CN114710135A - Double-sided filter, preparation method, radio frequency module and electronic equipment - Google Patents
Double-sided filter, preparation method, radio frequency module and electronic equipment Download PDFInfo
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- CN114710135A CN114710135A CN202210311965.7A CN202210311965A CN114710135A CN 114710135 A CN114710135 A CN 114710135A CN 202210311965 A CN202210311965 A CN 202210311965A CN 114710135 A CN114710135 A CN 114710135A
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 229
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 230000010354 integration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010862 gear shaping Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a double-sided filter, a preparation method, a radio frequency module and electronic equipment. The double-sided filter includes: a first surface acoustic wave filter and a second surface acoustic wave filter; the front surface of the first surface acoustic wave filter is provided with a first surface acoustic wave chip; the second surface acoustic wave filter is positioned on the first surface acoustic wave filter through a bonding support structure, a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter, and the front surface of the first surface acoustic wave filter is opposite to the front surface of the second surface acoustic wave filter; the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure are enclosed to form a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are located in the shared cavity structure. The technical scheme provided by the embodiment of the invention realizes the double-sided filter with small transverse size.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a double-sided filter, a preparation method, a radio frequency module and electronic equipment.
Background
In recent years, with the progress of research and technological progress, surface acoustic wave filters have been greatly developed in terms of miniaturization, high operating frequency, large bandwidth, integration, high withstand power, and the like.
At present, a plurality of surface acoustic wave filters are generally tiled on the surface of a substrate to realize a filtering function, and the filter with the structure has the defect that the transverse size of a device is too large.
Disclosure of Invention
The invention provides a double-sided filter, a preparation method, a radio frequency module and electronic equipment, which are used for reducing the transverse size of a filter formed by a plurality of surface acoustic wave filters.
According to an aspect of the present invention, there is provided a double-sided filter including: a first surface acoustic wave filter and a second surface acoustic wave filter;
a first surface acoustic wave chip is arranged on the front surface of the first surface acoustic wave filter;
the second surface acoustic wave filter is positioned on the first surface acoustic wave filter through a bonding support structure, a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter, and the front surface of the first surface acoustic wave filter is opposite to the front surface of the second surface acoustic wave filter;
the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure are enclosed to form a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are located in the shared cavity structure.
Optionally, the first surface acoustic wave filter further includes a first substrate and a first functional line, where the first functional line and the first surface acoustic wave chip are located on a first surface of the first substrate, and the first functional line is electrically connected to the first surface acoustic wave chip;
the second surface acoustic wave filter further includes a second substrate and a second functional circuit, the second functional circuit and the second surface acoustic wave chip being located on the first surface of the second substrate, the second functional circuit being electrically connected to the second surface acoustic wave chip.
Optionally, the first substrate is provided with a first via hole, the first surface acoustic wave filter further includes a first conductive connection structure, the first conductive connection structure is located in the first via hole, and the first conductive connection structure is electrically connected to the first functional circuit;
the second substrate is provided with a second through hole; the second surface acoustic wave filter further includes a second conductive connection structure located in the second via, the second conductive connection structure being electrically connected to the second functional circuit.
Optionally, the bonding support structure is located between the first functional line and the first saw chip;
the bonding support structure is located between the second functional wire and the second surface acoustic wave chip.
Optionally, the bonding support structure comprises an organic bonding layer or a bonding layer.
Optionally, the device further includes a third conductive connection structure and a fourth conductive connection structure;
the third conductive connection structure is positioned on the second surface of the first substrate and is electrically connected with the first conductive connection structure, and the second surface of the first substrate and the first surface of the first substrate are oppositely arranged;
the fourth conductive connection structure is located on the second surface of the second substrate, the fourth conductive connection structure is electrically connected with the second conductive connection structure, and the second surface of the second substrate and the first surface of the second substrate are oppositely arranged.
Optionally, the third conductive connection structure includes a pad or a solder ball;
and/or the fourth conductive connecting structure comprises a bonding pad or a solder ball; the fourth conductive connection structure and the third conductive connection structure may be the same or different.
According to another aspect of the present invention, there is provided a method of manufacturing a double-sided filter, including:
providing a first surface acoustic wave filter and a second surface acoustic wave filter, wherein a first surface acoustic wave chip is arranged on the front surface of the first surface acoustic wave filter, and a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter;
forming a bonding support structure on a front surface of the first surface acoustic wave filter or a front surface of the second surface acoustic wave filter;
and the second surface acoustic wave filter is arranged on the first surface acoustic wave filter through the bonding support structure, the front surface of the first surface acoustic wave filter and the front surface of the second surface acoustic wave filter are oppositely arranged, wherein the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure are enclosed into a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both positioned in the shared cavity structure.
According to another aspect of the present invention, there is provided a radio frequency module, including: the radio frequency module comprises the double-sided filter in any embodiment of the invention.
According to another aspect of the present invention, there is provided an electronic apparatus including: the radio frequency module according to any embodiment of the present invention.
The filter provided by the embodiment is a double-sided filter, and the second surface acoustic wave filter is positioned on the first surface acoustic wave filter through the bonding support structure, so that the transverse size of the filter is reduced relative to the filter structure in which the first surface acoustic wave filter and the second surface acoustic wave filter are positioned on the surface of the same substrate. And first surface acoustic wave filter, second surface acoustic wave filter and bonding bearing structure enclose into sharing cavity structure, and first surface acoustic wave chip and second surface acoustic wave chip all are located sharing cavity structure, and sharing cavity structure is used for reflecting the surface acoustic wave back to first surface acoustic wave chip promptly, can also reflect the surface acoustic wave back to second surface acoustic wave chip to improve the figure of quality of first surface acoustic wave chip and second surface acoustic wave chip, reduced energy loss.
It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present invention, nor do they necessarily limit the scope of the invention. Other features of the present invention will become apparent from the following description.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a double-sided filter according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a double-sided filter according to an embodiment of the present invention;
fig. 3-6 are schematic structural diagrams corresponding to steps of a method for manufacturing a double-sided filter according to an embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The embodiment of the invention provides a double-sided filter. Fig. 1 is a schematic structural diagram of a double-sided filter according to an embodiment of the present invention. Referring to fig. 1, the double-sided filter includes: a first surface acoustic wave filter 100 and a second surface acoustic wave filter 200; the front surface 100a of the first surface acoustic wave filter 100 is provided with a first surface acoustic wave chip 101; the second surface acoustic wave filter 200 is located above the first surface acoustic wave filter 100 by bonding the support structure 300, the front surface 200a of the second surface acoustic wave filter 200 is provided with the second surface acoustic wave chip 201, and the front surface 100a of the first surface acoustic wave filter 100 is disposed opposite to the front surface 200a of the second surface acoustic wave filter 200; the first surface acoustic wave filter 100, the second surface acoustic wave filter 200, and the bonding support structure 300 enclose a common cavity structure 400, and the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are located in the common cavity structure 400.
In the present embodiment, the surface acoustic wave chip of the front surface 100a of the first surface acoustic wave filter 100 is referred to as a first surface acoustic wave chip 101, and the surface acoustic wave chip of the front surface 200a of the second surface acoustic wave filter 200 is referred to as a second surface acoustic wave chip 201. The surface acoustic wave chip comprises a piezoelectric material substrate and an interdigital transducer (IDT) positioned on the surface of the piezoelectric material substrate. The working principle of the surface acoustic wave chip is as follows: one end of an interdigital transducer on the surface of the piezoelectric material substrate converts an input electric signal into an acoustic signal through an inverse piezoelectric effect, the acoustic signal is transmitted along the surface of the piezoelectric material substrate, and the acoustic signal is converted into the electric signal by the other end of the interdigital transducer to be output. The functions of the whole surface acoustic wave chip are as follows: the acoustic signal in a specific frequency range is filtered in the process of the acoustic signal transmitted on the surface of the piezoelectric material substrate to realize a filtering function, and the conversion of the acoustic signal and an electric signal is completed by utilizing the interdigital transducer.
The surface acoustic wave chip is similar to a sensor, and when various different frequency bands enter the interdigital transducer, the interdigital transducer can vibrate like the sensor, so that the effect of filtering out the unnecessary wave bands is achieved. Therefore, the partially bifurcated finger transducer needs vibration during operation, and therefore, other materials cannot cover the surface of the partially bifurcated finger transducer to influence the vibration frequency of the partially bifurcated finger transducer. The saw chip needs to be located within the cavity structure. The cavity structure is used for reflecting the acoustic surface wave to the surface acoustic wave chip, so that the quality factor of the surface acoustic wave chip is improved, and the energy loss is reduced. The interdigital transducer is a gear shaping line.
The filter provided by the embodiment is a double-sided filter, and the second surface acoustic wave filter 200 is located on the first surface acoustic wave filter 100 through the bonding support structure 300, so that the transverse size of the filter is reduced and the longitudinal integration level of the filter is improved compared with a filter structure in which the first surface acoustic wave filter 100 and the second surface acoustic wave filter 200 are located on the surface of the same substrate. And the first surface acoustic wave filter 100, the second surface acoustic wave filter 200 and the bonding support structure 300 enclose a common cavity structure 400, the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are both located in the common cavity structure 400, that is, the common cavity structure 400 is used for reflecting the surface acoustic waves back to the first surface acoustic wave chip 101, and simultaneously can reflect the surface acoustic waves back to the second surface acoustic wave chip 201, on one hand, the quality factors of the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are improved, the energy loss is reduced, on the other hand, the number of the cavity structures is reduced, and the cost of the filter is reduced.
The number of the double-sided filters of the first surface acoustic wave filter 100, the adhesive support structure 300, and the second surface acoustic wave filter 200 among the filters may be set according to actual requirements. In other embodiments, the number of the first surface acoustic wave chips 101 on the front surface of the first surface acoustic wave filter 100 and the number of the second surface acoustic wave chips 201 on the front surface of the second surface acoustic wave filter 200 are not limited.
Alternatively, referring to fig. 1, the first surface acoustic wave filter 100 further includes a first substrate 102 and a first functional wiring 103, the first functional wiring 103 and the first surface acoustic wave chip 101 are located on a first surface of the first substrate 102, and the first functional wiring 103 is electrically connected to the first surface acoustic wave chip 101. The second surface acoustic wave filter 200 further includes a second substrate 202 and a second functional wire 203, the second functional wire 203 and the second surface acoustic wave chip 201 are located on a first surface of the second substrate 202, and the second functional wire 203 is electrically connected to the second surface acoustic wave chip 201.
Illustratively, the first substrate 102 and the second substrate 202 may be wafers. The first functional wiring 103 and the second functional wiring 203 may be, for example, wirings made of metallic copper.
Specifically, the first functional wiring 103 is used to extract an electric signal of the first surface acoustic wave chip 101. The second functional wiring 203 is for extracting an electric signal of the second surface acoustic wave chip 201.
Optionally, referring to fig. 1, the first substrate 102 is provided with a first via hole 104, the first via hole 104 exposes the first functional line 103, the first surface acoustic wave filter 100 further includes a first conductive connection structure 105, the first conductive connection structure 105 is located in the first via hole 104, and the first conductive connection structure 105 is electrically connected to the first functional line 103; the second substrate 202 is provided with a second via hole 204, and the second via hole 204 exposes the second functional circuit 203; the second surface acoustic wave filter 200 further includes a second conductive connection structure 205, the second conductive connection structure 205 being located within the second via 204, the second conductive connection structure 205 being electrically connected to the second functional line 203.
It should be noted that the shapes of the first via 104 and the second via 204 may include any one of a trapezoidal via, a rectangular via, or a cylindrical via.
Specifically, the first conductive connection structure 105 is electrically connected to the first functional circuit 103, so that the first conductive connection structure 105 guides the electric signal of the first surface acoustic wave chip 101 to the back surface of the first surface acoustic wave filter 100, thereby facilitating electrical connection with other devices.
The second conductive connection structure 205 is electrically connected to the second functional wire 203, so that the second conductive connection structure 205 guides the electrical signal of the second surface acoustic wave chip 201 to the back of the second surface acoustic wave filter 200, thereby facilitating electrical connection with other devices.
Optionally, referring to fig. 1, the bonding support structure 300 is located between the first saw chip 101 and the first functional circuit 103, the bonding support structure 300 is located between the second saw chip 201 and the second functional circuit 203, so as to enable the first functional circuit 103 and the second functional circuit 203 to be located outside the common cavity structure 400, and both the first saw chip 101 and the second saw chip 201 are located in the common cavity structure 400, that is, the common cavity structure 400 is used to reflect the saw back to the first saw chip 101, and simultaneously reflect the saw back to the second saw chip 201, on one hand, the quality factors of the first saw chip 101 and the second saw chip 201 are improved, energy loss is reduced, on the other hand, the number of cavity structures is reduced, and the cost of the filter is reduced.
Alternatively, referring to fig. 1, the bonding support structure 300 includes an organic bonding layer or bonding layer.
The organic adhesive layer or the bonding layer can achieve the effect of positioning the second surface acoustic wave filter 200 on the first surface acoustic wave filter 100 through the adhesive support structure 300. The organic adhesive layer may be, for example, a double-sided tape.
Optionally, referring to fig. 1, a third conductive connection structure 106 and a fourth conductive connection structure 206 are further included; the third conductive connection structure 106 is located on the second surface of the first substrate 102, the third conductive connection structure 106 is electrically connected to the first conductive connection structure 105, and the second surface of the first substrate 102 is opposite to the first surface of the first substrate 102; the fourth conductive connection structure 206 is located on the second surface of the second substrate 202, the fourth conductive connection structure 206 is electrically connected to the second conductive connection structure 205, and the second surface of the second substrate 202 is opposite to the first surface of the second substrate 202.
Specifically, the third conductive connecting structure 106 is used to electrically connect the first surface acoustic wave filter 100 and other devices. If the third conductive connection structure 106 is electrically connected to other devices by wire bonding. The third conductive connection structure 106 can be a bonding pad and is electrically connected to other devices by wire bonding. The third conductive connection structures 106 may also be solder balls.
The fourth conductive connection structure 206 is used to electrically connect the second surface acoustic wave filter 200 to other devices. The fourth conductive connection structure 206 can be a bonding pad and is electrically connected to other devices by wire bonding. The fourth conductive connection structure 206 may also be a solder ball.
Optionally, the fourth conductive connection structure 206 and the third conductive connection structure 106 are the same or different.
The embodiment of the invention also provides a preparation method of the double-sided filter. Fig. 2 is a flowchart of a method for manufacturing a double-sided filter according to an embodiment of the present invention. Fig. 3-6 are schematic structural diagrams corresponding to steps of a method for manufacturing a double-sided filter according to an embodiment of the present invention. Referring to fig. 2, the method for manufacturing the double-sided filter includes the steps of:
and S110, providing a first surface acoustic wave filter and a second surface acoustic wave filter, wherein a first surface acoustic wave chip is arranged on the front surface of the first surface acoustic wave filter, and a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter.
Referring to fig. 3, a first surface acoustic wave filter 100 is provided. The front surface 100a of the first surface acoustic wave filter 100 is provided with a first surface acoustic wave chip 101. Referring to fig. 4, a second surface acoustic wave filter 200 is provided. The front surface 200a of the second surface acoustic wave filter 200 is provided with a second surface acoustic wave chip 201.
And S120, forming a bonding support structure on the front surface of the first surface acoustic wave filter or the front surface of the second surface acoustic wave filter.
Illustratively, referring to fig. 5, the front surface 100a of the first saw filter 100 forms an adhesive support structure 300. Referring to fig. 6, by the patterning process, only the adhesion support structure 300 located between the first saw chip 101 and the first functional wiring 103 remains.
And S130, arranging the second surface acoustic wave filter on the first surface acoustic wave filter through the bonding support structure, wherein the front surface of the first surface acoustic wave filter is opposite to the front surface of the second surface acoustic wave filter, the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure form a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are located in the shared cavity structure.
Referring to fig. 1, the second surface acoustic wave filter 200 is positioned on the first surface acoustic wave filter 100 by the bonding support structure 300, and the bonding support structure 300 serves as a support and also bonds and fixes the second surface acoustic wave filter 200 and the first surface acoustic wave filter 100 to form a common cavity structure 400 surrounded by the first surface acoustic wave filter 100, the second surface acoustic wave filter 200, and the bonding support structure 300.
In the double-sided filter prepared by the preparation method provided by the embodiment, the second surface acoustic wave filter 200 is located on the first surface acoustic wave filter 100 through the bonding support structure 300, and compared with a filter structure in which the first surface acoustic wave filter 100 and the second surface acoustic wave filter 200 are located on the surface of the same substrate, the transverse size of the filter is reduced, and the longitudinal integration level of the filter is improved. And the first surface acoustic wave filter 100, the second surface acoustic wave filter 200 and the bonding support structure 300 enclose a common cavity structure 400, the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are both located in the common cavity structure 400, that is, the common cavity structure 400 is used for reflecting the surface acoustic waves back to the first surface acoustic wave chip 101 and also reflecting the surface acoustic waves back to the second surface acoustic wave chip 201, on one hand, the quality factors of the first surface acoustic wave chip 101 and the second surface acoustic wave chip 201 are improved, the energy loss is reduced, on the other hand, the number of cavity structures is reduced, and the cost of the filter is reduced.
The embodiment of the invention also provides the radio frequency module. The rf module includes the double-sided filter described in any of the above embodiments. The double-sided filter described in any of the above embodiments may form a duplex filter or a multiplex filter required by the rf module.
The radio frequency module comprises the double-sided filter, so that the transverse size of the radio frequency module is reduced, the longitudinal integration level of the radio frequency module is improved, and the cost of the radio frequency module is reduced. Specifically, in the double-sided filter, the second surface acoustic wave filter 200 is located on the first surface acoustic wave filter 100 through the bonding support structure 300, and compared with a filter structure in which the first surface acoustic wave filter 100 and the second surface acoustic wave filter 200 are located on the surface of the same substrate, the transverse size of the filter is reduced, and the longitudinal integration level of the filter and the radio frequency module is improved. And first surface acoustic wave filter 100, second surface acoustic wave filter 200 and bonding bearing structure 300 enclose into sharing cavity structure 400, first surface acoustic wave chip 101 and second surface acoustic wave chip 201 all are located sharing cavity structure 400, share cavity structure 400 be used for with the surface acoustic wave reflection back to first surface acoustic wave chip 101 promptly, can also reflect the surface acoustic wave back to second surface acoustic wave chip 201, improved the quality factor of first surface acoustic wave chip 101 and second surface acoustic wave chip 201 on the one hand, energy loss has been reduced, on the other hand the quantity of cavity structure has been reduced, the cost of filter and radio frequency module has been reduced.
The embodiment of the invention also provides electronic equipment, and the electronic equipment comprises the radio frequency module in any embodiment.
The electronic equipment can be a mobile phone, a computer, an unmanned aerial vehicle and the like. Because the electronic equipment comprises the radio frequency module in any of the above embodiments, the radio frequency module has a small transverse size and high longitudinal integration level, on one hand, a space can be provided for other devices in the electronic equipment, such as a power module, and on the other hand, the cost of the electronic equipment is reduced.
It should be understood that various forms of the flows shown above may be used, with steps reordered, added, or deleted. For example, the steps described in the present invention may be executed in parallel, sequentially, or in different orders, and are not limited herein as long as the desired results of the technical solution of the present invention can be achieved.
The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A two-sided filter, comprising: a first surface acoustic wave filter and a second surface acoustic wave filter;
a first surface acoustic wave chip is arranged on the front surface of the first surface acoustic wave filter;
the second surface acoustic wave filter is positioned on the first surface acoustic wave filter through a bonding support structure, a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter, and the front surface of the first surface acoustic wave filter is opposite to the front surface of the second surface acoustic wave filter;
the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure are enclosed to form a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are located in the shared cavity structure.
2. The double-sided filter according to claim 1, wherein said first surface acoustic wave filter further comprises a first substrate and first functional lines, said first functional lines and said first surface acoustic wave chip being located on a first surface of said first substrate, said first functional lines being electrically connected to said first surface acoustic wave chip;
the second surface acoustic wave filter further includes a second substrate and a second functional circuit, the second functional circuit and the second surface acoustic wave chip being located on the first surface of the second substrate, the second functional circuit being electrically connected to the second surface acoustic wave chip.
3. The two-sided filter of claim 2, wherein the first substrate is provided with a first via, the first surface acoustic wave filter further comprising a first conductive connection structure, the first conductive connection structure being located within the first via, the first conductive connection structure being electrically connected to the first functional line;
the second substrate is provided with a second through hole; the second surface acoustic wave filter further includes a second conductive connection structure located in the second via, the second conductive connection structure being electrically connected to the second functional circuit.
4. The two-sided filter of claim 2, wherein the adhesive support structure is located between the first functional line and the first saw chip;
the bonding support structure is located between the second functional wire and the second surface acoustic wave chip.
5. The two-sided filter of claim 1, wherein the adhesive support structure comprises an organic adhesive layer or a bonding layer.
6. The two-sided filter of claim 3, further comprising a third conductive connection structure and a fourth conductive connection structure;
the third conductive connection structure is positioned on the second surface of the first substrate and is electrically connected with the first conductive connection structure, and the second surface of the first substrate and the first surface of the first substrate are oppositely arranged;
the fourth conductive connection structure is located on the second surface of the second substrate, the fourth conductive connection structure is electrically connected with the second conductive connection structure, and the second surface of the second substrate and the first surface of the second substrate are oppositely arranged.
7. The double-sided filter of claim 6, wherein the third conductive connection structure comprises a solder pad or a solder ball;
and/or the fourth conductive connecting structure comprises a bonding pad or a solder ball; the fourth conductive connection structure and the third conductive connection structure may be the same or different.
8. A method for manufacturing a double-sided filter, comprising:
providing a first surface acoustic wave filter and a second surface acoustic wave filter, wherein a first surface acoustic wave chip is arranged on the front surface of the first surface acoustic wave filter, and a second surface acoustic wave chip is arranged on the front surface of the second surface acoustic wave filter;
forming a bonding support structure on a front surface of the first surface acoustic wave filter or a front surface of the second surface acoustic wave filter;
and the second surface acoustic wave filter is arranged on the first surface acoustic wave filter through the bonding support structure, the front surface of the first surface acoustic wave filter and the front surface of the second surface acoustic wave filter are oppositely arranged, wherein the first surface acoustic wave filter, the second surface acoustic wave filter and the bonding support structure are enclosed into a shared cavity structure, and the first surface acoustic wave chip and the second surface acoustic wave chip are both positioned in the shared cavity structure.
9. A radio frequency module, comprising: the radio frequency module comprises the double-sided filter of any one of claims 1-7.
10. An electronic device, comprising: the radio frequency module of claim 9.
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| CN202210311965.7A CN114710135B (en) | 2022-03-28 | 2022-03-28 | Double-sided filter, preparation method, radio frequency module and electronic equipment |
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| CN202210311965.7A CN114710135B (en) | 2022-03-28 | 2022-03-28 | Double-sided filter, preparation method, radio frequency module and electronic equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116707488A (en) * | 2023-08-07 | 2023-09-05 | 荣耀终端有限公司 | Filter, preparation method thereof, radio frequency module and electronic equipment |
| CN117134737A (en) * | 2023-10-27 | 2023-11-28 | 象朵创芯微电子(苏州)有限公司 | Bulk acoustic wave resonator chip structure and manufacturing method |
| WO2024174797A1 (en) * | 2023-02-20 | 2024-08-29 | 深圳飞骧科技股份有限公司 | Filter wafer level package module and radio frequency module |
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