CN115469708A - Band gap reference starting circuit - Google Patents
Band gap reference starting circuit Download PDFInfo
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- CN115469708A CN115469708A CN202211424025.5A CN202211424025A CN115469708A CN 115469708 A CN115469708 A CN 115469708A CN 202211424025 A CN202211424025 A CN 202211424025A CN 115469708 A CN115469708 A CN 115469708A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
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Abstract
The invention discloses a band gap reference starting circuit, comprising: an asymmetric input tube comparator and a switch tube NM2; the P-type MOS transistor PM4 and the n-time P-type MOS transistor n × PM4 are respectively connected with the top end and the bottom end of a resistor R1 in the band-gap reference circuit; the switch tube NM2 is respectively connected with the P-type MOS tube PM4 and the N-type MOS tube NM1; the N-type MOS tube NM0 is connected with the N-time P-type MOS tube N × PM 4; the N-type MOS tube NM1 is respectively connected with the P-type MOS tube PM4, the N-time P-type MOS tube N × PM4 and the N-type MOS tube NM 0. The starting circuit can be flexibly started and closed, is not limited to a current mode or voltage mode structure, is compatible with enough small area and ultra-low static power consumption, and can achieve more accurate starting effect on a band gap reference circuit.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuit design, in particular to a band-gap reference starting circuit.
Background
An existing common starting circuit is shown in fig. 1, and in order to pursue ultra-low static power consumption, a resistor R0 is required to be large, so that the area is too large; or, in order to save area, the resistor R0 cannot be too large, which leads to a problem of excessive static power consumption. Moreover, for a current mode bandgap circuit (bandgap reference circuit), the common starting method is not accurate enough due to more degeneracy points under low current, and sometimes the circuit cannot be successfully started completely.
Therefore, how to provide a starting circuit of a bandgap reference circuit based on the existing starting circuit to smoothly and accurately start the bandgap reference circuit while considering both small area and ultra-low power consumption is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above problems, the present invention provides a bandgap reference start circuit that at least solves some of the above technical problems, and is not limited to a current mode or voltage mode structure, and can smoothly and accurately start the bandgap reference circuit while considering small area and ultra-low power consumption.
The embodiment of the invention provides a band gap reference starting circuit, which comprises: an asymmetric input tube comparator and a switch tube NM2;
the asymmetric input tube comparator comprises: the power supply comprises a P-type MOS tube PM4, an N-time P-type MOS tube N & ltPM 4, a power supply current Is0, an N-type MOS tube NM0 and an N-type MOS tube NM1; wherein 0-n-woven fabric is composed of (1);
the P-type MOS tube PM4 and the n-time P-type MOS tube n × PM4 are respectively connected with the top end and the bottom end of a resistor R1 in the band-gap reference circuit; the top end of the resistor R1 is connected with a triode Q1 in the band-gap reference circuit; the bottom end of the resistor R1 is connected with a triode Q2 in the band-gap reference circuit;
the switch tube NM2 is respectively connected with the P-type MOS tube PM4 and the N-type MOS tube NM1; the N-type MOS tube NM0 is connected with the N-time P-type MOS tube N × PM 4; the N-type MOS tube NM1 is respectively connected with the P-type MOS tube PM4, the N-time P-type MOS tube N × PM4 and the N-type MOS tube NM 0.
Further, the gate terminal voltage of the P-type MOS transistor PM4 is connected to the top voltage of the resistor R1; the gate terminal voltage of the n-time P-type MOS tube n × PM4 is connected with the bottom end voltage of the resistor R1;
the top end voltage of the resistor R1 is the voltage between the base electrode and the emitting electrode of the triode Q1;
the bottom end voltage of the resistor R1 is the voltage between the base electrode and the emitting electrode of the triode Q2.
Further, the width-to-length ratio W/L of the n times P-type MOS tube n × PM4 is smaller than the width-to-length ratio W/L of the P-type MOS tube PM 4.
Further, when the bandgap reference circuit is not started, the voltage difference between the top voltage and the bottom voltage of the resistor R1 is 0; the current flowing through the P-type MOS tube PM4 is larger than the current flowing through the n times of P-type MOS tube n × PM 4; the drain end of the N-type MOS tube NM1 is raised; the gate end voltage of the switch tube NM2 rises, and the switch tube NM2 is turned on;
the gate terminal voltages of a current mirror PM0, a current mirror PM1 and a current mirror PM2 in the band gap reference circuit are pulled low, the current mirror PM0, the current mirror PM1 and the current mirror PM2 are started, and the band gap reference circuit is started.
Further, when the bandgap reference circuit is started, the top voltage of the resistor R1 is greater than the bottom voltage; the current flowing through the P-type MOS tube PM4 is smaller than the current flowing through the n times P-type MOS tube n × PM 4;
the gate end of the N-type MOS tube NM1 is raised; the drain voltage of the switch tube NM2 is reduced, and the switch tube NM2 is turned off.
Further, the asymmetric input tube comparator further comprises: an N-type MOS tube NM3;
the N-type MOS tube NM3 is connected to a connection circuit of the switch tube NM2, the P-type MOS tube PM4 and the N-type MOS tube NM1;
the N-type MOS transistor NM3 is used for limiting or slowing down the current flowing through the switching transistor NM 2.
Further, the current mirror PM0, the current mirror PM1 and the current mirror PM2 are all P-type MOS transistors.
Further, the switching tube NM2 is an N-type MOS tube.
The technical scheme provided by the embodiment of the invention has the beneficial effects that at least:
the band gap reference starting circuit provided by the embodiment of the invention comprises: an asymmetric input tube comparator and a switch tube NM2; the asymmetric input tube comparator comprises: the power supply comprises a P-type MOS tube PM4, an N-time P-type MOS tube N & ltPM 4, a power supply current Is0, an N-type MOS tube NM0 and an N-type MOS tube NM1; wherein 0-n-woven fabric is composed of (1); the P-type MOS tube PM4 and the n-time P-type MOS tube n × PM4 are respectively connected with the top end and the bottom end of a resistor R1 in the band-gap reference circuit; the switch tube NM2 is respectively connected with the P-type MOS tube PM4 and the N-type MOS tube NM1; the N-type MOS tube NM0 is connected with the N times of the P-type MOS tube N x PM 4; the N-type MOS tube NM1 is respectively connected with the P-type MOS tube PM4, the N-time P-type MOS tube N PM4 and the N-type MOS tube NM 0. The starting circuit can be flexibly started and closed, is not limited to a current mode or voltage mode structure, is compatible with enough small area and ultra-low static power consumption, and can achieve more accurate starting effect on a band gap reference circuit.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a diagram of a conventional starting circuit according to the prior art according to an embodiment of the present invention;
FIG. 2 is a first bandgap reference start-up circuit according to an embodiment of the present invention;
fig. 3 is a second bandgap reference start-up circuit provided in the embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
An embodiment of the present invention provides a bandgap reference start circuit, as shown in fig. 2, including: the asymmetrical input tube comparator and the switch tube NM2;
the asymmetric input tube comparator comprises: the power supply comprises a P-type MOS tube PM4, an N-time P-type MOS tube N & ltPM 4, a power supply current Is0, an N-type MOS tube NM0 and an N-type MOS tube NM1; wherein 0< -n < -1 >;
the P-type MOS tube PM4 and the n-time P-type MOS tube n × PM4 are respectively connected with the top end and the bottom end of a resistor R1 in the band-gap reference circuit; the top end of the resistor R1 is connected with a triode Q1 in the band-gap reference circuit; the bottom end of the resistor R1 is connected with a triode Q2 in the band-gap reference circuit;
the switch tube NM2 is respectively connected with the P-type MOS tube PM4 and the N-type MOS tube NM1; the N-type MOS tube NM0 is connected with the N-time P-type MOS tube N × PM 4; the N-type MOS tube NM1 is respectively connected with the P-type MOS tube PM4, the N-time P-type MOS tube N × PM4 and the N-type MOS tube NM 0.
The band-gap reference starting circuit provided by the embodiment is not limited to a current mode or voltage mode structure, and can achieve the effect of accurately and smoothly starting the band-gap reference circuit while considering small area and ultra-low power consumption. The power consumption of the bandgap reference starting circuit is reduced.
Referring to fig. 2, a dotted line portion is a starting circuit portion provided in this embodiment, in which the asymmetric input tube comparator includes: PM4, n PM4, NM0, NM1 and Is0.PM4 is a P-type MOS tube, and the MOS tube refers to a metal oxide semiconductor field effect transistor. n PM4 is n times of P type MOS pipes, and 0 and n are formed by the layers of the cloth and the cloth 1.NM0 is N-type MOS tube. NM1 is an N-type MOS tube. The Is0 may be an ideal current source, the bias current may duplicate the reference current generating circuit, and the current may be at nA level, which Is not limited in this embodiment. The switch tube NM2 is an N-type MOS tube.
A resistor R1 is provided in the bandgap reference core circuit (bandgap core) in the right half of fig. 2. The gate terminal voltage of the PM4 is connected with the top end VBE1 of the R1; the gate terminal voltage of n × PM4 is connected to the bottom end VBE2 of R1. Wherein VBE1 refers to the voltage between the base electrode and the emitter electrode of the triode Q1; VBE2 refers to the voltage between the base and emitter of transistor Q2. Wherein R1 denotes a common resistor.
The input pair transistors PM4, n × PM4 of the comparators must be designed asymmetrically, i.e. must be 0-n-1. The specific numerical value needs to be determined according to calculation and simulation. When the bandgap core circuit is not started, the reduced voltage difference between two ends of the resistor R1 is close to 0, namely VBE1= VBE2, so that the OTA input ends are in 'virtual short', namely the voltages are equal; since the width-to-length ratio W/L of n × PM4 is smaller than the width-to-length ratio W/L of PM4, the current flowing through PM4 is larger than the current flowing through n × PM4, the drain terminal of NM1 is raised, the gate terminal voltage of NM2 is raised, NM2 is started, the gate terminal voltage VPS of a PMOS current mirror tube is pulled down, current mirrors PM0, PM1 and PM2 are started, and a bandgap core circuit is started to enter a static working point to be operated along with the current flowing through PM0, PM1 and PM 2.
When the bandgap core gradually enters a working state, VBE1 is larger than VBE2 constantly, according to a current square law formula, the current flowing through PM4 is required to be smaller than the current flowing through n PM4, the gate end of NM1 is raised, the voltage of the drain end of NM2 is reduced, NM2 is turned off, and the bandgap core circuit is not influenced any more. The bandgap circuit can be started more accurately.
The current mirror PM0, the current mirror PM1 and the current mirror PM2 are all P-type MOS tubes.
The current square law equation is:
in the above formula, I 0 Represents the current; k represents a heat transfer coefficient K value;
represents the width-to-length ratio; v gs Representing the gate-source voltage; v th Representing the threshold voltage.
Through calculation:
VS represents the source voltage of PM 4;
the calculation can effectively determine the size of n in n x PM 4.
Further, for more accurate determination of n-value, the difference between VEB1 and VBE2 was simulated at different pvt (process corner, voltage, temperature)
To determine the size of n.
Referring to fig. 3, for better start-up, the overshoot phenomenon of vref voltage in the bandgap reference core circuit during start-up is reduced, NM3 transistor is added on the basis of fig. 2, and the current flowing through NM2 can be limited or slowed down by appropriate size adjustment, so as to reduce the overshoot generated by vref voltage during start-up. The NM3 tube is an N-type MOS tube NM3; NM3 access is on NM2 connection path with PM4 and NM 1.
The bandgap reference start-up circuit provided by this embodiment skillfully utilizes the characteristics of the comparator with the asymmetric input tube structure, and the comparator with the asymmetric input tube structure is used to form the start-up circuit, so that the start-up circuit of the bandgap reference circuit is started up more accurately. The problem of difficulty in starting a current mode circuit of the band-gap reference circuit is solved. When the band-gap reference circuit is not started, the starting circuit works to start the band-gap reference circuit; after the band-gap reference circuit is started, the starting circuit can close the starting circuit, and the work of the band-gap reference circuit is not influenced. The band-gap reference circuit is compatible with enough small area and ultra-low static power consumption, and can achieve more accurate starting effect than the prior art.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. A bandgap reference start-up circuit, comprising: the asymmetrical input tube comparator and the switch tube NM2;
the asymmetric input tube comparator comprises: the power supply comprises a P-type MOS tube PM4, an N-time P-type MOS tube N & ltPM 4, a power supply current Is0, an N-type MOS tube NM0 and an N-type MOS tube NM1; wherein 0-n-woven fabric is composed of (1);
the P-type MOS tube PM4 and the n-time P-type MOS tube n PM4 are respectively connected with the top end and the bottom end of a resistor R1 in the band-gap reference circuit; the top end of the resistor R1 is connected with a triode Q1 in the band-gap reference circuit; the bottom end of the resistor R1 is connected with a triode Q2 in the band-gap reference circuit;
the switch tube NM2 is respectively connected with the P-type MOS tube PM4 and the N-type MOS tube NM1; the N-type MOS tube NM0 is connected with the N times of P-type MOS tube N × PM 4; the N-type MOS tube NM1 is respectively connected with the P-type MOS tube PM4, the N-time P-type MOS tube N × PM4 and the N-type MOS tube NM 0.
2. The bandgap reference start-up circuit as claimed in claim 1, wherein the gate terminal voltage of the P-type MOS transistor PM4 is connected to the top terminal voltage of the resistor R1; the gate terminal voltage of the n times P type MOS tube n × PM4 is connected with the bottom end voltage of the resistor R1;
the top end voltage of the resistor R1 is the voltage between the base electrode and the emitting electrode of the triode Q1;
the voltage at the bottom end of the resistor R1 is the voltage between the base electrode and the emitting electrode of the triode Q2.
3. The bandgap reference start-up circuit as recited in claim 2, wherein the width to length ratio W/L of n times P-type MOS transistor n x PM4 is less than the width to length ratio W/L of P-type MOS transistor PM 4.
4. The bandgap reference start-up circuit as recited in claim 3, wherein when the bandgap reference circuit is not started up, the voltage difference between the top end voltage and the bottom end voltage of the resistor R1 is 0; the current flowing through the P-type MOS tube PM4 is larger than the current flowing through the n times of P-type MOS tube n × PM 4; the drain end of the N-type MOS tube NM1 is raised; the gate end voltage of the switch tube NM2 is increased, and the switch tube NM2 is turned on;
the gate terminal voltages of a current mirror PM0, a current mirror PM1 and a current mirror PM2 in the band gap reference circuit are pulled low, the current mirror PM0, the current mirror PM1 and the current mirror PM2 are started, and the band gap reference circuit is started.
5. The bandgap reference start-up circuit as claimed in claim 3, wherein when the bandgap reference circuit is started up, the top voltage of the resistor R1 is greater than the bottom voltage; the current flowing through the P-type MOS tube PM4 is smaller than the current flowing through the n times of P-type MOS tube n × PM 4;
the gate end of the N-type MOS tube NM1 is raised; the drain voltage of the switching tube NM2 is reduced, and the switching tube NM2 is turned off.
6. The bandgap reference start-up circuit of claim 1, wherein the asymmetric input pipe comparator further comprises: an N-type MOS tube NM3;
the N-type MOS tube NM3 is connected to a connection circuit of the switch tube NM2, the P-type MOS tube PM4 and the N-type MOS tube NM1;
the N-type MOS transistor NM3 is used for limiting or slowing down the current flowing through the switching transistor NM 2.
7. The bandgap reference start-up circuit as claimed in claim 4, wherein the current mirror PM0, the current mirror PM1 and the current mirror PM2 are all P-type MOS transistors.
8. The bandgap reference start-up circuit as claimed in claim 1, wherein said switching transistor NM2 is an N-type MOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211424025.5A CN115469708A (en) | 2022-11-15 | 2022-11-15 | Band gap reference starting circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211424025.5A CN115469708A (en) | 2022-11-15 | 2022-11-15 | Band gap reference starting circuit |
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| CN115469708A true CN115469708A (en) | 2022-12-13 |
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| CN202211424025.5A Pending CN115469708A (en) | 2022-11-15 | 2022-11-15 | Band gap reference starting circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116501121A (en) * | 2023-04-28 | 2023-07-28 | 北京思凌科半导体技术有限公司 | Band gap reference circuit and chip |
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| US7286002B1 (en) * | 2003-12-05 | 2007-10-23 | Cypress Semiconductor Corporation | Circuit and method for startup of a band-gap reference circuit |
| US20080224682A1 (en) * | 2006-10-06 | 2008-09-18 | Holger Haiplik | Voltage reference circuit |
| CN101847928A (en) * | 2010-04-14 | 2010-09-29 | 广州市广晟微电子有限公司 | Quick starting circuit and method of low-noise linear regulator |
| CN102103388A (en) * | 2009-12-22 | 2011-06-22 | 三星半导体(中国)研究开发有限公司 | Bandgap voltage reference circuit with start-up circuit |
| CN103425171A (en) * | 2012-05-18 | 2013-12-04 | 联咏科技股份有限公司 | Starting circuit and band-gap voltage generating device |
| CN114546013A (en) * | 2022-01-26 | 2022-05-27 | 中山大学 | A Reference Startup Circuit Using Comparator Sensing Current with Mismatch |
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2022
- 2022-11-15 CN CN202211424025.5A patent/CN115469708A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7286002B1 (en) * | 2003-12-05 | 2007-10-23 | Cypress Semiconductor Corporation | Circuit and method for startup of a band-gap reference circuit |
| US20080224682A1 (en) * | 2006-10-06 | 2008-09-18 | Holger Haiplik | Voltage reference circuit |
| CN102103388A (en) * | 2009-12-22 | 2011-06-22 | 三星半导体(中国)研究开发有限公司 | Bandgap voltage reference circuit with start-up circuit |
| CN101847928A (en) * | 2010-04-14 | 2010-09-29 | 广州市广晟微电子有限公司 | Quick starting circuit and method of low-noise linear regulator |
| CN103425171A (en) * | 2012-05-18 | 2013-12-04 | 联咏科技股份有限公司 | Starting circuit and band-gap voltage generating device |
| CN114546013A (en) * | 2022-01-26 | 2022-05-27 | 中山大学 | A Reference Startup Circuit Using Comparator Sensing Current with Mismatch |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116501121A (en) * | 2023-04-28 | 2023-07-28 | 北京思凌科半导体技术有限公司 | Band gap reference circuit and chip |
| CN116501121B (en) * | 2023-04-28 | 2024-02-13 | 北京思凌科半导体技术有限公司 | Band gap reference circuit and chip |
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Application publication date: 20221213 |