CN114787415B - High-density plasma enhanced chemical vapor deposition chamber - Google Patents

Abstract

The present disclosure relates to methods and apparatus for showerheads for deposition chambers. In one embodiment, a showerhead for a plasma deposition chamber is provided, comprising a plurality of perforated bricks, each of which is coupled to one or more of a plurality of support members, and a plurality of inductive couplers in the showerhead, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated bricks, wherein the support member provides a precursor gas to a space formed between the inductive couplers and the perforated bricks.

Description

High density plasma enhanced chemical vapor deposition chamber

Technical Field

Embodiments of the present disclosure generally relate to an apparatus for processing a large area substrate. More particularly, embodiments of the present disclosure relate to chemical vapor deposition systems for device fabrication.

Background

In the manufacture of solar panels and flat panel displays, many processes are utilized to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, and Liquid Crystal Display (LCD) and/or Organic Light Emitting Diode (OLED) substrates to form electronic devices thereon. Deposition is generally accomplished by directing a precursor gas into a vacuum chamber having a substrate disposed on a temperature controlled substrate support. The precursor gas is typically directed through a gas distribution plate positioned near the top of the vacuum chamber. The precursor gas in the vacuum chamber may be energized (e.g., excited) into a plasma by applying Radio Frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead disposed in the chamber. The excited gas reacts to form a layer of material on a surface of a substrate positioned on a temperature controlled substrate support.

The size of the substrates used to form electronic devices is currently routinely in excess of 1 square meter in surface area. Film thickness uniformity across these substrates is difficult to achieve. As the substrate size increases, film thickness uniformity becomes even more difficult. Conventionally, a plasma is formed in a conventional chamber for ionizing gas atoms and forming radicals of a deposition gas, while electrodes for using capacitive coupling are arranged for depositing a film layer on a substrate of such dimensions. Recently, the benefits of inductively coupled plasma arrangements historically utilized for deposition on circular substrates or wafers are exploring for use in the deposition process of these large substrates. However, inductive coupling utilizes dielectric materials as structural support members, and these materials do not have structural strength to withstand structural loads established by atmospheric pressure on one side of the large area structural portion of the chamber on its atmospheric side, and for the presence of vacuum pressure conditions on the other side, which are used for these large substrates in conventional chambers. Thus, inductively coupled plasma systems have experienced development for large area substrate plasma processing. However, process uniformity, such as deposition thickness uniformity across a large substrate, is less than ideal.

Accordingly, there is a need for inductively coupled plasma sources for use with large area substrates configured to improve film thickness uniformity across the deposition surface of the substrate.

Disclosure of Invention

Embodiments of the present disclosure include methods and apparatus for a showerhead, and a plasma deposition chamber having a showerhead, capable of forming one or more films on a large area substrate.

In one embodiment, a showerhead for a plasma deposition chamber is provided comprising a plurality of perforated tiles, each coupled to one or more of a plurality of support members, and a plurality of inductive couplers within the showerhead, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide a precursor gas to a space formed between the inductive coupler and the perforated tile.

In another embodiment, a plasma deposition chamber is provided that includes a showerhead having a plurality of perforated tiles, an inductive coupler corresponding to one or more of the plurality of perforated tiles, and a plurality of support members for supporting each of the perforated tiles, wherein one or more of the support members provide a precursor gas to a space formed between the inductive coupler and the perforated tiles.

In another embodiment, a plasma deposition chamber is provided that includes a showerhead having a plurality of perforated tiles, each coupled to one or more of a plurality of support members, a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated tiles, and a plurality of inductive couplers, wherein one of the plurality of inductive couplers corresponds to one of the plurality of dielectric plates, wherein the support members provide a precursor gas to a space formed between the inductive couplers and the perforated tiles.

In another embodiment, a method for depositing a film on a substrate is disclosed that includes flowing a precursor gas to a plurality of gas spaces of a showerhead, each of the gas spaces including perforated tiles and inductive couplers in electrical communication with the respective gas spaces, and varying the flow of the precursor gas into each of the gas spaces.

Drawings

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

Fig. 1 shows an illustrative processing chamber in a cross-sectional side view, according to one embodiment of the present disclosure.

Fig. 2A is an enlarged view of a portion of the cap assembly of fig. 1.

Fig. 2B is a top plan view of one embodiment of a coil.

FIG. 3A is a bottom plan view of one embodiment of a faceplate of a showerhead.

FIG. 3B is a partial bottom plan view of another embodiment of a faceplate for a showerhead.

Fig. 4 is a schematic bottom plan view showing another embodiment of flow control of a showerhead.

Fig. 5 is a cross-sectional plan view of a support frame for a spray head.

FIG. 6 is a schematic cross-sectional view of one embodiment of an inlet that may be used with the spray heads described herein.

Fig. 7A is a plan view of a perforated tile for use with the sprayhead described herein.

Fig. 7B is a schematic cross-sectional view of one of the openings formed in the perforated tile of fig. 7A.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

Detailed Description

Embodiments of the present disclosure include a processing system operable to deposit multiple layers on a large area substrate. A large area substrate as used herein is a substrate having a major side with a large surface area, such as a substrate having a surface area typically of about 1 square meter or more. However, the substrate is not limited to any particular size or shape. In one aspect, the term "substrate" refers to any polygonal, square, rectangular, curved or non-circular workpiece, such as a glass or polymer substrate, for example, used in the fabrication of flat panel displays.

Here, the showerhead is configured to flow through the gas and into the processing volume of the chamber in a number of independently controlled zones in order to improve uniformity of processing of the surface of the substrate exposed to the gas in the processing zone. Furthermore, each zone is configured with a plenum, one or more perforated plates between the plenum and the processing space of the chamber, and coils or portions of coils dedicated to the zone or individual perforated plates. The air chamber is formed between the dielectric window, the perforated plate and the surrounding structure. Each plenum is configured to allow the process gas to flow to and be distributed by the result of a relatively uniform flow rate, or in some cases a flow rate tailored to the gas, through the perforated plate and into the process space. In some embodiments the chamber has a thickness that is less than twice the thickness of a dark compartment of a plasma formed from the process gas at a pressure within the chamber. In some embodiments, an inductive coupler in the shape of a coil is positioned behind the dielectric window and its inductively coupled energy passes through the dielectric window, plenum and perforated plate to strike and support the plasma in the processing space. Furthermore, in the areas between adjoining perforated plates, additional process gas flows are provided. The flow of process gas in each zone and through the areas between the perforated plates is controlled to result in a uniform or tailored gas flow to achieve the desired process results on the substrate.

Embodiments of the present disclosure include a high density plasma chemical vapor deposition (HDP CVD) processing chamber operable to form one or more layers or films on a substrate. The process chamber as disclosed herein is adapted to transport species of energized precursor gas generated in a plasma. The plasma may be generated by inductively coupling energy into the gas under vacuum. The embodiments disclosed herein may be adapted for use in a chamber of a subsidiary AKT AMERICA of applied materials, inc. of Santa Clara, calif. It should be understood that the embodiments discussed herein may also be implemented in chambers available from other manufacturers.

Fig. 1 shows an illustrative processing chamber 100 in a cross-sectional side view, according to one embodiment of the present disclosure. The example substrate 102 is shown within the chamber body 104. The processing chamber 100 also includes a lid assembly 106 and a susceptor or substrate support assembly 108. The lid assembly 106 is disposed at an upper end of the chamber body 104, and the substrate support assembly 108 is at least partially disposed within the chamber body 104. The substrate support assembly 108 is coupled to a rod 110. The rods 110 are coupled to a driver 112 that moves the substrate support assembly 108 vertically (in the Z direction) within the chamber body 104. The substrate support assembly 108 of the processing chamber 100 is shown in the processing position in fig. 1. However, the substrate support assembly 108 may be lowered in the Z-direction to a position adjacent the transfer port 114. When lowered, lift pins 116 movably disposed in the substrate support assembly 108 contact a bottom 118 of the chamber body 104. When the lift pins 116 contact the bottom 118, the lift pins 116 can no longer move downward with the substrate support assembly 108 and maintain the substrate 102 in a relatively fixed position as the substrate receiving surface 120 of the substrate support assembly 108 moves downward therefrom. Thereafter, an end effector or robot blade (not shown) is inserted into the transfer port 114 and between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 away from the chamber body 104.

The lid assembly 106 may include a backplate 122 disposed on the chamber body 104. The lid assembly 106 also includes a gas distribution assembly or showerhead 124. The showerhead 124 delivers process gas from a gas source to a process region 126 between the showerhead 124 and the substrate 102. The showerhead 124 is also coupled to a cleaning gas source to provide a cleaning gas, such as a fluorine-containing gas, to the processing region 126.

The showerhead 124 also functions as a plasma source 128. For use as a plasma source 128, the showerhead 124 includes one or more inductively coupled plasma generating components, or coils 130. Each of the one or more coils 130 may be a single coil 130, two coils 130, or more than two coils 130, hereinafter described purely as coils 130. Each of the one or more coils 130 is coupled across a power source and ground 133. The sprinkler 124 also includes a faceplate 132 containing a plurality of discrete perforated tiles 134. The power source includes a matching circuit or tuning capability for adjusting the electrical characteristics of the coil 130.

Each of the perforated tiles 134 is supported by a plurality of support members 136. Each of the one or more coils 130 or portions of the one or more coils 130 are positioned on or above a respective dielectric plate 138. An example of the coil 130 disposed above the dielectric plate 138 in the lid assembly 106 is more clearly shown in fig. 2A. A plurality of gas spaces 140 are defined by the surfaces of the dielectric plate 138, perforated tiles 134, and support members 136. Each of the one or more coils 130 is configured to establish an electromagnetic field while energized into a plasma in the processing region 126 below the gas space 140 as the gas flows into the gas space 140 and through the adjoining perforated tiles to the chamber space below it, the process gas from the gas source is provided to each of the gas spaces 140 via the conduits in the support member 136. The volume or flow rate of gas entering and exiting the showerhead is controlled in different regions of the showerhead 124. Zone control of the process gas is provided by a plurality of flow controllers, such as mass flow controllers 142, 143, and 144 illustrated in fig. 1. For example, the flow rate of gas to the surrounding or outer regions of the showerhead 124 is controlled by flow controllers 142, 143, while the flow rate of gas to the central region of the showerhead 124 is controlled by flow controller 144. When chamber cleaning is required, a cleaning gas from a cleaning gas source flows to each of the gas spaces 140, and thus into the processing region 126, wherein the cleaning gas is energized into ions, radicals, or both. The energized cleaning gas flow passes through perforated tiles 134 and into treatment area 126 to clean chamber components.

Fig. 2A is an enlarged view of a portion of the cap assembly 106 of fig. 1. As explained above, the precursor gas is supplied from a gas source to the gas space 140 through the inlet 200 formed by the backing plate 122. Each of the inlets 200 is coupled to a respective conduit 205 formed in the support member 136. Conduit 205 provides precursor gas to gas space 140 at outlet opening 210. Some of the conduits 205 provide gas to two adjacent gas spaces 140 (one of the conduits 205 is shown in phantom in fig. 2A). The gas flowing to the respective gas spaces 140 is more clearly shown in fig. 4.

Conduit 205 includes a flow restrictor 215 to control flow to gas space 140. The size of the restrictor 215 may be varied to control the flow of air therethrough. For example, each of the restrictors 215 includes an orifice of a particular size (e.g., diameter) to control flow. Further, the size of each of the restrictors 215 may be varied as desired to provide larger orifice sizes, or smaller orifice sizes, as desired to control flow therethrough.

As shown in fig. 2A, perforated brick 134 includes a plurality of openings 218 extending therethrough. Each of the openings 218 is aligned (concentric) with an opening 220 formed in a cover plate 222. Each of the plurality of openings 218 and 220 allows gas to flow from the gas space 140 into the processing region 126 at a desired flow rate due to the diameter of the opening 218 extending between the gas space 140 and the cover plate 222. The openings 218 and/or 220, and/or the rows and columns of openings 218 and/or 220, may be differently sized and/or spaced differently so as to average the flow of gas through each of the perforated tiles 134 and each of the cover plates 222. Or the gas flow from each of the openings 218 and/or 220 may be non-uniform depending on the desired gas flow characteristics.

Each of the cover plates 222 includes a mounting portion 225 that surrounds the sides of the perforated tiles 134. Each mounting portion 225 includes a plurality of openings 230 to allow gas to flow from the conduit 205 into the secondary plenum 235 and then into the processing region 126.

The support member 136 is coupled to the backplate 122 by a fastener 240, such as a screw or screw. Each of the support members 136 supports the perforated brick 134 with an interface portion 245 of the overlay 222. Each of the interface portions 245 may be a ledge or shelf, supporting the surrounding portion or edge of the perforated brick 134. The interface portion 245 is fastened to the support member 136 by a fastener 250, such as a screw or a screw. Portions of the interface portion 245 include the secondary air chamber 235. Each of the interface portions 245 also supports the perimeter or edge of the perforated brick 134. One or more seals 265 are used to seal the gas space 140. For example, seal 265 is an elastomeric material such as an O-ring seal or Polytetrafluoroethylene (PTFE) joint seal. One or more seals 265 may be provided between the support member 136 and the perforated brick 134 and the mounting portion 225 of the overlay 222. The overlay 222 may be removed, if necessary, to replace one or more perforated tiles 134.

In addition, each of the support members 136 supports the dielectric plate 138 (shown in fig. 2A) with a shelf 270 extending therefrom. In the showerhead 124/plasma source 128 embodiment, the dielectric plate 138 has a smaller lateral surface area (X-Y plane) than the entire showerhead 124/plasma source 128 surface area. To support the dielectric plate 138, a shelf 270 is utilized. The reduced lateral surface area of the plurality of dielectric plates 138 allows the use of dielectric materials as a physical shield between the plasma and processing region 126 in the vacuum environment and the gas space 140 and the atmosphere in which the adjacent coil 130 is typically positioned without imparting large stresses therein based on supporting the atmospheric pressure load over a large area.

Seal 265 is used to seal space 275 (at or near atmospheric pressure) away from gas space 140 (at sub-atmospheric pressure in the millitorr or less range during processing). The interface member 280 is shown extending from the support member 136 and utilizing fasteners 285 to secure (i.e., push) the dielectric plate 138 against the seal 265 and shelf 270. The seal 265 may also be used to seal the space between the outer perimeter of the perforated brick 134 and the support member 136.

The materials used for the showerhead 124/plasma source 128 are selected based on one or more of electrical characteristics, strength, and chemical stability. The coil 130 is made of a conductive material. The back plate 122 and support members 136 are made of a material capable of supporting the weight and atmospheric pressure load of the supported components, and may comprise metal or other similar materials. The backplate 122 and the support member 136 can be made of a non-magnetic material (e.g., a non-paramagnetic or non-ferromagnetic material), such as an aluminum material. The cover plate 222 is also formed of a non-magnetic material, such as a metallic material, for example aluminum. Perforated brick 134 is made of a ceramic material such as quartz, alumina, or other similar material. The dielectric plate 138 is made of quartz, alumina, or sapphire material.

Fig. 2B is a top plan view of one embodiment of a coil 130 positioned on a dielectric plate 138 established in the lid assembly 106. In one embodiment, the coil 130 configuration shown in FIG. 2B may be used such that the coil configuration of the icons is individually formed on each of the dielectric plates 138 such that each planar coil is connected in series with the adjacently positioned coils 130 in a desired pattern across the showerhead 124. The coil 130 includes a conductor pattern 290 of a rectangular spiral shape. The electrical connection includes an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more coils 130 of the spray head 124 are connected in series and/or parallel.

FIG. 3A is a bottom plan view of one embodiment of a faceplate 132 of the showerhead 124. As described above, the showerhead 124 is configured to include one or more zones, each zone having independently controlled gas flow. For example, panel 132 includes a central region 300A, intermediate regions 300B ₁ and 300B ₂, and outer regions 300C ₁ and 300C ₂.

The showerhead 124 includes a gas distribution manifold 305 to control the flow of gas to each of the central zone 300A, the intermediate zones 300B ₁ and 300B ₂, and the outer zones 300C ₁ and 300C ₂. The flow of gas to the zones is controlled by a plurality of flow controllers 310, shown in fig. 1 as flow controllers 142, 143, and 144. Each of the flow controllers 310 may be a needle valve or a mass flow controller. The flow controller 130 may also include a diaphragm valve to start or stop the flow of gas.

Fig. 3B is a partial bottom plan view of another embodiment of a faceplate 132 of the showerhead 124. In this embodiment, perforated tiles 134 are supported by a cover plate 222. Fasteners 250 are utilized to secure the perforated overlay 222 to the support member 136, which is not shown in this view as it is behind the overlay 222.

Fig. 4 is a schematic bottom plan view showing another embodiment of showerhead 124, illustrating a gas flow injection pattern into gas space 140 formed in showerhead 124. The length 400 and width 405 of the substrate are shown on the sides of the showerhead 124. The precursor flowing to gas space 140 may be provided in a single direction as indicated by arrow 410 or in two directions as indicated by arrow 415. Precursor flow control may be provided by flow controllers 142, 143, and 144 (shown in fig. 1). In addition, gas flow regions such as edge regions 420, corner regions 425, and center regions 430 may be provided by flow controllers 142, 143, and 144 (shown in FIG. 1). The precursor flow rate to each of the gas spaces 140 and/or zones may be adjusted by varying the size of one or a combination of the openings 220, 230, and the flow restrictors 215 (all shown in fig. 2A).

The flow rate to each of the gas spaces 140 may be the same or different. The flow rate to the gas space 140 may be controlled by mass flow controllers 142, 143, and 144 shown in fig. 1. The flow rate to the gas space 140 may additionally be controlled by sizing the flow restrictor 215 as described above. The flow rate to the treatment area 126 may be controlled by the size of the openings 220 in the perforated tiles 134 and the size of the openings 230 in the cover plate 222. As desired, with bi-directional flow or uni-directional flow into the gas space 140 to provide adequate gas flow to the processing region 126.

The method of controlling gas flow includes 1) multiple zone (center/edge/corner/any other zone) control using different flow rates from mass flow controllers 142, 143, and 144; 2) Flow control through different orifice sizes (size of restrictor 215); 3) Flow direction control (single direction or double direction) into gas space 140; and 4) flow control by the size of the openings 220 in the perforated brick 134, the number of openings 220 in the perforated brick 134, and/or the location of the openings 220 in the perforated brick 134. The mass flow rate of the gas provided by the showerhead 124 is improved by about 280% non-uniformity (NU%) (e.g., from 57% non-uniformity (prior art) to about 15% non-uniformity) as described herein.

Fig. 5 is a bottom cross-sectional view of the support frame 500 from the cross-sectional line shown in fig. 1. The support frame 500 is composed of a plurality of support members 136. The support frame 500 in the view of fig. 5 is cut along a section of the catheter 205 to reveal various sizes (orifice sizes) of the occluder 215. In one embodiment, the various orifices of each of the restrictors 215 may be varied or configured based on the desired gas flow characteristics.

In this embodiment, each of the restrictors 215 includes a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515. The diameters of the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 are each different or the same. Each of the diameters may be selected based on the desired flow characteristics for the showerhead 124. In one embodiment, where the first diameter portion 505 has a minimum diameter, where the third diameter portion 515 has a maximum diameter, and the second diameter portion 510 has a diameter between the first diameter portion 505 and the third diameter portion 515. In the illustrated embodiment, the plurality of flow restrictors 215 having the first diameter portion 505 are shown in a central portion of the support frame 500 while the plurality of flow restrictors 215 having the third diameter portion 515 are shown in an outer portion of the support frame 500.

Further, a plurality of restrictors 215 having second diameter portions 510 are shown in the intermediate zone between the central and outer portions. In other embodiments, the position of the restrictor 215 having the first, second and third diameter portions 505, 510, 515 may be reversed in the portion of the support frame 500 as shown in fig. 5. Or the flow restrictor 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515, may be positioned in various portions of the support frame 500 depending on the desired characteristics and by control of the gas space 140. A uniform gas flow across showerhead 124 may be desirable in certain embodiments. However, in other embodiments, the gas flow to each of the gas spaces 140 of the showerhead 124 may be non-uniform. Non-uniform gas flow may be due to certain physical structures and/or geometries of the process chamber 100. For example, it may be desirable to have more gas flow in the portion of the showerhead 124 adjacent to the transfer port 114 (shown in fig. 1) than in other portions of the showerhead 124.

FIG. 6 is a schematic cross-sectional view of one embodiment of an inlet 200 that may be used with the spray head 124 as described herein. The inlet 200 includes a conduit 205 and includes a restrictor 215 as described in fig. 2A. In certain embodiments, the diameter 600 of the outlet opening 210 of the restrictor 215 includes a first dimension 605A of about 1.4 millimeters (mm) to about 1.6 mm. In other embodiments, the diameter 600 of the outlet opening 210 of the restrictor 215 includes a second dimension 605B of about 1.9mm to about 2.1 mm. The diameter 600 of the outlet opening 210 varies across the size (e.g., length/width) of the spray head 124. For example, the restrictor 215 having the first dimension 605A may be utilized in the central zone 300A as described above in fig. 3A. The flow restrictor 215 having the second dimension 605B may be utilized in regions of the showerhead 124 other than the central region 300A as described above in fig. 3A (e.g., the intermediate regions 300B ₁ and 300B ₂, and the outer regions 300C ₁ and 300C ₂). In addition, the flow restrictors 215 may be included in the showerhead 124 in different lengths 610. In certain embodiments, the length 610 includes a first length 615A that may be about 11mm to about 12 mm. In other embodiments, the length 610 of the restrictor 215 includes a second length 615B of about 22mm to about 24 mm. The flow restrictor 215 having a first length 615A may be utilized in the central region 300A as described above in fig. 3A. The flow restrictor 215 having the second length 615B may be utilized in regions of the showerhead 124 other than the central region 300A as described above in fig. 3A (e.g., the intermediate regions 300B ₁ and 300B ₂, and the outer regions 300C ₁ and 300C ₂). The term "about" with respect to "size" and/or "length" as described above is +/-0.01mm.

Fig. 7A and 7B are various views of one embodiment of a perforated brick 134 that may be utilized with the spray head 124 described herein. Fig. 7A is a bottom plan view of the first surface 700 of the perforated brick 134, facing the overlay 222 (shown in fig. 2A). Fig. 7B is a schematic cross-sectional view of one of the openings 218 formed in the perforated brick 134.

Perforated brick 134 includes a body 705 made of a ceramic material, such as alumina (Al ₂O₃). The body 705 includes a first surface 700 and a second surface 710 (shown in fig. 7B) opposite the first surface 700. The first surface 700 and the second surface 710 are substantially parallel. At least the second surface 710 has a flatness of about 0.005 inches or less (engineering tolerances defined in terms of geometric dimensioning and tolerances (GD & T)). The peripheral edge 720 of the body 705 includes a plurality of openings 218 formed between the first surface 700 and the second surface 710.

The first surface 700 includes a recessed surface 715 that interfaces between the first surface 700 and a peripheral edge 720 of the body 705. Recessed surface 715 includes transition region 725. The transition region 725 may be a sharp shoulder or bevel, beginning at the edge of the first surface 700 and extending to the peripheral edge 720 of the body 705. The transition area 725 includes rounded corners 730. The peripheral edge 720 of the body 705 includes square corners 735.

One of the plurality of openings 218 is shown in fig. 7B. The opening 218 includes an inlet aperture or first aperture 740 formed in the second surface 710. The opening 218 also includes an outlet aperture or second aperture 745 formed in the first surface 700. The first hole 740 and the second hole 745 are fluidly connected by the step hole 750. Each of the first hole 740 and the second hole 745 includes a flared sidewall 755. The trumpet-shaped sidewall 755 may include an angle α of about 90 degrees (e.g., about 45 degrees from the plane of surfaces 700 and 710).

The stepped bore 750 includes a first aperture 760 and a second aperture 765. The first aperture 760 includes a diameter 770 and the second aperture 765 includes a diameter 775. Diameter 775 is greater than diameter 770. The flare section 780 is provided between the first aperture 760 and the second aperture 765. The flare section 780 includes an angle α of about 90 degrees. Diameter 770 may be about 0.017 inch to about 0.018 inch.

Embodiments of the present disclosure include methods and apparatus for a showerhead and a plasma deposition chamber having a showerhead capable of forming one or more films on a large area substrate. Plasma uniformity and gas (or precursor) flow are controlled by a combination of the configuration of the individual perforated tiles 134, the coils 130 and/or flow controllers 142, 143, and 144 dedicated to the perforated tiles 134, and the varying size and/or position of the flow restrictors 215.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (11)

1. A plasma deposition chamber, comprising: The chamber body is arranged around the inner space; a substrate support in the interior space; and a showerhead positioned above the substrate support; The spray head comprises: a plurality of supporting members; a plurality of perforated tiles, each coupled to one or more of the plurality of support members; a plurality of dielectric plates spaced apart and positioned above the plurality of perforated tiles; and a plurality of inductive couplers positioned above each of the plurality of dielectric plates, wherein Each of the plurality of support members includes a conduit configured to provide a precursor gas to a space formed between one of the dielectric plates and one of the perforated bricks, Each conduit includes a flow restrictor, The plurality of support members include a first support member and a second support member, The flow restrictor of the conduit in the first support member has a first length, and The flow restrictor of the conduit in the second support member has a second length different from the first length. 2. The chamber of claim 1, wherein The flow restrictor of the conduit in the first support member has a first diameter, and The flow restrictor of the conduit in the second support member has a second diameter different than the first diameter. 3. The chamber of claim 1, wherein each of the plurality of perforated tiles and the plurality of support members comprises an interface portion. 4. The chamber of claim 1 further comprising a cover plate positioned around each of said perforated tiles. 5. The chamber of claim 4, wherein the cover plate includes an opening formed therein. 6. The chamber of claim 5, wherein each perforated tile includes an opening that aligns with the opening formed in the cover plate. 7. The chamber of claim 1, wherein the showerhead is divided into a dispersed gas delivery zone including a central zone, a middle zone adjacent to the central zone, and an outer zone adjacent to the middle zone. 8. A showerhead for a plasma deposition chamber, the showerhead comprising: a plurality of support members, including a first support member and a second support member, each support member including one or more first support surfaces and one or more second support surfaces, wherein the plurality of first support surfaces are disposed separately from the plurality of second support surfaces; A plurality of gas delivery assemblies comprising a plurality of perforated tiles and a plurality of dielectric plates spaced apart and positioned above the plurality of perforated tiles, wherein each of the plurality of gas delivery assemblies comprises: a perforated tile disposed on a first support surface of the plurality of first support surfaces; and a dielectric plate disposed on a second supporting surface of the plurality of second supporting surfaces; wherein a gas space is defined between a surface of said dielectric plate and a surface of said perforated brick; a plurality of conduits, including a first conduit in the first support member and a second conduit in the second support member, each conduit configured to provide a precursor gas to one of the gas spaces of the plurality of gas delivery assemblies, wherein Each of the conduits includes a flow restrictor, The restrictor of the first conduit has a first length, and The restrictor of the second conduit has a second length different from the first length; and A coil is disposed on each of the plurality of gas delivery components in the showerhead. 9. The spray head of claim 8, wherein The flow restrictor of the first conduit in the first support member has a first diameter, and The flow restrictor of the second conduit in the second support member has a second diameter different from the first diameter. 10. The showerhead of claim 8, wherein each of the plurality of perforated tiles and the support member include an interface portion. 11. The showerhead of claim 8, further comprising a cover plate positioned around each of said perforated tiles.