CN115369385A - Manufacturing method of LED silicon dioxide film - Google Patents

Abstract

The invention discloses a method for manufacturing an LED silicon dioxide film. According to the first preset radio frequency power and based on the first preset flow rate of silane, chemical vapor deposition is carried out on the cleaned silicon dioxide seed layer to obtain the perfected silicon dioxide. For the seed layer, the first preset radio frequency power is greater than 80W, and the first preset flow rate is greater than 220sccm; chemical vapor deposition is carried out based on the perfected silicon dioxide seed layer to form a silicon dioxide film, and a silicon dioxide film greater than 220sccm is used The chemical vapor deposition of silane on the cleaned silicon dioxide seed layer can change the film structure and improve the film defects of the seed layer, so as to increase the refractive index of the final silicon dioxide film, thereby effectively improving the brightness of the LED.

Description

A kind of preparation method of LED silicon dioxide thin film

technical field

The invention relates to the technical field of semiconductor electronics, in particular to a method for manufacturing an LED silicon dioxide film.

Background technique

Gallium nitride-based light emitting diodes (Light Emitting Diodes, LEDs) have the advantages of low functional loss, long life, and good reliability, and are widely used in signal lights, backlight displays, automotive lighting, and indoor lighting. Silicon dioxide (SiO) has the characteristics of high hardness, good wear resistance, good insulation, high density, high light transmittance, less scattering and absorption of light, strong corrosion resistance and good dielectric (insulation) , the silicon dioxide film can be used as a masking film for the selective diffusion of impurities by utilizing the compactness and insulation of the silicon dioxide film, so as to be used as a protective layer and a passivation layer on the surface of the device. Therefore, the refractive index of silicon dioxide will also be in Affect the brightness of LED to a certain extent;

At present, the refractive index of silicon dioxide thin films used in LEDs is mostly within 1.4% to 1.5%. Under this refractive index, the brightness of LEDs is low.

Contents of the invention

The technical problem to be solved by the present invention is to provide a method for manufacturing an LED silicon dioxide film, which can effectively improve the brightness of the LED.

In order to solve the above-mentioned technical problems, a kind of technical scheme that the present invention adopts is:

A method for making an LED silicon dioxide film, comprising the steps of:

Perform chemical vapor deposition on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain a perfected silicon dioxide seed layer, the first preset radio frequency power is greater than 80W, The first preset flow rate is greater than 220 sccm;

Carrying out chemical vapor deposition based on the perfected silicon dioxide seed layer to form a silicon dioxide film.

The beneficial effects of the present invention are: according to the first preset radio frequency power based on the silane of the first preset flow rate, chemical vapor deposition is performed on the cleaned silicon dioxide seed layer to obtain a perfected silicon dioxide seed layer, based on the perfected silicon dioxide seed layer The silicon dioxide seed layer is chemically vapor deposited to form a silicon dioxide film. The first preset radio frequency power is greater than the radio frequency power of the existing chemical vapor deposition, and compared with the low silane used in the existing chemical vapor deposition, the use of silane greater than 220sccm Chemical vapor deposition of the removed silicon dioxide seed layer can change the film structure and improve the film defects of the seed layer, so as to increase the refractive index of the final silicon dioxide film, thereby effectively improving the brightness of the LED.

Description of drawings

FIG. 1 is a flow chart of the steps of a method for manufacturing an LED silicon dioxide film according to an embodiment of the present invention.

Detailed ways

In order to describe the technical content, achieved goals and effects of the present invention in detail, the following descriptions will be made in conjunction with the embodiments and accompanying drawings.

Please refer to Fig. 1, an embodiment of the present invention provides a method for manufacturing an LED silicon dioxide film, including steps:

Perform chemical vapor deposition on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain a perfected silicon dioxide seed layer, the first preset radio frequency power is greater than 80W, The first preset flow rate is greater than 220 sccm;

Carrying out chemical vapor deposition based on the perfected silicon dioxide seed layer to form a silicon dioxide film.

From the above description, it can be seen that the beneficial effect of the present invention is that the silicon dioxide seed layer after removal is chemically vapor deposited according to the first preset radio frequency power based on the first preset flow rate of silane to obtain a perfected silicon dioxide seed layer , based on the perfect silicon dioxide seed layer for chemical vapor deposition to form a silicon dioxide film, the first preset radio frequency power is greater than the radio frequency power of the existing chemical vapor deposition, and compared with the existing chemical vapor deposition using low silane, Using silane greater than 220sccm to perform chemical vapor deposition on the cleaned silicon dioxide seed layer can change the film structure and improve the film defects of the seed layer, thereby increasing the refractive index of the final silicon dioxide film, thereby effectively improving LED performance. brightness.

Further, the first preset radio frequency power is set to 100-120W;

The first preset flow rate is set to 800-1000 sccm.

It can be seen from the above description that setting the first preset radio frequency power to 100-120W and setting the first preset flow rate to 800-1000 sccm can effectively improve the film layer defects and increase the refractive index of the silicon dioxide film.

Further, performing chemical vapor deposition on the cleaned silicon dioxide seed layer according to the first preset radio frequency power based on the first preset flow rate of silane, before obtaining the perfect silicon dioxide seed layer, includes steps:

According to the radio frequency power of 100-120W, nitrous oxide of 800-1000sccm, silane of 800-1000sccm and nitrogen of 500-700sccm are passed into the surface of the LED chip for 7-13s to form the initial silicon dioxide seed layer;

Purging gas ions on the surface of the initial silicon dioxide seed layer by passing 900 sccm of nitrous oxide and nitrogen gas at a second preset flow rate according to a radio frequency power of 220-260 W to obtain a silicon dioxide seed layer after removal.

As can be seen from the above description, the existing scavenging gas ions only use nitrous oxide, but the present invention can more effectively remove the gas ions on the surface of the initial silicon dioxide seed layer by using nitrous oxide and nitrogen, and reduce the interlayer gap. Stress to avoid cracking of the film layer.

Further, the second preset flow rate is set to 1150-1350 sccm.

It can be seen from the above description that the use of 1150-1350 sccm of nitrogen gas can ensure that the gas ions on the surface of the initial silicon dioxide seed layer are completely removed, ensuring the structural stability of the film layer.

Further, according to the radio frequency power of 100-120W, nitrous oxide of 800-1000 sccm, silane of 800-1000 sccm and nitrogen of 500-700 sccm are passed on the surface of the LED chip for 7-13 seconds to form the initial dinitrogen monoxide. Before the silicon oxide seed layer includes steps:

Pretreat the surface of the LED chip by injecting 1150-1350 sccm of nitrous oxide for 50-70 seconds to obtain the pre-treated LED chip;

According to the radio frequency power of 100-120W, nitrous oxide of 800-1000 sccm, silane of 800-1000 sccm and nitrogen of 500-700 sccm are passed into the surface of the LED chip for 7-13 seconds to form the initial silicon dioxide seed. Layers include:

According to the radio frequency power of 100-120W, nitrous oxide of 800-1000sccm, silane of 800-1000sccm and nitrogen of 500-700sccm are passed into the surface of the pretreated LED chip for 7-13s to form the initial Silica seed layer.

It can be seen from the above description that the surface of the LED chip is pretreated by injecting 1150-1350 sccm of nitrous oxide for 50-70 seconds, so as to better form the initial silicon dioxide seed layer.

Further, the chemical vapor deposition is performed on the cleaned silicon dioxide seed layer according to the first preset radio frequency power based on the first preset flow rate of silane, and the perfected silicon dioxide seed layer includes:

According to the first preset radio frequency power based on the silane of the first preset flow rate, the nitrous oxide of the third preset flow rate and the nitrogen gas of the fourth preset flow rate, the silicon dioxide seed layer after removal is subjected to the first preset time. Chemical vapor deposition to obtain a perfected silicon dioxide seed layer.

It can be seen from the above description that the silicon dioxide seed layer after removal is subjected to the first preset flow rate of silane, the third preset flow rate of nitrous oxide and the fourth preset flow rate of nitrogen according to the first preset radio frequency power. Chemical vapor deposition for a preset time, so as to more fully perfect the film defects of the seed layer and increase the refractive index of the silicon dioxide film.

Further, performing chemical vapor deposition based on the perfected silicon dioxide seed layer to form a silicon dioxide film includes:

According to the radio frequency power of 220-260W, nitrous oxide of 800-1000sccm and nitrogen gas of 1150-1350sccm are passed through to remove the gas ions on the surface of the perfected silicon dioxide seed layer to obtain the final silicon dioxide seed layer;

chemical vapor deposition of the final silicon dioxide seed layer using nitrous oxide, silane and nitrogen to form a silicon dioxide growth layer;

Nitrous oxide is used to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film.

It can be known from the above description that according to the radio frequency power of 220-260W, nitrous oxide of 800-1000 sccm and nitrogen gas of 1150-1350 sccm are passed through to remove the gas ions on the surface of the perfect silicon dioxide seed layer, so as to reduce the impact of the seed layer on the subsequent formation. The stress between the silicon dioxide growth layers avoids cracking of the film layer.

Further, the chemical vapor deposition of the final silicon dioxide seed layer by using nitrous oxide, silane and nitrogen to form a silicon dioxide growth layer includes:

According to the radio frequency power of 100-120W, nitrous oxide of 800-1000sccm, silane of 800-1000sccm and nitrogen of 500-700sccm are passed into the final silicon dioxide seed layer for 70s to form silicon dioxide. growth layer.

It can be seen from the above description that according to the radio frequency power of 100-120W, nitrous oxide of 800-1000 sccm, silane of 800-1000 sccm and nitrogen of 500-700 sccm are passed to the final silicon dioxide seed layer for 70 seconds. This can guarantee the preparation quality of the growth layer.

Further, the use of nitrous oxide to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film includes:

According to the radio frequency power of 220-260W, the nitrous oxide at the fifth preset flow rate is passed to clean the gas ions on the surface of the silicon dioxide growth layer for 60 seconds to form a silicon dioxide film.

It can be seen from the above description that according to the radio frequency power of 220-260W, the nitrous oxide at the fifth preset flow rate can be used to clean the gas ions on the surface of the silicon dioxide growth layer according to the time of 60s, which can prevent the charged ions from damaging the chip and ensure that the LED chip the quality of.

Further, the fifth preset flow rate is set to 700-900 sccm.

It can be seen from the above description that the effective cleaning of gas ions on the surface of the silicon dioxide growth layer can be realized.

The above-mentioned manufacturing method of a kind of LED silicon dioxide thin film of the present invention can be applicable to LED making, and is described below through specific embodiment:

Embodiment one

Please refer to Fig. 1, a kind of manufacturing method of LED silicon dioxide thin film of the present embodiment, comprises steps:

S0. Inject nitrous oxide of 1150-1350 sccm (standard cubic centimeter per minute, volume flow unit, indicating the volume of gas flowing per unit time) to pre-treat the surface of the LED chip for 50-70 s to obtain pre-treated After the LED chip;

Specifically, under the condition of 235-265° C., nitrous oxide of 1150-1350 sccm is introduced to pretreat the surface of the LED chip for 50-70 seconds to obtain the pretreated LED chip;

In an optional embodiment, under the condition of 250° C., 1250 sccm of nitrous oxide is injected to pretreat the surface of the LED chip for 60 seconds to obtain a pretreated LED chip;

In another optional embodiment, under the condition of 235° C., 1150 sccm of nitrous oxide is injected to pretreat the surface of the LED chip for 50 seconds to obtain a pretreated LED chip;

In another optional embodiment, under the condition of 265° C., 1350 sccm of nitrous oxide is injected to pretreat the surface of the LED chip for 70 seconds to obtain a pretreated LED chip;

S1. According to the radio frequency power of 100-120W, nitrous oxide of 800-1000sccm, silane of 800-1000sccm and nitrogen of 500-700sccm are passed on the surface of the LED chip for 7-13s to form the initial silicon dioxide seed. Floor;

Specifically, under the condition of 235-265°C, nitrous oxide of 800-1000 sccm, silane of 800-1000 sccm and nitrogen of 500-700 sccm are passed into the LED chip after the pretreatment according to the radio frequency power of 100-120W. The surface is subjected to chemical vapor deposition for 7-13s to form an initial silicon dioxide seed layer;

In an optional embodiment, under the condition of 250°C, 900 sccm of nitrous oxide, 900 sccm of silane and 600 sccm of nitrogen are passed through the surface of the pretreated LED chip for 10 seconds according to the radio frequency power of 110 W. chemical vapor deposition to form an initial silica seed layer;

In another optional embodiment, under the condition of 235°C, according to the radio frequency power of 100W, the nitrous oxide of 800 sccm, the silane of 800 sccm and the nitrogen of 500 sccm are passed through the surface of the LED chip after the pretreatment. 7s chemical vapor deposition to form an initial silica seed layer;

In another optional embodiment, under the condition of 265° C., 1000 sccm of nitrous oxide, 1000 sccm of silane and 700 sccm of nitrogen are passed through the surface of the pretreated LED chip according to 120 W of radio frequency power. 13s of chemical vapor deposition to form an initial silicon dioxide seed layer;

S2. Purging gas ions on the surface of the initial silicon dioxide seed layer by passing 900 sccm of nitrous oxide and a second preset flow rate of nitrogen according to a radio frequency power of 220 to 260 W to obtain a silicon dioxide seed layer after removal;

Specifically, under the condition of 235-265°C, according to the radio frequency power of 220-260W, 900sccm of nitrous oxide and nitrogen gas of the second preset flow rate are passed through to remove the gas ions on the surface of the initial silicon dioxide seed layer for 120s, Obtain the silicon dioxide seed layer after removal;

Wherein, the second preset flow rate is set to 1150-1350 sccm;

In an optional embodiment, under the condition of 250° C., according to the radio frequency power of 240 W, 900 sccm of nitrous oxide and 1250 sccm of nitrogen gas are passed through to remove the gas ions on the surface of the initial silicon dioxide seed layer for 120 seconds, to obtain Silica seed layer after removal;

In another optional embodiment, under the condition of 235° C., 900 sccm of nitrous oxide and 1150 sccm of nitrogen gas are passed through according to the radio frequency power of 220 W to remove the gas ions on the surface of the initial silicon dioxide seed layer for 120 seconds, Obtain the silicon dioxide seed layer after removal;

In another optional embodiment, under the condition of 265° C., 900 sccm of nitrous oxide and 1350 sccm of nitrogen gas are passed through according to the radio frequency power of 260 W to remove the gas ions on the surface of the initial silicon dioxide seed layer for 120 seconds, Obtain the silicon dioxide seed layer after removal;

S3. Perform chemical vapor deposition on the cleaned silicon dioxide seed layer based on the first preset radio frequency power based on the first preset flow rate of silane to obtain a perfected silicon dioxide seed layer, the first preset radio frequency power is greater than 80W, the first preset flow is greater than 220sccm;

Specifically, under the condition of 235-265°C, according to the first preset radio frequency power based on the first preset flow rate of silane, the third preset flow rate of nitrous oxide and the fourth preset flow rate of nitrogen on the purged The silicon dioxide seed layer is subjected to chemical vapor deposition for a first preset time to obtain a perfected silicon dioxide seed layer;

Wherein, the first preset radio frequency power is set to 100-120W; the first preset flow rate is set to 800-1000 sccm; the third preset flow rate is set to 800-1000 sccm, and the fourth The preset flow rate is set to 500-700sccm, and the first preset time is set to 15-25s;

In an optional embodiment, under the condition of 250° C., according to the radio frequency power of 110 W, based on 900 sccm of silane, 900 sccm of nitrous oxide and 600 sccm of nitrogen, the silicon dioxide seed layer after removal is chemically treated for 20 seconds. Vapor deposition to obtain a perfected silicon dioxide seed layer;

In another optional embodiment, under the condition of 235°C, according to 100W radio frequency power, based on 800sccm of silane, 800sccm of nitrous oxide and 500sccm of nitrogen, the cleaned silicon dioxide seed layer is treated for 15s. Chemical vapor deposition to obtain a perfect silicon dioxide seed layer;

In another optional embodiment, under the condition of 265°C, according to 120W radio frequency power, based on 1000sccm of silane, 1000sccm of nitrous oxide and 700sccm of nitrogen, the silicon dioxide seed layer after removal is subjected to 25s Chemical vapor deposition to obtain a perfect silicon dioxide seed layer;

S4. Carrying out chemical vapor deposition based on the improved silicon dioxide seed layer to form a silicon dioxide film, specifically including:

S41, passing 800-1000 sccm of nitrous oxide and 1150-1350 sccm of nitrogen according to the radio frequency power of 220-260 W to remove the gas ions on the surface of the perfected silicon dioxide seed layer to obtain the final silicon dioxide seed layer;

Specifically, under the condition of 235-265°C, nitrous oxide of 800-1000 sccm and nitrogen gas of 1150-1350 sccm are passed through according to the radio frequency power of 220-260W to remove the gas ions on the surface of the perfected silicon dioxide seed layer 120s to obtain the final silicon dioxide seed layer;

In an optional embodiment, under the condition of 250° C., 900 sccm of nitrous oxide and 1250 sccm of nitrogen gas are passed through according to the radio frequency power of 240 W to remove the gas ions on the surface of the perfected silicon dioxide seed layer for 120 seconds. , to obtain the final silica seed layer;

In another optional embodiment, under the condition of 235°C, according to the radio frequency power of 220W, 800sccm of nitrous oxide and 1150sccm of nitrogen are passed through to remove the gas ions on the surface of the perfected silicon dioxide seed layer 120s to obtain the final silicon dioxide seed layer;

In another optional embodiment, under the condition of 265°C, according to the radio frequency power of 260W, 1000 sccm of nitrous oxide and 1350 sccm of nitrogen gas are passed through to remove the gas ions on the surface of the perfected silicon dioxide seed layer 120s to obtain the final silicon dioxide seed layer;

S42, using nitrous oxide, silane and nitrogen to perform chemical vapor deposition on the final silicon dioxide seed layer to form a silicon dioxide growth layer;

Specifically, under the condition of 235-265°C, nitrous oxide of 800-1000 sccm, silane of 800-1000 sccm and nitrogen of 500-700 sccm are passed into the final silicon dioxide seed according to the radio frequency power of 100-120W. The layer is subjected to chemical vapor deposition for 70s to form a silicon dioxide growth layer;

In an optional embodiment, under the condition of 250° C., nitrous oxide of 900 sccm, silane of 900 sccm and nitrogen of 600 sccm are injected into the final silicon dioxide seed layer according to 110 W of radio frequency power for 70 seconds. chemical vapor deposition to form a silicon dioxide growth layer;

In another optional embodiment, under the condition of 235°C, according to the radio frequency power of 100W, 800sccm of nitrous oxide, 800sccm of silane and 500sccm of nitrogen are passed through the final silicon dioxide seed layer. 70s of chemical vapor deposition to form a silicon dioxide growth layer;

In another optional embodiment, under the condition of 265° C., 1000 sccm of nitrous oxide, 1000 sccm of silane and 700 sccm of nitrogen are passed through 120 W of radio frequency power to treat the final silicon dioxide seed layer. 70s of chemical vapor deposition to form a silicon dioxide growth layer;

S43, using nitrous oxide to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film;

Specifically, under the condition of 235-265°C, according to the radio frequency power of 220-260W, the nitrous oxide at the fifth preset flow rate is passed through for 60s to clean the gas ions on the surface of the silicon dioxide growth layer to form dinitrogen monoxide. Silicon oxide film;

Wherein, the fifth preset flow rate is set to 700-900 sccm;

In an optional embodiment, under the condition of 250°C, according to the radio frequency power of 240W, nitrous oxide of 800 sccm is passed through for 60 seconds to clean the gas ions on the surface of the silicon dioxide growth layer to form Silicon film;

In another optional implementation manner, under the condition of 235°C, according to the radio frequency power of 220W, 700sccm of nitrous oxide is passed through for 60s to clean the gas ions on the surface of the silicon dioxide growth layer to form dinitrogen oxide. Silicon oxide film;

In another optional implementation manner, under the condition of 265°C, according to the radio frequency power of 260W, nitrous oxide of 900 sccm is passed through for 60 seconds to clean the gas ions on the surface of the silicon dioxide growth layer to form dinitrogen oxide. Silicon oxide film;

At present, the refractive index of silicon dioxide thin films in LEDs is mostly between 1.4% and 1.5%, but the refractive index of silicon dioxide thin films produced by using the above-mentioned LED silicon dioxide thin film manufacturing method of the present invention is increased to 1.52% to 1.55%. Between, as shown in Table 1, the brightness of LED is improved by increasing the refractive index.

The silicon dioxide thin film of table 1 prior art and the experimental data comparison table of silicon dioxide thin film of the present invention

To sum up, the present invention provides a method for manufacturing an LED silicon dioxide film, which involves feeding 900 sccm of nitrous oxide and a second preset flow rate of nitrogen to remove the initial silicon dioxide according to a radio frequency power of 220-260W. Gas ions on the surface of the seed layer to obtain a silicon dioxide seed layer after removal; according to the first preset radio frequency power based on the silane of the first preset flow rate, the silicon dioxide seed layer after removal is chemically vapor deposited to obtain a perfected silicon dioxide seed layer. For the silicon dioxide seed layer, the first preset radio frequency power is greater than 80W, and the first preset flow rate is greater than 220 sccm; chemical vapor deposition is performed based on the perfected silicon dioxide seed layer to form a silicon dioxide film; The first preset radio frequency power is set to 100-120W; the first preset flow rate is set to 800-1000 sccm; the gas on the surface of the initial silicon dioxide seed layer can be removed more effectively by using nitrous oxide and nitrogen ions, reduce the stress between the film layers, and avoid film cracking; compared with the low silane used in the existing chemical vapor deposition, the use of silane greater than 220sccm for chemical vapor deposition on the cleaned silicon dioxide seed layer can change the film formation structure, improve the film defects of the seed layer, so as to increase the refractive index of the final silicon dioxide film, thereby effectively improving the brightness of the LED.

The above description is only an embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent transformations made by using the description of the present invention and the contents of the accompanying drawings, or directly or indirectly used in related technical fields, are all included in the same principle. Within the scope of patent protection of the present invention.

Claims (10)

1. a kind of manufacture method of LED silicon dioxide thin film is characterized in that, comprises steps: Perform chemical vapor deposition on the cleaned silicon dioxide seed layer based on the first preset flow rate of silane according to the first preset radio frequency power to obtain a perfected silicon dioxide seed layer, the first preset radio frequency power is greater than 80W, The first preset flow rate is greater than 220 sccm; Carrying out chemical vapor deposition based on the perfected silicon dioxide seed layer to form a silicon dioxide film. 2. The method for manufacturing a silicon dioxide film for LED according to claim 1, wherein the first preset radio frequency power is set to 100-120W; The first preset flow rate is set to 800-1000 sccm. 3. The manufacturing method of a kind of LED silicon dioxide film according to claim 1, characterized in that, the silicon dioxide seed layer after the removal of the silane based on the first preset flow rate according to the first preset radio frequency power is characterized in that Carrying out chemical vapor deposition, including steps before obtaining the perfect silicon dioxide seed layer: According to the radio frequency power of 100-120W, nitrous oxide of 800-1000sccm, silane of 800-1000sccm and nitrogen of 500-700sccm are passed into the surface of the LED chip for 7-13s to form the initial silicon dioxide seed layer; Purging gas ions on the surface of the initial silicon dioxide seed layer by passing 900 sccm of nitrous oxide and nitrogen gas at a second preset flow rate according to a radio frequency power of 220-260 W to obtain a silicon dioxide seed layer after removal. 4 . The method for manufacturing an LED silicon dioxide film according to claim 3 , wherein the second preset flow rate is set to 1150-1350 sccm. 5. The manufacturing method of a kind of LED silicon dioxide film according to claim 3, characterized in that, according to the radio frequency power of 100～120W, nitrous oxide of 800～1000sccm, silane of 800～1000sccm and 500-700 sccm of nitrogen gas is deposited on the surface of the LED chip for 7-13 seconds to form the initial silicon dioxide seed layer, including the following steps: Pretreat the surface of the LED chip by injecting 1150-1350 sccm of nitrous oxide for 50-70 seconds to obtain the pre-treated LED chip; According to the radio frequency power of 100-120W, nitrous oxide of 800-1000 sccm, silane of 800-1000 sccm and nitrogen of 500-700 sccm are passed into the surface of the LED chip for 7-13 seconds to form the initial silicon dioxide seed. Layers include: According to the radio frequency power of 100-120W, nitrous oxide of 800-1000sccm, silane of 800-1000sccm and nitrogen of 500-700sccm are passed into the surface of the pretreated LED chip for 7-13s to form the initial Silica seed layer. 6. The manufacturing method of a kind of LED silicon dioxide film according to claim 1, characterized in that, the silicon dioxide seed layer after the removal of the silane based on the first preset flow rate according to the first preset radio frequency power Chemical vapor deposition is carried out to obtain a refined silica seed layer consisting of: According to the first preset radio frequency power based on the silane of the first preset flow rate, the nitrous oxide of the third preset flow rate and the nitrogen gas of the fourth preset flow rate, the silicon dioxide seed layer after removal is subjected to the first preset time. Chemical vapor deposition to obtain a perfected silicon dioxide seed layer. 7. The manufacturing method of a kind of LED silicon dioxide thin film according to claim 1, characterized in that, said performing chemical vapor deposition based on said perfect silicon dioxide seed layer, forming a silicon dioxide thin film comprises: According to the radio frequency power of 220-260W, nitrous oxide of 800-1000sccm and nitrogen gas of 1150-1350sccm are passed through to remove the gas ions on the surface of the perfected silicon dioxide seed layer to obtain the final silicon dioxide seed layer; chemical vapor deposition of the final silicon dioxide seed layer using nitrous oxide, silane and nitrogen to form a silicon dioxide growth layer; Nitrous oxide is used to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film. 8. the manufacture method of a kind of LED silicon dioxide thin film according to claim 7, is characterized in that, described use dinitrogen monoxide, silane and nitrogen to carry out chemical vapor deposition to described final silicon dioxide seed layer, Forming the silicon dioxide growth layer includes: According to the radio frequency power of 100-120W, nitrous oxide of 800-1000sccm, silane of 800-1000sccm and nitrogen of 500-700sccm are passed into the final silicon dioxide seed layer for 70s to form silicon dioxide. growth layer. 9. The manufacturing method of a kind of LED silicon dioxide film according to claim 7, characterized in that, the use of dinitrogen monoxide to clean the gas ions on the surface of the silicon dioxide growth layer to form a silicon dioxide film comprises : According to the radio frequency power of 220-260W, the nitrous oxide at the fifth preset flow rate is passed to clean the gas ions on the surface of the silicon dioxide growth layer for 60 seconds to form a silicon dioxide film. 10 . The method for manufacturing an LED silicon dioxide film according to claim 9 , wherein the fifth preset flow rate is set to 700-900 sccm. 11 .

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