CN114770366B - Static pressure plate of silicon wafer double-sided grinding device and silicon wafer double-sided grinding device - Google Patents
Static pressure plate of silicon wafer double-sided grinding device and silicon wafer double-sided grinding device Download PDFInfo
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- CN114770366B CN114770366B CN202210542408.6A CN202210542408A CN114770366B CN 114770366 B CN114770366 B CN 114770366B CN 202210542408 A CN202210542408 A CN 202210542408A CN 114770366 B CN114770366 B CN 114770366B
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- silicon wafer
- insert
- plate body
- plate
- hydrostatic
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The embodiment of the invention discloses a static pressure plate of a silicon wafer double-sided grinding device and the silicon wafer double-sided grinding device, wherein the static pressure plate comprises: a plate body formed with a through-hole for allowing a fluid to flow through the plate body under pressure between a silicon wafer and the plate body so that the silicon wafer can be supported for grinding by hydrostatic pressure; an insert embedded in the plate body, the insert penetrating the plate body and being made of a porous material such that the fluid also seeps through the insert under pressure, and the insert protruding from the plate body in a seepage direction such that the silicon wafer is only in contact with the insert when pressed against the stationary platen.
Description
Technical Field
The invention relates to the field of semiconductor silicon wafer production, in particular to a static pressure plate of a silicon wafer double-sided grinding device and the silicon wafer double-sided grinding device.
Background
The production process of semiconductor silicon wafers generally includes crystal pulling, wire cutting, grinding, polishing, and the like. Wherein for a double-sided lapping process, a silicon wafer is sandwiched between two hydrostatic plates so that the wafer can be supported by the hydrostatic pressure of the fluid between each hydrostatic plate and the wafer without contacting the two hydrostatic plates, and after the wafer is supported, the two major surfaces of the wafer can be lapped with opposing grinding wheels.
For the above-mentioned grinding process, it is generally required to press the silicon wafer against the static pressure plate, for example, when the silicon wafer needs to be taken out from the grinding device after the silicon wafer is ground, the taking-out device with the suction cup needs to apply a certain force to the silicon wafer suction cup to complete the adsorption of the silicon wafer, at this time, the reaction force of the silicon wafer needs to be provided by the static pressure plate, for the taking-out device utilizing the vacuum adsorption effect, the adsorption effect generated by the vacuum adsorption through hole of the static pressure plate is required to enable the silicon wafer to be adsorbed on the static pressure plate, after the taking-out device also completes the adsorption of the silicon wafer, the adsorption effect of the static pressure plate can be released, and then the taking-out device can take out the silicon wafer.
However, during the grinding process of the silicon wafer, contaminants such as silicon slag adhere to the static pressure plate, and in this case, the silicon wafer pressed against the static pressure plate is damaged by scratches, pollution and the like, which has a great adverse effect on the quality of the ground silicon wafer and the subsequent treatment process.
Disclosure of Invention
In order to solve the technical problems, the embodiment of the invention is expected to provide the static pressure plate of the silicon wafer double-sided grinding device and the silicon wafer double-sided grinding device, which can prevent the silicon wafer from being damaged even if the silicon wafer is pressed against the static pressure plate due to the process requirement, thereby greatly improving the quality of the silicon wafer after the grinding is finished and being beneficial to the implementation of the subsequent treatment process.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a hydrostatic plate of a dual-sided grinding apparatus for silicon wafers, where the hydrostatic plate includes:
a plate body formed with a through-hole for allowing a fluid to flow through the plate body under pressure between a silicon wafer and the plate body so that the silicon wafer can be supported for grinding by hydrostatic pressure;
an insert embedded in the plate body, the insert penetrating the plate body and being made of a porous material such that the fluid also seeps through the insert under pressure, and the insert protruding from the plate body in a seepage direction such that the silicon wafer is only in contact with the insert when pressed against the stationary platen.
In a second aspect, an embodiment of the present invention provides a dual-sided silicon wafer polishing apparatus, where the dual-sided silicon wafer polishing apparatus includes two hydrostatic plates, the two hydrostatic plates are used to provide hydrostatic pressure to a silicon wafer on different sides of the silicon wafer, where at least one of the two hydrostatic plates is a hydrostatic plate according to the first aspect.
The embodiment of the invention provides a static plate of a silicon wafer double-sided grinding device and the silicon wafer double-sided grinding device, even if pollutants such as silicon slag are attached to the static plate in the grinding process of the silicon wafer, as fluid for generating fluid cleaning pressure can permeate through an embedded part, the pollutants attached to the embedded part can be separated or removed from the embedded part by the permeate fluid scouring, or the embedded part can realize self-cleaning through the fluid, and when the silicon wafer is pressed against the static plate, the silicon wafer is not damaged by the pollutants possibly attached to the plate body due to contact with the clean embedded part, so that the quality of the ground silicon wafer and the implementation of subsequent treatment process can be improved.
Drawings
FIG. 1 illustrates a schematic side view of a stationary platen according to an embodiment of the present invention in connection with an implementation of supporting a silicon wafer by hydrostatic pressure;
FIG. 2 is a schematic front view of a stationary platen according to an embodiment of the present invention;
FIG. 3 is a schematic front view of a stationary platen according to another embodiment of the present invention;
fig. 4 is a schematic structural view of a double-sided silicon wafer polishing apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a hydrostatic plate 10 of a double-sided silicon wafer polishing apparatus, in which the hydrostatic plate 10 is used to provide hydrostatic pressure to a silicon wafer W, that is, to enable the silicon wafer W to be supported for polishing without any fixed contact, and in particular, the hydrostatic plate 10 may include:
a plate body 11, the plate body 11 being formed with through holes 11A as schematically shown in fig. 1 by broken lines inside the plate body 11, and three through holes 11A being exemplarily shown in fig. 1, the through holes 11A for flowing a fluid F under pressure through the plate body 11 between a silicon wafer W and the plate body 11 as schematically shown in fig. 1 by straight-line arrows at the through holes 11A, so that the silicon wafer W can be supported for grinding by hydrostatic pressure, in fact in a double-sided grinding apparatus, different sides of the silicon wafer W are provided with hydrostatic pressure, as shown in fig. 1, a hydrostatic plate 10 according to an embodiment of the present invention and another hydrostatic plate 20 are provided on different sides of the silicon wafer W, respectively, and collectively provide the hydrostatic pressure to the silicon wafer W;
an insert 12 embedded in the plate 11, the insert 12 penetrating the plate 11 and being made of a porous material such that the fluid F also seeps through the insert 12 under pressure, as schematically shown by the curved arrow at the insert 12 in fig. 1, and the insert 12 protruding from the plate 11 along the seepage direction, as schematically shown by the spot-filled area in fig. 1, such that when the silicon wafer W is pressed against the stationary plate 10, as shown for example in fig. 1, the silicon wafer W moves in the direction of the hollow arrow from the position shown by the solid line to the position shown by the broken line, only in contact with the insert 12 and not with the plate 11.
Thus, even though contaminants such as silicon slag adhere to the static pressure plate 10 during grinding of the silicon wafer W, since the fluid F for generating fluid pressure is permeated through the insert 12, the contaminants adhering to the insert 12 are also separated or removed from the insert 12 by being flushed by the permeated fluid, or the insert 12 can be "self-cleaned" by the fluid F, and when the silicon wafer W is pressed against the static pressure plate 10, the silicon wafer W is not damaged by contaminants such as may adhere to the plate 11 because it is only in contact with the cleaned insert 12 but not in contact with the plate 11, which is advantageous for improving the quality of the finished ground silicon wafer W and the performance of the subsequent processing process.
The height of the insert 12 protruding from the plate 11 is not good for generation of hydrostatic pressure if it is too large, and if it is too small, it is possible that the wafer W contacts the plate 11 due to deformation of the wafer W, and damage of the wafer W by contaminants attached to the plate 11 is unavoidable. In this regard, in a preferred embodiment of the present invention, the height of the protrusions of the insert 12 may be 1mm to 2mm so as not only to be able to not affect the generation of hydrostatic pressure but also to be sufficient to avoid the silicon wafer W from contacting the plate 11.
Since the wafer W is pressed against the hydrostatic plate 10, and more specifically against the insert 12 as described above, the wafer W may be damaged by the greater pressure if the insert 12 has a higher hardness, although the insert 12 does not adhere to contaminants. In this regard, in a preferred embodiment of the present invention, the insert 12 may be made of a soft material in order to further avoid damage to the wafer W, such that the wafer W is prevented from being damaged due to the high hardness of the insert 12 when pressed against the insert 12.
For the material of the insert 12 that can be used as a porous material and has soft characteristics, the insert 12 may be made of foamed polyurethane.
When the wafer W is to be removed from between the two static plates 10 and 20 as shown in fig. 1 by vacuum adsorption, the static plate 10 or 20 is first required to adsorb the wafer W on the static plate by adsorption by the vacuum adsorption through holes formed therein, and after the withdrawing means also completes adsorption of the wafer W, the adsorption of the adsorption-generating static plate can be released, and the above-mentioned wafer W is pressed against the static plate just due to adsorption of the wafer W by the static plate. In this regard, the silicon wafer W may be adsorbed by the stationary platen 10 according to an embodiment of the present invention to avoid damage by contaminants. In addition, referring to fig. 2, the insert 12 may have a ring shape, and two through holes 11A, which are exemplarily shown, are located inside the insert 12 or surrounded by the insert 12, and the through holes 11A are further used to generate a negative pressure in a space surrounded by the insert 12 by vacuum suction, so that the silicon wafer W, which is not shown in fig. 2, is pressed against the hydrostatic plate 10 by the negative pressure. In which the plate 11 is shown in fig. 2 as being crescent shaped overall, in order to locate the grinding wheel at a circular indentation in a double-sided grinding device for silicon wafers, as will be described in more detail below.
It will be readily appreciated that contaminants such as silicon slag will adhere to the wafer W itself after it has been ground, and such contaminants will also cause damage to the wafer W as it is pressed against the stationary platen 10 and more particularly against the insert 12. In the preferred embodiment of the present invention, the static pressure plate 10 may further comprise a cleaning nozzle 13 provided on the plate body 11, wherein two cleaning nozzles 13 are exemplarily shown in fig. 3, and the cleaning nozzle 13 is used to spray a cleaning liquid toward the silicon wafer W to clean the silicon wafer W. In this way, the wafer W can be cleaned before it is pressed against the insert 12, thereby avoiding damage caused by contaminants adhering to the wafer W.
Preferably, still referring to fig. 3, the static pressure plate 10 may further include distance sensors 14 provided on the plate body 11, wherein three distance sensors 14 are exemplarily shown in fig. 3, and the distance sensors 14 are used to sense a distance between the cleaning showerhead 13 and the silicon wafer W. In this way, in the case where the shower head 13 sprays the cleaning liquid, for example, in a scattering manner, the wafer W can be brought to a desired position with respect to the shower head 13, so that cleaning of the wafer W can be achieved in a more efficient manner.
Referring to fig. 4, an embodiment of the present invention also provides a double-sided silicon wafer grinding apparatus 1, and the double-sided silicon wafer grinding apparatus 1 may include a stationary platen 10 according to embodiments of the present invention and another stationary platen 20, and the two stationary platens 10 may be disposed at both sides of a silicon wafer W to provide hydrostatic pressure to the silicon wafer W at different sides thereof, as schematically illustrated by lateral arrows in fig. 4.
Referring to fig. 4, the double-sided silicon wafer grinding apparatus 1 may further include an annular carrier 30 disposed between the two hydrostatic plates 10, 20, the annular carrier 30 being for supporting the silicon wafer W in such a manner as to surround the periphery of the silicon wafer W, the annular carrier 30 being rotatable about its longitudinal axis to rotate the supported silicon wafer W, whereby the overall grinding of both main surfaces of the silicon wafer W can still be achieved in the case where the effective grinding area of the grinding face of the grinding member of the double-sided silicon wafer grinding apparatus 1 is smaller than the area of the main surfaces of the silicon wafer W.
Referring to fig. 4, the wafer double-sided lapping apparatus 1 may further include a pair of grinding wheels 40, the pair of grinding wheels 40 lapping both main surfaces of the wafer W carried by the endless carrier 30 and supported by the hydrostatic pressure by rotating about a common rotation axis. As can be appreciated in connection with fig. 2 or 3, the grinding wheel 40 may retract into the circular indentation of the plate 11 when the wafer W is not being ground.
It should be noted that: the technical schemes described in the embodiments of the present invention may be arbitrarily combined without any collision.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. The utility model provides a quiet pressure plate of two-sided grinder of silicon chip, its characterized in that, quiet pressure plate includes:
a plate body formed with a through-hole for allowing a fluid to flow through the plate body under pressure between a silicon wafer and the plate body so that the silicon wafer can be supported for grinding by hydrostatic pressure;
an insert embedded in the plate body, the insert penetrating the plate body and being made of a porous material such that the fluid also seeps through the insert under pressure, and the insert protruding from the plate body in a seepage direction such that the silicon wafer is only in contact with the insert when pressed against the stationary platen.
2. The stationary platen of claim 1, wherein the insert protrusion has a height of 1mm to 2mm.
3. The stationary platen of claim 1, wherein the insert is made of a soft material.
4. A stationary platen according to any one of claims 1 to 3, characterized in that the insert is made of foamed polyurethane.
5. A stationary platen according to any one of claims 1 to 3, characterized in that the insert is ring-shaped, the through-hole being located inside the insert and further adapted to create a negative pressure in the space enclosed by the insert by vacuum suction, such that the silicon wafer is pressed against the stationary platen under the effect of the negative pressure.
6. A stationary platen according to any one of claims 1 to 3, further comprising a cleaning shower head provided on the platen body for spraying a cleaning liquid toward the silicon wafer to clean the silicon wafer.
7. The stationary platen of claim 6, further comprising a distance sensor disposed on the plate body for sensing a distance between the cleaning showerhead and the silicon wafer.
8. A double-sided grinding device of a silicon wafer, characterized in that it comprises two hydrostatic plates for providing hydrostatic pressure to the silicon wafer on different sides of the silicon wafer, wherein at least one of the two hydrostatic plates is a hydrostatic plate according to any one of claims 1 to 7.
9. The double-sided lapping device of claim 8, further comprising an annular carrier disposed between the two hydrostatic plates for carrying the silicon wafer about its periphery, the annular carrier being rotatable about its longitudinal axis to rotate the carried silicon wafer.
10. The double-sided lapping device of claim 9, further comprising a pair of grinding wheels that lap both major surfaces of a silicon wafer carried by the annular carrier and hydrostatically supported by the ring carrier by rotating about a common axis of rotation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210542408.6A CN114770366B (en) | 2022-05-17 | 2022-05-17 | Static pressure plate of silicon wafer double-sided grinding device and silicon wafer double-sided grinding device |
| TW111137844A TWI836650B (en) | 2022-05-17 | 2022-10-05 | Static pressure plate of double-side polishing device for silicon wafer and double-side polishing device for silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210542408.6A CN114770366B (en) | 2022-05-17 | 2022-05-17 | Static pressure plate of silicon wafer double-sided grinding device and silicon wafer double-sided grinding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114770366A CN114770366A (en) | 2022-07-22 |
| CN114770366B true CN114770366B (en) | 2023-11-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210542408.6A Active CN114770366B (en) | 2022-05-17 | 2022-05-17 | Static pressure plate of silicon wafer double-sided grinding device and silicon wafer double-sided grinding device |
Country Status (2)
| Country | Link |
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| CN (1) | CN114770366B (en) |
| TW (1) | TWI836650B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115319639A (en) * | 2022-09-22 | 2022-11-11 | 西安奕斯伟材料科技有限公司 | Grinding device, grinding method and silicon wafer |
| CN115383616B (en) * | 2022-09-22 | 2024-05-31 | 西安奕斯伟材料科技股份有限公司 | Polishing device, polishing method and silicon wafer |
| CN115972078A (en) * | 2022-12-27 | 2023-04-18 | 西安奕斯伟材料科技股份有限公司 | A device and method for double-sided grinding of silicon wafers |
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| CN112518573B (en) * | 2020-11-06 | 2022-06-07 | 西安奕斯伟硅片技术有限公司 | Polishing apparatus, polishing machine, and polishing method |
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2022
- 2022-05-17 CN CN202210542408.6A patent/CN114770366B/en active Active
- 2022-10-05 TW TW111137844A patent/TWI836650B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202302274A (en) | 2023-01-16 |
| CN114770366A (en) | 2022-07-22 |
| TWI836650B (en) | 2024-03-21 |
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