CN114488398A - Redundant silicon-based photoelectric integrated chip - Google Patents
Redundant silicon-based photoelectric integrated chip Download PDFInfo
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- CN114488398A CN114488398A CN202210096969.8A CN202210096969A CN114488398A CN 114488398 A CN114488398 A CN 114488398A CN 202210096969 A CN202210096969 A CN 202210096969A CN 114488398 A CN114488398 A CN 114488398A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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Abstract
The invention provides a redundant silicon-based photoelectric integrated chip, wherein each channel of the silicon-based photoelectric integrated chip is internally provided with an optical power monitoring module, and the optical power monitoring module consists of at least two parallel monitoring detector units. By adopting a redundant MPD mode, namely designing at least one parallel MPD as redundant equipment, the yield of the photoelectric integrated chip is greatly improved, the additional influence caused by the mode is small, an additional control circuit or other real-time monitoring systems are not needed, and the photoelectric integrated chip has the advantages of simple structure, small size and low cost.
Description
Technical Field
The invention belongs to the technical field of optical communication and photoelectric integrated chips, and particularly relates to a redundant silicon-based photoelectric integrated chip.
Background
Optical communication has become a key communication technology in the communication field because of its advantages of high bandwidth, large capacity, small volume, light weight, good anti-interference performance, long transmission distance, etc. In recent years, with the explosive growth of traffic, internet companies are continuously building new data centers to meet the increasing traffic demand, wherein due to the advantages of material characteristics and compatibility with CMOS processes, the silicon optical integration technology can better meet the communication requirements of low cost, high integration, low power consumption and large capacity, and plays an important role in the aspects of backbone networks, data centers, 5G construction and the like.
The silicon optical integration technology can integrate a plurality of optical signal channels or multi-channel combination by a single chip to support a more complex modulation format by virtue of the scale advantage of a large-scale integrated circuit, the single chip can be provided with both a transmitting end and a receiving end, and the size advantage is more prominent due to high integration level. In addition, the silicon-based optoelectronic integrated chip has the advantages of high cost due to the high integration of a high-speed modulator, a high-speed detector, a thermal phase shifter, a variable optical attenuator and various passive optical waveguide devices.
However, as the integration degree of a single chip increases, the chip often contains dozens of unit devices or components, and the yield of the unit devices has a great influence on the yield of the integrated chip. Taking an eight-channel silicon optical integrated MZI modulator chip as an example, 16 monitoring detector units (MPDs) are required in a single chip to monitor the optical signal input and output powers of 8 channel modulators, and the yield of the chip is reduced to 44% when the yield of each MPD alone is 95%. Considering the components such as the electro-optical modulator, the thermal phase shifter, and the optical coupler, the yield of the integrated chip is lower, and the cost of the optoelectronic integrated chip is greatly challenged.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a redundant silicon-based optoelectronic integrated chip. The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview and is intended to neither identify key/critical elements nor delineate the scope of such embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is presented later.
The invention adopts the following technical scheme:
in some optional embodiments, a redundant silicon-based optoelectronic integrated chip is provided, where an optical power monitoring module is disposed in each channel of the silicon-based optoelectronic integrated chip, and the optical power monitoring module is composed of at least two parallel monitoring detector units.
Further, the optical power monitoring module uses one of the monitoring detector units as a main device to monitor an optical signal in a channel, and the other monitoring detector units as redundant devices.
Furthermore, a modulator is arranged in each channel of the silicon-based photoelectric integrated chip, and the input side and the output side of the modulator are both provided with the optical power monitoring module.
Further, the input optical signal energy and the output optical signal energy of the modulator in each channel are monitored by the monitoring detector unit serving as a master device.
Further, the monitor detector unit takes a part of the light split in the main optical path as its input signal light.
Further, the monitor detector unit located at the output side of the modulator uses a bidirectional coupler to split a part of light in the main optical path as its input signal light.
Further, the redundant silicon-based optoelectronic integrated chip further includes: and the first optical beam splitter divides a plurality of beams of light into a main optical path to be used as input signal light of each monitoring detector unit in the optical power monitoring module.
Furthermore, the monitoring detector unit serving as the redundant equipment makes the monitoring detector unit in an open circuit state by using a breakdown mode, or isolates the monitoring detector unit by using a mode of not routing, or isolates the monitoring detector unit by using a mode of not leading out an electrode.
Further, the redundant silicon-based optoelectronic integrated chip further includes: the first couplers couple external signal light into the chip, and the second optical beam splitter equally divides the signal light output by the first couplers into two parts and distributes the two parts to the modulators in each channel.
Further, the redundant silicon-based optoelectronic integrated chip further includes: and the second couplers are used for transmitting the signal light output by the modulator to the outside of the chip.
The invention has the following beneficial effects: by adopting a redundant MPD mode, namely designing at least one parallel MPD as redundant equipment, the yield of the photoelectric integrated chip is greatly improved, the additional influence caused by the mode is small, an additional control circuit or other real-time monitoring systems are not needed, and the photoelectric integrated chip has the advantages of simple structure, small size and low cost.
Drawings
Fig. 1 is a schematic structural diagram of a redundant silicon-based optoelectronic integrated chip according to the present invention, in which a directional coupler is used to split a light beam of a main optical path;
fig. 2 is a schematic structural diagram of a redundant silicon-based optoelectronic integrated chip according to the present invention, in which an optical splitter is used to split a light beam of a main optical path;
fig. 3 is a schematic structural diagram of a redundant silicon-based optoelectronic integrated chip according to the present invention, in which a bidirectional coupler is used to split a light beam of a main optical path;
fig. 4 is a schematic structural diagram of a redundant silicon-based optoelectronic integrated chip according to the present invention, which employs a double-row or multi-row electrode lead-out mode.
Detailed Description
The following description and the drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others.
In view of the significant influence of the MPD yield on the yield of a high-integration silicon-based optoelectronic integrated chip, in some illustrative embodiments, the present invention provides a redundant silicon-based optoelectronic integrated chip, in particular, a multi-channel silicon-based optoelectronic integrated chip, where each channel of the silicon-based optoelectronic integrated chip is provided with an optical power monitoring module, and the optical power monitoring module is composed of at least two parallel MPDs.
Parallel means that all MPDs run independently and do not affect each other, and functions and monitoring modes finished when the MPDs are put into use are consistent.
The optical power monitoring module uses one of the MPDs as a master device to monitor an optical signal in a channel, and the other MPDs as redundant devices. According to the invention, a redundant MPD mode is adopted, a parallel MPD is designed at each position needing to be arranged with MPD in a chip, and more than 2 parallel MPDs may be needed in some use scenes. Therefore, all MPDs in corresponding positions only need to have one MPD which can work normally to ensure the normal work of the silicon-based optoelectronic integrated chip. The yield of each MPD is 95%, for a silicon-based photoelectric integrated chip comprising 16 MPDs, the limitation of the MPDs on the yield of the whole chip can be increased from 44% to over 96% by only adding one redundant MPD, and if multiple MPDs are used, the yield of the chip can be further increased.
As shown in fig. 1-4, the present invention is further illustrated by taking a single-redundancy MPD and an eight-channel silicon-based optoelectronic integrated chip as an example.
The silicon-based photoelectric integrated chip is characterized in that modulators are further arranged in each channel, optical power monitoring modules are arranged on the input side and the output side of each modulator, namely 8 paths of modulators are arranged on the chip, and each path of modulator is provided with 2 optical power monitoring modules for respectively monitoring the input optical power and the output optical power of the modulator. Each optical power monitoring module is designed into two parallel MPDs, namely MPDA and MPDB, wherein the MPDA and the MPDB work independently and normally, and the optical power monitoring module can work normally as long as one of the MPDA and the MPDB can work normally, so that the yield of the silicon-based photoelectric integrated chip can be greatly improved.
The input optical signal energy and the output optical signal energy of the modulators in each channel are monitored by the MPD serving as a main device, namely one of the MPDA and the MPDB serves as the main device for real-time monitoring, and the other one serves as a redundant device and is not used.
The invention also includes: a plurality of first couplers, a second optical splitter, and a second coupler. Correspondingly, the number of the first couplers is 4 corresponding to 8 paths of modulators, one first coupler corresponds to two paths of modulators, and a second optical beam splitter, specifically a 3dB optical beam splitter, is connected behind the first coupler of each path. The first coupler couples external signal light into the chip, and the second optical splitter equally divides the signal light output by the first coupler into two parts and distributes the two parts to the modulators in the corresponding two channels. The number of the second couplers is 8, and the second couplers respectively correspond to the 8-way modulators, and each second coupler transmits the signal light output by the corresponding modulator to the outside of the chip. Each of the MPDA and MPDB is provided in the main optical path 1 in which the modulator is connected to the second optical splitter, and in the main optical path 1 in which the modulator is connected to the second coupler.
There are three spectroscopic formats of MPD, exemplified below:
the first light splitting form: as shown in fig. 1, the MPDA and MPDB split a part of light in the main optical path 1 as their input signal light, and the non-uniform beam splitter for implementing this function is generally a directional coupler, and may have other structures with this function. The invention adopts a double MPD mode, namely an MPDA + MPDB mode, each MPD position needing to be arranged is provided with a backup MPD, and the normal work of the chip can be ensured as long as one MPDA and one MPDB can work normally.
Second spectroscopic format: as shown in fig. 2, the present invention further includes: the first optical beam splitter divides a plurality of beams of light into the main optical path 1 to serve as input signal light of each MPD in the optical power monitoring module, namely, the light splitting forms of the MPDA and the MPDB can also be the light splitting forms of 3dB on monitoring optical signals divided from the main optical path 1, and then the monitoring optical signals enter the MPDA and the MPDB respectively. The first optical splitter may be a directional coupler, a Y-branch waveguide, a multimode interferometer or other devices with optical path splitting function.
The third form of spectroscopy: as shown in fig. 3, since it is desirable that the MPD monitoring the output light of the modulator can support backward light monitoring in some usage scenarios, the MPD located at the output side of the modulator in the present invention uses a bidirectional coupler to drop a part of light in the main optical path 1 as its input signal light, and the dropped light is all coupled into the MPD.
When the silicon-based optoelectronic integrated chip works, for each group of MPDs, it is usually only necessary to use the MPD as a main device, and for another plurality of redundant MPDs, the MPDs may be isolated outside a normal working loop in various ways, for example, the MPD as a redundant device makes itself in an open circuit state by using a breakdown method, or isolates the MPD by using a method without routing, or isolates the MPD by using a method without leading out an electrode. The mode of multi-row electrode extraction is shown in fig. 4, the electrode 2 of MPD as redundant equipment is extracted, whether MPDA or MPDB is used for each path is determined during testing, and a corresponding pad is selected for gold wire lead in packaging.
Aiming at the condition that a plurality of MPDs exist in the silicon-based photoelectric integrated chip, one or more backup MPDs are arranged at each position where the MPDs need to be arranged in a redundancy MPD mode, and in the MPDs, the normal operation of the chip can be ensured as long as one MPD can normally operate. The method is suitable for all integrated chips needing multiple MPDs, and the yield of the integrated chips is reduced to 44% due to the fact that the yield of each MPD is 95%. If the modulator, the thermal phase shifter, the optical coupler, and other components are considered, the yield of the integrated chip is lower, and the yield of the optoelectronic integrated chip is greatly affected. The invention adopts a mode of backing up MPD, and the limitation of MPD on the yield of the chip is improved from the yield of 44% to the yield of more than 96%.
Those of skill would further appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.
Claims (10)
1. A redundant silicon-based photoelectric integrated chip is characterized in that each channel of the silicon-based photoelectric integrated chip is internally provided with a light power monitoring module, and the light power monitoring module is composed of at least two parallel monitoring detector units.
2. A redundant silicon-based optoelectronic integrated chip according to claim 1, wherein the optical power monitoring module uses one of the monitoring detector units as a master device to monitor the optical signal in the channel, and the other monitoring detector units as redundant devices.
3. A redundant silicon-based optoelectronic integrated chip according to claim 2, wherein a modulator is further disposed in each channel of the silicon-based optoelectronic integrated chip, and the optical power monitoring module is disposed on both the input side and the output side of the modulator.
4. A redundant silicon-based photonic integrated chip according to claim 3, wherein the input optical signal energy and the output optical signal energy of the modulator in each channel are monitored by the monitoring detector unit as a master device.
5. A redundant silicon-based optoelectronic integrated chip according to claim 4, wherein the monitor detector unit is configured to split a portion of the light in the main optical path as its input signal light.
6. A redundant silicon-based optoelectronic integrated chip according to claim 5, wherein the monitor detector unit at the output side of the modulator uses a bidirectional coupler to split a part of the light in the main optical path as its input signal light.
7. The redundant silicon-based optoelectronic integrated chip of claim 4, further comprising: and the first optical beam splitter divides a plurality of beams of light into a main optical path to be used as input signal light of each monitoring detector unit in the optical power monitoring module.
8. A redundant silicon-based optoelectronic integrated chip according to any one of claims 3 to 7, wherein the monitoring detector unit as a redundant device breaks itself in an open circuit manner, or isolates itself without wire bonding, or isolates itself without leading out electrodes.
9. The redundant silicon-based optoelectronic integrated chip of claim 8, further comprising: the first couplers couple external signal light into the chip, and the second optical beam splitter equally divides the signal light output by the first couplers into two parts and distributes the two parts to the modulators in each channel.
10. The redundant silicon-based optoelectronic integrated chip of claim 9, further comprising: and the second couplers are used for transmitting the signal light output by the modulator to the outside of the chip.
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Cited By (1)
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