozzle;

所述喷头95设有多组且其分别与第二分流管96的一端固接,连接喷头95的第二分流管96一端贯穿安装板93顶底两端,以提供喷头95的连接通液;The nozzles 95 are provided with multiple groups and are fixedly connected to one end of the second branch pipe 96 respectively, and one end of the second branch pipe 96 connected to the nozzle 95 runs through the top and bottom ends of the mounting plate 93 to provide the connection liquid of the nozzle 95;

所述连接多组喷头95的多组的第二分流管96另一端均匀固接于第二集管97顶端,提高通液均匀度;The other ends of the multiple sets of second distribution pipes 96 connected to multiple sets of nozzles 95 are evenly fixed on the top of the second header 97 to improve the uniformity of liquid flow;

第二集管97底端固接有第二自动调节阀98(如气动、电动排液管等等),防止回流;The bottom end of the second header 97 is fixedly connected with a second automatic regulating valve 98 (such as pneumatic, electric drain pipe, etc.) to prevent backflow;

所述第二集管97(如图所示)固定(如:可设置贯穿口,贯穿后采用密封部件进行填充间隙或者焊接、粘接等等)贯穿第一液槽6内外两侧;The second header 97 (as shown in the figure) is fixed (for example, a through opening can be provided, and a sealing member is used to fill the gap or weld, bond, etc.) after penetrating through the inner and outer sides of the first liquid tank 6;

所述多组的喷头95均匀分布于安装板93顶端,且多组的喷头喷出面的液面均相邻紧密且不小于晶圆主体5的底端面积,进行设置多组的喷头95喷出的液面范围是不存在间隙的且该范围是不小于晶圆主体5的底端面积的;The multiple groups of nozzles 95 are evenly distributed on the top of the mounting plate 93, and the liquid surfaces of the multiple groups of nozzles are adjacent to each other and not less than the area of the bottom of the wafer body 5, and multiple groups of nozzles 95 are set to spray. There is no gap in the range of the liquid surface and the range is not smaller than the area of the bottom end of the wafer body 5;

晶圆主体5伸入第二液槽91内侧并设于安装板93正上方,第二液槽91外侧与第一液槽6固定连接。The wafer main body 5 protrudes into the second liquid tank 91 and is arranged directly above the mounting plate 93 , and the outer side of the second liquid tank 91 is fixedly connected with the first liquid tank 6 .

其中,所述第二自动调节阀98外侧端连接抽管,抽管之间连接抽取设备(如:抽液泵等),抽管进行接触外部清洗液(如;去离子水)并抽取。Wherein, the outer end of the second automatic regulating valve 98 is connected with a suction pipe, and the suction pipes are connected with extraction equipment (such as: a liquid suction pump, etc.), and the suction pipe contacts an external cleaning liquid (such as; deionized water) and extracts it.

还包括接电的控制器(未画出),其进行连接用电部件(第二调位驱动器2(为气缸、液压缸时则为供液、供气设备)、第一旋转驱动器3、第一自动调节阀88、抽取设备、第二旋转驱动器15)。It also includes a controller (not shown) connected to electricity, which is connected to the electrical components (the second adjustment driver 2 (when it is an air cylinder or a hydraulic cylinder, it is a liquid supply and air supply equipment), the first rotary driver 3, the second an automatic regulating valve 88, extraction device, second rotary drive 15).

工作原理:首先,将该高效率晶圆化学液蚀刻装置取出放置在使用位置,第一调位驱动器1安置在第一液槽6上方高处位置;Working principle: firstly, the high-efficiency wafer chemical liquid etching device is taken out and placed in the use position, and the first position adjustment driver 1 is placed at a high position above the first liquid tank 6;

然后,由控制器进行连接外部电源;Then, the external power supply is connected by the controller;

接着,在旋转卡盘4安置晶圆主体5,由第二调位驱动器2驱动下移,使得晶圆主体5置于第二槽板81顶端的凹槽当中,并靠近凹槽内壁底端设置,抽管置于外部进行抽取刻蚀液的位置处;Next, the wafer main body 5 is placed on the spin chuck 4, and is driven down by the second positioning driver 2, so that the wafer main body 5 is placed in the groove at the top of the second slot plate 81 and placed near the bottom of the inner wall of the groove. , the suction pipe is placed at the position where the etching solution is extracted from the outside;

之后,启动抽取设备运转,即可由抽管进行外部抽取刻蚀液,依次经过第一自动调节阀88和第一集管87,再由第一分流管86均匀流至扩张板85的板腔当中,同步上流呈线条状,并在线状通孔84处均匀喷出,喷出至晶圆主体5,同时以直径方式进行布满由第一旋转驱动器驱动的晶圆主体5,整体冲击力、接触量均相同,效率、精度高;Afterwards, start the operation of the extraction equipment, and the etching solution can be extracted from the outside by the suction pipe, and then pass through the first automatic regulating valve 88 and the first header 87 in sequence, and then evenly flow into the plate cavity of the expansion plate 85 through the first shunt pipe 86 , the synchronous upper flow is in the shape of a line, and is evenly ejected at the linear through-hole 84, and ejected to the wafer main body 5, and at the same time, it is covered with the diameter of the wafer main body 5 driven by the first rotary driver. The overall impact force, contact The quantity is the same, the efficiency and precision are high;

根据上述,晶圆主体5的刻蚀面朝下,刻蚀反应物可直接脱出,不会滞留在晶圆主体5处;且第二槽板81顶端的凹槽形成留液空间,使得晶圆主体5的刻蚀面可浸泡在刻蚀液当中,提高利用率,并进一步提高刻蚀效率;溢流口82提供过多的刻蚀液排出至第一液槽6,在排液管进行排出刻蚀液(排出位置可设置收集部件);According to the above, the etching surface of the wafer main body 5 faces downward, and the etching reactant can directly come out without staying at the wafer main body 5; and the groove at the top of the second groove plate 81 forms a liquid retention space, so that the wafer The etching surface of the main body 5 can be immersed in the etching solution, which improves the utilization rate and further improves the etching efficiency; the overflow port 82 provides the excess etching solution to be discharged to the first liquid tank 6, and is discharged in the drain pipe Etching solution (collecting parts can be set at the discharge position);

最后,将清洗好的晶圆主体5通过第二调位驱动器2运转进行上移至高出第一液槽6,再由第一调位驱动器1的第二旋转驱动器15运转,即可由螺纹杆12旋转,在导条14的限位作用下使得滑块13左右位移;Finally, the cleaned wafer main body 5 is moved up to be higher than the first liquid tank 6 through the operation of the second position adjustment driver 2, and then operated by the second rotary driver 15 of the first position adjustment driver 1, which can be achieved by the threaded rod 12 Rotate, and make the slider 13 move left and right under the limit action of the guide bar 14;

带动晶圆主体5右移至第二液槽91上方,再下移靠近喷头95,由抽取设备、抽管进行外部清洗液(如;去离子水)并抽取,依次经过第二自动调节阀98、第二集管97、第二分流管96在喷头95处向上喷出,进行清洗晶圆主体5,减少过度刻蚀,提高精度、结构简便;采用喷洗方式,强度大、效率高且进一步保证对刻蚀反应物洗出脱出;排液管,进行排出清洗液(排出位置可设置收集部件)。Drive the wafer main body 5 to move to the right above the second liquid tank 91, and then move down close to the nozzle 95. The external cleaning liquid (such as; deionized water) is extracted by the extraction equipment and the suction pipe, and then passes through the second automatic adjustment valve 98 in turn. , the second manifold 97, and the second branch pipe 96 are ejected upward at the shower head 95 to clean the wafer body 5, reduce excessive etching, improve precision, and have a simple structure; the spray cleaning method is adopted, which has high strength, high efficiency and further Ensure that the etching reactants are washed out; the drain pipe is used to discharge the cleaning solution (the discharge position can be provided with a collecting part).

本发明的控制方式是通过控制器来自动控制,控制器的控制电路通过本领域的技术人员简单编程即可实现,电源的提供也属于本领域的公知常识,并且本发明主要用来保护机械装置,所以本发明不再详细解释控制方式和电路连接。The control mode of the present invention is automatically controlled by a controller, and the control circuit of the controller can be realized through simple programming by those skilled in the art. The supply of power also belongs to common knowledge in this field, and the present invention is mainly used to protect mechanical devices , so the present invention will not explain the control method and circuit connection in detail.

以上显示和描述了本发明的基本原理和主要特征和本发明的优点,对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above. For those skilled in the art, it is obvious that the present invention is not limited to the details of the above-mentioned exemplary embodiments, and without departing from the spirit or fundamentals of the present invention. The present invention can be implemented in other specific forms without any specific features. Accordingly, the embodiments should be regarded in all points of view as exemplary and not restrictive, the scope of the invention being defined by the appended claims rather than the foregoing description, and it is therefore intended that the scope of the invention be defined by the appended claims rather than by the foregoing description. All changes within the meaning and range of equivalents of the elements are embraced in the present invention. Any reference sign in a claim should not be construed as limiting the claim concerned.

此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。In addition, it should be understood that although this specification is described according to implementation modes, not each implementation mode only includes an independent technical solution, and this description in the specification is only for clarity, and those skilled in the art should take the specification as a whole , the technical solutions in the various embodiments can also be properly combined to form other implementations that can be understood by those skilled in the art.

Claims (8)

1.一种高精度晶圆化学液蚀刻装置,其特征在于:包括,1. A high-precision wafer chemical liquid etching device, characterized in that: comprising, 用于左右驱动位移的第一调位驱动器(1);The first position adjustment driver (1) used for driving displacement left and right; 用于上下高度调位的第二调位驱动器(2),其与第一调位驱动器(1)的输出轴固定连接;The second position adjustment driver (2) used for vertical height adjustment, which is fixedly connected with the output shaft of the first position adjustment driver (1); 用于提供旋转驱动功能的第一旋转驱动器(3),其与第二调位驱动器(2)的输出轴固定连接;A first rotary driver (3) for providing a rotary drive function, which is fixedly connected to the output shaft of the second position adjustment driver (2); 旋转卡盘(4),其与第一旋转驱动器(3)的输出轴固定连接;a rotary chuck (4), which is fixedly connected to the output shaft of the first rotary driver (3); 晶圆主体(5),其设于旋转卡盘(4)外侧稳固,晶圆主体(5)的刻蚀面朝下;The wafer main body (5), which is fixed on the outside of the rotary chuck (4), and the etching surface of the wafer main body (5) faces downward; 用于装刻蚀液的第一液槽(6),其设于晶圆主体(5)下方且其伸入第一液槽(6)内部;A first liquid tank (6) for containing etching liquid, which is arranged under the wafer main body (5) and extends into the first liquid tank (6); 用于支撑的第一支脚(7),其固设于第一液槽(6)外侧;The first leg (7) for support is fixed on the outside of the first liquid tank (6); 用于冲击刻蚀晶圆主体(5)的冲液机构(8),其与第一液槽(6)固接;A liquid flushing mechanism (8) for impact etching the wafer body (5), which is fixedly connected to the first liquid tank (6); 用于清洗晶圆主体(5)残存刻蚀液的清洗机构(9),其固设于第一液槽(6)外侧;A cleaning mechanism (9) for cleaning the residual etching solution of the wafer body (5), which is fixed on the outside of the first liquid tank (6); 冲液机构(8)包括一顶端设有凹槽的第二槽板(81),第二槽板(81)外侧设有溢流口(82)且其设有多组,第二槽板(81)外侧与第一液槽(6)内侧之间固设有第一支撑杆(83),第二槽板(81)底端设有线状通孔(84)且其与所述凹槽连通,线状通孔(84)底端设有扩张板(85),扩张板(85)内侧设有板腔且其连通设于线状通孔(84)底端,扩张板(85)设有多组且其板腔顶端形成的形状与线状通孔(84)相同,所述多组的扩张板(85)底端分别固设有第一分流管(86)且其一端与所述板腔连通,另一端与第一集管(87)一端连通固接,第一集管(87)另一端固接有第一自动调节阀(88),线状通孔(84)设于晶圆主体(5)正下方,且线状通孔(84)的长度不小于晶圆主体(5)的直径;The liquid flushing mechanism (8) includes a second slot plate (81) with a groove on the top, and an overflow port (82) is provided on the outside of the second slot plate (81) and it is provided with multiple groups. The second slot plate ( 81) A first support rod (83) is fixed between the outer side and the inner side of the first liquid tank (6), and the bottom end of the second tank plate (81) is provided with a linear through hole (84) which communicates with the groove , the bottom end of the linear through hole (84) is provided with an expansion plate (85), the inner side of the expansion plate (85) is provided with a plate cavity and its connection is provided at the bottom end of the linear through hole (84), and the expansion plate (85) is provided with There are multiple groups and the shapes formed at the top of the plate cavity are the same as the linear through holes (84). The bottom ends of the expansion plates (85) of the multiple groups are respectively fixed with a first shunt tube (86) and one end of which is connected to the plate. cavity, and the other end is connected with one end of the first header (87), and the other end of the first header (87) is fixed with the first automatic regulating valve (88), and the linear through hole (84) is set on the wafer directly below the main body (5), and the length of the linear through hole (84) is not less than the diameter of the wafer main body (5); 清洗机构(9)包括第二液槽(91),第二液槽(91)底端固设有第二支脚(92),第二液槽(91)内侧中部设有安装板(93),安装板(93)外侧与第二液槽(91)内侧之间固设有第二支撑杆(94),安装板(93)顶端固设有喷头(95)且其喷出口朝上,所述喷头(95)设有多组且其分别与第二分流管(96)的一端固接,连接喷头(95)的第二分流管(96)一端贯穿安装板(93)顶底两端,所述连接多组喷头(95)的多组的第二分流管(96)另一端均匀固接于第二集管(97)顶端,第二集管(97)底端固接有第二自动调节阀(98),所述多组的喷头(95)均匀分布于安装板(93)顶端,且多组的喷头喷出面的液面均相邻紧密且不小于晶圆主体(5)的底端面积,晶圆主体(5)伸入第二液槽(91)内侧并设于安装板(93)正上方,第二液槽(91)外侧与第一液槽(6)固定连接。The cleaning mechanism (9) includes a second liquid tank (91), a second leg (92) is fixed at the bottom of the second liquid tank (91), and a mounting plate (93) is provided in the middle of the inner side of the second liquid tank (91). A second support rod (94) is fixed between the outside of the installation plate (93) and the inside of the second liquid tank (91), and a spray head (95) is fixed on the top of the installation plate (93) with its outlet facing upwards. The nozzles (95) are provided with multiple groups and are fixedly connected to one end of the second shunt pipe (96) respectively, and one end of the second shunt pipe (96) connected to the nozzle (95) runs through the top and bottom ends of the mounting plate (93). The other ends of the multiple sets of second shunt pipes (96) connected to multiple sets of nozzles (95) are evenly fixed on the top of the second header (97), and the bottom end of the second header (97) is fixed with the second automatic adjustment Valve (98), the plurality of groups of nozzles (95) are evenly distributed on the top of the mounting plate (93), and the liquid levels of the ejection surfaces of the plurality of groups of nozzles are all adjacent to each other and not smaller than the bottom of the wafer body (5) The wafer body (5) extends into the inner side of the second liquid tank (91) and is arranged directly above the mounting plate (93), and the outer side of the second liquid tank (91) is fixedly connected with the first liquid tank (6). 2.根据权利要求1所述的一种高精度晶圆化学液蚀刻装置,其特征在于:所述第一调位驱动器(1)包括一槽口朝下的第一槽板(11),第一槽板(11)内侧设有螺纹杆(12),螺纹杆(12)左右两端贯穿第一槽板(11)内外两侧且第一槽板(11)通过轴承与螺纹杆(12)转动连接,第一槽板(11)内侧设有滑块(13)且其相对两端由螺纹杆(12)螺纹贯穿,第一槽板(11)内侧固设有导条(14)且其与滑块(13)外侧滑动连接,螺纹杆(12)一杆端与第二旋转驱动器(15)的输出轴固定连接,第二旋转驱动器(15)外侧固装有固板(16)且其固设于第一槽板(11)外侧,滑块(13)露出于第一槽板(11)外侧,滑块(13)外侧与第二调位驱动器(2)固定连接。2. A high-precision wafer chemical liquid etching device according to claim 1, characterized in that: the first position adjustment driver (1) includes a first slot plate (11) with the notch facing down, and the first A threaded rod (12) is provided on the inner side of a slot plate (11), and the left and right ends of the threaded rod (12) run through the inner and outer sides of the first slot plate (11) and the first slot plate (11) passes through the bearing and the threaded rod (12) Rotational connection, the inner side of the first slot plate (11) is provided with a slider (13) and its opposite ends are threaded through by threaded rods (12), and the inner side of the first slot plate (11) is fixed with a guide bar (14) and its It is slidingly connected with the outside of the slider (13), and one rod end of the threaded rod (12) is fixedly connected with the output shaft of the second rotary driver (15). It is fixed on the outside of the first slot plate (11), the slider (13) is exposed outside the first slot plate (11), and the outside of the slider (13) is fixedly connected with the second position adjustment driver (2). 3.根据权利要求1所述的一种高精度晶圆化学液蚀刻装置,其特征在于:所述第一液槽(6)和第二液槽(91)底端分别设有排液管且其分别与第一液槽(6)和第二液槽(91)内部连通。3. A high-precision wafer chemical liquid etching device according to claim 1, characterized in that: the bottom ends of the first liquid tank (6) and the second liquid tank (91) are respectively provided with drain pipes and They communicate with the inside of the first liquid tank (6) and the second liquid tank (91) respectively. 4.根据权利要求1所述的一种高精度晶圆化学液蚀刻装置,其特征在于:所述第一支脚(7)和第二支脚(92)分别设有多组且其分别均匀固设于第一液槽(6)和第二支脚(92)底端。4. A high-precision wafer chemical liquid etching device according to claim 1, characterized in that: the first leg (7) and the second leg (92) are respectively provided with multiple groups and are fixed evenly At the bottom of the first liquid tank (6) and the second leg (92). 5.根据权利要求1所述的一种高精度晶圆化学液蚀刻装置,其特征在于:所述晶圆主体(5)伸入于所述凹槽内侧。5. The high-precision wafer chemical liquid etching device according to claim 1, characterized in that: the wafer body (5) protrudes into the inner side of the groove. 6.根据权利要求1所述的一种高精度晶圆化学液蚀刻装置,其特征在于:所述第一自动调节阀(88)和第二自动调节阀(98)外侧端分别连接抽管,抽管之间连接抽取设备。6. A high-precision wafer chemical liquid etching device according to claim 1, characterized in that: the outer ends of the first automatic regulating valve (88) and the second automatic regulating valve (98) are respectively connected to suction pipes, The extraction equipment is connected between the suction tubes. 7.根据权利要求1所述的一种高精度晶圆化学液蚀刻装置,其特征在于:所述多组的第一分流管(86)均匀分布于第一集管(87)顶端。7. The high-precision wafer chemical liquid etching device according to claim 1, characterized in that: the multiple sets of first shunt tubes (86) are evenly distributed on the top of the first manifold (87). 8.根据权利要求1所述的一种高精度晶圆化学液蚀刻装置,其特征在于:所述扩张板(85)的板腔内部空间由上至下逐渐减小。8. The high-precision wafer chemical liquid etching device according to claim 1, characterized in that: the inner space of the plate cavity of the expansion plate (85) gradually decreases from top to bottom.
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CN111180351A (en) * 2018-11-12 2020-05-19 长鑫存储技术有限公司 Rotary wet etching equipment and method
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290898A (en) * 2006-04-24 2007-11-08 Etsujo Kagi Kofun Yugenkoshi Method and apparatus of etching fabrication process of panel
JP2009105353A (en) * 2007-10-26 2009-05-14 Renesas Technology Corp Manufacturing method of semiconductor device
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