CN115184376B - Wafer detection method and device - Google Patents
Wafer detection method and device Download PDFInfo
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- CN115184376B CN115184376B CN202210910674.XA CN202210910674A CN115184376B CN 115184376 B CN115184376 B CN 115184376B CN 202210910674 A CN202210910674 A CN 202210910674A CN 115184376 B CN115184376 B CN 115184376B
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
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Abstract
The application discloses a wafer detection method and a device, wherein the detection method comprises the following steps: a front detection step of controlling the first light source group and the second light source group to selectively emit light respectively to generate first combined light, and controlling the first lens group to acquire a front detection image of the wafer to be detected under the irradiation of the first combined light; a back detection step of controlling the second light source group and the second light source group to selectively emit light respectively to generate second combined light and controlling the second lens group to acquire a back detection image of the wafer to be detected under the irradiation of the second combined light; a surface defect acquisition step of acquiring a surface defect of the wafer to be detected according to the front detection image and the back detection image; in the front detection step, the second light source group is a backlight source; in the back detection step, the first light source group is a backlight source. The first light source group and the second light source group are matched for use, a backlight source is not required to be arranged on the first detection module and the second detection module, the detection efficiency is improved, the number of accessories is reduced, and the detection cost is saved.
Description
Technical Field
The application belongs to the technical field of wafer detection, and particularly relates to a wafer detection method and device.
Background
The starting material of the wafer is typically silicon, and high purity polysilicon is dissolved and then doped with silicon crystal seeds, which are then slowly pulled to form a silicon ingot. The silicon ingot is ground, polished and sliced to form a silicon wafer, i.e., a wafer. In the wafer manufacturing process, a series of processes such as pulling up a single crystal, slicing, lapping, polishing, layering, photolithography, doping, heat treatment, dicing and the like may cause defects on the wafer surface. In order to prevent the wafer with surface defects or the core particles on the wafer from flowing into the packaging process, the optical detection equipment is used for identifying the surface defects of the wafer and classifying and marking the wafer, so that the wafer sorting is assisted.
In the related art, the wafer detection method can only detect one side of the wafer, and cannot simultaneously detect both sides of the wafer, so that the detection efficiency of the surface defects of the wafer is low and the cost is high.
Disclosure of Invention
The application aims to at least solve the technical problems that the wafer detection method in the related art can only detect one side of a wafer, can not realize the double-side detection of the wafer at the same time, and has lower detection efficiency and high cost. To this end, the application provides a wafer inspection method and apparatus.
The wafer detection method provided by the embodiment of the application adopts the wafer detection device to detect the wafer to be detected, and the wafer detection device comprises the following steps:
A detection rack;
The wafer carrying platform is arranged on the detection rack and is of a transparent structure;
the first detection module comprises a first lens group and a first light source group, is arranged on the detection rack and is positioned above the wafer carrier;
the second detection module comprises a second lens group and a second light source group, is arranged on the detection rack and is positioned above the wafer carrier;
The wafer detection method comprises the following steps:
A front detection step, namely controlling the first light source group and the second light source group to selectively emit light respectively to generate first combined light, and controlling the first lens group to acquire a front detection image of a wafer to be detected under the irradiation of the first combined light;
a back detection step of controlling the second light source group and the second light source group to selectively emit light respectively to generate second combined light, and controlling the second lens group to acquire a back detection image of the wafer to be detected under the irradiation of the second combined light;
A surface defect acquisition step of acquiring surface defects of the wafer to be detected according to the front detection image and the back detection image;
In the front detection step, the second light source group is a backlight source; in the back surface detection step, the first light source group is a back light source.
In some embodiments, when the wafer to be detected is initially detected in batch, in the front surface detection step, controlling a first combined light generated by selectively emitting light from the first light source group and the second light source group respectively to include a combination of all different light sources;
In the back detection step, the second light source group and the first light source group are controlled to selectively emit the second combined light respectively, and the second combined light comprises the combined situation of all different light sources.
In some embodiments, when the wafer to be inspected is a lot-first inspection, in the surface defect acquiring step, the method further includes the steps of:
and acquiring the corresponding first combined light batch initial detection combination mode and the corresponding second combined light batch initial detection combination mode according to the surface defects of the wafer to be detected.
In some embodiments, in the front surface detection step, the first light source group and the second light source group are controlled to selectively emit light respectively to generate the first combined light batch initial detection combination mode;
In the back detection step, the second light source group and the first light source group are controlled to selectively emit light respectively to generate a batch initial detection combination mode of second combined light. The embodiment of the application also provides a wafer detection device adopted by the wafer detection method, and the wafer detection device comprises:
A detection rack;
The wafer carrying platform is arranged on the detection rack and is of a transparent structure;
the first detection module comprises a first lens group and a first light source group, is arranged on the detection rack and is positioned above the wafer carrier;
The second detection module comprises a second lens group and a second light source group, and is arranged on the detection rack and positioned above the wafer carrier.
In some embodiments, the first light source group includes a first bright field light source and a first dark field light source, the first bright field light generated by the first bright field light source is coaxial with the first lens group, and the first dark field light generated by the first dark field light source is obliquely directed to the wafer carrier;
The second light source group comprises a second bright field light source and a second dark field light source, second bright field light generated by the second bright field light source is coaxial with the second lens group, and second dark field light generated by the second dark field light source obliquely irradiates the wafer carrier.
In some embodiments, the first dark field light generated by the first dark field light source is any one of a ring, a rectangle, and a polygon; and the second dark field light generated by the second dark field light source is any one of a ring shape, a rectangle shape and a polygon shape.
In some embodiments, the first dark field light generated by the first dark field light source is concentric ring shaped; and the second dark field light generated by the second dark field light source is in a concentric ring shape.
In some embodiments, the first dark field light generated by the first dark field light source comprises a first dark field high ambient light, a first dark field ambient light, and a first dark field low ambient light;
The second dark field light generated by the second dark field light source comprises a second dark field Gao Huanguang, second dark field ambient light and second dark field low ambient light.
In some embodiments, the first bright field light source comprises a first bright field red light source, a first bright field blue light source, and a first bright field green light source; the first dark field light source comprises a first dark field red light source, a first dark field blue light source and a first dark field green light source;
The second bright field light source comprises a second bright field red light source, a second bright field blue light source and a second bright field green light source; the second dark field light source comprises a second dark field red light source, a second dark field blue light source and a second dark field green light source.
The embodiment of the application has at least the following beneficial effects:
According to the wafer detection method, the first light source group of the first detection module can provide main light for front detection of the wafer to be detected and backlight for back detection of the wafer to be detected, so that the first light source group has two functions of providing main light and backlight; similarly, the second light source group of the second detection module can provide main light for back detection of the wafer to be detected and backlight for front detection of the wafer to be detected, so that the second light source group has two functions of providing main light and backlight. Through the cooperation of first light source group and second light source group, need not to set up the backlight to first detection module and second detection module respectively alone, improved wafer detection efficiency promptly, reduced wafer detection device's accessory quantity again, saved wafer detection device's manufacturing cost.
According to the wafer detection device, the first detection module is arranged above the wafer carrying table, the second detection module is arranged below the wafer carrying table, the front surface and the back surface of the wafer to be detected can be detected through the cooperation of the first detection module and the second detection module, when the surface defect of the wafer to be detected is detected, the surface defect detection of the front surface and the back surface can be carried out without transferring and overturning the wafer to be detected, the detection time of the wafer to be detected can be shortened, and the detection efficiency is improved.
Further, in the wafer inspection device, the first light source group of the first inspection module may provide main light for front inspection of the wafer to be inspected, and may provide backlight for back inspection of the wafer to be inspected, so that the first light source group has two functions of providing main light and backlight; similarly, the second light source group of the second detection module can provide main light for back detection of the wafer to be detected and backlight for front detection of the wafer to be detected, so that the second light source group has two functions of providing main light and backlight. Through the cooperation of first light source group and second light source group, need not to set up the backlight to first detection module and second detection module respectively alone, reduced wafer detection device's accessory quantity, saved wafer detection device's manufacturing cost.
Further, the first lens group of the first detection module and the second lens group of the second detection module are concentrically detected, so that the situation that the front detection image and the back detection image are not corresponding or are not corresponding in a wrong way when being combined can be avoided, and the detection positions of the wafers are the same, and the corresponding core particles are the same.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic perspective view of a wafer inspection apparatus according to an embodiment of the present application;
fig. 2 shows a front view of the wafer inspection apparatus of fig. 1;
FIG. 3 shows a top view of the wafer inspection apparatus of FIG. 1;
FIG. 4 shows a left side view of the wafer inspection apparatus of FIG. 1;
Fig. 5 is a schematic diagram showing the optical path structure of the wafer inspection apparatus of fig. 1;
Fig. 6 shows a schematic diagram of the light source structure of the first dark field light source of the wafer inspection apparatus of fig. 5.
Reference numerals:
100. A detection rack; 200. a wafer carrier; 210. a wafer fixing device; 300. a first detection module; 310. a first lens group; 320. a first light source group; 321. a first bright field light source; 322. a first dark field light source; 3221. a first dark field high ambient light; 3222. the first dark field is glowed; 3223. a first dark field low ambient light; 400. a second detection module; 410. a second lens group; 420. a second light source group; 421. a second bright field light source; 422. a second dark field light source.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
The application is described below with reference to specific embodiments in conjunction with the accompanying drawings:
The wafer detection method according to an embodiment of the present application detects a wafer to be detected by using a wafer detection device, the wafer detection device includes:
A detection rack 100;
the wafer carrier 200 is arranged on the detection frame 100, and the wafer carrier 200 is of a transparent structure;
The first detection module 300 includes a first lens group 310 and a first light source group 320, which are disposed on the detection frame 100 and above the wafer carrier 200;
The second detection module 400 includes a second lens group 410 and a second light source group 420, which are disposed on the detection frame 100 and above the wafer carrier 200;
The wafer detection method comprises the following steps:
A front detection step, controlling the first light source group 320 and the second light source group 420 to selectively emit light respectively to generate first combined light, and controlling the first lens group 310 to obtain a front detection image of the wafer to be detected under the irradiation of the first combined light;
A back detection step, controlling the second light source group 420 and the second light source group 420 to selectively emit light respectively to generate second combined light, and controlling the second lens group 410 to obtain a back detection image of the wafer to be detected under the irradiation of the second combined light;
A surface defect acquisition step of acquiring surface defects of the wafer to be detected according to the front detection image and the back detection image;
in the front surface detection step, the second light source group 420 is a backlight source; in the back surface detection step, the first light source group 320 is a backlight source.
In the above wafer inspection method, the first light source group 320 of the first inspection module 300 may provide main light for front inspection of the wafer to be inspected, and may provide backlight for back inspection of the wafer to be inspected, so that the first light source group 320 has two functions of providing main light and backlight; similarly, the second light source group 420 of the second detection module 400 can provide main light for the back detection of the wafer to be detected, and can provide backlight for the front detection of the wafer to be detected, so that the second light source group 420 has two functions of providing main light and backlight. Through the cooperation of the first light source group 320 and the second light source group 420, the first detection module 300 and the second detection module 400 do not need to be respectively and independently provided with backlight sources, so that the wafer detection efficiency is improved, the number of accessories of the wafer detection device is reduced, and the production cost of the wafer detection device is saved.
In the wafer inspection method of the present embodiment, the front inspection step and the back inspection step may be performed sequentially, or the front inspection step may be performed first, and then the back inspection step may be performed; the back detection step may be performed first, and then the front detection step may be performed; in addition, the front side detection step and the back side detection step may be performed simultaneously.
In the front surface detection step of the wafer detection method of the present embodiment, the first light source group 320 and the second light source group 420 selectively emit light to generate the first combined light, for example, the first light source group 320 and the second light source group 420 may generate blue light, red light, green light, and the like simultaneously and sequentially; as another example, the first light source group 320 and the second light source group 420 may sequentially generate blue light and red light, blue light and green light, red light and green light, and the like at the same time; for another example, the first light source group 320 sequentially generates blue light, red light, green light, etc., while the second light source group 420 sequentially generates red light, green light, blue light, etc. I.e. the first light source group and the second light source group may be exhaustive of all different combinations. In the back detection step, the second combined light generated by the selective light emission of the second light source group 420 and the first light source group 320 is the same as that of the front detection step, and will not be described herein.
Based on the same inventive concept, a second aspect of the present application also provides a wafer inspection apparatus, including:
A detection rack 100;
A wafer carrier 200 disposed on the inspection rack 100, wherein the wafer carrier 200 has a transparent structure;
The first detection module 300 includes a first lens group 310 and a first light source group 320, which are disposed on the detection frame 100 and above the wafer carrier 200;
the second detection module 400, including a second lens group 410 and a second light source group 420, is disposed on the detection frame 100 and above the wafer carrier 200.
In the wafer inspection device, the first inspection module 300 is disposed above the wafer carrier 200, the second inspection module 400 is disposed below the wafer carrier 200, and the front and back surfaces of the wafer to be inspected can be inspected by matching the first inspection module 300 with the second inspection module 400, so that the front and back surfaces of the wafer to be inspected can be inspected without transferring and turning the wafer to be inspected when the surface defects of the wafer to be inspected are inspected, thereby shortening the inspection time of the wafer to be inspected and improving the inspection efficiency.
Further, in the above wafer inspection apparatus, the first light source group 320 of the first inspection module 300 may provide main light for front inspection of the wafer to be inspected, and may provide backlight for back inspection of the wafer to be inspected, so that the first light source group 320 has two functions of providing main light and backlight; similarly, the second light source group 420 of the second detection module 400 can provide main light for the back detection of the wafer to be detected, and can provide backlight for the front detection of the wafer to be detected, so that the second light source group 420 has two functions of providing main light and backlight. Through the cooperation of the first light source group 320 and the second light source group 420, the backlight sources do not need to be respectively and independently arranged on the first detection module 300 and the second detection module 400, the number of accessories of the wafer detection device is reduced, and the production cost of the wafer detection device is saved.
In this embodiment, the inspection rack 100 is used to carry functional components of the wafer inspection apparatus, and the structure of the inspection rack 100 is adaptively adjusted according to the setting positions and functions of the functional components of the wafer inspection apparatus.
In the inspection process of the wafer inspection apparatus of this embodiment, the robot transfers the wafer to be inspected onto the wafer stage 200, and fixes the wafer by the wafer fixing device 210 disposed on the wafer stage 200. The first lens group 310 and the first light source group 320 are positioned above the wafer to be detected, and the first lens group 310 is aligned to the front surface of the wafer to be detected; the second lens group 410 and the second light source group 420 are positioned below the wafer to be inspected and the second lens group 410 is aligned with the back surface of the wafer to be inspected. The first light source group 320 and the second light source group 420 provide illumination for the wafer to be inspected from the front and the back of the wafer to be inspected, and the first lens group 310 and the second lens group 410 perform photographing inspection for the wafer to be inspected.
As an alternative implementation manner, in the wafer inspection apparatus of this embodiment, the first light source group 320 includes a first bright field light source 321 and a first dark field light source 322, the first bright field light generated by the first bright field light source 321 is coaxial with the first lens group 310, and the first dark field light generated by the first dark field light source 322 is obliquely directed to the wafer carrier 200; the second light source group 420 includes a second bright field light source 421 and a second dark field light source 422, and the second bright field light generated by the second bright field light source 421 is coaxial with the second lens group 410, and the second dark field light generated by the second dark field light source 422 is obliquely directed to the wafer stage 200.
When the wafer inspection device of the present embodiment inspects a wafer to be inspected, the first dark field light source 322 and the first bright field light source 321 can shine the wafer to be inspected when the first lens group 310 performs front inspection on the wafer to be inspected, so that the first lens group 310 can better inspect the wafer to be inspected, and meanwhile, the second bright field light source 421 and/or the second dark field light source 422 can lift the wafer to be inspected to the backlight effect, so that the first lens group 310 can better perform front inspection on the wafer to be inspected. In the same way, the second dark field light source 422 and the second dark field light source 422 can shine the wafer to be detected when the second lens group 410 detects the back of the wafer to be detected, so that the second lens group 410 can better detect the wafer to be detected, and meanwhile, the first bright field light source 321 and/or the first dark field light source 322 can lift the wafer to be detected to a backlight effect, so that the second lens group 410 can further better detect the back of the wafer to be detected.
In order to improve the detection accuracy and detection rate of the surface defects, the first light source group 320 and the second light source group 420 are formed in different combinations to form different combined lights, and the wafer to be detected is detected in different polishing modes and different surface defects are distinguished.
In the present embodiment, the first bright field light formed by the first bright field light source 321 is coaxial with the first lens group 310, and the second bright field light formed by the second bright field light source 421 is coaxial with the second lens group 410; the first dark field light formed by the first dark field light source 322 has a certain angle with the first lens group 310, and the second dark field light formed by the second dark field light source 422 has a certain angle with the second lens group 410. So that different combined illumination forms can be formed by the first bright field light source 321, the second bright field light source 421, the first dark field light source 322, and the second dark field light source 422. In the wafer detection process, the surface defects and the types of the wafer can be accurately judged according to the images under different illumination channels and the images under different illumination channel combinations.
As shown in fig. 1 and 5, in order to make the first bright field light formed by the first bright field light source 321 coaxial with the first lens group 310, a first mirror may be provided in the first lens group 310, and the first bright field light is reflected by the first mirror to adjust the direction of the first bright field light so as to make it coaxial with the first lens group 310 in the light emitting direction; the second bright field light source 421 is disposed on the same principle as the first bright field light source 321, and will not be described herein.
As shown in fig. 1 and fig. 5, in order to make the first dark field light formed by the first dark field light source 322 have a certain included angle with the first lens group 310, the first dark field light source 322 may be disposed on the first lens group 310 through a fixed bracket lamp structure, and a certain included angle is formed between the first dark field light and the first lens group 310 by adjusting the light emitting angle of the first dark field light. Meanwhile, since the first dark field light source 322 is disposed on the first lens group 310, when the wafer moves in the detection process, the first dark field light source 322 and the first lens group 310 move synchronously with the wafer, and the included angle between the first dark field light and the first lens group 310 is not affected in the wafer moving process. The second dark field light source 422 is disposed in the same manner as the first dark field light source 322, and will not be described herein.
As an alternative implementation manner, the first dark field light generated by the first dark field light source 322 in this embodiment is any one of a ring, a rectangle, and a polygon; the second dark field light generated by the second dark field light source 422 is any one of a ring, a rectangle, and a polygon. In this embodiment, the first dark field light source 322 and the second dark field light source 422 are respectively inclined at different angles to the wafer to be inspected, and the wafer to be inspected is irradiated with light at different illumination angles, so that the detection rate of different defects can be improved.
As an alternative implementation manner, as shown in fig. 5 and 6, the first dark field light generated by the first dark field light source 322 of the present embodiment is concentric ring; the second dark field light generated by the second dark field light source 422 is concentric. Further preferably, as shown in fig. 6, the first dark field light generated by the first dark field light source 322 in the present embodiment includes a first dark field high ambient light 3221, a first dark field ambient light 3222, and a first dark field low ambient light 3223; correspondingly, the second dark field light generated by the second dark field light source 422 includes a second dark field Gao Huanguang, a second dark field ambient light, and a second dark field low ambient light. In this embodiment, the first dark field high ambient light 3221, the first dark field ambient light 3222, and the first dark field low ambient light 3223 may be turned on simultaneously, or may be turned on at any one or two of them; accordingly, the second dark field Gao Huanguang, the second dark field ambient light, and the second dark field low ambient light may be illuminated simultaneously, or any one or both may be illuminated, to form more, different combined illumination forms.
Table 1 correspondence table of surface defects and light source types
As shown in table 1, since different surface defects are different under different light sources, in this embodiment, the first dark field light and the second dark field light with concentric rings can make the illumination angle of the wafer to be detected more varied, i.e. provide more light source types for the wafer to be detected, so that more wafer surface defects can be captured and detected by the first lens group 310 and the second lens group 410 in the detection process.
As an alternative implementation manner, in this embodiment, the first bright field light source 321 includes a first bright field red light source, a first bright field blue light source, and a first bright field green light source; the first dark field light source 322 includes a first dark field red light source, a first dark field blue light source, and a first dark field green light source; accordingly, the second bright field light source 421 includes a second bright field red light source, a second bright field blue light source, and a second bright field green light source; the second dark field light source 422 includes a second dark field red light source, a second dark field blue light source, and a second dark field green light source.
Since different surface defects are different under different light sources, in the present embodiment, by combining light sources with different colors, a plurality of types of polishing forms for wafers can be formed, and the number of the light sources is increased or decreased, so that more surface defects of the wafers can be photographed and detected by the first lens group 310 and the second lens group 410 in the detection process.
In the above examples of the present application, any of the above embodiments may be adopted, or any two or more of the above embodiments may be combined without contradiction to obtain a richer light source form.
In the wafer inspection method of the present embodiment, the first light source group 320 and the second light source group 420 are controlled to selectively emit light respectively to generate a first combined light. It means that the first light source group 320 and the second light source group 420 are controlled to emit light simultaneously, and the first dark field light source 322 and the first bright field light source 321 of the first light source group 320 are controlled to emit light alternatively or simultaneously. The first bright field light source 321 can alternatively emit blue light, red light or green light, or can emit any two or three of the light sources simultaneously; the second bright field light source 421 is similar to the first bright field light source 321, and will not be described herein. Meanwhile, the first acne light source can alternatively emit first dark field high-ring light 3221, first dark field medium-ring light 3222 and first dark field low-ring light 3223, and also can emit any two or three kinds of color light, and further, the first dark field high-ring light 3221 can be any one or more of blue light, red light or green light; the second dark field light source 422 is similar to the first dark field light source and will not be described again.
As an optional implementation manner, in the wafer inspection method of the present embodiment, when the wafer to be inspected is a lot-first inspection, in the front inspection step, the first combined light generated by selectively emitting light from the first light source group 320 and the second light source group 420 respectively includes the combined situation of all the different light sources;
in the back detection step, the second light source group 420 and the first light source group 320 are controlled to selectively emit the second combined light respectively, which includes the combination of all the different light sources.
In this embodiment, when the wafer to be detected is a lot-first detection, the surface defect type and the surface defect number of the wafer to be detected cannot be estimated before the detection, in which case, the first combined light generated by controlling the first light source group 320 and the second light source group 420 to selectively emit light respectively includes the combined situation of all the different light sources, so that in the front detection step, all the surface defect types under all the combined situations of the different light sources are detected as much as possible by adopting the combined situation of all the different light sources of the first light source group 320 and the second light source group 420; similarly, the second combined light generated by controlling the second light source group 420 and the first light source group 320 to selectively emit light respectively includes the combined situation of all the different light sources, so that in the back detection step, all the surface defect types in all the combined situations of the different light sources are detected as far as possible by adopting the combined situation of all the different light sources of the second light source group 420 and the first light source group 320.
Further, when the wafer to be inspected is a lot-first inspection, in the surface defect obtaining step, the method further includes the following steps:
and acquiring the corresponding first combined light batch initial detection combination mode and the corresponding second combined light batch initial detection combination mode according to the surface defects of the wafer to be detected.
In this embodiment, according to the surface defect of the wafer to be detected, the corresponding first combined light batch initial detection combination mode and the second combined light batch initial detection combination mode are obtained, so that the detection result of the batch of wafers to be detected in initial detection can be used for reference in the next detection process of the batch of wafers to be detected, the next wafers to be detected in the same batch can be detected in a targeted manner, the detection time can be shortened, and the detection efficiency can be improved.
Further, when the wafer to be inspected is non-batch primary inspection, in the front inspection step, the first light source group 320 and the second light source group 420 are controlled to selectively emit light respectively to generate the first combined light batch primary inspection combination mode;
In the back surface detection step, the second light source group 420 and the first light source group 320 are controlled to selectively emit light to generate a batch primary detection combination mode of the second combined light. The wafer to be detected is generally produced and inspected in batches, and the application finds that the surface defects of the wafers in the same batch are similar through research, so the application creatively proposes to adopt an associated detection method for the wafers to be detected in the same batch, when the wafer to be inspected in the same batch is initially inspected, the first combined light generated by controlling the first light source group 320 and the second light source group 420 to selectively emit light includes the combined condition of all the different light sources, so that the surface defect inspection can be more comprehensively performed on the wafer to be inspected. When the wafers to be detected in the same batch are detected, the light source combination condition of the first combined light corresponding to the detected surface defects can be selected for detection according to the initial detection result of the wafers to be detected in the same batch, and detection is not needed in a mode of adopting all different light source combinations, so that the surface defects of the wafers to be detected can be detected fully, the detection time can be shortened, and the detection efficiency is improved.
In this embodiment, when the wafer to be detected is initially detected in a batch, the wafer to be detected does not only refer to the first wafer to be detected in the same batch, but may also refer to a plurality of first wafers to be detected in the same batch.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" indicate orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
It should be noted that all the directional indicators in the embodiments of the present application are only used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture, and if the specific posture is changed, the directional indicators are correspondingly changed.
In the present application, unless specifically stated and limited otherwise, the terms "connected," "affixed," and the like are to be construed broadly, and for example, "affixed" may be a fixed connection, a removable connection, or an integral body; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present application.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the application, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. The wafer detection method is characterized in that a wafer detection device is adopted to detect a wafer to be detected, and the wafer detection device comprises:
A detection rack;
The wafer carrying platform is arranged on the detection rack and is of a transparent structure;
the first detection module comprises a first lens group and a first light source group, is arranged on the detection rack and is positioned above the wafer carrier;
the second detection module comprises a second lens group and a second light source group, is arranged on the detection rack and is positioned above the wafer carrier;
The wafer detection method comprises the following steps:
A front detection step, namely controlling the first light source group and the second light source group to selectively emit light respectively to generate first combined light, and controlling the first lens group to acquire a front detection image of a wafer to be detected under the irradiation of the first combined light;
a back detection step of controlling the second light source group and the second light source group to selectively emit light respectively to generate second combined light, and controlling the second lens group to acquire a back detection image of the wafer to be detected under the irradiation of the second combined light;
A surface defect acquisition step of acquiring surface defects of the wafer to be detected according to the front detection image and the back detection image;
In the front detection step, the second light source group is a backlight source; in the back surface detection step, the first light source group is a back light source.
2. The wafer inspection method according to claim 1, wherein when the wafer to be inspected is a lot-initial inspection, in the front inspection step, controlling the first light source group and the second light source group to selectively emit first combined light generated by respectively emitting light including a combination of all different light sources;
In the back detection step, the second light source group and the first light source group are controlled to selectively emit the second combined light respectively, and the second combined light comprises the combined situation of all different light sources.
3. The wafer inspection method according to claim 2, wherein when the wafer to be inspected is a lot-first inspection, the surface defect acquiring step further comprises the steps of:
And acquiring a corresponding first combined light batch initial detection combination mode and a corresponding second combined light batch initial detection combination mode according to the surface defects of the wafer to be detected.
4. The method of claim 3, wherein when the wafer to be inspected is a non-lot first inspection,
In the front detection step, the first light source group and the second light source group are controlled to emit light selectively to generate the first combined light batch initial detection combination mode;
in the back detection step, the second light source group and the first light source group are controlled to selectively emit light respectively to generate the first detection combination mode of the second combined light batch.
5. A wafer inspection apparatus employed in the wafer inspection method according to any one of claims 1 to 4, wherein the wafer inspection apparatus comprises:
A detection rack;
The wafer carrying platform is arranged on the detection rack and is of a transparent structure;
the first detection module comprises a first lens group and a first light source group, is arranged on the detection rack and is positioned above the wafer carrier;
the second detection module comprises a second lens group and a second light source group, is arranged on the detection rack and is positioned above the wafer carrier;
The first light source group comprises a first bright field light source and a first dark field light source, first bright field light generated by the first bright field light source is coaxial with the first lens group, and first dark field light generated by the first dark field light source is obliquely emitted to the wafer carrier;
the second light source group comprises a second bright field light source and a second dark field light source, second bright field light generated by the second bright field light source is coaxial with the second lens group, and second dark field light generated by the second dark field light source is obliquely emitted to the wafer carrier;
The first dark field light generated by the first dark field light source is any one of a ring shape, a rectangle and a polygon; and the second dark field light generated by the second dark field light source is any one of a ring shape, a rectangle shape and a polygon shape.
6. The wafer inspection apparatus according to claim 5, wherein the first dark field light generated by the first dark field light source is concentric ring shaped; and the second dark field light generated by the second dark field light source is in a concentric ring shape.
7. The wafer inspection apparatus of claim 6, wherein the first dark field light generated by the first dark field light source comprises a first dark field high ambient light, a first dark field ambient light, and a first dark field low ambient light;
The second dark field light generated by the second dark field light source comprises a second dark field Gao Huanguang, second dark field ambient light and second dark field low ambient light.
8. The wafer inspection apparatus of any one of claims 5 to 7, wherein the first bright field light source comprises a first bright field red light source, a first bright field blue light source, and a first bright field green light source; the first dark field light source comprises a first dark field red light source, a first dark field blue light source and a first dark field green light source;
The second bright field light source comprises a second bright field red light source, a second bright field blue light source and a second bright field green light source; the second dark field light source comprises a second dark field red light source, a second dark field blue light source and a second dark field green light source.
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| CN111982931A (en) * | 2020-08-27 | 2020-11-24 | 惠州高视科技有限公司 | High-precision wafer surface defect detection device and detection method thereof |
| CN112255245A (en) * | 2020-12-21 | 2021-01-22 | 惠州高视科技有限公司 | Method and device for detecting appearance defects of front and back surfaces of Mini LED wafer |
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| KR20220063526A (en) * | 2020-11-10 | 2022-05-17 | 엘지전자 주식회사 | Wafer inspection system |
| CN113670935A (en) * | 2021-08-25 | 2021-11-19 | 武汉中导光电设备有限公司 | Semiconductor wafer defect detection equipment and detection method |
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| CN112255245A (en) * | 2020-12-21 | 2021-01-22 | 惠州高视科技有限公司 | Method and device for detecting appearance defects of front and back surfaces of Mini LED wafer |
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