CN115200729A - Array type thin film temperature difference sensor and preparation method thereof - Google Patents

Abstract

The invention discloses an array type thin film temperature difference sensor and a preparation method thereof, the array type thin film temperature difference sensor comprises a substrate, an anode sensitive layer and a cathode sensitive layer, the anode sensitive layer comprises a first anode, a second anode, a third anode and a fourth anode, the cathode sensitive layer comprises a first cathode, a second cathode and a third cathode, one end of the first anode is connected with one end of the first cathode through a first hot junction, one end of the second anode is connected with one end of the second cathode through a second hot junction, the other end of the first cathode and one end of the third cathode are both connected with one end of the third anode through a third hot junction, the other end of the second cathode and the other end of the third cathode are both connected with one end of the fourth anode through a fourth hot junction, the other end of the first anode and the other end of the third anode form a first test end and a third test end respectively, and the other end of the second anode and the other end of the fourth anode form a second test end and a fourth test end respectively. The method can be used for judging the temperature uniformity of the acid-base pipeline and has high test reliability.

Description

Array type thin film temperature difference sensor and preparation method thereof

technical field

The invention relates to the technical field of micro-electromechanical manufacturing and sensors, in particular to an array type thin film temperature difference sensor and a preparation method thereof.

Background technique

Due to safety issues, acid-base pipelines have high requirements for temperature uniformity. Therefore, it is necessary to measure the temperature difference of the acid-base pipeline. The traditional temperature sensor that can measure the temperature difference in the area of acid and alkali pipelines, in the actual test, the test results are inaccurate, the test accuracy is difficult to meet the requirements, and the reliability is poor.

SUMMARY OF THE INVENTION

Based on this, in view of the problems of the traditional temperature sensor that can measure the temperature difference in the acid-base pipeline area, in the actual test, the test result is inaccurate, the test accuracy is difficult to meet the requirements, and the reliability is poor, an embodiment of the present invention provides an array type thin film temperature difference sensor. The array type thin film temperature difference sensor according to an embodiment of the present invention can judge whether the uniformity of the temperature of the acid-base pipeline meets the requirements, and the test reliability is high.

An array type thin film temperature difference sensor includes a substrate, a positive electrode sensitive layer and a negative electrode sensitive layer, the positive electrode sensitive layer and the negative electrode sensitive layer are located on the substrate; the positive electrode sensitive layer includes a first positive electrode and a second positive electrode , a third positive electrode and a fourth positive electrode, the negative electrode sensitive layer includes a first negative electrode, a second negative electrode and a third negative electrode, one end of the first positive electrode is connected to one end of the first negative electrode through a first thermal junction, One end of the second positive electrode is connected to one end of the second negative electrode through a second thermal junction, and the other end of the first negative electrode and one end of the third negative electrode are connected to one end of the third positive electrode through a second thermal junction. Three hot junctions are connected, the other end of the second negative electrode and the other end of the third negative electrode are both connected to one end of the fourth positive electrode through a fourth hot junction, and the other end of the first positive electrode is connected to the The other end of the third positive electrode is opposite to each other and forms a first test end and a third test end, and the other end of the second positive electrode is opposite to the other end of the fourth positive electrode and forms a second test end and a third test end, respectively. Four test terminals.

In some embodiments, the preparation material of the positive electrode sensitive layer is selected from one or more of W-5Re thermocouple material, Pt-10Rh thermocouple material, Pt-13Rh thermocouple material and Ni-10Cr thermocouple material kind.

In some of the embodiments, the preparation material of the negative electrode sensitive layer is selected from one or more of W-26Re thermocouple material, Pt thermocouple material and Ni-3Si thermocouple material.

In some of these embodiments, the thickness of the substrate is 300 μm-500 μm.

In some of these embodiments, the substrate is a silicon substrate, a silicon carbide substrate or a sapphire substrate.

In some of the embodiments, the distance between the first thermal node and the second thermal node is equal to the distance between the third thermal node and the fourth thermal node.

In some of the embodiments, the distance between the first thermal node and the third thermal node is equal to the distance between the second thermal node and the fourth thermal node.

In some of the embodiments, the array type thin film temperature difference sensor further includes a first guide wire, a second guide wire, a third guide wire and a fourth guide wire, and one end of the first guide wire is connected to At the first test end, one end of the second guide wire is connected to the second test end, one end of the third guide wire is connected to the third test end, and the fourth guide wire One end of the wire is connected to the fourth test terminal.

Another object of the present invention is to provide a preparation method of an array type thin film temperature difference sensor.

A preparation method of an array type thin film temperature difference sensor, comprising the following steps:

get the substrate;

A positive electrode pattern is formed on the substrate by a photolithography process;

A positive electrode sensitive layer is obtained by depositing the positive electrode pattern on the positive electrode pattern by DC magnetron sputtering technology;

A negative electrode pattern is formed on the substrate by a photolithography process;

A negative electrode sensitive layer is deposited on the negative electrode pattern by DC magnetron sputtering technology.

In some of the embodiments, the preparation method of the array type thin film temperature difference sensor further includes the following steps: after the substrate is obtained, the substrate is sequentially subjected to alcohol, acetone, alcohol ultrasonic cleaning treatment and drying treatment.

In some of the embodiments, when the positive electrode sensitive layer is deposited on the positive electrode pattern by using the DC magnetron sputtering technology, the vacuum of the magnetron sputtering reaches 2.8×10 ^-7 to 3.0×10 ^-7 Torr, and the flow of argon is controlled. The speed is 45～60sccm, and the sputtering power is 230～280W.

In some of the embodiments, when the negative electrode sensitive layer is deposited on the negative electrode pattern by using the DC magnetron sputtering technology, the vacuum of the magnetron sputtering reaches 2.8×10 ^-7 to 3.0×10 ^-7 Torr, and the flow of argon is controlled. The speed is 45～60sccm, and the sputtering power is 180～220W.

The above-mentioned array type thin film temperature difference sensor can judge whether the uniformity of the temperature of the acid-base pipeline meets the requirements, and the test reliability is high. The above-mentioned array thin film temperature difference sensor can measure the temperature difference between multiple thermal junctions by using the thermoelectric effect. The thermocouple metal material that has been developed in the field of temperature measurement is selected, and there is no need to perform a complex thermoelectric potential-temperature calibration process. The test time Short, greatly shortening its industrialization development time.

Description of drawings

In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative effort.

For a more complete understanding of the present application and its beneficial effects, the following description will be made with reference to the accompanying drawings. Here, the same reference numerals denote the same parts in the following description.

1 is a schematic diagram of an array type thin film temperature difference sensor according to an embodiment of the present invention;

Fig. 2 is the temperature distribution diagram of the COMSOL temperature model simulation measurement process of the array thin film temperature difference sensor described in Embodiment 1 of the present invention;

3 is a potential distribution diagram of the COMSOL temperature model simulation measurement process of the array thin film temperature difference sensor described in Embodiment 1 of the present invention;

4 is a temperature difference-potential curve diagram of each thermal junction in the COMSOL temperature model simulation measurement process of the array thin film temperature difference sensor according to Embodiment 1 of the present invention, wherein the abscissa is temperature and the ordinate is voltage.

Description of reference numerals

10. Array type thin film temperature difference sensor; 110, the first positive electrode; 111, the first test end; 120, the second positive electrode; 121, the second test end; 130, the third positive electrode; 131, the third test end; 140, the first Four positive electrodes; 141, the fourth test terminal; 210, the first negative electrode; 220, the second negative electrode; 230, the third negative electrode; 310, the first hot junction; 320, the second hot junction; 330, the third hot junction point; 340, the fourth hot node.

Detailed ways

In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " Back, Left, Right, Vertical, Horizontal, Top, Bottom, Inner, Outer, Clockwise, Counterclockwise, Axial , "radial", "circumferential" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the indicated device or Elements must have a particular orientation, be constructed and operate in a particular orientation and are therefore not to be construed as limitations of the invention.

In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature delimited with "first", "second" may expressly or implicitly include at least one of that feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise expressly and specifically defined.

In the present invention, unless otherwise expressly specified and limited, the terms "installed", "connected", "connected", "fixed" and other terms should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between the two elements, unless otherwise specified limit. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

In the present invention, unless otherwise expressly specified and limited, a first feature "on" or "under" a second feature may be in direct contact between the first and second features, or the first and second features indirectly through an intermediary touch. Also, the first feature being "above", "over" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.

It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or an intervening element may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for the purpose of illustration only and do not represent the only embodiment.

In the description of the present invention, the meaning of several means one or more, the meaning of multiple means two or more, greater than, less than, exceeding, etc. are understood as not including this number, above, below, within, etc. are understood as including this number. If it is described that the first and the second are only for the purpose of distinguishing technical features, it cannot be understood as indicating or implying relative importance, or indicating the number of the indicated technical features or the order of the indicated technical features. relation.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

The embodiment of the present application provides an array type thin film temperature difference sensor 10 to solve the problems of the traditional temperature sensor that can measure the temperature difference between acid and alkali pipelines. The following description will be made with reference to the accompanying drawings.

An example of the array type thin film temperature difference sensor 10 provided by the embodiment of the present application is shown in FIG. 1 , which is a schematic structural diagram of the array type thin film temperature difference sensor 10 provided by the embodiment of the present application. The array type thin film temperature difference sensor 10 of the present application can be used to measure the temperature difference in the area of the acid-base pipeline.

In order to illustrate the structure of the array type thin film temperature difference sensor 10 more clearly, the array type thin film temperature difference sensor 10 will be introduced below with reference to the accompanying drawings.

Illustratively, please refer to FIG. 1 , which is a schematic structural diagram of an array type thin film temperature difference sensor 10 provided in an embodiment of the present application. An array type thin film temperature difference sensor 10 includes a substrate, a positive electrode sensitive layer and a negative electrode sensitive layer. The substrate is not shown in FIG. 1 .

The positive sensitive layer and the negative sensitive layer are located on the substrate. The positive electrode sensitive layer includes a first positive electrode 110 , a second positive electrode 120 , a third positive electrode 130 and a fourth positive electrode 140 . The negative electrode sensitive layer includes a first negative electrode 210 , a second negative electrode 220 and a third negative electrode 230 .

Referring to FIG. 1 , one end of the first positive electrode 110 and one end of the first negative electrode 210 are connected through a first thermal junction 310 . One end of the second positive electrode 120 is connected to one end of the second negative electrode 220 through the second thermal junction 320 . The other end of the first negative electrode 210 and one end of the third negative electrode 230 are both connected to one end of the third positive electrode 130 through a third thermal junction 330 . The other end of the second negative electrode 220 and the other end of the third negative electrode 230 are both connected to one end of the fourth positive electrode 140 through a fourth thermal node 340 . The other end of the first positive electrode 110 and the other end of the third positive electrode 130 are disposed opposite to each other and form a first test end 111 and a third test end 131 respectively. The other end of the second positive electrode 120 and the other end of the fourth positive electrode 140 are disposed opposite to each other and form the second test end 121 and the fourth test end 141 respectively.

In some of the embodiments, the preparation material of the positive electrode sensitive layer is selected from one or more of W-5Re thermocouple material, Pt-10Rh thermocouple material, Pt-13Rh thermocouple material and Ni-10Cr thermocouple material. For example, in one specific example, the preparation material of the positive electrode sensitive layer is selected from W-5Re thermocouple material; in another specific example, the preparation material of the positive electrode sensitive layer is selected from Pt-10Rh thermocouple material; in another specific example In an example, the preparation material of the positive electrode sensitive layer is selected from Pt-13Rh thermocouple material; in another specific example, the preparation material of the positive electrode sensitive layer is selected from Ni-10Cr thermocouple material.

In some of the embodiments, the preparation material of the negative electrode sensitive layer is selected from one or more of W-26Re thermocouple material, Pt thermocouple material and Ni-3Si thermocouple material. For example, in one specific example, the preparation material of the negative electrode sensitive layer is selected from W-26Re thermocouple material; in another specific example, the preparation material of the negative electrode sensitive layer is selected from Pt thermocouple material; in another specific example , the preparation material of the negative sensitive layer is selected from Ni-3Si thermocouple material.

In some of these embodiments, the thickness of the substrate is 300 μm-500 μm. For example, in one specific example, the thickness of the substrate is 400 μm. It is not difficult to understand that in other embodiments, the thickness of the substrate may also be 300 μm, 320 μm, 330 μm, 350 μm, 380 μm, 410 μm, 430 μm, 450 μm, 480 μm, 490 μm or other values.

In some of these embodiments, the substrate is a silicon substrate, a silicon carbide substrate, or a sapphire substrate.

In some of the embodiments, please refer to FIG. 1 , the distance between the first thermal node 310 and the second thermal node 320 is equal to the distance between the third thermal node 330 and the fourth thermal node 340 .

In some of the embodiments, the distance between the first hot node 310 and the third hot node 330 is the same as the distance between the second hot node 320 and the fourth hot node 340 .

In some of the embodiments, as shown in FIG. 1 , the distance between the first test terminal 111 and the third test terminal 131 is smaller than the distance between the first hot node 310 and the second hot node 320 , the first The distance between the test terminal 111 and the third test terminal 131 is smaller than the distance between the third thermal junction 330 and the fourth thermal junction 340 .

In some of these embodiments, as shown in FIG. 1 , the distance between the second test terminal 121 and the fourth test terminal 141 is smaller than the distance between the first hot node 310 and the second hot node 320 , and the second The distance between the test terminal 121 and the fourth test terminal 141 is smaller than the distance between the third thermal junction 330 and the fourth thermal junction 340 .

In some of the embodiments, as shown in FIG. 1 , the distance between the first test end 111 and the third test end 131 is equal to the distance between the second test end 121 and the fourth test end 141 .

In some of the embodiments, as shown in FIG. 1 , the distance between the first test end 111 and the second test end 121 is equal to the distance between the third test end 131 and the fourth test end 141 . The distance between the first test end 111 and the second test end 121 is smaller than the distance between the first test end 111 and the third test end 131 . The first test terminal 111 and the third test terminal 131 are close to each other, and the second test terminal 121 and the fourth test terminal 141 are close to each other, so that the temperature between the corresponding test terminals is the same, and the corresponding conductive wires (such as copper wires) are connected. Conduct potential tests to meet the needs of judging the temperature uniformity of acid-base pipelines.

It should be noted that the temperature difference between the first hot junction 310 and the third hot junction 330 is tested between the first test terminal 111 and the second test terminal 121; the third test terminal 131 and the fourth test terminal The temperature difference between the second hot junction 320 and the fourth hot junction 340 is tested between the terminals 141 ; the third hot junction 330 and the fourth The temperature difference between the hot junctions 340 .

In some of the embodiments, the array type thin film temperature difference sensor 10 further includes a first guide wire, a second guide wire, a third guide wire and a fourth guide wire. One end of the first guide wire is connected to the first test terminal 111 . One end of the second guide wire is connected to the second test terminal 121 . One end of the third lead wire is connected to the third test terminal 131 . One end of the fourth guide wire is connected to the fourth test terminal 141 . The other end of the first guide wire, the other end of the second guide wire, the other end of the third guide wire and the other end of the fourth guide wire are connected to the voltmeter, and the temperature difference between the hot junction and the hot junction is the same as The sensitive potential values correspond one by one, which can achieve the purpose of testing the temperature difference.

In some of these embodiments, the first guide wire, the second guide wire, the third guide wire, and the fourth guide wire may be copper wires, respectively.

Another object of the present invention is to provide a manufacturing method of the array type thin film temperature difference sensor 10 .

A preparation method of an array type thin film temperature difference sensor 10, comprising the following steps:

Step 1. Obtain a substrate.

Step 2, using a photolithography process to form a positive electrode pattern on the substrate.

Step 3, using DC magnetron sputtering technology to deposit a film on the positive electrode pattern, and using acetone stripping solution to remove the photoresist and film outside the positive electrode pattern to obtain a positive electrode sensitive layer. The positive electrode sensitive layer includes a first positive electrode 110 , a second positive electrode 120 , a third positive electrode 130 and a fourth positive electrode 140 .

Step 4, using a photolithography process to form a negative electrode pattern on the substrate.

Step 5, using DC magnetron sputtering technology to deposit a film on the negative electrode pattern, and using acetone stripping solution to remove the photoresist and film outside the negative electrode pattern to obtain a negative electrode sensitive layer. The negative electrode sensitive layer includes a first negative electrode 210 , a second negative electrode 220 and a third negative electrode 230 .

Wherein, one end of the first positive electrode 110 is overlapped with one end of the first negative electrode 210 to form a first thermal junction 310 connection. One end of the second positive electrode 120 is overlapped with one end of the second negative electrode 220 to form a second hot junction 320 connection. The other end of the first negative electrode 210 and one end of the third negative electrode 230 are overlapped with one end of the third positive electrode 130 to form a third thermal junction 330 connection. The other end of the second negative electrode 220 and the other end of the third negative electrode 230 are overlapped with one end of the fourth positive electrode 140 to form a fourth thermal junction 340 connection. The other end of the first positive electrode 110 and the other end of the third positive electrode 130 are disposed opposite to each other and form a first test end 111 and a third test end 131 respectively. The other end of the second positive electrode 120 and the other end of the fourth positive electrode 140 are disposed opposite to each other and form the second test end 121 and the fourth test end 141 respectively.

In some of the embodiments, the preparation method of the array type thin film temperature difference sensor 10 further includes the following steps: after obtaining the substrate, the substrate is sequentially subjected to alcohol, acetone, and alcohol ultrasonic cleaning for 18-22 minutes and drying.

In some of the embodiments, when the positive electrode sensitive layer is deposited on the positive electrode pattern by DC magnetron sputtering technology, the vacuum of magnetron sputtering reaches 2.8×10 ^-7 to 3.0×10 ^-7 Torr, and the flow rate of argon gas is controlled to be 45～60sccm, sputtering power is 230～280W.

In some of the embodiments, when the negative electrode sensitive layer is deposited on the negative electrode pattern by using DC magnetron sputtering technology, the vacuum of magnetron sputtering reaches 2.8×10 ^-7 to 3.0×10 ^-7 Torr, and the flow rate of argon gas is controlled to be 45～60sccm, sputtering power is 180～220W.

In some of the embodiments, the manufacturing method of the array type thin film temperature difference sensor 10 further includes the following step: connecting the first guide wire to the first test end 111 . A second guide wire is connected to the second test terminal 121 . A third lead wire is connected to the third test terminal 131 . A fourth guide wire is connected to the fourth test terminal 141 .

The above-mentioned array type thin film temperature difference sensor 10 can judge whether the uniformity of the temperature of the acid-base pipeline meets the requirements, and the test reliability is high. The above-mentioned array type thin film temperature difference sensor 10 can use the thermoelectric effect to measure the temperature difference between multiple thermal junctions, and selects the thermocouple metal material that has been developed in the field of temperature measurement. The time is short, which greatly shortens the development time of its industrialization.

Example 1

This embodiment provides a preparation method of the array type thin film temperature difference sensor 10 .

The W-5Re thermocouple material is selected as the material of the positive electrode sensitive layer, and the W-26Re thermocouple material is selected as the material of the negative electrode sensitive layer.

A preparation method of an array type thin film temperature difference sensor 10 includes the following steps:

Step 1. Obtain a substrate, which is a 6-inch SiC substrate of 400 μm±40 μm. After the substrate is obtained, the substrate is sequentially subjected to alcohol, acetone, and alcohol ultrasonic cleaning treatment for 18min-22min, and then dried.

Step 2, using a photolithography process to form a positive electrode pattern on the substrate. Specifically, AZ5214 type photoresist was spin-coated on the substrate to form a first photoresist film layer with a thickness of 2.8 μm and then soft-baked. The layer is exposed to light, and then the substrate and the first photoresist film layer are put into the developing solution as a whole to dissolve the photoresist soluble area caused by the exposure, and a positive electrode pattern with a thickness of 400 nm is obtained.

Step 3. Select a W-5Re target with a purity of 99.99% and install it on the target gun of magnetron sputtering, use DC magnetron sputtering technology to deposit a film on the positive electrode pattern, and the vacuum of magnetron sputtering reaches 2.8×10 ^-7 Torr , the flow rate of argon gas was controlled to be 45sccm, and the sputtering power was 250W. Use acetone stripping solution to remove the photoresist and film outside the positive electrode pattern to obtain the positive electrode sensitive layer. The obtained positive electrode sensitive layer includes a first positive electrode 110 , a second positive electrode 120 , a third positive electrode 130 and a fourth positive electrode 140 .

Step 4, using a photolithography process to form a negative electrode pattern on the substrate. Specifically, AZ5214 type photoresist is spin-coated on the substrate to form a second photoresist film layer with a thickness of 2.8 μm and then soft-bake, and the second photoresist film is subjected to The layer is exposed to light, and then the substrate and the second photoresist film layer are put into the developing solution as a whole to dissolve the photoresist soluble area caused by the exposure, and the negative electrode pattern is obtained.

Step 5. Select W-26Re targets with a purity of 99.99% and install them on the target gun of magnetron sputtering. Use DC magnetron sputtering technology to deposit a film on the negative electrode pattern. The vacuum of magnetron sputtering reaches 2.8×10 ^{− 7} Torr, controlled argon flow rate of 45 sccm, and sputtering power of 200 W. Use acetone stripping solution to remove the photoresist and film outside the negative electrode pattern to obtain a negative electrode sensitive layer with a thickness of 400 nm. The obtained negative electrode sensitive layer includes a first negative electrode 210 , a second negative electrode 220 and a third negative electrode 230 .

Wherein, one end of the first positive electrode 110 is overlapped with one end of the first negative electrode 210 to form a first thermal junction 310 connection. One end of the second positive electrode 120 is overlapped with one end of the second negative electrode 220 to form a second hot junction 320 connection. The other end of the first negative electrode 210 and one end of the third negative electrode 230 are overlapped with one end of the third positive electrode 130 to form a third thermal junction 330 connection. The other end of the second negative electrode 220 and the other end of the third negative electrode 230 are overlapped with one end of the fourth positive electrode 140 to form a fourth thermal junction 340 connection. The other end of the first positive electrode 110 and the other end of the third positive electrode 130 are disposed opposite to each other and form a first test end 111 and a third test end 131 respectively. The other end of the second positive electrode 120 and the other end of the fourth positive electrode 140 are disposed opposite to each other and form the second test end 121 and the fourth test end 141 respectively.

Step 6. Connect the first guide wire to the first test terminal 111 . A second guide wire is connected to the second test terminal 121 . A third lead wire is connected to the third test terminal 131 . A fourth guide wire is connected to the fourth test terminal 141 .

The temperature distribution diagram of the COMSOL temperature model simulation measurement process of the array type thin film temperature difference sensor 10 obtained by the preparation method of the array type thin film temperature difference sensor 10 in this embodiment is shown in FIG. 2 ; the COMSOL temperature model of the array type thin film temperature difference sensor 10 simulates the measurement process. The potential distribution diagram is shown in Figure 3, and the COMSOL temperature model of the array thin film temperature difference sensor 10 simulates the measurement process of each thermal junction temperature difference-potential curve diagram shown in Figure 4. In Figure 4, the abscissa is the temperature, and the ordinate is the voltage.

In the above-mentioned embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above-described embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be regarded as the scope described in this specification.

The above-mentioned embodiments only represent several embodiments of the present invention, and the descriptions thereof are specific and detailed, but should not be construed as limiting the scope of the patent of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can also be made, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims (12)

1. An array type thin film temperature difference sensor is characterized by comprising a substrate, and a positive electrode sensitive layer and a negative electrode sensitive layer which are positioned on the substrate; the positive pole sensitive layer comprises a first positive pole, a second positive pole, a third positive pole and a fourth positive pole, the negative pole sensitive layer comprises a first negative pole, a second negative pole and a third negative pole, one end of the first positive pole is connected with one end of the first negative pole through a first hot junction, one end of the second positive pole is connected with one end of the second negative pole through a second hot junction, the other end of the first negative pole is connected with one end of the third negative pole through a third hot junction, the other end of the second negative pole is connected with the other end of the third negative pole through a fourth hot junction, the other end of the first positive pole is arranged opposite to the other end of the third positive pole and forms a first testing end and a third testing end respectively, and the other end of the second positive pole is arranged opposite to the other end of the fourth positive pole and forms a second testing end and a fourth testing end respectively.

2. The array type thin film temperature difference sensor according to claim 1, wherein the positive sensitive layer is made of one or more materials selected from the group consisting of W-5Re thermocouple materials, pt-10Rh thermocouple materials, pt-13Rh thermocouple materials and Ni-10Cr thermocouple materials.

3. The array type thin film temperature difference sensor according to claim 1, wherein the negative sensitive layer is made of one or more materials selected from a W-26Re thermocouple material, a Pt thermocouple material and a Ni-3Si thermocouple material.

4. The array thin film temperature difference sensor according to any one of claims 1 to 3, wherein the substrate has a thickness of 300 μm to 500 μm.

5. The array thin film temperature difference sensor according to any one of claims 1 to 3, wherein the substrate is a silicon substrate, a silicon carbide substrate or a sapphire substrate.

6. The array type thin film temperature difference sensor according to any one of claims 1 to 3, wherein a distance between the first hot junction and the second hot junction is equal to a distance between the third hot junction and the fourth hot junction.

7. The array type thin film temperature difference sensor according to any one of claims 1 to 3, wherein a distance between the first hot junction and the third hot junction is equal to a distance between the second hot junction and the fourth hot junction.

8. The array type thin film temperature difference sensor according to any one of claims 1 to 3, further comprising a first lead wire, a second lead wire, a third lead wire and a fourth lead wire, wherein one end of the first lead wire is connected to the first test end, one end of the second lead wire is connected to the second test end, one end of the third lead wire is connected to the third test end, and one end of the fourth lead wire is connected to the fourth test end.

9. The method for preparing an array-type thin film temperature difference sensor according to any one of claims 1 to 8, comprising the steps of:

obtaining a substrate;

forming a positive electrode pattern on the substrate by adopting a photoetching process;

depositing on the positive electrode pattern by adopting a direct-current magnetron sputtering technology to obtain a positive electrode sensitive layer;

forming a negative electrode pattern on the substrate by adopting a photoetching process;

and depositing on the negative electrode pattern by adopting a direct-current magnetron sputtering technology to obtain a negative electrode sensitive layer.

10. The method for preparing an array type thin film temperature difference sensor according to claim 9, further comprising the steps of: after the substrate is obtained, the substrate is subjected to ultrasonic cleaning treatment by alcohol, acetone and alcohol and drying treatment in sequence.

11. The method for preparing the array type thin film temperature difference sensor according to claim 9 or 10, wherein when a positive electrode sensitive layer is obtained by depositing the positive electrode pattern by using a direct current magnetron sputtering technology, the vacuum of magnetron sputtering reaches 2.8 x 10 ^-7 ～3.0×10 ^-7 Torr, controlling the flow rate of argon gas to be 45-60 sccm, and sputtering power to be230～280W。

12. The method for preparing array type thin film temperature difference sensors according to claim 9 or 10, wherein when a negative electrode sensitive layer is obtained by depositing on the negative electrode pattern by using a direct current magnetron sputtering technology, the vacuum of magnetron sputtering reaches 2.8 x 10 ^-7 ～3.0×10 ^-7 The Torr, the flow rate of argon gas is controlled to be 45-60 sccm, and the sputtering power is controlled to be 180-220W.

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