CN116088623A - NMOS low dropout linear voltage regulator, chip and electronic equipment - Google Patents
NMOS low dropout linear voltage regulator, chip and electronic equipment Download PDFInfo
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Abstract
Description
技术领域technical field
本公开的实施例涉及低压差线性稳压器(Low Dropout Regulaor,LDO)技术领域,具体地涉及一种NMOS LDO、芯片及电子设备。Embodiments of the present disclosure relate to the technical field of low dropout regulator (Low Dropout Regulaor, LDO), in particular to an NMOS LDO, a chip and an electronic device.
背景技术Background technique
低压差线性稳压器是一种线性的电压稳压器。LDO根据使用的功率管为NMOS功率管或PMOS功率管的不同可以分为PMOS LDO和NMOS LDO。传统的NMOS LDO在电源电压上电完成,软启动电路开启前,由于NMOS功率管栅端电压较高,NMOS功率管被导通,从而造成NMOSLDO输出电压出现“台阶”形的波动,影响后续负载电路的正常工作。A low dropout linear regulator is a linear voltage regulator. LDO can be divided into PMOS LDO and NMOS LDO according to whether the power tube used is NMOS power tube or PMOS power tube. In the traditional NMOS LDO, after the power supply voltage is powered on, before the soft-start circuit is turned on, the NMOS power transistor is turned on due to the high gate voltage of the NMOS power transistor, which causes a "step"-shaped fluctuation in the output voltage of the NMOS LDO, which affects subsequent loads. normal operation of the circuit.
发明内容Contents of the invention
本公开的实施例的目的是提供一种NMOS低压差线性稳压器、芯片及电子设备,利用软启动电路在上电后产生的启动信号来控制NMOS功率管的通断,当软启动电路没有工作时,控制NMOS功率管被关断,消除了NMOS低压差线性稳压器输出电压中的“台阶”形的波动。The purpose of the embodiments of the present disclosure is to provide an NMOS low dropout linear voltage regulator, chip and electronic equipment, using the startup signal generated by the soft-start circuit after power-on to control the on-off of the NMOS power tube, when the soft-start circuit does not When working, the NMOS power tube is controlled to be turned off, which eliminates the "step" fluctuation in the output voltage of the NMOS low-dropout linear regulator.
为了实现上述目的,根据本公开的第一方面,提供了一种NMOS低压差线性稳压器,包括:软启动电路、开关控制电路、电荷泵电路、NMOS功率管、误差放大器、缓冲级、第一晶体管、第一反馈电阻和第二反馈电阻,其中,所述软启动电路的输出端耦接所述误差放大器的同相输入端,所述误差放大器的输出端耦接所述缓冲级的输入端,所述缓冲级的输出端耦接所述第一晶体管的第一极与第一节点,所述第一晶体管的控制极耦接所述第一晶体管的第二极与第二节点,所述开关控制电路耦接在所述第一节点与所述第二节点之间,所述电荷泵电路的输出端耦接所述NMOS功率管的控制极与所述第二节点,所述NMOS功率管的第一极耦接所述NMOS低压差线性稳压器的输出端与所述第一反馈电阻的第一端,所述NMOS功率管的第二极耦接第一电压端,所述第一反馈电阻的第二端耦接所述第二反馈电阻的第一端与所述误差放大器的反向输入端,所述第二反馈电阻的第二端耦接第二电压端。其中,所述电荷泵电路用于产生偏置电压,并经由所述第二节点将所述偏置电压提供至所述NMOS功率管的控制极;所述软启动电路用于在上电后控制启动信号随着电源电压的上升而上升直到达到预设电压值,并将所述启动信号提供至所述开关控制电路;所述开关控制电路用于利用所述启动信号控制所述第一晶体管的通断,以控制所述NMOS功率管的通断。In order to achieve the above object, according to the first aspect of the present disclosure, an NMOS low dropout linear regulator is provided, including: a soft start circuit, a switch control circuit, a charge pump circuit, an NMOS power transistor, an error amplifier, a buffer stage, a first A transistor, a first feedback resistor and a second feedback resistor, wherein the output terminal of the soft start circuit is coupled to the non-inverting input terminal of the error amplifier, and the output terminal of the error amplifier is coupled to the input terminal of the buffer stage , the output terminal of the buffer stage is coupled to the first pole of the first transistor and the first node, the control pole of the first transistor is coupled to the second pole of the first transistor and the second node, the The switch control circuit is coupled between the first node and the second node, the output terminal of the charge pump circuit is coupled to the control electrode of the NMOS power transistor and the second node, and the NMOS power transistor The first pole of the NMOS low-dropout linear regulator is coupled to the first end of the first feedback resistor, the second pole of the NMOS power transistor is coupled to the first voltage terminal, and the first The second terminal of the feedback resistor is coupled to the first terminal of the second feedback resistor and the inverting input terminal of the error amplifier, and the second terminal of the second feedback resistor is coupled to the second voltage terminal. Wherein, the charge pump circuit is used to generate a bias voltage, and provide the bias voltage to the control electrode of the NMOS power transistor through the second node; the soft start circuit is used to control The start signal rises with the rise of the power supply voltage until it reaches a preset voltage value, and the start signal is provided to the switch control circuit; the switch control circuit is used to control the first transistor by using the start signal on and off to control the on and off of the NMOS power transistor.
在本公开的一些实施例中,所述软启动电路包括:第一电流源和第一电容器,其中,所述第一电流源的第一端耦接所述第一电压端,所述第一电流源的第二端耦接所述第一电容器的第一端与所述软启动电路的输出端,所述第一电容器的第二端耦接所述第二电压端。In some embodiments of the present disclosure, the soft start circuit includes: a first current source and a first capacitor, wherein the first terminal of the first current source is coupled to the first voltage terminal, and the first The second terminal of the current source is coupled to the first terminal of the first capacitor and the output terminal of the soft start circuit, and the second terminal of the first capacitor is coupled to the second voltage terminal.
在本公开的一些实施例中,所述电荷泵电路包括:电荷泵和电荷泵内阻,所述电荷泵的输出端耦接所述电荷泵内阻的第一端,所述电荷泵内阻的第二端耦接所述电荷泵电路的输出端。In some embodiments of the present disclosure, the charge pump circuit includes: a charge pump and an internal resistance of the charge pump, the output terminal of the charge pump is coupled to the first end of the internal resistance of the charge pump, and the internal resistance of the charge pump The second terminal of is coupled to the output terminal of the charge pump circuit.
在本公开的一些实施例中,所述开关控制电路包括:第二晶体管、第三晶体管、第四晶体管、第三电阻器、第四电阻器、第二电容器和施密特触发器,其中,所述第二晶体管的控制极耦接所述施密特触发器的第一输出端,所述第二晶体管的第一极耦接第三电压端,所述第二晶体管的第二极耦接所述第三电阻器的第一端;所述第三晶体管的控制极耦接所述施密特触发器的第二输出端,所述第三晶体管的第一极耦接所述第三电阻器的第一端,所述第三晶体管的第二极耦接所述第二电压端;所述第三电阻器的第二端耦接所述第二电容器的第一端;所述第四晶体管的控制极耦接所述第二电容器的第一端,所述第四晶体管的第一极耦接所述第四电阻器的第一端,所述第四晶体管的第二极耦接所述第二节点;所述第四电阻器的第二端耦接所述第一节点;所述第二电容器的第二端耦接所述第二电压端;所述施密特触发器的输入端耦接所述软启动电路的输出端。In some embodiments of the present disclosure, the switch control circuit includes: a second transistor, a third transistor, a fourth transistor, a third resistor, a fourth resistor, a second capacitor, and a Schmitt trigger, wherein, The control pole of the second transistor is coupled to the first output terminal of the Schmitt trigger, the first pole of the second transistor is coupled to the third voltage terminal, and the second pole of the second transistor is coupled to The first terminal of the third resistor; the control pole of the third transistor is coupled to the second output terminal of the Schmitt trigger, and the first pole of the third transistor is coupled to the third resistor The first terminal of the resistor, the second pole of the third transistor is coupled to the second voltage terminal; the second terminal of the third resistor is coupled to the first terminal of the second capacitor; the fourth The control pole of the transistor is coupled to the first terminal of the second capacitor, the first pole of the fourth transistor is coupled to the first terminal of the fourth resistor, and the second pole of the fourth transistor is coupled to the the second node; the second end of the fourth resistor is coupled to the first node; the second capacitor is coupled to the second voltage end; the input of the Schmitt trigger The terminal is coupled to the output terminal of the soft start circuit.
在本公开的一些实施例中,所述施密特触发器包括:第五晶体管、第六晶体管、第七晶体管、第八晶体管、第九晶体管、第十晶体管、第十一晶体管、第十二晶体管、第五电阻器和第六电阻器,其中,所述第五晶体管的控制极耦接所述施密特触发器的输入端,所述第五晶体管的第一极耦接所述第一电压端,所述第五晶体管的第二极耦接所述第六晶体管的第一极与所述第九晶体管的第一极;所述第六晶体管的控制极耦接所述施密特触发器的输入端,所述第六晶体管的第二极耦接所述第七晶体管的第一极与所述施密特触发器的第二输出端;所述第七晶体管的控制极耦接所述施密特触发器的输入端,所述第七晶体管的第二极耦接所述第八晶体管的第一极与所述第十晶体管的第一极;所述第八晶体管的控制极耦接所述施密特触发器的输入端,所述第八晶体管的第二极耦接所述第二电压端;所述第九晶体管的控制极耦接所述施密特触发器的第二输出端,所述第九晶体管的第二极耦接所述第六电阻器的第一端;所述第十晶体管的控制极耦接所述施密特触发器的第二输出端,所述第十晶体管的第二极耦接所述第五电阻器的第一端;所述第五电阻器的第二端耦接所述第一电压端;所述第六电阻器的第二端耦接所述第二电压端;所述第十一晶体管的控制极耦接所述施密特触发器的第二输出端,所述第十一晶体管的第一极耦接所述第一电压端,所述第十一晶体管的第二极耦接所述施密特触发器的第一输出端;所述第十二晶体管的控制极耦接所述施密特触发器的第二输出端,所述第十二晶体管的第一极耦接所述施密特触发器的第一输出端,所述第十二晶体管的第二极耦接所述第二电压端。In some embodiments of the present disclosure, the Schmitt trigger includes: a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor transistor, a fifth resistor, and a sixth resistor, wherein the control pole of the fifth transistor is coupled to the input terminal of the Schmitt trigger, and the first pole of the fifth transistor is coupled to the first voltage terminal, the second pole of the fifth transistor is coupled to the first pole of the sixth transistor and the first pole of the ninth transistor; the control pole of the sixth transistor is coupled to the Schmitt trigger The input terminal of the device, the second pole of the sixth transistor is coupled to the first pole of the seventh transistor and the second output terminal of the Schmitt trigger; the control pole of the seventh transistor is coupled to the The input terminal of the Schmitt trigger, the second pole of the seventh transistor is coupled to the first pole of the eighth transistor and the first pole of the tenth transistor; the control pole of the eighth transistor is coupled connected to the input terminal of the Schmitt trigger, the second pole of the eighth transistor is coupled to the second voltage terminal; the control pole of the ninth transistor is coupled to the second terminal of the Schmitt trigger output terminal, the second pole of the ninth transistor is coupled to the first terminal of the sixth resistor; the control pole of the tenth transistor is coupled to the second output terminal of the Schmitt trigger, the The second pole of the tenth transistor is coupled to the first terminal of the fifth resistor; the second terminal of the fifth resistor is coupled to the first voltage terminal; the second terminal of the sixth resistor is coupled to connected to the second voltage terminal; the control pole of the eleventh transistor is coupled to the second output terminal of the Schmitt trigger, and the first pole of the eleventh transistor is coupled to the first voltage terminal , the second pole of the eleventh transistor is coupled to the first output terminal of the Schmitt trigger; the control pole of the twelfth transistor is coupled to the second output terminal of the Schmitt trigger, A first pole of the twelfth transistor is coupled to the first output terminal of the Schmitt trigger, and a second pole of the twelfth transistor is coupled to the second voltage terminal.
在本公开的一些实施例中,当所述软启动电路的输出端输出的所述启动信号未达到所述预设电压值时,所述施密特触发器的第一输出端输出为低电平,所述施密特触发器的第二输出端输出为高电平;当所述软启动电路的输出端输出的所述启动信号达到所述预设电压值时,所述施密特触发器的第一输出端输出为高电平,所述施密特触发器的第二输出端输出为低电平。In some embodiments of the present disclosure, when the startup signal output by the output terminal of the soft-start circuit does not reach the preset voltage value, the output of the first output terminal of the Schmitt trigger is a low voltage level, the output of the second output terminal of the Schmitt trigger is a high level; when the start signal output by the output terminal of the soft start circuit reaches the preset voltage value, the Schmitt trigger The output of the first output terminal of the trigger is high level, and the output of the second output terminal of the Schmitt trigger is low level.
在本公开的一些实施例中,当所述施密特触发器的第一输出端输出为低电平,所述施密特触发器的第二输出端输出为高电平时,所述第四晶体管被导通,所述第一晶体管被短路,所述NMOS功率管被关断。In some embodiments of the present disclosure, when the first output terminal of the Schmitt trigger outputs a low level and the second output terminal of the Schmitt trigger outputs a high level, the fourth The transistor is turned on, the first transistor is short-circuited, and the NMOS power transistor is turned off.
在本公开的一些实施例中,当所述施密特触发器的第一输出端输出为高电平,所述施密特触发器的第二输出端输出为低电平时,所述第四晶体管被关断,所述第一晶体管被接入电路,所述NMOS功率管被导通。In some embodiments of the present disclosure, when the first output terminal of the Schmitt trigger outputs a high level and the second output terminal of the Schmitt trigger outputs a low level, the fourth The transistor is turned off, the first transistor is connected to the circuit, and the NMOS power transistor is turned on.
根据本公开的第二方面,提供了一种芯片。该芯片包括根据本公开的第一方面所述的NMOS低压差线性稳压器。According to a second aspect of the present disclosure, a chip is provided. The chip includes the NMOS low dropout linear voltage regulator according to the first aspect of the present disclosure.
根据本公开的第三方面,提供了一种电子设备。该电子设备包括根据本公开的第二方面所述的芯片。According to a third aspect of the present disclosure, an electronic device is provided. The electronic device includes the chip according to the second aspect of the present disclosure.
本公开的实施例的其它特征和优点将在随后的具体实施方式部分予以详细说明。Other features and advantages of the embodiments of the present disclosure will be described in detail in the detailed description that follows.
附图说明Description of drawings
附图是用来提供对本公开的实施例的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本公开的实施例,但并不构成对本公开的实施例的限制。在附图中:The accompanying drawings are used to provide a further understanding of the embodiments of the present disclosure, and constitute a part of the description, together with the following specific embodiments, are used to explain the embodiments of the present disclosure, but are not intended to limit the embodiments of the present disclosure. In the attached picture:
图1是一种NMOS LDO的示例性电路图;Fig. 1 is an exemplary circuit diagram of an NMOS LDO;
图2是一种NMOS LDO的仿真波形示意图;Figure 2 is a schematic diagram of a simulation waveform of an NMOS LDO;
图3是根据本公开的实施例的NMOS低压差线性稳压器的示意性框图;3 is a schematic block diagram of an NMOS low dropout linear regulator according to an embodiment of the present disclosure;
图4是根据本公开的实施例的NMOS低压差线性稳压器的另一示意性框图;4 is another schematic block diagram of an NMOS low dropout linear regulator according to an embodiment of the present disclosure;
图5是根据本公开的实施例的NMOS低压差线性稳压器中的开关控制电路的示意性框图;5 is a schematic block diagram of a switch control circuit in an NMOS low dropout linear regulator according to an embodiment of the present disclosure;
图6是根据本公开的实施例的施密特触发器的示例性电路图;6 is an exemplary circuit diagram of a Schmitt trigger according to an embodiment of the present disclosure;
图7是根据本公开的实施例的NMOS低压差线性稳压器的仿真波形示意图。FIG. 7 is a schematic diagram of simulation waveforms of an NMOS low dropout linear regulator according to an embodiment of the present disclosure.
附图中的元素是示意性的,没有按比例绘制。Elements in the drawings are schematic and not drawn to scale.
具体实施方式Detailed ways
为了使本公开的实施例的目的、技术方案和优点更加清楚,下面将结合附图,对本公开的实施例的技术方案进行清楚、完整的描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域技术人员在无需创造性劳动的前提下所获得的所有其它实施例,也都属于本公开保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present disclosure, not all of them. Based on the described embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without creative efforts also fall within the protection scope of the present disclosure.
除非另外定义,否则在此使用的所有术语(包括技术和科学术语)具有与本公开主题所属领域的技术人员所通常理解的相同含义。进一步将理解的是,诸如在通常使用的词典中定义的那些的术语应解释为具有与说明书上下文和相关技术中它们的含义一致的含义,并且将不以理想化或过于正式的形式来解释,除非在此另外明确定义。如在此所使用的,将两个或更多部分“连接”或“耦接”到一起的陈述应指这些部分直接结合到一起或通过一个或多个中间部件结合。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosed subject matter belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the specification and related technologies, and will not be interpreted in an idealized or overly formal manner, Unless otherwise expressly defined herein. As used herein, the statement that two or more parts are "connected" or "coupled" together shall mean that the parts are joined together directly or through one or more intermediate components.
在本公开的所有实施例中,由于金属氧化物半导体(MOS)晶体管的源极和漏极是对称的,并且N型晶体管和P型晶体管的源极和漏极之间的导通电流方向相反,因此在本公开的实施例中,将MOS晶体管的受控中间端称为控制极,将MOS晶体管的其余两端分别称为第一极和第二极。另外,诸如“第一”和“第二”的术语仅用于将一个部件(或部件的一部分)与另一个部件(或部件的另一部分)区分开。In all the embodiments of the present disclosure, since the source and the drain of the metal oxide semiconductor (MOS) transistor are symmetrical, and the conduction current direction between the source and the drain of the N-type transistor and the P-type transistor is opposite , therefore, in the embodiments of the present disclosure, the controlled intermediate terminal of the MOS transistor is called the control pole, and the remaining two ends of the MOS transistor are respectively called the first pole and the second pole. In addition, terms such as "first" and "second" are only used to distinguish one element (or a part of a element) from another element (or another part of a element).
图1示出一种NMOS LDO 100的示例性电路图。在图1的示例中,软启动电路SoftStart由电容以及对该电容充电的电流源构成,实现了输入信号SS缓慢上升,从而使得输出电压VOUT缓慢上升。其中,晶体管M0的作用是为了防止在重载(负载电流很大)下源跟随晶体管Follower的源极电压过高,进而使得误差放大器EA的输出电压过高,导致误差放大器EA工作不正常。在图1的示例中,当电源电压VDD上电完成,软启动电路Soft Start还没开启时,误差放大器EA的输出端电压为0,经过源跟随晶体管Follower产生一个栅源电压Vgs,再经过晶体管diode,又产生一个栅源电压Vgs,即Y点电压为两个栅源电压2Vgs,NMOS功率管被导通,产生一定的输出电流流过反馈电阻R1和R2,导致输出端VOUT产生一定的电压,从而造成输出电压出现“台阶”形的波动,如图2中所示的输出电压VOUT波形中被标出的部分。FIG. 1 shows an exemplary circuit diagram of an NMOS LDO 100. In the example of FIG. 1 , the soft-start circuit SoftStart is composed of a capacitor and a current source charging the capacitor, so that the input signal SS rises slowly, so that the output voltage VOUT rises slowly. Among them, the function of the transistor M0 is to prevent the source voltage of the source follower transistor Follower from being too high under heavy load (very large load current), thereby causing the output voltage of the error amplifier EA to be too high, resulting in abnormal operation of the error amplifier EA. In the example in Figure 1, when the power supply voltage VDD is powered on and the soft start circuit Soft Start is not turned on, the output voltage of the error amplifier EA is 0, and a gate-source voltage Vgs is generated through the source follower transistor Follower, and then passed through the transistor Diode, and generate a gate-source voltage Vgs, that is, the voltage at point Y is two gate-source voltages 2Vgs, the NMOS power tube is turned on, and a certain output current flows through the feedback resistors R1 and R2, resulting in a certain voltage at the output terminal VOUT , thus causing the output voltage to fluctuate in a "step" shape, as shown in the marked part of the output voltage VOUT waveform shown in FIG. 2 .
本公开的实施例提出了一种NMOS低压差线性稳压器。该NMOS低压差线性稳压器通过消除图1所示的源跟随晶体管Follower带来的栅源电压Vgs的压降,以及晶体管diode带来的栅源电压Vgs的压降,从而消除了NMOS低压差线性稳压器输出电压中的“台阶”形的波动。图3示出了根据本公开的实施例的NMOS低压差线性稳压器300的示意性框图。如图3所示,NMOS低压差线性稳压器300可包括:软启动电路310、开关控制电路320、电荷泵电路330、NMOS功率管Mn0、误差放大器EA、缓冲级BUFFER、第一晶体管M1、第一反馈电阻R1和第二反馈电阻R2。其中,所述软启动电路310的输出端耦接所述误差放大器EA的同相输入端,所述误差放大器EA的输出端耦接所述缓冲级BUFFER的输入端,所述缓冲级BUFFER的输出端耦接所述第一晶体管M1的第一极与第一节点N1,所述第一晶体管M1的控制极耦接所述第一晶体管M1的第二极与第二节点N2,所述开关控制电路320耦接在所述第一节点N1与所述第二节点N2之间,所述电荷泵电路330的输出端耦接所述NMOS功率管Mn0的控制极与所述第二节点N2,所述NMOS功率管Mn0的第一极耦接所述NMOS低压差线性稳压器300的输出端VOUT与所述第一反馈电阻R1的第一端,所述NMOS功率管Mn0的第二极耦接第一电压端V1,所述第一反馈电阻R1的第二端耦接所述第二反馈电阻R2的第一端与所述误差放大器EA的反向输入端,所述第二反馈电阻R2的第二端耦接第二电压端V2。Embodiments of the present disclosure propose an NMOS low dropout linear regulator. The NMOS low-dropout linear regulator eliminates the NMOS low-dropout voltage drop by eliminating the gate-source voltage Vgs voltage drop caused by the source-following transistor Follower shown in Figure 1, and the gate-source voltage Vgs voltage drop caused by the transistor diode. A "step" shaped fluctuation in the output voltage of a linear regulator. FIG. 3 shows a schematic block diagram of an NMOS low dropout
其中,所述电荷泵电路330用于产生偏置电压,并经由所述第二节点N2将所述偏置电压提供至所述NMOS功率管的控制极。所述软启动电路310还可耦接第一电压端V1与第二电压端V2,用于在上电后控制启动信号SS随着电源电压的上升而缓慢上升直到达到预设电压值,并将所述启动信号SS提供至所述开关控制电路320。所述开关控制电路可耦接所述软启动电路310、第一电压端V1、第二电压端V2、第三电压端V3,用于利用所述启动信号SS控制所述第一晶体管M1的通断,以控制所述NMOS功率管Mn0的通断。Wherein, the
根据本公开的实施例的NMOS低压差线性稳压器,利用软启动电路上电后产生的启动信号控制NMOS功率管的通断,当软启动电路没有工作时,控制NMOS功率管被关断,消除了NMOS低压差线性稳压器输出电压中的“台阶”形的波动。According to the NMOS low dropout linear voltage regulator of the embodiment of the present disclosure, the startup signal generated after the soft-start circuit is powered on is used to control the on-off of the NMOS power tube. When the soft-start circuit is not working, the NMOS power tube is controlled to be turned off. The "step" shaped fluctuation in the output voltage of the NMOS low dropout linear regulator is eliminated.
图4示出了根据本公开的实施例的NMOS低压差线性稳压器300的另一示意性框图。如图4所示,所述软启动电路310可包括:第一电流源IA和第一电容器C1。其中,第一电流源IA的第一端耦接所述第一电压端V1,所述第一电流源IA的第二端耦接所述第一电容器C1的第一端与所述软启动电路310的输出端,所述第一电容器C1的第二端耦接所述第二电压端V2。所述电荷泵电路330可包括:电荷泵Charg pump和电荷泵内阻R0。所述电荷泵Charg pump的输出端耦接所述电荷泵内阻R0的第一端,所述电荷泵内阻R0的第二端耦接所述电荷泵电路330的输出端。FIG. 4 shows another schematic block diagram of an NMOS low dropout
图5示出了根据本公开的实施例的NMOS低压差线性稳压器300中的开关控制电路320的示意性框图。如图5所示,开关控制电路320可包括:第二晶体管M2、第三晶体管M3、第四晶体管M4、第三电阻器R3、第四电阻器R4、第二电容器C2和施密特触发器210。其中,所述第二晶体管M2的控制极耦接所述施密特触发器210的第一输出端,所述第二晶体管M2的第一极耦接第三电压端V3,所述第二晶体管M2的第二极耦接所述第三电阻器R3的第一端。所述第三晶体管M3的控制极耦接所述施密特触发器210的第二输出端,所述第三晶体管M3的第一极耦接所述第三电阻器R3的第一端,所述第三晶体管M3的第二极耦接所述第二电压端V2。所述第三电阻器R3的第二端耦接所述第二电容器C2的第一端。所述第四晶体管M4的控制极耦接所述第二电容器C2的第一端,所述第四晶体管M4的第一极耦接所述第四电阻器R4的第一端,所述第四晶体管M4的第二极耦接所述第二节点N2。所述第四电阻器R4的第二端耦接所述第一节点N1。所述第二电容器C2的第二端耦接所述第二电压端V2。所述施密特触发器210的输入端耦接所述软启动电路310的输出端。FIG. 5 shows a schematic block diagram of the
另外,图6示出了根据本公开的实施例的施密特触发器210的示例性电路图。如图6所示,施密特触发器210可包括:第五晶体管M5、第六晶体管M6、第七晶体管M7、第八晶体管M8、第九晶体管M9、第十晶体管M10、第十一晶体管M11、第十二晶体管M12、第五电阻器R5和第六电阻器R6。其中,所述第五晶体管M5的控制极耦接所述施密特触发器210的输入端,所述第五晶体管M5的第一极耦接所述第一电压端V1,所述第五晶体管M5的第二极耦接所述第六晶体管M6的第一极与所述第九晶体管M9的第一极。所述第六晶体管M6的控制极耦接所述施密特触发器210的输入端,所述第六晶体管M6的第二极耦接所述第七晶体管M7的第一极与所述施密特触发器210的第二输出端VOP。所述第七晶体管M7的控制极耦接所述施密特触发器210的输入端,所述第七晶体管M7的第二极耦接所述第八晶体管M8的第一极与所述第十晶体管M10的第一极。所述第八晶体管M8的控制极耦接所述施密特触发器210的输入端,所述第八晶体管M8的第二极耦接所述第二电压端V2。所述第九晶体管M9的控制极耦接所述施密特触发器210的第二输出端VOP,所述第九晶体管M9的第二极耦接所述第六电阻器R6的第一端。所述第十晶体管M10的控制极耦接所述施密特触发器210的第二输出端VOP,所述第十晶体管M10的第二极耦接所述第五电阻器R5的第一端。所述第五电阻器R5的第二端耦接所述第一电压端V1。所述第六电阻器R6的第二端耦接所述第二电压端V2。所述第十一晶体管M11的控制极耦接所述施密特触发器210的第二输出端VOP,所述第十一晶体管M11的第一极耦接所述第一电压端V1,所述第十一晶体管M11的第二极耦接所述施密特触发器210的第一输出端VON。所述第十二晶体管M12的控制极耦接所述施密特触发器210的第二输出端VOP,所述第十二晶体管M12的第一极耦接所述施密特触发器210的第一输出端VON,所述第十二晶体管M12的第二极耦接所述第二电压端V2。In addition, FIG. 6 shows an exemplary circuit diagram of a
在图3至图6的示例中,从第一电压端V1输入电源电压信号VDD,第二电压端V2接地,从第三电压端V3输入偏置电压VBIAS。第一晶体管M1、第四晶体管M4、第七晶体管M7、第八晶体管M8、第十晶体管M10和第十二晶体管M12均为NMOS晶体管。第二晶体管M2、第三晶体管M3、第五晶体管M5、第六晶体管M6、第九晶体管M9和第十一晶体管M11均为PMOS晶体管。本领域技术人员应理解,基于上述发明构思对图3至图6所示的电路进行的变型也应落入本公开的保护范围之内。在该变型中,上述晶体管和电压端也可以具有与图3至图6所示的示例不同的设置。In the examples shown in FIG. 3 to FIG. 6 , the power supply voltage signal VDD is input from the first voltage terminal V1 , the second voltage terminal V2 is grounded, and the bias voltage VBIAS is input from the third voltage terminal V3 . The first transistor M1 , the fourth transistor M4 , the seventh transistor M7 , the eighth transistor M8 , the tenth transistor M10 and the twelfth transistor M12 are all NMOS transistors. The second transistor M2, the third transistor M3, the fifth transistor M5, the sixth transistor M6, the ninth transistor M9 and the eleventh transistor M11 are all PMOS transistors. Those skilled in the art should understand that modifications to the circuits shown in FIGS. 3 to 6 based on the above inventive concepts should also fall within the protection scope of the present disclosure. In this variant, the aforementioned transistors and voltage terminals may also have a different arrangement than the examples shown in FIGS. 3 to 6 .
下面结合图3至图6的示例来说明根据本公开的实施例的NMOS低压差线性稳压器300的工作过程。The working process of the NMOS low dropout
图7示出了根据本公开的实施例的NMOS低压差线性稳压器300进行软启动仿真的仿真波形示意图。在t1时刻,当电源电压上电完成,所述软启动电路310的输出端输出的启动信号SS未达到预设电压值时,施密特触发器210的第一输出端VON输出为低电平,施密特触发器210的第二输出端VOP输出为高电平,第二晶体管M2被导通,第三晶体管M3被关断,第四晶体管M4的栅端电压VG_M4为高电平,则第四晶体管M4被导通,第一晶体管M1被短路,所述NMOS功率管被关断,则输出电压VOUT接近0,如图7中的输出电压VOUT的波形中虚线标注的部分所示,即输出电压VOUT的“台阶”波形被消除。在t2时刻,软启动电路310开始工作,其输出端输出的启动信号SS达到所述所示预设电压值,施密特触发器210的第一输出端VON输出为高电平,施密特触发器210的第二输出端VOP输出为低电平,由于第二电容器C2与第四电阻器R4的存在,第四晶体管M4的栅端电压VG_M4和电流IM4缓慢下降,第四晶体管M4逐渐关断,所述第一晶体管M1被接入电路开始工作,所述NMOS功率管被缓慢开启,从而NMOS低压差线性稳压器的输出电压VOUT缓慢上升实现软启动的功能。FIG. 7 shows a schematic diagram of simulation waveforms of soft-start simulation performed by the NMOS low dropout
综上所述,根据本公开的实施例的NMOS低压差线性稳压器,利用软启动电路输出的启动信号控制第一晶体管的通断,从而控制NMOS功率管的通断,消除了在软启动电路还没开启之前,NMOS低压差线性稳压器的输出电压出现的“台阶”形波动,避免影响后续电路的正常工作。In summary, according to the NMOS low dropout linear voltage regulator of the embodiment of the present disclosure, the startup signal output by the soft-start circuit is used to control the on-off of the first transistor, thereby controlling the on-off of the NMOS power transistor, eliminating the need for soft-start Before the circuit is turned on, the output voltage of the NMOS low-dropout linear regulator fluctuates in a "step" shape to avoid affecting the normal operation of subsequent circuits.
本公开的实施例还提供了一种芯片。该芯片包括根据本公开的实施例的NMOS低压差线性稳压器。该芯片例如是用于电源管理芯片中。The embodiment of the present disclosure also provides a chip. The chip includes an NMOS low dropout linear regulator according to an embodiment of the present disclosure. This chip is used, for example, in a power management chip.
本公开的实施例还提供了一种电子设备。该电子设备包括根据本公开的实施例的芯片。该电子设备例如是智能手表、实验设备、智能屏幕等。The embodiment of the present disclosure also provides an electronic device. The electronic device includes a chip according to an embodiment of the present disclosure. The electronic device is, for example, a smart watch, an experimental device, a smart screen, and the like.
附图中的流程图和框图显示了根据本公开的多个实施例的装置和方法的可能实现的体系架构、功能和操作。在这点上,流程图或框图中的每个方框可以代表一个模块、程序段或指令的一部分,所述模块、程序段或指令的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。在有些作为替换的实现中,方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如,两个连续的方框实际上可以基本并行地执行,它们有时也可以按相反的顺序执行,这依所涉及的功能而定。也要注意的是,框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合,可以用执行规定的功能或动作的专用的基于硬件的系统来实现,或者可以用专用硬件与计算机指令的组合来实现。The flowcharts and block diagrams in the figures show the architecture, functions and operations of possible implementations of devices and methods according to various embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a module, a portion of a program segment, or an instruction that includes one or more Executable instructions. In some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks in succession may, in fact, be executed substantially concurrently, or they may sometimes be executed in the reverse order, depending upon the functionality involved. It should also be noted that each block of the block diagrams and/or flowchart illustrations, and combinations of blocks in the block diagrams and/or flowchart illustrations, can be implemented by a dedicated hardware-based system that performs the specified function or action , or may be implemented by a combination of dedicated hardware and computer instructions.
除非上下文中另外明确地指出,否则在本文和所附权利要求中所使用的词语的单数形式包括复数,反之亦然。因而,当提及单数时,通常包括相应术语的复数。相似地,措辞“包含”和“包括”将解释为包含在内而不是独占性地。同样地,术语“包括”和“或”应当解释为包括在内的,除非本文中明确禁止这样的解释。在本文中使用术语“示例”之处,特别是当其位于一组术语之后时,所述“示例”仅仅是示例性的和阐述性的,且不应当被认为是独占性的或广泛性的。Unless the context clearly dictates otherwise, as used herein and in the appended claims, the singular includes the plural and vice versa. Thus, when referring to the singular, the plural of the corresponding term will generally be included. Similarly, the words "comprise" and "include" are to be interpreted as being inclusive and not exclusive. Likewise, the terms "include" and "or" should be construed as inclusive, unless such an interpretation is expressly prohibited herein. Where the term "example" is used herein, particularly when it follows a group of terms, said "example" is exemplary and explanatory only, and should not be considered to be exclusive or inclusive .
适应性的进一步的方面和范围从本文中提供的描述变得明显。应当理解,本公开的各个方面可以单独或者与一个或多个其它方面组合实施。还应当理解,本文中的描述和特定实施例旨在仅说明的目的并不旨在限制本公开的范围。Further aspects and ranges of adaptations will become apparent from the description provided herein. It should be understood that various aspects of the present disclosure can be implemented alone or in combination with one or more other aspects. It should also be understood that the description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure.
以上对本公开的若干实施例进行了详细描述,但显然,本领域技术人员可以在不脱离本公开的精神和范围的情况下对本公开的实施例进行各种修改和变型。本公开的保护范围由所附的权利要求限定。Several embodiments of the present disclosure have been described in detail above, but obviously, those skilled in the art can make various modifications and variations to the embodiments of the present disclosure without departing from the spirit and scope of the present disclosure. The protection scope of the present disclosure is defined by the appended claims.
Claims (10)
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