CN115180590B - Wafer bonding method - Google Patents
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- CN115180590B CN115180590B CN202210617812.5A CN202210617812A CN115180590B CN 115180590 B CN115180590 B CN 115180590B CN 202210617812 A CN202210617812 A CN 202210617812A CN 115180590 B CN115180590 B CN 115180590B
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 235000012431 wafers Nutrition 0.000 claims abstract description 167
- 239000002245 particle Substances 0.000 claims abstract description 44
- 239000000853 adhesive Substances 0.000 claims abstract description 26
- 230000001070 adhesive effect Effects 0.000 claims abstract description 25
- 238000005507 spraying Methods 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 abstract description 6
- 238000000137 annealing Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention discloses a bonding method of wafers, which is characterized in that adhesive containing conductive particles is sprayed on the end face of an electrode of a first wafer, and then the first wafer and a second wafer are bonded and fastened, so that the bonding surface of a device on the wafer can be electrically conducted through the conductive particles after the first wafer and the second wafer are bonded and fastened, compared with silicon-silicon bonding and eutectic bonding, the whole process is simpler and faster, the whole bonding process does not need polishing treatment of the wafer, and high-temperature annealing treatment is also not needed in the bonding process, thereby improving the process quality of wafer bonding.
Description
Technical Field
The application relates to the technical field of wafer bonding, in particular to a wafer bonding method.
Background
The technology of bonding the polycrystalline circle is taken as a new technological method, and can organically combine surface silicon processing and bulk silicon processing together, thereby becoming a research hot spot of MEMS (Micro-Electro-MECHANICAL SYSTEMS, micro-Electro-mechanical system) processing technology. The permanent bonding technology is used as a novel semiconductor manufacturing technology, has wide application prospect in material preparation device integration and product packaging, and therefore, a plurality of research institutions and production units at home and abroad have conducted intensive research on the bonding technology. The main current bonding process is divided into two types according to different technological principles: silicon-silicon bonding and eutectic bonding.
Silicon-silicon bonding techniques are the most difficult of all bonding techniques, and require that the surface of the silicon wafer to be bonded must have extremely high surface energy and extremely low surface roughness. Compared with other bonding technologies, the eutectic bonding has the advantages of low bonding temperature, good process condition tolerance, high material applicability, high bonding strength, low cost and the like, and has extremely strong tolerance to the surface unevenness of the bonded sheet. However, at the same time, the thermal expansion coefficients of many interposer materials and bonding wafer materials are different, so that the bonding body can generate larger thermal stress when the external temperature fluctuates, so that the long-term reliability of the bonding body is difficult to guarantee, and the interposer bonding is generally used in applications with low requirements on bonding quality.
Therefore, how to improve the process quality of wafer bonding is a technical problem to be solved at present.
Disclosure of Invention
The bonding method of the wafer improves the process quality of wafer bonding.
The embodiment of the invention provides a bonding method of wafers, which comprises the following steps:
Providing a first wafer and a second wafer;
Preparing bonding surfaces on the electrode end surfaces of the first wafer and the second wafer respectively;
Spraying a glue containing conductive particles on the end face of the electrode of the first wafer;
And bonding and fastening the first wafer and the second wafer, so that the bonding surfaces of the first wafer and the second wafer are electrically conducted through the conductive particles.
In an alternative embodiment, the conductive particles are conductive balls coated with an insulating film layer, and the conductive particles are pressed and exploded when the first wafer and the second wafer are bonded and fastened, so that the conductive balls have anisotropic conductive performance.
In an alternative embodiment, before the spraying the adhesive containing the conductive particles on the electrode end surface of the first wafer, the method further includes:
and cleaning, spin-drying and plasma treating the end face of the electrode.
In an alternative embodiment, the plasma treatment of the electrode end face includes:
Placing the first wafer into a vacuum cavity, and controlling the flow rate of the introduced oxygen to be 180-220sccm and the flow rate of the nitrogen to be 70-900sccm;
And adjusting the radio frequency power to 4.5-5.5KW, and finishing the treatment after the time length of the end face of the electrode reaches 25-35 s.
In an alternative embodiment, the spraying the adhesive containing conductive particles on the electrode end surface of the first wafer includes:
placing the first wafer on a coating table;
And controlling the coating platform to rotate at 280-320rpm and spraying the adhesive to the end face of the electrode, and stopping after the spraying time reaches 25-35 s.
In an alternative embodiment, after stopping after the duration to be sprayed reaches 25-35s, the method further comprises:
And controlling the coating table to accelerate to rotate at 1000-3000rpm, stopping rotating and standing for 55-65s after the time length is longer than 60 s.
In an alternative embodiment, the viscosity of the paste is less than 50cP and the diameter of the conductive particles is 3-5 μm.
In an alternative embodiment, the paste is sprayed to a thickness of 1.3-1.5 times the diameter of the conductive particles.
In an alternative embodiment, the glue is sprayed to a thickness of 4-9 μm.
In an alternative embodiment, the adhesively securing the first wafer and the second wafer includes:
The first wafer and the second wafer are respectively placed on a bonding carrier, and the bonding surface is optically positioned;
And controlling the bonding carrier to rotate, and applying 5-100N pressing pressure to the first wafer and the second wafer, wherein the pressing duration is less than 300s.
Compared with the prior art, the bonding method of the wafer has the following advantages:
According to the invention, the adhesive containing conductive particles is sprayed on the electrode end face of the first wafer, and then the first wafer and the second wafer are bonded and fastened, so that the bonding surface of a device on the wafer can be electrically conducted through the conductive particles after the first wafer and the second wafer are bonded and fastened, compared with silicon-silicon bonding and eutectic bonding, the whole bonding process is simpler and faster, the polishing treatment on the wafer is not required, and the high-temperature annealing treatment is not required in the bonding process, so that the process quality of wafer bonding is improved.
Drawings
In order to more clearly illustrate the embodiments of the present description or the technical solutions in the prior art, the drawings that are required for the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present description, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a bonding method of a wafer according to an embodiment of the present invention;
Fig. 2 is a schematic structural diagram of a first wafer after a bonding surface is prepared according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a first wafer and a paste according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a glue sprayed on a first wafer according to an embodiment of the present invention;
Fig. 5 is a schematic diagram of an adhesion structure of a first wafer and a second wafer according to an embodiment of the present invention;
fig. 6 is a schematic diagram of conductive particles before applying a pressing pressure according to an embodiment of the present invention;
Fig. 7 is a schematic diagram of a conductive particle after applying a pressing pressure according to an embodiment of the present invention.
Reference numerals illustrate: 1-first wafer, 2-bonding surface, 3-adhesive, 4-conductive particles, 5-second wafer, 6-bonding carrier, 7-insulating film layer and 8-conductive balls.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by those skilled in the art based on the embodiments of the present invention are within the scope of protection of the embodiments of the present invention.
The silicon-silicon bonding process is currently the most difficult of all bonding processes, and requires that the surface of the silicon wafer to be bonded must have extremely high surface energy and extremely low surface roughness. Silicon-silicon bonding is largely divided into four theoretical stages, as follows:
The first stage: hydroxyl adsorbed on the surface of the silicon at room temperature to 200 ℃ generates hydrogen bonds in a contact area, the hydroxyl obtains heat energy to increase mobility along with the temperature rise, silicon generates elastic deformation, and the bonding strength is increased due to the increase of the number of the hydrogen bonds.
And a second stage: between 200 ℃ and 400 ℃, two silicon alcohol bond polymerized wafers form hydrogen bonds, namely hydrated silicon hydrogen bonds, and the bond strength is rapidly increased.
Si-OH+HO-Si——Si-O-Si+H2O
And a third stage: between 500 ℃ and 800 ℃, the hydroxyl radical damages the bridged oxygen atoms and brings them into the bond with the surface negative charge of the bridged oxygen atoms.
HOH+Si-O-Si——2H++2Si-O-
Fourth stage: the water diffusion is obvious at the temperature of above 800 ℃, the water diffusion enters the silicon oxide to form a local vacuum cavity, the silicon is plastically deformed to eliminate the cavity, the silicon oxide generates viscous flow, the micro-gap is eliminated, and atoms at the close range are generated to form covalent bonds at the temperature of more than 1000 ℃ to form the complete bond.
Compared with other bonding technologies, the eutectic bonding has the advantages of low bonding temperature, good process condition tolerance, high material applicability, high bonding strength, low cost and the like, and has extremely strong tolerance to the surface unevenness of the bonded sheet. However, at the same time, the thermal expansion coefficients of many interposer materials and bonding wafer materials are different, so that a bonding body can generate larger thermal stress when the external temperature fluctuates, and long-term reliability of the bonding body is difficult to guarantee, therefore, the interposer bonding is generally used in applications with low requirements on bonding quality.
As described above, the bonding technology has a wide application prospect, but the implementation of the bonding technology also faces a plurality of difficulties, one of which is defect control of the bonding surface. The bonding difficulty of the polycrystalline wafer is higher than that of the double wafer, and three main reasons are as follows: firstly, as the total time of the whole process flow is increased, the exposure time of the polished surface of the silicon wafer in the air is increased, and the probability of being polluted is increased; secondly, in the bonding of double-layer silicon wafers, two silicon wafers can be mutually adapted through micro deformation to achieve tight bonding, and in the bonding of the multi-layer silicon wafers, the middle double-sided polished silicon wafer is difficult to simultaneously adapt to the upper and lower silicon wafers, so that high requirements are provided for the roughness and the warping degree of the upper and lower silicon wafers, the surface of the silicon wafer must be sufficiently flat, and the surface energy is sufficiently high, so that a large-area good bonding interface can be obtained; finally, the method includes the steps of; however, in the multi-layer bonding, the silicon wafer in the middle is polished on two sides, if a vacuum adsorption fixing method is still adopted, the surface performance of the adsorbed surface can be destroyed, impurity particles are easily introduced, and bonding is not facilitated.
The wafer bonding method provided by the embodiment of the invention can be suitable for multi-wafer bonding and also suitable for double-wafer bonding, and the embodiment of the invention takes double-wafer bonding as an example to specifically describe how to implement the wafer bonding method of the embodiment of the invention.
Referring to fig. 1, fig. 1 is a flowchart of a wafer bonding method according to an embodiment of the present invention, including:
S11, providing a first wafer and a second wafer.
Referring to fig. 2, fig. 2 only shows the first wafer. In this embodiment, the first wafer includes a substrate, the substrate is a silicon substrate, in other embodiments, the substrate may be another semiconductor substrate such as a silicon germanium substrate or a silicon on insulator substrate, and the invention is not limited in any way, and the step S12 is performed after the first wafer and the second wafer are provided.
And S12, preparing bonding surfaces on the electrode end surfaces of the first wafer and the second wafer respectively.
Specifically, the end face of the electrode is the end face of a device prepared on the first wafer and the second wafer, a plurality of devices are prepared on the end face of the electrode through preparation processes such as semiconductor etching, deposition, doping and the like, and the surfaces, which are required to be contacted with each other, of the devices of the wafer and the other wafer are bonding surfaces (or called conductive electrodes). After bonding, the devices of the first wafer and the second wafer can be electrically conducted so as to meet the preparation requirement of the semiconductor device, and the step S13 is carried out after the bonding surface is prepared.
S13, spraying adhesive containing conductive particles on the end face of the electrode of the first wafer.
Specifically, the spraying mode may be atomization spraying, the adhesive is compressed in the storage tank, and along with pressure release in the spraying process, the adhesive may be sprayed on the electrode end face of the first wafer. Referring to fig. 3, the conductive particles in the paste after spraying are deposited on the end surface of the electrode, the paste may be photoresist, and the conductive particles may be metal powder with excellent conductivity, such as silver powder and copper powder.
In the specific implementation, since the conductive particles are attached to the end face of the electrode by using the liquid glue in the glue as a carrier, the uniformity of the attachment is different due to direct spraying.
In a specific embodiment, before spraying the adhesive containing the conductive particles on the electrode end face of the first wafer, the method further comprises: and cleaning, spin-drying and plasma treating the end face of the electrode.
Specifically, deionized water can be used for cleaning in the treatment process, and then a spin dryer is used for spin-drying treatment; then placing the wafer in a vacuum cavity with plasma for oxygen plasma treatment, and removing organic impurities on the bonding surface, activating chemical bonds on the surface of the wafer and reducing the contact angle between the glue solution and the wafer.
In a specific embodiment, the plasma treatment of the electrode end face comprises:
placing the first wafer into a vacuum cavity, and controlling the flow rate of the introduced oxygen to be 180-220sccm and the flow rate of the nitrogen to be 70-900sccm; and adjusting the radio frequency power to 4.5-5.5KW, and finishing the treatment after the time length of the end face of the electrode reaches 25-35 s.
Specifically, the plasma treatment is implemented by using a plasma treatment device, after the first wafer is placed in a vacuum cavity, vacuumizing treatment is performed, after the vacuum degree reaches a preset value, oxygen and nitrogen are controlled to be introduced, the radio frequency power of the device is controlled to reach the preset value to perform the plasma treatment, and the treatment duration is ended after the treatment duration reaches the preset value. In this example, the radio frequency power used was 5KW, the oxygen gas flow rate was 200sccm, the nitrogen gas flow rate was 800sccm, and the treatment time period was 30s.
When the adhesive is sprayed, the sprayed adhesive is easy to cause to be incapable of being uniformly coated on the end face of the electrode of the first wafer due to atomization and flying.
In a specific embodiment, spraying a paste containing conductive particles on an electrode end surface of a first wafer includes:
Placing a first wafer on a coating table; and controlling the coating platform to rotate at 280-320rpm and spraying the adhesive to the end face of the electrode, and stopping after the spraying time reaches 25-35 s.
Specifically, the coating table is set to be a rotatable structure, the coating table is driven to rotate through a motor with adjustable speed, after the coating table is controlled to reach a preset rotating speed, the adhesive is coated to the end face of the electrode in the rotating process, so that the adhesive can be coated more uniformly, and the coating thickness is controlled through the spraying duration. It should be noted that, the above coating process can automatically complete uniform coating of the adhesive after setting corresponding parameters by the coater, the rotation speed is preferably set to 300rpm, and the spraying duration is preferably 30s. The spraying thickness of the adhesive is 1.3-1.5 times of the diameter of the conductive particles;
Or the spraying thickness of the adhesive is 4-9 mu m.
In a specific embodiment, after stopping after the spraying time reaches 25-35s, the method further comprises:
And (3) controlling the coating table to accelerate to rotate at 1000-3000rpm, stopping rotating and standing for 55-65s after the time length is longer than 60 s.
Specifically, referring to fig. 4, since the conductive particles are coated by using the liquid glue as a carrier, the coating table is controlled to accelerate rotation, so as to promote the glue with uneven distribution to flow further, and the conductive particles can be solidified at the position by standing, so as to further improve the uniformity and stability of the coating of the conductive particles.
By implementing the demonstration, the viscosity of the adhesive is less than 50cP, the diameter of the conductive particles is 3-5 mu m, and the appearance of the conductive particles is spherical. The conductive particles can be ensured to be uniformly coated on the electrode end surface of the first wafer within the parameters, and the step S14 is performed after the adhesive is coated.
S14, bonding and fastening the first wafer and the second wafer, and enabling the bonding surfaces of the first wafer and the second wafer to be electrically conducted through the conductive particles.
Specifically, referring to fig. 5, the electrode end surfaces of the first wafer and the second wafer are relatively bonded and fastened by the adhesive, the adhesive flows into the gaps between the conductive particles in the bonding process, and the bonding surfaces of the first wafer and the second wafer are electrically conducted due to the presence of the conductive particles, so that the bonding of the first wafer and the second wafer is completed.
In a specific embodiment, adhesively securing the first wafer and the second wafer comprises:
the first wafer and the second wafer are respectively arranged on a bonding carrier, and the bonding surface is optically positioned; and controlling the bonding carrier to rotate, and applying 5-100N pressing pressure to the first wafer and the second wafer, wherein the pressing duration is less than 300s.
Specifically, the bonding surfaces are distributed on the electrode end surfaces of the first wafer and the second wafer according to the preparation requirement of the semiconductor device, the bonding surfaces of the first wafer and the second wafer can be mutually aligned through optical positioning, bonding deviation is reduced, and the optical positioning can be completed through a laser alignment technology. After the pressing pressure is applied to the first wafer and the second wafer, bonding is firmer and tighter, and gaps are not easy to generate on the bonding surface, namely bonding gaps are not easy to generate, so that the quality of the bonding process is improved, and the wafers can be well electrically connected.
In a specific embodiment, the conductive particles are conductive balls coated with an insulating film layer, and the conductive particles are exploded when the first wafer and the second wafer are bonded and fastened, so that the conductive balls have anisotropic conductive performance.
Specifically, referring to fig. 7, the insulating film deforms along with the extrusion of the first wafer and the second wafer, the thickness of the insulating film at the contact position with the wafer gradually decreases, the insulating film is exploded after reaching the deformation limit, the conductive balls are attached to the bonding surfaces of the first wafer and the second wafer, and the area of the attaching surfaces gradually increases during the further extrusion process, so that the conductive balls have anisotropic conductive performance.
Compared with the prior art, the bonding method of the wafer has the following advantages:
According to the invention, the adhesive containing conductive particles is sprayed on the electrode end face of the first wafer, and then the first wafer and the second wafer are bonded and fastened, so that the bonding surface of a device on the wafer can be electrically conducted through the conductive particles after the first wafer and the second wafer are bonded and fastened, compared with silicon-silicon bonding and eutectic bonding, the whole bonding process is simpler and faster, the polishing treatment on the wafer is not required, and the high-temperature annealing treatment is not required in the bonding process, so that the process quality of wafer bonding is improved.
Finally it should be noted that while the preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments will occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention. It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims and the equivalents thereof, the present invention is also intended to include such modifications and variations.
Claims (8)
1. A method of bonding wafers, comprising:
Providing a first wafer and a second wafer;
Preparing bonding surfaces on the electrode end surfaces of the first wafer and the second wafer respectively;
Spraying a glue containing conductive particles on the end face of the electrode of the first wafer;
Bonding and fastening the first wafer and the second wafer, so that the bonding surfaces of the first wafer and the second wafer are electrically conducted through the conductive particles;
The spraying of the adhesive containing conductive particles on the electrode end face of the first wafer comprises the following steps:
placing the first wafer on a coating table;
controlling the coating table to rotate at 280-320rpm and spraying the adhesive to the end face of the electrode, and stopping after the spraying time length reaches 25-35 s;
after the to-be-sprayed time length reaches 25-35s, the method further comprises the following steps:
And controlling the coating table to accelerate to rotate at 1000-3000rpm, stopping rotating and standing for 55-65s after the time length is longer than 60 s.
2. The bonding method of wafers according to claim 1, wherein the conductive particles are conductive balls coated with an insulating film layer, and the conductive particles are pressure exploded when the first wafer and the second wafer are bonded and fastened, so that anisotropic conductive properties are generated in the conductive balls.
3. The method of bonding wafers according to claim 1, wherein before spraying the adhesive containing conductive particles on the electrode end face of the first wafer, further comprising:
and cleaning, spin-drying and plasma treating the end face of the electrode.
4. A bonding method of a wafer according to claim 3, wherein the plasma treatment of the electrode end face comprises:
Placing the first wafer into a vacuum cavity, and controlling the flow rate of the introduced oxygen to be 180-220sccm and the flow rate of the nitrogen to be 70-900sccm;
And adjusting the radio frequency power to 4.5-5.5KW, and finishing the treatment after the time length of the end face of the electrode reaches 25-35 s.
5. The method of bonding wafers according to claim 1, wherein the viscosity of the paste is less than 50cP and the diameter of the conductive particles is 3-5 μm.
6. The bonding method of wafers according to claim 1, wherein the thickness of the paste sprayed is 1.3 to 1.5 times the diameter of the conductive particles.
7. The bonding method of wafers according to claim 1, wherein the glue is sprayed to a thickness of 4-9 μm.
8. The method of bonding wafers according to claim 1, wherein the adhesively securing the first wafer and the second wafer comprises:
The first wafer and the second wafer are respectively placed on a bonding carrier, and the bonding surface is optically positioned;
And controlling the bonding carrier to rotate, and applying 5-100N pressing pressure to the first wafer and the second wafer, wherein the pressing duration is less than 300s.
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| CN107633997A (en) * | 2017-08-10 | 2018-01-26 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
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| US20070063347A1 (en) * | 2005-09-19 | 2007-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packages, anisotropic conductive films, and conductive particles utilized therein |
| KR100838647B1 (en) * | 2007-07-23 | 2008-06-16 | 한국과학기술원 | Manufacturing Method of Wafer Level Flip Chip Package Using AC / NCF Double Layer |
| TW200919649A (en) * | 2007-10-17 | 2009-05-01 | Advanced Semiconductor Eng | Semiconductor device and method for manufacturing the same using anisotropic conductive film |
| CN114420717A (en) * | 2022-01-13 | 2022-04-29 | Tcl华星光电技术有限公司 | Die bonding method of LED chip and LED panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0637146A (en) * | 1992-07-15 | 1994-02-10 | Hitachi Ltd | Microelectrode connecting structure and manufacture thereof |
| CN107633997A (en) * | 2017-08-10 | 2018-01-26 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
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