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CN111342797A - Piezoelectric filter and electronic equipment having the same - Google Patents

Piezoelectric filter and electronic equipment having the same Download PDF

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Publication number
CN111342797A
CN111342797A CN201811566388.6A CN201811566388A CN111342797A CN 111342797 A CN111342797 A CN 111342797A CN 201811566388 A CN201811566388 A CN 201811566388A CN 111342797 A CN111342797 A CN 111342797A
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substrate
heat
series resonators
piezoelectric filter
resonator
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庞慰
郑云卓
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Priority to CN201811566388.6A priority Critical patent/CN111342797A/en
Priority to PCT/CN2019/121004 priority patent/WO2020125342A1/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02047Treatment of substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/644Coupled resonator filters having two acoustic tracks
    • H03H9/6456Coupled resonator filters having two acoustic tracks being electrically coupled

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明涉及一种压电滤波器,包括:第一基底;与第一基底对置的第二基底;串联谐振器支路,具有多个串联谐振器;多个并联谐振器支路,每个并联谐振器支路具有并联谐振器,串联谐振器和并联谐振器设置在第一基底上;以及散热单元,所述散热单元设置在两个相邻串联谐振器之间,形成将来自所述两个相邻串联谐振器中的至少一个的热量传导到第二基底的热传导路径。本发明还涉及具有该滤波器的电子设备。

Figure 201811566388

The invention relates to a piezoelectric filter, comprising: a first substrate; a second substrate opposite to the first substrate; a series resonator branch with a plurality of series resonators; a plurality of parallel resonator branches, each of which The parallel resonator branch has a parallel resonator, the series resonator and the parallel resonator are arranged on the first substrate; and a heat dissipation unit is arranged between two adjacent series resonators to form a heat dissipation unit from the two adjacent series resonators. The heat of at least one of the adjacent series resonators is conducted to the heat conduction path of the second substrate. The invention also relates to an electronic device having the filter.

Figure 201811566388

Description

压电滤波器及具有其的电子设备Piezoelectric filter and electronic equipment having the same

技术领域technical field

本发明的实施例涉及通信用滤波器器件,尤其涉及一种具有改进的热传导结构的滤波器,以及一种具有该滤波器的电子设备。Embodiments of the present invention relate to filter devices for communication, and more particularly, to a filter having an improved thermal conduction structure, and an electronic device having the filter.

背景技术Background technique

近年来,随着市场的迅猛发展,无线通讯终端和设备不断朝着小型化、多模-多频段的方向发展。因此,此类产品对于小尺寸、高性能的滤波器的需求日益增长。In recent years, with the rapid development of the market, wireless communication terminals and equipment continue to develop in the direction of miniaturization and multi-mode-multi-band. Therefore, there is an increasing demand for small size, high performance filters for such products.

目前,能够满足通讯终端使用的小尺寸滤波器主要是压电声波滤波器,构成此类声波滤波器的谐振器主要包括:FBAR(Film Bulk Acoustic Resonator,薄膜体声波谐振器),SMR(Solidly Mounted Resonator,固态装配谐振器)和 SAW(Surface AcousticWave,表面声波谐振器)。其中基于体声波原理制造的 FBAR和SMR滤波器,相比基于表面声波原理制造的SAW滤波器,具有更低的插入损耗,更高的功率容量的特点。At present, the small-sized filters that can meet the use of communication terminals are mainly piezoelectric acoustic wave filters. The resonators that constitute such acoustic wave filters mainly include: FBAR (Film Bulk Acoustic Resonator, thin-film bulk acoustic resonator), SMR (Solidly Mounted Resonator, solid-state assembly resonator) and SAW (Surface AcousticWave, surface acoustic wave resonator). Among them, the FBAR and SMR filters manufactured based on the bulk acoustic wave principle have the characteristics of lower insertion loss and higher power capacity than the SAW filter manufactured based on the surface acoustic wave principle.

滤波器的低插入损耗可以确保在相同的天线发射功率(由国际统一的通信协议规定)前提下,发射信道的放大器可以发送更小的功率以节省终端设备的电源消耗,从而延长同样电量条件下的使用时间,并且减小发送链路中的发热,带来更好的用户使用体验。The low insertion loss of the filter can ensure that under the premise of the same antenna transmit power (specified by the international unified communication protocol), the amplifier of the transmit channel can transmit less power to save the power consumption of the terminal equipment, thereby extending the power consumption under the same power condition. It also reduces the heat generation in the transmission link, bringing a better user experience.

滤波器具有更高的功率容量,则意味着可以通过适当地提升终端设备的发射功率等级,扩大终端发送信号的覆盖范围,从而降低运营商基站的组网密度,节约运营商的组网成本。目前支持更高的功率等级已经逐渐成为4G甚至5G通信终端的基本要求,这就要求应用于发射通道的滤波器,需要具有更高的功率容量。The filter has a higher power capacity, which means that the transmission power level of the terminal device can be appropriately increased to expand the coverage of the signal sent by the terminal, thereby reducing the network density of the operator's base station and saving the operator's networking cost. At present, supporting higher power levels has gradually become a basic requirement for 4G and even 5G communication terminals, which requires filters applied to the transmission channel and needs to have higher power capacity.

但是,热量的产生是发送通道滤波器不可能避免的,而热量的聚集会造成作为滤波器组成单元的谐振器上的微小结构因应力、形变、高温灼烧等原因损坏。因此,如何将谐振器因承受较大功率产生的热量以最快的速度散出去以提高滤波器的功率容量,成为滤波器设计工程师需要重点考虑的问题。However, the generation of heat is unavoidable in the transmission channel filter, and the accumulation of heat will cause damage to the tiny structures on the resonator, which is a component unit of the filter, due to stress, deformation, and high temperature burning. Therefore, how to dissipate the heat generated by the resonator due to the high power to be dissipated at the fastest speed to improve the power capacity of the filter has become a key issue that filter design engineers need to consider.

图1是现有技术中比较常见的梯形结构压电带通滤波器100的电路图。附图标记131为滤波器的输入端口,附图标记132为滤波器的输出端口。在输入端口131和输出端口132之间,有一系列位于串联通路、串联相接的串联谐振器101、102、103、104,以及一系列位于并联通路、从串联通路上的某些节点连接到地的并联谐振器111、112、113。当功率信号的频率位于滤波器的通带频率范围内时,功率信号会从输入端口,依次通过串联谐振器,到达输出端口,每个串联谐振器都会因为存在损耗而在谐振器的区域,特别是谐振的中心位置产生热量,相比之下因为信号大部分不会通过并联谐振器,因此并联谐振器产生的热量相对较小。FIG. 1 is a circuit diagram of a piezoelectric bandpass filter 100 with a trapezoidal structure that is relatively common in the prior art. Reference numeral 131 is an input port of the filter, and reference numeral 132 is an output port of the filter. Between the input port 131 and the output port 132, there is a series of series resonators 101, 102, 103, 104 in series paths, connected in series, and a series in parallel paths, connected from certain nodes on the series paths to Parallel resonators 111, 112, 113 to ground. When the frequency of the power signal is within the passband frequency range of the filter, the power signal will pass through the series resonators from the input port, and then reach the output port. It is the center of the resonance that generates heat, compared to a parallel resonator that generates relatively little heat because most of the signal does not pass through the parallel resonator.

图2为现有技术中滤波器芯片200的剖面示意图,其中只示意的画出了两个位于串联通路的串联谐振器,以及相关的一些结构。附图标记210是第一基底,上面主要用于制作谐振器(以FBAR谐振器为例)并组成滤波器。附图标记 219是底电极金属层,附图标记213是位于底电极上方的压电层,附图标记214 和215是位于压电层上方的顶电极,附图标记218和219是位于底电极下方在基底210上形成的空气腔。顶电极214、压电层213、底电极216以及下方空气腔218的重叠区域,形成了一个串联谐振器(第一串联谐振器);顶电极215、压电层213、底电极216以及下方空气腔219的重叠区域,形成了另一个串联谐振器(第二串联谐振器);这两个串联谐振器的底电极216是同一个,也就是通过底电极216将两个串联谐振器连接在一起。附图标记209是第二基底,主要用于通过晶圆级封装,形成一个密闭的空腔结构,从而保护设置在第一基底的谐振器不被外部因素影响其正常工作。附图标记206和207可以是金,铝,铜等金属导体,本质上并无不同,区别只在于:金属导体207是位于芯片靠近外边缘位置的密闭环状图形,起密封作用;金属导体206是起到电连接作用的金属图形与谐振器的某个电极直接相连。附图标记205是穿过第二基底209的金属导通孔,与位于芯片外表面的焊盘202相连。谐振器的电学信号通过底电极216、金属导体206、金属导通孔205传导到焊盘202,再通过金丝键合线,或倒装焊接的焊球与装载芯片的外部载板相连接。FIG. 2 is a schematic cross-sectional view of a filter chip 200 in the prior art, in which only two series resonators located in a series path and some related structures are schematically drawn. Reference numeral 210 is a first substrate, which is mainly used for making a resonator (taking an FBAR resonator as an example) and composing a filter. Reference numeral 219 is the bottom electrode metal layer, reference numeral 213 is the piezoelectric layer over the bottom electrode, reference numerals 214 and 215 are the top electrodes over the piezoelectric layer, and reference numerals 218 and 219 are the bottom electrodes The air cavity formed on the substrate 210 below. The overlapping area of the top electrode 214, the piezoelectric layer 213, the bottom electrode 216 and the lower air cavity 218 forms a series resonator (the first series resonator); the top electrode 215, the piezoelectric layer 213, the bottom electrode 216 and the lower air The overlapping area of the cavity 219 forms another series resonator (the second series resonator); the bottom electrodes 216 of the two series resonators are the same, that is, the two series resonators are connected together through the bottom electrode 216 . Reference numeral 209 is the second substrate, which is mainly used to form a sealed cavity structure through wafer level packaging, so as to protect the resonator disposed on the first substrate from external factors affecting its normal operation. Reference numerals 206 and 207 can be metal conductors such as gold, aluminum, copper, etc., which are essentially the same, except that the metal conductor 207 is a closed annular pattern located near the outer edge of the chip, which plays a sealing role; the metal conductor 206 It is the metal pattern that plays the role of electrical connection and is directly connected to a certain electrode of the resonator. Reference numeral 205 is a metal via hole passing through the second substrate 209 and connected to the pad 202 on the outer surface of the chip. The electrical signal of the resonator is conducted to the pad 202 through the bottom electrode 216, the metal conductor 206, and the metal via 205, and then connected to the external carrier board carrying the chip through gold wire bonding wires or flip-chip solder balls.

图2中的两个串联谐振器在通过高功率信号时,会在谐振器的中心产生热量,但由于空气是热的不良导体,而通常制作基底的材料硅以及所有金属都是热的良导体,因此谐振器产生的热量将主要通过图中的箭头示意路径散出到芯片外部。The two series resonators in Figure 2 will generate heat in the center of the resonator when passing a high power signal, but since air is a poor conductor of heat, silicon and all metals are generally good conductors of heat. , so the heat generated by the resonator will be mainly dissipated to the outside of the chip through the path indicated by the arrow in the figure.

图3给出了滤波器芯片300(可以认为对应于图2汇总的滤波器芯片200) 的俯视示意图。附图标记310是基底;附图标记337是密封环;附图标记336 是通孔及基底键合区;附图标记344为顶电极图形(细实线);附图标记346为底电极图形(粗实线);附图标记348为空气腔(虚线);附图标记311-314为串联通路的串联谐振器;附图标记321-323为并联通路的并联谐振器。FIG. 3 presents a schematic top view of a filter chip 300 (which can be considered to correspond to the filter chip 200 summarized in FIG. 2 ). Reference numeral 310 is a substrate; reference numeral 337 is a seal ring; reference numeral 336 is a via and substrate bonding area; reference numeral 344 is a top electrode pattern (thin solid line); reference numeral 346 is a bottom electrode pattern (thick solid line); reference numeral 348 is an air cavity (dotted line); reference numerals 311-314 are series resonators of series passages; reference numerals 321-323 are parallel resonators of parallel passages.

如图2所示,在上述的滤波器芯片中,当芯片采用倒装装配在封装载板上时,串联谐振器的热量主要通过第二基底散热,在第一基底与第二基底之间的封装空间为真空或者通有气体的情况下,串联谐振器的热量,除了两个基底之间的金属通孔结构之外,难以到达第二基底,这不利于串联谐振器的散热。As shown in FIG. 2, in the above filter chip, when the chip is flip-chip mounted on the package carrier board, the heat of the series resonator is mainly dissipated through the second substrate, and the heat of the series resonator is mainly dissipated through the second substrate. When the encapsulation space is evacuated or filled with gas, it is difficult for the heat of the series resonator to reach the second substrate except for the metal via structure between the two substrates, which is not conducive to the heat dissipation of the series resonator.

发明内容SUMMARY OF THE INVENTION

为缓解或解决使用现有技术中的上述问题的至少一个方面,提出本发明。The present invention is proposed to alleviate or solve at least one aspect of the above-mentioned problems using the prior art.

本发明提出了一种压电滤波器,包括:第一基底;与第一基底对置的第二基底;串联谐振器支路,具有多个串联谐振器;多个并联谐振器支路,每个并联谐振器支路具有并联谐振器,串联谐振器和并联谐振器设置在第一基底上;散热单元,所述散热单元设置在两个相邻串联谐振器之间,形成将来自所述两个相邻串联谐振器中的至少一个的热量传导到第二基底的热传导路径。The present invention provides a piezoelectric filter, comprising: a first substrate; a second substrate opposite to the first substrate; a series resonator branch with a plurality of series resonators; a plurality of parallel resonator branches, each The two parallel resonator branches have parallel resonators, and the series resonators and the parallel resonators are arranged on the first substrate; the heat dissipation unit is arranged between two adjacent series resonators, forming The heat of at least one of the adjacent series resonators is conducted to the heat conduction path of the second substrate.

可选的,所述散热单元包括第一热传导部和第二热传导部,所述第一热传导部与所述两个相邻串联谐振器中的至少一个形成热连接,所述第二热传导部与所述第一热传导部热连接且与适于将热量传导到所述第二基底。进一步可选的,所述第一热传导部与第一基底形成热连接。Optionally, the heat dissipation unit includes a first heat conduction part and a second heat conduction part, the first heat conduction part is thermally connected with at least one of the two adjacent series resonators, and the second heat conduction part is connected to the second heat conduction part. The first thermally conductive portion is thermally connected and adapted to conduct heat to the second substrate. Further optionally, the first heat conduction portion is thermally connected to the first substrate.

可选的,所述散热单元包括第二热传导部,所述第二热传导部与所述两个相邻串联谐振器中的至少一个形成热连接,且与适于将热量传导到所述第二基底。进一步可选的,所述第二热传导部与第一基底形成热连接。Optionally, the heat dissipation unit includes a second heat conduction portion, the second heat conduction portion is thermally connected to at least one of the two adjacent series resonators, and is adapted to conduct heat to the second heat conduction portion. base. Further optionally, the second heat conduction portion is thermally connected to the first substrate.

可选的,所述散热单元还包括设置在第二基底的与第一基底相对的表面的第三热传导部,所述第三热传导部与第二热传导部以及第二基底均形成热连接。可选的,所述第三热传导部包括热传导图案或者热传导层。Optionally, the heat dissipation unit further includes a third heat conduction part disposed on a surface of the second base opposite to the first base, and the third heat conduction part is thermally connected to both the second heat conduction part and the second base. Optionally, the third heat conduction part includes a heat conduction pattern or a heat conduction layer.

可选的,所述两个相邻串联谐振器共用底电极,且所述共用底电极在所述两个相邻串联谐振器的压电层之间的部分构成所述第一热传导部;或者所述两个相邻串联谐振器共用底电极,且所述第一热传导部与所述共用底电极在所述两个相邻串联谐振器的压电层之间的部分热连接。Optionally, the two adjacent series resonators share a bottom electrode, and a portion of the shared bottom electrode between the piezoelectric layers of the two adjacent series resonators constitutes the first heat conduction part; or The two adjacent series resonators share a bottom electrode, and the first thermally conductive portion is thermally connected to a portion of the common bottom electrode between the piezoelectric layers of the two adjacent series resonators.

可选的,所述两个相邻串联谐振器彼此间隔开;所述两个相邻串联谐振器中至少一个串联谐振器的顶电极与所述第一热传导部热连接。Optionally, the two adjacent series resonators are spaced apart from each other; and the top electrode of at least one of the two adjacent series resonators is thermally connected to the first heat conduction portion.

可选的,所述两个相邻串联谐振器彼此间隔开;所述两个相邻串联谐振器中至少一个串联谐振器的底电极与所述第一热传导部热连接。Optionally, the two adjacent series resonators are spaced apart from each other; the bottom electrode of at least one of the two adjacent series resonators is thermally connected to the first heat conduction part.

可选的,所述压电滤波器包括密封环;至少一个谐振器邻近所述密封环设置,且所述至少一个谐振器中的至少一个的底电极朝向所述密封环延伸而与所述密封环热连接。Optionally, the piezoelectric filter includes a sealing ring; at least one resonator is disposed adjacent to the sealing ring, and a bottom electrode of at least one of the at least one resonator extends toward the sealing ring to seal with the sealing ring. Ring thermal connection.

根据本发明的实施例的另一方面,提出一种电子设备,具有上述的压电滤波器。According to another aspect of the embodiments of the present invention, there is provided an electronic device having the above-mentioned piezoelectric filter.

附图说明Description of drawings

以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点,图中相同的附图标记始终表示相同的部件,其中:These and other features and advantages of the various disclosed embodiments of the present invention may be better understood by the following description and accompanying drawings, in which like reference numerals refer to like parts throughout, wherein:

图1为现有技术中的一种滤波器的电路示意图;1 is a schematic circuit diagram of a filter in the prior art;

图2为现有技术中的滤波器芯片的剖面示意图;2 is a schematic cross-sectional view of a filter chip in the prior art;

图3为对应于图2的滤波器芯片的示意性俯视图;FIG. 3 is a schematic top view of the filter chip corresponding to FIG. 2;

图4a为根据本发明的一个示例性实施例的滤波器芯片的剖面示意图,图4b 为图4a的变形实施例的示意图;4a is a schematic cross-sectional view of a filter chip according to an exemplary embodiment of the present invention, and FIG. 4b is a schematic view of a variant embodiment of FIG. 4a;

图5为根据本发明的一个示例性实施例的与图4a对应的滤波器芯片的示意性俯视图;FIG. 5 is a schematic top view of the filter chip corresponding to FIG. 4a according to an exemplary embodiment of the present invention;

图6为根据本发明的一个示例性实施例的滤波器芯片的剖面示意图;6 is a schematic cross-sectional view of a filter chip according to an exemplary embodiment of the present invention;

图7为根据本发明的一个示例性实施例的与图6对应的滤波器芯片的示意性俯视图;FIG. 7 is a schematic top view of the filter chip corresponding to FIG. 6 according to an exemplary embodiment of the present invention;

图8为根据本发明的一个示例性实施例的滤波器芯片的示意性俯视图,其中仅示出了并联谐振器与密封环之间的热连接部;8 is a schematic top view of a filter chip according to an exemplary embodiment of the present invention, wherein only the thermal connection between the parallel resonator and the seal ring is shown;

图9为根据本发明的一个示例性实施例的与图8对应的滤波器芯片的剖面示意图。FIG. 9 is a schematic cross-sectional view of the filter chip corresponding to FIG. 8 according to an exemplary embodiment of the present invention.

具体实施方式Detailed ways

下面通过实施例,并结合附图,对本发明的技术方案作进一步具体的说明。在说明书中,相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释,而不应当理解为对本发明的一种限制。The technical solutions of the present invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals refer to the same or similar parts. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, and should not be construed as a limitation of the present invention.

图4a为根据本发明的一个示例性实施例的滤波器芯片400的剖面示意图,图4b为图4a的变形实施例的示意图。图4b所示实施例与图4a中的不同在于,在图4b中,两个相邻串联谐振器的底电极分开设置,且附图标记432对应的散热部件分别与该两个谐振器的底电极热连接,还与第一基底直接热连接。图5 为根据本发明的一个示例性实施例的与图4a对应的滤波器芯片500的示意性俯视图。FIG. 4a is a schematic cross-sectional view of a filter chip 400 according to an exemplary embodiment of the present invention, and FIG. 4b is a schematic view of a modified embodiment of FIG. 4a. The difference between the embodiment shown in FIG. 4b and FIG. 4a is that, in FIG. 4b, the bottom electrodes of two adjacent series resonators are arranged separately, and the heat dissipation components corresponding to the reference numeral 432 are respectively connected to the bottom electrodes of the two resonators. The electrodes are thermally connected, and are also directly thermally connected to the first substrate. FIG. 5 is a schematic top view of a filter chip 500 corresponding to FIG. 4a according to an exemplary embodiment of the present invention.

在本发明中,附图2-9中的附图标记中后两位相同,表示两者为相同或者相似的部件或者结构。In the present invention, the last two digits of the reference numerals in Figures 2-9 are the same, indicating that the two are the same or similar components or structures.

如图4a、图4b所示,附图标记432为将两个串联谐振器(在附图5中,对应于串联谐振器512和513)拉远后在中间连接的底电极上方添加的键合区域,键合区域432同时连接到位于第二基底409上的用于散热的金属层430;金属层 430也可以省去。由于金属的热阻较小,金属层面积越大,越容易帮助器件散热。As shown in Figures 4a and 4b, reference numeral 432 is a bond added above the bottom electrode of the intermediate connection after the two series resonators (in Figure 5, corresponding to series resonators 512 and 513) are pulled apart area, the bonding area 432 is simultaneously connected to the metal layer 430 on the second substrate 409 for heat dissipation; the metal layer 430 can also be omitted. Since the thermal resistance of metal is small, the larger the area of the metal layer, the easier it is to help the device to dissipate heat.

图4a和图4b中示出了示意性的热流图,由于器件是倒装焊装配于下面的封装载板上,第二基底409的上表面通过焊球与封装载板的金属相连接,而下表面则与用于保护的塑封用树脂类材料接触,由于金属的热阻远小于塑封用材料,因此器件的热主要是通过第二基底409散到封装载板中,这样连接两片基底的金属就成了主要散热路径。Schematic heat flow diagrams are shown in Figures 4a and 4b. Since the device is flip-chip mounted on the underlying package carrier, the upper surface of the second substrate 409 is connected to the metal of the package carrier through solder balls, while The lower surface is in contact with the plastic encapsulation resin material used for protection. Since the thermal resistance of the metal is much smaller than that of the plastic encapsulation material, the heat of the device is mainly dissipated into the encapsulation carrier through the second substrate 409, thus connecting the two substrates. Metal becomes the main heat dissipation path.

本专利在不影响器件电性能的前提下,通过在原本没有键合金属的区域添加类似的散热路径,有效的将串联谐振器在高功率输入下产生的热量散到第二基底,从而可以有效散发到封装载板。Under the premise of not affecting the electrical performance of the device, this patent can effectively dissipate the heat generated by the series resonator under high power input to the second substrate by adding a similar heat dissipation path in the area where there is no bonding metal, so that it can effectively distributed to the package carrier.

图5示出了用于散热的金属图形及键合区530,其可以有效的降低邻近的两个串联谐振器512和513的温度,从而提高滤波器的功率容量。图5中示出了串联谐振器511-514,并联谐振器521-523,以及散热的金属图形530。FIG. 5 shows the metal pattern and bonding area 530 for heat dissipation, which can effectively reduce the temperature of the two adjacent series resonators 512 and 513, thereby increasing the power capacity of the filter. Shown in FIG. 5 are series resonators 511-514, parallel resonators 521-523, and metal pattern 530 for heat dissipation.

图6为根据本发明的一个示例性实施例的滤波器芯片600的剖面示意图,图7为根据本发明的一个示例性实施例的与图6对应的滤波器芯片700的示意性俯视图。6 is a schematic cross-sectional view of a filter chip 600 according to an exemplary embodiment of the present invention, and FIG. 7 is a schematic top view of the filter chip 700 corresponding to FIG. 6 according to an exemplary embodiment of the present invention.

如图6所示,附图标记632为将两个串联谐振器(在图7中,对应于谐振器713与714)拉远后,在中间连接的底电极上方添加键合区域(散热部),其同时连接到位于第二基底上的用于散热的金属图形630;与图4a、图4b不同的是,其是将两个原本通过顶电极连接的串联谐振器拉远,并将顶电极连接到一个散热结构632上。As shown in FIG. 6, the reference numeral 632 is to add a bonding area (heat dissipation part) above the bottom electrode connected in the middle after the two series resonators (in FIG. 7, corresponding to the resonators 713 and 714) are pulled apart. , which is simultaneously connected to the metal pattern 630 for heat dissipation on the second substrate; the difference from FIG. 4a and FIG. 4b is that the two series resonators originally connected through the top electrode are pulled away, and the top electrode Connected to a heat dissipation structure 632 .

如图7所示,添加的散热结构可以有效降低两个串联谐振器713和714的温度,从而提高滤波器的功率容量。图7中示出了串联谐振器711-714,并联谐振器721-723,以及散热的金属图形730。As shown in FIG. 7 , the added heat dissipation structure can effectively reduce the temperature of the two series resonators 713 and 714 , thereby increasing the power capacity of the filter. Shown in FIG. 7 are series resonators 711-714, parallel resonators 721-723, and metal pattern 730 for heat dissipation.

基于以上,本发明提出了一种滤波器,包括:Based on the above, the present invention proposes a filter, including:

第一基底410或610;the first substrate 410 or 610;

与第一基底对置的第二基底409或609;a second substrate 409 or 609 opposite to the first substrate;

串联谐振器支路(例如参见图1),具有多个串联谐振器(例如参见图5中的511-514,图7中的711-714);a series resonator branch (see eg Fig. 1) having a plurality of series resonators (see eg 511-514 in Fig. 5, 711-714 in Fig. 7);

多个并联谐振器支路(例如参见图1),每个并联谐振器支路具有并联谐振器(例如参见图5中的521-523,图7中的721-723),串联谐振器和并联谐振器设置在第一基底上;Multiple parallel resonator branches (see eg Figure 1), each parallel resonator branch having parallel resonators (eg see 521-523 in Figure 5, 721-723 in Figure 7), series resonators and parallel the resonator is arranged on the first substrate;

散热单元,所述散热单元设置在两个相邻串联谐振器(例如图5中的512 与513之间,图7中的713与714)之间,形成将来自所述两个相邻串联谐振器中的至少一个的热量传导到第二基底409的热传导路径。a heat dissipation unit, the heat dissipation unit is arranged between two adjacent series resonators (for example, between 512 and 513 in FIG. 5 and 713 and 714 in FIG. 7 ), forming a The heat of at least one of the devices is conducted to the heat conduction path of the second substrate 409 .

参见图4a、图4b,在示例性实施例中,所述散热单元包括第一热传导部(图 4a中为共用底电极416的一部分)和第二热传导部432,所述第一热传导部与所述两个相邻串联谐振器中的至少一个形成热连接,所述第二热传导部432与所述第一热传导部热连接且与适于将热量传导到所述第二基底409。在图4a中,所述两个相邻串联谐振器共用底电极,且所述共用底电极在所述两个相邻串联谐振器的压电层之间的部分构成所述第一热传导部。虽然没有示出,在图4a中,第一热传导部也可以直接与共用底电极形成热连接,即所述第一热传导部与所述共用底电极在所述两个相邻串联谐振器的压电层之间的部分热连接。Referring to FIGS. 4a and 4b, in an exemplary embodiment, the heat dissipation unit includes a first heat conduction part (a part of the common bottom electrode 416 in FIG. 4a) and a second heat conduction part 432, the first heat conduction part and the At least one of the two adjacent series resonators is thermally connected, and the second thermally conductive portion 432 is thermally connected to the first thermally conductive portion and is adapted to conduct heat to the second substrate 409 . In FIG. 4a, the two adjacent series resonators share a bottom electrode, and the portion of the common bottom electrode between the piezoelectric layers of the two adjacent series resonators constitutes the first heat conduction portion. Although not shown, in FIG. 4a, the first heat conduction part can also be directly thermally connected to the common bottom electrode, that is, the first heat conduction part and the common bottom electrode are at the voltage of the two adjacent series resonators. Partial thermal connection between electrical layers.

在图4a和图4b中,第二热传导部432同时与两个串联谐振器的底电极热连接。In Figures 4a and 4b, the second thermally conductive portion 432 is thermally connected to the bottom electrodes of the two series resonators at the same time.

在图4a和图4b中,附图标记430的部件对应于第三热传导部。虽然没有示出,如前所述,也可以不设置第三热传导部,只要第二热传导部与第二基底 409形成热连接即可。In Figures 4a and 4b, the component referenced 430 corresponds to the third heat conducting portion. Although not shown, as described above, the third heat conduction part may not be provided, as long as the second heat conduction part is thermally connected to the second substrate 409.

虽然没有示出,所述散热单元也可以仅仅包括既与对应的串联谐振器直接形成热连接且与第二基底直接形成热连接的一个热传导部件。进一步的,该一个热传导部件也可以同时与第一基底形成热连接,例如,可以是图4b中移除了第三热传导部件430且第二热传导部件432与第二基底形成热连接的形式。Although not shown, the heat dissipating unit may also include only one thermally conductive member that is directly thermally connected to the corresponding series resonator and directly thermally connected to the second substrate. Further, the one thermally conductive member may also be thermally connected to the first substrate at the same time, for example, in the form of FIG. 4b with the third thermally conductive member 430 removed and the second thermally conductive member 432 thermally connected to the second substrate.

如图6所示,两个相邻串联谐振器彼此间隔开;所述两个相邻串联谐振器中至少一个串联谐振器的顶电极与所述第一热传导部热连接。As shown in FIG. 6 , two adjacent series resonators are spaced apart from each other; the top electrode of at least one of the two adjacent series resonators is thermally connected to the first heat conduction portion.

参见图4b,两个相邻串联谐振器彼此间隔开,在将附图标记432所指部件作为第一热传导部的情况下,两个相邻串联谐振器中至少一个串联谐振器的底电极可与所述第一热传导部热连接。Referring to FIG. 4b, two adjacent series resonators are spaced apart from each other, and in the case where the part indicated by reference numeral 432 is used as the first heat conduction part, the bottom electrode of at least one of the two adjacent series resonators may be thermally connected to the first heat conducting portion.

基于本发明的技术方案,将串联连接器的热量通过专门设置的散热单元引导到第二基底,这有效加强了滤波器的散热。Based on the technical solution of the present invention, the heat of the series connector is guided to the second substrate through a specially arranged heat dissipation unit, which effectively enhances the heat dissipation of the filter.

图8为根据本发明的一个示例性实施例的滤波器芯片800的示意性俯视图,其中仅示出了并联谐振器与密封环之间的热连接部;图9为根据本发明的一个示例性实施例的与图8对应的滤波器芯片900的剖面示意图。FIG. 8 is a schematic top view of a filter chip 800 according to an exemplary embodiment of the present invention, in which only the thermal connection between the parallel resonator and the seal ring is shown; FIG. 9 is an exemplary embodiment of the present invention A schematic cross-sectional view of the filter chip 900 corresponding to FIG. 8 according to the embodiment.

图8中示出了设置于基底810上的串联谐振器811-814,并联谐振器821-823。图8中的阴影部分构成另外设置的散热部分。如图8所示,将工作温度比较高的串联谐振器814附近的并联谐振器822和823的底电极,同时连接到密封环 837上构成所述散热部分,这样不改变电路的原理结构,对滤波器的性能也没有影响,但可以有效降低并联谐振器822和823的温度,从而为温度较高的串联谐振器814提供更良好的散热环境,提高滤波器的功率容量。In FIG. 8, series resonators 811-814 and parallel resonators 821-823 provided on the substrate 810 are shown. The hatched portion in FIG. 8 constitutes an additionally provided heat dissipation portion. As shown in FIG. 8 , the bottom electrodes of the parallel resonators 822 and 823 near the series resonator 814 with a relatively high operating temperature are connected to the sealing ring 837 to form the heat dissipation part, so that the principle structure of the circuit is not changed. The performance of the filter is also not affected, but the temperature of the parallel resonators 822 and 823 can be effectively reduced, thereby providing a better heat dissipation environment for the series resonator 814 with a higher temperature and improving the power capacity of the filter.

如图9所示,并联谐振器922与923设置在串联谐振器914附近,可以看到并联谐振器922与923的底电极均延伸到密封环937下方而与密封环937形成热连接。As shown in FIG. 9 , the parallel resonators 922 and 923 are disposed near the series resonator 914 , and it can be seen that the bottom electrodes of the parallel resonators 922 and 923 both extend below the sealing ring 937 to form a thermal connection with the sealing ring 937 .

需要指出的是,虽然在图8和图9中以并联谐振器的底电极延伸到密封环下方与密封环形成热连接为例进行了说明,但是,邻近密封环的串联谐振器的底电极也可以延伸到密封环的下方而与密封环形成热连接。It should be pointed out that although the bottom electrode of the parallel resonator extends below the sealing ring to form a thermal connection with the sealing ring as an example for illustration in FIGS. 8 and 9, the bottom electrode of the series resonator adjacent to the sealing ring is also It may extend below the sealing ring to form a thermal connection with the sealing ring.

基于图8和图9的技术方案,可以有效利用滤波器的密封环,让其作为散热路径的组成部分。Based on the technical solutions shown in Fig. 8 and Fig. 9, the sealing ring of the filter can be effectively used as an integral part of the heat dissipation path.

需要专门指出的是,图8或图9的方案可以单独实施,也可以与图4a、4b-7 中的方案结合在一起实施。It should be specially pointed out that, the solution in FIG. 8 or FIG. 9 can be implemented alone or in combination with the solutions in FIGS. 4a, 4b-7.

本发明的实施例也涉及一种电子设备,包括上述的射频压电多工器。需要指出的是,这里的电子设备,包括但不限于射频前端、滤波放大模块等中间产品,以及手机、WIFI、无人机等终端产品。Embodiments of the present invention also relate to an electronic device including the above-mentioned radio frequency piezoelectric multiplexer. It should be pointed out that the electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.

尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化,本发明的范围由所附权利要求及其等同物限定。Although embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that changes may be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is determined by It is defined by the appended claims and their equivalents.

Claims (12)

1. A piezoelectric filter comprising:
a first substrate;
a second substrate opposite the first substrate;
a series resonator arm having a plurality of series resonators; and
a plurality of parallel resonator arms, each parallel resonator arm having a parallel resonator,
wherein:
the series resonator and the parallel resonator are arranged on the first substrate;
the piezoelectric filter further includes a heat dissipation unit disposed between two adjacent series resonators forming a heat conduction path that conducts heat from at least one of the two adjacent series resonators to the second substrate.
2. The piezoelectric filter of claim 1, wherein:
the heat dissipation unit includes a first heat conductive portion thermally connected to at least one of the two adjacent series resonators, and a second heat conductive portion thermally connected to the first heat conductive portion and adapted to conduct heat to the second substrate.
3. The piezoelectric filter of claim 2, wherein:
the first heat conduction portion is in thermal connection with the first substrate.
4. The piezoelectric filter of claim 1, wherein:
the heat dissipating unit includes a second heat conductive portion thermally connected to at least one of the two adjacent series resonators and adapted to conduct heat to the second substrate.
5. The piezoelectric filter of claim 4, wherein:
the second heat conduction portion is thermally connected to the first substrate.
6. The piezoelectric filter of any one of claims 2-5, wherein:
the heat dissipation unit further comprises a third heat conduction part arranged on the surface, opposite to the first substrate, of the second substrate, and the third heat conduction part is in thermal connection with the second heat conduction part and the second substrate.
7. The piezoelectric filter of claim 6, wherein:
the third heat conductive portion includes a heat conductive pattern or a heat conductive layer.
8. The piezoelectric filter of any one of claims 2-7, wherein:
the two adjacent series resonators share a bottom electrode, and a portion of the shared bottom electrode between the piezoelectric layers of the two adjacent series resonators constitutes the first heat conduction section; or
The two adjacent series resonators share a bottom electrode, and the first thermally conductive section is thermally connected to a portion of the shared bottom electrode between the piezoelectric layers of the two adjacent series resonators.
9. The piezoelectric filter of any one of claims 2-7, wherein:
the two adjacent series resonators are spaced apart from each other;
the top electrode of at least one of the two adjacent series resonators is thermally connected to the first thermally conductive section.
10. The piezoelectric filter of any one of claims 2-7, wherein:
the two adjacent series resonators are spaced apart from each other;
the bottom electrode of at least one of the two adjacent series resonators is thermally connected to the first thermally conductive section.
11. The piezoelectric filter of any one of claims 1-10, wherein:
the piezoelectric filter includes a seal ring;
at least one resonator is disposed adjacent the confinement ring, and a bottom electrode of at least one of the at least one resonator extends toward the confinement ring to be thermally coupled to the confinement ring.
12. An electronic device having a piezoelectric filter according to any one of claims 1 to 11.
CN201811566388.6A 2018-12-18 2018-12-18 Piezoelectric filter and electronic equipment having the same Pending CN111342797A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113422589A (en) * 2021-07-09 2021-09-21 天通瑞宏科技有限公司 Acoustic surface filter
CN114337585A (en) * 2022-01-11 2022-04-12 武汉敏声新技术有限公司 Single crystal film bulk acoustic resonator, preparation method thereof and filter
CN114710135A (en) * 2022-03-28 2022-07-05 象朵创芯微电子(苏州)有限公司 Double-sided filter, preparation method, radio frequency module and electronic equipment
CN117013987A (en) * 2022-11-07 2023-11-07 北京芯溪半导体科技有限公司 Acoustic wave filter, communication equipment and electronic equipment

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497842A (en) * 2002-09-25 2004-05-19 ������������ʽ���� Piezoelectric resonator, piezoelectric wave filter and communication device
CN1977450A (en) * 2004-07-20 2007-06-06 株式会社村田制作所 Piezoelectric filter
CN101421920A (en) * 2004-01-30 2009-04-29 诺基亚公司 Method for improving heat dissipation in encapsulated electronic components
CN102270963A (en) * 2010-03-29 2011-12-07 京瓷金石株式会社 piezoelectric device
US20140368296A1 (en) * 2013-06-18 2014-12-18 Taiyo Yuden Co., Ltd. Acoustic wave device
CN108352812A (en) * 2015-11-05 2018-07-31 株式会社村田制作所 Piezoelectric oscillator and piezoelectric vibration device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112007002969B4 (en) * 2007-01-24 2017-12-21 Murata Mfg. Co., Ltd. Piezoelectric resonator and piezoelectric filter
DE102014117238B4 (en) * 2014-11-25 2017-11-02 Snaptrack, Inc. Self-heating BAW resonator, RF filter with BAW resonator, duplexer with RF filter and method of manufacture

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497842A (en) * 2002-09-25 2004-05-19 ������������ʽ���� Piezoelectric resonator, piezoelectric wave filter and communication device
CN101421920A (en) * 2004-01-30 2009-04-29 诺基亚公司 Method for improving heat dissipation in encapsulated electronic components
CN1977450A (en) * 2004-07-20 2007-06-06 株式会社村田制作所 Piezoelectric filter
CN102270963A (en) * 2010-03-29 2011-12-07 京瓷金石株式会社 piezoelectric device
US20140368296A1 (en) * 2013-06-18 2014-12-18 Taiyo Yuden Co., Ltd. Acoustic wave device
CN108352812A (en) * 2015-11-05 2018-07-31 株式会社村田制作所 Piezoelectric oscillator and piezoelectric vibration device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113422589A (en) * 2021-07-09 2021-09-21 天通瑞宏科技有限公司 Acoustic surface filter
CN114337585A (en) * 2022-01-11 2022-04-12 武汉敏声新技术有限公司 Single crystal film bulk acoustic resonator, preparation method thereof and filter
CN114710135A (en) * 2022-03-28 2022-07-05 象朵创芯微电子(苏州)有限公司 Double-sided filter, preparation method, radio frequency module and electronic equipment
CN114710135B (en) * 2022-03-28 2024-05-14 象朵创芯微电子(苏州)有限公司 Double-sided filter, preparation method, radio frequency module and electronic equipment
CN117013987A (en) * 2022-11-07 2023-11-07 北京芯溪半导体科技有限公司 Acoustic wave filter, communication equipment and electronic equipment
CN117013987B (en) * 2022-11-07 2024-02-09 北京芯溪半导体科技有限公司 Acoustic wave filter, communication equipment and electronic equipment

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