CN114696777B - Package and method of manufacturing the same - Google Patents
Package and method of manufacturing the same Download PDFInfo
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- CN114696777B CN114696777B CN202111360843.9A CN202111360843A CN114696777B CN 114696777 B CN114696777 B CN 114696777B CN 202111360843 A CN202111360843 A CN 202111360843A CN 114696777 B CN114696777 B CN 114696777B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Auxiliary Devices For And Details Of Packaging Control (AREA)
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Abstract
本发明提供能确保上表面与下表面之间的电连接并能防止钎料向侧面不必要地大量流出的封装体及其制造方法。金属化部(200)包括密封面(SS)上的密封金属化层(210)、陶瓷部(100)的下表面(P2)上的下表面金属化层(220)及陶瓷部(100)的侧面(P3)上的侧面金属化层(230)。侧面金属化层(230)具有与密封金属化层(210)相连的上方部分(231)、与下表面金属化层(220)相连的下方部分(232)及将上方部分(231)与下方部分(232)彼此相连的中间部分(233)。金属层(300)由对钎料(930)的润湿性比金属化材料高的金属材料构成。金属层(300)覆盖金属化部(200)的密封金属化层(210)，金属化部(200)的侧面金属化层(230)的中间部分(233)未被覆盖。
The present invention provides a package body and a manufacturing method thereof that can ensure electrical connection between the upper surface and the lower surface and can prevent solder from flowing out in large quantities to the side unnecessarily. The metallization part (200) includes a sealing metallization layer (210) on a sealing surface (SS), a lower surface metallization layer (220) on a lower surface (P2) of a ceramic part (100), and a side metallization layer (230) on a side (P3) of the ceramic part (100). The side metallization layer (230) includes an upper portion (231) connected to the sealing metallization layer (210), a lower portion (232) connected to the lower surface metallization layer (220), and an intermediate portion (233) connecting the upper portion (231) and the lower portion (232) to each other. The metal layer (300) is composed of a metal material having a higher wettability to solder (930) than the metallization material. The metal layer (300) covers the sealing metallization layer (210) of the metallization part (200), and the middle part (233) of the side metallization layer (230) of the metallization part (200) is not covered.
Description
Technical Field
The present invention relates to a package and a method for manufacturing the same, and more particularly, to a package for electronic components and a method for manufacturing the same.
Background
Japanese patent application laid-open No. 2000-312060 (patent document 1) discloses a substrate for mounting electronic components such as crystal oscillators. The substrate for mounting electronic components has a lower insulating layer and an upper insulating layer. The lower insulating layer has a mounting portion on the upper surface for mounting the electronic component, and a plurality of metallized conductor layers for connecting the electrodes of the electronic component to the outside are formed from the mounting portion to the lower surface. The upper insulating layer is frame-shaped, is laminated on the lower insulating layer so as to surround the mounting portion, and is covered on the upper surface with a sealing metallization layer for bonding the lid. A notch portion is formed on the outer peripheral surface of the upper insulating layer to vertically penetrate the upper insulating layer. The metallized conductor column electrically connecting the metallized conductor layer and the sealing metallized layer is embedded in the notch portion such that the upper end surface thereof is flush with the upper surface of the upper insulating layer.
According to the above structure, the sealing metallization layer is electrically connected to the metallization conductor layer via the metallization conductor post. Therefore, by connecting the metallized conductor layer to the ground potential, the sealing metallized layer can also be connected to the ground potential.
The above publication discloses the following technique: a metal having excellent wettability with the solder, for example, gold (Au) is coated on the exposed surfaces of the metallized conductor layer, the sealing metallized layer, and the metallized conductor post by plating. By this plating, oxidation corrosion can be prevented. Further, by this plating, the bonding between the sealing metallization layer and the metal cover via the solder can be made strong. The solder is composed of, for example, a gold-tin (Au-Sn) alloy.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2000-312060
Disclosure of Invention
(Problem to be solved by the invention)
According to the technique described in the above publication, a metal layer excellent in wettability with solder is provided so as to cover the exposed surfaces of the metallized conductor layer, the sealing metallized layer, and the metallized conductor column. As a result, the sealing metallization layer and the metal cover can be firmly bonded via the solder as described above. On the other hand, since the solder is covered with the metal layer having excellent wettability with the solder, the solder is liable to flow out in an unnecessary amount from the upper surface of the sealing metallized layer located on the upper surface to the side surface of the metallized conductor column. In particular, the content of expensive materials such as gold in the solder is high in many cases, and in this case, the solder flows out in an unnecessarily large amount, which leads to a significant increase in material cost.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a package and a method for manufacturing the same, which can ensure electrical connection between an upper surface and a lower surface and can prevent solder from unnecessarily flowing out from the upper surface to a side surface in a large amount.
(Means for solving the problems)
One embodiment of the package is a package for electronic components, and the cover is mounted using solder. The package body has a ceramic portion, a metallization portion, and a metal layer. The ceramic portion has an outer edge in a plan view. The ceramic part has: an upper surface, a lower surface opposite to the upper surface, and a side surface disposed at the outer edge in a plan view and connecting the upper surface and the lower surface to each other. The upper surface includes a sealing surface for supporting the cover body, and a chamber for accommodating the electronic component is provided inside the sealing surface. The metallized portion is disposed on the ceramic portion and is composed of a metallized material. The metallization includes: a seal metallization layer disposed on the seal face; a lower surface metallization layer disposed on a lower surface of the ceramic portion; and a side metallization layer disposed on a side of the ceramic portion. The side metallization layer has: an upper portion connected to the seal metallization layer, a lower portion connected to the lower surface metallization layer, and an intermediate portion connecting the upper and lower portions to each other. The metal layer is made of a metal material having higher wettability to the solder than the metallization material. The metal layer covers the seal metallization layer of the metallization, and a middle portion of the side metallization of the metallization is uncovered.
The metal material constituting the metal layer may be any of pure metal and alloy. The metal layer may cover an upper portion of the side metallization layer. The metal layer may have an end portion with a gradually decreasing thickness. The outer edge of the ceramic portion has a first corner, a second corner, and one side connecting the first corner and the second corner to each other in plan view, and the side surface metallization layer may be separated from the first corner and the second corner to be connected to the one side. A surface oxide film composed of an oxide of a metallization material may be provided at a middle portion of the side metallization layer. The surface of the middle portion of the side metallization layer is a fracture surface. The outer edge may have a recess configured with a side metallization layer. The recess may be filled with the side metallization in a height range of the middle portion where the side metallization is arranged. The recess may be filled with the side metallization layer and a filling portion made of ceramic facing the ceramic portion through the side metallization layer in a height range of the intermediate portion where the side metallization layer is disposed.
The method for manufacturing a package according to the above-described embodiment includes: (a) A step of forming a green laminate having a ceramic green part and a metallized green part, the ceramic green part including a portion to be a ceramic part, the metallized green part including a portion to be a metallized part, the ceramic green part and the metallized green part each crossing an imaginary line to be at least a part of an outer edge of the ceramic part, the method of manufacturing the package further comprising: (b) Forming a groove in the green laminate along the virtual line; (c) A step of forming a fired body including a ceramic portion and a metallized portion by firing the green laminate; (d) A step of plating a metallized portion of the fired body to form a metal layer; and (e) forming a surface of a middle portion of the side surface metallization layer of the metallization portion while breaking the ceramic portion by generating a crack in the fired body starting from the trench after the step of plating the metallization portion.
(Effects of the invention)
According to the package of the above-described one embodiment, the first metallization portion includes: a seal metallization layer disposed on the seal face; a lower surface metallization layer disposed on a lower surface of the ceramic portion; and a side metallization layer disposed on a side of the ceramic portion. Thereby, electrical connection between the upper surface provided with the seal metallization layer and the lower surface provided with the lower surface metallization layer can be ensured. Second, the seal metallization layer of the metallization is covered with a metal layer made of a metal material having high wettability to the solder in a molten state, but the middle portion of the side metallization of the metallization is not covered. This can prevent solder from flowing out unnecessarily from the upper surface to the side surface. According to the above, the electrical connection between the upper surface and the lower surface can be ensured, and the solder can be prevented from flowing out unnecessarily from the upper surface to the side surface in a large amount.
The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.
Drawings
Fig. 1 is a plan view schematically showing the structure of an electronic device in embodiment 1.
Fig. 2 is a diagrammatic, partial sectional view along the line II-II of fig. 1.
Fig. 3 is a plan view schematically showing the structure of the package in embodiment 1.
Fig. 4 is a diagrammatic partial cross-sectional view along line IV-IV of fig. 3.
Fig. 5 is a diagrammatic partial cross-sectional view along line V-V of fig. 3.
Fig. 6 is a partial plan view schematically showing a first step of the method for manufacturing a package in embodiment 1.
Fig. 7 is a diagrammatic partial cross-sectional view along line VII-VII of fig. 6.
Fig. 8 is a partial plan view schematically showing a second step of the method for manufacturing a package in embodiment 1.
Fig. 9 is a diagrammatic, partial cross-sectional view along line IX-IX of fig. 8.
Fig. 10 is a partial plan view schematically showing a third step of the method for manufacturing a package in embodiment 1.
Fig. 11 is a diagrammatic partial cross-sectional view along line XI-XI of fig. 10.
Fig. 12 is a partial plan view schematically showing a fourth step of the method for manufacturing a package in embodiment 1.
Fig. 13 is a schematic partial cross-sectional view along line XIII-XIII of fig. 12.
Fig. 14 is a partial plan view schematically showing a fifth step of the method for manufacturing a package in embodiment 1.
Fig. 15 is a schematic partial cross-sectional view along the line XV-XV of fig. 14.
Fig. 16 is a partial plan view schematically showing a sixth step of the method for manufacturing a package in embodiment 1.
Fig. 17 is a schematic partial cross-sectional view along line XVII-XVII of fig. 16.
Fig. 18 is a partial cross-sectional view schematically showing a seventh step of the method for manufacturing a package according to embodiment 1.
Fig. 19 is a partial cross-sectional view schematically showing the structure of the electronic device in the comparative example.
Fig. 20 is a plan view schematically showing the structure of the package in embodiment 2.
Fig. 21 is a schematic partial cross-sectional view along line XXI-XXI of fig. 20.
Fig. 22 is a partial plan view schematically showing a third step of the method for manufacturing a package in embodiment 2.
Fig. 23 is a diagrammatic, partial cross-sectional view along line XXIII-XXIII of fig. 22.
Fig. 24 is a partial plan view schematically showing a fourth step of the method for manufacturing a package according to embodiment 2.
Fig. 25 is a schematic partial cross-sectional view taken along line XXV-XXV of fig. 24.
Fig. 26 is a partial plan view schematically showing a fifth step of the method for manufacturing a package according to embodiment 2.
Fig. 27 is a diagrammatic, partial cross-sectional view along line XXVII-XXVII of fig. 26.
Fig. 28 is a partial plan view schematically showing a sixth step of the method for manufacturing a package according to embodiment 2.
Fig. 29 is a diagrammatic, partial cross-sectional view along line XXIX-XXIX of fig. 28.
Fig. 30 is a partial plan view schematically showing a seventh step of the method for manufacturing a package according to embodiment 2.
Fig. 31 is a diagrammatic partial cross-sectional view along line XXXI-XXXI of fig. 30.
Fig. 32 is a partial plan view schematically showing an eighth step of the method for manufacturing a package according to embodiment 2.
Fig. 33 is a schematic partial cross-sectional view along line XXXIII-XXXIII of fig. 32.
Fig. 34 is a partial cross-sectional view schematically showing a ninth step of the method for manufacturing a package according to embodiment 2.
Fig. 35 is a partial cross-sectional view schematically showing a modification of the sixth step (fig. 29) of the method for manufacturing a package according to embodiment 2.
Fig. 36 is a partial cross-sectional view schematically showing the structure of the package in embodiment 3.
Fig. 37 is a plan view schematically showing the structure of the package in embodiment 4.
Fig. 38 is a partial cross-sectional view schematically showing the structure of the electronic device in embodiment 5 in a view corresponding to fig. 2.
Detailed Description
Hereinafter, embodiments will be described with reference to the drawings.
Embodiment 1 >
Fig. 1 is a plan view schematically showing the structure of an electronic device 900 in embodiment 1. Fig. 2 is a diagrammatic, partial sectional view along the line II-II of fig. 1. The electronic device 900 includes a package 801, an electronic component 910, a solder 930, and a cover 920.
Fig. 3 is a plan view schematically showing the structure of the package 801. Fig. 4 and 5 are schematic partial cross-sectional views along the lines IV-IV and V-V of fig. 3, respectively. The package 801 is a package for the electronic component 910, and in the present embodiment, has the electrode pad 400 bonded to the electronic component 910. As shown in fig. 1 and 2, the cover 920 is mounted on the package 801 by using a solder 930. The cover 920 is preferably made of a metal having a thermal expansion coefficient similar to that of ceramics, specifically, an alloy containing Fe (iron) and Ni (nickel) as main components, for example, an fe—ni—co (cobalt) alloy or an fe—ni alloy. The solder 930 is preferably made of Au, more preferably an Au alloy, typically an au—sn alloy. The material of the solder 930 is not limited to these, and may be, for example, ag (silver) -Cu (copper) alloy, pb (lead) -Sn solder, or Pb-free solder. The cover may be flat.
The package 801 includes a ceramic portion 100, a metallization 200 provided on the ceramic portion 100, and a plating layer 300 (metal layer). The metallization 200 includes a seal metallization layer 210, a lower surface metallization layer 220, and a side metallization layer 230. The plating layer 300 has an upper plating layer 310 and a lower plating layer 320. The upper plating layer 310 and the lower plating layer 320 are separated from each other.
The ceramic portion 100 is made of ceramic, for example, alumina or aluminum nitride. In the case of ceramics made of alumina, 10 to 20wt% of zirconia may be added for the purpose of improving mechanical strength. As shown in fig. 3, the ceramic portion 100 has an outer edge EO in a plan view. Further, as shown in fig. 4, the ceramic portion 100 has an upper surface P1, a lower surface P2 opposite to the upper surface P1, and a side surface P3 connecting the upper surface P1 and the lower surface P2 to each other. The side surface P3 is arranged at the outer edge EO (fig. 3) in a plan view. The outer edge EO has a recess CC. In the present embodiment, the concave portion CC has a substantially semicircular shape. The upper surface P1 includes a sealing surface SS for supporting the cover 920 (fig. 2) via the metallization 200 and the upper plating layer 310. Further, a chamber CV for accommodating the electronic component 910 is provided on the upper surface P1 inside the sealing surface SS. The ceramic portion 100 has a frame portion surrounding the chamber CV in a plan view (fig. 3). The ceramic portion 100 is provided with an internal wiring (not shown) for connecting the inside and the outside of the chamber CV. The internal wiring connects, for example, the electrode pad 400 provided in the chamber CV and an electrode pad (not shown) provided on the lower surface P2 to each other.
The metallization 200 is composed of a metallization material. The main component of the metallization material is preferably a high melting point metal, such as W (tungsten), mo (molybdenum) or a mixture thereof. Alternatively, the main component of the metallization material may be an alloy composed of W and Mo. A seal metallization layer 210 is provided on the sealing surface SS. The lower surface metallization layer 220 is disposed on the lower surface P2 of the ceramic portion 100. The side metallization 230 is provided on the side P3 of the ceramic part 100. Specifically, the side surface metallization layer 230 is disposed in the recess CC of the outer edge EO. In the present embodiment, the concave portion CC is filled with the side metallization layer 230 (fig. 4) in a height range of the intermediate portion 233 where the side metallization layer 230 is disposed. Here, the direction referred to by the above-mentioned "height range" is the thickness direction (longitudinal direction in fig. 4) of the package 801. The side metallization layer 230 has an upper portion 231 connected to the seal metallization layer 210, a lower portion 232 connected to the lower surface metallization layer 220, and a middle portion 233 connecting the upper portion 231 and the lower portion 232 to each other. The surface of the intermediate portion 233 of the side surface metallization layer 230 is not a fired surface (as-fired surface), but a fracture surface (fracture surface) SF (fig. 18) formed by a fracture process described later.
The outer edge EO of the ceramic portion 100 has a rectangular shape having 4 sides and 4 corners in plan view (fig. 3). In addition, the square is one of rectangles. Specifically, the outer edge EO has: a first angle N1 (upper right corner in the drawing), a second angle N2 (lower right corner in the drawing), and one side (right side in the drawing) connecting the first angle N1 and the second angle N2 to each other. The side metallization 230 is separated from the first angle N1 and the second angle N2 to meet one side. In response, the concave portion CC is separated from the first angle N1 and the second angle N2 and is connected to one side. In the present embodiment, the other side surface metallization layer 230 (and the concave portion CC in which the side surface metallization layer is disposed) is in contact with the left side, which is the opposite side to the one side. The number of side metallization layers (and the number of concave portions CC) included in one package is arbitrary.
The upper plating layer 310 of the plating layer 300 covers the seal metallization layer 210 of the metallization 200. On the other hand, the plating layer 300 does not cover the middle portion 233 of the side metallization layer 230 of the metallization 200. In this embodiment, the upper plating layer 310 covers the upper portion 231 of the side metallization layer 230. The interface of the upper portion 231 and the upper plating layer 310 may include an inclined surface with respect to the thickness direction (longitudinal direction in fig. 4). The interface may be constituted by only the inclined surface. Further, the lower plating layer 320 of the plating layer 300 covers the lower surface metallization layer 220 of the metallization 200. Further, the lower plating layer 320 of the plating layer 300 covers the lower portion 232 of the side metallization layer 230 of the metallization 200.
The upper plating layer 310 of the plating layer 300 has an end portion (right end portion in fig. 4) with a gradually decreasing thickness. Similarly, the lower plating layer 320 of the plating layer 300 has an end portion (right end portion in fig. 4) with a gradually decreasing thickness.
The plating layer 300 is made of a metal material having higher wettability to the solder 930 in a molten state than the metallization material. In other words, the wettability of the metallic material of the plating layer 300 is higher than the wettability of the metallized material. The metal material of the plating layer 300 preferably contains Au as a main component, for example, substantially Au.
In order to make the plating layer 300 difficult to separate, a base layer (not shown) made of a conductor material different from the above-described metal material is preferably formed between the plating layer 300 and the metallized portion 200. The base layer may also be a plating layer. The material of the underlayer may be Ni as a main component, for example, ni or a ni—co alloy.
Fig. 5 is a partial cross-sectional view of a portion where the concave portion CC is not provided.
Next, a method of manufacturing a plurality of packages 801 at once will be described with reference to fig. 6 to 18. Fig. 6, 8, 10, 12, 14, and 16 are partial plan views schematically showing the first to sixth steps, respectively. Fig. 7, 9, 11, 13, 15 and 17 are schematic partial sectional views along lines VII-VII (fig. 6), IX-IX (fig. 8), XI-XI (fig. 10), XIII-XIII (fig. 12), XV-XV (fig. 14) and XVII-XVII (fig. 16), respectively. Fig. 18 is a partial cross-sectional view schematically showing the seventh step.
Referring to fig. 6 and 7, a ceramic green part 100G is formed by stacking a plurality of green sheets. The ceramic green part 100G includes a portion that becomes the ceramic part 100 (fig. 4) by a firing step described later. Although not shown, a portion to be an internal wiring (not shown) of the ceramic part 100 may be provided in the ceramic green part 100G.
Referring to fig. 8 and 9, a through hole HL extending in the thickness direction is formed in the ceramic green part 100G. The through hole HL spans an imaginary line LV that is at least a part of the outer edge EO of the ceramic section 100. The through hole HL includes a portion that becomes the concave portion CC (fig. 3). The through-hole HL is formed by machining using a die. In addition, as a modification, the through-hole HL may be formed by machining using a laser.
Referring to fig. 10 and 11, a metallized green part 200G including a seal metallized green layer 210G, a lower surface metallized green layer 220G, and a side metallized green layer 230G is formed on a ceramic green part 100G by printing of a metal paste. The metallized green part 200G includes a portion which becomes the metallized part 200 by a firing step described later. Specifically, the seal metalized green layer 210G, the lower surface metalized green layer 220G, and the side metalized green layer 230G include portions that become the seal metalized layer 210, the lower surface metalized layer 220, and the side metalized layer 230, respectively, by a firing process described later. As a result, a green laminated body 500G having a ceramic green part 100G and a metallized green part 200G is formed, the ceramic green part 100G including a portion to be the ceramic part 100, and the metallized green part 200G including a portion to be the metallized part 200.
The side surface metallized green layers 230G of the ceramic green part 100G and the metallized green part 200G each span an imaginary line LV (fig. 10) that becomes at least a part of the outer edge EO of the ceramic part 100. Specifically, the ceramic green part 100G spans the virtual line LV outside the through hole HL. Further, the side surface metalized green layer 230G of the metalized green portion 200G crosses the virtual line LV in the through hole HL.
Referring to fig. 12 and 13, a trench TR is formed in green stack 500G along virtual line LV (fig. 10). The step of forming the grooves TR is performed by pressing the edge of the green laminate 500G along the virtual line LV. In addition, as a modification, the step of forming the grooves TR may be performed by irradiating the green laminated body 500G with laser light along the virtual line LV.
Next, the green laminate 500G (fig. 12 and 13) is fired. Referring to fig. 14 and 15, a fired body 500 including the ceramic portion 100 and the metallized portion 200 is formed by this firing. Referring to fig. 16 and 17, the metallized portion 200 of the fired body 500 is plated. Thereby, the plating layer 300 is formed.
Referring to fig. 18, after the plating process, cracks are generated in the fired body 500 starting from the grooves TR. Thus, the surface (fracture surface SF) of the intermediate portion 233 of the side surface metallization layer 230 of the metallization 200 is formed while the ceramic portion 100 is broken. Through the above steps, a plurality of packages 801 are obtained.
Fig. 19 is a partial cross-sectional view schematically showing the structure of an electronic device 990 in the comparative example. In this comparative example, unlike the electronic device 900 (fig. 2) in the embodiment, the plating layer 390 is provided on the entire side surface of the side surface metallization layer 230. As a result, when the cover 920 is mounted using the solder 930, the solder 930 is likely to flow out unnecessarily from the upper surface to the side surface in large amounts, as indicated by the arrow in the figure. Further, if a member for preventing the solder 930 from flowing in the middle is added, the structure and the manufacturing method become complicated.
Although not shown, as another comparative example, it is conceivable that a through hole is formed in the frame portion of the ceramic portion 100 so as to be separated from both the outer edge EO and the chamber CV in a plan view similar to fig. 3, and a conductor member for electrically connecting the upper surface P1 and the lower surface P2 is formed in the through hole. In this case, the size of the through hole needs to be sufficiently smaller than the width of the frame portion. Therefore, when the width of the frame portion is small, the processing of forming the through hole is difficult. For example, in the case of machining using a die having minute pins, the minute pins corresponding to the minute through holes are easily broken. When a laser is used instead of a die, productivity is greatly lowered. Further, even if a minute through hole can be formed, the difficulty in the process of filling the conductor member is high.
According to the package 801 of the present embodiment, the first metallization 200 (fig. 4) includes: a seal metallization layer 210 disposed on the seal surface SS; a lower surface metallization layer 220 disposed on the lower surface P2 of the ceramic portion 100; and a side metallization layer 230 disposed on the side P3 of the ceramic portion 100. Thereby, electrical connection between the upper surface P1 provided with the seal metallization layer 210 and the lower surface P2 provided with the lower surface metallization layer 220 can be ensured. Second, the plating layer 300, which is composed of a metallic material having high wettability to the solder 930 (fig. 2) in a molten state, covers the seal metallization layer 210 of the metallization 200, but does not cover the middle portion 233 of the side metallization 230 of the metallization 200. Thus, unlike the comparative example (fig. 19), the solder 930 can be prevented from flowing out unnecessarily from the upper surface to the side surface in large amounts. As described above, the solder 930 can be prevented from flowing out unnecessarily from the upper surface to the side surface in a large amount while ensuring the electrical connection between the upper surface P1 and the lower surface P2.
An upper plating layer 310 (fig. 4) covers an upper portion 231 of the side metallization layer 230. Thus, the extent to which solder 930 (fig. 2) easily flows from the edge of the seal metallization layer 210 is limited to the extent of the upper portion 231 of the side metallization layer 230. Therefore, by sufficiently reducing the size of the upper portion 231 of the side metallization layer 230, the amount of solder 930 flowing out can be suppressed. Further, the solder 930 is slightly spread from the edge of the seal metallization layer 210, so that the solder 930 is more firmly bonded to the plating layer 300. In addition, in the case where the surface of the intermediate portion 233 of the side surface metallization layer 230 is formed by a breaking step (fig. 18) after the firing step and the trench TR (fig. 12) defining the position of the breaking step is formed in advance before the firing step, it is efficient to form the plating layer 300 by a plating step (fig. 17) after the firing step and before the breaking step. In this case, the portion of the plating layer 300 formed within the trench TR corresponds to the portion covering the upper portion 231 of the side metallization layer 230. Therefore, by allowing the plating layer 300 to cover the upper portion 231 of the side metallization layer 230, the plating layer 300 in this embodiment can be efficiently formed.
The upper plating layer 310 has an end portion (right end portion in fig. 4) with a gradually smaller thickness. This can suppress peeling of the plating layer 300 at the end portion. Further, when the plating layer 300 is made of expensive Au, the raw material cost can be reduced. In addition, in the case where the surface of the intermediate portion 233 of the side surface metallization layer 230 is formed by a breaking step (fig. 18) after the firing step and the trench TR (fig. 12) defining the position of the breaking step is formed in advance before the firing step, it is efficient to form the plating layer 300 by a plating step (fig. 17) after the firing step and before the breaking step. In this case, the portion that becomes the end portion of the plating layer 300 of the completed package 801 is located at the bottom of the trench TR at the time point of the plating process. Since plating is difficult at the bottom of the trench TR, the plating layer 300 has an end portion with a gradually decreasing thickness. Therefore, by allowing the plating layer 300 to have an end portion with a gradually smaller thickness, the plating layer 300 in this embodiment can be efficiently formed.
With respect to the outer edge EO (fig. 3) of the ceramic portion 100, the side metallization 230 is spaced from the first corner N1 and the second corner N2 and meets one edge. Peeling of the side surface metallization layer 230 is easily caused at the corner of the outer edge EO, and such peeling can be suppressed by this structure. In particular, compared to the case where the side surface metallization layer 230 is located at the corner of the outer edge EO, damage to the side surface metallization layer 230 due to a breaking step (fig. 18) for forming the outer edge EO of the ceramic portion 100 can be suppressed. However, in a case where this effect is not particularly required, that is, in a case where the adhesion strength between the side surface metallization layer 230 and the ceramic portion 100 is sufficiently high, the arrangement of the side surface metallization layer 230 is not limited to this, and the side surface metallization layer 230 may be arranged at the corner portion.
The surface of the middle portion 233 of the side metallization 230 is a fracture surface SF (fig. 18). This enables the surface to be formed by a breaking step.
The side metallization 230 is disposed in the recess CC of the outer edge EO (fig. 3). Thus, the side surface metallization layer 230 can be prevented from protruding from the outer edge EO of the ceramic portion 100.
The recess CC (fig. 3) is filled with the side metallization 230 in a height range of the intermediate portion 233 (fig. 4) where the side metallization 230 is arranged. Thus, as a member filling the recess CC, a member other than the side surface metallization layer 230 need not be formed. Further, by filling the recess CC, the area where the cover 920 is joined can be prevented from being reduced by the recess CC, which may cause poor sealing. Further, since the rigidity is improved, the frame portion surrounding the cavity CV starting from the concave portion CC can be prevented from being broken. This is effective when the width dimension of the frame portion of the ceramic portion 100 surrounding the cavity CV is only 100 μm or less even in a portion distant from the recess CC. In particular, in a very small package having an outer edge EO as small as 1mm square, it is often required to design the width of the frame to be 100 μm or less. Typically, when the electronic component 910 (fig. 1) is a microminiature crystal blank (provided with electrodes), such a microminiature package is intended.
According to the method of manufacturing the package 801 of the present embodiment, the package 801 can be manufactured by a simple method. Specifically, the fracture surface SF (fig. 18) formed in the fracture step serves as a surface for suppressing the further flow of the solder 930. Therefore, it is not necessary to form a special member for suppressing the flow of the solder 930. The through-hole HL (fig. 8 and 9) is divided into recessed portions CC (fig. 3) for the castellated electrode. Therefore, unlike the present embodiment, the diameter of the through hole HL can be set relatively large as compared with the case where a through hole separated from both the outer edge EO and the cavity CV is formed in the frame portion of the ceramic portion 100 for the through hole electrode. Therefore, the diameter of the pin of the die for forming the through hole HL can also be set large. Therefore, the through-hole HL can be easily formed by machining using a die. This can improve productivity as compared with the case of using laser processing.
According to the method of manufacturing the electronic device 900 of the present embodiment, first, the package 801 is manufactured as described above. Next, the electronic component 910 is bonded to the electrode pad 400 of the package 801. Next, the cover 920 is attached to the package 801 by soldering using the solder 930. Thereby, the electronic apparatus 900 is obtained. The brazing may be performed by a known method, and in this case, as the brazing filler metal 930, an Au alloy, particularly an au—sn alloy, is typically used. However, the brazing method is not limited thereto, and may be performed as follows, for example. First, a solder layer made of ag—cu alloy is formed on one surface of the cover 920. Next, the lid 920 provided with the solder layer is placed on the seal metallization layer 210 so that the solder layer contacts the seal metallization layer 210. Then, the solder is melted by electric heating. Thereby, the electronic apparatus 900 is obtained.
The electronic device 900 (fig. 2) is mounted on an external substrate (not shown) using electrode pads (not shown) provided on the lower surface P2 as described above. In this mounting, the electrode pads are bonded to an external substrate using solder. In this solder bonding, if solder flows out unnecessarily from the lower surface to the side surface, the bonding between the electrode pad and the external substrate is liable to become poor. According to the present embodiment, the plating layer 300 composed of a metallic material having high wettability to the solder in a molten state covers the lower surface metallization layer 220 of the metallization 200, but the middle portion 233 of the side surface metallization 230 of the metallization 200 is not covered. This can prevent solder in a molten state from unnecessarily flowing out from the lower surface to the side surface.
Embodiment 2 >
Fig. 20 is a plan view schematically showing the structure of package 802 in embodiment 2. Fig. 21 is a schematic partial cross-sectional view along line XXI-XXI of fig. 20. In the present embodiment, the recess CC is filled with the side surface metallization layer 230 and the filling portion 150 in a height range of the intermediate portion 233 where the side surface metallization layer 230 is disposed. The filling portion 150 faces the ceramic portion 100 through the side surface metallization layer 230 and is made of ceramic. The main component of the material of the filling portion 150 is preferably the same as the main component of the material of the ceramic portion 100. For example, the filling portion 150 and the ceramic portion 100 may each be composed of aluminum oxide, or the filling portion 150 and the ceramic portion 100 may each be composed of aluminum nitride. The surface of the filling portion 150 is not a fired surface but a fracture surface SG. The cross section shown in fig. 21 is a cross section along line XXI-XXI (fig. 20), and a partial cross section (not shown) along line A-A (fig. 20) is substantially the same as that of fig. 4 (embodiment 1).
Next, a method of manufacturing a plurality of packages 802 at once will be described. The first step and the second step (fig. 6 to 9) in embodiment 1 are also performed in common in this embodiment, and therefore, the description thereof is omitted. Fig. 22, 24, 26, 28, 30 and 32 are partial plan views schematically showing the third to eighth steps, respectively. Further, fig. 23, 25, 27, 29, 31, and 33 are schematic partial sectional views along the lines XXIII-XXIII (fig. 22), XXV-XXV (fig. 24), XXVII-XXVII (fig. 26), XXIX-XXIX (fig. 28), XXXI-XXXI (fig. 30), and XXXIII-XXXIII (fig. 32), respectively. Fig. 34 is a partial cross-sectional view schematically showing the ninth step.
Referring to fig. 22 and 23, by printing of the metal paste, a side surface metalized green layer 230G is formed on the inner surface of the through hole HL of the ceramic green part 100G so as to only partially fill the through hole HL. Referring to fig. 24 and 25, next, the ceramic paste is printed to fill the through-holes HL, and the filled green parts 150G are filled into the through-holes HL through the side surface metalized green layers 230G. Referring to fig. 26 and 27, a seal metallized green layer 210G and a lower surface metallized green layer 220G are formed on the ceramic green part 100G by printing of a metal paste. As described above, through the steps of fig. 22 to 27, the metallized green part 200G including the portion to be the metallized part 200 is formed on the ceramic green part 100G. As a result, a green laminated body 500G having a ceramic green part 100G, a metalized green part 200G, and a filled green part 150G is formed, the ceramic green part 100G including a portion to be the ceramic part 100, the metalized green part 200G including a portion to be the metalized part 200, and the filled green part 150G including a portion to be the filled part 150.
The side metallized green layers 230G and the filled green portions 150G of the ceramic green portion 100G and the metallized green portion 200G, respectively, span the imaginary line LV (fig. 26). Specifically, the ceramic green part 100G spans the virtual line LV outside the through hole HL. The side surface metalized green sheet 230G and the filled green sheet 150G each extend across the virtual line LV in the through hole HL.
Referring to fig. 28 and 29, a trench TR is formed in green stack 500G along virtual line LV (fig. 26). The step of forming the grooves TR is performed by pressing the edge of the green laminate 500G along the virtual line LV. In the case of using a tip to form the trench TR, as shown in fig. 29, the seal-metallized green layer 210G easily extends onto the side of the trench TR. This is because the seal-metallized green layer 210G is wound into the tip when the trench TR is formed. As a result, in the plating step (fig. 32 and 33) described later, the plating layer 300 is easily formed on the surface of the filling portion 150 made of ceramic.
Next, the green laminate 500G (fig. 28 and 29) is fired. Referring to fig. 30 and 31, a fired body 500 including the ceramic portion 100 and the metallized portion 200 is formed by this firing.
Referring to fig. 32 and 33, the metallized portion 200 of the fired body 500 is plated. Thereby, the plating layer 300 is formed.
Referring to fig. 34, after the plating, cracks are generated in the fired body 500 starting from the grooves TR. Thus, the surface (fracture surface SF in fig. 20) of the intermediate portion 233 of the side surface metallization layer 230 of the metallization 200 is formed while the ceramic portion 100 and the filling portion 150 are fractured (snap). With the above, a plurality of packages 802 are obtained.
Since the other components are substantially the same as those of embodiment 1, the same or corresponding components are denoted by the same reference numerals, and the description thereof will not be repeated.
According to the package 802 of the present embodiment, the concave portion CC (fig. 20) is filled with the side surface metallization layer 230 and the filling portion 150 which faces the ceramic portion 100 through the side surface metallization layer 230 and is made of ceramic, in the height range of the intermediate portion 233 (fig. 21) where the side surface metallization layer 230 is disposed. Thereby, the side metallization layer 230 can be protected by the filling portion 150. Further, since the filling portion 150 (fig. 33) made of ceramic is formed in the through hole HL including the portion to be the concave portion CC, the proportion of the material constituting the frame portion made of ceramic increases, and the uniformity improves, so that the crack in the concave portion CC in the breaking step (fig. 34) can be generated more stably.
According to the method of manufacturing the package 802 of the present embodiment, the groove TR is formed using the blade edge (fig. 29). Thus, as previously described, the seal-metallized green layer 210G easily extends onto the sides of the trench TR. As a result of the extension of the seal metallization green layer 210G onto the sides of the trench TR, the seal metallization layer 210 of the package body 802 also extends onto the sides of the trench TR. As a result, as in the case of fig. 4 (embodiment 1), an upper plating layer 310 (fig. 21) having an end portion with a gradually decreasing thickness on the side surface of the trench TR can be obtained.
Modification example of embodiment 2
Fig. 35 is a partial cross-sectional view schematically showing a modification of the process of fig. 29. In the process of fig. 29, the groove TR is formed using a cutting edge, but in this modification, the groove TR is formed by laser processing (that is, irradiation of laser light). In this case, unlike the case of fig. 29, the seal-metallized green layer 210G is difficult to extend onto the side of the trench TR. According to this modification, by using a laser instead of the cutting edge, the minute groove TR can be formed.
Embodiment 3 >
Fig. 36 is a partial cross-sectional view schematically showing the structure of a package 801M in embodiment 3. In the present embodiment, a surface oxide film 233X made of an oxide of a metallization material is provided in the middle portion 233 of the side surface metallization layer 230. The surface oxide film 233X may be a natural oxide film of the intermediate portion 233. Since the other structures are substantially the same as those of embodiment 1 (fig. 4), the same or corresponding elements are denoted by the same reference numerals, and the description thereof will not be repeated.
The present embodiment can also provide substantially the same effects as those of embodiment 1. Further, according to the present embodiment, wettability to the intermediate portion 233 of the solder 930 can be further reduced by the surface oxide film 233X. In particular, when the surface oxide film 233X is a natural oxide film of the intermediate portion 233, the surface oxide film 233X can be easily formed.
Embodiment 4 >
Fig. 37 is a plan view schematically showing the structure of package 802M in embodiment 4. In the present embodiment, a surface oxide film 233X made of an oxide of a metallization material is provided in the middle portion 233 of the side surface metallization layer 230. The surface oxide film 233X may be a natural oxide film of the intermediate portion 233. Since the other structures are substantially the same as those of embodiment 2, the same or corresponding elements are denoted by the same reference numerals, and the description thereof will not be repeated.
The present embodiment can also provide substantially the same effects as those of embodiment 2. Further, according to this embodiment, the same effects as those peculiar to embodiment 3 can be obtained.
Embodiment 5 >
Fig. 38 is a partial cross-sectional view schematically showing the structure of an electronic device 900M in embodiment 5 in a view corresponding to fig. 2 (electronic device 900: embodiment 1). The electronic device 900M includes a metal housing 940 in addition to the components included in the electronic device 900. The shape of the metal frame 940 is substantially the same as the shape of the seal metallization layer 210 in plan view. Accordingly, the metal frame 940 surrounds the chamber CV in a plan view.
The metal frame 940 is preferably made of a metal having a thermal expansion coefficient similar to that of ceramics, and specifically is preferably made of an alloy containing Fe (iron) and Ni (nickel) as main components, for example, an fe—ni—co (cobalt) alloy or an fe—ni alloy.
Next, a method for manufacturing the electronic device 900M will be described. First, the package 801 described in embodiment 1 is prepared. Next, the metal frame 940 is mounted on the seal metallization layer 210 of the package 801 using the solder 930. In other words, the metal frame 940 is soldered to the seal metallization layer 210. The method of brazing may be the same as that of brazing the cover 920 to the seal metallization layer 210 in embodiment 1 or a modification thereof. In particular, in the present embodiment, the material of the solder 930 is preferably ag—cu alloy. Next, a cover 920 is attached to the metal frame 940. The mounting is preferably performed by welding.
In the present embodiment, the cover 920 is mounted on the package 801 using a solder 930 and a metal frame 940 soldered by the solder 930. In other words, the package 801 is a package in which the cover 920 is mounted using the solder 930 and the metal frame 940 soldered to the solder 930. Therefore, in the present embodiment, the sealing surface SS of the package 801 is used to support the cover 920 via the metal frame 940.
As a modification, the package 801 in the electronic device 900M may be replaced with any of the packages of embodiments 1to 4 and modifications thereof other than the package 801.
The above embodiments and modifications can be freely combined with each other. The present invention has been described in detail, but the above description is illustrative in all aspects, and the present invention is not limited thereto. It should be understood that numerous modifications not illustrated can be devised without departing from the scope of the invention.
Symbol description
100: Ceramic part
100G: ceramic green part
150: Filling part
150G: filling the green part
200: Metallization part
200G: metallized green part
210: Seal metallization layer
210G: sealing metallized green layers
220: Lower surface metallization layer
220G: lower surface metallized green layer
230: Side metallization layer
230G: side metallized green layer
231: Upper part
232: Lower part
233: Middle part
233X: surface oxide film
300: Plating layer (Metal layer)
310: Upper plating layer
320: Underlying plating layer
500: Firing body
500G: green laminate
801. 801M, 802M: package body
900. 900M: electronic equipment
910: Electronic component
920: Cover body
940: Metal frame
930: Solder material
CC: concave part
CV: chamber chamber
EO: outer edge
HL: through hole
LV: virtual line
N1, N2: first and second angles
P1: upper surface of
P2: lower surface of
P3: side surface
SF: fracture surface
SG: fracture surface
SS: sealing surface
TR: a groove.
Claims (11)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020217028 | 2020-12-25 | ||
| JP2020-217028 | 2020-12-25 | ||
| JP2021-174728 | 2021-10-26 | ||
| JP2021174728A JP7650780B2 (en) | 2020-12-25 | 2021-10-26 | Package and method for manufacturing the same |
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| CN114696777A CN114696777A (en) | 2022-07-01 |
| CN114696777B true CN114696777B (en) | 2024-11-19 |
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| CN202111360843.9A Active CN114696777B (en) | 2020-12-25 | 2021-11-17 | Package and method of manufacturing the same |
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| CN (1) | CN114696777B (en) |
| TW (2) | TWI806265B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169023A (en) * | 1992-11-27 | 1994-06-14 | Ngk Spark Plug Co Ltd | Semiconductor package ceramic lid |
| CN103718288A (en) * | 2012-03-14 | 2014-04-09 | 日本特殊陶业株式会社 | Ceramic substrate and process for producing same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0764393B1 (en) * | 1995-03-02 | 2001-07-04 | Circuit Components, Incorporated | A low cost, high performance package for microwave circuits in the up to 90 ghz frequency range using bga i/o rf port format and ceramic substrate technology |
| JPWO2004070836A1 (en) * | 2003-02-06 | 2006-06-01 | 株式会社Ｎｅｏｍａｘマテリアル | Hermetic sealing cap and manufacturing method thereof |
| JP2004289470A (en) * | 2003-03-20 | 2004-10-14 | Kyocera Corp | Package for storing piezoelectric vibrator |
| JP5388601B2 (en) * | 2008-10-28 | 2014-01-15 | 京セラ株式会社 | Electronic component storage package |
| JP6314406B2 (en) * | 2013-10-03 | 2018-04-25 | 日立金属株式会社 | HERMETIC SEALING CAP, ELECTRONIC COMPONENT STORAGE PACKAGE, AND HERMETIC SEALING CAP MANUFACTURING METHOD |
-
2021
- 2021-11-17 CN CN202111360843.9A patent/CN114696777B/en active Active
- 2021-12-01 TW TW110144799A patent/TWI806265B/en active
- 2021-12-01 TW TW112117441A patent/TW202335195A/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169023A (en) * | 1992-11-27 | 1994-06-14 | Ngk Spark Plug Co Ltd | Semiconductor package ceramic lid |
| CN103718288A (en) * | 2012-03-14 | 2014-04-09 | 日本特殊陶业株式会社 | Ceramic substrate and process for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI806265B (en) | 2023-06-21 |
| TW202240795A (en) | 2022-10-16 |
| CN114696777A (en) | 2022-07-01 |
| TW202335195A (en) | 2023-09-01 |
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