CN218647932U - Power semiconductor module of ultrasonic welding lead frame - Google Patents
Power semiconductor module of ultrasonic welding lead frame Download PDFInfo
- Publication number
- CN218647932U CN218647932U CN202222754691.7U CN202222754691U CN218647932U CN 218647932 U CN218647932 U CN 218647932U CN 202222754691 U CN202222754691 U CN 202222754691U CN 218647932 U CN218647932 U CN 218647932U
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- Prior art keywords
- ceramic substrate
- lead frame
- power semiconductor
- semiconductor module
- thermistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000003466 welding Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000000919 ceramic Substances 0.000 claims abstract description 49
- 230000017525 heat dissipation Effects 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
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Abstract
The utility model provides a power semiconductor module of ultrasonic bonding lead frame relates to semiconductor power device encapsulation technical field, include: the heat dissipation substrate is characterized in that the upper surface of the heat dissipation substrate is provided with at least one metalized ceramic substrate, the upper surface of the metalized ceramic substrate is provided with at least one lead frame, and the lead frame is welded on the upper surface of the metalized ceramic substrate in an ultrasonic welding mode; at least one semiconductor chip, at least one bonding resistor and at least one thermistor are arranged on the emitting electrode of the metallized ceramic substrate; the frame welding method has the advantages that the frame positioning is more accurate and convenient, the welding efficiency is improved, the welding mode is simple to operate, the packaging quality is good, the welding strength is high by using the ultrasonic welding mode, the packaging and process requirements can be guaranteed, the reliability and the production efficiency of products are greatly improved, and the large-scale production is facilitated.
Description
Technical Field
The utility model relates to a semiconductor power device encapsulates technical field, especially relates to a power semiconductor module of ultrasonic bonding lead frame.
Background
Power modules are semiconductor packages used on power electronic circuits, such as: a module encapsulating an insulated gate bipolar transistor chip or a module of a metal oxide semiconductor field effect transistor chip. Some modules also have semiconductor diode chips packaged to provide overvoltage protection, and the above power semiconductor chips have a range of voltage and current levels to accommodate different applications or industrial applications.
In the conventional power device packaging process, a vacuum reflow soldering technology is generally used to connect the lead frame and the metallized ceramic substrate, and a new method is needed to replace the conventional vacuum reflow soldering technology because of low production efficiency, high cost and low soldering strength.
SUMMERY OF THE UTILITY MODEL
Aiming at the problems in the prior art, the utility model provides a power semiconductor module of ultrasonic bonding lead frame, which comprises a heat dissipation substrate, wherein the upper surface of the heat dissipation substrate is provided with at least one metallized ceramic substrate, the upper surface of the metallized ceramic substrate is provided with at least one lead frame, and the lead frame is welded on the upper surface of the metallized ceramic substrate in an ultrasonic bonding mode;
at least one semiconductor chip, at least one bonding resistor and at least one thermistor are arranged on the emitting electrode of the metallized ceramic substrate.
Preferably, the metallized ceramic substrate comprises:
the first copper layer is arranged on the upper surface of the heat dissipation substrate;
the ceramic layer is arranged on the upper surface of the first copper layer;
a second copper layer disposed on an upper surface of the ceramic layer;
the lead frame, the semiconductor chip, the bonding resistor and the thermistor are arranged on the upper surface of the second copper layer.
Preferably, the number of the lead frames is two, the two lead frames are respectively arranged on two side edges of the upper surface of the metallized ceramic substrate, and each lead frame is respectively led out towards the outside of the metallized ceramic substrate through a plurality of welding terminals.
Preferably, the area of the metallized ceramic substrate is smaller than that of the heat dissipation base plate.
Preferably, the metallized ceramic substrate is soldered to the upper surface of the heat dissipation base plate by solder.
Preferably, the semiconductor chip, the bonding resistor and the thermistor are soldered to the upper surface of the emitter electrode of the metallized ceramic substrate by means of solder.
Preferably, the semiconductor chip, the bonding resistor and the thermistor are connected with the upper surface of the metallized ceramic substrate in an ultrasonic bonding mode.
Preferably, a plurality of aluminum wires are respectively arranged on the upper surfaces of the semiconductor chip, the bonding resistor and the thermistor, and the semiconductor chip, the bonding resistor and the thermistor are connected through the aluminum wires; the upper surface of the semiconductor chip is provided with a copper strip, and the two semiconductor chips are connected through the copper strip.
The technical scheme has the following advantages or beneficial effects:
1) The frame is more accurate and convenient to position, and the welding efficiency is improved;
2) The welding mode is simple to operate, and the packaging quality is good;
3) The ultrasonic welding mode is used, so that the welding strength is high, the packaging and process requirements can be guaranteed, the reliability and the production efficiency of products are greatly improved, and the large-scale production is facilitated.
Drawings
Fig. 1 is a schematic top view of a power semiconductor module according to a preferred embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a power semiconductor module according to a preferred embodiment of the present invention;
FIG. 3 is an enlarged view of a portion A of FIG. 1 according to a preferred embodiment of the present invention;
fig. 4 is an enlarged view of a portion B in fig. 2 according to a preferred embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment, and other embodiments may also belong to the scope of the present invention as long as the gist of the present invention is satisfied.
In the preferred embodiment of the present invention, based on the above problems in the prior art, a power semiconductor module with an ultrasonic welding lead frame is provided, as shown in fig. 1 to 4, which includes a heat dissipating substrate 1, wherein the upper surface of the heat dissipating substrate 1 is provided with at least one metallized ceramic substrate 2, the upper surface of the metallized ceramic substrate 2 is provided with at least one lead frame 3, and the lead frame 3 is welded on the upper surface of the metallized ceramic substrate 2 by an ultrasonic welding method;
at least one semiconductor chip 4, at least one bonding resistor 5 and at least one thermistor 6 are arranged on the emitter of the metallized ceramic substrate 2.
Specifically, in this embodiment, the number of the semiconductor chips 4, the bonding resistors 5, and the thermistors 6 is not limited, and the specific number may be customized according to the requirement.
Preferably, the metallized ceramic substrate 2 comprises: a first copper layer 21, the first copper layer 21 being disposed on the upper surface of the heat dissipation substrate 1; a ceramic layer 22, the ceramic layer 22 being disposed on the upper surface of the first copper layer 21; a second copper layer 23, the second copper layer 23 being disposed on the upper surface of the ceramic layer 22; the lead frame 3, the semiconductor chip 4, the bonding resistor 5 and the thermistor 6 are arranged on the upper surface of the second copper layer 23; the metallized ceramic substrate 2 is soldered to the upper surface of the heat dissipating base plate 1 by solder 7. The metallized ceramic substrate 2 is made of a first copper layer 21, a ceramic layer 22 and a second copper layer 23 which are sequentially arranged from bottom to top through a metallized ceramic process, and the first copper layer 21 is welded on the upper surface of the heat dissipation substrate 1 through a welding flux 7.
Preferably, the area of the metallized ceramic substrate 2 is smaller than that of the heat dissipation substrate 1, and a plurality of metallized ceramic substrates 2 may be disposed on the upper surface of the heat dissipation substrate 1 as required, which is not limited.
In the preferred embodiment of the present invention, the number of the lead frames 3 is two, and the two lead frames are respectively disposed on the two side edges of the upper surface of the metallized ceramic substrate 2, and each of the lead frames 3 is respectively oriented by a plurality of welding terminals 31 to the outside of the metallized ceramic substrate 2.
In the preferred embodiment of the present invention, the upper surfaces of the semiconductor chip 4, the bonding resistor 5 and the thermistor 6 are respectively provided with a plurality of aluminum wires 8, and the semiconductor chip 4, the bonding resistor 5 and the thermistor 6 are connected by the aluminum wires 8; the upper surface of the semiconductor chip 4 is provided with a copper bar 9, and the two semiconductor chips 4 are connected through the copper bar 9.
Specifically, in the present embodiment, the aluminum wire 8 is a soft aluminum wire manufactured by a continuous casting and rolling process, and the soft aluminum wire is ultrasonically bonded to the upper surfaces of the semiconductor chip 4, the bonding resistor 5, and the thermistor 6. The semiconductor chip 4 and the bonding resistors 5 are connected through an aluminum wire 8, the two bonding resistors 5 are connected through the aluminum wire 8, and the two thermistors 6 are connected through the aluminum wire 8. The copper bar 9 is a hard copper bar manufactured by a one-time stamping process, and the hard copper bar is welded on the upper surface of the semiconductor chip 4 through solder paste.
Preferably, the semiconductor chip 4, the bonding resistor 5 and the thermistor 6 are welded to the emitter of the metallized ceramic substrate 2 by solder 7, and the semiconductor chip 4, the bonding resistor 5 and the thermistor 6 are connected to the upper surface of the metallized ceramic substrate 2 by ultrasonic bonding.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and it should be understood that all modifications and obvious variations of the present invention as described and illustrated herein are included within the scope of the present invention.
Claims (8)
1. A power semiconductor module of an ultrasonic welding lead frame is characterized by comprising a heat dissipation base plate, wherein the upper surface of the heat dissipation base plate is provided with at least one metalized ceramic substrate, the upper surface of the metalized ceramic substrate is provided with at least one lead frame, and the lead frame is welded on the upper surface of the metalized ceramic substrate in an ultrasonic welding mode;
at least one semiconductor chip, at least one bonding resistor and at least one thermistor are arranged on the emitting electrode of the metallized ceramic substrate.
2. The power semiconductor module of claim 1, wherein the metallized ceramic substrate comprises:
the first copper layer is arranged on the upper surface of the heat dissipation substrate;
the ceramic layer is arranged on the upper surface of the first copper layer;
a second copper layer disposed on an upper surface of the ceramic layer;
the lead frame, the semiconductor chip, the bonding resistor and the thermistor are arranged on the upper surface of the second copper layer.
3. The power semiconductor module according to claim 1, wherein the number of the lead frames is two, and the two lead frames are respectively arranged on two side edges of the upper surface of the metallized ceramic substrate, and each lead frame is respectively led out towards the outside of the metallized ceramic substrate through a plurality of welding terminals.
4. The power semiconductor module of claim 1, wherein the area of the metallized ceramic substrate is less than the area of the heat sink base plate.
5. The power semiconductor module of claim 1, wherein the metallized ceramic substrate is soldered to the upper surface of the heat-dissipating base plate by solder.
6. The power semiconductor module of claim 1, wherein the semiconductor chip, the bond resistor, and the thermistor are soldered to an emitter of the metallized ceramic substrate by solder.
7. The power semiconductor module of claim 1, wherein the semiconductor chip, the bond resistor, and the thermistor are connected to an upper surface of a metallized ceramic substrate by way of ultrasonic bonding.
8. The power semiconductor module of claim 1, wherein the semiconductor chip, the bonding resistor and the thermistor are respectively provided with a plurality of aluminum wires on upper surfaces thereof, and the semiconductor chip, the bonding resistor and the thermistor are connected through the aluminum wires; the upper surface of the semiconductor chip is provided with a copper bar, and the semiconductor chips are connected through the copper bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222754691.7U CN218647932U (en) | 2022-10-19 | 2022-10-19 | Power semiconductor module of ultrasonic welding lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222754691.7U CN218647932U (en) | 2022-10-19 | 2022-10-19 | Power semiconductor module of ultrasonic welding lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218647932U true CN218647932U (en) | 2023-03-17 |
Family
ID=85493965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222754691.7U Active CN218647932U (en) | 2022-10-19 | 2022-10-19 | Power semiconductor module of ultrasonic welding lead frame |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218647932U (en) |
-
2022
- 2022-10-19 CN CN202222754691.7U patent/CN218647932U/en active Active
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