CN114765142A - Electronic package and manufacturing method thereof - Google Patents

Abstract

The invention relates to an electronic packaging piece and a manufacturing method thereof, which comprises the steps of forming at least two heat dissipation materials on an electronic element, combining a heat dissipation piece with the electronic element through the at least two heat dissipation materials, wherein one of the at least two heat dissipation materials is liquid metal, so that the heat dissipation effect of a hot spot area of the electronic element is favorably improved.

Description

Electronic package and method of making the same

technical field

The present invention relates to a package structure, in particular to an electronic package with a heat sink and a manufacturing method thereof.

Background technique

With the improvement of the function and processing speed of electronic products, the semiconductor chip as the core component of the electronic product needs to have higher density electronic components (Electronic Components) and electronic circuits (Electronic Circuits), so the semiconductor chip will change with the operation time. to generate a greater amount of heat energy. In addition, since the traditional encapsulating compound covering the semiconductor chip is a poor heat transfer material with a thermal conductivity of only 0.8 (unit Wm ^-1 .k ^-1 ) (that is, the heat dissipation efficiency is not good), if it cannot escape effectively The heat generated by dissipating the semiconductor chip will cause damage to the semiconductor chip and problems of product reliability.

Therefore, in order to quickly dissipate the heat energy to the outside, the industry usually configures a heat sink (HeatSink or Heat Spreader) in the semiconductor package. The backside of the chip is used to dissipate the heat generated by the semiconductor chip by means of the heat dissipation glue and the heat sink. In addition, the top surface of the heat sink is usually exposed to the encapsulation glue or directly exposed to the atmosphere, so as to achieve better heat dissipation effect.

As shown in FIG. 1 , in the conventional manufacturing method of a semiconductor package 1 , a semiconductor chip 11 and its functional surface 11 a are firstly mounted on a package substrate 10 by flip-chip bonding (ie, through conductive bumps 110 and primer 111 ). Then, a heat sink 13 and its top sheet 130 are bonded to the non-active surface 11 b of the semiconductor chip 11 via the TIM layer 12 , and the support pins 131 of the heat sink 13 are erected on the package substrate 10 through the adhesive layer 14 . Next, an encapsulation molding operation is performed, so that the encapsulation compound (not shown) covers the semiconductor chip 11 and the heat sink 13 , and the top sheet 130 of the heat sink 13 exposes the encapsulation compound.

During operation, the heat energy generated by the semiconductor chip 11 is conducted to the top sheet 130 of the heat sink 13 through the inactive surface 11 b and the TIM layer 12 to dissipate heat to the outside of the semiconductor package 1 .

However, in the existing semiconductor package 1, only a single heat-dissipating adhesive is used as the TIM layer 12, which has poor thermal conductivity, resulting in limited heat-dissipation effect, especially in the hot spot area of the semiconductor chip 11 (such as the non- The heat dissipation is not good at the middle or corner of the active surface 11 b , so it is difficult to meet the high heat dissipation requirement of the semiconductor package 1 .

In addition, when the thickness of the semiconductor package 1 is reduced and the area is increased, the deformation (ie, the degree of warpage) between the heat sink 13 and the TIM layer 12 due to the difference in thermal expansion coefficient (CTE Mismatch) is more serious. Obviously, when the amount of deformation is too large, delamination easily occurs between the top sheet 130 of the heat sink 13 and the TIM layer 12 (or with the semiconductor chip 11 ), which not only causes the heat conduction effect to decrease, but also causes the semiconductor chip to be delaminated. 11 or the primer 111 is broken, resulting in problems such as poor reliability and low process yield of the semiconductor package 1 .

Therefore, how to overcome the above-mentioned various problems of the prior art has actually become a difficult problem to be overcome in the current industry.

SUMMARY OF THE INVENTION

In view of the above-mentioned defects of the prior art, the present invention provides an electronic package and a manufacturing method thereof, so as to improve the heat dissipation effect of the hot spot area of the electronic component.

The electronic package of the present invention includes: an electronic component; at least two heat-dissipating materials disposed on the electronic component, wherein one of the at least two heat-dissipating materials is liquid metal; and a heat-dissipating member, which dissipates heat through the at least two heat-dissipating materials material in conjunction with the electronic component.

The present invention also provides a method for manufacturing an electronic package, comprising: forming at least two heat dissipation materials on an electronic component, wherein one of the at least two heat dissipation materials is liquid metal; and dissipating heat through the at least two heat dissipation materials material in conjunction with the electronic component.

In the aforementioned electronic package and its manufacturing method, a thermally conductive layer is formed between the electronic component and the at least two heat dissipation materials, and the thermally conductive layer includes a metal portion provided on the electronic component and a metal portion formed on the metal portion. Concave and convex part. For example, the concave-convex portion is grid-shaped, and the at least two heat dissipation materials are combined with the concave-convex portion.

In the aforementioned electronic package and its manufacturing method, the thermal conductivity of the liquid metal is greater than the thermal conductivity of the other ones of the at least two heat dissipation materials.

In the aforementioned electronic package and its manufacturing method, the heat sink includes a heat sink and a support pin disposed on the heat sink, and the at least two heat sinks are located between the heat sink and the electronic element. For example, a heat-conducting layer is formed between the heat-dissipating body and the at least two heat-dissipating materials, and the heat-conducting layer includes a metal portion disposed on the heat-dissipating body and a concave-convex portion formed on the metal portion. Further, the concave-convex portion is grid-shaped, and the at least two heat dissipation materials are combined with the concave-convex portion.

In the aforementioned electronic package and the manufacturing method thereof, a groove is formed on the side of the heat dissipation member facing the at least two heat dissipation materials. For example, a part of the groove is filled with the liquid metal, and another part of the groove is a vacuum area.

In the aforementioned electronic package and the manufacturing method thereof, the electronic component is also supported and electrically connected by a supporting structure.

In the aforementioned electronic package and its manufacturing method, the electronic component is covered with a packaging layer, and the electronic component is exposed on the packaging layer, so that the at least two heat dissipation materials are also disposed on the packaging layer.

As can be seen from the above, in the electronic package and the manufacturing method thereof of the present invention, at least two heat-dissipating materials are arranged on the electronic component, so that the first heat-dissipating material reduces or disperses stress, and the second heat-dissipating material (liquid metal) enhances the Compared with the prior art, the electronic package of the present invention can prevent the structural stress from concentrating on the electronic element due to the heat dissipation effect of the hot spot area of the electronic element, so as to prevent the electronic element from being broken during the subsequent manufacturing process, which may lead to reliability. Poor and low process yield problems.

In addition, through the design of the concave-convex portion of the heat-conducting layer, the surface area of the heat-conducting layer can be increased and the bonding strength of the heat-dissipating material can be enhanced. Therefore, the present invention can not only improve the heat-conducting effect, but also prevent the electronic components from being broken. The reliability and process yield of the electronic package are improved.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a conventional semiconductor package.

2A to 2E are schematic cross-sectional views of the manufacturing method of the electronic package of the present invention.

FIG. 2B-1 is a partial enlarged schematic view of FIG. 2B .

FIG. 2D-1 is a schematic partial top view of FIG. 2D .

3A to 3D are schematic partial top views of the thermally conductive layer of FIG. 2E .

Description of reference numerals

1: Semiconductor package

10: Package substrate

11: Semiconductor chip

11a, 21a: Action surface

11b, 21b: Non-active surfaces

110,210: Conductive bumps

111,211: Primer

12,3a: TIM layer

13,23: Heat sink

130: Top sheet

131, 231: Support feet

14,24: Adhesive layer

2: Electronic packages

2a: Package module

20: Bearing structure

200: Conductor

201, 202: Carrier Board

21,21': Electronic components

22: Encapsulation layer

22a: First surface

22b: Second surface

230: heat sink

232: Groove

25: Conductive elements

30: Liquid Metal

31: The first heat sink

310: Opening

32: The first thermal conductive layer

32': Second thermal conductive layer

320: Metal Department

321: Concave and convex part

321a: Grid

A: Vertical projection area

P: Vacuum area

S: hollow area.

Detailed ways

The embodiments of the present invention are described below through specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

It should be noted that the structures, proportions, sizes, etc. shown in the drawings of this specification are only used to cooperate with the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the conditions for the implementation of the present invention. , therefore does not have technical substantive significance, any structural modification, proportional relationship change or size adjustment, without affecting the effect that the present invention can produce and the purpose that can be achieved, should still fall within the scope of the present invention. The technical content must be able to cover the scope. At the same time, the terms such as "above", "first", "second" and "one" quoted in this specification are only for the convenience of description and clarity, and are not used to limit the scope of the present invention. Changes or adjustments of their relative relationships, without substantial changes to the technical content, should also be regarded as the scope of the present invention.

2A to 2E are schematic cross-sectional views of a method for manufacturing the electronic package 2 of the present invention.

As shown in FIG. 2A, a package module 2a is provided, which includes a carrier structure 20, a plurality of electronic components 21, 21' and a packaging layer 22, and the electronic components 21, 21' are disposed on the carrier structure separately from each other On the upper side of 20 , the encapsulation layer 22 is formed on the carrier structure 20 to cover the electronic components 21 , 21 ′.

In this embodiment, the carrier structure 20 is in the form of multiple carriers 201 and 202 electrically stacked on each other by a plurality of conductors 200 (which can be covered by the primer 211 ), and the carrier is, for example, a package with a core layer and a circuit structure. A substrate, a package substrate with a circuit structure in the form of a coreless layer, a silicon interposer (TSI for short) with a conductive through-silicon via (TSV) or other board types, which include at least one insulating layer and at least one circuit layer combined with the insulating layer, such as at least one fan-out type redistribution layer (redistribution layer, RDL for short). It should be understood that the carrier structure 20 can also be in the form of a single carrier board (not shown) or other boards for carrying chips, such as a lead frame, a wafer, or other metal routing ) and the like are not limited to the above.

In addition, a plurality of conductive elements 25 can be disposed on the lower side of the carrier structure 20 for subsequent processes to connect electronic devices such as circuit boards through the conductive elements 25 (not shown). The conductive elements 25 may be metal pillars such as copper pillars, metal bumps covered with insulating blocks, solder balls, solder balls with Cu core balls, or other conductive structures.

In addition, the electronic components 21, 21' are active components, passive components or a combination thereof, wherein the active components are such as semiconductor chips, and the passive components are such as resistors, capacitors and inductors. In this embodiment, the electronic components 21 , 21 ′ are semiconductor chips, which have opposite active surfaces 21 a and non-active surfaces 21 b , and the active surfaces 21 a pass through a plurality of solder materials, metal pillars or other components. The conductive bumps 210 of the like are disposed on the circuit layer of the carrier structure 20 in a flip-chip manner and electrically connected to the circuit layer, and the conductive bumps 210 are covered with the primer 211; or, the electronic components 21, 21 'The circuit layers of the carrier structure 20 can be electrically connected by bonding wires through a plurality of bonding wires (not shown); or, the electronic components 21 and 21 ' can directly contact the circuit layers of the carrier structure 20 . Therefore, required types and quantities of electronic components can be mounted on the carrier structure 20 to improve its electrical function, and the electronic components 21, 21' can be electrically connected to the carrier structure 20 in various ways, which are not limited to the above.

In addition, the encapsulation layer 22 has a first surface 22 a and a second surface 22 b opposite to each other, and the first surface 22 a is combined with the carrier structure 20 , and the inactive surface 21 b of the electronic component 21 is flush with the first surface 22 a of the encapsulation layer 22 . Two surfaces 22b, so that the inactive surfaces 21b of the electronic components 21 are exposed on the second surface 22b of the encapsulation layer 22. For example, the material for forming the encapsulation layer 22 is an insulating material, such as polyimide (PI), epoxy resin (epoxy) encapsulant or encapsulation material, which can be molded, laminated or coated formed by the method of coating.

As shown in FIG. 2B , a first thermal conductive layer 32 is formed on the inactive surface 21 b of the electronic component 21 and the second surface 22 b of the encapsulation layer 22 .

In this embodiment, the first thermal conductive layer 32 includes a metal portion 320 disposed on the electronic element 21 and the packaging layer 22 and a concave-convex portion 321 formed on the metal portion 320, as shown in FIG. 2B-1. Show. For example, the concave-convex portion 321 is mesh-shaped, such as a high-density submicron honeycomb microstructure as shown in FIG. 3A to FIG. 3D , and the concave-convex portion 321 has a plurality of meshes 321 a with different specifications (as shown in FIG. 3A ) shown) or a grid 321a of the same size (triangles, squares or polygons, etc. as shown in FIGS. 3B to 3D ).

In addition, the manufacturing method of the concave-convex portion 321 can oxidize the metal material, so that the metal portion 320 and the concave-convex portion 321 can be made of the same metal layer (eg, gallium, indium, nickel, gold, silver, copper or others).

As shown in FIG. 2C , a first heat-dissipating material 31 is formed on the first thermally conductive layer 32 , so that the first heat-dissipating material 31 is combined with the concave-convex portion 321 , and the first heat-dissipating material 31 is formed at a position corresponding to the electronic element 21 . There is at least one opening 310 exposing a portion of the first heat conducting layer 32 .

In this embodiment, the first heat dissipation material 31 is regarded as a thermal interface material (Thermal Interface Material, TIM for short), which has a low thermal conductivity, about 2-20 watts/(meter. Kelvin) (Wm ^-1 K ^-1 ). For example, the first heat dissipation material 31 is a silicone material or an ultraviolet (UV) glue such as an acrylic material, which contains metal particles, graphite material or other suitable fillers. Specifically, the silica gel material not only has high ductility, but also has a higher thermal conductivity than UV glue. Therefore, compared with UV glue, it is better to use silica gel material for the first heat dissipation material 31 .

In addition, the first heat-dissipating material 31 is filled in the grid 321a of the concave-convex portion 321, as shown in FIG. 2B-1, and the first heat-dissipating material 31 can be filled or not filled according to requirements (as shown in FIG. 2B-1 ). The shown hollow area S) the grid 321a. For example, the hollow area S can generate a vacuum pulling force, so as to control the deformation amount of the first heat dissipation material 31 .

In addition, the opening 310 is arranged to correspond to a hot spot area of the electronic component 21 . For example, the middle (or corner) of the electronic component 21 is a hot spot.

As shown in FIG. 2D , a liquid metal 30 as a second heat dissipation material is formed in the opening 310 , so that the liquid metal 30 contacts the first thermal conductive layer 32 , so that the liquid metal 30 corresponds to the hot spot of the electronic component 21 . to increase the heat dissipation efficiency of the hot spot area of the electronic component 21 .

In this embodiment, the liquid metal 30 is also regarded as a thermally conductive interface material (TIM), which has a high thermal conductivity, about 30-80Wm ^-1 K ^-1 , that is, the thermal conductivity of the liquid metal 30 is greater than that of the first heat dissipation material. 31 thermal conductivity. For example, the liquid metal 30 is pure and does not contain glue.

In addition, the upper surface of the liquid metal 30 is flush with the upper surface of the first heat dissipating material 31, so that the liquid metal 30 fills the grid 321a of the concave-convex portion 321 (that is, the hollow region S is not formed), and The first heat dissipation material 31 is used to limit the flow range of the liquid metal 30 to prevent the liquid metal 30 from overflowing.

In addition, the design of the opening 310 is used to facilitate the placement of the liquid metal 30 in the hot spot area of the electronic component 21, so it is not necessary to form the liquid metal 30 on the entire surface of the non-active surface 21b, thus reducing the number of the liquid metal 30 The amount used to save the cost of process materials.

As shown in FIG. 2E , a heat dissipation member 23 is disposed on the supporting structure 20 to cover the first heat dissipation material 31 and the liquid metal 30 .

In this embodiment, the heat sink 23 has a heat sink 230 and a plurality of support feet 231 extending downward from the edge of the heat sink 230 , and the heat sink 230 is in the form of a heat sink, and the lower side of the heat sink 230 is pressed against the first heat sink. The heat-dissipating material 31 and the second heat-dissipating material (ie, the liquid metal 30 ), so that the first heat-dissipating material 31 and the liquid metal 30 are located between the heat-dissipating body 230 and the electronic component 21 , and the supporting feet 231 are connected through the adhesive layer 24 Combined with the carrying structure 20 . For example, a second heat-conducting layer 32' is formed between the heat-dissipating body 230 and the first heat-dissipating material 31 (and/or the liquid metal 30), and the structure of the second heat-conducting layer 32' is the same as that of the first heat-conducting layer The structure of 32 is shown in FIG. 2B-1, so the metal part 320 of the second thermal conductive layer 32' is provided on the heat sink 230, and the concave-convex part 321 is made in such a way that the metal material can be oxidized to make the heat sink 230. 230. The metal portion 320 and the concave-convex portion 321 can be made of the same metal layer (eg, gallium, indium, nickel, gold, silver, copper, or others).

In addition, the ends of the supporting feet 231 can also be designed with concave and convex portions to strengthen the bonding of the adhesive layer 24 .

In addition, a groove 232 for accommodating the liquid metal 30 can be formed on the side of the heat dissipation member 23 (eg, the heat dissipation body 230 ) facing the first heat dissipation material 31 to prevent the liquid metal 30 from overflowing. For example, a part of the groove 232 is filled with the liquid metal 30 , and the other part (eg, the remaining area) is the vacuum region P. As shown in FIG.

Therefore, in the manufacturing method of the present invention, at least two heat-dissipating materials (the first heat-dissipating material 31 and the liquid metal 30 shown in FIG. 2D-1 are mainly arranged on the vertical projection area A of the inactive surface 21b of the electronic component 21 ), The first heat dissipation material 31 reduces or disperses stress, and the liquid metal 30 enhances the heat dissipation effect of the hot spot area of the electronic component 21 . Therefore, compared with the prior art, the electronic package 2 of the present invention is in the support structure 20 . When the overall flat package area is larger, the structural stress can be prevented from concentrating on the corners of the electronic components 21 , 21 ′, thereby preventing the electronic components 21 , 21 ′ or the primer 211 from cracking in the subsequent process, resulting in reliability. Poor and low process yield problems.

Further, the first heat dissipation material 31 is a flexible material, so as to effectively disperse thermal stress through deformation, so as to effectively control the deformation (warpage) of the electronic component 21 and/or the heat sink 230 to prevent the electronic The problem of delamination occurs between the element 21 (and/or the heat sink 230 ) and the first heat dissipation material 31, and the high thermal conductivity of the liquid metal 30 can improve the TIM layer 3a (composed of at least two heat dissipation materials, such as the first heat dissipation material 31). The overall heat transfer efficiency of the heat-dissipating material 31 and the liquid metal 30 , and the large surface tension of the liquid metal 30 enables the first heat-dissipating material 31 to constrain the liquid metal 30 on the surface of the electronic component 21 (such as the The flow on the non-active surface 21b) makes the liquid metal 30 adhere to the electronic element 21 (or the first thermal conductive layer 32). Therefore, compared with the prior art, the TIM layer 3a of the electronic package 2 of the present invention is Not only has a better heat dissipation effect, but also can prevent the electronic components 21 , 21 ′ or the heat sink 23 from being excessively warped due to stress concentration.

In addition, through the design of the hollow area S (or the groove 232 ), when the temperature is raised, the volume of the liquid metal 30 will expand and flow into the hollow area S (or the groove 232 ), thereby buffering the liquid metal 30 Therefore, the liquid metal 30 can be prevented from being pressed and leaking from the interface between the first heat dissipation material 31 and the electronic element 21 (or the heat dissipation member 23 ).

In addition, through the design of the concave-convex portion 321, the surface area of the first thermally conductive layer 32 and/or the second thermally conductive layer 32' is increased, so compared with the prior art, the heat dissipation area of the TIM layer 3a of the present invention is increased, so that the The electronic component 21 and/or the heat sink 230 has a better heat dissipation effect due to the increased heat dissipation area, so as to meet the high heat dissipation requirement of the electronic package 2 .

In addition, through the design of the concave-convex portion 321, the bonding strength of the first heat dissipation material 31 is enhanced and thermal stress is effectively dispersed, so as to avoid thermal stress concentration on the TIM layer 3a, so as to further control the electronic device 21 (and/or Therefore, the problem of delamination between the electronic components 21 and/or the heat sink 230 and the TIM layer 3a can be further avoided. Therefore, compared with the prior art, the present invention has The manufacturing method can not only improve the thermal conductivity, but also will not cause the electronic component 21 or the primer 211 to be broken, thereby improving the reliability and process yield of the electronic package 2 .

The present invention also provides an electronic package 2, comprising: an electronic element 21, at least two heat dissipation materials (such as a first heat dissipation material 31 and a second heat dissipation material) disposed on the electronic element 21, and one disposed on the at least two heat dissipation materials The heat-dissipating members 23 on the heat-dissipating material, and one of the heat-dissipating materials (eg, the second heat-dissipating material) is liquid metal 30 .

The heat dissipation member 23 is combined with the electronic component 21 via the first heat dissipation material 31 and the second heat dissipation material (liquid metal 30 ).

In one embodiment, a first thermal conductive layer 32 is formed between the electronic element 21 , the first heat dissipation material 31 and the liquid metal 30 . For example, the first thermal conductive layer 32 includes a metal portion 320 disposed on the electronic element 21 and a concave-convex portion 321 formed on the metal portion 320 . Preferably, the concave-convex portion 321 is grid-shaped, and the concave-convex portion 321 is an oxidized metal material, so that the first heat dissipation material 31 and the liquid metal 30 are combined with the concave-convex portion 321 .

In one embodiment, the thermal conductivity of the liquid metal 30 is greater than the thermal conductivity of the first heat dissipation material 31 .

In one embodiment, the heat dissipation member 23 includes a heat dissipation body 230 and support pins 231 disposed on the heat dissipation body 230 , and the heat dissipation body 230 is combined with the electronic component 21 through the first heat dissipation material 31 and the liquid metal 30 . For example, the heat dissipation body 230 is combined with the first heat dissipation material 31 and the liquid metal 30 through the second heat conductive layer 32 ′, and the second heat conductive layer 32 ′ includes a metal part 320 disposed on the heat dissipation body 230 and formed on the The concave-convex portion 321 on the metal portion 320 . Preferably, the concave-convex portion 321 is grid-shaped, and the concave-convex portion 321 is an oxidized metal material, so that the first heat dissipation material 31 and the liquid metal 30 are combined with the concave-convex portion 321 .

In one embodiment, the electronic package 2 further includes a carrying structure 20 for carrying and electrically connecting the electronic element 21 .

In one embodiment, the electronic package 2 further includes an encapsulation layer 22 covering the electronic element 21 and exposing the electronic element 21 , so that the first heat dissipation material 31 is further disposed on the encapsulation layer 22 .

To sum up, in the electronic package and the manufacturing method thereof of the present invention, at least two heat-dissipating materials are arranged on the electronic component, so that the first heat-dissipating material reduces or disperses stress, and the second heat-dissipating material (liquid metal) enhances the Because of the heat dissipation effect of the hot spot area of the electronic component, the electronic package of the present invention can avoid the concentration of structural stress on the electronic component, so as to prevent the electronic component from being broken in the subsequent process, resulting in poor reliability and low process yield. The problem.

In addition, through the design of the concave-convex portion of the heat-conducting layer, the surface area of the heat-conducting layer can be increased and the bonding strength of the heat-dissipating material can be enhanced. Therefore, the present invention can not only improve the heat-conducting effect, but also prevent the electronic components from being broken. The reliability and process yield of the electronic package are improved.

The above embodiments are only used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can make modifications to the above embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be as listed in the claims.

Claims (26)

1. An electronic package, comprising:

an electronic component;

at least two heat dissipation materials arranged on the electronic element, wherein one of the at least two heat dissipation materials is liquid metal; and

the heat sink is combined with the electronic element through the at least two heat dissipation materials.

2. The electronic package according to claim 1, wherein a heat conducting layer is formed between the electronic component and the at least two heat dissipating materials, and the heat conducting layer comprises a metal portion disposed on the electronic component and a concave-convex portion formed on the metal portion.

3. The electronic package according to claim 2, wherein the rugged portion is in a grid shape.

4. The electronic package according to claim 2, wherein the at least two heat dissipating materials are coupled to the rugged portion.

5. The electronic package according to claim 1, wherein the liquid metal has a thermal conductivity greater than that of the other heat spreader materials.

6. The electronic package of claim 1, wherein the heat sink comprises a heat sink and support legs disposed on the heat sink, and the at least two heat dissipation materials are disposed between the heat sink and the electronic component.

7. The electronic package according to claim 6, wherein a heat conducting layer is formed between the heat sink and the at least two heat dissipation materials, and the heat conducting layer comprises a metal portion disposed on the heat sink and a concave-convex portion formed on the metal portion.

8. The electronic package according to claim 7, wherein the rugged portion is in a grid shape.

9. The electronic package according to claim 7, wherein the at least two heat dissipating materials are coupled to the rugged portion.

10. The electronic package according to claim 1, wherein the side of the heat spreader facing the at least two heat spreader materials is formed with a groove.

11. The electronic package according to claim 10, wherein a portion of the recess is filled with the liquid metal and another portion of the recess is a vacuum region.

12. The electronic package according to claim 1, further comprising a carrier structure for carrying and electrically connecting the electronic component.

13. The electronic package according to claim 1, further comprising an encapsulation layer encapsulating the electronic component and exposing a portion of the electronic component such that the at least two heat sinks are further disposed on the encapsulation layer.

14. A method of fabricating an electronic package, comprising:

forming at least two heat dissipation materials on an electronic element, wherein one of the at least two heat dissipation materials is liquid metal; and

the heat sink is combined with the electronic component through the at least two heat dissipation materials.

15. The method of claim 14, wherein a heat conducting layer is formed between the electronic component and the at least two heat dissipation materials, and the heat conducting layer comprises a metal portion disposed on the electronic component and a concave-convex portion formed on the metal portion.

16. The method of claim 15, wherein the uneven portion is in a grid shape.

17. The method of claim 15, wherein the at least two heat dissipation materials are coupled to the rugged portion.

18. The method of claim 14, wherein the liquid metal has a thermal conductivity greater than that of the other heat spreader materials.

19. The method of claim 14, wherein the heat spreader comprises a heat spreader and the support legs, and the at least two heat dissipation members are disposed between the heat spreader and the electronic component.

20. The method of claim 19, wherein a heat conductive layer is formed between the heat sink and the at least two heat dissipation materials, and the heat conductive layer comprises a metal portion disposed on the heat sink and a bump formed on the metal portion.

21. The method of manufacturing an electronic package according to claim 20, wherein the uneven portion is in a grid shape.

22. The method of claim 20, wherein the at least two heat dissipation materials are coupled to the rugged portion.

23. The method as claimed in claim 14, wherein the heat spreader has a recess formed on a side thereof facing the at least two heat spreaders.

24. The method of claim 23, wherein a portion of the recess is filled with the liquid metal and another portion of the recess is a vacuum region.

25. The method of claim 14, further comprising supporting and electrically connecting the electronic component with a support structure.

26. The method of claim 14, further comprising encapsulating the electronic component with an encapsulation layer and exposing a portion of the electronic component to the encapsulation layer such that the at least two heat sinks are also disposed on the encapsulation layer.

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