CN114989898A - Grinding and polishing residue cleaning solution and preparation method and application thereof - Google Patents
Grinding and polishing residue cleaning solution and preparation method and application thereof Download PDFInfo
- Publication number
- CN114989898A CN114989898A CN202210345358.2A CN202210345358A CN114989898A CN 114989898 A CN114989898 A CN 114989898A CN 202210345358 A CN202210345358 A CN 202210345358A CN 114989898 A CN114989898 A CN 114989898A
- Authority
- CN
- China
- Prior art keywords
- grinding
- cleaning solution
- parts
- cleaning
- aid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 91
- 238000000227 grinding Methods 0.000 title claims abstract description 46
- 238000005498 polishing Methods 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000004094 surface-active agent Substances 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002270 dispersing agent Substances 0.000 claims abstract description 14
- 239000003381 stabilizer Substances 0.000 claims abstract description 13
- -1 1,3-dimethylbutyl Chemical group 0.000 claims description 24
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 15
- 239000005304 optical glass Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 10
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 10
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 10
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 7
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 7
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- 239000011976 maleic acid Substances 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229920001451 polypropylene glycol Polymers 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- TVFWYUWNQVRQRG-UHFFFAOYSA-N 2,3,4-tris(2-phenylethenyl)phenol Chemical group C=1C=CC=CC=1C=CC1=C(C=CC=2C=CC=CC=2)C(O)=CC=C1C=CC1=CC=CC=C1 TVFWYUWNQVRQRG-UHFFFAOYSA-N 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- 239000013538 functional additive Substances 0.000 claims description 3
- 150000003333 secondary alcohols Chemical group 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 9
- 239000011574 phosphorus Substances 0.000 abstract description 9
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 abstract description 6
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 6
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000012847 fine chemical Substances 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- BTJYKXPSPBJJDQ-UHFFFAOYSA-M sodium;1,4-bis(4-methylpentan-2-yloxy)-1,4-dioxobutane-2-sulfonate Chemical compound [Na+].CC(C)CC(C)OC(=O)CC(S([O-])(=O)=O)C(=O)OC(C)CC(C)C BTJYKXPSPBJJDQ-UHFFFAOYSA-M 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 239000001509 sodium citrate Substances 0.000 description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ABPYVNPDRFJZEU-UHFFFAOYSA-N 2-(2,2,2-triphenylethyl)phenol Chemical compound OC1=CC=CC=C1CC(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 ABPYVNPDRFJZEU-UHFFFAOYSA-N 0.000 description 1
- OQUFOZNPBIIJTN-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;sodium Chemical compound [Na].OC(=O)CC(O)(C(O)=O)CC(O)=O OQUFOZNPBIIJTN-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 241000192700 Cyanobacteria Species 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 229920002125 Sokalan® Chemical class 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 1
- 239000011609 ammonium molybdate Substances 0.000 description 1
- 229940010552 ammonium molybdate Drugs 0.000 description 1
- 235000018660 ammonium molybdate Nutrition 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 125000005588 carbonic acid salt group Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 238000012851 eutrophication Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/123—Sulfonic acids or sulfuric acid esters; Salts thereof derived from carboxylic acids, e.g. sulfosuccinates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2041—Dihydric alcohols
- C11D3/2044—Dihydric alcohols linear
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2089—Ether acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3707—Polyethers, e.g. polyalkyleneoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/16—Metals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/18—Glass; Plastics
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/24—Mineral surfaces, e.g. stones, frescoes, plasters, walls or concretes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明属于精细化工技术领域,具体公开了一种研磨抛光残留物清洗液及其制备方法与应用。本发明通过将具有支链结构的表面活性剂、超高分子量聚乙二醇漂洗助剂、分散剂、自消泡型清洗助剂、功能助剂和稳定剂添加到水中,混合均匀后,过滤得到一种研磨抛光残留物清洗液。本发明避免了氮磷元素的引入,解决了对环境危害大的问题,具有绿色环保特点,同时还具有优异的清洗功能;而且制备方法简单,易于大规模批量化生产,适用范围广泛。
The invention belongs to the technical field of fine chemical industry, and specifically discloses a cleaning solution for grinding and polishing residues and a preparation method and application thereof. In the present invention, surfactant with branched structure, ultra-high molecular weight polyethylene glycol rinsing aid, dispersant, self-defoaming cleaning aid, functional aid and stabilizer are added to water, mixed uniformly, and filtered. A cleaning solution for abrasive polishing residues is obtained. The invention avoids the introduction of nitrogen and phosphorus elements, solves the problem of great harm to the environment, has the characteristics of green environmental protection, and also has excellent cleaning function; and the preparation method is simple, easy for large-scale batch production, and has a wide range of applications.
Description
技术领域technical field
本发明涉及精细化工技术领域,尤其涉及一种研磨抛光残留物清洗液及其制备方法与应用。The invention relates to the technical field of fine chemicals, in particular to a cleaning solution for grinding and polishing residues and a preparation method and application thereof.
背景技术Background technique
化学研磨和抛光是规模化先进材料或器件制造过程中表面平坦化的先进技术,其将机械研磨与化学反应有机地结合起来,可实现超精密无损伤表面加工,在航空、航天、微电子、集成电路制造等众多领域得到了广泛应用。研磨和抛光液通常由去离子水、油酯溶剂、磨料、pH值调节剂、氧化剂以及分散剂等组分组成。磨料起磨削作用,常用的磨料有氧化硅、碳化硅、碳化硼、金刚石、氧化铁、氧化铬和氧化铈等。Chemical grinding and polishing is an advanced technology for surface flattening in the process of large-scale advanced material or device manufacturing. It organically combines mechanical grinding and chemical reaction to achieve ultra-precision non-destructive surface processing. It is used in aviation, aerospace, microelectronics, It has been widely used in many fields such as integrated circuit manufacturing. Grinding and polishing slurries usually consist of components such as deionized water, oily ester solvents, abrasives, pH adjusters, oxidants, and dispersants. Abrasives play a role in grinding. Commonly used abrasives are silicon oxide, silicon carbide, boron carbide, diamond, iron oxide, chromium oxide and cerium oxide.
研磨和抛光后表面残留物清洗不干净会导致产品合格率降低,由于表面残留物清洗不干净导致的次品可占总次品的50%以上,可见,清洗质量的高低已经严重影响到了产品的性能、可靠性与稳定性。研磨和抛光后残留物除作用功能组分残留外,研磨和抛光被磨削的粉体也附着于表面或被挤压在浅表面层,均需要被彻底清洗。清洗液清洗是和残留物进行物理和化学作用,使污染物溶于清洗液而脱离基体表面,或破坏污染物与基体表面之间的键合作用而使之脱离。Improper cleaning of surface residues after grinding and polishing will lead to lower product qualification rates. Defective products caused by unclean surface residues can account for more than 50% of the total defective products. It can be seen that the level of cleaning quality has seriously affected the quality of the product. Performance, reliability and stability. In addition to the residual functional components after grinding and polishing, the ground powder also adheres to the surface or is squeezed into the shallow surface layer, which needs to be thoroughly cleaned. Cleaning liquid cleaning is to carry out physical and chemical action with the residue, so that the pollutants are dissolved in the cleaning liquid and detached from the surface of the substrate, or the bonding between the pollutants and the surface of the substrate is destroyed and detached.
行业商业化清洗液和公开资料显示,现有的清洗液通常含有有机碱、乙二胺四乙酸和磷酸盐、多乙烯基多胺、烷基磷酸盐或含氮阳离子表面活性剂等组分,以实现研磨和抛光后清洗残留物的目的。此类清洗液富含氮磷元素,废水排放会加剧水体富营养化和蓝藻化,污染环境。Commercial cleaning solutions and public information in the industry show that existing cleaning solutions usually contain components such as organic bases, ethylenediaminetetraacetic acid and phosphates, polyvinylpolyamines, alkyl phosphates or nitrogen-containing cationic surfactants. To achieve the purpose of cleaning residues after grinding and polishing. This kind of cleaning liquid is rich in nitrogen and phosphorus elements, and the discharge of wastewater will aggravate the eutrophication and cyanobacteria of the water body and pollute the environment.
因此,如何提供一种研磨抛光残留物清洗液及其制备方法与应用,提高清洗效果,避免氮磷元素的引入,提高清洗液的环保性能是本领域亟待解决的难题。Therefore, how to provide a cleaning solution for grinding and polishing residues, and a preparation method and application thereof, so as to improve the cleaning effect, avoid the introduction of nitrogen and phosphorus elements, and improve the environmental protection performance of the cleaning solution is an urgent problem to be solved in the art.
发明内容SUMMARY OF THE INVENTION
有鉴于此,本发明提供了一种研磨抛光残留物清洗液及其制备方法与应用,本发明避免了富含氮磷元素等组分的添加,强化了清洗液的清洗效果,拓展了其应用范围。In view of this, the present invention provides a cleaning solution for grinding and polishing residues and a preparation method and application thereof. The invention avoids the addition of components rich in nitrogen and phosphorus elements, strengthens the cleaning effect of the cleaning solution, and expands its application. scope.
为了达到上述目的,本发明采用如下技术方案:In order to achieve the above object, the present invention adopts the following technical solutions:
一种研磨抛光残留物清洗液,包括如下质量份数的组分:表面活性剂0.5~5份,漂洗助剂0.1~1份,分散剂0.5~5份,清洗助剂5~10份,功能助剂1~10份,稳定剂5~20份,水50~85份。A cleaning solution for grinding and polishing residues, comprising the following components in parts by mass: 0.5-5 parts of surfactant, 0.1-1 part of rinsing aid, 0.5-5 parts of dispersant, 5-10 parts of cleaning aid, functional 1-10 parts of auxiliary, 5-20 parts of stabilizer, 50-85 parts of water.
优选的,所述表面活性剂为仲醇聚氧乙烯醚和/或磺化琥珀酸双(1,3-二甲丁醇)酯盐。Preferably, the surfactant is a secondary alcohol polyoxyethylene ether and/or bis(1,3-dimethylbutanol) sulfosuccinate.
优选的,所述漂洗助剂为聚乙二醇;Preferably, the rinse aid is polyethylene glycol;
其中,聚乙二醇的分子量为10~40万道尔顿。Wherein, the molecular weight of polyethylene glycol is 100,000 to 400,000 Daltons.
优选的,所述分散剂为三苯乙基苯酚聚氧丙烯聚氧乙烯嵌段聚合物和/或萘酚聚氧乙烯醚。Preferably, the dispersant is tristyrylphenol polyoxypropylene polyoxyethylene block polymer and/or naphthol polyoxyethylene ether.
优选的,所述清洗助剂为自消泡型醚羧酸。Preferably, the cleaning aid is a self-defoaming ether carboxylic acid.
优选的,所述功能助剂为丙烯酸和马来酸聚合物盐、碳酸盐、硅酸盐和柠檬酸盐中的一种或几种;Preferably, the functional auxiliary is one or more of acrylic acid and maleic acid polymer salt, carbonate, silicate and citrate;
其中,所述丙烯酸和马来酸聚合物盐的分子量≥1万道尔顿。Wherein, the molecular weight of the acrylic acid and maleic acid polymer salts is greater than or equal to 10,000 Daltons.
优选的,所述稳定剂为异构烷烃硫酸盐、乙二醇和丙二醇中的一种或几种。Preferably, the stabilizer is one or more of isoparaffin sulfate, ethylene glycol and propylene glycol.
本发明的另一目的是提供一种研磨抛光残留物清洗液的制备方法,具体制备步骤如下:Another object of the present invention is to provide a kind of preparation method of grinding and polishing residue cleaning liquid, and concrete preparation steps are as follows:
将表面活性剂、漂洗助剂、分散剂、清洗助剂、功能助剂、稳定剂与水混合,过滤得到研磨抛光残留物清洗液。Mixing surfactant, rinsing aid, dispersing agent, cleaning aid, functional aid and stabilizer with water, and filtering to obtain a cleaning solution for grinding and polishing residues.
本发明的再一目的是提供一种研磨抛光残留物清洗液在半导体硅、蓝宝石、砷化镓、光学玻璃和金属器件洗涤过程中的应用。Another object of the present invention is to provide an application of a cleaning solution for grinding and polishing residues in the cleaning process of semiconductor silicon, sapphire, gallium arsenide, optical glass and metal devices.
本发明公开的表面活性剂具有支链结构,能够呈现出更优异的润湿乳化性能,可促进清洗液在清洗界面的铺展,快速润湿磨料,高效乳化油溶性介质。清洗助剂具有短碳链烷基链和羧基结构,可深入清洗界面浅表面,渗透剥离残留物;此外,其显著的自消泡属性,给予清洗液泡沫可控的显著特点,利于操作工艺管控。功能助剂可起到调节清洗液pH值的作用,本发明公开的研磨抛光残留物清洗液为弱酸性或中性,可以避免清洗液对被清洗界面形成碱性腐蚀;硅酸盐、碳酸盐、柠檬酸盐和高分子量马来酸盐和丙烯酸聚合物盐还可以结合金属离子,避免离子残留。稳定剂提供清洗液低温条件下,或高温条件下的存储稳定性,使清洗液均匀一致,保证使用的可靠稳定性。本发明所述分散剂具有电子共轭结构官能团结构,有利于避免清洗液中的磨料和有机高分子回粘于表面,造成的二次污染。因多支链化表面活性剂具有高效表面活性,易于铺展,会加重清洗后漂洗负担,易于造成漂洗不净而残留的问题,超高分子量的聚乙二醇漂洗助剂可提高清洗液的过水性,显著降低潜在残留的可能性。The surfactant disclosed in the invention has a branched chain structure, can exhibit more excellent wetting and emulsifying properties, can promote the spreading of the cleaning solution on the cleaning interface, quickly wet the abrasive, and efficiently emulsify the oil-soluble medium. The cleaning aid has a short carbon-chain alkyl chain and a carboxyl structure, which can deeply clean the shallow surface of the interface and penetrate and peel off residues; in addition, its remarkable self-defoaming properties give the cleaning solution a remarkable feature of controllable foam, which is conducive to the control of the operation process . The functional additives can play the role of adjusting the pH value of the cleaning solution. The cleaning solution for grinding and polishing residues disclosed in the present invention is weakly acidic or neutral, which can prevent the cleaning solution from forming alkaline corrosion on the cleaned interface; silicate, carbonic acid Salts, citrates, and high molecular weight maleate and acrylic acid polymer salts can also bind metal ions and avoid ion residues. The stabilizer provides the storage stability of the cleaning solution under low temperature conditions or high temperature conditions, so that the cleaning solution is uniform and consistent, ensuring reliable and stable use. The dispersant of the invention has an electronic conjugated structure functional group structure, which is beneficial to avoid secondary pollution caused by the abrasives and organic macromolecules in the cleaning solution sticking back to the surface. Because the multi-branched surfactant has high surface activity and is easy to spread, it will increase the burden of rinsing after cleaning, and it is easy to cause the problem of unclean and residual rinsing. The ultra-high molecular weight polyethylene glycol rinse aid can improve the cleaning solution. Aqueous, significantly reducing the likelihood of potential carryover.
经由上述的技术方案可知,与现有技术相比,本发明具有以下有益效果:As can be seen from the above-mentioned technical solutions, compared with the prior art, the present invention has the following beneficial effects:
(1)本发明公开的研磨抛光残留物清洗液配方科学合理,避免了氮磷元素的引入,绿色环保;同时还具有优异的清洗功能。(1) The formula of the cleaning solution for grinding and polishing residues disclosed in the present invention is scientific and reasonable, avoids the introduction of nitrogen and phosphorus elements, is green and environmentally friendly, and also has excellent cleaning functions.
(2)本发明公开的制备方法简单,易于大规模批量化生产。(2) The preparation method disclosed in the present invention is simple and easy to produce in large-scale batches.
(3)本发明公开的研磨抛光残留物清洗液适用范围广泛,能够满足半导体硅、蓝宝石、砷化镓、光学玻璃和金属器件等材质的清洗,不会在半导体硅和砷化镓等敏感材料表面形成碱性腐蚀。(3) The cleaning solution for grinding and polishing residues disclosed in the present invention has a wide range of applications, can meet the cleaning of semiconductor silicon, sapphire, gallium arsenide, optical glass and metal devices and other materials, and will not be used in sensitive materials such as semiconductor silicon and gallium arsenide. Alkaline corrosion is formed on the surface.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to the provided drawings without creative work.
图1为采用实施例1制备的研磨抛光残留物清洗液对光学玻璃清洗结果图;Fig. 1 is a result diagram of optical glass cleaning using the grinding and polishing residue cleaning solution prepared in Example 1;
图2为含磷的研磨清洗液对光学玻璃清洗结果图;Fig. 2 is the result diagram of optical glass cleaning with phosphorus-containing grinding cleaning solution;
图3为含氮的无泡光学玻璃清洗液对光学玻璃清洗结果图。FIG. 3 is a graph showing the results of cleaning optical glass with a nitrogen-containing non-foaming optical glass cleaning solution.
具体实施方式Detailed ways
本发明提供了一种研磨抛光残留物清洗液,包括如下质量份数的组分:表面活性剂0.5~5份,漂洗助剂0.1~1份,分散剂0.5~5份,清洗助剂5~10份,功能助剂1~10份,稳定剂5~20份,水50~85份;优选为表面活性剂1~4份,漂洗助剂0.3~0.8份,分散剂2~4份,清洗助剂6~8份,功能助剂5~9份,稳定剂8~14份,水60~80份;进一步优选为表面活性剂2份,漂洗助剂0.5份,分散剂3份,清洗助剂7份,功能助剂8份,稳定剂10份,水70份。The invention provides a cleaning solution for grinding and polishing residues, comprising the following components in parts by mass: 0.5-5 parts of surfactant, 0.1-1 part of rinsing aid, 0.5-5 parts of dispersant, and 5-5 parts of cleaning aid 10 parts, 1-10 parts of functional auxiliary, 5-20 parts of stabilizer, 50-85 parts of water; preferably 1-4 parts of surfactant, 0.3-0.8 parts of rinse aid, 2-4 parts of dispersant, cleaning 6-8 parts of auxiliary agent, 5-9 parts of functional auxiliary agent, 8-14 parts of stabilizer, 60-80 parts of water; more preferably 2 parts of surfactant, 0.5 part of rinse auxiliary, 3 parts of dispersant, cleaning auxiliary 7 parts of additives, 8 parts of functional additives, 10 parts of stabilizers, and 70 parts of water.
在本发明中,所述表面活性剂为具有支链结构的表面活性剂,优选为仲醇聚氧乙烯醚和/或磺化琥珀酸双(1,3-二甲丁醇)酯盐,进一步优选为Softanol-120/90/70/50/30中的一种和AEROSOL MA 80质量比为1:1的组合物。In the present invention, the surfactant is a surfactant with a branched chain structure, preferably a secondary alcohol polyoxyethylene ether and/or a bis(1,3-dimethylbutanol) sulfosuccinate salt, and further It is preferably a composition in which the mass ratio of one of Softanol-120/90/70/50/30 and AEROSOL MA 80 is 1:1.
在本发明中,所述漂洗助剂为聚乙二醇,聚乙二醇的分子量为10~40万道尔顿,优选为15-35万道尔顿,进一步优选为30万道尔顿。In the present invention, the rinse aid is polyethylene glycol, and the molecular weight of polyethylene glycol is 100,000-400,000 Daltons, preferably 150,000-350,000 Daltons, and more preferably 300,000 Daltons.
在本发明中,所述分散剂为三苯乙基苯酚聚氧丙烯聚氧乙烯嵌段聚合物和/或萘酚聚氧乙烯醚,优选为萘酚聚氧乙烯醚Lugalvan BNO 12。In the present invention, the dispersant is a tristyryl phenol polyoxypropylene polyoxyethylene block polymer and/or a naphthol polyoxyethylene ether, preferably a naphthol polyoxyethylene ether Lugalvan BNO 12.
在本发明中,所述清洗助剂为自消泡型醚羧酸,优选为AKYPO LF2。In the present invention, the cleaning aid is a self-defoaming ether carboxylic acid, preferably AKYPO LF2.
在本发明中,所述功能助剂为丙烯酸和马来酸聚合物盐、碳酸盐、硅酸盐和柠檬酸盐中的一种或几种,优选为柠檬酸盐,进一步优选为柠檬酸钠。In the present invention, the functional auxiliary agent is one or more of acrylic acid and maleic acid polymer salt, carbonate, silicate and citrate, preferably citrate, more preferably citric acid sodium.
其中,所述丙烯酸和马来酸聚合物盐的分子量≥1万道尔顿。Wherein, the molecular weight of the acrylic acid and maleic acid polymer salts is greater than or equal to 10,000 Daltons.
在本发明中,所述稳定剂为异构烷烃硫酸盐、乙二醇和丙二醇中的一种或几种,优选为异构烷烃硫酸盐。In the present invention, the stabilizer is one or more of isoparaffin sulfate, ethylene glycol and propylene glycol, preferably isoparaffin sulfate.
在本发明中,所述水优选为去离子水。In the present invention, the water is preferably deionized water.
本发明还提供了一种研磨抛光残留物清洗液的制备方法,具体制备步骤如下:The present invention also provides a method for preparing a cleaning solution for grinding and polishing residues, and the specific preparation steps are as follows:
将表面活性剂、漂洗助剂、分散剂、清洗助剂、功能助剂、稳定剂与水混合,过滤得到研磨抛光残留物清洗液。Mixing surfactant, rinsing aid, dispersing agent, cleaning aid, functional aid and stabilizer with water, and filtering to obtain a cleaning solution for grinding and polishing residues.
在本发明中,过滤步骤的过滤精度优选为0.3μm。In the present invention, the filtering precision of the filtering step is preferably 0.3 μm.
本发明还提供了一种研磨抛光残留物清洗液在半导体硅、蓝宝石、砷化镓、光学玻璃和金属器件洗涤过程中的应用。The invention also provides the application of a cleaning solution for grinding and polishing residues in the cleaning process of semiconductor silicon, sapphire, gallium arsenide, optical glass and metal devices.
在本发明中,所述研磨抛光残留物清洗液在应用时优选为将研磨抛光残留物清洗液和水以质量比3~10:100混合后使用,进一步优选为4~8:100,再进一步优选为6:100。In the present invention, the grinding and polishing residue cleaning solution is preferably used after mixing the grinding and polishing residue cleaning solution with water in a mass ratio of 3-10:100, more preferably 4-8:100, and further Preferably 6:100.
在本发明中,洗涤温度优选为40~70℃,进一步优选为50℃;洗涤时间优选为3~10min,进一步优选为2~8min,再进一步优选为5min。In the present invention, the washing temperature is preferably 40-70°C, more preferably 50°C; the washing time is preferably 3-10 minutes, more preferably 2-8 minutes, and still more preferably 5 minutes.
在本发明中,洗涤过程中还包括超声辅助。In the present invention, ultrasonic assistance is also included in the washing process.
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
实施例1Example 1
将2份Softanol-120表面活性剂、2份AEROSOL MA 80表面活性剂、0.5份超高分子量聚乙二醇(分子量为30万道尔顿)、3份Lugalvan BNO 12萘酚聚氧乙烯醚、8份AKYPO LF2自消泡型醚羧酸、6份硅酸钠、5份乙二醇、5份丙二醇加入到65份去离子水中,混合均匀后经过0.3μm精度过滤得到研磨抛光残留物清洗液。2 parts Softanol-120 surfactant, 2 parts AEROSOL MA 80 surfactant, 0.5 part ultra-high molecular weight polyethylene glycol (molecular weight 300,000 Daltons), 3 parts Lugalvan BNO 12 naphthol polyoxyethylene ether, 8 parts of AKYPO LF2 self-defoaming ether carboxylic acid, 6 parts of sodium silicate, 5 parts of ethylene glycol, and 5 parts of propylene glycol were added to 65 parts of deionized water, mixed evenly, and filtered with a precision of 0.3 μm to obtain a cleaning solution for grinding and polishing residues .
实施例2Example 2
将3份15-S-9表面活性剂、0.1份超高分子量聚乙二醇(分子量为10万道尔顿)、5份三苯乙基苯酚聚氧丙烯聚氧乙烯嵌段聚合物(1601#聚醚)、5份AKYPO LF2自消泡型醚羧酸、8份柠檬酸钠、5份异构烷烃硫酸钠(solvay BOS)加入到50份去离子水中,混合均匀后经过0.3μm精度过滤得到研磨抛光残留物清洗液。3 parts of 15-S-9 surfactant, 0.1 part of ultra-high molecular weight polyethylene glycol (molecular weight of 100,000 Daltons), 5 parts of triphenylethylphenol polyoxypropylene polyoxyethylene block polymer (1601 #polyether), 5 parts of AKYPO LF2 self-defoaming ether carboxylic acid, 8 parts of sodium citrate, 5 parts of isoparaffin sodium sulfate (solvay BOS) were added to 50 parts of deionized water, mixed well and filtered with 0.3μm precision A cleaning solution for grinding and polishing residues is obtained.
实施例3Example 3
将2份Softanol-90表面活性剂、3份AEROSOL MA 80表面活性剂、1份超高分子量聚乙二醇(分子量为20万道尔顿)、5份Lugalvan BNO 12萘酚聚氧乙烯醚、10份AKYPO LF2自消泡型醚羧酸、10份柠檬酸钠、20份乙二醇加入到85份去离子水中,混合均匀后经过0.3μm精度过滤得到研磨抛光残留物清洗液。Combine 2 parts Softanol-90 surfactant, 3 parts AEROSOL MA 80 surfactant, 1 part ultra-high molecular weight polyethylene glycol (molecular weight 200,000 Daltons), 5 parts Lugalvan BNO 12 naphthol polyoxyethylene ether, 10 parts of AKYPO LF2 self-defoaming ether carboxylic acid, 10 parts of sodium citrate, and 20 parts of ethylene glycol were added to 85 parts of deionized water, mixed evenly, and filtered with a precision of 0.3 μm to obtain a cleaning solution for grinding and polishing residues.
实施例4Example 4
将0.5份AEROSOL MA 80表面活性剂、0.1份超高分子量聚乙二醇(分子量为40万道尔顿)、0.5份LugalvanBNO 12萘酚聚氧乙烯醚、5份AKYPO LF2自消泡型醚羧酸、1份柠檬酸钠、5份丙二醇加入到50份去离子水中,混合均匀后经过0.3μm精度过滤得到研磨抛光残留物清洗液。0.5 part of AEROSOL MA 80 surfactant, 0.1 part of ultra-high molecular weight polyethylene glycol (molecular weight of 400,000 Daltons), 0.5 part of LugalvanBNO 12 naphthol polyoxyethylene ether, 5 parts of AKYPO LF2 self-defoaming ether carboxyl Acid, 1 part of sodium citrate, and 5 parts of propylene glycol are added to 50 parts of deionized water, mixed evenly, and filtered with a precision of 0.3 μm to obtain a cleaning solution for grinding and polishing residues.
实验例1Experimental example 1
分别取实施例1~4制备的研磨抛光残留物清洗液对光学玻璃进行清洗,采用实施例1制备的研磨抛光残留物清洗液清洗结果如图1所示,可见采用本发明所述研磨抛光残留物清洗液清洗后的光学玻璃不存在研磨粉残留、油性介质残留的情况(图2为采用含磷的研磨清洗液(三达奥克生产)清洗结果图,图3为采用含氮的无泡光学玻璃清洗液(三达奥克生产)清洗结果图)。The optical glass was cleaned with the grinding and polishing residue cleaning solutions prepared in Examples 1 to 4, respectively. The cleaning results of the grinding and polishing residue cleaning solutions prepared in Example 1 are shown in Figure 1. It can be seen that the grinding and polishing residues of the present invention are used. The optical glass after cleaning with the organic cleaning solution has no residual grinding powder and oily medium (Fig. 2 shows the cleaning results with phosphorus-containing abrasive cleaning solution (produced by Sandaoke), and Fig. 3 shows the use of nitrogen-containing non-foaming Optical glass cleaning solution (manufactured by Sandaoke) cleaning results.
分别采用氨氮测定试剂盒和钼酸铵分光光度法(GB 11893-89)对本发明实施例1~4制备的研磨抛光残留物清洗液进行氨氮测试以及总磷的测试;并未检出氮磷元素。Ammonia nitrogen determination kit and ammonium molybdate spectrophotometry (GB 11893-89) were respectively used to conduct ammonia nitrogen test and total phosphorus test on the cleaning solutions of grinding and polishing residues prepared in Examples 1 to 4 of the present invention; nitrogen and phosphorus elements were not detected. .
本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the various embodiments can be referred to each other.
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210345358.2A CN114989898B (en) | 2022-04-02 | 2022-04-02 | Grinding and polishing residue cleaning liquid and preparation method and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210345358.2A CN114989898B (en) | 2022-04-02 | 2022-04-02 | Grinding and polishing residue cleaning liquid and preparation method and application thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114989898A true CN114989898A (en) | 2022-09-02 |
CN114989898B CN114989898B (en) | 2023-10-20 |
Family
ID=83023356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210345358.2A Active CN114989898B (en) | 2022-04-02 | 2022-04-02 | Grinding and polishing residue cleaning liquid and preparation method and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114989898B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116656320A (en) * | 2023-05-19 | 2023-08-29 | 大连奥首科技有限公司 | Microalgae-based polishing abrasive, polishing solution containing microalgae-based polishing abrasive, preparation method of microalgae-based polishing abrasive and application of microalgae-based polishing abrasive |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001064680A (en) * | 1999-06-23 | 2001-03-13 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
US20130053291A1 (en) * | 2011-08-22 | 2013-02-28 | Atsushi Otake | Composition for cleaning substrates post-chemical mechanical polishing |
CN105505230A (en) * | 2016-02-16 | 2016-04-20 | 章建群 | Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers |
CN106190615A (en) * | 2016-07-06 | 2016-12-07 | 三达奥克化学股份有限公司 | Semiconductor silicon wafer cleaning solution and production method |
CN108822987A (en) * | 2018-06-06 | 2018-11-16 | 天通(嘉兴)新材料有限公司 | A kind of novel sapphire cleaning agent |
CN109576090A (en) * | 2018-12-13 | 2019-04-05 | 中国科学院上海光学精密机械研究所 | Leftover cleaning agent and preparation method thereof after the chemically mechanical polishing of oxide optical element |
US20200318030A1 (en) * | 2017-10-10 | 2020-10-08 | Hydrant International Trading Co., Ltd. | Fabrication fluids |
CN113322121A (en) * | 2021-05-28 | 2021-08-31 | 上海尤希路化学工业有限公司 | SiC third-generation power semiconductor wafer cutting liquid for new energy automobile |
CN113462491A (en) * | 2021-05-21 | 2021-10-01 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing cleaning solution and use method thereof |
CN113512728A (en) * | 2021-06-25 | 2021-10-19 | 深圳市恒纬祥科技有限公司 | Cleaning agent for removing silicon dioxide grinding fluid on surface of 6-series aluminum alloy |
CN113881510A (en) * | 2020-07-02 | 2022-01-04 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing cleaning solution and use method thereof |
-
2022
- 2022-04-02 CN CN202210345358.2A patent/CN114989898B/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001064680A (en) * | 1999-06-23 | 2001-03-13 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
US20130053291A1 (en) * | 2011-08-22 | 2013-02-28 | Atsushi Otake | Composition for cleaning substrates post-chemical mechanical polishing |
CN105505230A (en) * | 2016-02-16 | 2016-04-20 | 章建群 | Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers |
CN106190615A (en) * | 2016-07-06 | 2016-12-07 | 三达奥克化学股份有限公司 | Semiconductor silicon wafer cleaning solution and production method |
US20200318030A1 (en) * | 2017-10-10 | 2020-10-08 | Hydrant International Trading Co., Ltd. | Fabrication fluids |
CN108822987A (en) * | 2018-06-06 | 2018-11-16 | 天通(嘉兴)新材料有限公司 | A kind of novel sapphire cleaning agent |
CN109576090A (en) * | 2018-12-13 | 2019-04-05 | 中国科学院上海光学精密机械研究所 | Leftover cleaning agent and preparation method thereof after the chemically mechanical polishing of oxide optical element |
CN113881510A (en) * | 2020-07-02 | 2022-01-04 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing cleaning solution and use method thereof |
CN113462491A (en) * | 2021-05-21 | 2021-10-01 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing cleaning solution and use method thereof |
CN113322121A (en) * | 2021-05-28 | 2021-08-31 | 上海尤希路化学工业有限公司 | SiC third-generation power semiconductor wafer cutting liquid for new energy automobile |
CN113512728A (en) * | 2021-06-25 | 2021-10-19 | 深圳市恒纬祥科技有限公司 | Cleaning agent for removing silicon dioxide grinding fluid on surface of 6-series aluminum alloy |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116656320A (en) * | 2023-05-19 | 2023-08-29 | 大连奥首科技有限公司 | Microalgae-based polishing abrasive, polishing solution containing microalgae-based polishing abrasive, preparation method of microalgae-based polishing abrasive and application of microalgae-based polishing abrasive |
CN116656320B (en) * | 2023-05-19 | 2025-06-17 | 大连奥首科技有限公司 | A microalgae-based polishing abrasive and a polishing liquid containing the same, and preparation method and use thereof |
Also Published As
Publication number | Publication date |
---|---|
CN114989898B (en) | 2023-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8324143B2 (en) | Cleaning agent for electronic materials | |
KR100750603B1 (en) | Cleaning solution for substrates of electronic materials | |
KR101520917B1 (en) | Texturing and cleaning agent for the surface treatment of wafers and use thereof | |
KR100748410B1 (en) | Substrate surface cleaning liquid mediums and cleaning method | |
KR101232249B1 (en) | Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process | |
TW200304962A (en) | Liquid detergent for semiconductor device substrate and method of cleaning | |
TWI794152B (en) | Composition for post chemical- mechanical- polishing cleaning | |
KR101956388B1 (en) | Cleaning solution composition for sapphire wafer | |
TW201139306A (en) | Preparation of synthetic quartz glass substrates | |
CN114989898A (en) | Grinding and polishing residue cleaning solution and preparation method and application thereof | |
CN103521474B (en) | Method for cleaning surfaces of sapphire substrate materials by using polishing to replace washing | |
CN101255386A (en) | Cleaning solution for chemical mechanical polishing of semiconductor silicon wafer | |
CN101289641A (en) | Cleaning agent for wafer polishing | |
CN105505230A (en) | Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers | |
CN106190615A (en) | Semiconductor silicon wafer cleaning solution and production method | |
JP3365980B2 (en) | Detergent composition | |
CN101093363A (en) | Cleaning liquid in use for removing photoresist on integrate circuit | |
CN114214131A (en) | Cleaning solution after wafer substrate polishing process | |
JP7605129B2 (en) | Ceramic compound removing cleaning solution, cleaning method and semiconductor wafer manufacturing method | |
US6095161A (en) | Processing and post-processing compositions and methods of using same | |
CN101289640A (en) | Cleaning agent for wafer polishing | |
TWI832902B (en) | Cleaning liquid composition | |
CN109712869A (en) | CMP polymer minimizing technology | |
CN114292707B (en) | Nano colloid particle, preparation method, cleaning agent containing nano colloid particle and cleaning method | |
KR101799282B1 (en) | Cleaning composite of semiconductor wafer and display panel and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |