CN115369385B - Manufacturing method of LED silicon dioxide film - Google Patents

Abstract

The invention discloses a method for making an LED silicon dioxide film. The cleaned silicon dioxide seed layer is chemically vapor deposited according to the first preset radio frequency power and the first preset flow rate of silane to obtain the perfect silicon dioxide. Seed layer, the first preset radio frequency power is greater than 80W, and the first preset flow rate is greater than 220 sccm; chemical vapor deposition is performed based on the perfect silicon dioxide seed layer to form a silicon dioxide film, using greater than 220 sccm Chemical vapor deposition of silane on the cleared silicon dioxide seed layer can change the film structure and improve the film defects of the seed layer, thereby increasing the refractive index of the final silicon dioxide film, thereby effectively increasing the brightness of the LED.

Description

A method for producing LED silicon dioxide film

Technical field

The present invention relates to the field of semiconductor electronic technology, and in particular to a method for manufacturing an LED silicon dioxide film.

Background technique

Gallium nitride-based light emitting diodes (LEDs) have the advantages of low functional loss, long life, and good reliability, and are widely used in signal lights, backlight displays, automotive lighting, indoor lighting and other fields. Silicon dioxide (SiO) has the characteristics of high hardness, good wear resistance, good insulation, high density, high light transmittance, low light scattering and absorption, strong corrosion resistance, and good dielectric (insulation). , using the compactness and insulation of the silicon dioxide film, the silicon dioxide film can be used as a masking film for the selective diffusion of impurities, and can be used as a protective layer and passivation layer on the surface of the device. Therefore, the refractive index of silicon dioxide will also be in Affects the brightness of LED to a certain extent;

The refractive index of the silicon dioxide films currently used in LEDs is mostly within 1.4% to 1.5%. At this refractive index, the brightness of LEDs is low.

Contents of the invention

The technical problem to be solved by the present invention is to provide a method for making an LED silicon dioxide film, which can effectively improve the brightness of the LED.

In order to solve the above technical problems, a technical solution adopted by the present invention is:

A method for making an LED silicon dioxide film, including the steps:

Chemical vapor deposition is performed on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power, and the first preset radio frequency power is greater than 80W, and a perfect silicon dioxide seed layer is obtained, The first preset flow rate is greater than 220 sccm;

Chemical vapor deposition is performed based on the perfected silicon dioxide seed layer to form a silicon dioxide film.

The beneficial effect of the present invention is that: chemical vapor deposition is performed on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain a perfected silicon dioxide seed layer. The silicon dioxide seed layer is chemical vapor deposited to form a silicon dioxide film. The first preset radio frequency power is greater than the radio frequency power of the existing chemical vapor deposition, and compared with the low silane used in the existing chemical vapor deposition, a silane greater than 220 sccm is used. Chemical vapor deposition of the cleared silicon dioxide seed layer can change the film structure and improve the film defects of the seed layer, thereby increasing the refractive index of the final silicon dioxide film, thereby effectively increasing the brightness of the LED.

Description of the drawings

Figure 1 is a flow chart of a method for manufacturing an LED silicon dioxide film according to an embodiment of the present invention.

Detailed ways

In order to describe the technical content, achieved objectives and effects of the present invention in detail, the following description will be made in conjunction with the embodiments and the accompanying drawings.

Referring to Figure 1, an embodiment of the present invention provides a method for manufacturing an LED silicon dioxide film, including the steps:

Chemical vapor deposition is performed on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power, and the first preset radio frequency power is greater than 80W, and a perfect silicon dioxide seed layer is obtained, The first preset flow rate is greater than 220 sccm;

Chemical vapor deposition is performed based on the perfected silicon dioxide seed layer to form a silicon dioxide film.

As can be seen from the above description, the beneficial effect of the present invention is to perform chemical vapor deposition on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain a perfect silicon dioxide seed layer. , chemical vapor deposition is performed based on the perfected silicon dioxide seed layer to form a silicon dioxide film. The first preset radio frequency power is greater than the radio frequency power of the existing chemical vapor deposition, and compared with the existing chemical vapor deposition using low silane, Using silane greater than 220 sccm to perform chemical vapor deposition on the cleared silicon dioxide seed layer can change the film structure and improve the film defects of the seed layer, thereby increasing the refractive index of the final silicon dioxide film, thereby effectively improving the performance of the LED. brightness.

Further, the first preset radio frequency power is set to 100~120W;

The first preset flow rate is set to 800-1000 sccm.

It can be seen from the above description that setting the first preset radio frequency power to 100-120W and setting the first preset flow rate to 800-1000 sccm can effectively improve film defects and increase the refractive index of the silicon dioxide film.

Further, the chemical vapor deposition of the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain the perfect silicon dioxide seed layer includes the following steps:

According to the radio frequency power of 100~120W, 800~1000sccm of nitrous oxide, 800~1000sccm of silane and 500~700sccm of nitrogen are introduced on the surface of the LED chip for 7~13s of chemical vapor deposition to form an initial silicon dioxide seed layer;

The gas ions on the surface of the initial silicon dioxide seed layer are removed by passing 900 sccm of nitrous oxide and a second preset flow rate of nitrogen according to a radio frequency power of 220 to 260 W to obtain a cleaned silicon dioxide seed layer.

It can be seen from the above description that the existing gas ion removal only uses nitrous oxide, but the present invention can more effectively remove gas ions on the surface of the initial silicon dioxide seed layer by using nitrous oxide and nitrogen, and reduce the gap between the film layers. stress to avoid film cracking.

Further, the second preset flow rate is set to 1150˜1350 sccm.

From the above description, it can be seen that using 1150 to 1350 sccm nitrogen can ensure that the gas ions on the surface of the initial silicon dioxide seed layer are completely removed, ensuring the structural stability of the film layer.

Further, according to the radio frequency power of 100 to 120W, 800 to 1000 sccm of nitrous oxide, 800 to 1000 sccm of silane and 500 to 700 sccm of nitrogen are passed through to perform chemical vapor deposition on the surface of the LED chip for 7 to 13 seconds to form an initial nitrous oxide. The steps before the silicon oxide seed layer include:

Inject 1150 to 1350 sccm of nitrous oxide to pretreat the surface of the LED chip for 50 to 70 seconds to obtain a pretreated LED chip;

According to the described method, 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen are passed through the RF power of 100-120 W to perform chemical vapor deposition on the surface of the LED chip for 7 to 13 seconds to form initial silicon dioxide seeds. Layers include:

According to the radio frequency power of 100 to 120W, 800 to 1000 sccm of nitrous oxide, 800 to 1000 sccm of silane and 500 to 700 sccm of nitrogen are passed into the pretreated LED chip surface for 7 to 13 seconds to conduct chemical vapor deposition to form an initial Silica seed layer.

From the above description, it can be seen that the nitrous oxide introduced at 1150 to 1350 sccm is used to pretreat the surface of the LED chip for 50 to 70 seconds in order to better form the initial silicon dioxide seed layer.

Further, chemical vapor deposition is performed on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain the perfect silicon dioxide seed layer including:

According to the first preset radio frequency power, the cleaned silicon dioxide seed layer is treated for the first preset time based on the first preset flow rate of silane, the third preset flow rate of nitrous oxide and the fourth preset flow rate of nitrogen gas. Chemical vapor deposition is used to obtain a perfect silica seed layer.

It can be seen from the above description that the cleaned silicon dioxide seed layer is subjected to the first preset radio frequency power based on the first preset flow rate of silane, the third preset flow rate of nitrous oxide and the fourth preset flow rate of nitrogen gas. A preset time chemical vapor deposition is used to more fully perfect the film defects of the seed layer and improve the refractive index of the silicon dioxide film.

Further, the chemical vapor deposition based on the perfected silicon dioxide seed layer to form a silicon dioxide film includes:

According to the radio frequency power of 220 to 260W, 800 to 1000 sccm of nitrous oxide and 1150 to 1350 sccm of nitrogen are passed to remove gas ions on the surface of the perfect silicon dioxide seed layer to obtain the final silicon dioxide seed layer;

Perform chemical vapor deposition on the final silicon dioxide seed layer using nitrous oxide, silane and nitrogen to form a silicon dioxide growth layer;

Nitrous oxide is used to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film.

It can be seen from the above description that according to the radio frequency power of 220 to 260W, nitrous oxide of 800 to 1000 sccm and nitrogen of 1150 to 1350 sccm are used to remove gas ions on the surface of the perfect silicon dioxide seed layer to reduce the risk of the seed layer and subsequent formation. The stress between the silicon dioxide growth layers avoids cracking of the film layer.

Further, the chemical vapor deposition of the final silicon dioxide seed layer using nitrous oxide, silane and nitrogen to form the silicon dioxide growth layer includes:

According to the radio frequency power of 100-120W, 800-1000sccm of nitrous oxide, 800-1000sccm of silane and 500-700sccm of nitrogen are passed into the final silicon dioxide seed layer for 70 seconds to perform chemical vapor deposition to form silicon dioxide. growth layer.

It can be seen from the above description that according to the radio frequency power of 100 to 120W, 800 to 1000 sccm of nitrous oxide, 800 to 1000 sccm of silane and 500 to 700 sccm of nitrogen are used to conduct chemical vapor deposition for 70 seconds on the final silicon dioxide seed layer. This can ensure the preparation quality of the growth layer.

Further, the use of nitrous oxide to clean gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film includes:

According to the radio frequency power of 220-260W, the fifth preset flow rate of nitrous oxide is passed into the nitrous oxide for 60 seconds to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film.

It can be seen from the above description that according to the radio frequency power of 220 to 260W, the fifth preset flow rate of nitrous oxide is passed through to clean the gas ions on the surface of the silicon dioxide growth layer for 60 seconds, which can prevent the charged ions from damaging the chip and ensure that the LED chip the quality of.

Further, the fifth preset flow rate is set to 700-900 sccm.

It can be seen from the above description that effective cleaning of gas ions on the surface of the silicon dioxide growth layer can be achieved.

The above-mentioned manufacturing method of LED silicon dioxide film of the present invention can be applied to LED manufacturing, which will be described below through specific implementations:

Embodiment 1

Please refer to Figure 1. A method for manufacturing an LED silicon dioxide film in this embodiment includes the steps:

S0. Inject nitrous oxide of 1150 to 1350 sccm (standard cubic centimeter per minute, volume flow unit, indicating the volume of gas flowing per unit time) to pretreat the surface of the LED chip for 50 to 70 seconds to obtain pretreatment. The final LED chip;

Specifically, under the conditions of 235 to 265°C, 1150 to 1350 sccm of nitrous oxide is introduced to pretreat the surface of the LED chip for 50 to 70 seconds to obtain a pretreated LED chip;

In an optional embodiment, under the condition of 250°C, 1250 sccm of nitrous oxide is introduced for 60 seconds to pretreat the surface of the LED chip to obtain a pretreated LED chip;

In another optional embodiment, under the condition of 235°C, 1150 sccm of nitrous oxide is introduced for 50 seconds to pretreat the surface of the LED chip to obtain a pretreated LED chip;

In another optional embodiment, under the condition of 265°C, 1350 sccm of nitrous oxide is introduced for 70 seconds to pretreat the surface of the LED chip to obtain a pretreated LED chip;

S1. According to the RF power of 100~120W, 800~1000sccm of nitrous oxide, 800~1000sccm of silane and 500~700sccm of nitrogen are introduced on the surface of the LED chip for 7 to 13 seconds to chemical vapor deposition to form initial silica seeds. layer;

Specifically, under the conditions of 235-265°C, 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen are passed into the pre-treated LED chip according to the radio frequency power of 100-120 W. Chemical vapor deposition is performed on the surface for 7 to 13 seconds to form an initial silica seed layer;

In an optional embodiment, under the condition of 250°C, 900 sccm of nitrous oxide, 900 sccm of silane and 600 sccm of nitrogen are passed through the surface of the pre-treated LED chip for 10 seconds at a radio frequency power of 110 W. Chemical vapor deposition to form an initial silica seed layer;

In another optional embodiment, under the condition of 235°C, 800 sccm of nitrous oxide, 800 sccm of silane and 500 sccm of nitrogen are introduced on the surface of the pre-treated LED chip according to the radio frequency power of 100 W. 7s of chemical vapor deposition to form an initial silica seed layer;

In another optional embodiment, under the condition of 265°C, 1000 sccm of nitrous oxide, 1000 sccm of silane and 700 sccm of nitrogen are introduced on the surface of the pre-treated LED chip according to the radio frequency power of 120 W. 13s of chemical vapor deposition to form an initial silica seed layer;

S2, pass in 900 sccm of nitrous oxide and a second preset flow rate of nitrogen according to a radio frequency power of 220 to 260 W to remove gas ions on the surface of the initial silicon dioxide seed layer, and obtain the cleaned silicon dioxide seed layer;

Specifically, under the conditions of 235 to 265°C, 900 sccm of nitrous oxide and a second preset flow rate of nitrogen are passed in according to a radio frequency power of 220 to 260 W to remove gas ions on the surface of the initial silicon dioxide seed layer for 120 seconds. Obtain the cleared silica seed layer;

Wherein, the second preset flow rate is set to 1150~1350 sccm;

In an optional embodiment, under the condition of 250° C., 900 sccm of nitrous oxide and 1250 sccm of nitrogen are passed into the RF power of 240 W to remove the gas ions on the surface of the initial silicon dioxide seed layer for 120 seconds, to obtain Cleaned silica seed layer;

In another optional embodiment, under the condition of 235° C., 900 sccm of nitrous oxide and 1150 sccm of nitrogen are passed into the RF power of 220 W to remove gas ions on the surface of the initial silicon dioxide seed layer for 120 seconds. Obtain the cleared silica seed layer;

In another optional embodiment, under the condition of 265°C, 900 sccm of nitrous oxide and 1350 sccm of nitrogen are passed in according to the radio frequency power of 260 W to remove the gas ions on the surface of the initial silicon dioxide seed layer for 120 seconds. Obtain the cleared silica seed layer;

S3. Perform chemical vapor deposition on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain a perfect silicon dioxide seed layer. The first preset radio frequency power is greater than 80W, the first preset flow rate is greater than 220sccm;

Specifically, under the conditions of 235-265°C, according to the first preset radio frequency power based on the first preset flow rate of silane, the third preset flow rate of nitrous oxide and the fourth preset flow rate of nitrogen, the cleaned The silicon dioxide seed layer is subjected to chemical vapor deposition for a first preset time to obtain a perfect silicon dioxide seed layer;

Wherein, the first preset radio frequency power is set to 100-120W; the first preset flow rate is set to 800-1000 sccm; the third preset flow rate is set to 800-1000 sccm, and the fourth preset flow rate is set to 800-1000 sccm. The preset flow rate is set to 500~700sccm, and the first preset time is set to 15~25s;

In an optional embodiment, the cleaned silicon dioxide seed layer is chemically treated with 110 W of radio frequency power based on 900 sccm of silane, 900 sccm of nitrous oxide and 600 sccm of nitrogen for 20 seconds at 250°C. Vapor deposition to obtain a perfect silica seed layer;

In another optional embodiment, the cleaned silicon dioxide seed layer is treated with 100 W of radio frequency power for 15 seconds based on 800 sccm of silane, 800 sccm of nitrous oxide and 500 sccm of nitrogen at 235°C. Chemical vapor deposition is used to obtain the perfect silica seed layer;

In another optional embodiment, the cleaned silicon dioxide seed layer is treated with 120 W of radio frequency power based on 1000 sccm of silane, 1000 sccm of nitrous oxide and 700 sccm of nitrogen for 25 seconds at 265°C. Chemical vapor deposition is used to obtain the perfect silica seed layer;

S4. Perform chemical vapor deposition based on the perfected silicon dioxide seed layer to form a silicon dioxide film, which specifically includes:

S41. According to the radio frequency power of 220 to 260W, 800 to 1000 sccm of nitrous oxide and 1150 to 1350 sccm of nitrogen are passed to remove the gas ions on the surface of the perfect silicon dioxide seed layer to obtain the final silicon dioxide seed layer;

Specifically, under the conditions of 235-265°C, nitrous oxide of 800-1000 sccm and nitrogen of 1150-1350 sccm are passed in according to the radio frequency power of 220-260 W to remove gas ions on the surface of the perfect silicon dioxide seed layer. 120s to obtain the final silica seed layer;

In an optional embodiment, under the condition of 250°C, 900 sccm of nitrous oxide and 1250 sccm of nitrogen are passed through according to the radio frequency power of 240 W to remove the gas ions on the surface of the perfect silicon dioxide seed layer for 120s. , to obtain the final silica seed layer;

In another optional embodiment, under the condition of 235° C., 800 sccm of nitrous oxide and 1150 sccm of nitrogen are passed into the RF power of 220 W to remove gas ions on the surface of the perfect silicon dioxide seed layer. 120s to obtain the final silica seed layer;

In another optional embodiment, under the condition of 265° C., 1000 sccm of nitrous oxide and 1350 sccm of nitrogen are passed into the RF power of 260 W to remove gas ions on the surface of the perfected silicon dioxide seed layer. 120s to obtain the final silica seed layer;

S42. Use nitrous oxide, silane and nitrogen to perform chemical vapor deposition on the final silicon dioxide seed layer to form a silicon dioxide growth layer;

Specifically, under the conditions of 235-265°C, 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen are introduced into the final silica seeds according to the radio frequency power of 100-120 W. The layer is subjected to chemical vapor deposition for 70 seconds to form a silicon dioxide growth layer;

In an optional embodiment, under the condition of 250° C., the final silicon dioxide seed layer is treated with 110W radio frequency power of 900sccm nitrous oxide, 900sccm silane and 600sccm nitrogen for 70s. Chemical vapor deposition to form a silicon dioxide growth layer;

In another optional embodiment, under the condition of 235° C., the final silicon dioxide seed layer is treated with 100 W of radio frequency power through 800 sccm of nitrous oxide, 800 sccm of silane and 500 sccm of nitrogen. 70s of chemical vapor deposition to form a silicon dioxide growth layer;

In another optional embodiment, under the condition of 265° C., the final silicon dioxide seed layer is treated with 120 W of radio frequency power through 1000 sccm of nitrous oxide, 1000 sccm of silane and 700 sccm of nitrogen. 70s of chemical vapor deposition to form a silicon dioxide growth layer;

S43. Use nitrous oxide to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film;

Specifically, under the conditions of 235-265°C, the fifth preset flow rate of nitrous oxide is introduced according to the radio frequency power of 220-260W for 60 seconds to clean the gas ions on the surface of the silicon dioxide growth layer to form nitrous oxide. silicon oxide film;

Wherein, the fifth preset flow rate is set to 700~900 sccm;

In an optional embodiment, under the condition of 250°C, 800 sccm of nitrous oxide is passed in according to the radio frequency power of 240 W for 60 seconds to clean the gas ions on the surface of the silicon dioxide growth layer to form dioxide. silicon film;

In another optional embodiment, under the condition of 235°C, 700 sccm of nitrous oxide is passed through according to the radio frequency power of 220 W for 60 seconds to clean the gas ions on the surface of the silicon dioxide growth layer to form nitrous oxide. silicon oxide film;

In another optional embodiment, under the condition of 265°C, 900 sccm of nitrous oxide is passed through according to the radio frequency power of 260W for 60 seconds to clean the gas ions on the surface of the silicon dioxide growth layer to form nitrous oxide. silicon oxide film;

At present, the refractive index of silicon dioxide films in LEDs is mostly between 1.4 and 1.5%. However, the refractive index of the silicon dioxide film produced by using the above-mentioned LED silicon dioxide film production method of the present invention is increased to 1.52 to 1.55%. As shown in Table 1, the brightness of the LED is improved by increasing the refractive index.

Table 1 Comparison of experimental data between silicon dioxide films of the prior art and silicon dioxide films of the present invention

In summary, the present invention provides a method for making an LED silicon dioxide film. According to a radio frequency power of 220 to 260W, 900 sccm of nitrous oxide and a second preset flow rate of nitrogen are introduced to remove the initial silicon dioxide. The gas ions on the surface of the seed layer are used to obtain a cleaned silicon dioxide seed layer; the cleaned silicon dioxide seed layer is chemically vapor deposited according to the first preset radio frequency power and based on the first preset flow rate of silane to obtain a perfected silicon dioxide seed layer. Silicon dioxide seed layer, the first preset radio frequency power is greater than 80W, and the first preset flow rate is greater than 220 sccm; chemical vapor deposition is performed based on the perfect silicon dioxide seed layer to form a silicon dioxide film; The first preset radio frequency power is set to 100-120W; the first preset flow rate is set to 800-1000 sccm; the gas on the surface of the initial silicon dioxide seed layer can be more effectively removed by using nitrous oxide and nitrogen ions to reduce the stress between film layers and avoid film cracking; compared with the existing chemical vapor deposition using low silane, using silane greater than 220 sccm for chemical vapor deposition of the cleared silica seed layer can change the film formation The structure improves the film defects of the seed layer, thereby improving the refractive index of the final silicon dioxide film, thereby effectively increasing the brightness of the LED.

The above are only embodiments of the present invention, and do not limit the patent scope of the present invention. Any equivalent transformations made using the contents of the description and drawings of the present invention, or directly or indirectly applied in related technical fields, are equally included in within the scope of patent protection of this invention.

Claims (4)

1. The manufacturing method of the LED silicon dioxide film is characterized by comprising the following steps:

introducing 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen gas to perform chemical vapor deposition for 7-13 s on the surface of the LED chip according to the radio frequency power of 100-120W to form an initial silicon dioxide seed layer;

introducing 900sccm of nitrous oxide and a second preset flow of nitrogen gas according to the radio frequency power of 220-260W to remove gas ions on the surface of the initial silicon dioxide seed layer, so as to obtain a removed silicon dioxide seed layer;

performing chemical vapor deposition on the cleaned silicon dioxide seed layer for 15-25 seconds based on 800-1000 sccm silane, 800-1000 sccm nitrous oxide and 500-700 sccm nitrogen according to the radio frequency power of 100-120W to obtain a complete silicon dioxide seed layer;

introducing 800-1000 sccm of nitrous oxide and 1150-1350 sccm of nitrogen according to 220-260W of radio frequency power to remove gas ions on the surface of the perfect silicon dioxide seed layer, so as to obtain a final silicon dioxide seed layer;

introducing 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen according to the radio frequency power of 100-120W, and performing chemical vapor deposition on the final silicon dioxide seed layer for 70s to form a silicon dioxide growth layer;

and introducing nitrous oxide with a fifth preset flow according to the radio frequency power of 220-260W, and cleaning gas ions on the surface of the silicon dioxide growth layer according to the time of 60s to form a silicon dioxide film.

2. The method for manufacturing the LED silica film according to claim 1, wherein the second preset flow rate is 1150-1350 sccm.

3. The method for manufacturing an LED silicon dioxide film according to claim 1, wherein the steps of introducing 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen gas to form an initial silicon dioxide seed layer on the surface of the LED chip by performing chemical vapor deposition for 7-13 s at a radio frequency power of 100-120 w, and before forming the initial silicon dioxide seed layer, comprise:

introducing 1150-1350 sccm of nitrous oxide to pretreat the surface of the LED chip according to the time of 50-70 s to obtain a pretreated LED chip;

introducing 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen gas into the surface of the LED chip according to the radio frequency power of 100-120W for 7-13 s of chemical vapor deposition, and forming an initial silicon dioxide seed layer comprises:

and introducing 800-1000 sccm of nitrous oxide, 800-1000 sccm of silane and 500-700 sccm of nitrogen gas according to the radio frequency power of 100-120W, and performing chemical vapor deposition for 7-13 s on the surface of the pretreated LED chip to form an initial silicon dioxide seed layer.

4. The method for manufacturing the LED silicon dioxide film according to claim 1, wherein the fifth preset flow is set to 700-900 sccm.