CN115803873A - Protective cap, electronic device and method for manufacturing the protective cap - Google Patents

Abstract

The protective cap (4) includes a frame portion (6), a cover portion (7) covering an opening at one end of the frame portion (6), and a joint portion (8) joining the frame portion (6) and the cover portion (7). The cover part (7) is formed of quartz glass, and the frame part (6) is formed of a glass material having a thermal expansion coefficient of 30×10 ^-7 to 100×10 ^-7 /°C in a temperature range of 30 to 380°C.

Description

Protective cap, electronic device and method for manufacturing the protective cap

technical field

The invention relates to a protective cap, an electronic device and a manufacturing method of the protective cap.

Background technique

Electronic devices including electronic components such as LEDs are used in various fields such as lighting and communication for reasons such as long life and energy saving.

In such electronic devices, in order to protect the electronic components, a protective cap may be placed on the base material on which the electronic components are mounted so that the electronic components are housed inside.

For example, as disclosed in Patent Document 1, the protective cap includes a frame portion (a second member in this document) that surrounds the electronic component, and a cover portion (a cover member in this patent) that covers an opening at one end of the frame portion. ).

prior art literature

patent documents

Patent Document 1: International Publication No. 2015/190242

Contents of the invention

The problem to be solved by the invention

In addition, quartz glass has a characteristic of not easily absorbing light having wavelengths in the ultraviolet region. Therefore, when the electronic component is an ultraviolet LED or the like, from the viewpoint of improving the ultraviolet transmittance of the protective cap, it is conceivable to configure the frame portion and the cover portion with quartz glass.

However, the base material is often made of metal, metal oxide ceramics, LTCC, or metal nitride ceramics, and is generally a high expansion coefficient material. On the other hand, since the frame part is made of quartz glass, it is a low expansion coefficient material. Therefore, for example, if it is desired to use solder to join the frame to the base, the difference in expansion coefficient between the base and the frame is large, making it difficult to match the thermal expansion coefficient of the solder to the respective thermal expansion coefficients of the base and the frame. That is to say, if the thermal expansion coefficient of the solder is matched with that of the base material, the difference between the thermal expansion coefficients of the frame and the solder becomes large, and if the thermal expansion coefficient of the solder is matched with the frame, the base material and the solder The difference in thermal expansion coefficient becomes larger. As a result, residual stress is easily generated in the joint portion between the base material and the frame portion or its vicinity, and breakage (such as cracks or the like) tends to occur. If the junction part or its vicinity is damaged in this way, the airtightness of the storage space of an electronic component may fall, and there exists a possibility that an electronic component may deteriorate.

An object of the present invention is to provide a protective cap and an electronic device capable of maintaining high airtightness.

means of solving problems

In order to solve the above-mentioned problems, the protection cap of the present invention is characterized in that it includes a frame portion, a cover portion covering the opening at one end of the frame portion, and a joint portion joining the frame portion and the cover portion, and the cover portion is formed of quartz glass. The frame portion is formed of a glass material having a thermal expansion coefficient of 30×10 ^-7 to 100×10 ^-7 /°C in a temperature range of 30 to 380°C. In this way, even if the cover is made of quartz glass, the thermal expansion coefficient of the frame matches not only that of the cover but also that of the base material made of metal, metal oxide ceramics, LTCC, or metal nitride ceramics. As a result, even if the protective cap is bonded to the base material using, for example, brazing filler metal, damage is less likely to occur at the bonded portion or its vicinity, and thus high airtightness can be maintained. Here, "quartz glass" refers to an amorphous body including synthetic quartz, fused silica, and the like, and containing 90% by mass or more of SiO ₂ . "The thermal expansion coefficient in the temperature range of 30-380 degreeC" can be measured using a commercially available dilatometer, for example.

In the above configuration, it is preferable that the joint portion is formed by directly welding the frame portion and the lid portion. In this way, since other members such as solder are not interposed between the frame and the cover, the difference between the thermal expansion coefficient of the frame and the cover is somewhat large, and the frame can also be Engages securely with the cover.

In the above configuration, the glass material of the frame portion preferably has a transmittance of 10% or more at an optical path length of 0.7 mm and a wavelength of 200 nm. In this way, in addition to the cover portion made of quartz glass having high ultraviolet transmittance, the frame portion also has ultraviolet transmittance, and therefore high ultraviolet transmittance can be realized as the entire protective cap. Here, the "transmittance at an optical path length of 0.7 mm and a wavelength of 200 nm" can be measured after preparing a measurement sample with a thickness of 0.7 mm, or can be converted into an optical path length after measuring the transmittance along the thickness direction of the glass material. 0.7mm value. The "transmittance at a wavelength of 200 nm" can be measured using a commercially available spectroscopic altimeter (for example, UV-3100 manufactured by Hitachi, Ltd.).

In the above configuration, the strain point of the glass material of the frame portion is preferably 430° C. or higher. In this way, for example, when the frame portion of the protective cap is joined to the base material using brazing filler metal, it is possible to suppress generation of strain in the frame portion by heating (reflow) during brazing. Here, "strain point" means the value measured based on the method of ASTM C336.

In the above configuration, the softening point of the glass material of the frame portion is preferably 1000° C. or lower. In this way, for example, when the lid portion and the frame portion are directly welded by laser welding or the like, the frame portion tends to soften, and thus the time for joining the lid portion and the frame portion can be shortened. Here, "softening point" means the value measured based on the method of ASTM C338.

In the above configuration, the glass material of the frame portion preferably contains 50 to 80% by mass of SiO ₂ , 1 to 45% of Al ₂ O ₃ +B ₂ O ₃ , Li ₂ O+Na ₂ O+K ₂ O 0 ～25%, MgO+CaO+SrO+BaO 0～25% as the composition. Here, "Al ₂ O ₃ +B ₂ O ₃ " is the total amount of Al ₂ O ₃ and B ₂ O ₃ . "MgO+CaO+SrO+BaO" is the total amount of MgO, CaO, SrO, and BaO.

In the above configuration, it is preferable that a reflective film is formed on the inner peripheral surface of the frame portion. In this way, when an electronic device that emits light is manufactured using the protective cap, the light extraction efficiency is improved.

In the above configuration, it is preferable that an antireflection film is formed on at least one of the front surface and the rear surface of the cover. In this way, when an electronic device that emits light is manufactured using the protective cap, the light extraction efficiency is improved.

The electronic device of the present invention proposed in order to solve the above-mentioned problems is characterized by comprising: an electronic component, a base material on which the electronic component is mounted, and a protective cap having the above-mentioned configuration, and the protective cap accommodates the electronic component inside. bonded to the substrate. In this way, the same operation and effect as the corresponding configuration of the protective cap described above can be enjoyed.

In the above configuration, the protective cap and the base material are preferably bonded by solder.

In the above configuration, the electronic component is preferably an ultraviolet LED. In this way, an electronic device (light emitting device) capable of realizing high extraction efficiency of ultraviolet rays can be provided.

In order to solve the above-mentioned problems, the manufacturing method of the protective cap of the present invention is characterized in that: it has the following steps: a preparatory step, preparing a cover portion made of quartz glass, and a coefficient of thermal expansion in the temperature range of 30 to 380° C. 30×10 ^-7 ~ 100×10 ^-7 /°C frame made of glass material; in the bonding process, the cover and the frame are placed in contact with each other so as to cover one end opening of the frame. The contact portion of the frame is irradiated with laser light, whereby the cover and the frame are directly welded. In this way, it is possible to enjoy the same effect as that of the configuration of the protective cap corresponding to that described above.

Invention effect

According to the present invention, a protective cap and an electronic device capable of maintaining high airtightness can be provided.

Description of drawings

FIG. 1 is a cross-sectional view showing an electronic device according to a first embodiment.

Fig. 2 is a cross-sectional view along line A-A of Fig. 1 .

FIG. 3 is a graph showing transmittance curves of BU-41 and quartz glass at wavelengths of 200 to 600 nm.

4 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the first embodiment.

5 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the first embodiment.

6 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the first embodiment.

7 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the first embodiment.

8 is a cross-sectional view showing an electronic device of a second embodiment.

9 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the second embodiment.

10 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the second embodiment.

FIG. 11 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the second embodiment.

FIG. 12 is a plan view showing a manufacturing process of the electronic device according to the second embodiment.

Fig. 13 is a cross-sectional view showing a frame portion of a third embodiment.

Detailed ways

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the same code|symbol is attached|subjected to the component corresponding to each embodiment in some cases, and overlapping description is abbreviate|omitted. When only a part of the configuration is described in each embodiment, the configurations of other embodiments described above can be applied to other parts of the configuration. In addition, not only the combination of the configurations explicitly described in the description of the respective embodiments, but also the configurations of the plurality of embodiments may be partially combined, even if not explicitly stated, as long as it does not hinder the combination.

(first embodiment)

1 and 2 illustrate an electronic device 1 according to a first embodiment of the present invention.

The electronic device 1 of the present embodiment includes: an electronic component 2, a base material 3 on which the electronic component 2 is mounted, a protective cap 4 arranged on the base material 3 so that the electronic component 2 is accommodated inside, and a base material 3 and a protective cover. The engaging portion 5 where the cap 4 engages. It should be noted that, in the following description, for convenience, the side of the base material 3 is described as the bottom and the side of the protective cap 4 is described as the top, but the up and down directions are not limited thereto.

The electronic component 2 is not particularly limited, and examples thereof include optical devices such as laser modules, LEDs, photosensors, imaging devices, and optical switches. In this embodiment, the electronic component 2 is an ultraviolet LED (light emitting element), and the electronic device 1 is a light emitting device.

The substrate 3 is made of, for example, metal, metal oxide ceramics, LTCC or metal nitride ceramics. As a metal, copper, metal silicon, etc. are mentioned, for example. As metal oxide ceramics, alumina etc. are mentioned, for example. As LTCC, the LTCC which sintered the composite powder containing crystallizable glass and a refractory filler etc. are mentioned, for example. Examples of metal nitride ceramics include aluminum nitride and the like. In this embodiment, the base material 3 is made of aluminum nitride. The thermal expansion coefficient of aluminum nitride in the temperature range of 30 to 380°C is, for example, 46×10 ⁻⁷ /°C. In addition, in the present embodiment, the base material 3 is a plate-shaped body in which both the upper surface 3 a and the lower surface 3 b are formed of flat surfaces. It should be noted that, the base material 3 may be provided with a concave portion on the upper surface 3 a where the electronic component 2 is mounted.

The protective cap 4 includes a frame portion 6 , a cover portion 7 covering an opening at one end of the frame portion 6 , and a joining portion 8 for joining the frame portion 6 and the cover portion 7 . It should be noted that it is preferable to form various functional films on the surface of the protective cap 4. For example, in order to reduce light reflection loss, an antireflection film is preferably formed on at least one of the upper and lower surfaces 7a, 7b of the cover part 7. The antireflection film is preferably formed on the upper and lower surfaces 7a, 7b of the cover portion 7, respectively. The antireflection film may be formed only on the part corresponding to the through hole H of the frame part 6 among at least one of the upper and lower surfaces 7a, 7b of the cover part 7, or may be formed on the entire surface. As the antireflection film, for example, a dielectric multilayer film in which low-refractive-index layers with a relatively low refractive index and high-refractive-index layers with a relatively high refractive index are alternately laminated is preferable. This makes it easy to control the reflectance at each wavelength. The antireflection film can be formed by, for example, sputtering, CVD, or the like. The reflectance of the antireflection film in the wavelength band (for example, 250 to 350 nm) of light emitted from the electronic component 2 is preferably, for example, 1% or less, 0.5% or less, 0.3% or less, particularly 0.1% or less.

The frame portion 6 is a cylindrical body having a through hole H along the thickness direction (vertical direction) at the center. The frame portion 6 surrounds the electronic component 2 accommodated in the space corresponding to the through hole H. As shown in FIG. In the illustrated example, the frame portion 6 is constituted by a square cylinder, but it may be in other shapes such as a cylinder. It should be noted that, for the inner wall surface 6c of the frame portion 6, in order to improve the extraction efficiency of the ultraviolet rays that pass through the cover portion 7, the inner wall surface is changed from the inner wall surface 6a toward the upper end surface 6a side from the lower end surface 6b side of the frame portion 6. Constructed with inclined surfaces that move outward. The inner wall surface 6c may be a non-inclined surface (vertical surface). The through hole H can be formed by subjecting the material of the frame portion 6 to etching processing, laser processing, sandblasting, or the like.

The frame portion 6 is made of a glass material having a thermal expansion coefficient of 30×10 ^-7 to 100×10 ^-7 /°C in a temperature range of 30 to 380°C. The thermal expansion coefficient of the frame portion 6 is preferably 40×10 ^-7 /°C or higher, 50×10 ^-7 /°C or higher, 60×10 ^-7 /°C or higher, particularly preferably 70×10 ^-7 /°C or higher. In addition, the thermal expansion coefficient of the frame portion 6 is preferably 95×10 ⁻⁷ /°C or less, particularly preferably 90×10 ⁻⁷ /°C or less. In this way, the thermal expansion coefficient of the frame portion 6 matches the thermal expansion coefficient of the base material 3 made of metal, metal nitride ceramics, or the like. As a result, even if the frame portion 6 is bonded to the base material 3 using, for example, brazing filler metal, damage is less likely to occur at the bonding portion 8 or its vicinity, and thus high airtightness can be maintained.

The glass material of the frame portion 6 is preferably ultraviolet-transmissive glass. Specifically, in the glass material of the frame portion 6, the transmittance at an optical path length of 0.7 mm and a wavelength of 200 nm is preferably 10% or more, 20% or more, 30% or more, 40% or more, 50% or more, 60% or more, 70% or more, particularly preferably 80% or more. In addition, in the glass material of the frame portion 6, the transmittance at an optical path length of 0.7 mm and a wavelength of 250 nm is preferably 50% or more, 60% or more, 70% or more, particularly preferably 80% or more. In addition, in the glass material of the frame portion 6, when the transmittance at an optical path length of 0.7 mm and a wavelength of 250 nm is T ₂₅₀ , and the transmittance at an optical path length of 0.7 mm and a wavelength of 300 nm is T ₃₀₀ , T ₂₅₀ / The value of T ₃₀₀ is preferably 0.3 or more, 0.4 or more, 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, 0.85 or more, particularly preferably 0.9 or more. In this way, although the transmittance of ultraviolet rays is inferior to that of quartz glass, light emitted from the electronic component 2 formed of ultraviolet LEDs can be transmitted without problems, and the extraction efficiency of ultraviolet rays can be maintained at a high level.

In the glass material of the frame portion 6, the strain point is preferably 430°C or higher, 460°C or higher, 480°C or higher, 500°C or higher, 520°C or higher, 530°C or higher, particularly preferably 550°C or higher. In this way, when the frame portion 6 is joined to the base material 3 using brazing filler metal, it is possible to suppress the generation of strain in the frame portion 6 due to heating during brazing (for example, about 300° C.).

In the glass material of the frame portion 6, the softening point is preferably 1000°C or lower, 950°C or lower, 900°C or lower, 850°C or lower, particularly preferably 800°C or lower. In this way, when the frame portion 6 and the cover portion 7 are directly welded by laser bonding or the like, the frame portion 6 is easily softened, and thus the bonding time can be shortened.

In the glass material of the frame portion 6, the temperature at 10 ^2.5 dPa·s is preferably 1580°C or lower, 1550°C or lower, 1520°C or lower, 1500°C or lower, 1480°C or lower, particularly preferably 1470°C or lower. When the temperature at 10 ^2.5 dPa·s is too high, the meltability decreases, and the production cost of glass tends to increase. Here, the "temperature at 10 ^2.5 dPa·s" can be measured by the platinum ball pulling method. It should be noted that the temperature at 10 ^2.5 dPa·s corresponds to the melting temperature, and the lower the temperature, the better the meltability.

The liquidus temperature of the glass material of the frame portion 6 is preferably less than 1150°C, 1120°C or lower, 1100°C or lower, 1080°C or lower, 1050°C or lower, 1030°C or lower, 980°C or lower, 960°C or lower, 950°C or lower, particularly preferably Below 940°C. In addition, the liquidus viscosity of the glass material of the frame portion 6 is preferably 10 ^4.0 dPa·s or more, 10 ^4.3 dPa·s or more, 10 ^4.5 dPa·s or more, 10 ^4.8 dPa·s or more, 10 5.1 dPa·s or more, 10 ^5.1 dPa·s or more. ^5.3 dPa·s or more, particularly preferably 10 ^5.5 dPa·s or more. Thereby, devitrification resistance improves. Here, the "liquidus temperature" refers to the glass powder that passed through the standard sieve of 30 mesh (500 μm) and remained in the 50 mesh (300 μm) into the platinum boat, and kept it in the temperature gradient furnace for 24 hours. The value obtained by measuring the precipitation temperature. The "liquidus viscosity" is a value obtained by measuring the viscosity of glass at the liquidus temperature by the platinum ball pulling method.

The Young's modulus of the glass material of the frame portion 6 is preferably 55 GPa or more, 60 GPa or more, 65 GPa or more, particularly preferably 70 GPa or more. When the Young's modulus is too low, deformation, warpage, and breakage of the frame portion 6 tend to occur. Here, "Young's modulus" means the value measured by the resonance method.

Among the glass materials for the frame portion 6, the glass composition is preferably 50 to 80% of SiO ₂ , 1 to 45% of Al ₂ O ₃ +B ₂ O ₃ , and Li ₂ O+Na ₂ O+K ₂ in mass %. O 0-25%, MgO+CaO+SrO+BaO 0-25%. The reason for limiting content of each component as mentioned above is shown below. In addition, in the description of the content of each component, unless otherwise specified, the expression of % means mass %.

SiO ₂ is a main component forming the skeleton of glass. The content of SiO ₂ is preferably 50-80%, 55-75%, 58-70%, particularly preferably 60-68%. When the content of SiO ₂ is too small, Young's modulus and acid resistance tend to decrease. On the other hand, when the content of SiO ₂ is too large, the high-temperature viscosity becomes high, the meltability tends to decrease, and devitrified crystals such as cristobalite tend to precipitate, and the liquidus temperature tends to rise.

Al ₂ O ₃ and B ₂ O ₃ are components that improve devitrification resistance. The content of Al ₂ O ₃ +B ₂ O ₃ is preferably 1 to 40%, 5 to 35%, 10 to 30%, particularly preferably 15 to 25%. When the content of Al ₂ O ₃ +B ₂ O ₃ is too small, glass tends to devitrify. On the other hand, when the content of Al ₂ O ₃ +B ₂ O ₃ is too high, the component balance of the glass composition is impaired, and the glass tends to devitrify conversely.

Al ₂ O ₃ is a component that increases Young's modulus and suppresses phase separation and devitrification. The content of Al ₂ O ₃ is preferably 1 to 20%, 3 to 18%, particularly preferably 5 to 16%. When the content of Al ₂ O ₃ is too small, the Young's modulus tends to decrease, and the glass tends to be phase-separated and devitrified. On the other hand, when the content of Al ₂ O ₃ is too large, the high-temperature viscosity becomes high, and the meltability tends to decrease.

B ₂ O ₃ is a component that improves meltability and devitrification resistance, and is a component that improves ease of damage and increases strength. The content of B ₂ O ₃ is preferably 3 to 25%, 5 to 22%, 7 to 19%, particularly preferably 9 to 16%. When the content of B ₂ O ₃ is too small, meltability and devitrification resistance tend to decrease, and resistance to hydrofluoric acid-based chemical solutions tends to decrease. On the other hand, when there is too much content _{of B2O3} , Young's modulus and acid resistance will fall easily.

Li ₂ O, Na ₂ O, and K ₂ O are components that reduce high-temperature viscosity, remarkably improve meltability, and contribute to initial melting of glass raw materials. The content of Li ₂ O+Na ₂ O+K ₂ O is preferably 0 to 25%, 1 to 20%, 4 to 15%, particularly preferably 7 to 13%. When the content of Li ₂ O+Na ₂ O+K ₂ O is too small, the meltability tends to decrease. On the other hand, when there is too much content of _Na2O , there exists a possibility that a thermal expansion coefficient may become high unduly.

Li ₂ O is a component that reduces high-temperature viscosity, remarkably improves meltability, and contributes to initial melting of glass raw materials. The content of Li ₂ O is preferably 0 to 5%, 0 to 3%, and 0 to 1%, particularly preferably 0 to 0.1%. When the content of Li ₂ O is too small, the meltability tends to decrease, and the thermal expansion coefficient may become unduly low. On the other hand, when the content of Li ₂ O is too high, the glass tends to separate into phases.

Na ₂ O is a component that reduces high-temperature viscosity, remarkably improves meltability, and contributes to initial melting of glass raw materials. Furthermore, it is a component for adjusting the coefficient of thermal expansion. The content of Na ₂ O is preferably 0 to 25%, 1 to 20%, 3 to 18%, 5 to 15%, particularly preferably 7 to 13%. When there is too little content of _Na2O , meltability will fall easily, and there exists a possibility that a thermal expansion coefficient may become low unduly. On the other hand, when there is too much content of _Na2O , there exists a possibility that a thermal expansion coefficient may become high unduly.

K ₂ O is a component that reduces high-temperature viscosity, remarkably improves meltability, and contributes to initial melting of glass raw materials. Furthermore, it is a component for adjusting the coefficient of thermal expansion. The content of K ₂ O is preferably 0 to 15%, 0.1 to 10%, particularly preferably 1 to 5%. When there is too much content of _K2O , there exists a possibility that a thermal expansion coefficient may become high unduly.

MgO, CaO, SrO, and BaO are components that lower high-temperature viscosity and improve meltability. The content of MgO+CaO+SrO+BaO is preferably 0 to 25%, 0 to 15%, 0.1 to 12%, or 1 to 5%. When the content of MgO+CaO+SrO+BaO is too high, glass is likely to devitrify.

MgO is a component that lowers high-temperature viscosity and improves meltability, and is a component that remarkably increases Young's modulus among alkaline earth metal oxides. The content of MgO is preferably 0-10%, 0-8%, 0-5%, particularly preferably 0-1%. When there is too much content of MgO, devitrification resistance will fall easily.

CaO is a component that lowers high-temperature viscosity and remarkably improves meltability. In addition, in alkaline earth metal oxides, since introduction of raw materials is relatively cheap, it is a component that reduces the cost of raw materials. The content of CaO is preferably 0 to 15%, 0.5 to 10%, particularly preferably 1 to 5%. When there is too much content of CaO, glass will become devitrified easily. In addition, when the content of CaO is too small, it becomes difficult to enjoy the said effect.

SrO is a component that improves devitrification resistance. The content of SrO is preferably 0 to 7%, 0 to 5%, or 0 to 3%, particularly preferably 0% or more and less than 1%. When the content of SrO is too high, the glass tends to devitrify.

BaO is a component that improves devitrification resistance. The content of BaO is preferably 0 to 7%, 0 to 5%, 0 to 3%, 0% or more and less than 1%. When the content of BaO is too high, the glass is likely to devitrify.

In addition to the above-mentioned components, other components may also be introduced as optional components. In addition, from the viewpoint of reliably enjoying the effect of the present invention, the content of other components other than the above-mentioned components is preferably 10% or less, 5% or less, particularly 3% or less in total.

ZnO is a component that improves meltability, but if contained in a large amount in the glass composition, the glass is likely to devitrify. Therefore, the content of ZnO is preferably 0 to 5%, 0 to 3%, 0 to 1%, 0% or more and less than 1%, particularly preferably 0 to 0.1%.

ZrO ₂ is a component that improves acid resistance, but if it is contained in a large amount in the glass composition, the glass will easily devitrify. Therefore, the content of ZrO ₂ is preferably 0 to 5%, 0 to 3%, 0 to 1%, 0 to 0.5%, particularly preferably 0.001 to 0.2%.

Fe ₂ O ₃ and TiO ₂ are components that lower the transmittance in the deep ultraviolet region. The content of Fe ₂ O ₃ +TiO ₂ is preferably 100 ppm or less, 80 ppm or less, 60 ppm or less, 0.1 to 40 ppm or less, particularly preferably 1 to 20 ppm. If the content of Fe ₂ O ₃ +TiO ₂ is too high, the glass will be colored and the transmittance in the deep ultraviolet region will tend to decrease. It should be noted that when the content of Fe ₂ O ₃ +TiO ₂ is too small, high-purity glass raw materials must be used, resulting in high cost of batch materials.

Fe ₂ O ₃ is a component that lowers the transmittance in the deep ultraviolet region. The content of Fe ₂ O ₃ is preferably 100 ppm or less, 80 ppm or less, 60 ppm or less, 40 ppm or less, 20 ppm or less, 10 ppm or less, particularly preferably 1 to 8 ppm. If the content of Fe ₂ O ₃ is too high, the glass will be colored and the transmittance in the deep ultraviolet region will tend to decrease. It should be noted that when the content of Fe ₂ O ₃ is too small, high-purity glass raw materials must be used, resulting in high cost of batch materials.

Fe ions in iron oxide exist in the state of Fe ²⁺ or Fe ³⁺ . When the ratio of Fe ²⁺ is too small, the transmittance of deep ultraviolet light tends to decrease. Therefore, the mass ratio of Fe ²⁺ /(Fe ²⁺ +Fe ³⁺ ) in iron oxide is preferably 0.1 or more, 0.2 or more, 0.3 or more, 0.4 or more, particularly preferably 0.5 or more.

TiO ₂ is a component that lowers the transmittance in the deep ultraviolet region. The content of TiO ₂ is preferably 100 ppm or less, 80 ppm or less, 60 ppm or less, 40 ppm or less, 20 ppm or less, 10 ppm or less, particularly preferably 0.5 to 5 ppm. When the content of TiO ₂ is too high, the glass is colored and the transmittance in the deep ultraviolet region tends to decrease. It should be noted that when the content of TiO ₂ is too small, high-purity glass raw materials must be used, resulting in high batch costs.

Sb ₂ O ₃ is a component functioning as a clarifying agent. The content of Sb ₂ O ₃ is preferably 1000 ppm or less, 800 ppm or less, 600 ppm or less, 400 ppm or less, 200 ppm or less, 100 ppm or less, particularly preferably less than 50 ppm. When the content of Sb ₂ O ₃ is too high, the transmittance in the deep ultraviolet region tends to decrease.

SnO ₂ is a component that functions as a clarifying agent. The content of SnO ₂ is preferably 2000 ppm or less, 1700 ppm or less, 1400 ppm or less, 1100 ppm or less, 800 ppm or less, 500 ppm or less, 200 ppm or less, particularly preferably 100 ppm or less. When the content of SnO ₂ is too high, the transmittance in the deep ultraviolet region tends to decrease.

F ₂ , Cl ₂ and SO ₃ are components functioning as clarifiers. The content of F ₂ +Cl ₂ +SO ₃ is preferably 10 to 10000 ppm. The preferred lower limit range of _F2 + _Cl2 + _SO3 is 10ppm or more, 20ppm or more, 50ppm or more, 100ppm or more, 300ppm or more, especially 500ppm or more, and the preferred upper limit range is 3000ppm or less, 2000ppm or less, 1000ppm or less, especially Below 800ppm. In addition, each of F ₂ , Cl ₂ , and SO ₃ has a preferable lower limit range of 10 ppm or more, 20 ppm or more, 50 ppm or more, 100 ppm or more, 300 ppm or more, especially 500 ppm or more, and a preferable upper limit range of 3000 ppm or less, 2000 ppm or less, and 1000 ppm or less. , Especially below 800ppm. When there are too few contents of these components, it becomes difficult to exhibit a clarification effect. On the other hand, when there are too many contents of these components, there exists a possibility that clear gas may remain as bubbles in glass.

The glass material for the frame portion 6 can be produced, for example, by preparing various glass raw materials to obtain a glass batch, melting the glass batch, clarifying and homogenizing the obtained molten glass, and molding it into a predetermined shape. shape made.

In the manufacturing process of the glass material of the frame part 6, it is preferable to use a reducing agent as a part of glass raw material. In this way, Fe ³⁺ contained in the glass is reduced, and the transmittance of deep ultraviolet rays is improved. As the reducing agent, materials such as wood powder, carbon powder, metal aluminum, metal silicon, and aluminum fluoride can be used, among which metal silicon and aluminum fluoride are preferable.

In the manufacturing process of the glass material for the frame portion 6, metal silicon is preferably used as a part of the glass raw material, and the amount added is preferably 0.001 to 3% by mass, 0.005 to 2% by mass, or 0.01% to the total mass of the glass batch. ~ 1% by mass, especially 0.03 ~ 0.1% by mass. When the amount of metal silicon added is too small, the Fe ³⁺ contained in the glass will not be reduced, and the transmittance of deep ultraviolet rays will easily decrease. On the other hand, when the amount of metallic silicon added is too large, the glass tends to be colored brown.

Aluminum fluoride (AlF ₃ ) is also preferably used as a part of the glass raw material, and the added amount is preferably 0.01 to 5% by mass, 0.05 to 4% by mass, or 0.1 to 3% by mass in terms of F ₂ relative to the total mass of the glass batch. % by mass, 0.2 to 2% by mass, and 0.3 to 1% by mass. On the other hand, when the amount of aluminum fluoride added is too large, F ₂ gas may remain in the form of bubbles in the glass. When the amount of aluminum fluoride added is too small, the Fe ³⁺ contained in the glass is not reduced, and the transmittance of deep ultraviolet rays tends to decrease.

In the manufacturing process of the glass material of the frame part 6, it is preferable to form it into a flat plate shape by the down-draw method, especially the overflow down-draw method. The overflow down-draw method is to make the molten glass overflow from both sides of the heat-resistant launder-like structure, make the overflowing molten glass join at the lower top of the launder-like structure, and stretch and form the glass plate along the bottom. Forming method. In the overflow downdraw method, the surface to be the surface of the glass sheet is formed in a state of a free surface without contacting the launder-shaped refractory. Therefore, it is easy to manufacture a thin glass plate, and even without polishing the surface, variations in plate thickness can be reduced. As a result, the manufacturing cost of a glass plate can be reduced. It should be noted that the structure and material of the gutter-shaped structure are not particularly limited as long as desired dimensions and surface precision can be achieved. In addition, there is no particular limitation on the method of applying force when stretching downward. For example, a method of rotating and extending a heat-resistant roller having a sufficiently large width in contact with the glass may be used, or a method of extending a plurality of pairs of heat-resistant rollers in contact with only the vicinity of the end surface of the glass. Methods.

As a method for forming the glass material of the frame portion 6, other than the overflow down-draw method, for example, the slit down-draw method, re-draw method, float method, etc. can be selected.

As the glass material of the frame part 6, specifically, for example, BU-41 manufactured by NEC Glass Co., Ltd. can be used. The thermal expansion coefficient of BU-41 in the temperature range of 30 to 380°C is, for example, 42×10 ⁻⁷ /°C.

The thickness (dimension in the vertical direction) of the frame portion 6 is preferably larger than the electronic component 2 , preferably 0.01 to 1 mm larger than the electronic component 2 , more preferably 0.05 to 0.5 mm larger, and most preferably 0.1 to 0.2 mm larger than the electronic component 2 .

The cover 7 is made of quartz glass. Quartz glass includes fused silica and synthetic quartz. The thermal expansion coefficient of fused silica glass in the temperature range of 30 to 380°C is, for example, 6.3×10 ^-7 /°C, and the thermal expansion coefficient of synthetic silica glass in the temperature range of 30 to 380°C is, for example, 4.0×10 ^-7 /°C. In addition, in this embodiment, the cover part 7 is a plate-shaped body which both the upper surface 7a and the lower surface 7b are comprised by the plane.

The thickness (dimension in the vertical direction) of the cover portion 7 is preferably 0.1 to 1.0 mm, more preferably 0.2 to 0.8 mm, and most preferably 0.3 to 0.6 mm.

As shown in FIG. 2 , in the present embodiment, the joint portion 8 joining the frame portion 6 and the cover portion 7 is formed of a welded portion 9 in which the frame portion 6 and the cover portion 7 are directly welded. The welded portion 9 is formed by laser bonding. Specifically, the welded portion 9 is formed by melting at least one of the frame portion 6 and the lid portion 7 in the laser irradiation region, and then solidifying the melted portion. That is, the welded portion 9 is made of, for example, at least one material of the frame portion 6 and the cover portion 7 , and preferably does not substantially contain materials other than the frame portion 6 and the cover portion 7 .

A plurality of welded portions 9 (two in the illustration) are formed in concentric rings along the through hole H, and may be one. The plurality of welded portions 9 are separated from each other in the radial direction, but may overlap in the radial direction. Each welded portion 9 is formed in a quadrangular ring shape in plan view, but is not limited thereto, and may be formed in a ring shape other than the ring shape.

The welded portion 9 is formed continuously in the thickness direction to straddle the frame portion 6 and the cover portion 7 . It should be noted that, in the present embodiment, there is no interface between the frame portion 6 and the cover portion 7 inside the welded portion 9 . Of course, an interface may remain between the frame portion 6 and the lid portion 7 inside the welded portion 9 .

The width S1 of the welded portion 9 is preferably 10 to 200 μm, more preferably 10 to 100 μm, and most preferably 10 to 50 μm. The thickness S2 of the welded portion 9 is preferably 10 to 200 μm, more preferably 10 to 150 μm, and most preferably 10 to 100 μm.

The maximum value of the residual stress in the planar direction of the welded portion 9 is preferably 10 MPa or less, more preferably 7 MPa or less, and most preferably 5 MPa or less. The maximum value of the residual stress in the planar direction is measured on a glass plate having a size of 10 mm × 10 mm or more using a birefringence measuring machine: ABR-10A manufactured by Uniopt Co., Ltd., and converted to The maximum value in the case of residual stress in the plane direction. In addition, by measuring the optical birefringence, that is, the measurement of the optical path difference of orthogonal linearly polarized waves, the residual stress value in the glass plate can be estimated, and the deviation stress F (MPa) caused by the residual stress can be expressed as F=D/ CW expression. "D" is the optical path difference (nm), "W" is the distance (cm) through which the polarized wave passes, and "C" is the photoelastic constant (proportional constant), usually 20 to 40 (nm/cm)/(MPa) value. In addition, there exist tensile stress and compressive stress in the residual stress of a plane direction, and in the said content, the absolute value of both was evaluated.

The junction part 5 which joins the frame part 6 and the base material 3 is not specifically limited, In this embodiment, the metallization layer 10 and the solder layer 11 are provided in this order from the lower end surface 6b side of the frame part 6. The metallization layer 10 is a metal film formed on the lower end surface 6b of the frame portion 6 of the protective cap 4 by vapor deposition, sputtering, etc., and has a function of improving the adhesion with the solder layer 11 . As the metallization layer 10 , for example, Cr, Ti, Ni, Pt, Au, Co, and alloy layers containing these metals, or multilayer films of these metals and alloys, or the like can be used. As the solder layer (brazing material) 11, layers such as Au, Sn, Ag, Pb, and alloys containing these metals, that is, Au—Sn based solder, Sn—Ag based solder, and Pb based solder can be used. The thermal expansion coefficient of the Au—Sn-based solder in the temperature range of 30 to 380° C. is, for example, 175×10 ⁻⁷ /° C.

FIG. 3 shows transmittance curves of BU-41 (manufactured by NEC Glass Co., Ltd.) and quartz glass at a wavelength of 200 to 600 nm. As shown in the figure, quartz glass has a transmittance of 90% or more without a decrease in transmittance due to an increase in thickness in the deep ultraviolet region (for example, a wavelength region of 200 to 350 nm). On the other hand, BU-41 has a transmittance of 84% or more at a thickness of 0.2 mm in the deep ultraviolet region, and has a transmittance of 70% or more at a thickness of 0.5 mm. That is, BU-41 has good transmittance although it is slightly inferior to quartz glass in the deep ultraviolet region. In the state of the electronic device (light-emitting device) 1, specifically, the extraction efficiency of ultraviolet rays (the output of the electronic component (ultraviolet LED) 2) when both the cover part 7 and the frame part 6 are made of quartz glass with a thickness of 0.6 magnification) was 89% on average, and the extraction efficiency of ultraviolet rays was 88% on average when the lid 7 was made of quartz glass with a thickness of 0.6 mm and the frame 6 was made of BU-41 with a thickness of 0.6 mm. Therefore, even if the cover part 7 is made of quartz glass and the frame part 6 is made of an ultraviolet-transmissive glass material (for example, BU-41) other than quartz glass, the light extraction efficiency in the ultraviolet region can be maintained at a high level. In addition, in this case, since the thermal expansion coefficient of the frame portion 6 matches that of the base material 3, even if the frame portion 6 is bonded to the base material 3 using solder or the like, damage is less likely to occur at the bonding portion 5 or its vicinity. , can maintain high air tightness.

4 to 7 illustrate a method of manufacturing the electronic device 1 according to the first embodiment of the present invention.

In order to obtain the protective cap 4 , the manufacturing method of the electronic device 1 according to the present embodiment includes a first joining step of joining the cover portion 7 and the frame portion 6 , and a step of joining the base material 3 on which the electronic component 2 is mounted and the protective cap 4 . Second bonding process.

In the first bonding step, first, as shown in FIG. 4 , the cover portion 7 and the frame portion 6 in which the metallization layer 10 and the solder layer 11 are formed are prepared. Next, the lower surface 7 b of the cover portion 7 is brought into direct contact with the upper end surface 6 a of the frame portion 6 . In this state, as shown in FIG. 5 , the laser beam L is focused and irradiated by the laser irradiation device 12 on the contact portion between the lid portion 7 and the frame portion 6 . The laser light L is irradiated from at least one of the cover portion 7 and the frame portion 6 . In this embodiment, the laser light L is irradiated from the cover part 7 side. Thereby, the contact part is welded to form the welded part 9 , and the frame part 6 and the cover part 7 are bonded by the welded part 9 .

The arithmetic mean roughness Ra of the lower surface 7b of the lid portion 7 and the upper end surface 6a of the frame portion 6 is preferably 2.0 nm or less, more preferably 1.0 nm or less, still more preferably 0.5 nm or less, and most preferably 0.2 nm or less. The arithmetic mean roughness Ra refers to a value measured by a method based on JIS B0601:2001. In this way, the lid portion 7 and the frame portion 6 are closely adhered to each other by the intermolecular force (optical contact) between the bonding surfaces, so that the handling property before laser bonding is improved.

As the laser light L, an ultrashort pulse laser having a pulse width of the picosecond order or femtosecond order can be suitably used.

The wavelength of the laser light L is not particularly limited as long as it is a wavelength transmitted through the glass member, and is, for example, preferably 400 to 1600 nm, more preferably 500 to 1300 nm. The pulse width of the laser light L is preferably 10 ps or less, more preferably 5 ps or less, and most preferably 200 fs to 3 ps. The focusing diameter of the laser light L is preferably 50 μm or less, more preferably 30 μm or less, and preferably 20 μm or less.

The repetition frequency of the laser light L must be such that continuous heat accumulation occurs, and specifically, it is preferably 100 kHz or higher, more preferably 200 kHz or higher, and still more preferably 500 kHz or higher.

In addition, it is preferable to utilize a method (burst mode) in which one pulse is divided into a plurality of pulses and the pulse interval is further shortened to irradiate. Thereby, heat accumulation is easy to generate|occur|produce, and the junction part 8 can be formed stably.

As shown in FIG. 6 , the laser light L is scanned so as to draw a circular track T along the through hole H outside the through hole H. As shown in FIG. In this case, the laser light L scans so that the irradiation area R overlaps the circular track T and goes around the circular track T once. Alternatively, the laser light L scans around the circular track T a plurality of times. In addition, when forming the welding part 9 in multiple concentric ring shapes, the circular trajectory T of the scanning laser light L is also set in multiple concentric ring shapes.

In addition, the junction part can be formed in a frame shape by making four straight lines intersect in a square shape so as to surround the through hole H. FIG. Thereby, a plurality of protective caps 4 can be fabricated at one time, and therefore, the manufacturing efficiency of the electronic device 1 can be improved.

It should be noted that the case where the metallization layer 10 and the solder layer 11 are formed on the frame portion 6 in advance in the above-mentioned first bonding step has been described, but they may be formed after the first bonding step (the cover portion 7 and the frame portion These layers 10 , 11 are formed on the frame part 6 after joining the part 6 .

In the second bonding step, first, as shown in FIG. 7 , the protective cap 4 obtained in the first bonding step and the base material 3 on which the electronic component 2 is mounted are prepared. Next, the lower end surface 6 b of the frame portion 6 is brought into contact with the upper surface 3 a of the base material 3 via the metallization layer 10 and the solder layer 11 . By heating in this state, the solder layer 11 is softened and flowed (reflowed), and the frame portion 6 and the base material 3 are bonded via the solder layer 11 . It should be noted that the solder layer 11 may be heated using a heating furnace, or may be heated using a laser.

(second embodiment)

FIG. 8 illustrates an electronic device 1 according to a second embodiment of the present invention. In the second embodiment, the structure of the joining portion 5 joining the frame portion 6 and the base material 3 is different from that of the first embodiment.

In the present embodiment, the joining portion 5 is formed of a welded portion 21 in which the frame portion 6 and the base material 3 are directly welded. The welded portion 21 is formed by laser bonding. Specifically, the welded portion 21 is formed by melting at least one of the frame portion 6 and the base material 3 in the laser irradiation region, and then solidifying the melted portion. That is, the welded portion 21 is composed of, for example, at least one material of the frame portion 6 and the base material 3 , and preferably does not substantially contain materials other than the frame portion 6 and the base material 3 .

The other configurations of the welded portion 21 are the same as those of the welded portion 9 described in the first embodiment, and thus detailed description thereof will be omitted.

9 to 12 illustrate a method of manufacturing the electronic device 1 according to the second embodiment of the present invention.

In order to obtain the protective cap 4, the manufacturing method of the electronic device 1 according to this embodiment includes: a first bonding step of bonding the cover portion 7 to the frame portion 6; and a second bonding step of bonding the base material 3 on which the electronic component 2 is mounted to The protective cap 4 is engaged.

As shown in FIGS. 9 and 10 , the first bonding step is the same as the first bonding step described in the first embodiment, in which the lid portion 7 and the frame portion 6 are directly welded together using the laser light L emitted from the laser irradiation device 12 . process. In addition, the metallization layer 10 and the solder layer 11 are not formed in the frame part 6, and the lower end surface 6b of the frame part 6 is exposed.

As shown in FIGS. 11 and 12 , in the second bonding step, first, the lower end surface 6 b of the frame portion 6 of the protective cap 4 obtained in the first bonding step is brought into direct contact with the upper surface 3 a of the base material 3 . In this state, the laser beam L is focused and irradiated on the contact portion between the frame portion 6 and the base material 3 by the laser irradiation device 12 . The laser light L is irradiated from the side of the frame portion 6 through which the laser light L passes among the frame portion 6 and the base material 3 . Thus, the contact portion is welded to form the welded portion 21 , and the frame portion 6 and the base material 3 are bonded by the welded portion 21 .

The arithmetic mean roughness Ra of the lower end surface 6b of the frame portion 6 and the upper surface 3a of the substrate 3 is preferably 2.0 nm or less, more preferably 1.0 nm or less, still more preferably 0.5 nm or less, and most preferably 0.2 nm or less. In this way, the frame portion 6 and the base material 3 are brought into close contact with each other by the intermolecular force between the bonding surfaces, so that the handleability before laser bonding is improved.

Regarding various conditions such as the type, wavelength, and scanning method of the laser light L used in the second bonding step, the same conditions as those in the first bonding step described in the first embodiment can be applied.

It should be noted that the present invention is not limited to the configuration of the above-mentioned embodiment, nor is it limited to the above-mentioned operation and effect. Various modifications can be made in the present invention without departing from the scope of the present invention.

In the above-mentioned embodiment, the case where the frame portion 6 and the lid portion 7 are directly welded has been described, but the joining method of the frame portion 6 and the lid portion 7 is not limited thereto. For example, the frame portion 6 and the cover portion 7 may be bonded together via an adhesive layer (for example, a glass adhesive).

In the above-described embodiment, the lid portion 7 may be bonded to the frame portion 6 after the frame portion 6 is bonded to the base material 3 . In this case, after bonding the frame portion 6 and the base material 3 , the electronic component 2 may be mounted on the base material 3 , and then the lid portion 7 may be bonded to the frame portion 6 . However, in consideration of workability, it is preferable to mount the electronic component 2 on the base material 3 before bonding the frame portion 6 to the base material 3 .

(third embodiment)

FIG. 13 illustrates a frame portion 6 of a third embodiment of the present invention. In the present embodiment, in order to improve light extraction efficiency, a reflective film 31 is formed on the inner peripheral surface 6 c of the frame portion 6 .

Reflective film 31 is a layer that reflects light emitted from electronic component 2 . The reflective film 31 is preferably composed of, for example, resin paint containing metals such as aluminum and gold, ceramics such as alumina, zirconia, and titania, glass paste, or the like.

The thickness of the reflective film 31 is preferably, for example, 0.1 to 100 μm.

The reflectance of the reflective film 31 in the wavelength band (for example, 250 to 350 nm) of light emitted from the electronic component 2 is preferably 10%, 20%, 30%, 40%, 50%, 60% or more, particularly preferably 70%. above. Here, reflectance can be calculated by measuring the transmittance at each wavelength in the wavelength range of 250-350 nm using UH-4150 manufactured by Hitachi High-tech.

As a method of forming the reflective film 31 on the inner peripheral surface 6 c of the frame portion 6 , it is desirable to utilize a spraying method. In the case of using the spraying method, the spraying liquid (liquid that becomes a reflective film) can be applied to the inner peripheral surface of the frame portion 6 by using a mask to protect the flat portions of the upper and lower end surfaces 6a, 6b of the frame portion 6. , and then, the reflective film 31 is easily formed on the inner peripheral surface 6c of the frame portion 6 by peeling off the mask. In addition, the formation method of the reflective film 31 is not limited to this, For example, the dipping method etc. can also be utilized. In the case of using the dip coating method, it is possible to immerse the frame portion 6 having the through-hole H in a dipping liquid (the liquid that becomes the reflective film 31 ), and then remove the imperfections formed on the surface of the frame portion 6 by grinding or the like. The reflective film 31 is removed in necessary portions (upper and lower end surfaces 6 a , 6 b , etc.), and the reflective film 31 is formed on the inner peripheral surface 6 c of the frame portion 6 . In this case, when removing the unnecessary part of the reflective film 31 , the upper end surface 6 a of the frame portion 6 is polished, thereby adjusting the surface accuracy at the time of bonding with the cover portion 7 .

Example

Hereinafter, the present invention will be described in detail based on examples, but the present invention is not limited to these examples.

(1) Regarding protective caps A and B

A cover portion made of quartz glass and a frame portion made of quartz glass were joined with solder (gold-tin solder: coefficient of thermal expansion: 176×10 ⁻⁷ /° C.), thereby producing a protective cap A as a comparative example. In addition, a cover made of quartz glass and a frame made of BU-41 (thermal expansion coefficient: 42×10 ⁻⁷ /° C.) were directly fused by laser irradiation to produce protective cap B as an example.

For the protective caps A and B obtained, metallization films of Cr, Ni, and Au were sequentially formed on the bonded portion with the base material, and solder layers made of Au—Sn-based solder were respectively formed thereon.

Using the protective caps A and B on which the solder layer was formed, the electronic device was produced by thermal mounting to the aluminum nitride base material, and the rate of occurrence of cracks in the protective caps at this time was measured. As a result, about 4% of cracks occurred in the protective cap A after mounting, and no cracks occurred in the protective cap B after mounting.

(2) Regarding protective caps C and D

A protective cap C as an example was produced by welding a member having an ultraviolet antireflection film formed on both surfaces of a cover made of quartz glass and a frame made of BU-41 by laser irradiation. In addition, by laser irradiation, the part with the ultraviolet anti-reflection film formed on both surfaces of the cover part made of quartz glass and the part with the ultraviolet reflection film formed on the inner peripheral surface of the frame part made of BU-41 are welded. , thus making a protective cap D as an example.

For the obtained protective caps C and D, Cr, Ni, and Au metallization films were successively formed at the joint portion with the base material, and solder layers made of Au—Sn-based solder were respectively formed thereon.

An electronic device was produced by heat-mounting to an aluminum nitride substrate using the protective caps C and D on which the solder layer was formed, and the light extraction efficiency thereof was measured. As a result, the light extraction efficiency of the electronic device using the protective cap D was 3% higher than that of the electronic device using the protective cap C.

In the above-mentioned Examples, the present invention was described using an example in which BU-41 was used for the frame portion, but the glasses of sample Nos. 1 to 3 shown in Table 1 may be used other than BU-41. It should be noted that in the following table, Ps represents the strain point, Ta represents the annealing point, Ts represents the softening point, α represents the thermal expansion coefficient, E represents the Young's modulus, TL represents the liquidus temperature, and Logηat TL represents the liquidus viscosity.

[Table 1]

Explanation of reference signs

1 electronics

2 electronic components

3 Substrate

4 protective caps

5 junction

6 frame

7 cover

8 joint

9 welding part

10 metallization layers

11 Solder layer

21 welding part

Claims (12)

1. A protective cap, characterized in that it is used to protect electronic components, The protective cap has: frame, a cover portion covering an opening at one end of the frame portion, and a joining part joining the frame part and the cover part, the cover is formed of quartz glass, The frame portion is formed of a glass material having a thermal expansion coefficient of 30×10 ^-7 /°C to 100×10 ^-7 /°C in a temperature range of 30°C to 380°C. 2. The protective cap of claim 1, wherein: The joining portion is formed by directly welding the frame portion and the cover portion. 3. The protective cap according to claim 1 or 2, wherein, The glass material of the frame portion has a transmittance of 10% or more at a thickness of 0.7 mm and a wavelength of 200 nm. 4. The protective cap according to any one of claims 1 to 3, wherein: The glass material of the frame portion has a strain point of 430° C. or higher. 5. The protective cap according to any one of claims 1 to 4, wherein: The softening point of the glass material of the frame portion is 1000° C. or lower. 6. The protective cap according to any one of claims 1 to 5, wherein: The glass material of the frame portion contains 50% to 80% of SiO ₂ , 1% to 45% of Al ₂ O ₃ +B ₂ O ₃ , 0% to 25% of Li ₂ O+Na ₂ O+K ₂ O in mass %. %, MgO+CaO+SrO+BaO 0% to 25% as the composition. 7. The protective cap according to any one of claims 1 to 6, wherein: A reflective film is formed on an inner peripheral surface of the frame portion. 8. The protective cap according to any one of claims 1 to 7, wherein: An anti-reflection film is formed on at least one of a surface and a rear surface of the cover. 9. An electronic device, comprising: electronic components, a base material on which the electronic component is mounted, and The protective cap according to any one of claims 1 to 8, which is bonded to the base material so as to house the electronic component inside. 10. The electronic device according to claim 9, wherein, The protective cap and the base material are joined by solder. 11. The electronic device according to claim 9 or 10, wherein, The electronic component is an ultraviolet LED. 12. A method of manufacturing a protective cap, characterized in that it is a method of manufacturing a protective cap for protecting electronic components, comprising the following steps: A preparation process, preparing a lid formed of quartz glass and a frame formed of a glass material with a thermal expansion coefficient in the temperature range of 30°C to 380°C of 30×10/°C ⁻⁷ to 100×10 ⁻⁷ /°C; and In the bonding step, irradiating a contact portion between the cover and the frame with laser light in a state where the cover is in contact with the frame so as to cover an opening at one end of the frame, thereby bonding the cover to the frame. The cover is directly welded to the frame.

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