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CN112534557A - High density plasma enhanced chemical vapor deposition chamber - Google Patents

High density plasma enhanced chemical vapor deposition chamber Download PDF

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Publication number
CN112534557A
CN112534557A CN201980050508.3A CN201980050508A CN112534557A CN 112534557 A CN112534557 A CN 112534557A CN 201980050508 A CN201980050508 A CN 201980050508A CN 112534557 A CN112534557 A CN 112534557A
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Prior art keywords
perforated
gas
showerhead
chamber
support
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CN112534557B (en
Inventor
元泰景
李永东
高建德
桑杰伊·D·雅达夫
崔寿永
苏希尔·安瓦尔
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

本公开内容涉及用于沉积腔室的喷头的方法和设备。在一个实施方式中，提供一种用于等离子体沉积腔室的喷头，所述喷头包括：多个穿孔砖，每个穿孔砖耦接于多个支撑构件中的一者或多者；和位于喷头内的多个电感耦合器，其中所述多个电感耦合器中的一个电感耦合器对应于所述多个穿孔砖中的一者，其中这些支撑构件将前驱物气体提供到在这些电感耦合器和这些穿孔砖之间形成的容积。

Figure 201980050508

The present disclosure relates to methods and apparatus for showerheads of deposition chambers. In one embodiment, a showerhead for a plasma deposition chamber is provided, the showerhead comprising: a plurality of perforated bricks, each perforated brick coupled to one or more of a plurality of support members; and located at a plurality of inductive couplers within the showerhead, wherein an inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated bricks, wherein the support members provide precursor gas to the inductive couplers at the inductive couplers The volume created between the utensils and these perforated bricks.

Figure 201980050508

Description

High density plasma enhanced chemical vapor deposition chamber
Background
FIELD
Embodiments of the present disclosure generally relate to an apparatus for processing a large area substrate. More particularly, embodiments of the present disclosure relate to a chemical vapor deposition system for device fabrication.
Description of the Related Art
In the manufacture of solar panels or flat panel displays, a number of processes are employed to deposit thin films on substrates, such as semiconductor substrates, solar panel substrates, and Liquid Crystal Display (LCD) and/or Organic Light Emitting Diode (OLED) substrates, to form electronic devices on the substrates. Deposition is generally accomplished by introducing a precursor gas into a vacuum chamber having a substrate on a temperature controlled substrate support. The precursor gases are generally directed through a gas distribution plate located near the top of the vacuum chamber. Precursor gases in the vacuum chamber may be excited (e.g., activated) into a plasma by applying Radio Frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead disposed in the chamber. The activated gas reacts to form a layer of material on a surface of a substrate positioned on a temperature controlled substrate support.
Today, the size of the substrate used to form the electronic device typically exceeds 1 square meter in surface area. Film thickness uniformity across these substrates is difficult to achieve. As the substrate size increases, film thickness uniformity becomes even more difficult. Conventionally, a plasma is formed in a conventional chamber for ionizing gas atoms and forming radicals of a deposition gas, which is useful for depositing a film layer on a substrate of such dimensions using a capacitively coupled electrode arrangement. Recently, the benefits of inductively coupled plasma arrangements, which have been used in the past for deposition on circular substrates or wafers, are being explored for use in the deposition process of these large substrates. However, inductive coupling utilizes dielectric materials as structural support members, and these materials do not have the structural strength to withstand the structural loads (which occur due to the presence of atmospheric pressure on one side of the atmospheric side of these materials against the large area structural portion of the chamber) and the vacuum pressure conditions on the other side of these materials (as used in conventional chambers for these large substrates). Therefore, inductively coupled plasma systems have been developed for large area substrate plasma processes. However, process uniformity, such as deposition thickness uniformity across a large substrate, is not desirable.
Accordingly, there is a need for an inductively coupled plasma source for use on large area substrates that is configured to improve film thickness uniformity across the substrate deposition surface.
SUMMARY
Embodiments of the present disclosure include methods and apparatus for a showerhead, and a plasma deposition chamber having a showerhead capable of forming one or more layers of films on large area substrates.
In one embodiment, a showerhead for a plasma deposition chamber is provided, the showerhead comprising: a plurality of perforated tiles, each perforated tile coupled to one or more of the plurality of support members; and a plurality of inductive couplers located within the showerhead, wherein an inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles.
In another embodiment, a plasma deposition chamber is provided, comprising: a nozzle having a plurality of perforated tiles; an inductive coupler corresponding to one or more of the plurality of perforated tiles; and a plurality of support members for supporting each of the perforated tiles, wherein one or more of the support members provide a precursor gas to a volume formed between the inductive couplers and the perforated tiles.
In another embodiment, a plasma deposition chamber is provided, comprising: a showerhead having a plurality of perforated tiles, each perforated tile coupled to one or more of the plurality of support members; a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated tiles; and a plurality of inductive couplers, wherein an inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of dielectric plates, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles.
In another embodiment, a method for depositing a film on a substrate is disclosed, the method comprising: flowing a precursor gas to a plurality of gas volumes of a showerhead, each of the gas volumes comprising a perforated tile and an inductive coupler in electrical communication with the respective gas volume; and varying the flow of precursor gas into each of the gas volumes.
Brief description of the drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
Fig. 1 is a cross-sectional side view illustrating an exemplary process chamber according to one embodiment of the present disclosure.
Fig. 2A is an enlarged view of a portion of the cap assembly of fig. 1.
FIG. 2B is a top plan view of one embodiment of a coil.
FIG. 3A is a bottom plan view of one embodiment of a faceplate for the showerhead.
FIG. 3B is a partial bottom plan view of another embodiment of a faceplate for the showerhead.
FIG. 4 is a schematic bottom plan view showing another embodiment of flow control of the showerhead.
FIG. 5 is a cross-sectional plan view of a support frame for the sprinkler head.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
Detailed description of the invention
Embodiments of the present disclosure include a processing system operable to deposit a plurality of layers on a large area substrate. A large area substrate as used herein is a large area substrate such as a substrate having a surface area typically about 1 square meter or more. However, the substrate is not limited to any particular size or shape. In one aspect, the term "substrate" represents any polygonal, square, rectangular, curved, or other non-circular workpiece, such as a glass or polymer substrate used in the manufacture of flat panel displays.
Here, the showerhead is configured to flow gas through the showerhead and into the processing volume of the chamber in several independently controlled zones to improve process uniformity of the substrate surface exposed to the gas in the processing zone. Further, each zone is configured with a gas chamber, one or more perforated plates between the gas chamber and the process volume of the chamber, and a coil or portion of a coil dedicated to a certain zone or a certain individual perforated plate. A gas chamber is formed between the dielectric window, the perforated plate, and the surrounding structure. Each plenum is configured to allow a process gas to flow into the plenum and be distributed to produce a relatively uniform flow rate, or in some cases a customized flow rate, of gas through the perforated plate and into the process volume. The thickness of the gas chamber is preferably less than twice the thickness of the dark space (dark space) of the plasma formed from the process gas within the gas chamber at the pressure of the gas chamber. An inductive coupler, preferably in the shape of a coil, is located behind the dielectric window and inductively couples energy through the dielectric window, the gas chamber, and the perforated plate to strike and support the plasma in the processing volume. Furthermore, additional process gas flow is provided in the area between adjacent perforated plates. The flow of process gas in each zone and through the region between the perforated plates is controlled to produce a uniform or customized gas flow to achieve the desired process results on the substrate.
Embodiments of the present disclosure include a high density plasma chemical vapor deposition (HDP CVD) processing chamber operable to form one or more layers or films on a substrate. A processing chamber as disclosed herein is adapted to deliver excited species of a precursor gas generated in a plasma. The plasma may be generated by inductively coupling energy into the gas under vacuum. Embodiments disclosed herein may be adapted for use in chambers available from AKT corporation, usa, a subsidiary of applied materials, santa clara, california. It should be understood that the embodiments discussed herein may also be practiced in chambers available from other manufacturers.
Fig. 1 is a cross-sectional side view of an illustrative processing chamber 100 according to one embodiment of the present disclosure. An exemplary substrate 102 is shown within a chamber body 104. The processing chamber 100 also includes a lid assembly 106 and a pedestal or substrate support assembly 108. A lid assembly 106 is disposed at an upper end of the chamber body 104 and a substrate support assembly 108 is at least partially disposed within the chamber body 104. The substrate support assembly 108 is coupled to a shaft 110. The shaft 110 is coupled to a drive 112, and the drive 112 moves the substrate support assembly 108 vertically (in the Z-direction). The substrate support assembly 108 of the processing chamber 100 shown in figure 1 is in a processing position. However, the substrate support assembly 108 may be lowered in the Z-direction to a position adjacent to the transfer port 114. When lowered, lift pins 116 movably disposed in the substrate support assembly 108 contact a bottom 118 of the chamber body 104. When the lift pins 116 contact the bottom 118, the lift pins 116 are no longer able to move downward with the substrate support assembly 108, and the lift pins 116 hold the substrate 102 in a fixed position as the substrate receiving surface 120 of the substrate support assembly 108 moves downward from the lift pins 116. An end effector or robot blade (not shown) is then inserted through the transfer port 114 and between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 out of the chamber body 104.
The lid assembly 106 may include a backing plate 122 disposed on the chamber body 104. The lid assembly 106 also includes a gas distribution assembly or showerhead 124. The showerhead 124 delivers process gas from a gas source to a processing region 126 between the showerhead 124 and the substrate 102. The showerhead 124 is also coupled to a cleaning gas source that provides a cleaning gas, such as a fluorine-containing gas, to the processing region 126.
The showerhead 124 also serves as a plasma source 128. To be used as the plasma source 128, the showerhead 124 includes one or more inductively coupled plasma generating components or coils 130. Each of the one or more coils 130 may be a single coil 130, two coils 130, or more than two coils 130 as the coils 130 are briefly described below. Each of the one or more coils 130 is coupled across a power source and ground 133. The spray head 124 also includes a face plate 132, the face plate 132 including a plurality of discrete perforated tiles (tiles) 134. The power supply includes matching circuitry or tuning capabilities for adjusting the electrical characteristics of the coil 130.
Each perforated tile 134 is supported by a plurality of support members 136. Each of the one or more coils 130 or portions of the one or more coils 130 are located on or above a respective dielectric plate 138. An example of the coil 130 disposed above the dielectric plate 138 within the lid assembly 106 is more clearly shown in figure 2A. A plurality of gas volumes 140 are defined by the surfaces of the dielectric plate 138, perforated bricks 134 and support members 136. Each of the one or more coils 130 is configured to generate an electromagnetic field that excites the process gas into a plasma in the processing region 126 below the gas volume 140 as the gas flows through adjacent perforated tiles into the gas volume 140 and into the chamber volume below the gas volume 140, the process gas from the gas source being provided to each gas volume 140 through conduits in the support member 136. The volume or flow rate of gas entering and exiting the showerhead is controlled in different zones of the showerhead 124. Zone control of the process gases is provided by a plurality of flow controllers, such as mass flow controllers 142, 143, and 144 illustrated in fig. 1. For example, the flow rate of gas to the peripheral or outer regions of the showerhead 124 is controlled by flow controllers 142, 143, while the flow rate of gas to the central region of the showerhead 124 is controlled by flow controller 144. When it is desired to clean the chamber, a cleaning gas from a cleaning gas source flows to each gas volume 140 and from there into the processing volume where it is excited into ions, radicals, or both ions and radicals. To clean the chamber components, the energized cleaning gas flows through the perforated tiles 134 and into the processing region 126.
Fig. 2A is an enlarged view of a portion of the cap assembly 106 of fig. 1. As described above, the precursor gases are passed from the gas source to the gas volume 140 through the first conduit 200 formed through the backing plate 122. Each first conduit 200 is coupled to a second conduit 205 formed in the support member 136. The second conduit 205 provides the precursor gas to the gas volume 140 at the opening 210. Some of the second conduits 205 provide gas to two adjacent gas volumes 140 (one of the second conduits 205 is shown in phantom in fig. 2A). Fig. 4 more clearly illustrates the flow of gas into the representative gas volume 140. The second conduit 205 may include a flow restrictor (flow restrictor)215 to control the flow to the gas volume 140. The size of the restrictor 215 may be varied in order to control the flow of gas through the restrictor 215. For example, each restrictor 215 includes an orifice of a particular size (e.g., diameter) for controlling flow. Further, each restrictor 215 may be varied as desired to provide a larger orifice size or a smaller orifice size as desired to control the flow through the restrictor.
As shown in fig. 2A, the perforated tile 134 includes a plurality of openings 220 extending through the perforated tile 134. Since the diameter of the opening 220 extends between the gas volume 140 and the processing region 126, each of the plurality of openings 220 allows gas to flow from the gas volume 140 into the processing region 126 at a desired flow rate. To equalize the airflow through each opening 220 in one or more perforated tiles 134, the openings 220 and/or the rows and columns of openings 220 may be differently sized and/or differently spaced. Alternatively, the gas flow from each opening 220 may be non-uniform, depending on the desired gas flow characteristics.
In addition to perforated tiles 134, panel 132 also includes a plurality of perforated strips (strip)225, perforated strips 225 extending along the sides of perforated tiles 134. Each of the plurality of perforated strips 225 includes a plurality of openings 230, the openings 230 allowing gas to flow from the second conduit 205 into the second gas chamber 235 and then into the processing region 126 to excite the gas into a plasma.
The support member 136 is coupled to the back plate 122 by a fastener 240, such as a bolt or screw. Each support member 136 supports perforated tile 134 with an interface portion 245. Each interface portion 245 may be a ledge or shelf that supports a portion or edge of the perimeter of perforated tile 134. In some embodiments, interface portion 245 includes a removable strip 250. The removable strap 250 is fastened to the support member 136 by fasteners (not shown), such as bolts or screws. A portion of interface portion 245 is L-shaped and another portion of interface portion 245 is T-shaped. Each interface portion 245 also supports a perimeter or edge of the perforated strip 225. The gas volume 140 is sealed with one or more seals 265. For example, the seal 265 is an elastomeric material, such as an O-ring seal or a Polytetrafluoroethylene (PTFE) joint sealant material. One or more seals 265 may be disposed between the support member 136 and the perforated tile 134 and perforated strip 225. The removable strip 250 is used to support one or both of the perforated strip 225 and the perforated tile 134 on the support member 136. The removable strip 250 may be removed as needed to replace one or both of the perforated strip 225 and the perforated tile 134.
In addition, each support member 136 supports the dielectric plate 138 with spacers 270 (shown in figure 2A) extending therefrom. In embodiments of the showerhead 124/plasma source 128, the dielectric plate 138 has a smaller lateral surface area (XY plane) than the entire showerhead 124/plasma source 128. Spacers 270 are utilized to support the dielectric plate 138. The reduced lateral surface area of the plurality of dielectric plates 138 allows the use of dielectric materials as a physical barrier between the plasma and processing region 126 in the vacuum environment and gas volume 140 and the atmospheric environment in which adjacent coils 130 are typically disposed, without imposing large stresses in the dielectric materials due to the large area supporting atmospheric pressure loads.
The seal 265 is used to seal the volume 275 (at or near atmospheric pressure) from the gas volume 140 (at sub-atmospheric pressures in the millitorr range or less during processing). The interface member 280 is shown extending from the support member 136 and using fasteners 285 to secure (i.e., push) the dielectric plate 138 relative to the seal 265 and the spacer 270. A seal 265 may also be used to seal the space between the outer perimeter of the perforated plate 134 and the support member 136.
The materials for the showerhead 124/plasma source 128 are selected based on one or more of electrical properties, strength, and chemical stability. The coil 130 is made of a conductive material. The backing plate 122 and support members 136 are made of a material capable of supporting the weight and atmospheric pressure loading of the supported components, which may include metal or other similar materials. The backplate 122 and the support members 136 may be made of a non-magnetic material (e.g., a non-paramagnetic or non-ferromagnetic material), such as an aluminum material. Removable strip 250 is also formed of a non-magnetic material, such as a metallic material, e.g., aluminum, or a ceramic material, e.g., aluminum oxide (Al)2O3) Or sapphire (Al)2O3)). The perforated strip 225 and the perforated tiles 134 are made of a ceramic material, such as quartz, alumina or other similar material. The dielectric plate 138 is made of quartz, alumina or sapphire material.
In some embodiments, the support member 136 includes one or more coolant channels 255 in the support member 136. The one or more coolant channels 255 are fluidly coupled to a fluid source 260, the fluid source 260 being configured to provide a coolant medium to the coolant channels 255.
Figure 2B is a top view of one embodiment of the coil 130 on the dielectric plate 138 in the lid assembly 106. In one embodiment, the illustrated coil configuration may be separately formed above each dielectric plate 138 using the coil 130 configuration shown in fig. 2B, such that each planar coil is connected in series with an adjacently positioned coil 130 in a desired pattern across the showerhead 124. The coil 130 includes a rectangular spiral conductor pattern 290. The electrical connection includes an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more coils 130 of the showerhead 124 is connected in series and/or parallel.
FIG. 3A is a bottom plan view of one embodiment of the faceplate 132 of the showerhead 124. As described above, the showerhead 124 is configured to include one or more zones, each zone having an independently controlled flow of gas to the zone. For example, the panel 132 includes a central region 300A, a middle region 300B, and one or more outer regions 300C and 300D. The flow of gas to the zones is controlled by flow controllers 142, 143 and 144 (shown in FIG. 1).
FIG. 3B is a partial bottom plan view of another embodiment of the faceplate 132 of the showerhead 124. In this embodiment, the perforated tiles 134 are supported by a perforated strip 225. The perforated strip 225 and the removable strip 250 are secured to the support member 136 with fasteners 305, and the support member 136 is not shown in this view because the support member 136 is behind the perforated strip 225 and the removable strip 250.
Fig. 4 is a schematic bottom plan view illustrating another embodiment of the showerhead 124, illustrating a gas flow injection pattern into the gas volume 140 formed within the showerhead 124. The length 400 and width 405 of the substrate are shown on the sides of the showerhead 124. The precursor flow may be provided to the gas volume 140 unidirectionally as indicated by arrow 410 or bidirectionally as indicated by arrow 415. Precursor flow control may be provided by flow controllers 142, 143, and 144 (shown in fig. 1). Further, flow zones, such as edge zone 420, corner zone 425, and center zone 430, may be provided by flow controllers 142, 143, and 144 (shown in fig. 1). The flow rate of precursor to each gas volume 140 and/or zone may be adjusted by varying the size of one or a combination of the openings 220, 230, and flow restrictors 215 (all shown in fig. 2A).
The flow rate to each gas volume 140 may be the same or different. The flow rate to the gas volume 140 can be controlled by the mass flow controllers 142, 143, and 144 shown in fig. 1. As described above, the flow rate to the gas volume 140 may be additionally controlled by the sizing of the flow restrictor 215. The flow rate to the processing region 126 can be controlled by the size of the openings 220 in the perforated tiles 134 and the size of the openings 230 in the perforated strip 225. Bi-directional flow or unidirectional flow into the gas volume 140 may be used as desired to provide sufficient gas flow to the processing region 126.
A method of controlling a gas flow comprising: 1) multi-zone (center/edge/corner/any other zone) control using different flow rates from mass flow controllers 142, 143, and 144; 2) flow control through different orifice sizes (the size of the restrictor 215); 3) flow direction control into the gas volume 140 (unidirectional or bidirectional); and 4) flow control by the size of the openings 220 in the perforated tile 134, the number of openings 220 in the perforated tile 134, and/or the location of the openings 220 in the perforated tile 134.
Fig. 5 is a bottom cross-sectional view of the support frame 500 as viewed from the section line shown in fig. 1. The support frame 500 is composed of a plurality of support members 136. The support frame 500 in the view of fig. 5 is cut along a section of the second conduit 205 showing various diameters (hole sizes) of the flow restrictor 215. In one embodiment, the various apertures of each flow restrictor 215 may be varied or configured based on desired gas flow characteristics.
In this embodiment, each occluder 215 comprises a first diameter portion 505, a second diameter portion 510 and a third diameter portion 515. Each of the diameters of the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 are different or the same. Each diameter may be selected based on the desired flow characteristics of the spray head 124. In one embodiment, here the first diameter portion 505 has a smallest diameter, here the third diameter portion 515 has a largest diameter, and the second diameter portion 510 has a diameter between the first diameter portion 505 and the third diameter portion 515. In the illustrated embodiment, a plurality of occluders 215 having a first diameter portion 505 are shown in a central portion of the support frame 500, while a plurality of occluders 215 having a third diameter portion 515 are shown in an outer portion of the support frame 500.
Further, a plurality of flow restrictors 215 having second diameter portions 510 are shown in the middle region between the center portion and the outer portions. In other embodiments, the position of the occluder 215 having a first diameter portion 505, a second diameter portion 510 and a third diameter portion 515 may be reversed in the portion of the support frame 500 shown in fig. 5. Alternatively, a flow restrictor 215 having a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515 may be placed in various portions of the support frame 500 according to the desired characteristics and control through the gas volume 140. In some embodiments, a uniform airflow across the showerhead 124 may be desired. However, in other embodiments, the gas flow to each gas volume 140 of the showerhead 124 may be non-uniform. The non-uniform gas flow may be due to certain physical structures and/or geometries of the processing chamber 100. For example, it may be desirable to have more airflow in the portion of the showerhead 124 adjacent the delivery port 114 (shown in FIG. 1) than in other portions of the showerhead 124.
Embodiments of the present disclosure include methods and apparatus for a showerhead and a plasma deposition chamber having a showerhead capable of forming one or more layers of film on a large area substrate. Plasma uniformity and gas (or precursor) flow may be controlled by a combination of individual perforated tiles 134, coils 130 dedicated to particular ones of the perforated tiles 134, and/or configurations of flow controllers 142, 143, and 144, and plasma uniformity and gas (or precursor) flow may be controlled by varying the size and/or position of the flow restrictors 215.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (15)

1.一种等离子体沉积腔室，包括：1. A plasma deposition chamber, comprising: 喷头，具有多个穿孔砖，每个穿孔砖耦接于多个支撑构件中的一者或多者；a showerhead having a plurality of perforated bricks, each of which is coupled to one or more of the plurality of support members; 多个介电板，这些介电板中的一者对应于这些穿孔砖中的一者；和a plurality of dielectric sheets, one of the dielectric sheets corresponding to one of the perforated bricks; and 多个电感耦合器，其中所述多个电感耦合器中的一个电感耦合器对应于所述多个介电板中的一者，其中这些支撑构件将前驱物气体提供到在这些电感耦合器与这些穿孔砖之间形成的容积。A plurality of inductive couplers, wherein an inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of dielectric plates, wherein the support members provide precursor gas to the inductive couplers and the inductive couplers The volume formed between these perforated bricks. 2.如权利要求1所述的腔室，其中所述多个支撑构件的每一者包括形成在所述支撑构件中的导管，用于使所述前驱物气体流动。2. The chamber of claim 1, wherein each of the plurality of support members includes a conduit formed in the support member for flowing the precursor gas. 3.如权利要求1所述的腔室，其中所述多个支撑构件的每一者包括形成在所述支撑构件中的冷却剂通道，用于使冷却剂流动。3. The chamber of claim 1, wherein each of the plurality of support members includes a coolant channel formed in the support member for flow of coolant. 4.如权利要求1所述的腔室，进一步包括与这些电感耦合器的每一者相关联的介电板，所述介电板界定所述容积的一侧。4. The chamber of claim 1, further comprising a dielectric plate associated with each of the inductive couplers, the dielectric plate defining one side of the volume. 5.如权利要求1所述的腔室，其中所述多个穿孔砖和所述多个支撑构件的每一者包括界面部分。5. The chamber of claim 1, wherein each of the plurality of perforated tiles and the plurality of support members includes an interface portion. 6.如权利要求5所述的腔室，其中每个界面部分包括可移除条带。6. The chamber of claim 5, wherein each interface portion includes a removable strip. 7.如权利要求1所述的腔室，其中所述多个穿孔砖的一部分由穿孔条带分隔。7. The chamber of claim 1, wherein a portion of the plurality of perforated tiles are separated by perforated strips. 8.如权利要求7所述的腔室，其中每个穿孔条带通过界面部分耦接到所述多个支撑构件的支撑构件。8. The chamber of claim 7, wherein each perforated strip is coupled to a support member of the plurality of support members through an interface portion. 9.如权利要求8所述的腔室，其中每个界面部分包括可移除条带。9. The chamber of claim 8, wherein each interface portion includes a removable strip. 10.一种用于等离子体沉积腔室的喷头，所述喷头包括：10. A showerhead for a plasma deposition chamber, the showerhead comprising: 支撑构件，包括多个第一支撑表面和多个第二支撑表面，其中所述多个第一支撑表面设置成在第一方向中与所述多个第二支撑表面相距第一距离；a support member including a plurality of first support surfaces and a plurality of second support surfaces, wherein the plurality of first support surfaces are disposed a first distance from the plurality of second support surfaces in a first direction; 多个气体输送组件，包括多个穿孔砖和多个介电板，其中所述多个气体输送组件的每一者包括：A plurality of gas delivery assemblies, including a plurality of perforated bricks and a plurality of dielectric sheets, wherein each of the plurality of gas delivery assemblies comprises: 穿孔砖，设置在所述多个第一支撑表面中的第一支撑表面上；和a perforated tile disposed on a first support surface of the plurality of first support surfaces; and 介电板，设置在所述多个第二支撑表面中的第二支撑表面上，a dielectric plate disposed on a second support surface of the plurality of second support surfaces, 其中，在所述介电板的表面与所述穿孔砖的表面之间限定气体容积；wherein a gas volume is defined between the surface of the dielectric plate and the surface of the perforated brick; 多个气体输送口，其中每个气体输送口配置成将气体输送到所述多个气体输送组件的气体容积；和a plurality of gas delivery ports, wherein each gas delivery port is configured to deliver gas to a gas volume of the plurality of gas delivery assemblies; and 线圈，设置在所述喷头内的所述多个气体输送组件中的一者或多者上方。a coil disposed over one or more of the plurality of gas delivery assemblies within the showerhead. 11.如权利要求10所述的喷头，其中所述支撑构件包括形成在所述支撑构件中的导管，用于使所述前驱物气体流动。11. The showerhead of claim 10, wherein the support member includes a conduit formed in the support member for flowing the precursor gas. 12.如权利要求10所述的喷头，其中所述支撑构件包括形成在所述支撑构件中的冷却剂通道，用于使冷却剂流动。12. The showerhead of claim 10, wherein the support member includes coolant passages formed in the support member for flow of coolant. 13.如权利要求10所述的喷头，所述介电板界定所述气体容积的一侧。13. The showerhead of claim 10, the dielectric plate defining one side of the gas volume. 14.如权利要求10所述的喷头，其中所述多个穿孔砖和所述支撑构件的每一者包括界面部分。14. The showerhead of claim 10, wherein each of the plurality of perforated tiles and the support member includes an interface portion. 15.如权利要求14所述的喷头，其中每个界面部分包括可移除条带，并且其中所述多个穿孔砖的一部分由穿孔条带分隔。15. The showerhead of claim 14, wherein each interface portion includes a removable strip, and wherein a portion of the plurality of perforated tiles is separated by a perforated strip.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114787415A (en) * 2019-12-17 2022-07-22 应用材料公司 High density plasma enhanced chemical vapor deposition chamber

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582693B (en) * 2020-11-30 2025-03-11 中微半导体设备(上海)股份有限公司 Plasma processing device, end effector, edge ring and method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030075273A1 (en) * 2001-08-15 2003-04-24 Olli Kilpela Atomic layer deposition reactor
KR20130092812A (en) * 2012-02-13 2013-08-21 주식회사 케이씨텍 Atomic layer deposition apparatus for generating uniform plasma
CN103843465A (en) * 2011-10-13 2014-06-04 韩国科学技术院 Plasma device and substrate processing device
US20160197204A1 (en) * 2015-01-05 2016-07-07 Lg Electronics Inc. Solar cell and method for manufacturing the same
JP2016225018A (en) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 Gas processing device and multi-division shower head used for the same
JP2017147204A (en) * 2016-02-19 2017-08-24 東京エレクトロン株式会社 Plasma processing apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP3609985B2 (en) * 1999-05-13 2005-01-12 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
JP5013393B2 (en) * 2005-03-30 2012-08-29 東京エレクトロン株式会社 Plasma processing apparatus and method
KR101095172B1 (en) * 2009-10-01 2011-12-16 주식회사 디엠에스 Side gas injector in the plasma reaction chamber
US8551248B2 (en) 2010-04-19 2013-10-08 Texas Instruments Incorporated Showerhead for CVD depositions
KR101765754B1 (en) * 2010-05-12 2017-08-09 주식회사 탑 엔지니어링 Shower head and device for manufacturing a semiconductor substrate having the same
JP5591585B2 (en) * 2010-05-17 2014-09-17 東京エレクトロン株式会社 Plasma processing equipment
JP5992288B2 (en) * 2012-10-15 2016-09-14 東京エレクトロン株式会社 Gas introduction apparatus and inductively coupled plasma processing apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030075273A1 (en) * 2001-08-15 2003-04-24 Olli Kilpela Atomic layer deposition reactor
CN103843465A (en) * 2011-10-13 2014-06-04 韩国科学技术院 Plasma device and substrate processing device
KR20130092812A (en) * 2012-02-13 2013-08-21 주식회사 케이씨텍 Atomic layer deposition apparatus for generating uniform plasma
US20160197204A1 (en) * 2015-01-05 2016-07-07 Lg Electronics Inc. Solar cell and method for manufacturing the same
JP2016225018A (en) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 Gas processing device and multi-division shower head used for the same
JP2017147204A (en) * 2016-02-19 2017-08-24 東京エレクトロン株式会社 Plasma processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114787415A (en) * 2019-12-17 2022-07-22 应用材料公司 High density plasma enhanced chemical vapor deposition chamber
CN114787415B (en) * 2019-12-17 2024-09-13 应用材料公司 High density plasma enhanced chemical vapor deposition chamber

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