CN114582860B - A multi-capacitance matching MOM capacitor - Google Patents
A multi-capacitance matching MOM capacitor Download PDFInfo
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Abstract
本发明提供一种多电容匹配式MOM电容器,包括:基底;电容主体,位于基底上方,其包括:多层金属化层和多层介质层,每两层金属化层之间均具有一介质层,每一金属化层具有多个间隔设置且相互平行的第一电极条和第二电极条,且相邻的第一电极条和第二电极条之间填充有隔离电介质;公共T极板,所有的第一电极条均电连接于公共T极板;多个B极板,与公共T极板平行相对设置,并将电容主体分割为多个匹配电容单元,每个匹配电容单元的第二电极条连接于相对应的B极板;冗余极板,设置在边缘的B极板的外侧,与公共T极板平行相对设置;冗余电容,位于基底上,且位于电容主体的外侧,冗余电容的一端连接于公共T极板,另一端连接于冗余极板。
The invention provides a multi-capacitance matching type MOM capacitor, comprising: a substrate; a capacitor body located above the substrate, which comprises: multi-layer metallization layers and multi-layer dielectric layers, each of which has a dielectric layer between the two metallization layers , each metallization layer has a plurality of first electrode strips and second electrode strips arranged at intervals and parallel to each other, and an isolation dielectric is filled between the adjacent first electrode strips and the second electrode strips; the common T plate, All the first electrode strips are electrically connected to the common T plate; a plurality of B plates are arranged in parallel and opposite to the common T plate, and the capacitor body is divided into a plurality of matching capacitor units. The electrode strips are connected to the corresponding B pole plates; the redundant pole plates are arranged on the outer side of the B pole plates at the edge, and are arranged in parallel and opposite to the common T pole plates; the redundant capacitors are located on the base and outside the capacitor body, One end of the redundant capacitor is connected to the common T plate, and the other end is connected to the redundant plate.
Description
技术领域technical field
本发明涉及集成电路技术领域,尤其涉及一种多电容匹配式MOM电容器。The invention relates to the technical field of integrated circuits, in particular to a multi-capacitor matching MOM capacitor.
背景技术Background technique
电容器是集成电路(简称IC)中的重要组成单元,广泛运用于存储器、微波、射频、智能卡和滤波等芯片中。Capacitors are an important component of integrated circuits (IC for short), and are widely used in memory, microwave, radio frequency, smart cards and filtering chips.
随着半导体集成电路制造技术的不断进步,半导体器件的性能也不断提升。集成电路集成度提升过程中对于电容器如何在有限的面积下获得高密度的电容成为一个重要课题。With the continuous advancement of semiconductor integrated circuit manufacturing technology, the performance of semiconductor devices is also continuously improved. In the process of improving the integration of integrated circuits, how to obtain high-density capacitors in a limited area has become an important issue.
现有电容器通常包括:结电容器、栅电容器、金属-金属(Intra-metal)电容器等等。其中,在高电容密度的场合,结电容器、栅电容器的线性度及品质因数都较差,且击穿电压低,适用性不强;而金属-金属(Intra-metal)电容器的线性特征要远好于其他类型的电容器,因而具有更好的精度,能更好的满足高电容密度场合的需要。上述金属-金属(Intra-metal)电容器包括了MIM(metal-insulator-metal,金属-绝缘体-金属)电容器和MOM(metal-oxide-metal,金属-氧化物-金属)电容器。Existing capacitors generally include: junction capacitors, gate capacitors, metal-metal (Intra-metal) capacitors, and the like. Among them, in the case of high capacitance density, the linearity and quality factor of junction capacitors and gate capacitors are poor, and the breakdown voltage is low, and the applicability is not strong; while the linear characteristics of metal-metal (Intra-metal) capacitors are far It is better than other types of capacitors, so it has better accuracy and can better meet the needs of high capacitance density occasions. The above-mentioned metal-metal (Intra-metal) capacitors include MIM (metal-insulator-metal, metal-insulator-metal) capacitors and MOM (metal-oxide-metal, metal-oxide-metal) capacitors.
在很多模拟电路中如高精度ADC(Analog to Digital Converter,模数转换器),电容的匹配直接影响电路的精度。如图1,四个电容,T端连在一起,作为敏感节点,B1~B4可能分别连接到不同的信号,四个电容要求匹配精度越高越好。In many analog circuits such as high-precision ADC (Analog to Digital Converter, analog-to-digital converter), the matching of capacitors directly affects the accuracy of the circuit. As shown in Figure 1, the four capacitors, the T terminals are connected together. As sensitive nodes, B1~B4 may be connected to different signals respectively. The four capacitors require the higher the matching accuracy, the better.
为此,如何提高多个电容的匹配精度并减小多电容匹配式MOM电容器的芯片尺寸,是本领域技术人员亟需解决的问题。Therefore, how to improve the matching accuracy of multiple capacitors and reduce the chip size of the multi-capacitor matching MOM capacitor is an urgent problem for those skilled in the art to solve.
发明内容SUMMARY OF THE INVENTION
本发明揭示了一种多电容匹配式MOM电容器,能够提高多个电容的匹配精度并减小多电容匹配式MOM电容器的芯片尺寸。The invention discloses a multi-capacitor matching MOM capacitor, which can improve the matching accuracy of the multiple capacitors and reduce the chip size of the multi-capacitor matching MOM capacitor.
为解决上述技术问题,本发明提供了一种多电容匹配式MOM电容器,包括:In order to solve the above-mentioned technical problems, the present invention provides a multi-capacitance matching MOM capacitor, comprising:
基底;base;
电容主体,所述电容主体位于所述基底上方,所述电容主体包括:多层金属化层和多层介质层,每两层所述金属化层之间均具有一所述介质层,每一所述金属化层具有多个间隔设置且相互平行的第一电极条和第二电极条,且相邻的所述第一电极条和所述第二电极条之间填充有隔离电介质;A capacitor body, the capacitor body is located above the substrate, and the capacitor body includes: multiple metallization layers and multiple dielectric layers, and there is a dielectric layer between every two metallization layers, and each The metallization layer has a plurality of first electrode strips and second electrode strips arranged at intervals and parallel to each other, and an isolation dielectric is filled between the adjacent first electrode strips and the second electrode strips;
公共T极板,所有的所述第一电极条均电连接于所述公共T极板;Common T plate, all the first electrode strips are electrically connected to the common T plate;
多个B极板,与所述公共T极板平行相对设置,并将所述电容主体分割为多个匹配电容单元,每个所述匹配电容单元的所述第二电极条连接于相对应的所述B极板;A plurality of B plates are arranged in parallel and opposite to the common T plate, and the capacitor body is divided into a plurality of matching capacitor units, and the second electrode strip of each matching capacitor unit is connected to the corresponding the B plate;
冗余极板,设置在边缘的所述B极板的外侧,与所述公共T极板平行相对设置;Redundant pole plates, arranged on the outside of the B pole plates on the edge, and arranged in parallel with the common T pole plates;
冗余电容,所述冗余电容位于所述基底上,且位于所述电容主体的外侧,所述冗余电容的一端连接于所述公共T极板,另一端连接于所述冗余极板。A redundant capacitor, the redundant capacitor is located on the base and outside the capacitor body, one end of the redundant capacitor is connected to the common T plate, and the other end is connected to the redundant plate .
可选方案中,所述公共T极板包括相对的两侧,多个所述B极板均设置在所述公共T极板的同一侧,或者多个所述B极板分设在所述公共T极板的两侧。In an optional solution, the common T-pole plate includes two opposite sides, and a plurality of the B-pole plates are arranged on the same side of the common T-pole plate, or a plurality of the B-pole plates are separately arranged on the common T-pole plate. Both sides of the T plate.
可选方案中,多个所述B极板分设在所述公共T极板的两侧,且位于所述公共T极板其中一侧的所述B极板通过导电结构与位于所述公共T极板另一侧的所述B极板电连接,以使所述B极板的出线端口均位于所述公共T极板的一侧。In an optional solution, a plurality of the B pole plates are arranged on both sides of the common T pole plate, and the B pole plates located on one side of the common T pole plate are connected to the common T pole plate through a conductive structure. The B pole plates on the other side of the pole plates are electrically connected, so that the outlet ports of the B pole plates are all located on one side of the common T pole plate.
可选方案中,所述冗余电容包括多层金属化层和多层介质层,每两层所述金属化层之间均具有一所述介质层,每一所述金属化层具有多个间隔设置且相互平行的第一冗余电极条和第二冗余电极条,且相邻的所述第一冗余电极条和所述第二冗余电极条之间填充有隔离电介质,其中所有的所述第一冗余电极条连接于所述公共T极板,所有的所述第二冗余电极条连接于所述冗余电极。In an optional solution, the redundant capacitor includes multiple metallization layers and multiple dielectric layers, and there is a dielectric layer between every two metallization layers, and each metallization layer has a plurality of dielectric layers. The first redundant electrode strips and the second redundant electrode strips are arranged at intervals and are parallel to each other, and an isolation dielectric is filled between the adjacent first redundant electrode strips and the second redundant electrode strips, wherein all The first redundant electrode strips are connected to the common T plate, and all the second redundant electrode strips are connected to the redundant electrodes.
可选方案中,所述冗余电容的每一所述金属化层与所述电容主体的每一所述金属化层一一对应,所述冗余电容的每一所述介质层与所述电容主体的每一所述介质层一一对应。In an optional solution, each of the metallization layers of the redundant capacitor corresponds to each of the metallization layers of the capacitor body, and each of the dielectric layers of the redundant capacitor corresponds to the Each of the dielectric layers of the capacitor body is in one-to-one correspondence.
可选方案中,所述第一冗余电极条长度和所述第二冗余电极条长度相等,且与所述第一电极条长度、所述第二电极条长度相等。In an optional solution, the length of the first redundant electrode strip is equal to the length of the second redundant electrode strip, and is equal to the length of the first electrode strip and the length of the second electrode strip.
可选方案中,多个所述B极板通过各自的导电结构与外部信号电连接,或者设定数量的所述B极板先导电连通,再与外部信号电连接。In an optional solution, a plurality of the B-pole plates are electrically connected to external signals through their respective conductive structures, or a set number of the B-pole plates are electrically connected first and then electrically connected to the external signals.
可选方案中,多个所述冗余极板通过各自的导电结构连接于参考地,或者设定数量的所述冗余极板先导电连通,再与参考地连接。In an optional solution, a plurality of the redundant pole plates are connected to the reference ground through respective conductive structures, or a set number of the redundant pole plates are firstly connected to the reference ground and then connected to the reference ground.
可选方案中,所述第一电极条与相邻的两条所述第二电极条等距设置。In an optional solution, the first electrode strips are arranged equidistantly from two adjacent second electrode strips.
可选方案中,在竖向方向上,所述第一电极条的上方和下方均设有所述第二电极条。In an optional solution, in the vertical direction, the second electrode strips are provided above and below the first electrode strips.
本发明的有益效果在于:The beneficial effects of the present invention are:
本发明通过共用公共T极板,并连接冗余电容,提高了多个电容的匹配精度,方便模数转换器(ADC)和其他对匹配精度要求高的电路使用。不但提高了有效电容值,还减少了冗余电容的使用,减小了芯片尺寸。By sharing the common T plate and connecting redundant capacitors, the invention improves the matching accuracy of multiple capacitors and facilitates the use of analog-to-digital converters (ADC) and other circuits that require high matching accuracy. It not only increases the effective capacitance value, but also reduces the use of redundant capacitors and reduces the chip size.
附图说明Description of drawings
通过结合附图对本发明示例性实施例进行更详细的描述,本发明的上述以及其它目的、特征和优势将变得更加明显,在本发明示例性实施例中,相同的参考标号通常代表相同部件。The above and other objects, features and advantages of the present invention will become more apparent from the more detailed description of the exemplary embodiments of the present invention in conjunction with the accompanying drawings, in which the same reference numerals generally refer to the same parts .
图1示出了现有技术中一种多电容匹配式MOM电容器示意图。FIG. 1 shows a schematic diagram of a multi-capacitor matched MOM capacitor in the prior art.
图2a示出了根据本发明一实施例的多电容匹配式MOM电容器的结构示意图。FIG. 2a shows a schematic structural diagram of a multi-capacitor matched MOM capacitor according to an embodiment of the present invention.
图2b为图2a的电路图。FIG. 2b is the circuit diagram of FIG. 2a.
图3a为图2a中A处的多电容匹配式MOM电容器的剖面图。FIG. 3a is a cross-sectional view of the multi-capacitor matched MOM capacitor at A in FIG. 2a.
图3b为图2a中B处的多电容匹配式MOM电容器的剖面图。FIG. 3b is a cross-sectional view of the multi-capacitor matched MOM capacitor at B in FIG. 2a.
图4a示出了根据本发明另一实施例的多电容匹配式MOM电容器的结构示意图。FIG. 4a shows a schematic structural diagram of a multi-capacitor matched MOM capacitor according to another embodiment of the present invention.
图4b为图4a的电路图。FIG. 4b is the circuit diagram of FIG. 4a.
图5a示出了根据本发明再一实施例的多电容匹配式MOM电容器的结构示意图。FIG. 5a shows a schematic structural diagram of a multi-capacitor matched MOM capacitor according to still another embodiment of the present invention.
图5b为图5a的电路图。FIG. 5b is the circuit diagram of FIG. 5a.
附图标号:Reference number:
1-公共T极板;11-第一电极条;2-B极板;21-第二电极条;301-第一冗余电极条;302-第二冗余电极条;3-冗余电极板。1-common T plate; 11-first electrode strip; 2-B plate; 21-second electrode strip; 301-first redundant electrode strip; 302-second redundant electrode strip; 3-redundant electrode plate.
具体实施方式Detailed ways
以下结合附图和具体实施例对本发明作进一步详细说明。根据下面的说明和附图,本发明的优点和特征将更清楚,然而,需说明的是,本发明技术方案的构思可按照多种不同的形式实施,并不局限于在此阐述的特定实施例。附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description and accompanying drawings. However, it should be noted that the concept of the technical solution of the present invention can be implemented in various forms, and is not limited to the specific implementation described here. example. The accompanying drawings are all in a very simplified form and in an inaccurate scale, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.
在此使用的术语的目的仅在于描述具体实施例并且不作为本发明的限制。在此使用时,单数形式的“一”、“一个”和“所述/该”也意图包括复数形式,除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”,当在该说明书中使用时,确定所述特征、整数、步骤、操作、元件和/或部件的存在,但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时,术语“和/或”包括相关所列项目的任何及所有组合。The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the/the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that the terms "compose" and/or "include", when used in this specification, identify the presence of stated features, integers, steps, operations, elements and/or components, but do not exclude one or more other The presence or addition of features, integers, steps, operations, elements, parts and/or groups. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
如果本文的方法包括一系列步骤,且本文所呈现的这些步骤的顺序并非必须是可执行这些步骤的唯一顺序,且一些的步骤可被省略和/或一些本文未描述的其他步骤可被添加到该方法。若某附图中的构件与其他附图中的构件相同,虽然在所有附图中都可轻易辨认出这些构件,但为了使附图的说明更为清楚,本说明书不会将所有相同构件的标号标于每一图中。If a method herein includes a series of steps, the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the steps may be omitted and/or some other steps not described herein may be added to this method. If the components in a certain drawing are the same as the components in other drawings, although these components can be easily identified in all the drawings, in order to make the description of the drawings clearer, this specification will not refer to all the same components. Numbers are attached to each figure.
本发明一实施例提供了一种多电容匹配式MOM电容器,该多电容匹配式MOM电容器包括:An embodiment of the present invention provides a multi-capacitor matched MOM capacitor, the multi-capacitor matched MOM capacitor includes:
基底;base;
电容主体,所述电容主体位于所述基底上方,所述电容主体包括:多层金属化层和多层介质层,每两层所述金属化层之间均具有一所述介质层,每一所述金属化层具有多个间隔设置且相互平行的第一电极条和第二电极条,且相邻的所述第一电极条和所述第二电极条之间填充有隔离电介质;A capacitor body, the capacitor body is located above the substrate, and the capacitor body includes: multiple metallization layers and multiple dielectric layers, and there is a dielectric layer between every two metallization layers, and each The metallization layer has a plurality of first electrode strips and second electrode strips arranged at intervals and parallel to each other, and an isolation dielectric is filled between the adjacent first electrode strips and the second electrode strips;
公共T极板,所有的所述第一电极条均电连接于所述公共T极板;多个B极板,与所述公共T极板平行相对设置,并将所述电容主体分割为多个匹配电容单元,每个所述匹配电容单元的所述第二电极条连接于相对应的所述B极板;B极板用于连接电信号。A common T plate, all the first electrode strips are electrically connected to the common T plate; a plurality of B plates are arranged in parallel and opposite to the common T plate, and the capacitor body is divided into multiple There are matching capacitor units, and the second electrode strip of each matching capacitor unit is connected to the corresponding B plate; the B plate is used to connect electrical signals.
冗余极板,设置在边缘的所述B极板的外侧,与所述公共T极板平行相对设置;冗余极板用于连接参考地。The redundant pole plate is arranged on the outer side of the B pole plate at the edge, and is arranged in parallel and opposite to the common T pole plate; the redundant pole plate is used to connect the reference ground.
冗余电容,所述冗余电容位于所述基底上,且位于所述电容主体的外侧,所述冗余电容的一端连接于所述公共T极板,另一端连接于所述冗余极板。A redundant capacitor, the redundant capacitor is located on the base and outside the capacitor body, one end of the redundant capacitor is connected to the common T plate, and the other end is connected to the redundant plate .
公共T极板包括相对的两侧,多个所述B极板可以均设置在所述公共T极板的同一侧,多个B极板也可以分设在所述公共T极板的两侧。The common T-pole plate includes two opposite sides, and a plurality of the B-pole plates may all be arranged on the same side of the common T-pole plate, or a plurality of B-pole plates may be arranged on both sides of the common T-pole plate.
本实施例中,所述冗余电容包括多层金属化层和多层介质层,每两层所述金属化层之间均具有一所述介质层,每一所述金属化层具有多个间隔设置且相互平行的第一冗余电极条和第二冗余电极条,且相邻的所述第一冗余电极条和所述第二冗余电极条之间填充有隔离电介质,其中所有的所述第一冗余电极条连接于所述公共T极板,所有的所述第二冗余电极条连接于所述冗余极板。可选方案中所述冗余电容的每一所述金属化层与所述电容主体的每一所述金属化层一一对应,所述冗余电容的每一所述介质层与所述电容主体的每一所述介质层一一对应。在制作时,冗余电容的冗余电极条和电容主体的电极条在同步工艺中制作。In this embodiment, the redundant capacitor includes multiple metallization layers and multiple dielectric layers, there is a dielectric layer between every two metallization layers, and each metallization layer has multiple The first redundant electrode strips and the second redundant electrode strips are arranged at intervals and are parallel to each other, and an isolation dielectric is filled between the adjacent first redundant electrode strips and the second redundant electrode strips, wherein all The first redundant electrode strips are connected to the common T-pole plate, and all the second redundant electrode strips are connected to the redundant pole plate. In an alternative solution, each metallization layer of the redundant capacitor corresponds to each metallization layer of the capacitor body one-to-one, and each of the dielectric layers of the redundant capacitor corresponds to the capacitor Each of the dielectric layers of the main body corresponds to each other. During fabrication, the redundant electrode strips of the redundant capacitor and the electrode strips of the capacitor body are fabricated in a synchronous process.
所述第一冗余电极条和所述第二冗余电极条的材料为金属。位于同一金属化层的第一冗余电极条和第二冗余电极条的数量可以是一个也可以是多个,当是多个时,第一冗余电极条和所述第二冗余电极条间隔平行设置。The material of the first redundant electrode strip and the second redundant electrode strip is metal. The number of the first redundant electrode strip and the second redundant electrode strip located on the same metallization layer can be one or more, and when there are multiple, the first redundant electrode strip and the second redundant electrode The bars are spaced in parallel.
在不同的实施例中,多个所述B极板通过各自的导电结构与外部信号电连接,或者设定数量的所述B极板先导电连通,再与外部信号电连接。本实施例中,不同的B极板连接不同的信号,在其他实施例中,如有八个独立的匹配电容单元,且八个匹配电容单元的比值为1:1:1:1:1:1:1:1,当需要组合成四个电容器使用时,且四个电容器的比值为1:1:2:4时,把其中两个B极板器通过导电结构电连接,其中四个B极板通过导电结构电连接。通过这种连接方式可组合电容,调整电容间的比例。In different embodiments, a plurality of the B-pole plates are electrically connected to external signals through respective conductive structures, or a set number of the B-pole plates are electrically connected first, and then electrically connected to the external signals. In this embodiment, different B plates are connected to different signals. In other embodiments, there are eight independent matching capacitor units, and the ratio of the eight matching capacitor units is 1:1:1:1:1: 1:1:1, when it needs to be combined into four capacitors, and the ratio of the four capacitors is 1:1:2:4, connect two of the B-polarizers through a conductive structure, and four of the B-polarizers are electrically connected. The plates are electrically connected by conductive structures. Capacitors can be combined through this connection method to adjust the ratio between capacitors.
在一个实例中,多个所述冗余极板通过各自的导电结构连接于参考地,在另一个实例中,设定数量的所述冗余极板先导电连通,再与参考地连接。In one example, a plurality of the redundant pole plates are connected to the reference ground through respective conductive structures. In another example, a set number of the redundant pole plates are first electrically connected, and then connected to the reference ground.
本实施例中,在竖向方向上,所述第一电极条的上方和下方均为所述第二电极条。即,所述第一电极条的上下左右均为第二电极条,所述第二电极条的上下左右均为第一电极条。In this embodiment, in the vertical direction, the upper and lower sides of the first electrode strips are both the second electrode strips. That is, the top, bottom, left, and right of the first electrode strip are all second electrode strips, and the top, bottom, left, and right of the second electrode strip are both first electrode strips.
本实施例中,所述第一电极条和所述第二电极条为长条形。优选方案中,所述第一电极条和所述第二电极条长度相等。所述第一冗余电极条长度和所述第二冗余电极条长度相等,且与所述第一电极条长度和所述第二电极条长度相等。所述第一电极条与相邻的两条所述第二电极条等距设置。In this embodiment, the first electrode strips and the second electrode strips are elongated. In a preferred solution, the lengths of the first electrode strip and the second electrode strip are equal. The lengths of the first redundant electrode strips are equal to the lengths of the second redundant electrode strips, and are equal to the lengths of the first electrode strips and the second electrode strips. The first electrode strips are equidistant from two adjacent second electrode strips.
本发明通过共用公共T极板,并连接冗余电容,提高了多个电容的匹配精度,方便模数转换器(ADC)和其他对匹配精度要求高的电路使用。不但提高了有效电容值,还减少了冗余电容的使用,减小了芯片尺寸。By sharing the common T plate and connecting redundant capacitors, the invention improves the matching accuracy of multiple capacitors and facilitates the use of analog-to-digital converters (ADC) and other circuits that require high matching accuracy. It not only increases the effective capacitance value, but also reduces the use of redundant capacitors and reduces the chip size.
多个电容共用公共T极板,B极板连接不同的信号,公共T极板到B极板的电容为有效电容,包含公共T极板和B极板之间的寄生电容。公共T极板为敏感节点,B极板相对不敏感。排除加工误差,本发明可以保证多个电容的有效电容值是完全相等的。Multiple capacitors share a common T plate, and the B plate is connected to different signals. The capacitance from the common T plate to the B plate is an effective capacitance, including the parasitic capacitance between the common T plate and the B plate. The common T plate is a sensitive node, and the B plate is relatively insensitive. Excluding processing errors, the present invention can ensure that the effective capacitance values of multiple capacitors are completely equal.
实施例1Example 1
本实施例提供了一种多电容匹配式MOM电容器的具体结构,请参考图2a和图2b,图2a为俯视图,为其中一层金属化层的内部结构。This embodiment provides a specific structure of a multi-capacitance matching MOM capacitor. Please refer to FIGS. 2a and 2b. FIG. 2a is a top view, which is an internal structure of one of the metallization layers.
公共T极板1,沿图的左右方向延伸,多条第一电极条11,本实施例中,第一电极条11为十个,所述第一电极条11包括相对的第一端和第二端,多条所述第一电极条11条沿所述公共T极板1的延伸方向(图中左右方向)平行设置,且每个所述第一电极条11的所述第一端(图中的上端)连接在所述公共T极板1上;至少两个B极板2(图中示出四个B极板2),所述B极板2与所述第一电极条11的所述第二端相对设置(第一电极条11和B极板不相接);多条第二电极条21,所述第二电极条21包括相对的第一端和第二端,所述第二电极条21沿所述B极板2的延伸方向(图中左右方向)平行设置,每个所述第二电极条21的所述第一端(图中的下端)连接在所述B极板2上,并使所述第一电极条11和所述第二电极条21相互平行且间隔排列;介电层(图中未示出),所述介电层填充在所述第一电极条和所述第二电极条之间;冗余极板3,设置在边缘的所述B极板2的外侧,与所述公共T极板1平行相对设置;冗余电容,所述冗余电容位于所述基底上,且位于所述电容主体的外侧,所述冗余电容的一端连接于所述公共T极板1,另一端连接于所述冗余极板3。The
本实施例中,冗余电容包括多层金属化层和多层介质层,每两层金属化层之间均具有一介质层,每一金属化层具有多个间隔设置且相互平行的第一冗余电极条301和第二冗余电极条302,且相邻的第一冗余电极条301和第二冗余电极条302之间填充有隔离电介质,其中所有的第一冗余电极条301连接于公共T极板1,所有的第二冗余电极条302连接于冗余极板3。In this embodiment, the redundant capacitor includes multiple metallization layers and multiple dielectric layers, and there is a dielectric layer between every two metallization layers, and each metallization layer has a plurality of first spaced and parallel to each other. The redundant electrode strips 301 and the second redundant electrode strips 302, and the adjacent first redundant electrode strips 301 and the second redundant electrode strips 302 are filled with an isolation dielectric, wherein all the first redundant electrode strips 301 Connected to the common
本实施例中,所述公共T极板包括相对的两侧,四个所述B极板均设置在所述公共T极板1的同一侧(下侧)。本实施例中,第一电极条11与相邻的两条所述第二电极条21等距设置,S1=S2,每个B极板连接有两个第二电极条(以其中一层金属化层为例)。所述第一电极条和所述第二电极条为长条形,且第一电极条11和第二电极条21长度相等。In this embodiment, the common T-pole plate includes two opposite sides, and the four B-pole plates are all disposed on the same side (lower side) of the common T-
参考图3a和图3b,本实施例中,所述多电容匹配式MOM电容器形成在半导体衬底上,多电容匹配式MOM电容器通过半导体工艺制造而成。第一电极条11和第二电极条21嵌入在介质层中,相邻金属化层的所述第一电极条11通过贯穿所述介电层的插塞电连接;相邻金属化层的所述第二电极条21通过贯穿所述介电层的插塞电连接。图中示出了4层金属层(M1~M4),V1、V2、V3为穿过介质层的插塞。Referring to FIG. 3 a and FIG. 3 b , in this embodiment, the multi-capacitor matching MOM capacitor is formed on a semiconductor substrate, and the multi-capacitor matching MOM capacitor is manufactured by a semiconductor process. The first electrode strips 11 and the second electrode strips 21 are embedded in the dielectric layer, and the first electrode strips 11 of the adjacent metallization layers are electrically connected by plugs penetrating the dielectric layers; all the adjacent metallization layers are electrically connected. The second electrode strips 21 are electrically connected by plugs penetrating the dielectric layer. The figure shows four metal layers (M1~M4), and V1, V2, and V3 are plugs passing through the dielectric layer.
实施例2Example 2
本实施例提供了一种多电容匹配式MOM电容器的具体结构,实施例2与实施例1的区别在于,B极板2的分布方式不同。This embodiment provides a specific structure of a multi-capacitance matching MOM capacitor. The difference between
参考图4a和图4b,该多电容匹配式MOM电容器包括八个B极板2,分别对称设置在公共T极板1的两侧,每侧设置四个B极板2。包括四个冗余电容,设置在最外侧,冗余电容的结构和实施例1相同。本实施例把公共T极板1放在中间,将公共T极板1包在内部,可以比较好的隔离敏感节点。4a and 4b, the multi-capacitor matching MOM capacitor includes eight B-
实施例3Example 3
本实施例提供了一种多电容匹配式MOM电容器的具体结构,实施例3与实施例2的区别在于,B极板与外部信号的电连接方式不同。This embodiment provides a specific structure of a multi-capacitance matching MOM capacitor. The difference between
参考图5a和图5b,多个所述B极板分设在所述公共T极板的两侧,且位于所述公共T极板其中一侧的所述B极板通过导电结构与位于所述公共T极板另一侧的所述B极板电连接,以使所述B极板的出线端口均位于所述公共T极板的一侧。多个所述冗余极板分设在所述公共T极板的两侧且位于所述公共T极板其中一侧的所述冗余极板通过导电结构与位于所述公共T极板另一侧的所述冗余极板电连接,以使所述冗余极板的出线端口均位于所述公共T极板的一侧。5a and 5b, a plurality of the B pole plates are arranged on both sides of the common T pole plate, and the B pole plates located on one side of the common T pole plate are connected with each other through a conductive structure. The B pole plates on the other side of the common T pole plate are electrically connected, so that the outlet ports of the B pole plates are all located on one side of the common T pole plate. A plurality of the redundant pole plates are arranged on both sides of the common T pole plate and the redundant pole plates located on one side of the common T pole plate are connected to the other side of the common T pole plate through a conductive structure. The redundant pole plates on the side are electrically connected, so that the outlet ports of the redundant pole plates are all located on one side of the common T pole plate.
本实施例中,两个匹配电容单元通过导电结构将各自的B极板导电互连,以使两个匹配电容单元通过一个B极板供电。两个冗余电容通过导电结构将各自的冗余极板导电互连,以使两个冗余电容通过一个冗余极板连接参考地。In this embodiment, the two matching capacitor units are conductively interconnected with their respective B electrode plates through a conductive structure, so that the two matching capacitor units are powered through one B electrode plate. The two redundant capacitors are conductively interconnected with their respective redundant pole plates through a conductive structure, so that the two redundant capacitors are connected to the reference ground through one redundant pole plate.
作为一种可选方式,本实施例的导电结构的设置方式为去除掉原T极板的一层金属连接(如图5a中斜线阴影下方区域),参照图3a,比如T极板的金属层M2或者M4,图5a中下面的匹配电容单元的B极板的连线通过T极板去除金属层所在的区域穿过T极板,与图5a中上方的B极板电连接。这样出线端口只需要在一侧就可以了,图中在上侧出线。As an optional method, the conductive structure of this embodiment is set by removing a layer of metal connection of the original T plate (the area under the slanted shadow in Fig. 5a ). Referring to Fig. 3a, for example, the metal connection of the T plate is Layer M2 or M4, the connection line of the B plate of the lower matching capacitor unit in Figure 5a passes through the T plate through the region where the metal layer is removed from the T plate, and is electrically connected to the upper B plate in Figure 5a. In this way, the outlet port only needs to be on one side, and the cable outlet is on the upper side in the figure.
需要说明的是,本说明书中的各个实施例均采用相关的方式描述,各个实施例之间相同相似的部分互相参见即可,每个实施例重点说明的都是与其他实施例的不同之处。It should be noted that each embodiment in this specification is described in a related manner, and the same and similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. .
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosure all belong to the protection scope of the claims.
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