JP4241164B2 - Semiconductor wafer polishing machine - Google Patents

Description

【００５２】
［変更実施例］
上下定盤にガラスもしくはセラミックを用いた両面ラップにおいても、同様のキャリアを用いることでガラス定盤の局所的な磨耗を抑え、定盤の長寿命化、およびラップ後ウェハの平坦性の向上が可能であることが確認できた。
【００５３】
【発明の効果】
以上説明したように本発明によれば、次のような優れた効果が得られる。
【００５４】
（１）請求項１に記載の発明によれば、いずれのウェハキャリアにおいても、同じ半径長さの幅の領域に複数のウェハ保持用ホールを規則的に分散して配置してあるため、使用時にこのキャリアが自公転移動したとき、研磨布が不均一に磨耗することがなく、そのため、同じ研磨機で、径の異なるウェハ用の複数種類のウェハキャリアを順序に関係なく交換使用しても、研磨されたウェハ面に凹凸が生じることがなく、平坦度の高い研磨加工が可能になると共に、研磨布の長寿命化を図ることができる。
【００５５】
（２）請求項２に記載の発明によれば、ウェハキャリアの自転状態において、隣接するホールが描く円環状の軌道と軌道の間に隙間が形成されることがなく、即ち、研磨布に対するウェハの非接触領域が生じることがなく、従ってこれが更に公転した際にも、研磨布が不均一に磨耗することがなく、平坦度の高い研磨加工が可能になると共に、研磨布の長寿命化を図ることができる。
【００５７】
以上のように、本発明の半導体ウェハ研磨機に特有の両面研磨用ウェハキャリアを用いて両面研磨を行うことで、ウェハサイズ変更時におけるウェハ平坦性の悪化を抑え、且つ研磨布の長寿命化が図られ、それにより両面研磨したウェハの品質、歩留および生産性を向上することが出来るものであり、工業上極めて有用である。
【図面の簡単な説明】
【図１】 本発明に係る半導体ウェハ研磨機の一実施例を示したもので、（ａ）はその側面概要図、（ｂ）は平面図、（ｃ）は側面断面図である。
【図２】 従来のφ１５０mm径ウェハ用キャリアと研磨布上で同軌道を通る、本発明の研磨機で用いるφ１００mm径ウェハ用の両面研磨用ウェハキャリアの平面図である。
【図３】 従来のφ１００mm径ウェハ用及びφ１５０mm径ウェハ用の両面研磨用ウェハキャリアの平面図である。
【図４】 従来の半導体ウェハ研磨機の問題点を説明するための模式図である。
【符号の説明】
１ 研磨布
２ 下定盤
３ ホール
４ 半導体ウェハ
５ 両面研磨用ウェハキャリア
６ 上定盤
７ サンギア
８ インターナルギア
９ 研磨液供給ホース[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a double-side polishing machine for semiconductor wafers. In particular, the present invention relates to a semiconductor wafer polishing machine capable of polishing both surfaces of a plurality of types of wafers having different diameters without impairing the high flatness and extending the life of a polishing cloth used.
[0002]
[Prior art]
Semiconductor wafers for integrated circuits are required to have high flatness as the degree of integration increases. In order to manufacture a wafer having high flatness, a double-side polishing method using a double-side polishing machine as shown in FIG. 1 is widely adopted.
[0003]
In brief, after slicing a crystal ingot and cutting a wafer, flatness is improved by lapping or surface grinding, and etching is performed to remove and clean the work-affected layer. Next, double-side polishing is performed to make both surfaces of the wafer 4 mirror surfaces having high flatness. In double-side polishing, a resin carrier 5 having a hole 3 having an inner diameter slightly larger than the outer diameter of the wafer is set on the lower surface plate 2 to which the nonwoven fabric type polishing cloth 1 is attached, and the wafer 4 is placed in the hole 3 of the carrier 5. After the setting, the upper surface plate 6 to which the nonwoven fabric type polishing cloth 1 is attached is lowered, pressure is applied, and the upper surface plate 6, the lower surface plate 2, and the carrier 5 are rotated, and both surfaces are polished while flowing the polishing liquid. Here, the upper and lower surface plates 6 and 2 rotate in reverse directions, and both surfaces of the wafer 4 are in surface contact with the upper and lower surface plates 6 and 2. The carrier 5 meshes with the sun gear 7 and the internal gear 8 and rotates and revolves due to the difference in the rotational speed between the two gears, so that each wafer 4 is uniformly contacted and moved with the polishing cloth 1 so that both surfaces thereof are polished on both sides flatly. It is a mechanism.
[0004]
When polishing with such a semiconductor wafer polishing machine, several proposals have been made to ensure high flatness of the finished surface.
[0005]
One of them is a carrier that holds the wafer in order to improve that the high flatness of the back surface of the wafer cannot be obtained because the polishing liquid does not sufficiently reach the back side (lower side) of the wafer during polishing. A groove is formed in the upper surface plate along the locus formed by the center hole of the carrier during polishing, and the polishing liquid supplied to the front side (upper side) of the wafer is A technology is known that allows the wafer to pass through the groove of the surface plate and the center hole of the carrier to reach the back side of the wafer, thereby enabling polishing with high flatness on the back side of the wafer (for example, patents). Reference 1).
[0006]
Alternatively, when two or more semiconductor wafers are affixed to a polishing block, and the polishing wafer is pressed and slid against a polishing cloth to polish the semiconductor wafer, the polishing liquid is supplied from the outside of the polishing block. In the machine, the chemical action force of the polishing liquid works strongly toward the peripheral part of the wafer affixed to the polishing block, and as a result, the wafer part located in the peripheral part of the polishing block becomes thin and located in the central part. There is a tendency that a wafer portion to be left remains thick and a wafer having a non-uniform thickness is formed. In order to eliminate such disadvantages, the outer periphery of the polishing cloth is configured to be smaller than the range of the entire movement trajectory of the wafer, and the wafer portion located in the peripheral portion of the polishing block does not slide with the polishing cloth. There has also been proposed a technique for manufacturing a wafer with good flatness by generating time (see, for example, Patent Document 2).
[0007]
[Patent Document 1]
Japanese Utility Model Publication No. 5-020864 (second page, FIGS. 1 to 3)
[0008]
[Patent Document 2]
JP-A-6-198562 (paragraphs 5-8, FIGS. 1-5)
[0009]
[Problems to be solved by the invention]
However, the flatness of the mirror-polished semiconductor wafer may be impaired due to reasons other than the above.
[0010]
That is, there are various sizes of the semiconductor wafer 4 to be polished on both sides, and there are various types of carriers 5 having holes 3 that match the size. For example, as shown in FIGS. 3A and 3B, the carrier 5 has a plurality of wafer holding holes 3 that are usually located at equal distances from the carrier center. The carrier 5 shown in FIG. 3A is provided with eight holes 3 with an inner diameter of φ103 mm for accommodating a semiconductor wafer with an outer diameter of φ100 mm, equidistant from the carrier center. The carrier 5 shown in (b) is provided with four holes 3 having an inner diameter of 153 mm for accommodating a semiconductor wafer having an outer diameter of 150 mm, equidistant from the carrier center.
[0011]
In double-sided polishing, wafers with different wafer diameters are often continuously polished with the same double-sided polishing machine, and conventional double-sided polishing wafer carriers have holes in different sizes and different positions for each wafer size as described above. In particular, when a wafer with a large size is continuously polished on both sides after a wafer with a small size is polished on both sides, the polishing action surface of the polishing cloth used mainly varies depending on the wafer size. For this reason, in the above case, a sufficiently used polishing surface and a polishing surface that is not so much are applied to a wafer having a large size. Life is shortened.
[0012]
This point will be described in detail with reference to FIGS. 3 and 4 as follows.
[0013]
The wafer carrier 5 sandwiched between the upper and lower surface plates 6 and 2 of the double-side polishing machine moves while revolving as described above, but when the carrier 5 shown in FIG. In the shaded area, the polishing cloth does not come into contact with the wafer 4 accommodated in the hole 3. When the carrier 5 revolves in such a state, as schematically shown in FIG. 4, the circular locus region a drawn by the hatched portion in FIG. 3A and the other regions b and c are polished. The accumulated contact amount (or accumulated sliding length) of the wafer with respect to the cloth is different, so that the use amount of the polishing cloth, that is, the wear amount is different, and the subsequent polishing performance is also different. In such a state, when a large-diameter wafer is then polished using a carrier for a large-diameter wafer as shown in FIG. 3B, the above-mentioned a, b and c in FIG. Since the carrier 5 for a large-diameter wafer moves while revolving on the region, the surface of the polished wafer is not necessarily a simple uneven pattern, but some unevenness is inevitably generated. It becomes difficult to obtain good high flatness. Therefore, it is necessary to replace the polishing cloth having such non-uniformity in the polishing performance at an early stage, and as a result, the life of the polishing cloth is shortened.
[0014]
Such a problem arises based on a cause different from the causes described in Patent Documents 1 and 2, and cannot be solved by the technical means described in these documents. Needed.
[0015]
The present invention has been made from such a viewpoint. The object of the present invention is to eliminate the disadvantages of the prior art described above, and to continuously perform double-side polishing of wafers having different wafer diameters with the same double-side polishing machine. Semiconductor wafer polishing that can obtain a highly flat wafer and extend the life of the polishing cloth, thereby improving the quality, yield and productivity of the semiconductor wafer whose surface is mirror-polished. Is to provide a machine.
[0016]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
[0017]
A semiconductor wafer polishing machine according to claim 1 is a double-side polishing wafer carrier that holds a plurality of semiconductor wafers to be double-side polished between upper and lower surface plates having polishing cloths attached to opposite surfaces. In a state where a plurality of wafers are sandwiched, the upper and lower surface plates are rotated relative to each other while revolving the wafer carrier so that both surfaces of the semiconductor wafer are mirror-polished and the diameters of the wafer holding holes are different . In a semiconductor wafer polishing machine configured to perform double-side polishing of a plurality of types of semiconductor wafers having different diameters by appropriately replacing the first and second wafer carriers,
The first wafer carrier, the first wafer holding holes are formed in plural, are arranged equidistantly with respect to the center of the first wafer carrier of equal inner diameter to each other,
The second wafer carrier is formed with a plurality of second wafer holding holes that are smaller than the first wafer holding holes and have the same inner diameter, and each of the second wafer holding holes has a plurality of equal numbers. Divided into groups and placed on multiple concentric circles,
From the inside of the group of wafer holding holes arranged closest to the center of the second wafer carrier to the outside of the group of wafer holding holes arranged farthest from the center of the second wafer carrier The distance is equal to the inner diameter of the first wafer holding hole .
[0018]
According to this feature, in any wafer carrier, a plurality of wafer holding holes are regularly distributed in an area having the same radial length, so that the carrier revolves during use. Sometimes, the polishing cloth does not wear unevenly. Therefore, even if multiple types of wafer carriers for wafers with different diameters are replaced and used with the same polishing machine, the polished wafer surface will not be uneven, and polishing with high flatness is possible. In addition, the life of the polishing cloth can be extended. According to this feature, for all wafer carriers for semiconductor wafers having a diameter smaller than the maximum diameter, the distance from the center of the wafer carrier to the inside of the hole arranged at the closest position is A, and the wafer carrier is arranged at the farthest position. When the distance to the outside of the hole is B, the value of B−A is arranged so as to be almost the same as the hole diameter of the wafer carrier for the maximum diameter semiconductor wafer. In both-side polishing, the wafer can be polished with a high degree of flatness, and for the wafer carrier for the semiconductor wafer with the largest diameter, the wafer holding holes are circumferentially spaced at the same distance from the center of the wafer carrier. If the number of holes is the same, the diameter of the holes is the largest under the restriction that the wafer carriers must have the same diameter. Ku can be set.
[0019]
According to a second aspect of the present invention, in the semiconductor wafer polishing machine according to the first aspect, when the second wafer carrier is rotated, the orbit drawn by the wafer holding hole is drawn by the adjacent group wafer holding holes. It is arranged so that it may overlap with at least a part of.
[0020]
According to this feature, in the rotation state of the wafer carrier, no gap is formed between the annular tracks drawn by adjacent holes, that is, a non-contact region of the wafer with respect to the polishing cloth is generated. Therefore, even when this revolves further, the abrasive cloth will not be worn unevenly. In particular, it is applied when polishing a wafer having a smaller diameter than that of a wafer carrier.
[0021]
According to a third aspect of the present invention, in the semiconductor wafer polishing machine according to the first aspect, the inner diameter of the hole for holding the wafer is larger than the outer diameter of the held semiconductor wafer, and the distance between the inner diameter of the semiconductor wafer and the outer diameter of the semiconductor wafer is 0.5-5 mm. characterized in that there.
[0023]
<Key points of the invention>
The gist of the present invention is that the wafer is double-side polished using a double-side polishing wafer carrier with the hole positions changed so as to be located at different distances from the center of the double-side polishing carrier, thereby polishing by wafer size. There is a semiconductor wafer polishing machine that not only eliminates the change of the polishing surface of the cloth as much as possible and allows the polishing cloth to have a longer life but also provides a highly flat wafer. The holes of the double-side polishing wafer carrier used in the polishing machine of the present invention are arranged in accordance with the largest size among the semiconductor wafers to be double-side polished, for example, as shown in FIG. Moreover, it is preferable that there is a clearance of 0.5 to 5 mm between the hole inner diameter and the semiconductor wafer outer diameter. This is because uniform polishing without directionality is possible when the wafer moves while freely changing the direction in the hole.
[0024]
Therefore, in the present invention, as shown in FIG. 2, the distance from the center of the wafer carrier to the inside of the hole arranged at the closest position is A, and the distance to the outside of the hole arranged at the farthest position is B. Then, the holes are arranged so that the value of B-A is substantially the same in any of the above-mentioned plurality of types of wafer carriers.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described based on the illustrated embodiments.
[0026]
FIG. 1 shows one embodiment of a semiconductor wafer polishing machine according to the present invention, in which (a) is a schematic side view thereof, (b) is a plan view thereof, and (c) is a side sectional view thereof. FIG. 2 is a plan view of a double-side polishing wafer carrier for a φ100 mm diameter wafer used in the polishing machine of the present invention, which passes the same track on the polishing cloth and the conventional φ150 mm diameter wafer carrier shown in FIG. is there.
[0027]
The semiconductor wafer polishing machine according to the present invention comprises a normal semiconductor wafer double-side polishing machine main body and a wafer carrier used therewith, and is particularly characterized by the latter.
[0028]
As described above with reference to FIG. 1, the double-side polishing machine main body includes an upper surface plate 6 and a lower surface plate 2 that rotate in opposite directions, and a nonwoven fabric-type polishing cloth 1 is attached to each of the surfaces facing each other. It is attached. A plurality of resin-made double-side polishing wafer carriers 5 having holes 3 having an inner diameter slightly larger than the outer diameter of the wafer are set on the lower surface plate 2 as shown in FIG. After the semiconductor wafer 4 to be polished is set, the upper surface plate 6 is lowered and pressure is applied, and the upper surface plate 6, the lower surface plate 2, and the carrier 5 are rotated to perform double-side polishing while flowing the polishing liquid. The upper and lower surfaces of the wafer 4 are in surface contact with the polishing cloth of the upper and lower surface plates 6 and 2. The gear engraved on the outer periphery of the wafer carrier 5 meshes with the sun gear 7 at the center of the lower surface plate and the internal gear 8 surrounding the lower surface plate, and the wafer carrier 5 rotates and revolves due to the difference in rotational speed between the two gears. Each wafer 4 held on the wafer 4 is slid while maintaining contact with the polishing pad 1 to perform double-side polishing.
[0029]
When polishing a plurality of types of semiconductor wafers having different diameters, the plurality of types of wafer carriers 5 having different diameters of the holes 3 corresponding to the diameters of these wafers are appropriately replaced and used. In the present invention, the form is different from the conventional one.
[0030]
That is, as shown in FIG. 3, a conventional wafer carrier holding hole 3 has a maximum diameter (φ153 mm) (FIG. B) and a smaller diameter (φ103 mm) (FIG. A), a plurality of holes. Are arranged at equal intervals from the center of the carrier 5.
[0031]
On the other hand, in the present invention, as shown in FIG. 2, a plurality of holes 3 (φ103 mm) other than those having a hole having a maximum diameter (φ153 mm) at least similar to that of FIG. There are two or more kinds of intervals from the center of the carrier 5 to the center of the carrier 5 (two in the embodiment of FIG. 2), and the plurality of holes 3 are regularly provided with the two or more kinds of intervals. Are arranged circumferentially.
[0032]
Further, as shown in FIG. 2, when the distance from the center of the wafer carrier 5 to the inside of the hole arranged at the nearest position is A, and the distance to the outside of the hole arranged at the farthest position is B. These holes 3 are arranged so that the values of B-A are substantially the same in any of the above-mentioned plurality of types of wafer carriers.
[0033]
If configured in this way, the value of B-A is almost the same in any carrier regardless of the difference in the hole diameter of each carrier. Therefore, as shown in FIG. Non-uniform wear is prevented, and it is possible to perform double-side polishing with high flatness on wafers of various sizes by exchanging and using various carriers.
[0034]
In principle, the holes with the largest diameter are also arranged so that there are two or more types of intervals to the center of the carrier 5, and the value of B-A in that case is the B-A of other small diameter holes. If it is arranged so that it is the same as this value, polishing of the wafer with the largest diameter will be made highly flat, so there is no particular problem, but practically all carriers used in the same polishing machine have the same diameter. Since there is a restriction that the diameter of the carrier must be limited, from the viewpoint of effective use of the carrier surface, the hole having the maximum diameter is the same as the conventional product shown in FIG. It is recommended that these are arranged circumferentially at the same distance from the center of the carrier 5.
[0035]
When the diameter of the hole 3 is extremely small compared to the diameter of the carrier 5 (for example, 1/8 or less), an annular orbit drawn by each hole in the rotation state of the wafer carrier 5 and the orbit. When the wafer carrier 5 is rotated so that a gap is not formed between the wafers, that is, a non-contact area of the wafer with respect to the polishing cloth is not generated, two or more kinds from the center of the carrier are used. It is necessary to arrange the holes so that the orbits drawn by the respective holes 3 arranged at the intervals overlap at least a part of the orbits drawn by the adjacent holes.
[0036]
【Example】
Examples of the present invention will be described below.
[0037]
The types, characteristics, etc., of the double-side polishing machine main body used in the examples and the accompanying equipment used therewith are as follows.
[0038]
a. Double-side polishing machine body The double-side polishing machine body of the first embodiment is a 16B double-side polishing machine manufactured by Hamai Sangyo Co., Ltd. This 16B double-side polishing machine can set 40 wafers with an outer diameter of φ100 mm or 20 wafers with an outer diameter of φ150 mm and polish both upper and lower surfaces of the wafer simultaneously.
[0039]
b. Semiconductor wafer 4
The semiconductor wafer 4 subjected to double-side polishing is a semi-insulating GaAs wafer having outer diameters of φ100 mm and φ150 mm.
[0040]
c. As the polishing liquid, a mixed hypochlorous acid aqueous solution obtained by mixing a hypochlorous acid aqueous solution having a chemical polishing action and a fine-diameter silica having a mechanical polishing action was used.
[0041]
d. Polishing cloth 1
As the polishing cloth 1, a non-woven polishing cloth was used to finish the mirror surface.
[0042]
e. Double-side polishing carrier 5
The material of the double-side polishing wafer carrier 5 of the first embodiment was made of glass fiber reinforced epoxy resin, and a φ100 mm wafer carrier and a φ150 mm wafer carrier were used respectively. The hole diameter in the carrier was φ103 mm for the φ100 mm wafer carrier and φ153 mm for the φ150 mm wafer carrier.
[0043]
[Example 1]
After performing double-side polishing of a φ100 mm wafer, double-side polishing of a φ150 mm wafer was performed. Specifically, it is as follows.
[0044]
Double-side polishing was performed using a double-side polishing machine with a surface plate diameter of φ1161 mm. Non-woven cloth type polishing cloth 1 was applied to the upper and lower surface plates 6 and 2.
[0045]
First, a carrier 5 for φ100 mm wafer according to the present invention in which eight holes 3 of φ103 mm located at different distances from the carrier center as shown in FIG. 2 are provided on the lower surface plate 2 as shown in FIG. A set of 40 sheets of φ100 mm diameter GaAs wafers 4 was inserted into each hole 3 with the wafer surface (front side) facing up.
[0046]
Next, the upper surface plate 6 was lowered and pressurized, and the double surface polishing was performed by rotating the lower surface plate 2 at 21 rpm and the upper surface plate 6 at 7 rpm. At this time, the polishing liquid was flowed at a flow rate of 750 ml / min, and the polishing time was 60 minutes.
[0047]
Subsequently, after applying brush dressing for 10 minutes, five φ150 mm wafer carriers similar to those shown in FIG. 3B in which four φ153 mm holes 3 are provided are set, and 20 φ150 mm diameter GaAs wafers are set. 4 was inserted into each hole 3 with the wafer surface facing up, and double-side polishing was performed as described above.
[0048]
The polished GaAs wafers of two sizes were evaluated for TTV (Total Thickness Value) and Taper with a flatness measuring device (Supersort manufactured by Tropel). As a comparative example, two types of GaAs wafers polished on both sides with a conventional carrier were evaluated in the same manner. The results are shown in Table 1.
[0049]
As a result, it was found that the quality of a φ100 mm diameter wafer polished on both sides with the double-side polishing wafer carrier according to the present invention shown in FIG.
[0050]
Further, the quality of a φ150 mm diameter wafer that has been double-side polished with a double-side polishing wafer carrier for φ100 mm diameter wafers according to the present invention shown in FIG. 2 and then double-side polished using the same φ150 mm wafer carrier as shown in FIG. As shown in FIGS. 3 (a) and 3 (b), the flatness was dramatically improved as compared with the case where both sides were polished with a conventional carrier alone.
[0051]
[Table 1]

[0052]
[Modified Example]
Even in double-sided wrapping using glass or ceramic for the upper and lower surface plates, the same carrier can be used to suppress local wear of the glass surface plate, to increase the life of the surface plate and to improve the flatness of the wafer after lapping. It was confirmed that it was possible.
[0053]
【The invention's effect】
As described above, according to the present invention, the following excellent effects can be obtained.
[0054]
(1) According to the invention described in claim 1, in any of the wafer carriers, a plurality of wafer holding holes are regularly distributed in a region having the same radius and width. Sometimes when this carrier revolves, the polishing cloth does not wear unevenly, so even if the same polishing machine is used, multiple types of wafer carriers for wafers with different diameters can be exchanged regardless of order. As a result, there is no unevenness on the polished wafer surface, polishing processing with high flatness is possible, and the life of the polishing cloth can be extended.
[0055]
(2) According to the invention described in claim 2, in the rotation state of the wafer carrier, no gap is formed between the annular tracks drawn by the adjacent holes, that is, the wafer with respect to the polishing cloth. Therefore, even if this revolves further, the polishing cloth will not be worn unevenly, and polishing with high flatness will be possible and the life of the polishing cloth will be extended. Can be planned.
[0057]
As described above, by performing double-side polishing using a wafer carrier for double-side polishing that is unique to the semiconductor wafer polishing machine of the present invention, it is possible to suppress deterioration of wafer flatness when changing the wafer size and extend the life of the polishing cloth. As a result, the quality, yield and productivity of the wafer polished on both sides can be improved, which is extremely useful industrially.
[Brief description of the drawings]
FIG. 1 shows an embodiment of a semiconductor wafer polishing machine according to the present invention, in which (a) is a schematic side view thereof, (b) is a plan view, and (c) is a side sectional view.
FIG. 2 is a plan view of a double-side polishing wafer carrier for a φ100 mm diameter wafer used in the polishing machine of the present invention, which passes the same track on a conventional φ150 mm diameter wafer carrier and a polishing cloth.
FIG. 3 is a plan view of a conventional double-side polishing wafer carrier for a φ100 mm diameter wafer and a φ150 mm diameter wafer.
FIG. 4 is a schematic diagram for explaining problems of a conventional semiconductor wafer polishing machine.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Polishing cloth 2 Lower surface plate 3 Hall 4 Semiconductor wafer 5 Wafer carrier for double-sided polishing 6 Upper surface plate 7 Sun gear 8 Internal gear 9 Polishing liquid supply hose

Claims (3)

A plurality of double-side polishing wafer carriers holding a plurality of semiconductor wafers to be double-side polished are sandwiched between upper and lower surface plates having polishing cloths attached to opposite surfaces, and the wafer carriers are self-adjusted. By rotating the upper and lower surface plates with each other while revolving, both sides of the semiconductor wafer are configured to be mirror-polished, and the first and second wafer carriers having different diameters of the wafer holding holes are exchanged appropriately. By the semiconductor wafer polishing machine configured to be able to perform double-side polishing of multiple types of semiconductor wafers with different diameters,
The first wafer carrier, the first wafer holding holes are formed in plural, are arranged equidistantly with respect to the center of the first wafer carrier of equal inner diameter to each other,
The second wafer carrier is formed with a plurality of second wafer holding holes which are smaller than the first wafer holding holes and have the same inner diameter, and each of the second wafer holding holes has a plurality of equal numbers. Divided into groups and placed on multiple concentric circles,
From the inside of the group of wafer holding holes arranged closest to the center of the second wafer carrier to the outside of the group of wafer holding holes arranged farthest from the center of the second wafer carrier A semiconductor wafer polishing machine , wherein the distance is equal to the inner diameter of the first wafer holding hole . In the semiconductor wafer polisher according to claim 1,
When allowed to rotate the second wafer carrier, a semiconductor wafer, wherein a trajectory drawn by the wafer holding hole, are arranged so as to overlap with at least a portion of the track in which the wafer holding holes adjacent groups draw Polishing machine. In the semiconductor wafer polisher according to claim 1,
1. A semiconductor wafer polishing machine, wherein an inner diameter of a wafer holding hole is larger than an outer diameter of a semiconductor wafer to be held, and an interval between the inner diameter of the hole and the outer diameter of the semiconductor wafer is 0.5 to 5 mm.

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