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CN115458515B - A power MOSFET module and production method - Google Patents

A power MOSFET module and production method Download PDF

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Publication number
CN115458515B
CN115458515B CN202211300532.8A CN202211300532A CN115458515B CN 115458515 B CN115458515 B CN 115458515B CN 202211300532 A CN202211300532 A CN 202211300532A CN 115458515 B CN115458515 B CN 115458515B
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power mosfet
wafer
chip
mosfet module
copper substrate
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CN115458515A (en
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潘波
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Chengdu Scilicon Electric Co ltd
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Chengdu Scilicon Electric Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60135—Applying energy, e.g. for the soldering or alloying process using convection, e.g. reflow oven

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention discloses a power MOSFET module and a production method thereof, and relates to the technical field of semiconductors. The semiconductor packaging structure comprises a DBC plate, wherein a plurality of copper substrates are arranged on the DBC plate, wafers are arranged on the copper substrates, and the DBC plate, the copper substrates and the wafers are embedded in a plastic package body. According to the invention, the wafer is fixed in the groove of the copper substrate and then welded and fixed with the DBC plate, so that the power MOSFET module can be produced by adopting equipment with lower cost in production, and the copper substrate can be used as additional heat capacity, so that the thermal shock resistance of the power MOSFET module is effectively enhanced, and the applicability of the power MOSFET module is wider. According to the invention, the wafer is fixed on the copper substrate, and then BIN is separated in a test mode, so that an expensive wafer tester is replaced by a cheaper common chip sorter, the production cost can be effectively saved, and meanwhile, after the wafer is fixed on the copper substrate, SMT equipment for producing MOS single tubes can be adopted.

Description

Power MOSFET module and production method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a power MOSFET module and a production method thereof.
Background
The power MOSFET module is almost used in all electronic manufacturing industries including notebooks, PCs, servers, displays and various peripheral devices in the computer field, mobile phones, telephones and other various terminal and local side equipment in the network communication field, traditional black and white household appliances and various digital products in the consumer electronics field, industrial PCs, various instruments and meters, various control equipment and the like in the industrial control field.
When the existing power MOSFET module is manufactured, because of the fragile characteristic of the wafer, the wafer cannot be braided and packaged, namely, a chip mounter with braiding feeding cannot be adopted for chip mounting, a special chip mounter is required to be adopted for chip mounting operation, the chip mounter is used for directly bonding the wafer on a DBC plate with the brushed solder paste, then welding and fixing are carried out through vacuum reflow soldering, and then plastic packaging, rib cutting, testing and packaging are carried out, so that the power MOSFET module is manufactured.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a power MOSFET module with good thermal shock resistance.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
A power MOSFET module is provided, which comprises a DBC plate, wherein a plurality of copper substrates are arranged on the DBC plate, wafers are arranged on the copper substrates, and the DBC plate, the copper substrates and the wafers are embedded in a plastic package body.
Further, a groove is formed in the copper substrate, the wafer is welded to the bottom of the groove through solder paste, and the wafer does not protrude from the surface of the copper substrate.
The wafer is welded in the groove, so that the wafer is embedded in the copper substrate, the surface of the wafer, which does not protrude out of the copper substrate, can enable the wafer and the copper substrate to be subjected to braid packaging, and the wafer cannot be scratched during braid packaging.
Further, the wafer is located at the very center of the groove, and a uniform gap is arranged between the wafer and the groove.
In order to overcome the defects in the prior art, the invention provides a production method of a power MOSFET module with lower production cost.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
a method of producing a power MOSFET module comprising the steps of:
S1, mounting a copper substrate in a carrier and then placing the copper substrate in a chip mounter;
S2, fixing a wafer on a copper substrate through a DB thermomotor to obtain a chip material;
S3, braiding and packaging the chip material to obtain a material belt;
s4, using a chip mounter to paste chip materials on the material belt on a DBC plate with tin paste brushed;
s5, welding the chip material on the DBC board by using vacuum reflow soldering;
S6, electrically connecting the chip materials by using a wire bonding machine to obtain a power MOSFET module chip;
And S7, sequentially performing plastic packaging, rib cutting, testing and packaging on the power MOSFET module chip to obtain the power MOSFET module.
Further, between step S2 and step S3, there is a step of:
And S2.5, testing and BIN-separating the chip materials by using a chip sorting machine, and separating the chip materials with the same BIN onto the same material belt.
The beneficial effects of the invention are as follows:
1. According to the invention, the wafer is fixed in the groove of the copper substrate and then welded and fixed with the DBC plate, so that the power MOSFET module can be produced by adopting equipment with lower cost in production, and the copper substrate can be used as additional heat capacity, so that the thermal shock resistance of the power MOSFET module is effectively enhanced, and the applicability of the power MOSFET module is wider.
2. The wafer is fixed on the copper substrate, and then BIN is separated in a testing mode, so that an expensive wafer testing machine is replaced by a cheaper common chip sorting machine, the production cost can be effectively saved, meanwhile, after the wafer is fixed on the copper substrate, SMT equipment for producing MOS single tubes can be adopted, compared with a special die bonder, the chip mounter and the SMT equipment have the advantages of lower cost and wider purchase channel, moreover, the power MOSFET module can adopt the same production line with the MOS single tubes, a factory can flexibly receive order production, the operation cost of the factory is reduced, and meanwhile, when the factory wants to convert, the production conversion cost of the factory is reduced, so that the factory is converted from a production MOS tube part mode to a production power MOSFET module finished product mode more quickly, and the technical blockage of equipment abroad is avoided.
Drawings
FIG. 1 is a schematic perspective view of a chip material;
FIG. 2 is a schematic diagram of a front center cross-section of a chip material;
fig. 3 is a flow chart of a method for producing the power MOSFET module.
Wherein, 1, copper substrate, 2, wafer, 3, groove, 4, soldering tin layer.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
As shown in fig. 1-2, a power MOSFET module includes a DBC board, a plurality of copper substrates 1 are disposed on the DBC board, a wafer 2 is disposed on each of the plurality of copper substrates 1, and the DBC board, the copper substrates 1 and the wafer 2 are all embedded in a plastic package. The copper substrate 1 is provided with a groove 3, the wafer 2 is welded at the bottom of the groove 3 through solder paste, and the wafer 2 does not protrude from the surface of the copper substrate 1. The wafer 2 is positioned at the center of the groove 3, and a uniform gap is arranged between the wafer 2 and the groove 3.
As shown in fig. 3, a method for producing a power MOSFET module includes the steps of:
s1, loading a copper substrate 1 into a carrier and then placing the carrier into a chip mounter;
S2, fixing a wafer 2 on a copper substrate 1 through a DB thermomotor to obtain a chip material;
The DB thermo-engine adopts the device with model ASM SD832, i.e. Die Bond thermo-engine, which is a commonly used device in semiconductor packaging factories, and has lower device cost and maintenance cost compared with Die bonders.
And S2.5, testing and BIN-separating the chip materials by using a chip sorting machine, and separating the chip materials with the same BIN onto the same material belt.
S3, braiding and packaging the chip material to obtain a material belt;
s4, using a chip mounter to paste chip materials on the material belt on a DBC plate with tin paste brushed;
s5, welding the chip material on the DBC board by using vacuum reflow soldering;
S6, electrically connecting the chip materials by using a wire bonding machine to obtain a power MOSFET module chip;
And S7, sequentially performing plastic packaging, rib cutting, testing and packaging on the power MOSFET module chip to obtain the power MOSFET module.

Claims (4)

1.一种功率MOSFET模块，其特征在于，包括DBC板，所述DBC板上设置有若干铜衬底(1)，所述若干铜衬底(1)上均设置有晶圆(2)；所述DBC板、铜衬底(1)和晶圆(2)均嵌设在塑封体中；1. A power MOSFET module, characterized in that it comprises a DBC board, on which a plurality of copper substrates (1) are arranged, and on which a wafer (2) is arranged; the DBC board, the copper substrates (1) and the wafer (2) are all embedded in a plastic package; 所述铜衬底(1)上设置有凹槽(3)，所述晶圆(2)通过锡膏焊接于凹槽(3)的底部，且所述晶圆(2)不突出于铜衬底(1)的表面。The copper substrate (1) is provided with a groove (3), the wafer (2) is soldered to the bottom of the groove (3) by means of solder paste, and the wafer (2) does not protrude from the surface of the copper substrate (1). 2.根据权利要求1所述的功率MOSFET模块，其特征在于，所述晶圆(2)位于凹槽(3)的正中心，所述晶圆(2)与凹槽(3)之间设置有均匀的间隙。2. The power MOSFET module according to claim 1, characterized in that the wafer (2) is located at the exact center of the groove (3), and a uniform gap is provided between the wafer (2) and the groove (3). 3.一种基于权利要求1或2所述的功率MOSFET模块的生产方法，其特征在于，包括如下步骤：3. A method for producing a power MOSFET module according to claim 1 or 2, characterized in that it comprises the following steps: S1：将所述铜衬底装于载具中后放入贴片机中；S1: placing the copper substrate in a carrier and then placing it in a placement machine; S2：通过DB热机将晶圆固定在铜衬底上得到芯片物料；S2: Fixing the wafer on the copper substrate by DB heat machine to obtain chip material; S3：将芯片物料进行编带包装得到物料带；S3: Packing the chip material into a tape to obtain a material tape; S4：使用贴片机将物料带上的芯片物料贴在刷好锡膏的DBC板上；S4: Use a chip mounter to attach the chip material on the material belt to the DBC board with solder paste applied; S5：使用真空回流焊将芯片物料焊接在DBC板上；S5: Use vacuum reflow soldering to solder the chip material onto the DBC board; S6：使用打线机对芯片物料进行电气连接得到功率MOSFET模块芯片；S6: Use a wire bonding machine to electrically connect the chip material to obtain a power MOSFET module chip; S7：对功率MOSFET模块芯片依次进行塑封、切筋、测试和打包得到功率MOSFET模块。S7: The power MOSFET module chip is sequentially plastic-sealed, rib-cut, tested and packaged to obtain a power MOSFET module. 4.根据权利要求3所述的功率MOSFET模块的生产方法，其特征在于，所述步骤S2和步骤S3之间还有步骤：4. The method for producing a power MOSFET module according to claim 3, characterized in that there is a further step between step S2 and step S3: S2.5：使用芯片分选机对芯片物料进行测试分BIN，将相同BIN的芯片物料分至同一物料带上。S2.5: Use a chip sorter to test and sort the chip materials into BINs, and sort the chip materials with the same BIN into the same material belt.
CN202211300532.8A 2022-10-24 2022-10-24 A power MOSFET module and production method Active CN115458515B (en)

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CN114843196A (en) * 2022-03-02 2022-08-02 南通格普微电子有限公司 Electrode conductive pillar bonded wafer fabrication method

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